WO2006009003A1 - 半導体装置の処理液、処理方法および半導体製造装置 - Google Patents
半導体装置の処理液、処理方法および半導体製造装置 Download PDFInfo
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- WO2006009003A1 WO2006009003A1 PCT/JP2005/012784 JP2005012784W WO2006009003A1 WO 2006009003 A1 WO2006009003 A1 WO 2006009003A1 JP 2005012784 W JP2005012784 W JP 2005012784W WO 2006009003 A1 WO2006009003 A1 WO 2006009003A1
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- Prior art keywords
- semiconductor
- alcohols
- manufacturing apparatus
- ketones
- semiconductor manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 281
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 88
- 239000007788 liquid Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000003672 processing method Methods 0.000 title claims abstract description 50
- 150000002576 ketones Chemical group 0.000 claims abstract description 76
- 239000007864 aqueous solution Substances 0.000 claims abstract description 27
- 238000011282 treatment Methods 0.000 claims description 75
- 150000001298 alcohols Chemical class 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 69
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 52
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 36
- 239000000243 solution Substances 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 238000010828 elution Methods 0.000 claims description 23
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 21
- 229910001882 dioxygen Inorganic materials 0.000 claims description 21
- 229910052736 halogen Inorganic materials 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- 239000012298 atmosphere Substances 0.000 claims description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 18
- 150000002367 halogens Chemical class 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000000746 purification Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000006701 (C1-C7) alkyl group Chemical group 0.000 claims description 3
- 239000013626 chemical specie Substances 0.000 claims 1
- 238000004090 dissolution Methods 0.000 abstract description 5
- 125000003158 alcohol group Chemical group 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 description 74
- 239000010408 film Substances 0.000 description 52
- 239000000758 substrate Substances 0.000 description 45
- 125000004429 atom Chemical group 0.000 description 27
- 238000004140 cleaning Methods 0.000 description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 230000003746 surface roughness Effects 0.000 description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 15
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 9
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 9
- 229910021642 ultra pure water Inorganic materials 0.000 description 9
- 239000012498 ultrapure water Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 238000003795 desorption Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229940044613 1-propanol Drugs 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 processing method Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- QAPXLUZMMFIIBI-UHFFFAOYSA-N 1,1,3,3-tetrafluoropropan-2-one Chemical compound FC(F)C(=O)C(F)F QAPXLUZMMFIIBI-UHFFFAOYSA-N 0.000 description 1
- WPUWNCWLDZMYSC-UHFFFAOYSA-N 1-fluoropropan-2-ol Chemical compound CC(O)CF WPUWNCWLDZMYSC-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Definitions
- the present invention relates to a semiconductor device processing liquid, a processing method, and a semiconductor manufacturing apparatus, and more particularly to a semiconductor device processing liquid, a processing method, and a semiconductor manufacturing apparatus capable of producing a clean and flat semiconductor surface. is there.
- semiconductor surface treatment is performed with an aqueous solution or a non-aqueous solution containing a cleaning composition that also has acid, alkali, and organic strength. Then, after these treatments, water, particularly ultrapure water having a specific resistance value of 18 ⁇ or more has been used for the purpose of rinsing the cleaning composition. The reason is that the cleaning composition adhering to the semiconductor surface is quickly removed, and in some cases, the semiconductor surface is chemically stabilized in a transfer process in a processing atmosphere by terminating hydrogen atoms. . However, this process is for the above purpose and does not contribute to the maintenance and improvement of the surface roughness required for the semiconductor surface.
- Patent Document 1 Japanese Patent Laid-Open No. 11-297656 (hereinafter referred to as Patent Document 1) proposes a method for manufacturing a semiconductor device, a rinsing liquid, and a semiconductor substrate cleaning liquid.
- Patent Document 2 proposes a semiconductor device cleaning solution and a method of manufacturing a semiconductor device using the same.
- Patent Document 1 a mixture of a glycol solvent and water is used for the purpose of selective etching of a different oxide film in cleaning a semiconductor substrate having a silicon oxide insulating film.
- Patent Document 2 a cleaning liquid containing hydrogen fluoride and alcohols is used for the purpose of removing the sidewall polymer and preventing the corrosion of the metal wiring material.
