WO2007119292A1 - 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法 - Google Patents
反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法 Download PDFInfo
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- WO2007119292A1 WO2007119292A1 PCT/JP2007/053382 JP2007053382W WO2007119292A1 WO 2007119292 A1 WO2007119292 A1 WO 2007119292A1 JP 2007053382 W JP2007053382 W JP 2007053382W WO 2007119292 A1 WO2007119292 A1 WO 2007119292A1
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- optical system
- projection optical
- projection
- field
- catadioptric
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
Definitions
- Catadioptric projection optical system catadioptric projection optical system, catadioptric optical apparatus, scanning exposure apparatus, and micro device manufacturing method
- the present invention relates to a catadioptric projection optical system and a catadioptric optical device that project an image of a first object (mask, reticle, etc.) onto a second object (substrate, etc.), an image of the first object
- the present invention relates to a scanning exposure apparatus for projecting exposure onto a second object, and a microdevice manufacturing method using the scanning exposure apparatus.
- a mask (reticle, photomask, etc.) pattern is applied to a resist-coated plate (glass plate, semiconductor wafer, etc.) via a projection optical system.
- a projection exposure apparatus for projecting onto a screen is used.
- a projection exposure apparatus (stepper) that uses a step-and-repeat method to batch-expose a reticle pattern to each shot area on a plate has been widely used.
- a plurality of small partial projection optical systems having the same magnification are arranged in a plurality of rows at predetermined intervals along the scanning direction, while scanning the mask and the plate.
- a step-and-scan projection exposure system has been proposed in which each partial projection optical system exposes the mask pattern onto the plate! RU
- the optical axis on the mask and the optical axis on the plate of the plurality of projection optical systems are arranged at substantially the same position. Therefore, there has been a problem that the patterns scanned and exposed on the plates by the projection optical systems in different rows cannot be connected to each other!
- the first field has a first field of view on the first surface
- a first projection optical system for projecting a magnified image of a part of the first object onto a first projection area on a second surface based on light from the first field; and a second field of view on the first surface.
- a second projection optical system that projects a magnified image of a part of the first object onto a second projection area on a second surface based on light from the second field of view, and the first projection
- the optical system transfers light from the first field of view along a first direction intersecting an axial direction connecting the first surface and the second surface, and sees the light from the axial direction.
- a first light flux transport unit that guides the first field of view to the first projection region located on the first direction side, and the second projection optical system directs light from the second field of view in a direction opposite to the first direction.
- a second light flux transport unit that transports along the second direction of the second visual field and guides it to the second projection region located on the second direction side of the second visual field when viewed from the axial direction.
- a first interval that is an interval along the scanning direction on the first surface with respect to the second field of view is Dm
- the first projection region and the second projection region on the second surface are on the second surface
- a scanning exposure apparatus characterized by satisfying the above is provided.
- the positional relationship between the image of the first object and the second object is projected with respect to the scanning direction while projecting the image of the first object onto the second object.
- the scanning exposure apparatus for transferring and exposing the pattern of the first object onto the second object while changing a plurality of fields each having a field of view on the first row along the non-scanning direction that is a direction crossing the scanning direction
- a plurality of projection optical systems each having a field of view on a second column different from the first column in the non-scanning direction.
- a second row projection optical system wherein the first row projection optical system has a plurality of projection regions conjugate with the plurality of fields of view of the first row projection optical system on the third row on the second surface.
- the second row projection optical system includes a plurality of projections conjugate with the plurality of fields of view of the second row projection optical system.
- a region is formed on the fourth row on the second surface, and a first interval that is an interval along the scanning direction on the first surface between the first row and the second row is Dm, A second interval which is an interval along the scanning direction on the second surface between the third column and the fourth column is Dp, and a magnification of the first and second projection optical systems is j8.
- a scanning exposure apparatus characterized by satisfying the above is provided.
- the catadioptric that forms an image of the first object arranged on the first surface with an enlarged projection magnification on the second object arranged on the second surface
- the concave reflecting mirror disposed in the optical path between the first surface and the second surface, and the optical path between the first surface and the concave reflecting mirror are disposed.
- a first lens group, a second lens group disposed in an optical path between the first lens group and the concave reflecting mirror, and an optical path between the second lens group and the second surface.
- a second deflecting member disposed in an optical path between the first deflecting member and the second object, and a first deflecting member that deflects light across the optical axis of the first lens group.
- Catadioptric projection optical system wherein is provided.
- the catadioptric that forms the image of the first object arranged on the first surface with an enlarged projection magnification on the second object arranged on the second surface In the projection optical system, the concave reflecting mirror disposed in the optical path between the first surface and the second surface, and the optical path between the first surface and the second surface are disposed.
- a catadioptric projection optical system comprising: a plurality of lenses; and an optical characteristic adjusting mechanism disposed between a pupil position of the catadioptric projection optical system and the second surface.
- the first imaging optical system for forming the intermediate image of the first surface, and the second optically conjugate the intermediate image and the second surface.
