WO2008016017A1 - dispositif d'imagerie à semi-conducteurs ET SON PROCÉDÉ DE FABRICATION, APPAREIL D'INFORMATIONS ÉLECTRONIQUES, SYSTÈME DE pulvérisation cathodique à ionisation - Google Patents

dispositif d'imagerie à semi-conducteurs ET SON PROCÉDÉ DE FABRICATION, APPAREIL D'INFORMATIONS ÉLECTRONIQUES, SYSTÈME DE pulvérisation cathodique à ionisation Download PDF

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Publication number
WO2008016017A1
WO2008016017A1 PCT/JP2007/064919 JP2007064919W WO2008016017A1 WO 2008016017 A1 WO2008016017 A1 WO 2008016017A1 JP 2007064919 W JP2007064919 W JP 2007064919W WO 2008016017 A1 WO2008016017 A1 WO 2008016017A1
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Prior art keywords
waveguide
solid
film
imaging device
state imaging
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PCT/JP2007/064919
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English (en)
Japanese (ja)
Inventor
Yasuhiko Sueyoshi
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Sharp Kabushiki Kaisha
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Publication of WO2008016017A1 publication Critical patent/WO2008016017A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Definitions

  • Imaging device for solid-solid body imaging and manufacturing method thereof, electronic information information device, Ionized sputter-packing device
  • the present invention is based on the CCCCDD type that captures a captured image by photoelectrically converting image light from an object to be photographed.
  • which solid-state imaging imaging element and its manufacturing and manufacturing method such as solid-state imaging imaging element and CCMMOOSS type solid-solid imaging imaging element
  • the solid-state solid-state imaging system is provided with a waveguide waveguide for the purpose of increasing the light collection and collection efficiency of light on the light receiving and receiving light sensor unit.
  • Manufacturing and manufacturing method of imaging image element element and solid-state body imaging and imaging element element manufactured and manufactured by the manufacturing and manufacturing method method here In addition, an example of using the solid-state solid-state image pickup element as an image input force device for the image pickup image section is also used.
  • a digital camera such as a digital camera, a digital camera, a digital camera, a digital camera, and a digital camera.
  • What kind of electronic device information device such as Simimiliri, mobile phone charging device with power memerala, and how to manufacture and manufacture the solid-state imaging device Irritation used for method
  • a photo that constitutes each of a plurality of pixels arranged in a two-dimensional shape A configuration in which an on-chip microlens is provided on a light-receiving sensor unit such as a diode with an insulating layer in between is the mainstream.
  • a light-receiving sensor unit such as a diode with an insulating layer in between
  • Patent Document 1 discloses a configuration of a solid-state imaging device in which a waveguide is provided in an insulating layer on each light receiving sensor unit so as to face the light receiving sensor unit. Is disclosed. According to this configuration, the incident light transmitted through the on-chip microlens can be efficiently guided onto the light receiving sensor unit by the waveguide.
  • FIG. 4 is a longitudinal sectional view showing a configuration example of a main part of a conventional solid-state imaging device. Note that this conventional solid-state imaging device has a force S in which a plurality of pixel portions are arranged in a two-dimensional matrix in the row direction and the column direction in the imaging region. The cross-sectional structure corresponding to one pixel part of the device is shown!
  • the light receiving sensor unit constituting the pixel unit at a predetermined position of the semiconductor substrate 31
  • a silicon nitride film (SiN film) 33 having functions such as insulation-surface protection and hydrogen supply to the light receiving sensor section 32 is provided on the semiconductor substrate 31 on which the light receiving sensor section 32 is formed.
  • the light receiving sensor section 32 is covered with an insulating layer 34 such as a silicon oxide film via a SiN film 33, and a wiring material, for example, three wiring layers 35 are embedded in a predetermined position of the insulating layer 34. Is provided. In this way, the insulating layer 34 on the light receiving sensor portion 32 is formed thick by the multilayer wiring layer 35.
