WO2008044479A1 - Système de lithographie à faisceau d'électrons et cette lithographie - Google Patents

Système de lithographie à faisceau d'électrons et cette lithographie Download PDF

Info

Publication number
WO2008044479A1
WO2008044479A1 PCT/JP2007/068807 JP2007068807W WO2008044479A1 WO 2008044479 A1 WO2008044479 A1 WO 2008044479A1 JP 2007068807 W JP2007068807 W JP 2007068807W WO 2008044479 A1 WO2008044479 A1 WO 2008044479A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
lens
refocus
stage
electrode
Prior art date
Application number
PCT/JP2007/068807
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Yasuda
Takeshi Haraguchi
Hitoshi Tanaka
Akio Yamada
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2008538632A priority Critical patent/JPWO2008044479A1/ja
Publication of WO2008044479A1 publication Critical patent/WO2008044479A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

Definitions

  • Electron beam exposure apparatus and electron beam exposure method are Electron beam exposure apparatus and electron beam exposure method
  • the present invention relates to an electron beam exposure apparatus and an electron beam exposure method, and in particular, an electron beam exposure apparatus and an electron beam exposure that can change the shape and size of a beam using a variable rectangular opening or a partial collective pattern. Regarding the method.
  • variable rectangular opening or a plurality of mask patterns are prepared in a mask, and they are selected by beam deflection and transferred and exposed to a sample! /, The
  • an electron beam exposure apparatus that performs partial batch exposure.
  • a beam is irradiated to one pattern area selected by beam deflection from a plurality of patterns arranged on the mask, and the beam cross section is formed into a pattern shape. Further, the beam that has passed through the mask is deflected back by a subsequent deflector, reduced at a fixed reduction rate determined by the electron optical system, and transferred onto the sample.
  • Patent Document 1 discloses a method for controlling a focusing coil in synchronization with the size of a rectangular beam.
  • Patent Document 2 discloses a method of measuring and correcting a positional deviation of a beam axis when performing electron beam refocusing.
  • a refocus coil is installed, and an amount of current proportional to the cross-sectional area of the shaped beam is passed through the refocus coil to adjust the focus of the beam. For example, when the beam size is large, a larger current is passed through the refocusing coil in proportion to the cross-sectional area of the beam so that the convergence effect of the electron beam is strengthened.
  • the refocusing execution time is the time until a predetermined current is passed through the refocusing coil until a stable current is obtained.
  • the time is about 300ns, and the exposure waiting time is long.
  • Patent Document 1 Japanese Patent Laid-Open No. Sho 56-94740
  • Patent Document 2 JP-A-58-121625
  • the present invention has been made in view of the power and problems of the prior art, and shortens the refocus time and improves the throughput in electron beam exposure that can change the shape and size of the beam. It is an object to provide an electron beam exposure apparatus and an electron beam exposure method capable of achieving the above.
  • the above-described problems include an electron gun that emits an electron beam, shaping means having an opening for shaping the electron beam, a projection lens that forms an image of the electron beam on a sample surface, and the projection lens.
  • a focus lens composed of an electrostatic multipole lens that corrects the focus of the electron beam, and a voltage according to the cross-sectional area of the electron beam shaped by the shaping means.
  • the refocusing lens may have three stages of quadrupole electrostatic electrodes in the beam axis direction of the electron beam, and the three stages of quadrupoles.
  • the first and third electrodes may have the same length, and the length of the second electrode may be twice the length of the second electrode.
  • the polarity of the voltage applied to the X-direction electrode in the first, second, and third stages is opposite to the polarity of the voltage applied to the y-direction electrode.
  • the applied voltage is opposite in polarity to the voltage applied to the second X-direction electrode, the voltage applied to the first X-direction electrode, and the third X-direction electrode.
  • the polarity of the voltage applied to the electrodes is the same, and the polarity of the voltage applied to the first stage y-direction electrode and the voltage applied to the third stage y-direction electrode may be the same. good.
  • an electron beam refocusing lens constituted by an electrostatic electrode is provided.
  • This refocusing lens has a configuration in which three quadrupole lenses are stacked so that the electron beam passing between them is converged.
  • the voltage applied to each electrode constituting the refocus lens is adjusted according to the cross-sectional area of the shaped electron beam. This makes it possible to focus on the sample surface even if the amount of electrons in the irradiated electron beam changes.