- a catadioptric optical device comprising an imaging optical system, wherein at least one of the first imaging optical system and the second imaging optical system is configured by the catadioptric projection optical system of the present invention.
- a reflection-bending optical device is provided.
- the positional relationship between the projection device that projects the image of the first surface onto the second surface and the first object and the second object is changed with respect to the scanning direction.
- the projection apparatus includes a first projection optical apparatus positioned at a first position with respect to the scanning direction, and A second projection optical device positioned at a second position different from the first position with respect to the scanning direction, wherein the first and second projection optical devices are the catadioptric projection optical system or catadioptric of the present invention.
- a scanning exposure apparatus including an optical device is provided.
- a method for manufacturing a microdevice is provided.
- FIG. 1 is a diagram showing a configuration of a scanning exposure apparatus that works on the first embodiment.
- FIG. 2 is a diagram showing a configuration of an illumination optical system and a projection optical system that are useful for the first embodiment.
- FIG. 3 is a view showing a mask used in a scanning exposure apparatus that works on the embodiment.
- FIG. 4 is a diagram showing a field of view and an image field of the projection optical system related to the first embodiment.
- FIG. 5 is a diagram showing a configuration of an illumination optical system and a projection optical system that are useful for the second embodiment.
- FIG. 6 is a diagram showing a field of view and an image field of a projection optical system that are useful for the second embodiment.
- FIG. 7 is a diagram showing a configuration of an illumination optical system and a projection optical system that are useful for the third embodiment.
- FIG. 8 is a diagram showing a configuration of a projection optical system that is powerful in the fourth embodiment.
- FIG. 9 is a diagram showing a field of view and an image field of a projection optical system when an illumination field stop having an arc-shaped opening is arranged in the illumination optical system.
- FIG. 10 is a flowchart for explaining a microdevice manufacturing method according to the embodiment.
- FIG. 11 is a diagram showing a configuration of a projection optical system according to the first example.
- FIG. 12 is an aberration diagram of the projection optical system according to the first example.
- FIG. 13 is an aberration diagram of the projection optical system according to the first example.
- FIG. 14 is a diagram showing a configuration of a projection optical system according to a second example.
- FIG. 15 is an aberration diagram of the projection optical system according to the second example.
- FIG. 16 is an aberration diagram of the projection optical system according to the second example.
- a part of the pattern of the mask (first object) Ml is larger than the outer diameter force OOmm as the photosensitive substrate, and a plurality of reflections are partially projected onto the plate (second object) P1.
- the image of the pattern formed on the mask Ml is scanned onto the plate P1 by moving the mask Ml and the plate P1 in the scanning direction synchronously with the projection optical device PL consisting of the refraction-type projection optical systems PL1 to PL7.
- Step of exposure An “and” scanning type scanning projection exposure apparatus will be described as an example.
- the outer shape is larger than 500mm, one side or diagonal is more than 500mm! Uh.
- XYZ Cartesian coordinate system is X
- the axis and the Y axis are set so as to be parallel to the plate PI, and the Z axis is set in a direction perpendicular to the plate P1.
- the XY plane is actually set parallel to the horizontal plane and the Z axis is set to the vertical direction.
- the direction (scanning direction) for moving the plate P1 is set to the X direction.
- FIG. 1 is a perspective view showing a schematic configuration of the entire scanning projection exposure apparatus according to this embodiment.
- the scanning projection exposure apparatus according to this embodiment includes a light source such as an ultra-high pressure mercury lamp light source.
- the light beam emitted from the light source is reflected by the elliptical mirror 2 and the dichroic mirror 3 and enters the collimating lens 4. That is, light in the wavelength range including g-line (wavelength 436 nm), h-line (wavelength 405 nm), and i-line (wavelength 365 nm) light is extracted by the reflective film of the elliptical mirror 2 and the reflective film of the dichroic mirror 3.
- the divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 becomes parallel light by the collimating lens 4 and passes through the wavelength selection filter 5 that transmits only the light beam in a predetermined exposure wavelength region.
- the light guide fiber 8 is a random light guide fiber configured by, for example, randomly bundling a large number of fiber strands, and includes an entrance 8a and 7 exits (hereinafter referred to as exits 8b, 8c, 8d, 8e, 8f, 8g and 8h).
- exits 8b, 8c, 8d, 8e, 8f, 8g and 8h The light beam incident on the entrance 8a of the light guide fiber 8 propagates through the inside of the light guide fiber 8, and then is divided and emitted from the 7 exits 8b to 8h, and partially illuminates the mask Ml.
- each of the partial illumination optical systems (hereinafter referred to as partial illumination optical systems IL1, IL2, IL3, IL4, IL5, IL6, and IL7).
- the light that has passed through each of the partial illumination optical systems I L1 to IL7 illuminates the mask Ml almost uniformly.
- the mask Ml is fixed by a mask holder (not shown) and is placed on a mask stage (not shown).
- a laser interferometer (not shown) is arranged on the mask stage, and the mask stage laser interferometer measures and controls the position of the mask stage.
- the plate P1 is fixed by a plate holder (not shown), and is placed on a plate stage (not shown).