  • the insulating layer 34 on the light receiving sensor unit 32 is provided with a waveguide forming hole in the waveguide forming process in order to improve the incidence efficiency.
  • a reflection film 37 having a high reflectivity metal film force such as A1 is provided via a base metal film.
  • a transparent material is embedded in the waveguide forming hole to form a waveguide 38.
  • the insulating film 34 is flattened above, and a passivation film 39 and a color filter 40 are provided thereon in this order, and a light receiving sensor on the color filter 40
  • the object on the light receiving sensor 32 is opposite the position corresponding to the part 32.
  • the conventional solid-state imaging device 30 in which the waveguide 38 for increasing the light condensing efficiency is provided on the light receiving sensor unit 32 is configured.
  • the light incident on the waveguide 38 via the on-chip microlens 41 and the color filter 40 reflects the reflection film 37 that covers the side wall of the waveguide forming hole. Since it is guided onto the light receiving sensor unit 32 while being reflected by the light, it is possible to improve the light utilization efficiency S.
  • FIGS. 5A (a) to 5A (c) and FIGS. 5B (d) to 5B (f) are longitudinal sectional views of main parts for explaining the respective manufacturing steps for manufacturing the solid-state imaging device of FIG. It is.
  • a plurality of light receiving sensor portions 32 that receive incident light (subject light) and photoelectrically convert it are formed at predetermined positions on the semiconductor substrate 31 and formed thereon.
  • insulating layer 34 and a wiring layer 35 are sequentially stacked thereon, and a multilayer (here, three layers) wiring layer 35 is formed in the insulating layer 34.
  • a waveguide forming hole 38a is formed in the insulating layer 34 corresponding to the light receiving sensor portion 32 by photolithography and etching.
  • a metal film such as an A1 film is formed by a sputtering method as the base metal film 36 to be the base film of the reflective film.
  • the base metal film 36 is formed on the surface of the insulating layer 34 including the inside of the waveguide forming hole 38a.
  • an A1 film or the like is formed as a metal film to be the reflective film 37 on the base metal film 36 including the waveguide forming hole 38a by the CVD method.
  • the base metal film 36 covering the side wall in the waveguide forming hole 38a and the reflective film 37 thereon are left, and other positions.
  • the underlying metal film 36 and the reflective film 37 are removed.
  • the base metal film 36 and the reflective film 37 are formed on the surface of the base metal film 36 only on the side wall in the waveguide forming hole 38a. .
  • a transparent material such as a silicon oxide film or SiO film is buried in the waveguide forming hole 38a by using a known plasma method or high density plasma method (HDP method), for example.
  • a transparent material such as SOG (Spin on Glass) or SOD (Spin on Dielectric) is embedded in the waveguide forming hole 38a using a coating method. Thereafter, a planarization process is performed to remove the material film formed in the portion other than the inside of the waveguide forming hole 38a, and as shown in FIG. A waveguide 38 is formed to increase the light collection efficiency.
  • SOG Spin on Glass
  • SOD Spin on Dielectric
  • a passivation film 39 and a color filter 40 are formed in this order on the entire surface including the transparent material embedded in the insulating layer 34 and the waveguide forming hole 38a, and correspond to the light receiving sensor portion 32 of the color filter 40.
  • a passivation film 39 and a color filter 40 are formed in this order on the entire surface including the transparent material embedded in the insulating layer 34 and the waveguide forming hole 38a, and correspond to the light receiving sensor portion 32 of the color filter 40.
  • the CMOS solid-state imaging device 30 including the waveguide 38 that increases the light collection efficiency on the light receiving sensor unit 32 can be manufactured.
  • Patent Document 1 JP 2005-5471 A
  • the reflective film 37 such as the A1 film is formed by the low temperature CVD method with good coverage
  • the side wall of the waveguide forming hole 38a is covered. Since it is difficult to grow an A1 film directly on the insulating layer 34, a base metal film 36 such as an A1 film is provided on the insulating layer 34 by a sputtering method that can be easily formed. Therefore, a base metal film forming process for forming such a base metal film 36 is further required, and the number of processes is further increased.