- Patent Documents 1 and 2 are not precise techniques such as etching at the atomic layer level on the semiconductor surface. Further, depending on the effect of the additive composition in some cases, the surface of the semiconductor, particularly the acid surface, may be used. It is conceivable to roughen an innocent semiconductor surface without a coating such as a film. Therefore, it is limited as a use and is not a technology applicable to comprehensive semiconductor manufacturing. In particular, there is an urgent need for the development of a cleaning technique that improves the performance of semiconductor devices by realizing a technology that can make the surface of the semiconductor before the formation of the semiconductor oxide film extremely clean and flat.
- Patent Document 1 Japanese Patent Laid-Open No. 11 297656
- Patent Document 2 JP-A-11-340183
- An object of the present invention is to provide a clean and flat semiconductor surface with less elution of the semiconductor substrate force. It is to provide a processing liquid, a processing method, and a semiconductor manufacturing apparatus that can be created.
- the present invention provides a semiconductor surface treatment solution characterized by treating with an aqueous solution containing at least one of alcohols and ketones, and uses the same.
- a processing method and a manufacturing apparatus are provided. With the processing liquid of the present application, and the processing method and manufacturing apparatus using the processing liquid, a semiconductor device having a process with little elution from the semiconductor surface and a clean and flat surface can be obtained.
- the present invention relates to a treatment liquid and a treatment method characterized by using an aqueous solution in which an atomic elution amount from a semiconductor is 15 atomic layers or less in terms of Z24 hours, and in a semiconductor manufacturing apparatus using them, It is characterized by treatment with an aqueous solution containing at least one kind of ketones.
- atomic layer Z24 time which is the unit of atomic elution from the semiconductor, is the value obtained by dividing the number of dissolved semiconductor atoms for which the measured force is calculated by the area of the semiconductor crystal used for the measurement per unit surface area. It is a numerical value that indicates how many times the number of existing semiconductor atoms.
- the present invention is characterized in that it is treated with an aqueous solution containing at least one of alcohols or ketones, and the structure of the alcohols is R1R2C (0H) R3 (where R1 is substituted with a halogen and a hydroxyl group).
- R2 and R3 are the same as or different from R1, and may be a C1-C4 alkyl group having a straight chain and a branch, which may be substituted with a halogen and a hydroxyl group, or
- R5 is the same as R4)
- a treatment liquid which is at least one of the following: a linear or branched C1-C4 alkyl group or a hydrogen atom, which may be substituted with a halogen and a hydroxyl group) Physical methods and a semiconductor manufacturing apparatus using them.
- the water to be used has a specific resistance value of 18 ⁇ or more! /.
- the average linear roughness (Ra) of the semiconductor surface formed by the treatment liquid, the treatment method and the semiconductor manufacturing apparatus of the present invention is 0.15 nm or less, preferably 0.1 lnm or less, more preferably. Or less than 0.07 nm.
- the present invention relates to a treatment liquid, a treatment method, and a method, wherein the structure of the alcohols and ketones is at least one of C1-C7 alkyl groups or compounds having an alkyl group containing a halogen or a hetero atom.
- the alcohols for example, methyl alcohol, ethyl alcohol, 1 propanol, 1-butanol, 2-butanol and the like are preferable. More preferred is 2-propanol. It may also be a polyhydric alcohol having two or more hydroxyl groups! /.
- the ketones are preferably ethyl methyl ketone, jetyl ketone, and the like, and more preferably acetone. Further, it may be partially substituted with a halogen atom such as fluorine. Also, the alcohols and ketones to be used are not limited to one type, but may be a mixture of two or more types. For example, a combination of one kind from alcohols and one kind from ketones may be used.
- the relative dielectric constant of alcohols and ketons used in the treatment liquid, treatment method and semiconductor manufacturing apparatus of the present invention is 82 or less, preferably specifically methyl alcohol, ethyl alcohol, jetyl ketone or the like. More preferably, 2-propanol, acetone or the like is used.
- 2-propanol it is preferable to use 2-propanol as the alcohol of the present invention, and alcohols and ketones may be further mixed.
- alcohols and ketones Preferable examples include methyl alcohol, ethyl alcohol, jetyl ketone, and acetone.
- the purity of the alcohols and ketones is 99% by mass or more, and preferably 99.9% by mass or more.
- the total amount of metal impurities is desirably 0.1 ppm or less, more preferably lppb or less.
