WO2006006681A1 - ガラス光導波路 - Google Patents
ガラス光導波路 Download PDFInfo
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- WO2006006681A1 WO2006006681A1 PCT/JP2005/013084 JP2005013084W WO2006006681A1 WO 2006006681 A1 WO2006006681 A1 WO 2006006681A1 JP 2005013084 W JP2005013084 W JP 2005013084W WO 2006006681 A1 WO2006006681 A1 WO 2006006681A1
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- glass
- core
- film
- optical waveguide
- waveguide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
Definitions
- the present invention relates to a glass optical waveguide.
- a quartz glass-based glass waveguide As a glass waveguide, a quartz glass-based glass waveguide is generally known.
- a dry etching technique is used, and patterning is usually performed using a resist or a metal film as a mask. That is, dry etching is performed using a resist pattern formed by an unnecessary resist removal process by applying a resist on a quartz glass film to be finely processed, pattern exposure, and development as it is as a mask.
- the metal film is dry-etched using the resist as a mask, and dry etching is performed using this as a mask for etching the quartz glass film.
- FIG. 3 is a conceptual cross-sectional view showing a conventional method of manufacturing an optical path, which will be described using this.
- the quartz glass film is dry-etched using the metal film as a mask.
- a base cladding film 12 is first formed on a substrate 11 made of quartz glass or Si, and then a core film 13 having a thickness of 5 to 10 111 and having a quartz glass force is formed on the base cladding film 12 (FIG. 3 ( a)).
- a metal film 14 is formed on the core film 13 (FIG. 3 (b))
- a resist 15 is uniformly applied thereon
- the core circuit pattern is exposed on the resist 15 using a mask aligner, and developed.
- a resist pattern to which the circuit pattern is transferred is generated (Fig. 3 (c)).
- the resist pattern As a mask, the metal film 14 is dry-etched by reactive ion etching as shown in FIG. 3 (d) to form a metal mask pattern, and the resist is removed (FIG. 3 (e)). Next, the core film 13 is etched using the metal mask pattern as a mask (FIG. 3 (f)), and then the metal mask pattern is removed (FIG. 3 (g)), and the upper cladding film 16 is covered on the core. As a result, an optical waveguide is fabricated (Fig. 3 (h)).
- FIG. 2 is an enlarged view of the periphery of the core in the silica glass waveguide of FIG. 3, and is a schematic cross-sectional view of the optical waveguide.
- 21 is a core
- 22 is a cladding
- 22a is a base cladding film
- 22b is an upper cladding film
- 23 is a substrate.
- the cross-sectional shape of the core is usually rectangular, preferably square. This is due to the following reasons.
- the causes of optical loss in the waveguide are the coupling loss at the input and output ends of light and the propagation loss of the waveguide itself.
- the loss of the waveguide itself is caused by the loss of the film itself, the roughness of the core sidewall after etching, the structural design of the waveguide, etc., and is not related to the cross-sectional shape of the core. In contrast, the loss at the joint is closely related to the cross-sectional shape of the core.
- the light propagation mode (hereinafter referred to simply as “light propagation mode”) in the input / output device such as the input fiber and the waveguide mode overlap, and the loss is Although it is small, the loss increases when the overlap is small. Since the mode in the input / output element is usually circular, the waveguide mode is also designed to be circular. If the waveguide has a square shape, the mode becomes circular, so the coupling loss force is small. For the above reasons, the core shape of a normal glass waveguide is often rectangular.
- Patent Document 2 Japanese Patent Laid-Open No. 2003-4958
- Er-added glass used for optical amplification cores of optical waveguides such as Bi-O glass, Bi-O, S
- glass films containing a total of 35% or more by fraction display (hereinafter referred to as glass films containing BiO, etc.)
- the present invention has been made to solve the above-mentioned problems, and is an optical waveguide including a core and a clad having a glass force formed on a flat substrate, and is used as a glass-constituting oxide of the core.
- One or more selected from the group consisting of BiO, SbO, PbO, SnO and TeO forces are selected from the group consisting of BiO, SbO, PbO, SnO and TeO forces.
- the cross-sectional shape of the core is a trapezoid having a long side on the substrate side, and the long side and two oblique sides of the four sides constituting the trapezoid
- a glass optical waveguide characterized in that the angle formed by each of them is in the range of 60 to 80 °.