  • the present invention solves the above-described conventional problems, and provides a method for manufacturing a solid-state imaging device capable of improving the light collection efficiency by providing a waveguide on a light-receiving sensor unit with an increased number of steps, and Solid-state imaging device manufactured by this manufacturing method, electronic information equipment using this solid-state imaging device as an image input device (solid-state imaging device) in an imaging unit, and ionization sputtering apparatus used for the manufacturing method of this solid-state imaging device The purpose is to provide. Means for solving the problem
  • a method for manufacturing a solid-state imaging device of the present invention is a method for manufacturing a solid-state imaging device in which a waveguide is provided in an insulating layer on a light receiving sensor unit that photoelectrically converts incident light.
  • a reflection film forming step of forming a reflection film only on the side wall of the waveguide is provided, and thereby the above object is achieved.
  • a waveguide is provided in the insulating layer on the light receiving sensor unit that photoelectrically converts incident light.
  • the solid-state imaging device manufacturing method includes a reflection film forming step of forming a reflection film on the side wall of the waveguide by ionization sputtering, thereby achieving the above object.
  • a plurality of light receiving sensor portions for photoelectrically converting incident light are provided on a surface portion of a semiconductor substrate, and a waveguide is formed in an insulating layer on the light receiving sensor portion.
  • a hole forming step of forming a waveguide forming hole in the insulating layer on the light receiving sensor unit, and the waveguide by an ionized sputtering method A reflective film forming step of forming a reflective film only on the side wall surface in the formation hole, and thereby the above object is achieved.
  • a plurality of light receiving sensor portions for photoelectrically converting incident light are provided on a surface portion of a semiconductor substrate, and a waveguide is provided in an insulating layer on the light receiving sensor portion.
  • a hole forming step of forming a waveguide forming hole in the insulating layer on the light receiving sensor portion, and the formation of the waveguide by ionized sputtering when forming the waveguide, a hole forming step of forming a waveguide forming hole in the insulating layer on the light receiving sensor portion, and the formation of the waveguide by ionized sputtering.
  • the method for producing a solid-state imaging device of the present invention further includes a waveguide material embedding step of embedding the waveguide forming hole in which the reflective film is formed with a transparent material.
  • the step of forming the reflective film may include the bottom of the waveguide formation hole and the waveguide formation by the ionized target material at the time of forming the reflective film. Reflective film material deposited on the outer plane of the hole is removed by reverse sputtering.
  • the reflecting film forming step may be performed in direct contact with the insulating layer without forming a base film on the side wall surface in the waveguide forming hole.
  • the reflective film is formed.
  • a metal film made of A1, Ag, Au, Ti, W, Cu, or an alloy thereof is formed as the reflective film in the method for producing a solid-state imaging device of the present invention.
  • Ti A metal compound film made of N, WN, TiW or WSi is formed.
  • a silicon oxide film is formed as an insulating layer in the method for manufacturing a solid-state imaging device of the present invention.
  • a bias voltage is applied to the semiconductor substrate using a substrate bias RF power source when the reflective film is formed.
  • the ionized particles of the material to be the reflective film are electrically attracted in the direction of the semiconductor substrate.
  • the bias power of the substrate bias RF power supply is set to 400 W or more and 2000 W or less.
  • the light collecting sensor is disposed on the insulating layer so as to face the light receiving sensor portion via the waveguide.
  • particles released from the target force by colliding an inert gas ion against a target constituted by a desired deposition material Is ionized as ionized particles in the generated high-density plasma, and a bias voltage is applied to the semiconductor substrate to draw the ionized particles in the direction of the semiconductor substrate.
  • An ionization sputtering apparatus provided with a substrate bias voltage applying means for forming a deposited material film is used for the ionized sputtering method to form the reflective film as the desired deposited material film.
  • the light receiving sensor portions are respectively formed at the predetermined positions of the semiconductor substrate, and the light receiving sensor portions are formed thereon. It further includes a light receiving portion / multilayer wiring forming process for forming the insulating layer and the wiring layer in multiple layers.