- the concentration of the alcohols and ketones contained in the treatment liquid, the treatment method, and the semiconductor manufacturing apparatus using them is preferably 5% by mass or more. Is 10% by mass or more, more preferably 30% by mass.
- a processing method characterized by using a semiconductor single crystal as a processing solution, a processing method, and a structure to be processed of a semiconductor manufacturing apparatus of the present invention Specifically, for example, silicon is used as a semiconductor material. It is done.
- the plane orientation of the single crystal to be processed For example, (100), (111), (110), etc. It should be noted that it is appropriately turned off for those plane orientations It can also be applied to glazed surfaces.
- the present invention provides a processing method characterized by using a semiconductor polycrystal as a processing solution, a processing method, and a structure to be processed of a semiconductor manufacturing apparatus of the present invention.
- a polycrystal as a semiconductor polycrystal is used.
- Silicon is an example.
- the processing method is characterized in that an amorphous semiconductor is used as the structure to be processed.
- the processing method is characterized in that a semiconductor compound is used as the structure to be processed, and specifically, for example, gallium arsenide or the like.
- a feature of the present invention is that a treatment liquid containing at least one of hydrochloric acid, nitric acid, sulfuric acid, acetic acid, hydrofluoric acid, and ammonium fluoride, a treatment method using the same, and semiconductor manufacturing Device.
- the present invention is characterized in that at least one of nitrogen, hydrogen, oxygen, and ozone is dissolved in water used in the treatment liquid, the treatment method, and the semiconductor manufacturing apparatus.
- a dissolved hydrogen gas lppb or the like is preferable.
- the present invention provides a processing method and a semiconductor manufacturing apparatus characterized by having a step of removing alcohols and ketones adhering to a semiconductor surface after a processing step using an aqueous solution containing one or more of them.
- the semiconductor surface is heated, and more preferably the treatment atmosphere is filled with oxygen gas.
- the semiconductor structure to be processed is heated to 450 ° C.
- the temperature and oxygen gas concentration of the semiconductor when heating is not limited and may be higher or lower.
- the present invention provides a treatment method characterized by having a step of removing alcohols and ketones generated by using plasma excited gas species and adhering to a semiconductor surface, and the same Is a semiconductor manufacturing apparatus using Gas species used for them Force is at least one of argon, krypton and xenon. Two or more of the above gases may be mixed.
- the gas pressure and the like can be appropriately selected and are not limited.
- the present invention provides a processing method characterized by using plasma generated by exciting gas species with electromagnetic waves in the plasma generation method, and a semiconductor manufacturing apparatus using the same. If the plasma has energy to excite the above gas species, More specifically, a microwave is preferable.
- the present invention relates to a treatment method characterized by heating a structure to be treated in a process using plasma for removing attached alcohols and ketones, and a semiconductor using the treatment method. It is a manufacturing device.
- the semiconductor temperature is preferably 400 ° C, but is not limited to that temperature.
- the present invention is a processing method characterized in that a part of a structure to be processed is covered with a semiconductor oxide layer, and a semiconductor manufacturing apparatus using the processing method. It is preferable to have a structure in which a part of the semiconductor that is not covered is covered with a semiconductor oxide layer. Specifically, for example, when silicon is used for the semiconductor, it is preferable to cover with a silicon oxide film U, . If the film here is an acid film! / It ’s a good thing!
- the present invention relates to a processing method and a semiconductor manufacturing apparatus using the processing method, characterized in that the processing liquid used in the processing step is collected and reused after purification.
- purification is a processing step. As long as it is a process for removing the generated impurities! /, It may be a good one! /, For example, an ion exchange resin.
- the hydrogen gas concentration is not limited as long as it is 4% or less.
- the present invention by treating the semiconductor surface with an aqueous solution containing at least one of alcohols and ketones, elution of semiconductor constituent atoms from the semiconductor surface is suppressed to 15 atomic layers Z 24 hours or less. be able to.
- the surface roughness of the processed semiconductor can be reduced to 0.1 lOnm or less from the surface roughness of about 1 Onm obtained by RCA cleaning, which is a conventional technique. Therefore, the performance improvement of the semiconductor element can be expected.
- the characteristics of semiconductor elements such as natural oxide films can be obtained by filling the treatment atmosphere with an appropriate gas. There is an effect of suppressing the formation of a film that causes deterioration.
