WO2008056761A1 - Procédé de fabrication d'un monocristal de carbure de silicium - Google Patents

Procédé de fabrication d'un monocristal de carbure de silicium Download PDF

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Publication number
WO2008056761A1
WO2008056761A1 PCT/JP2007/071771 JP2007071771W WO2008056761A1 WO 2008056761 A1 WO2008056761 A1 WO 2008056761A1 JP 2007071771 W JP2007071771 W JP 2007071771W WO 2008056761 A1 WO2008056761 A1 WO 2008056761A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
crucible
raw material
carbide single
Prior art date
Application number
PCT/JP2007/071771
Other languages
English (en)
Japanese (ja)
Inventor
Sho Kumagai
Daisuke Kondo
Hidetoshi Ishihara
Original Assignee
Bridgestone Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgestone Corporation filed Critical Bridgestone Corporation
Publication of WO2008056761A1 publication Critical patent/WO2008056761A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Definitions

  • the present invention relates to a method for manufacturing a silicon carbide (SiC) single crystal suitable for use as a substrate for a high-frequency semiconductor device.
  • SiC silicon carbide
  • a substrate of a high-frequency semiconductor device is required to have semi-insulating (high resistance) characteristics with a resistivity of about 10 5 to 10 12 [ ⁇ 'cm].
  • silicon carbide single crystals which are expected to be used as substrates for high-frequency semiconductor devices, have been devised to reduce the concentration of impurities such as nitrogen contained in the crystals! (See Patent Document 1)
  • the present invention has been made in order to solve the above-described problems, and an object of the present invention is to produce a silicon carbide single crystal capable of achieving high resistance by reducing the concentration of impurities contained therein. It is to provide a method.
  • Patent Document 1 Japanese Patent Laid-Open No. 2002-274994
  • a method for producing a silicon carbide single crystal according to the present invention comprises using a powder obtained by pulverizing a silicon carbide polycrystal produced by chemical vapor deposition as a silicon carbide raw material. Crystal growth.
  • a high-purity silicon carbide powder obtained by pulverizing a silicon carbide polycrystal produced by a chemical vapor deposition method is used as a raw material. Therefore, it is possible to produce a silicon carbide single crystal having a low concentration of impurities contained therein and a high resistivity.
  • FIG. 1 is a schematic diagram showing a silicon carbide single crystal manufacturing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a profile diagram showing the nitrogen concentration inside a silicon carbide single crystal produced by the prior art and the present invention.
  • FIG. 3 is a profile diagram showing a resistance value inside a silicon carbide single crystal manufactured according to the prior art and the present invention.
  • a silicon carbide single crystal manufacturing apparatus 1 includes a graphite crucible 3 in which a silicon carbide raw material 2 is housed and a seed crystal 4 on the back surface.
  • a lid 5 that is attached and covers the opening of the crucible 3, a porous heat insulating material 6 that covers the entire crucible 3 including the lid 5, and a heating furnace 7 that accommodates the entire heat insulating material 6 including the crucible 3. .
  • a silicon carbide polycrystal produced by chemical vapor deposition is pulverized, and the powder obtained by the pulverization treatment is used.
  • the silicon carbide raw material 2 is supplied into a crucible 3 having an opening.
  • the opening of crucible 3 is covered with lid 5 so that seed crystal 4 and silicon carbide raw material 2 face each other.
  • the silicon carbide source material 2 is sublimated to form a silicon carbide single crystal on the surface of the seed crystal 4. Let it grow.
  • the powder obtained by pulverizing the silicon carbide polycrystal produced by the chemical vapor deposition method is carbonized.
  • a silicon carbide single crystal is grown as the silicon raw material 2.
  • FIGS. As shown in FIG. 5, a silicon carbide single crystal having a low nitrogen concentration and a high resistivity can be produced as compared with a silicon carbide single crystal produced by a conventional technique.
  • the nitrogen concentration shown in FIG. 2 indicates the result measured by SIMS analysis.
  • the resistance values shown in Fig. 3 are non-contact eddy current detection type measuring instrument (resistance value 1 X 10 3 [ ⁇ 'cm]) and non-contact type CV curve measuring type measuring instrument (resistance value> 1 ⁇ 10 5 [ ⁇ 'cm]) Show.
  • the present invention can be used as a substrate for a high-frequency semiconductor device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

On fait croître un monocristal de carbure de silicium en utilisant, comme matière première pour le carbure de silicium, une poudre produite par broyage d'un polycristal de carbure de silicium obtenu par déposition en phase vapeur par procédé chimique, ce par quoi l'on peut obtenir un monocristal du carbure de silicium ayant une faible concentration en impuretés dans son intérieur et une résistivité électrique élevée.
PCT/JP2007/071771 2006-11-09 2007-11-09 Procédé de fabrication d'un monocristal de carbure de silicium WO2008056761A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006304066A JP2008120617A (ja) 2006-11-09 2006-11-09 炭化珪素単結晶の製造方法
JP2006-304066 2006-11-09

Publications (1)

Publication Number Publication Date
WO2008056761A1 true WO2008056761A1 (fr) 2008-05-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/071771 WO2008056761A1 (fr) 2006-11-09 2007-11-09 Procédé de fabrication d'un monocristal de carbure de silicium

Country Status (2)

Country Link
JP (1) JP2008120617A (fr)
WO (1) WO2008056761A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101812730A (zh) * 2010-04-23 2010-08-25 中南大学 超长单晶β-SiC纳米线无金属催化剂的制备方法
CN105821471A (zh) * 2016-05-10 2016-08-03 山东大学 一种低应力高纯半绝缘SiC 单晶的制备方法
CN114585777A (zh) * 2019-10-24 2022-06-03 哈纳材料公司 用于制备碳化硅粉末和单晶碳化硅的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10291899A (ja) * 1997-04-21 1998-11-04 Showa Denko Kk 炭化ケイ素単結晶の製造方法及びその製造装置
JPH11116398A (ja) * 1997-10-15 1999-04-27 Showa Denko Kk 炭化珪素単結晶の製造方法
JP2002053395A (ja) * 2000-06-01 2002-02-19 Mitsui Eng & Shipbuild Co Ltd α−ＳｉＣウェハの製造方法
JP2002274994A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
JP2003073194A (ja) * 2001-06-22 2003-03-12 Bridgestone Corp 炭化ケイ素単結晶及びその製造方法
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10291899A (ja) * 1997-04-21 1998-11-04 Showa Denko Kk 炭化ケイ素単結晶の製造方法及びその製造装置
JPH11116398A (ja) * 1997-10-15 1999-04-27 Showa Denko Kk 炭化珪素単結晶の製造方法
JP2002053395A (ja) * 2000-06-01 2002-02-19 Mitsui Eng & Shipbuild Co Ltd α−ＳｉＣウェハの製造方法
JP2002274994A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
JP2003073194A (ja) * 2001-06-22 2003-03-12 Bridgestone Corp 炭化ケイ素単結晶及びその製造方法
JP2005239496A (ja) * 2004-02-27 2005-09-08 Nippon Steel Corp 炭化珪素単結晶育成用炭化珪素原料と炭化珪素単結晶及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101812730A (zh) * 2010-04-23 2010-08-25 中南大学 超长单晶β-SiC纳米线无金属催化剂的制备方法
CN105821471A (zh) * 2016-05-10 2016-08-03 山东大学 一种低应力高纯半绝缘SiC 单晶的制备方法
CN114585777A (zh) * 2019-10-24 2022-06-03 哈纳材料公司 用于制备碳化硅粉末和单晶碳化硅的方法

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