- a movable mirror 50 is provided on the plate stage.
- a laser beam emitted from a plate stage laser interferometer (not shown) enters and reflects on the movable mirror 50. The position of the plate stage is measured and controlled based on the interference of the reflected and reflected laser light.
- the partial illumination optical systems IL1, IL3, IL5, and IL7 described above are arranged on the rear side (first direction side) in the scanning direction as a first column with a predetermined interval in a direction orthogonal to the scanning direction.
- the projection optical systems PL1, PL3, PL5, and PL7 provided corresponding to the illumination optical systems IL1, IL3, IL5, and IL7 are scanned in the first row with a predetermined interval in the direction orthogonal to the scanning direction. It is arranged on the rear side (first direction side).
- the partial illumination optical systems IL2, IL4, and IL6 are arranged as a second row at a predetermined interval in the direction orthogonal to the scanning direction on the front side (second direction side) in the scanning direction, and the partial illumination optical systems IL2, Similarly, the projection optical systems PL2, PL4, and PL6 provided corresponding to IL4 and IL6 are arranged in the second row with a predetermined interval in the direction orthogonal to the scanning direction, on the front side (second direction side) in the scanning direction. Has been placed.
- the first row projection optical systems PL1, PL3, PL5, and PL7 each have a field of view along the first row on the first surface on which the mask Ml is arranged, and the first row projection optical systems PL1, PL3, PL5, and PL7 Images are formed in the image field (projection region) having a predetermined interval in the scanning orthogonal direction on the third row on the two surfaces.
- the second row projection optical systems PL2, PL4, and PL6 each have a field of view along the second row on the first surface on which the mask Ml is arranged, and the fourth row on the second surface on which the plate P1 is arranged.
- An image is formed on each column in an image field (projection area) having a predetermined interval in the scanning orthogonal direction.
- the OFAXIS alignment system 52 the mask Ml and the force of the plate P1 are used.
- An autofocus system 54 is arranged to match the!
- FIG. 2 is a diagram showing the configuration of the partial illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL2. is there.
- the partial illumination optical systems IL3, IL5, and IL7 have the same configuration as the partial illumination optical system IL1, and the partial illumination optical systems IL4 and IL6 have the same configuration as the partial illumination optical system IL2.
- the projection optical systems PL3, PL5, and PL7 have the same configuration as the projection optical system PL1, and the projection optical systems PL4 and PL6 have the same configuration as the projection optical system PL2.
- the light beam emitted from the exit port 8b of the light guide fiber 8 enters the partial illumination optical system IL1, and the light beam collected by the collimator lens 9b disposed in the vicinity of the exit port 8b is obtained by an optical integrator. It enters a certain fly-eye lens 10b. A large number of secondary light source power beams formed on the rear focal plane of the fly-eye lens 10b illuminate the mask Ml almost uniformly by the condenser lens l ib. In addition, the light beam collected by the collimator lens 9c disposed in the vicinity of the exit port 8c is incident on the fly-eye lens 10c that is an optical integrator. Light beams from a number of secondary light sources formed on the rear focal plane of the fly-eye lens 10c illuminate the mask Ml almost uniformly by the condenser lens 11c.
- Projection optical system PL1 is a catadioptric projection optical system that forms a primary image, which is an enlarged image in the field of view on mask Ml, in the image field on plate P1, and in its scanning direction (X-axis direction).
- the magnification is greater than +1 and the magnification in the direction perpendicular to the scan is less than 1.
- Projection optical system PL1 includes a concave reflecting mirror CCMb disposed in the optical path between mask Ml and plate P1, and a first lens disposed in the optical path between mask Ml and concave reflecting mirror CCMb.
- the second lens group G2b disposed in the optical path between the group Gib, the first lens group Gib, and the concave reflecting mirror CCMb, and the optical path between the second lens group G2b and the plate P1.
- the first deflection member FMlb and the second deflection member FM2b are, for example, the second lens group G2b It is possible to configure a first light flux transport unit that travels along the Z-axis direction after the light traveling in the Z-axis direction is transported in the X-axis direction (first direction).
- the projection optical system PL1 includes the concave reflecting mirror CCMb, the first lens group Gib, and the second so that the distance between the mask Ml and the plate PI is larger than the distance between the mask Ml and the concave reflecting mirror CCMb.
- a lens group G2b, a third lens group G3b, a first deflection member FMlb, and a second deflection member FM2b are arranged.
- the optical members having refractive power constituting the first lens group Glb, the second lens group G2b, and the third lens group G3b are arranged so that their optical axes are parallel to the direction of gravity.
- the first lens group Glb, the concave reflecting mirror CCMb, and the third lens group G3b are arranged so that the distance on the plate P1 side is larger than the distance on the mask Ml side.
- the numerical aperture on the plate P1 side of the projection optical system PL1 is determined in the optical path between the concave reflecting mirror CCMb and the second lens group G2b, that is, in the vicinity of the reflecting surface of the concave reflecting mirror CCMb.