- the semiconductor surface is treated with an aqueous solution containing at least one kind of alcohols and ketones, there is a step of removing alcohols adhering to the semiconductor surface.
- an aqueous solution containing at least one kind of alcohols and ketones there is a step of removing alcohols adhering to the semiconductor surface.
- There is no problem with semiconductor manufacturing technology using alcohols and it does not cause deterioration of characteristics such as lowering of dielectric breakdown electrolysis due to remaining alcohol in the structure laminated on the semiconductor surface.
- plasma excited by microwaves similar treatment effects can be obtained at a lower temperature than conventional heat removal methods.
- the amount of alcohol used can be reduced by recovering the processing solution used for treating the semiconductor surface with an aqueous solution containing at least one kind of alcohol and reusing it after purification. Can be reduced.
- processing liquid, processing method, and semiconductor manufacturing apparatus of the semiconductor device of the present invention there are a processing liquid, a processing method, and a semiconductor manufacturing apparatus that realize a processing with less elution from the semiconductor surface and a clean and flat surface. can get.
- FIG. 1 is a process diagram of an RCA cleaning method.
- FIG. 2 is a gate oxide film forming process diagram shown in the first embodiment.
- FIG. 3 is a cross-sectional view of the semiconductor substrate at the processing stage of the gate oxide film formation step shown in the first embodiment.
- FIG. 4 is a gate oxide film forming process diagram shown in the second embodiment.
- FIG. 5 is a cross-sectional view of a semiconductor substrate at a processing stage in a gate oxide film formation step shown in the second embodiment.
- FIG. 6 is a process diagram having a process liquid recovery and purification mechanism shown in the third embodiment.
- FIG. 7 is a correlation diagram between the atomic elution amount and the alcohol concentration shown in Example 1 and Comparative Example 1.
- FIG. 8 is a correlation diagram between average line roughness and alcohol concentration shown in Example 1 and Comparative Example 1.
- FIG. 9 shows the state of alcohol desorption by the temperature programmed desorption method shown in Example 2 and Comparative Example 2.
- FIG. 10 is a correlation diagram between the atomic elution amount and the alcohol purity shown in Example 3. Explanation of symbols
- Embodiment 1 of the present invention provides a processing solution and a processing method by using an aqueous solution in which the amount of elution of atoms from a semiconductor substrate is 15 atomic layers or less in terms of Z24 hours when processing a semiconductor substrate. It is an improvement.
- these processing liquids, processing methods, and semiconductor manufacturing apparatuses using them will be described for semiconductor device manufacturing.
- the present invention can be applied to various processing sequences based on the characteristics of various processing solutions currently used in semiconductor manufacturing processes.
- Figure 1 shows one example of the RCA cleaning method that is a processing step.
- treatment by water rinsing is used as a rinsing step, and the present invention proposes an improved method of these water rinsing steps. Therefore, the present invention is not limited to a process using a specific water rinse, but can also be applied to pretreatment of gate oxide film formation, cleaning of contact holes, via holes, capacitors, and the like.
- the present invention is a thermal acid treatment generally adopted as an initial step of semiconductor device manufacturing such as DRAM (Dynamic Random Access Memory) manufacturing, so-called gate oxide film pre-processing. As an example, this will be described. This process is used as a variety of LSI manufacturing processes regardless of DRAM manufacturing.
- DRAM Dynamic Random Access Memory
- FIG. 2 shows an example of a gate oxide film forming process
- FIG. 3 shows a semiconductor substrate of a gate oxide film forming process. Sectional drawing of the processing stage is shown.
- a semiconductor substrate 1 made of a silicon single crystal shown in a) of Fig. 3 is prepared.
- silicon oxide film 2 and silicon nitride film 3 in b) of FIG. 3 are formed.
- the field oxide film 4 in c) of Fig. 3 is formed (step: S-3 in Fig. 2).
- the silicon nitride film 3 is etched, and the silicon oxide film 2 is also etched using an HF chemical (process: S— in FIG. 2). 4) Then, expose the silicon substrate surface in the gate region. Thereafter, the pre-acid film 5 shown in e) of FIG. 3 is formed (step: S-5 in FIG. 2), and the acid formed using the HF chemical solution as shown in f) of FIG. Etching the film (process: S-6 in Fig. 2). Thereafter, the gate oxide film 6 shown in g) of FIG. 3 is formed (step: S-7 in FIG. 2).