- the present invention provides the above glass film containing Bi 2 O, that is, Bi 2 O, Sb 2 O 3
- the side wall of the pattern is not smoothed by dry etching for the glass film containing a total of 35% or more in the display, and this solves the problem and the interface between the core and the cladding when used as a waveguide Propagation loss due to scattering of signal light at can be suppressed.
- the glass-constituting oxide of the clad may be BiO, SbO, PbO, SnO.
- the above-described glass optical waveguide in which the value obtained by dividing the refractive index difference by the refractive index of the core is in the range of 0.0003 force to 0.1.
- a low-loss optical waveguide capable of single mode propagation in a communication wavelength band centered on 1.55 m can be obtained. If the value obtained by dividing the above is less than 0.0003, the difference in refractive index between the core and the clad becomes too small, and there is a possibility that light cannot be sufficiently confined in the core. On the other hand, when the value obtained by dividing exceeds 0.1, there are cases where the number of modes that can propagate in the waveguide is not a single mode but a multimode waveguide.
- the present invention provides a method for producing a glass optical waveguide, wherein the core of the glass optical waveguide is formed by a dry etching method.
- the core is formed by dry etching to remove deposits around the side wall of the core and smooth the side wall.
- the core glass-constituting oxide contains Bi O in a mass percentage of 35% in total.
- the above-mentioned glass optical waveguide which is a glass-constituting oxide contained as described above, is provided.
- the present invention provides the above-described glass optical waveguide containing at least one of the glassy oxidative strength Er and Tm of the core.
- an optical amplification waveguide containing at least one of Er and Tm can be provided.
- the glass component of the core is made up of 35% to 90% Bi O in terms of mass percentage, S
- Both 2 2 3 2 3 2 3 2 3 have a composition consisting essentially of 0 ⁇ 01 to 10%, Yb O force ⁇ ) to 10%
- an optical amplification waveguide in the wavelength band of 0.4 to 2 / ⁇ ⁇ can be provided.
- the present invention provides the above-mentioned glass optical waveguide containing at least one selected from the group consisting of core glass constituent oxide forces Er, Tm, Yb and Ho.
- this configuration can provide an optical amplification waveguide that can be used as a laser medium having a wavelength band corresponding to the laser active ions to be contained.
- the present invention also provides an optical amplifying waveguide for optical communication and an optical waveguide type laser medium comprising the glass optical waveguide.
- An optical waveguide with a low propagation loss can be obtained with a core made of a glass material containing at least 35% of one or more kinds of oxides selected in terms of mass in terms of mass percentage.
- the glass optical waveguide of the present invention is suitable for an optical amplification waveguide, a nonlinear optical waveguide, etc. in a wavelength band of 0.4-2 ⁇ m, for example, signal light of C band (1530-1565 nm), etc. ,
- FIG. 1 is an enlarged cross-sectional view of the vicinity of a core of an optical waveguide according to the present invention.
- FIG. 2 An enlarged cross-sectional view of the vicinity of the core of a general optical waveguide.
- FIG. 3 is a view showing a general method for manufacturing an optical waveguide.
- FIG. 4 is a graph of amplification characteristics of an optical amplification waveguide using a glass optical waveguide according to the present invention.
- FIG. 5 is a schematic sectional view of a laser resonator using an optical waveguide according to the present invention as an optical waveguide type laser medium.
- the glass for performing microfabrication in the present invention may be a glass film formed by various methods on a substrate! / A glass substrate itself.
- the substrate has a Young's modulus of 50 GPa or more for the following reason.
- the Young's modulus of the substrate is lower than 50 GPa, when stress is generated in the film formed on the substrate, the stress causes the substrate to be warped or deformed, and the waveguide shape tends to deviate from the design value. It is.
- Such substances with Young's modulus of 50 GPa or more include crystals such as Si, GaAs, Al 2 O, MgO, and sapphire, quartz glass, soda lime silica glass, and no Al
- Examples of the glass include potash glass and plasma display glass.
- the material of the substrate is not limited to the material strength described above, but in the process of annealing the core glass film or forming other elements on the same substrate during a series of processes. If a high-temperature treatment process is involved, such as when high temperatures are required, it is necessary to withstand this process.
- the shape of the substrate in the present invention is not limited, but the surface on which the glass thin film is formed is usually a flat surface. Also, the size and shape of the board is usually 2mm X 10mm ⁇ 200m respectively A rectangular substrate of m X 200 mm, a circular substrate with a diameter of 50 to 205 mm, and a thickness of 0.3 to 2 mm. The thickness of the glass film is usually 3 to 70 m, but is not limited to this.