  • the electric field is adjusted by the voltage using the electrostatic electrode, the refocusing speed can be increased and the exposure throughput can be improved.
  • FIG. 1 is a block diagram of an electron beam exposure apparatus according to the present invention.
  • FIG. 2 is a configuration diagram of a refocus lens in the electron beam exposure apparatus according to the present invention.
  • FIG. 3 is a diagram illustrating electron deflection control in a single-stage quadrupole electrode.
  • FIG. 4 is a diagram for explaining electron trajectories of a three-stage quadrupole electrostatic electrode.
  • FIG. 5 is a diagram showing a connection relationship of each electrode of the refocus lens.
  • FIG. 6 is a diagram illustrating a refocus circuit.
  • FIG. 7 is a diagram for explaining a refocus amount.
  • FIG. 8 is a diagram (part 1) illustrating calculation of a refocus coefficient.
  • FIG. 9 is a diagram (part 2) illustrating calculation of a refocus coefficient.
  • FIG. 1 is a block diagram of an electron beam exposure apparatus according to the present embodiment.
  • This electron beam exposure apparatus is roughly divided into an electron optical system column 100 and a control unit 200 that controls each part of the electron optical system column 100.
  • the electron optical system column 100 includes an electron beam generation unit 130, a mask deflection unit 140, and a substrate deflection unit 150, and the inside thereof is decompressed.
  • the electron beam EB generated from the electron gun 101 is converged by the first electromagnetic lens 102, and then passes through the rectangular aperture 103a of the beam shaping mask 103 to be transmitted to the electron beam EB.
  • the cross section is shaped into a rectangle.
  • the electron beam EB is imaged on the exposure mask 110 by the second electromagnetic lens 105 of the mask deflection unit 140. Then, the electron beam EB is deflected to a specific pattern S formed on the exposure mask 110 by the first and second electrostatic deflections 104 and 106, and the cross-sectional shape thereof is shaped to the shape of the pattern S.
  • the exposure mask 110 has a force to be fixed to the mask stage 123.
  • the mask stage 123 can be moved in a horizontal plane, and the deflection range (beam) of the first and second electrostatic deflectors 104 and 106 can be When using the pattern S in the portion exceeding the deflection area), the pattern S is moved into the beam deflection area by moving the mask stage 123.
  • an opening capable of changing the electron beam into a predetermined shape may be arranged.
  • the third and fourth electromagnetic lenses 108 and 111 disposed above and below the exposure mask 110 play a role of forming an image of the electron beam EB on the substrate W by adjusting their current amounts.
  • Electron beam EB passing through exposure mask 110 is deflected by third and fourth electrostatic deflectors 112 and 113. After being returned to the optical axis (beam axis) C by the action, the size is reduced by the fifth electromagnetic lens 114.
  • the mask deflector 140 is provided with first and second correction coils 107 and 109, and the beams generated by the first to fourth electrostatic deflectors 104, 106, 112, and 113 by them. Deflection aberration is corrected.
  • the electron beam EB passes through the aperture 115a of the shielding plate 115 constituting the substrate deflecting unit 150, and the focus is adjusted according to the cross-sectional area of the electron beam EB by the refocus lens 128.
  • the first and second projection electromagnetic lenses 116 and 121 are projected onto the substrate W.
  • the image power of the pattern of the exposure mask 110 is transferred to the substrate W at a predetermined reduction ratio, for example, a reduction ratio of 1/10.
  • the substrate deflecting unit 150 is provided with a fifth electrostatic deflector 119 and an electromagnetic deflector 120, and the deflector 119, 120 deflects the electron beam EB so that the substrate W has a predetermined position. An image of the pattern of the exposure mask is projected onto the screen.
  • the substrate deflecting unit 150 is provided with third and fourth corrective coins 117 and 118 for correcting the deflection aberration of the electron beam EB on the substrate W.
  • the substrate W is fixed to a wafer stage 124 that can be moved in the horizontal direction by a driving unit 125 such as a motor. By moving the wafer stage 124, the entire surface of the substrate W can be exposed. It becomes.
  • the control unit 200 includes an electron gun control unit 202, an electron optical system control unit 203, a mask deflection control unit 204, a mask stage control unit 205, a blanking control unit 206, a substrate deflection control unit 206, and a wafer.
  • a stage control unit 208 and a refocus control unit 209 are included.
  • the electron gun control unit 202 controls the electron gun 101 to control the acceleration voltage of the electron beam EB, beam emission conditions, and the like.
  • the electron optical system control unit 203 controls the amount of current to the electromagnetic lenses 102105, 108, 111, 114, 116, and 121, and the magnification, focal position, etc. of the electron optical system in which these electromagnetic lenses are configured. Adjust.