- the present invention includes cleaning of the semiconductor substrate in the above process (S-1 in FIG. 2), etching of the gate region oxide film by field oxide film etching (S-4 in FIG. 2), It can be used for rinsing processes such as oxide film etching (S-6 in Fig. 2).
- S-1 in FIG. 2 etching of the gate region oxide film by field oxide film etching
- S-4 in FIG. 2 It can be used for rinsing processes such as oxide film etching (S-6 in Fig. 2).
- oxide film etching S-6 in Fig. 2
- the performance of semiconductor devices can be improved. As shown in the figure, it is known that the improvement of the flatness at the interface between the gate oxide film and the silicon substrate greatly improves the performance of the manufactured semiconductor device.
- an alcohol or ketone adhering to the semiconductor surface is treated after using an aqueous solution containing at least one of alcohols and ketones. It has the process of removing a kind.
- a treatment method in which a treatment with a treatment liquid containing at least one kind of alcohols and ketones and a subsequent step of removing the alcohols and ketones are applied, and A form of a semiconductor manufacturing apparatus will be described.
- alcohols and ketones used methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butyl alcohol 1, pentanol, 2-pentanol, acetone, jetyl ketone, ethyl methyl ketone, and the like.
- 1,3 fluoro-2-propanol or difluoromethyl ketone may be used as long as it satisfies the following conditions as alcohols and acetones.
- the following alcohols and ketones can be used as the treatment liquid.
- the alcohol has a structure of R1R2C (0H) R3.
- R1 represents a linear or branched C1-C4 alkyl group which may be substituted with a halogen or a hydroxyl group.
- R2 and R3 are the same as or different from R1, and represent a linear or branched C1-C4 alkyl group or a hydrogen atom which may be substituted with a halogen and a hydroxyl group.
- R5 is the same as or different from R4 and represents a linear or branched C1-C4 alkyl group or hydrogen atom which may be substituted with a halogen or a hydroxyl group.
- An aqueous solution containing at least one of these molecular structures is used.
- the water to be used is preferably V, which has a specific resistance value of 18 ⁇ ⁇ or more, or ultra-pure water!
- an aqueous solution containing at least one of an alkyl group having a structure of alcohols and ketones having a C1 to C7 alkyl group, a halogen atom, or a hetero atom may be used.
- the alcohol is preferably, for example, methyl alcohol, ethyl alcohol, 1 propanol, 1-butanol, 2-butanol and the like. More preferred is 2-propanol.
- it may be a polyhydric alcohol having two or more hydroxyl groups.
- the ketones are preferably ethylmethyl ketone, jetyl ketone, etc., and more preferably acetone. Alternatively, it may be partially substituted with a halogen atom such as fluorine.
- the alcohols and ketones used may be a mixture of two or more types, not just one type. For example, a combination of one kind from alcohol and one kind from ketone!
- the specific dielectric constant of alcohols and ketones used in the treatment liquid, the treatment method and the semiconductor manufacturing apparatus of the present invention is 82 or less, preferably specifically, methyl alcohol, ethyl alcohol, or jetyl ketone. More preferably, 2-propanol, acetone Etc.
- alcohols of the present invention 2-propanol is preferably used, and alcohols and ketones may be further mixed.
- Preferable examples include methyl alcohol, ethyl alcohol, jetyl ketone, and acetone.
- FIG. 4 shows an example of a gate oxide film forming process using the present invention
- FIG. 5 shows a cross-sectional view of a semiconductor substrate processing stage in the gate oxide film forming process.
- a silicon semiconductor substrate 1 is prepared, and a field oxide film 4 is already selectively formed on this substrate.
- the pre-acid film 5 shown in b) of Fig. 5 was formed (step: S-1 in Fig. 4 1) and formed using HF chemical solution as shown in c) of Fig. 5 Etch the oxide film (process: S-12 in Fig. 4).
- FIG. 5 shows a cross-sectional view of a semiconductor substrate processing stage in the gate oxide film forming process.
- the removal process in S-13 in FIG. 4 is exemplified by heating in an oxygen gas atmosphere, it is possible to heat only the semiconductor surface, but the treatment atmosphere is preferably filled with oxygen gas. Specifically, for example, the semiconductor structure to be processed is heated to 450 ° C.