  • the solid-state image sensor of the present invention is manufactured by the method for manufacturing the solid-state image sensor of the present invention.
  • the reflective film and the insulating film are in direct contact with each other, thereby achieving the above object.
  • An electronic information device uses a solid-state image sensor manufactured by the method for manufacturing a solid-state image sensor according to the present invention for an imaging unit, and thereby the above-described object is achieved.
  • particles emitted from a target by colliding with an inert gas ion against a target composed of a desired deposition material are generated in the generated high-density plasma.
  • a substrate bias voltage applying means for forming a desired deposition material film, thereby achieving the above object.
  • the bias power power of the substrate bias voltage applying means is required. Can be set to 400W or more and 2000W or less.
  • the ionization sputtering apparatus of the present invention has a high density in which particles emitted from the target are generated by colliding with an inert gas ion against a target composed of a desired deposition material.
  • a substrate bias voltage applying means for forming the material film, thereby achieving the above object.
  • a solid-state imaging device in which each waveguide is provided in an insulating layer on a plurality of light receiving sensor portions that photoelectrically convert subject light, and a reflective film is provided on a side wall portion of the waveguide.
  • a reflective film is formed by ionized sputtering, a uniform reflective film is formed directly on the side wall of the waveguide forming hole without a base film (base metal film) as in the prior art.
  • the reflective film deposited on the bottom of the waveguide forming hole and the external plane of the waveguide forming hole (waveguide) is struck and removed by the ionized target material. (Reverse sputtering).
  • the bias power of the substrate bias RF power source is set to 400 W or more and 2000 W or less.
  • the bias power is 400W or more
  • the reverse sputtering acts to remove the reflective film on the surface facing in the sputtering direction.
  • the maximum device capacity is 2000W.
  • the reflection film for example, a metal film such as Al, Ag, Au, Ti, W, or Cu, or a metal compound film such as TiN, WN, TiW, or WSi is used.
  • a reflective film can be formed.
  • a uniform reflection film is directly formed on the side walls of the respective waveguides provided in the insulating layers on the plurality of light receiving sensor portions for photoelectrically converting subject light by ionized sputtering.
  • the reflective film deposited on the bottom of the waveguide and the external plane of the waveguide forming hole can be removed naturally, which makes it possible to reduce the number of processes and simplify the manufacturing process.
  • a solid-state imaging device having excellent light collection efficiency and good sensitivity can be easily manufactured by a simplified manufacturing process.
  • FIG. 1 is a schematic diagram for explaining a configuration example of an ionization sputtering apparatus used in the method for manufacturing a solid-state imaging device of the present embodiment.
  • FIG. 2 is a longitudinal sectional view showing an example of a configuration of a main part of a solid-state imaging device according to an embodiment of the present invention.
  • FIGS. 3A and 3B are longitudinal sectional views of main parts for explaining the respective manufacturing steps (part 1) for manufacturing the solid-state imaging device of FIG.
  • FIGS. 3C and 3D are longitudinal sectional views of main parts for explaining the respective manufacturing steps (part 2) for manufacturing the solid-state imaging device of FIG.
  • FIG. 4 is a longitudinal sectional view showing a configuration example of a main part of a conventional solid-state imaging device.
  • FIG. 5A (a) (c) is a longitudinal sectional view of a main part for explaining each manufacturing process (part 1) for manufacturing the solid-state imaging device of FIG.
  • FIG. 5B (d) (f) is a longitudinal sectional view of an essential part for explaining each manufacturing process (part 2) for manufacturing the solid-state imaging device of FIG.
  • Solid-state imaging device solid-state imaging device
  • FIG. 1 is a schematic diagram for explaining a configuration example of an ionization sputtering apparatus used in the method for manufacturing a solid-state imaging device of the present embodiment.
  • an ionization sputtering apparatus 1 applies a bias voltage to a coil 3 as an ionization means for generating a high-density plasma 2, an RF power source 4 for generating high-density plasma, and a wafer 5 as a semiconductor substrate. It has a substrate bias RF power source 6 as a substrate bias voltage applying means for applying it.