  • the blanking control unit 20 controls the voltage applied to the blanking electrode 127 to deflect the electron beam EB generated from before the start of exposure onto the shielding plate 115, and onto the substrate W before exposure. Prevent EB irradiation.
  • the substrate deflection control unit 207 controls the voltage applied to the fifth electrostatic deflector 119 and the amount of current to the electromagnetic deflector 120 to deflect the electron beam EB onto a predetermined position on the substrate W. To be.
  • Wafer stage control unit 208 adjusts the driving amount of driving unit 125 to move substrate W in the horizontal direction so that a desired position on substrate W is irradiated with electron beam EB.
  • the refocus control unit 209 supplies a necessary voltage to each electrode constituting the refocus lens according to the cross-sectional area of the electron beam EB that is shaped through the exposure mask 110.
  • Each of the above-described units 202 to 209 is controlled in an integrated manner by an integrated control system 201 such as a workstation.
  • FIG. 2 shows the configuration of the refocus lens used in this embodiment.
  • FIG. 2 (a) shows a plan view of the refocusing lens 128 installed above the projection lenses 116 and 121 on the electron gun 101 side.
  • FIG. 2 (b) shows a cross-sectional view of the refocus lens 128 as seen from the front.
  • the refocus lens 128 is configured by overlapping an electrostatic quadrupole lens using four electrostatic electrodes at a predetermined interval in the beam axis direction (Z-axis direction).
  • the electrostatic quadrupole lens has a first stage, a second stage, and a third stage from the side closer to the electron gun along the electron beam irradiation direction, and the first stage, the second stage, and the third stage.
  • These electrostatic quadrupole lenses are LSI and LS 2, LS3, respectively.
  • the electrostatic quadrupole lens LS I is composed of four electrostatic electrodes Pl l, P12, P13, and P14, and is centered on the beam axis (Z axis) in the X axis direction, the Y axis direction, etc. Two are arranged at intervals. For example, the length L1 of each electrode is 10mm.
  • the electrostatic quadrupole lens LS2 is composed of four electrostatic electrodes P21, P22, P23, and P24, and is arranged in the lower stage of LS1.
  • the four electrodes of the electrostatic quadrupole lens LS2 are arranged so as to overlap the four electrodes of LS I with a predetermined gap G1 in the Z-axis direction. This predetermined interval G1 is 5 mm, for example.
  • the length L2 of each electrode of the electrostatic quadrupole lens LS2 is twice the length L1 of each electrode of the electrostatic quadrupole lens LS I. For example, if L1 is 10mm, L12 is 20mm And
  • the electrostatic quadrupole lens LS3 includes four electrostatic electrodes P31, P32, P33, and P34, and is arranged in the lower stage of LS2.
  • the four electrodes of the electrostatic quadrupole lens LS3 are arranged so as to overlap the four electrodes of LS2 with a predetermined gap G2 in the Z-axis direction.
  • This predetermined gap G2 is, for example, 5 mm.
  • each electrode of the electrostatic quadrupole lens LS 3 is the same as that of LS 1.
  • FIG. 3 shows a plan view of a one-stage electrostatic quadrupole lens.
  • Electrons that pass through in the Z-axis direction travel by receiving forces in the X-axis direction and the Y-axis direction.
  • b is the length of the parallel plates
  • Vd is the voltage applied between the plates
  • V0 is the incident voltage of electrons (for example, 50 kV).
  • FIG. 4 is a diagram for explaining the trajectory of electrons of the three-stage quadrupole electrostatic electrode.
  • the Z axis in Fig. 4 is assumed to be the beam axis, and the electron beam travels from left to right in the figure.
  • the X-axis side shows the trajectory C1 of the electron beam in the X direction
  • the y-axis side shows the trajectory C2 in the Y direction of the electron beam.
  • the first quadrupole lens acts as a convex lens
  • the second quadrupole lens acts as a concave lens
  • the third step The quadrupole lens works as a convex lens.
  • the first quadrupole lens acts as a concave lens
  • the second quadrupole lens acts as a convex lens
  • the third quadrupole lens Acts as a concave lens.
  • the incident angle to the final focal point z2 can be almost the same in both the X and y directions. Therefore, by using this three-stage quadrupole electrostatic electrode, it is possible to easily adjust the focus.
  • FIG. 5 shows the plan views of the electrostatic quadrupole lenses LS1, LS2, and LS3 side by side for convenience.
  • a voltage of ⁇ Vy is supplied to the electrostatic electrodes P11 and P13, and + V is supplied to P12 and P14.
  • a voltage is applied to each electrode of LS2 in the next stage so that the potential is opposite to that of each electrode of the LSI. That is, P21 and P23 are marked with + Vy, and P22 and P24 are marked with Vx '.
  • the refocus control unit 209 multiplies the cross-sectional area of the shaped electron beam by the refocus coefficient, and supplies it to each electrode.
  • FIG. 6 is a diagram showing a configuration of a refocus circuit that applies a predetermined voltage to each electrode of the refocus lens.
  • the refocusing circuit 42 converts four voltage values (digital values) specified by the refocusing control unit 209 for performing refocusing through the DAC 43 to analog de- duction.