- the temperature and oxygen gas concentration of the semiconductor when heating is not limited, and may be higher or lower.
- the plasma treatment is particularly limited to a parallel plate type or the like depending on the plasma generation method, and the substrate surface can be uniformly irradiated by exciting the gas species with electromagnetic waves. .
- the plasma has energy for exciting the above gas species.
- the plasma is preferably microwave.
- the temperature of the semiconductor device is preferably 400 ° C. U, 1S It is not limited to that temperature.
- the gas species for exciting the plasma is a rare gas, preferably Xenon, krypton, argon and the like.
- the gas type damage to the semiconductor substrate can be reduced by using a gas type with a large collision cross section.
- xenon is preferred. Two or more of the above gases may be mixed.
- the gas pressure and the like can be appropriately selected and are not limited.
- the semiconductor device to be treated which are not irradiated with plasma, specifically, for example, the back surface of a silicon substrate, and the like. It is preferable to cover the film by previously forming a silicon oxide film.
- the film here may be any film as long as it is an acid film.
- the extent of the plasma caused by the excited gas! / ⁇ The structure in which a part of the semiconductor is covered with a semiconductor oxide layer facilitates the removal of alcohols and ketones. Can be suppressed
- Embodiment 3 the removal of alcohols and ketones can reduce organic impurities at the interface between the gate oxide film and the silicon substrate, and can suppress the deterioration of the performance of the manufactured semiconductor device.
- Embodiment 3 is a processing method characterized in that the processing liquid used in the processing step is collected and reused after purification, and the semiconductor manufacturing process is accompanied by a mechanism for them. Explain the state.
- FIG. 6 shows a schematic diagram of a processing step having the above processing liquid recovery and purification mechanism.
- Figures 1 to 4 show part of the semiconductor manufacturing process.
- the processing solution used in 3 in FIG. 6 is recovered to the purification step 6 in FIG. After the recovery, the composition is adjusted to a composition suitable for the next step in the rinsing solution adjusting step 5 in FIG. 6 and reused.
- the purpose of purification is to remove impurities, and for particulate impurities, ultrafiltration, reverse permeable membranes, or the like can be used. Metal impurities can be removed by using an appropriate ion exchange resin. It is possible to collect and reuse from multiple rinsing steps in a series of semiconductor manufacturing processes that are not limited to the collection source and the reuse process. Distillation is appropriate for the purification of alcohols and ketones.
- Embodiment 4 of the present invention is a processing method and a semiconductor manufacturing apparatus characterized by suppressing the oxygen gas concentration in the atmosphere of the semiconductor processing step, and the embodiment will be described.
- the semiconductor manufacturing process it is preferable to perform from the substrate cleaning to the completion of the semiconductor element in an atmosphere in which the oxygen gas concentration is suppressed.
- the oxygen gas concentration is 20 ppm or less, more preferably 5 ppm or less
- the main gas species occupying the other part is nitrogen.
- the main gas species may be a mixture of nitrogen and hydrogen, and the hydrogen gas concentration is not limited as long as it is 4% or less.
- a manufacturing method of the semiconductor device in the semiconductor manufacturing apparatus there is no particular limitation other than a manufacturing method that deviates from the idea in semiconductor manufacturing, and it is limited to a processing method such as a batch type or a single wafer type. It ’s not something. It is preferable to use a semiconductor manufacturing apparatus capable of single-wafer processing with superior processing uniformity.
- Example 1 is an example in which a solution obtained by adding 10 to 60% by mass of isopropanol to ultrapure water was used as a treatment liquid.
- isopropanol is used as the alcohol and ketone, but it goes without saying that the alcohol and ketone can be arbitrarily selected from the alcohols and ketones within the range shown in the above-described embodiment.
- the semiconductor substrate used for processing was RCA-cleaned in advance. The cleaned semiconductor substrate is immersed in a nitrogen atmosphere for 24 hours, after which the semiconductor substrate is taken out and the amount of semiconductor atoms dissolved in the processing solution and the surface roughness are measured.
- ICP-AES Inductively coupled plasma atomic emission spectrometry
- Ra Average line roughness
- the semiconductor substrate used for the treatment was previously cleaned.