  • the ionization means (the coil 3 and the RF power source 4 for generating the high-density plasma) impinges particles released from the target by colliding with an inert gas ion against the target composed of a desired deposition material. Ionized as ionized particles in the generated high-density plasma
  • the substrate bias voltage applying means applies a bias voltage to the wafer 5 and draws ionized particles in the direction of the wafer 5, whereby the side wall in the waveguide forming hole of the wafer 5 is formed.
  • a desired deposited material film is formed only on the surface.
  • the bias power of the applying means should be set to 400W or more and 2000W or less.
  • the ionization sputtering apparatus 1 originally has a force for sufficiently forming a desired deposited material film on the bottom of the waveguide forming hole.
  • the ionization sputtering apparatus 1 is reversed. In this case, sputtering is applied so that a desired deposition material film (reflection film) is not formed on the bottom of the waveguide forming hole.
  • the particles 7 emitted from the target 7 are ionized in the high-density plasma 2 generated inside the coil 3 by the voltage supplied with the RF power 4 for generating the high-density plasma. Generate.
  • the target 7 for example, an A1 material can be used.
  • a bias voltage (ion ion) applied to the wafer 5 by using the substrate bias RF power source 6.
  • a desired deposition material film (for example, A1 film) is formed on the wafer 5 by drawing the ionized particles 8 in the direction toward the wafer 5 by a voltage having a polarity opposite to that of the ionized particles).
  • FIG. 2 is a vertical cross-sectional view showing an exemplary configuration of a main part of the solid-state imaging device according to the embodiment of the present invention.
  • the solid-state imaging device of the present embodiment has a force in which a plurality of pixel portions are arranged in a matrix in the row direction and the column direction in the imaging region in the imaging region. 2 shows a cross-sectional configuration corresponding to one pixel portion of the solid-state imaging device of the embodiment.
  • a light receiving sensor unit 12 that photoelectrically converts image light from a subject is formed at each predetermined position of the semiconductor substrate 11. .
  • a silicon nitride film (SiN film) 13 having functions such as insulating surface protection and hydrogen supply to the light receiving sensor unit 12 is provided on the semiconductor substrate 11.
  • the light receiving sensor unit 12 is covered with an insulating layer 14 such as a silicon oxide film via a SiN film 13, and wiring materials are sequentially buried in grooves formed at respective predetermined positions of the insulating layer 14.
  • the insulating layer 14 is provided with a multilayer (for example, three layers) wiring layer 15 in this case.
  • the insulating layer 14 above the light receiving sensor unit 12 is provided with a waveguide 18 in order to improve the incident efficiency, and a waveguide forming hole is provided in this waveguide forming process.
  • a reflection film 17 made of a metal film is provided on the side wall of the waveguide forming hole. This reflective film 17 can be formed directly on the side wall of the waveguide forming hole by ionization sputtering without a base metal film as in the prior art. As will be described later, the reflection film 17 is not provided at the bottom of the waveguide forming hole because it is necessary for light to be incident on the light receiving sensor portion 12 and removed by reverse sputtering.
  • a waveguide 18 is configured by filling a transparent material (not shown) in the waveguide forming hole.
  • the reflection film 17 is formed on the side wall of the waveguide 18. Since light is repeatedly reflected inside the waveguide 18 and guided to the light receiving sensor unit 12, light collection efficiency on the light receiving sensor unit 12 can be increased.
  • An insulating layer 14 is provided on the uppermost wiring layer 15 in a flattened manner, and a passivation film 19 and a color filter 20 are provided on the insulating layer 14 in this order.
  • a passivation film 19 and a color filter 20 are provided on the insulating layer 14 in this order.
  • the solid-state imaging device 10 of the present embodiment in which the waveguide 18 for increasing the light collection efficiency is provided on the light receiving sensor unit 12 is configured.