- the glass film is formed on the substrate by, for example, physical vapor condensation (PVD) or chemical vapor condensation (CVD).
- PVD physical vapor condensation
- CVD chemical vapor condensation
- physical vapor condensation methods include sputtering, laser ablation, electron beam evaporation, and vacuum evaporation.
- chemical vapor condensation include plasma CVD and MOCVD.
- the target is prepared by, for example, preparing powders of constituent oxides at a desired composition ratio, dry-mixing them with a laminating machine, melting them in an electric furnace heated to 1150 ° C, and then stainless steel plates The material poured out is processed into a desired thickness and external dimensions, and bonded to the knocking plate using indium. Further, instead of melting in an electric furnace, a mixture of oxide powders or a crushed glass melted in an electric furnace may be sintered and molded by a method such as hot pressing.
- the glass film that is microfabricated in the present invention that is, the core glass component oxide is Bi 2 O, S
- the composition is preferably 10%, Tm O 0 to 10%, Yb O 0 to 10%. Also,
- Other components may be contained in a total range of 25% or less, preferably 15% or less.
- BiO, SbO, PbO, SnO and TeO are components for increasing the refractive index
- the optical gain or nonlinearity decreases. Further, the total is preferably 90% or less. If it exceeds 90%, vitrification may occur.
- the waveguide of the present invention is applied to an optical amplification waveguide, a nonlinear optical waveguide, etc., it is preferable that 35 to 90% of BiO is contained as the core glass constituting oxide. Bi O content is less than 35%
- the optical gain or nonlinearity decreases. More preferably, it is 40% or more, and particularly preferably 60% or more. If the amount of BiO exceeds 90%, it will become vitrified.
- SiO is not essential, it is preferable to contain it in order to improve glass stability.
- the content of is preferably 2-40%. If the content is less than 2%, the effect of stabilizing the glass is small, more preferably 3% or more. Refractive index for SiO power over 0%
- the optical amplification factor or the non-linearity may be reduced.
- GaO is not essential, but it is preferable because it can improve the devitrification resistance of the glass.
- Ga O may be included up to 55% to increase thermal stability.
- the waveguide is made by dry etching.
- the smoothness of the side walls is lowered, and the loss of the waveguide may be increased, so 25% or less is preferable.
- the glass optical waveguide of the present invention is used as an optical amplification waveguide, it is preferable to contain 5% or more of Ga 2 O because the wavelength range for gain can be increased.
- Al 2 O is not essential, but may be contained up to 50% in order to enhance thermal stability.
- the Al 2 O content is preferably 5% or less.
- the content is more preferably 0.01 to 5%, and still more preferably 0.1 to 2%. It is preferable that the glassy oxide of the core contains either Er or Tm. In particular, when constituting an optical amplifier, it is preferable to contain either Er or Tm.
- Yb O is not essential, but to suppress concentration quenching, or Er 2 O or Tm
- the amount of Yb 2 O is more preferably 0.1-5%.
- composition of the core glass film of the optical amplification waveguide is typically 35 to 90% BiO and 2 SiO.
- the composition consists essentially of 0%, Yb O force ⁇ ⁇ 10%. More preferably, Bi O force 0 to
- composition consists essentially of 0.01 to 10% and YbO force ⁇ ) to 10%. Also other
- the components may be contained in a total range of 25% or less, preferably 15% or less.
- the core glass film of the optical amplification waveguide contains 0.5% or more of La 2 O in addition to the above composition.
- Crystals are not precipitated in the glass or glass film of the present invention. That is, no diffraction peak is observed in the X-ray diffraction pattern.
- the patterning of the glass film is performed by dry etching.
- the patterning mask is formed on the glass film using a film having an alloying force of W and Si.
- a sputtering method is preferably used.
- Other film forming methods can also be used.
- a resist film is formed on the mask film by a spin coating method or the like, and a desired pattern is exposed and developed by irradiating ultraviolet rays to form a desired pattern on the resist film.
- the mask film is patterned by dry etching, and then the resist film is removed by dry etching (ashing treatment) using oxygen gas or wet removal using a stripping solution or the like. A mask formed in a pattern is obtained.
- the composition of the mask film is 25 to 65% in terms of atomic% of W with respect to the total atoms of W and Si.
- the selectivity that is, the etching rate ratio between the glass film and the mask film is small, so that the amount of wear that the mask film is etched during patterning of the glass film is large. Become. Therefore, it is necessary to increase the thickness of the mask film, which may cause a problem that it takes a long time to form the mask film and the material cost increases due to the thick film.