- the cleaned semiconductor substrate is immersed in a nitrogen atmosphere for 24 hours, then the semiconductor substrate is taken out, and the amount of semiconductor atoms dissolved is investigated by using inductively coupled plasma emission spectrometry (ICP-AES). More dissolved amounts were compared using units of atomic layer Z24hr.
- the surface roughness was evaluated using an atomic force microscope manufactured by Seiko Insurumen, and Ra was calculated from the observation results.
- FIG. 7 shows the amount of semiconductor atoms dissolved in the treated liquid after treatment
- Figure 8 shows the surface roughness measurement results.
- the alcohol concentration of 0% by mass in each figure corresponds to the result of Comparative Example 1. From these figures, the effect is obtained by setting the alcohols and ketones to 5% by mass or more, preferably 10% by mass or more, and more preferably 30% by mass.
- the atomic elution amount is 15 atomic weights Z24 hours or less
- the surface roughness is a semiconductor average line roughness (Ra) of 0.15 or less.
- the semiconductor average line roughness (Ra) is preferably 0.1 nm or less, more preferably 0.07 nm or less.
- a semiconductor single crystal specifically, for example, silicon can be given as a semiconductor material.
- Examples of crystal dependence in silicon include plane orientations (100) and (110). These are almost the same results, and there are no restrictions on the plane orientation of the single crystals to be processed, such as (100), (111), (110), etc.
- the present invention can also be applied to surfaces that are appropriately turned off with respect to their plane orientations.
- a semiconductor polycrystal specifically, for example, a semiconductor polycrystal
- the present invention can be applied to amorphous semiconductors and semiconductor compounds.
- the semiconductor compound is, for example, gallium arsenide.
- Example 2 is an example in which a solution obtained by adding 30% by mass of 2-propanol to ultrapure water was used as a treatment liquid, and an alcohol removal step was further performed.
- 2-pronool is used as the alcohol and ketone.
- the semiconductor substrate used for processing was RCA cleaned in advance. The cleaned semiconductor substrate was immersed in the cleaning solution for 10 minutes, and then the substrate was treated under conditions where plasma was generated by xenon gas to remove the attached alcohol. Evaluation after treatment was performed by temperature-programmed desorption analysis, and desorption was deduced using atmospheric pressure ionization mass spectrometry.
- Comparative Example 2 a solution obtained by adding 30% by mass of 2-propanol to ultrapure water was used as a treatment liquid.
- the semiconductor substrate used for processing was RCA cleaned in advance.
- the cleaned semiconductor substrate was immersed in the cleaning solution for 10 minutes.
- the post-treatment evaluation was performed by temperature-programmed desorption spectroscopy, and the desorption was analyzed using atmospheric pressure ionization mass spectrometry.
- Comparative Example 2 is a sample that does not perform the plasma treatment that is the alcohol removal step in Example 2.
- Example 2 The results of Example 2 and Comparative Example 2 are shown in FIG.
- the vertical axis represents the relative strength of the mass analyzer, and the horizontal axis represents the substrate temperature.
- mass number 43 in mass spectrometry is predominantly recognized as a signal caused by the alcohol, so Fig. 9 shows the intensity of the mass number 43 signal.
- Fig. 9 shows the intensity of the mass number 43 signal.
- a signal due to 2-propanol appeared from 250 ° C to 500 ° C, whereas the plasma treatment of Example 2 was performed.
- these signals are not observed and are therefore according to the invention.
- the attached alcohols can be removed by treatment using plasma.
- Example 3 is an example carried out using a solution obtained by adding 30% by mass of 2-propanol in ultrapure water as a treatment liquid and using different purity.
- the semiconductor substrate used for processing was pre-cleaned.
- the cleaned semiconductor substrate was immersed in a nitrogen atmosphere for 24 hours, and then the semiconductor substrate was taken out, and the amount of semiconductor atoms dissolved in the processing solution and the surface roughness were measured.
- ICP-AES Inductively coupled plasma atomic emission spectrometry
- FIG. 10 shows the relationship between the purity of 2-propanol and the elution amount of semiconductor atoms.
- the amount of elution increased due to the decrease in purity.
- a catalytic effect due to impurities can be considered, and the treatment with a small amount of semiconductor atom elution in the present invention can be achieved by increasing the purity of the alcohol used. Therefore, the purity of alcohols and ketones is 99% by mass or more, and preferably 99.9% by mass or more.