  • Manufacturing method of the solid-state imaging device 10 of FIG. 2 including a reflective film forming step of directly forming the reflective film 17 without a conventional base metal film using the ionized sputtering method by the ionized sputtering apparatus 1 of FIG. Will be described in detail with reference to FIGS. 3A (a) to 3B (d).
  • FIGS. 3A (a) to 3B (d) are main part longitudinal cross-sectional views for explaining each manufacturing process for manufacturing the solid-state imaging device of FIG.
  • each light receiving sensor part 12 that receives incident light and performs photoelectric conversion is formed at each predetermined position of the semiconductor substrate 11, respectively. Then, a silicon nitride film 13 is formed thereon, and each of an insulating layer 14 made of a silicon oxide film and the like and three wiring layers 15 in the insulating layer 14 are formed.
  • a waveguide forming hole 18 a such as a square hole or a round hole is formed in 14.
  • a reactive gas used in the reactive ion etching method a certain degree of selectivity is ensured between the SiO film, which is the insulating layer 14, and the SiN film 13.
  • the force S can be used to prevent the SiN film 13 from penetrating through the bottom of the waveguide forming hole 18a.
  • the reflecting film 17 and the inner peripheral side wall surface of the waveguide forming hole 18a are formed by ionizing sputtering using the ionizing sputtering apparatus 1 of FIG.
  • A1 film or the like is formed as a metal film. That is, the reflective film 17 is formed directly in contact with the insulating layer 14 without forming a base metal film (A1 film) on the side wall surface of the waveguide forming hole 18a as in the prior art.
  • This ionization sputtering method was explained using Fig. 1.
  • the reflective film 17 when the reflective film 17 is formed, at least a part of the deposited material sputtered from the target 7 is ionized, and ionized particles of the ionized target material (for example, A1 material; aluminum material) are transferred to the substrate bias.
  • a reflective film 17 is formed by applying a bias voltage to the semiconductor substrate 11 (wafer 5) using the RF power source 6 and electrically attracting the semiconductor substrate 11 toward the semiconductor substrate 11.
  • the metal film deposited on the portion other than the side wall of the waveguide forming hole 18a, such as the bottom of the forming hole 18a and the external plane of the waveguide forming hole 18a, is an ionized target material (the reflective film 17 is formed). It is struck by ionized particles of A1 material) and reverse sputtered to be removed.
  • the metal film (reflective film 17) such as the bottom of the waveguide forming hole 18a on the substrate surface orthogonal to the irradiation direction of the ionized particles and the flat portion outside the waveguide forming hole is hit by the ionized particles.
  • Reverse sputtering is activated when the bias power is 400 W or more, and the maximum device capacity is 2000 W. If a device with a maximum device capacity of 3000 W is obtained, the bias power power is 400 W or more and 3000 W.
  • the bias power can be within 400 W or more at which reverse sputtering works.
  • the material of the reflective film 17 deposited on the bottom of the waveguide forming hole 18a is removed by reverse sputtering with the ionized target material (A1 material).
  • the reflective film 17 having a metal film force such as the A1 film can be formed only on the side wall surface in the waveguide forming positive hole 18a.
  • the waveguide material embedding step of FIG. 3B (d) for example, using a known plasma method or high density plasma method (HDP method), for example, a silicon oxide film SiO film
  • a transparent material such as 2 is embedded in the waveguide forming hole 18a.
  • a transparent material such as SOG (Spin on Glass) or SOD (Spin on Dielectric) is embedded in the waveguide forming hole 18a.
  • a flattening process is performed to form in a portion other than the waveguide forming hole 18a.
  • Transparent The material film (waveguide material film) is removed, and a waveguide 18 as shown in FIG. 3B (d) is formed only in the waveguide forming hole 18a.
  • a waveguide forming process is configured by the hole forming process, the waveguide material embedding process, and the reflective film forming process. After the waveguide forming process, the light receiving sensor unit 12 and the insulating layer 14 are formed on the insulating layer 14.
  • a microlens forming step is performed for forming the condensing on-chip microlens 21 so as to face each other through the waveguide 18.