  • the analog voltage converted to the predetermined electrode is supplied through the voltage amplifier 44.
  • the cross-sectional area of the electron beam to be shaped is calculated from exposure mask data and electron beam deflection data stored in the storage unit 41. For example, as shown in FIG. 7, the opening 110a of the exposure mask is selected, and the cross section in which the deflected electron beam EB is irradiated onto the exposure mask 110 is EBS. At this time, the cross-sectional area Fes of the shaped electron beam is the area where the opening 110a and the cross-section EBS of the electron beam overlap.
  • the refocus coefficient is calculated by a known method as described below.
  • An electron beam having two beam sizes is used, and a refocus amount that minimizes the blur of the beam edge is obtained for each of the electron beams.
  • the beam current passing through the rectangular aperture 103a is constant and the refocus amount is substantially proportional to the current of the beam passing through the exposure mask 110, the exposure mask 110 and the electron beam at this position
  • a voltage proportional to the area where the image overlaps that is, a voltage force corresponding to the amount of deflection in the deflectors 104 and 106, is supplied to each electrode of the refocus lens as a refocus amount.
  • the beam edge blur amount is measured as follows.
  • a tantalum film 82 having an electron reflectivity higher than that of silicon Si is formed on the silicon silicon wafer 81.
  • the beams are scanned by the deflectors 104 and 106 so that the electron beam 83 crosses the tantalum film 82.
  • the reflected electrons 84 from the irradiation point are detected by the electron detector.
  • the amount of detected electrons is obtained as shown in FIG.
  • This electron detection amount is differentiated with respect to the beam scanning position to obtain the waveform shown in Fig. 8 (c), and the distance at which the maximum value changes from 90% to 10% is obtained as the beam edge blur amount ⁇ . .
  • the relationship between the cross-sectional area of the electron beam and the refocus amount (refocus coefficient G;! To G4) is linearly approximated.
  • the refocus coefficient when the cross-sectional area is S1 is GS1
  • the correlation between the cross-sectional area and the refocus coefficient is obtained by a straight line passing through the two points.
  • the correlation is similarly obtained for the four refocus coefficients. Based on this, the refocus coefficient is determined from the area of the block pattern of arbitrary shape.
  • a refocus coefficient is determined in order to adjust the focus of the electron beam every time an exposure mask is selected.
  • the refocus coefficient is measured by measuring the beam blur for two electron beams having different cross-sectional areas, and the refocus coefficient G1 so that the beam blur is minimized. To determine G4.
  • the size of the cross-sectional area of the irradiated electron beam is extracted from the storage unit 41 in which the exposure data is stored.
  • the voltage value applied to each electrode is determined by applying the refocus coefficients G1 to G4 according to the size.
  • the voltage value is calculated at the same time as the voltage is applied to the deflectors 104 and 106.
  • the time until the voltage is stabilized after applying a voltage to the deflector is 50 [ns], but the refocus current is stabilized for about 300 [ns]. It was over.
  • the voltage stabilization time for focus correction is 50 [ns], which is a short time until the voltage value to be applied to each electrode is determined from the size of the electron beam. Even if time is taken into consideration, the exposure waiting time is about 100 [ns], and the exposure can be started in a short time, about three times as long as the conventional method, so that the exposure throughput can be improved.
  • a refocusing lens including an electrostatic electrode is provided.
  • This refocus lens has a structure in which three quadrupole lenses are stacked so that the electron beam passing between them is converged.
  • the voltage applied to each electrode constituting the refocus lens is adjusted according to the cross-sectional area of the electron beam.
  • the focus is adjusted even if the amount of electrons in the electron beam changes according to the cross-sectional area of the electron beam It becomes possible.
  • the electric field is adjusted simply by applying a voltage using an electrostatic electrode, the refocusing speed can be increased and the exposure throughput can be improved.
  • the force S described for the case where the voltage applied to each electrode of the refocusing lens uses four values to perform the refocusing is not limited to this, and the three-stage quadrupole is not limited thereto.
  • a voltage may be separately applied to each of the 12 electrostatic electrodes constituting the lens. In this case, it becomes possible to perform refocusing with higher accuracy.
  • the refocus lens having a configuration in which the quadrupole lens is stacked in three stages has been described!
  • the present invention is not limited thereto, and may be configured with more stages than three stages. good.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