- An aperture stop ASb is provided, and the aperture stop ASb is positioned so that the mask Ml side and the plate P1 side are substantially telecentric.
- the position of the aperture stop ASb can be regarded as the pupil plane of the projection optical system PL1.
- the projection optical system PL1 has a focal length of the first lens group Gib of the projection optical system PL1 as fl, a focal length of the third lens group G3b as f3, and a magnification of the projection optical system PL1.
- Projection optical system PL2 has a configuration arranged symmetrically with respect to projection optical system PL1 in the scanning direction, and plays a primary image that is an enlarged image in the field of view on mask Ml, similarly to projection optical system PL1.
- G is a catadioptric projection optical system formed in the image field on P1, and its magnification in the scanning direction (X-axis direction) exceeds +1 times, and the magnification in the scanning orthogonal direction is less than 1.
- the projection optical system PL2 is a concave reflecting mirror CCMc, a first lens group Glc, a second lens group G2c, a third lens group G3c, a first deflection member FMlc, and a second deflection member Comes with FM 2b and aperture stop ASb.
- the first deflection member FMlc and the second deflection member FM2b of the second projection optical system PL2 for example, transmit light traveling in the Z-axis direction from the second lens group G2c in the + X-axis direction (second direction). ),
- the second light flux transfer unit that travels along the Z-axis direction can be configured.
- the position of the aperture stop ASc can be regarded as the pupil plane of the projection optical system PL2.
- the projection optical system PL1 and the projection optical system PL2 are set such that the distance in the scanning direction (X-axis direction) between the centers of the fields of the projection optical system PL1 and the projection optical system PL2 is Dm, and the projection optical system PL1 and the second projection The distance in the scanning direction (X-axis direction) between the centers of the image fields by the optical system PL2 is Dp, and the projection magnification of each of the projection optical system PL1 and the projection optical system PL2 is
- the line segment connecting the field of view of the first projection optical system PL1 and the image field (projection region) is defined as the first line segment (corresponding to the optical axis of the first light flux transfer unit in this example).
- the line segment connecting the field of view of the second projection optical system PL2 and the image field (projection area) overlaps with the second line segment (corresponding to the optical axis of the second light flux transfer unit in this example) as seen from the ⁇ direction. ⁇ ⁇ .
- FIG. 3 is a diagram showing the configuration of the mask Ml used in the scanning exposure apparatus according to this embodiment.
- the mask Ml includes column pattern portions M10 to M16 arranged along the non-scanning direction (Y-axis direction).
- the field of view of the projection optical system PL1 is positioned in the column pattern portion M10
- the field of view of the projection optical system PL2 is positioned in the column pattern portion Mil.
- the field patterns of the projection optical systems PL3 to PL7 are respectively set on the column pattern portions M12 to M16.
- FIG. 4 is a diagram for explaining the state of the field of view and the image field of the projection optical systems PL1 and PL3 arranged as the first row and the projection optical system PL2 arranged as the second row.
- the projection optical system PL1 has a field of view VI and an image field II
- the projection optical system PL2 has a field of view V2 and an image field 12
- the projection optical system PL3 has a field of view V3 and an image field 13, respectively. That is, the projection optical system PL1 forms an enlarged image in the field of view V1 on the mask M1 in the image field 11 on the plate P1.
- the projection optical system PL2 forms an enlarged image in the field of view V2 on the mask Ml in the image field 12 on the plate P1
- the projection optical system PL3 forms an enlarged image of the field of view V3 on the mask Ml.
- a large image is formed in the image field 13 on the plate PI.
- a joint is formed between the image field II of the projection optical system PL1, the image field 12 of the projection optical system PL2, and the image field 12 of the projection optical system PL2 and the image field 13 of the projection optical system PL3.
- the pattern can be continuously formed on the plate P1 by, for example, forming the end of the pattern on the mask that forms the joint on the plate P1 in a zigzag manner.
- the distance between the visual fields of the first and second projection optical systems PL1 and PL2 (the distance between the first column and the second column)
- the mask M1 which has the size of the row pattern parts M11 to M16 aligned in the scanning direction and minimized in the scanning direction as shown in Fig. 3, is used, the pattern continues on the plate P1. Can be formed.
- the optical axis of the first lens group, the second lens group, and the third lens group provided with an optical member having refractive power with respect to gravity. Because they are arranged in parallel, the lenses that make up the projection optical system, i.e., the lenses that make up the first, second, and third lens groups, are enlarged in order to increase the exposure area. Even in this case, it is possible to provide a highly accurate catadioptric projection optical system in which an asymmetric deformation of the optical axis does not occur in the lens. Further, according to the catadioptric projection optics according to the embodiment, since an intermediate image is not formed, the optical configuration can be simplified.
- the lens is provided with a highly accurate catadioptric projection optical system that does not cause asymmetric deformation of the optical axis, it is possible to perform good exposure. Further, since the catadioptric projection optical system has a magnification, it is possible to avoid an increase in the size of the mask and to reduce the manufacturing cost of the mask.