  • a passivation film 19 and a color finolator 20 are formed in this order on the entire surface including the insulating layer 14 and the transparent material film embedded in the waveguide forming hole 18a.
  • the on-chip microlens 21 is formed at a position corresponding to the light receiving sensor portion 12 of the color filter 20 (opposite position), that is, above the waveguide 18.
  • the waveguide 18 is provided in the insulating layer 14 on the light receiving sensor unit 12, and the reflection film 17 is formed directly only on the side wall surface of the waveguide 18.
  • the waveguide 18 is provided in the insulating layer 14 above the light receiving sensor unit 12, and the solid-state imaging in which the reflection film 17 is provided on the side wall of the waveguide 18.
  • the reflection film 17 is formed only on the side wall surface in the waveguide forming hole 18a by the ionized sputtering method using the ionizing sputtering apparatus 1 in FIG.
  • a uniform reflection film 17 is formed directly on the side wall surface, and at the same time, a reflection film deposited on the bottom of the waveguide forming hole 18a and the planar portion outside the waveguide forming hole by reverse sputtering with the ionized target material 7. 17 is hit and removed.
  • the A1 film is formed as the reflective film 17, but not limited to A1, Ag, A metal film made of Au, Ti, W or Cu, or an alloy thereof can be formed and used as a reflection film. Further, a metal compound film made of TiN, WN, TiW or WSi may be formed as the reflective film. Furthermore, as a reflective film, a laminated film of a metal film made of Al, Ag, Au, Ti, W or Cu, or an alloy thereof, and a metal compound film made of TiN, WN, TiW or WSi may be formed. Good. In this case, the reflective film has a good reflectance.
  • the force described for the CMOS type solid-state imaging device 10 is not limited thereto, and the present invention can also be applied to a CCD type solid-state imaging device.
  • the waveguide 18 is provided in the insulating layer 14 on the light receiving sensor unit 12 that photoelectrically converts incident light (subject light).
  • the reflective film forming process is performed to form the reflective film 17 only on the side wall of the waveguide 18 by the ionized sputtering method, the light is guided onto the light receiving sensor unit 12 without increasing the number of processes. It is possible to achieve the object of the present invention that can improve the light collection efficiency by providing the waveguide 18.
  • a plurality of light receiving sensor portions 12 that photoelectrically convert incident light are provided on the surface portion (or a predetermined depth portion on the surface side) of the semiconductor substrate 11, and an insulating layer 14 on the light receiving sensor portion 12 is provided.
  • the hole forming step of forming the waveguide forming hole 18a in the insulating layer 14 on the light receiving sensor portion 12 when the waveguide 18 is formed is formed.
  • the object of the present invention that can improve the light collection efficiency. That is, when manufacturing a solid-state imaging device in which the waveguide 18 is provided in the insulating layer 14 on the light receiving sensor unit 12 and the light collection rate is improved, the reverse sputtering is applied by the ionized sputtering method and the waveguide is formed. If the reflection film 17 is formed directly on the side wall in the hole 18a without the base film as in the conventional case, the waveguide 18 is formed on the light receiving sensor part 12 with an increased number of processes as in the conventional case. It can be provided to improve the light collection efficiency.
  • the electronic information device of the present invention is a memory such as a recording medium that records data after performing predetermined signal processing for recording high-quality image data obtained by using the solid-state imaging device 10 of the above-described embodiment of the present invention as an imaging unit.
  • a display means such as a liquid crystal display device for displaying the image data on a display screen such as a liquid crystal display screen after performing predetermined signal processing for display of the image data, and after performing predetermined signal processing of the image data for communication It has at least one of communication means such as a transmission / reception device for performing communication processing and image output means for printing (printing) and outputting (printing out) the image data.
  • communication means such as a transmission / reception device for performing communication processing and image output means for printing (printing) and outputting (printing out) the image data.