- the selection ratio is preferably 2 or more, more preferably 2.5 or more.
- the purity of the target used is preferably 99.5% or more. This is because if an element that is difficult to dry-etch as impurities is contained, the glass patterning may not be smooth and as designed. More preferably, it is 99.9% or more.
- the mask film formation by sputtering is preferably performed in an argon gas, but there is no problem as long as it is in an inert gas.
- an acidic gas is mixed, the alloy is oxidized, and when the glass film is dry-etched, the mask film is etched, wear increases, and a desired selection ratio may not be obtained.
- the purity of the gas used is preferably 99.995% or more, more preferably ⁇ 99.999% o
- the film forming pressure is preferably 0.2 to: LOPa. If the pressure is less than 2 Pa, the plasma tends to become unstable, or the film stress may increase and the film may easily peel off. The If it exceeds lOPa, the film quality deteriorates, and the above-mentioned wear of the mask film increases, and the desired selectivity may not be obtained.
- DC sputtering is preferred over RF sputtering! This is because DC sputtering is less prone to film peeling.
- input power density power applied to the target size
- 2. 5 ⁇ 7WZcm 2 is preferred. If the input power density is less than 2.5 WZcm 2 , the time required to obtain the desired film thickness becomes very long and may not be practical. If it exceeds 7 WZcm 2 , abnormal discharge is likely to occur, and pinholes are generated in the mask film, which may cause a patterning defect.
- the substrate temperature when forming the mask film is preferably in the range from room temperature (25 ° C) to 300 ° C. If the substrate is heated to more than 300 ° C, film peeling may occur during the cooling process.
- the thickness of the mask film is inevitably determined by the processing depth and selectivity of the glass to be dry-etched, but if the mask film thickness is less than 0.1 ⁇ m, the glass film is being dry-etched. In addition, patterning defects are likely to occur due to accelerated wear due to etching of the mask material, which is easily affected by heating by plasma. In addition, if the mask film thickness exceeds 3 m, the resist pattern necessary for patterning the mask film becomes too thick, and patterning as designed may become difficult. Therefore, the thickness of the mask film is preferably 0.1-3 / ⁇ ⁇ .
- the mask film is dry-etched by CI, CF, CHF, C F, C F, NF, SF
- ICP etching Reactive Ion Beam Ethcing
- NLD etching Magnetic Neutral Loop Discharge etching
- Desired patterning is performed on the glass film or glass by subsequent dry etching.
- the glass film or glass is etched by NLD etching, CF, CHF, C
- the fluoride gas for the total flow rate of fluoride gas and Ar gas The flow rate ratio of the gas is preferably 5-22% force S. If the flow rate ratio of fluoride gas is larger than 22%, the number of particles increases, which may increase light scattering when used as an optical waveguide, or decrease the dry etching rate. On the other hand, if the flow rate ratio is less than 5%, streaky roughness is generated on the dry-etched side surface, which may cause light scattering when used as an optical waveguide.
- Examples of dry etching conditions for the glass or glass film include the following.
- the equipment used was a plasma etching equipment NLD500 manufactured by ULVAC, Inc., and the flow rates of Ar gas and CF gas were 45 cm 3 / min and 5c, respectively, in terms of standard conditions.
- Fig. 1 shows an enlarged cross-sectional view of the vicinity of the glass optical waveguide core of the present invention.
- 31 is a core
- 32 is a cladding
- 32a is a base cladding film
- 32b is an upper cladding film
- 33 is a substrate.
- the core cross-sectional shape after etching is a trapezoid.
- the reason for making a trapezoid with a rectangular shape is as follows. Bi O of the present invention
- a glass or glass film containing a constituent oxide generates a volatile low-temperature reactant by dry etching. For this reason, etching that physically scrapes using Ar ions is performed in parallel with reactive ion etching. During etching, glass etching and reaction product deposition on the core sidewalls occur repeatedly.
- the core shape is trapezoidal, even if the reaction product adheres to the core side wall, physical etching with Ar ions is possible, so a smooth side wall is obtained, but the core shape is warped like a rectangle. If the structure is adopted, the reaction product adhering to the core side wall cannot be physically removed, and the pattern side wall is not smoothed.
- the trapezoidal shape is more preferably in the range of 65 to 76 °, more preferably the angle A and B of the long side and the two diagonal sides of the trapezoid are both in the range of 60 to 80 °. is there.