- the illumination optical system and the projection optical system according to the second embodiment are those in which an illumination field stop is arranged in the illumination optical system of the illumination optical system and the projection optical system according to the first embodiment. It is. In other respects, it has the same configuration as the illumination optical system and the projection optical system that are the same as those of the first embodiment. But Therefore, in the description of the second embodiment, a detailed description of the same configuration as the illumination optical system and the projection optical system according to the first embodiment is omitted.
- the same configuration as that of the illumination optical system and the projection optical system for the first embodiment is used.
- the description will be made with the same reference numerals as those used in the embodiment.
- FIG. 5 is a diagram showing the configuration of an illumination optical system and a projection optical system that are useful for the second embodiment.
- the force illumination optical systems IL13 to IL7 and the projection optical systems PL3 to PL7 showing only the illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL2 have the same configuration.
- An illumination field stop 12b having a trapezoidal or hexagonal opening is arranged at a position optically conjugate with the mask Ml on the exit side of the condenser lens ib of the illumination optical system IL1 according to this embodiment.
- the imaging optical system 13b is disposed in the optical path between the illumination field stop 12b and the mask M1.
- an illumination field stop 12c is arranged at a position optically conjugate with the mask Ml on the exit side of the condenser lens 11c of the illumination optical system IL2, and the optical path between the illumination field stop 12c and the mask Ml is arranged.
- An imaging optical system 13c is arranged inside.
- FIG. 6 is a diagram for explaining the state of the field of view and the image field of the projection optical systems PL1, PL3 and the projection optical system PL2 when an illumination field stop having a hexagonal opening is arranged in the illumination optical system.
- FIG. Projection optical system PL1 has hexagonal field VI and image field II
- projection optical system PL2 has hexagonal field V2 and image field 12
- projection optical system PL3 has hexagonal field V3 and image field 13. . That is, the projection optical system PL1 forms an enlarged image in the field VI on the mask M1 whose shape is defined by the illumination field stop in the image field 11 on the plate P1.
- the projection optical system PL2 forms an enlarged image in the field V2 on the mask M1 whose shape is defined by the illumination field stop in the image field 12 on the plate P1, and the projection optical system PL3 Then, an enlarged image in the field of view V3 on the mask Ml is formed in the image field 13 on the plate P1.
- the pattern is synthesized in the non-scanning direction on the plate without performing screen synthesis using the mask pattern as in the scanning exposure apparatus according to the first embodiment. Can be performed satisfactorily.
- an illumination optical system and a projection optical system used in the scanning exposure apparatus according to the third embodiment of the present invention will be described.
- the illumination optical system and projection optical system according to the third embodiment are obtained by changing the configuration of the projection optical system among the illumination optical system and projection optical system according to the first embodiment. .
- Other points are the same as those of the illumination optical system and the projection optical system according to the first embodiment.
- the description of the third embodiment a detailed description of the same configurations as those of the illumination optical system and the projection optical system that are useful for the first embodiment will be omitted.
- the same structure as that of the illumination optical system and the projection optical system according to the first embodiment is used. The description will be made with the same reference numerals as those used in the embodiment.
- FIG. 7 is a diagram showing the configuration of an illumination optical system and a projection optical system that are useful for the third embodiment.
- the force illumination optical systems IL13 to IL7 and the projection optical systems PL3 to PL7 showing only the illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL2 have the same configuration.
- the projection optical systems PL1 and PL2 are the first imaging optical systems 14b and 14c that form an intermediate image of the mask Ml, and the first optical system that optically conjugates the intermediate image and the plate PI. It is composed of a projection optical device having two imaging optical systems 16b and 16c.
- the magnifications of these projection optical systems PL1 and PL2 are set so that the magnification in the scanning direction exceeds +1 and the magnification in the scanning orthogonal direction exceeds +1. That is, these projection optical systems PL 1 and PL 2 form an erect image of the first surface on the second surface with an enlargement magnification.
- field stops 15b and 15c are arranged at positions where intermediate images are formed in the optical path between the first imaging optical systems 14b and 14c and the second imaging optical systems 16b and 16c.
- the second imaging optical systems 16b and 16c have the same configuration as the projection optical systems PL1 and PL2 according to the first embodiment.
- the field stop can be easily arranged, and the field stop can be projected onto the plate with the accuracy of the projection optical system. High-precision projection can be performed.
- the projection optical system according to the fourth embodiment is obtained by providing an optical characteristic adjusting mechanism in the projection optical system according to the first embodiment.
- the projection optical system has the same configuration as that of the first embodiment. Therefore, in the description of the fourth embodiment, a detailed description of the same configuration as that of the projection optical system that works in the first embodiment is omitted. Further, in the description of the projection optical system that works in the fourth embodiment, the same configuration as the projection optical system that works in the first embodiment is the same as that used in the first embodiment. The description will be made with the same reference numerals.
- FIG. 8 is a diagram showing a configuration of a projection optical system that works according to the fourth embodiment.
- the projection optical systems PL1 and PL2 include first optical characteristic adjustment mechanisms AD1b and ADlc each made of a wedge-shaped pair glass in the optical path between the mask Ml and the first lens group Gib and Glc.