  • the present invention relates to a solid-state imaging device such as a CCD solid-state imaging device or a CMOS-type solid-state imaging device that photoelectrically converts image light from a subject and picks it up, and a manufacturing method thereof.
  • digital cameras such as digital video cameras and digital still cameras
  • electronic information devices such as image input cameras, scanners, facsimiles, mobile phone devices with power cameras, and ionization sputtering devices used in the manufacturing method of this solid-state imaging device.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention permet d'augmenter l'efficacité de condensation en fournissant un guide d'onde au-dessus d'une section capteur de réception de lumière sans augmenter le nombre d'étapes. Si est fabriqué un dispositif d'imagerie à semi-conducteurs (10) possédant un guide d'onde (18) disposé dans une couche isolante (14) au-dessus d'une section capteur de réception de lumière (12) et un film réfléchissant (17) disposé sur la partie de paroi latérale du guide d'onde (18), un film réfléchissant (17) est formé dans un trou (18a) pour former un guide d'onde grâce à un système de pulvérisation cathodique à ionisation (1) illustré sur la figure 1 à l'aide d'un procédé de pulvérisation cathodique à ionisation, un film réfléchissant uniforme (17) étant formé rapidement à la surface de la paroi latérale du trou (18a) pour former un guide d'onde et, dans le même temps, un film réfléchissant (17) déposé au fond du trou (18a) pour former un guide d'onde par un matériau cible ionisé (7) est extrait. En conséquence, une étape consistant à extraire le film réfléchissant (17) du film de métal formé au fond du guide d'onde (18) de l'art antérieur est éliminée. De plus, un film sous-jacent conventionnel n'est pas constitué entre le film réfléchissant (17) et la surface de la paroi latérale du trou (18a) pour former un guide d'onde.
PCT/JP2007/064919 2006-07-31 2007-07-30 dispositif d'imagerie à semi-conducteurs ET SON PROCÉDÉ DE FABRICATION, APPAREIL D'INFORMATIONS ÉLECTRONIQUES, SYSTÈME DE pulvérisation cathodique à ionisation WO2008016017A1 (fr)

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JP2006207928A JP2008034699A (ja) 2006-07-31 2006-07-31 固体撮像素子およびその製造方法、電子情報機器、イオン化スパッタリング装置
JP2006-207928 2006-07-31

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CN108415124A (zh) * 2018-05-08 2018-08-17 上海美维科技有限公司 一种高密度光波导结构及印制电路板及其制备方法
CN113744641A (zh) * 2021-08-19 2021-12-03 惠州华星光电显示有限公司 一种显示装置

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JP2011061133A (ja) * 2009-09-14 2011-03-24 Zycube:Kk 半導体イメージセンサとその製造法
JP5010699B2 (ja) * 2010-03-03 2012-08-29 株式会社東芝 光学素子およびカメラモジュール
CN103066089B (zh) * 2012-12-26 2018-08-28 上海集成电路研发中心有限公司 Cmos影像传感器像元结构及其制造方法
US10608039B1 (en) * 2018-10-02 2020-03-31 Foveon, Inc. Imaging arrays having focal plane phase detecting pixel sensors

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JP2005005472A (ja) * 2003-06-11 2005-01-06 Sony Corp 固体撮像素子
JP2005209676A (ja) * 2004-01-20 2005-08-04 Sony Corp 固体撮像装置および固体撮像装置の製造方法
WO2006043554A1 (fr) * 2004-10-19 2006-04-27 Tokyo Electron Limited Procédé et équipement de déposition de film par pulvérisation de plasma

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JP2005005472A (ja) * 2003-06-11 2005-01-06 Sony Corp 固体撮像素子
JP2005209676A (ja) * 2004-01-20 2005-08-04 Sony Corp 固体撮像装置および固体撮像装置の製造方法
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CN108415124A (zh) * 2018-05-08 2018-08-17 上海美维科技有限公司 一种高密度光波导结构及印制电路板及其制备方法
CN113744641A (zh) * 2021-08-19 2021-12-03 惠州华星光电显示有限公司 一种显示装置

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