- the total amount of metal impurities is preferably 0.1 lppm or less, more preferably lppb or less.
- Example 4 a solution obtained by adding 30% by mass of 2-propanol to ultrapure water was used as the treatment liquid, and the treatment atmosphere gas was filled with normal air and nitrogen gas, and the oxygen gas concentration was 5 ppm or less. This is an embodiment performed under the control.
- the semiconductor substrate used for the treatment was previously cleaned. The cleaned semiconductor substrate was immersed in a nitrogen atmosphere for 24 hours, the latter half of the conductor substrate was taken out, and the amount of semiconductor atoms dissolved in the processing solution was measured.
- ICP-AES Inductively coupled plasma atomic emission spectrometry
- Table 1 shows the relationship between the type of processing atmosphere and the elution amount of semiconductor atoms.
- the number of atoms to be eluted can be further reduced by reducing the oxygen gas concentration in the processing atmosphere.
- an aqueous solution containing at least one of alcohols and ketones in an environment filled with nitrogen gas, etc., it is possible to reduce the number of elution atoms, which leads to improved semiconductor performance. is there.
- the treatment solution of the present application is an aqueous solution containing alcohols and ketones, but contains at least one of hydrochloric acid, nitric acid, sulfuric acid, acetic acid, hydrofluoric acid, and ammonium fluoride. It can also be used as a treatment liquid. Furthermore, one or more of nitrogen, hydrogen, oxygen, and ozone can be dissolved in the water used for the treatment liquid. For example, dissolved hydrogen gas lppb and the like are dissolved.
- a device is obtained. Problems with semiconductor devices due to the roughness of the semiconductor surface, which are not currently evident, are expected to become apparent as devices become smaller in the future. In the future, it can be used for the realization of highly reliable and high performance semiconductor devices in the manufacture of semiconductor devices with further miniaturized devices.
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Abstract
Description
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Priority Applications (4)
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CN2005800219709A CN1981368B (zh) | 2004-07-16 | 2005-07-11 | 半导体装置的处理液及处理方法 |
US11/631,671 US20070227567A1 (en) | 2004-07-16 | 2005-07-11 | Processing Liquid and Processing Method for Semiconductor Device, and Semiconductor Manufacturing Apparatus |
JP2006529042A JPWO2006009003A1 (ja) | 2004-07-16 | 2005-07-11 | 半導体装置の処理液、処理方法および半導体製造装置 |
EP05757755A EP1780778A4 (en) | 2004-07-16 | 2005-07-11 | DEVELOPER FLUID FOR A SEMICONDUCTOR COMPONENT, DEVELOPMENT METHOD AND DEVICE FOR PRODUCING SEMICONDUCTORS |
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US (1) | US20070227567A1 (ja) |
EP (1) | EP1780778A4 (ja) |
JP (1) | JPWO2006009003A1 (ja) |
KR (1) | KR100882167B1 (ja) |
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WO2009128392A1 (ja) | 2008-04-17 | 2009-10-22 | 国立大学法人東北大学 | 半導体装置の製造方法および半導体基板の洗浄方法 |
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JP6326387B2 (ja) * | 2015-03-19 | 2018-05-16 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
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- 2005-07-11 CN CN2005800219709A patent/CN1981368B/zh not_active Expired - Fee Related
- 2005-07-11 KR KR1020077000401A patent/KR100882167B1/ko active IP Right Grant
- 2005-07-11 WO PCT/JP2005/012784 patent/WO2006009003A1/ja active Application Filing
- 2005-07-11 JP JP2006529042A patent/JPWO2006009003A1/ja active Pending
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Also Published As
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CN1981368A (zh) | 2007-06-13 |
JPWO2006009003A1 (ja) | 2008-05-01 |
TW200610047A (en) | 2006-03-16 |
EP1780778A1 (en) | 2007-05-02 |
EP1780778A4 (en) | 2009-06-03 |
TWI322467B (en) | 2010-03-21 |
KR100882167B1 (ko) | 2009-02-06 |
CN1981368B (zh) | 2011-08-17 |
US20070227567A1 (en) | 2007-10-04 |
KR20070013360A (ko) | 2007-01-30 |
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