La présente invention concerne un système de lithographie à faisceau d'électrons et une lithographie à faisceau d'électrons dans lesquels le temps de refocalisation est raccourci et la production améliorée. Le système de lithographie à faisceau d'électrons se compose d'un canon à électrons destiné à émettre un faisceau d'électrons, un moyen de façonnage qui comporte une ouverture qui donne une forme au faisceau d'électrons, une lentille de projection qui met au point le faisceau d'électrons sur une surface d'échantillon, une lentille de refocalisation installée au-dessus de la lentille de projection et composée d'une lentille multipolaire électrostatique pour corriger le point focal du faisceau d'électrons, ainsi qu'un moyen de contrôle qui permet d'appliquer une tension correspondant à la zone de section du faisceau d'électrons formé par le moyen de façonnage sur la lentille de refocalisation. La lentille de refocalisation peut avoir trois étages d'électrodes électrostatiques quadripolaires le long de l'axe du faisceau d'électrons. La longueur des électrodes du premier et du troisième étage peut être égale et celle de l'électrode du second étage peut être de deux fois la longueur de l'électrode du premier étage.
PCT/JP2007/068807 2006-10-05 2007-09-27 Système de lithographie à faisceau d'électrons et cette lithographie WO2008044479A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008538632A JPWO2008044479A1 (ja) 2006-10-05 2007-09-27 電子ビーム露光装置及び電子ビーム露光方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-273912 2006-10-05
JP2006273912A JP4889431B2 (ja) 2006-10-05 2006-10-05 電子ビーム露光装置及び電子ビーム露光方法