- the focus and image plane inclination can be adjusted by moving the glass pane along the wedge angle to change the glass thickness.
- the first optical characteristic adjustment mechanisms ADlb and ADlc are arranged in the optical path on the reduction side of the catadioptric optical system (the object side relative to the aperture stop position of the catadioptric optical system).
- the amount of change in optical characteristics with respect to the amount of movement of the adjustment mechanism can be increased. That is, the sensitivity of the effect of the adjusting mechanism can be improved.
- the adjustment range of the optical characteristics can be expanded without increasing the movement range (stroke) of the adjustment mechanism.
- the projection optical systems PL1 and PL2 include second optical characteristic adjustment mechanisms AD2b and AD2c configured by a rotation mechanism of the second optical path deflection surfaces FM2b and FM2c.
- the second optical characteristic adjusting mechanisms AD2b and AD2c can adjust the rotation of the image by rotating the prism mirror including the second optical path deflection surfaces FM2b and FM2c.
- a third optical characteristic adjusting mechanism AD3b, AD3c configured by three lens groups having the same curvature is provided.
- This third optical characteristic adjustment mechanism AD3b, AD3c is designed to move the lens in the center of the lens group consisting of three identical curvatures in the vertical direction (vertical direction) between mask Ml and plate P1. Adjustments can be made.
- a fourth optical characteristic adjusting mechanism AD4b, AD4c configured with a parallel plate is provided. This fourth optical characteristic adjustment mechanism AD4b, AD4c The image position can be adjusted by inclining the parallel plate with respect to the optical axis.
- the optical characteristic adjusting mechanism AD2b, AD2c in the optical path between the concave reflecting mirrors CCMb, CCMc and the second surface, in other words, in the optical path between the pupil surface and the second surface, Place AD3b and AD3c. Since this optical path is the optical path on the magnification side in the projection optical system, there is an advantage that it is easy to secure a space for arranging these optical characteristic adjusting mechanisms.
- FIG. 9 is a diagram for explaining the state of the field of view and the image field of the projection optical systems PL1, PL3 and the projection optical system PL2 when an illumination field stop having an arc-shaped opening is arranged in the illumination optical system.
- the projection optical system PL1 has an arc-shaped field VI and an image field II
- the projection optical system PL2 has an arc-shaped field V2 and an image field 12
- the projection optical system PL3 has an arc-shaped field V3 and an image field 13.
- the projection optical system PL1 forms an enlarged image in the arc-shaped field VI on the mask Ml whose shape is defined by the illumination field stop in the arc-shaped image field II on the plate P1.
- the projection optical system PL2 forms an enlarged image in the arc-shaped field V2 on the mask Ml whose shape is defined by the illumination field stop in the arc-shaped image field 12 on the plate P1.
- the projection optical system PL3 forms an enlarged image in the arc-shaped field of view V3 on the mask Ml in the arc-shaped image field 13 on the plate P1.
- the second imaging optical systems 16b and 16c have the same configuration as the projection optical systems PL1 and PL2 according to the first embodiment.
- the first imaging optical systems 14b and 14c, or the first imaging optical systems 14b and 14c and the second imaging optical systems 16b and 16c are the same as the projection optical systems PL1 and PL2 according to the first embodiment. You may make it have a structure.
- the shape of the image field formed by the projection optical system may be a trapezoid, for example.
- the image field has a trapezoidal shape, it is preferable that the lower side of the trapezoid (the longer of the two sides parallel to each other in the trapezoid) is oriented toward the optical axis.
- the discharge lamp is provided as the light source, and the required g-line (436 nm) light, h-line (405 nm), and i-line (365 nm) light are selected.
- light from ultraviolet LEDs, KrF excimer laser (248 nm), ArF excimer The present invention can be applied even when laser light from a malasa (193 nm), harmonics of a solid-state laser, or laser light having an ultraviolet semiconductor laser power as a solid-state light source is used.
- a liquid crystal display element as a micro device is obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). You can also.
- a so-called optical lithography process is performed in which a mask pattern is transferred and exposed to a photosensitive substrate using a scanning exposure apparatus that is effective in this embodiment.
- a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate.
- the exposed substrate is subjected to steps such as a development step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402. .
- a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or R, G, B
- a color filter is formed by arranging a set of three stripe filters in the horizontal scanning line direction.
- a cell assembling step 403 is executed.
- a liquid crystal panel liquid crystal cell
- liquid crystal liquid crystal cell
- liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step 401 and the color filter obtained in the color filter formation step 402, and a liquid crystal panel (liquid crystal Cell).
- a module assembly step 404 components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element.
- the liquid crystal display element can be manufactured at a low cost because the scanning exposure apparatus according to this embodiment is used.
- the first lens group, the second lens group, and the third lens group that include an optical member having a refractive power are prevented from being affected by gravity.