Publications (1)

Publication Number Publication Date
WO2008044479A1 true WO2008044479A1 (fr) 2008-04-17

Family

ID=39282690

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068807 WO2008044479A1 (fr) 2006-10-05 2007-09-27 Système de lithographie à faisceau d'électrons et cette lithographie

Country Status (3)

Country Link
JP (2) JP4889431B2 (fr)
TW (1) TW200823969A (fr)
WO (1) WO2008044479A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI712866B (zh) * 2018-09-21 2020-12-11 台灣積體電路製造股份有限公司 用於電子束微影及增加生產量的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5528753B2 (ja) * 2009-09-25 2014-06-25 株式会社アドバンテスト 電子ビーム露光装置
JP5462569B2 (ja) * 2009-09-25 2014-04-02 株式会社アドバンテスト 電子ビーム露光装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133715A (ja) * 1985-12-06 1987-06-16 Toshiba Corp 荷電ビ−ム描画装置
JP2002299207A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 荷電粒子ビーム描画装置
JP2004203595A (ja) * 2002-12-26 2004-07-22 Furukawa Co Ltd クレーンのフック操作装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62249417A (ja) * 1986-04-23 1987-10-30 Hitachi Vlsi Eng Corp 電子線描画装置
NL8602196A (nl) * 1986-08-29 1988-03-16 Philips Nv Geladen deeltjes bestralingsapparaat met optisch vervormbaar bundel begrenzend diafragma.
JPH0314219A (ja) * 1989-06-13 1991-01-22 Toshiba Corp 電子ビーム描画装置
JPH03119717A (ja) * 1989-09-30 1991-05-22 Fujitsu Ltd 荷電粒子露光装置および露光方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133715A (ja) * 1985-12-06 1987-06-16 Toshiba Corp 荷電ビ−ム描画装置
JP2002299207A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 荷電粒子ビーム描画装置
JP2004203595A (ja) * 2002-12-26 2004-07-22 Furukawa Co Ltd クレーンのフック操作装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI712866B (zh) * 2018-09-21 2020-12-11 台灣積體電路製造股份有限公司 用於電子束微影及增加生產量的方法
US11054748B2 (en) 2018-09-21 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy insertion for improving throughput of electron beam lithography
US11526081B2 (en) 2018-09-21 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy insertion for improving throughput of electron beam lithography
US11899367B2 (en) 2018-09-21 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Dummy insertion for improving throughput of electron beam lithography

Also Published As

Publication number Publication date
JPWO2008044479A1 (ja) 2010-02-04
JP4889431B2 (ja) 2012-03-07
TW200823969A (en) 2008-06-01
JP2008091827A (ja) 2008-04-17

Similar Documents

Publication Publication Date Title
US7005658B2 (en) Charged particle beam exposure apparatus and method
US6472672B1 (en) Electron beam exposure apparatus and its control method
US6552353B1 (en) Multi-electron beam exposure method and apparatus and device manufacturing method
JP6128744B2 (ja) 描画装置、描画方法、および、物品の製造方法
JP3993334B2 (ja) 荷電ビーム描画装置
US7041988B2 (en) Electron beam exposure apparatus and electron beam processing apparatus
JP6823823B2 (ja) 荷電粒子ビーム描画装置、その制御方法および補正描画データ作成方法
EP2388801B1 (fr) Système multi-colonne de lithographie par faisceau d'électrons et son procédé de réglage d'orbite du faisceau d'électrons
JP4207232B2 (ja) 荷電ビーム露光装置
JP2008153131A (ja) 荷電粒子ビーム装置
US6838682B2 (en) Electron beam exposure equipment and electron beam exposure method
JP4889431B2 (ja) 電子ビーム露光装置及び電子ビーム露光方法
KR20140130028A (ko) 묘화 장치 및 물품의 제조 방법
JP4018197B2 (ja) 電子ビーム露光方法及び電子ビーム露光装置
JP2004311472A (ja) 電子線描画装置
US20150044614A1 (en) Drawing apparatus, and method of manufacturing article
JP5528753B2 (ja) 電子ビーム露光装置
JP4870392B2 (ja) 電子ビーム描画装置、電子ビームの焦点ずれ補正方法及び電子ビームの焦点ずれ測定方法
JP2004047766A (ja) 電子ビーム露光制御方法とその装置
JP2001332473A (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
KR20220079969A (ko) 하전 입자 빔 디바이스 및 하전 입자 빔 디바이스를 작동시키는 방법
JP6951673B2 (ja) 荷電粒子ビーム描画装置およびその制御方法
JP4143204B2 (ja) 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP2006203067A (ja) 荷電粒子線露光装置における露光調整方法
JPH10308341A (ja) 電子ビーム露光方法及び電子ビーム露光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07828553

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008538632

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07828553

Country of ref document: EP

Kind code of ref document: A1