- the lenses constituting the projection optical system that is, the first lens group, the second lens group, and the third lens group are arranged to increase the exposure area. Even when the constituting lens is increased in size, it is possible to provide a highly accurate catadioptric projection optical system and catadioptric optical device that does not cause an asymmetric deformation of the optical axis of the lens, and as a result, good pattern transfer can be achieved. It can be carried out.
- the light beams from the plurality of fields of view by the plurality of projection optical systems are transferred in the reverse direction along the first direction by the light beam phase shift member, and the plurality of projection regions At this time, the visual field interval and the projection region interval along the first direction can be set appropriately. Therefore, the pattern can be satisfactorily transferred onto the plate even when different projection optical systems are used.
- the lens is provided with a high-precision catadioptric projection optical system and catadioptric optical apparatus that do not cause asymmetric deformation of the optical axis of the lens, good exposure can be achieved. It can be carried out.
- the catadioptric projection optical system and the catadioptric optical device have a magnification, it is possible to avoid an increase in the size of the mask and to reduce the manufacturing cost of the mask.
- the microdevice manufacturing method of the present invention since the microdevice can be manufactured using a large substrate while avoiding an increase in the size of the mask, the microportion device can be manufactured at low cost. Manufacturing can be performed.
- Tables 1 and 2 show optical member specifications of the catadioptric optical systems PL10 and PL20 according to Example Example 2.
- the surface number of the first column is the order of the surface along the direction of ray travel of the object side force
- the second column is the radius of curvature (mm) of each surface
- the third The column spacing is the spacing on the optical axis (mm)
- the fourth column is the refractive index of the optical member glass material against g-line
- the fifth column is the refractive index of the optical member glass material against h-line
- the sixth column is The refractive index for the i-line of the glass material of the optical member is shown.
- the catadioptric optical system PL10 includes a concave reflecting mirror CCM, a first lens group G1, a second lens group G2, a third lens group G3, a first deflection member FM1, and a second deflection member FM2. ing.
- the first lens group G1 includes a positive meniscus lens L10 having a concave surface facing the mask M, a negative meniscus lens Lll having a concave surface facing the mask M, and a negative meniscus lens having a concave surface facing the mask M. It is composed of L12.
- the second lens group G2 is composed of a biconvex lens L13, a negative large lens L14 having a concave surface directed to the mask M, a biconcave lens L15, and a positive large lens L16 having a concave surface directed to the mask M. It is composed of a third lens group G3, a negative meniscus lens L17 with a concave surface facing plate P, a positive meniscus lens L18 with a concave surface facing plate P, and a biconvex lens L19.
- FIGS. 12 and 13 show aberration diagrams of the catadioptric optical system PL10.
- FIG. 12 (a) shows spherical aberration, (b) shows curvature of field, (c) shows distortion, (d) shows chromatic aberration of magnification, and FIG. 13 shows light beam convergence.
- the aberration is corrected satisfactorily.
- the catadioptric optical system PL20 includes a concave reflecting mirror CCM, a first lens group G1, a second lens group G2, a third lens group G3, a first deflection member FM1, and a second deflection member FM2. ing.
- the first lens group G1 includes a positive mascus lens L20 having a concave surface facing the mask M, and a mask. It consists of a negative negative lens L21 with a concave surface facing M and a negative meniscus lens L22 with a concave surface facing mask M.
- the second lens group G2 includes a biconvex lens L23, a negative large lens L24 with a concave surface facing the mask M, a biconcave lens L25, and a positive large lens L26 with a concave surface facing the mask M.
- the third lens group G3 includes a negative large lens L27 having a concave surface directed to the plate P, a negative large lens L28 having a concave surface directed to the plate P, and a biconvex lens L29.
- FIG. 15 and FIG. 16 show aberration diagrams of the catadioptric optical system PL20.
- FIG. 15 (a) shows spherical aberration, (b) shows field curvature, (c) shows distortion, (d) shows lateral chromatic aberration, and FIG. 16 shows light aberration.
- the gain is corrected satisfactorily.
- the present invention relates to a catadioptric projection optical system and a catadioptric optical apparatus that project an image of a mask, a reticle, etc. onto a substrate, a scanning exposure apparatus that projects and exposes an image of a first object onto a second object, It can be suitably used in a microdevice manufacturing method using the scanning exposure apparatus.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07714853A EP2003506A2 (en) | 2006-03-20 | 2007-02-23 | Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device |
CN2007800096727A CN101405659B (zh) | 2006-03-20 | 2007-02-23 | 投影光学***、扫描曝光装置以及微元件的制造方法 |
JP2008510747A JP5071382B2 (ja) | 2006-03-20 | 2007-02-23 | 走査露光装置及びマイクロデバイスの製造方法 |
KR1020087013491A KR101387834B1 (ko) | 2006-03-20 | 2007-02-23 | 반사굴절 투영광학계, 반사굴절 광학장치, 주사노광장치,마이크로 디바이스의 제조방법 |
US12/201,972 US8274638B2 (en) | 2006-03-20 | 2008-08-29 | Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device |
HK09105344.3A HK1128049A1 (en) | 2006-03-20 | 2009-06-16 | Projecting optical system, scanning exposure device; and method of manufacturing micro device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2006-076011 | 2006-03-20 | ||
JP2006076011 | 2006-03-20 | ||
JP2007-006655 | 2007-01-16 | ||
JP2007006655 | 2007-01-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/201,972 Continuation US8274638B2 (en) | 2006-03-20 | 2008-08-29 | Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device |
Publications (1)
Publication Number | Publication Date |
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WO2007119292A1 true WO2007119292A1 (ja) | 2007-10-25 |
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PCT/JP2007/053382 WO2007119292A1 (ja) | 2006-03-20 | 2007-02-23 | 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法 |
Country Status (8)
Country | Link |
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US (1) | US8274638B2 (ja) |
EP (1) | EP2003506A2 (ja) |
JP (1) | JP5071382B2 (ja) |
KR (1) | KR101387834B1 (ja) |
CN (2) | CN101405659B (ja) |
HK (2) | HK1128049A1 (ja) |
TW (1) | TWI443378B (ja) |
WO (1) | WO2007119292A1 (ja) |
Cited By (6)
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WO2008081963A1 (en) * | 2007-01-04 | 2008-07-10 | Nikon Corporation | Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method |
JP2009204846A (ja) * | 2008-02-27 | 2009-09-10 | Ricoh Co Ltd | 投射光学系・画像表示装置 |
JP2009217244A (ja) * | 2008-02-15 | 2009-09-24 | Canon Inc | 露光装置 |
US8908269B2 (en) | 2004-01-14 | 2014-12-09 | Carl Zeiss Smt Gmbh | Immersion catadioptric projection objective having two intermediate images |
US8913316B2 (en) | 2004-05-17 | 2014-12-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9772478B2 (en) | 2004-01-14 | 2017-09-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with parallel, offset optical axes |
Families Citing this family (5)
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JP5453806B2 (ja) * | 2006-02-16 | 2014-03-26 | 株式会社ニコン | 露光装置、露光方法及びディスプレイの製造方法 |
JP6217651B2 (ja) * | 2012-12-18 | 2017-10-25 | 株式会社ニコン | 基板処理装置、デバイス製造システム及びデバイス製造方法 |
TWI736621B (zh) * | 2016-10-04 | 2021-08-21 | 日商尼康股份有限公司 | 圖案描繪裝置及圖案描繪方法 |
CN111279244B (zh) * | 2017-10-25 | 2022-03-18 | 株式会社尼康 | 图案描绘装置 |
US11933969B2 (en) | 2020-05-29 | 2024-03-19 | Mega1 Company Ltd. | Optical engine module |
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2007
- 2007-02-23 KR KR1020087013491A patent/KR101387834B1/ko active IP Right Grant
- 2007-02-23 WO PCT/JP2007/053382 patent/WO2007119292A1/ja active Application Filing
- 2007-02-23 EP EP07714853A patent/EP2003506A2/en not_active Withdrawn
- 2007-02-23 CN CN2007800096727A patent/CN101405659B/zh active Active
- 2007-02-23 CN CN201110163295.0A patent/CN102253477B/zh active Active
- 2007-02-23 JP JP2008510747A patent/JP5071382B2/ja active Active
- 2007-03-05 TW TW096107462A patent/TWI443378B/zh active
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2008
- 2008-08-29 US US12/201,972 patent/US8274638B2/en active Active
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2009
- 2009-06-16 HK HK09105344.3A patent/HK1128049A1/xx not_active IP Right Cessation
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JPH11265848A (ja) | 1997-12-20 | 1999-09-28 | Carl Zeiss:Fa | 投影露光装置及び露光方法 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8908269B2 (en) | 2004-01-14 | 2014-12-09 | Carl Zeiss Smt Gmbh | Immersion catadioptric projection objective having two intermediate images |
US9772478B2 (en) | 2004-01-14 | 2017-09-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with parallel, offset optical axes |
US8913316B2 (en) | 2004-05-17 | 2014-12-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9019596B2 (en) | 2004-05-17 | 2015-04-28 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9134618B2 (en) | 2004-05-17 | 2015-09-15 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9726979B2 (en) | 2004-05-17 | 2017-08-08 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
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Also Published As
Publication number | Publication date |
---|---|
CN101405659B (zh) | 2011-08-10 |
EP2003506A2 (en) | 2008-12-17 |
JP5071382B2 (ja) | 2012-11-14 |
JPWO2007119292A1 (ja) | 2009-08-27 |
HK1128049A1 (en) | 2009-10-16 |
US8274638B2 (en) | 2012-09-25 |
HK1163822A1 (en) | 2012-09-14 |
KR20080103506A (ko) | 2008-11-27 |
CN102253477A (zh) | 2011-11-23 |
CN102253477B (zh) | 2014-05-28 |
TWI443378B (zh) | 2014-07-01 |
US20090009735A1 (en) | 2009-01-08 |
TW200736662A (en) | 2007-10-01 |
KR101387834B1 (ko) | 2014-04-22 |
EP2003506A9 (en) | 2009-04-15 |
CN101405659A (zh) | 2009-04-08 |
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