- angles A and B exceed 80 °, the reaction product of the components constituting the glass film and the etching gas attached to the core side wall cannot be removed, and smooth etching may not be possible. Below 60 °, the connection with the input / output element The combined loss may increase.
- the core As a method for forming the core, there is a press method in addition to the dry etching method.
- the core is processed by heating to a temperature at which the substrate is deformed and pressing the substrate with a mold. For this reason, there is a problem that the substrate is warped or stress is applied.
- the base clad and core are formed on the substrate and then press-molded, an uneven shape can be obtained, but the pressed core film remains on the side of the core, so that the refractive index structure of the core and clad is complicated. This is not sufficient as a waveguide.
- the dry etching method eliminates the problems of substrate deformation and warpage, and the core film is removed by etching except for the portion left as the core. Therefore, the structure of the core and the cladding should be simple. it can. Since the angles A and B are both in the range of 60-80 °, the reaction product of the components of the glass film, which is a deposit around the side wall of the core, and the etching gas Objects are sufficiently removed, and extremely smooth side walls can be obtained.
- the mask film is removed by dry etching using a chlorine-based or fluoride-based gas. Dry etching can be performed by reactive ion etching, reactive ion beam etching, ICP etching, NLD etching, etc., and chlorine, fluorides such as CI, CF, CHF, C F, C F, NF, and SF.
- Oxygen may be added to the etching gas.
- a glass film containing BiO or the like is put on the pattern.
- a glass optical amplification waveguide used for WDM optical communication can be formed.
- signal light having a wavelength of 1.45 to 1.64 m, for example, propagating in the core glass in the presence of excitation light is amplified.
- the optical waveguide formed by the microfabrication method of the present invention is not limited to this.
- the optical waveguide may be applied to the formation of a nonlinear optical waveguide. The following describes the formation of an optical amplification waveguide.
- the refractive index n of the glass film serving as the core is preferably 1.7 or more. This is because the above-described optical amplification by glass is caused by stimulated emission of light of the signal light wavelength, which is induced by excitation light, and has a large refractive index and a large force gain coefficient. If the refractive index is less than 1.7, the optical gain or nonlinearity may decrease. More preferably, n is 1. 8 or more, usually 2.3 or less.
- the refractive index in this specification shall mean the refractive index in the wavelength band which uses the optical waveguide of this invention.
- the clad is not particularly limited as long as it can confine light in the core, but the refractive index n of the clad is 0 when the refractive index difference n ⁇ n between the core and the clad is ⁇ . . 0003
- ⁇ / ⁇ 0.1 is satisfied. If the difference between the refractive index of the core and the clad divided by the refractive index of the core, that is, ⁇ is less than 0.0003, it may be difficult to confine light in the core. For this reason, the light spreads as it propagates, and a large loss occurs at the output end in connection with the output element (for example, single mode fiber for output). Also, when fabricating a bent waveguide (a waveguide having a curved portion), if the propagating light is not confined in the waveguide, a part of the propagating light is radiated by bending, resulting in a propagation loss. May increase. ⁇ is 0.0003 or more, more preferably 0.001 or more, and particularly preferably 0.003 or more.
- ⁇ 0 ⁇ exceeds 0.1, it is difficult to propagate light in a single mode, and there may be a multimode.
- these modes have different propagation speeds (group velocities) in the axial direction for each mode, so even if they propagate the same length, the arrival time at the output end differs depending on the mode, and the optical power Is dispersed. If the dispersion is large, the pulse shape will be lost when a high-speed pulse signal is sent, making it indistinguishable from the previous and next pulses. For this reason, high-speed transmission may not be possible.
- ⁇ / ⁇ is 0.1 or less, more preferably 0.08 or less, and particularly preferably 0.05 or less.
- the cladding is composed of Er 2 O and Tm 2 O
- composition range is in the same range as the composition range except for the saddle point which does not contain any deviation. If the composition range is different between the core and the clad, the glass transition point, expansion coefficient, soft point, etc. will be different, so thermal stress will occur during the heating and cooling process, and film peeling may occur during the waveguide fabrication process. Residual stress may occur.
- the clad is not limited to the composition range as long as the thermal properties are not significantly different and the refractive index can be adjusted within the range.
- the core is formed on the base cladding, and after the core is finely processed by the method of the present invention, the upper cladding is formed thereon.
- Core and cladding thickness The thickness should be 0.3 to 10 m and 2 to 60 m, respectively, preferably S.
- the thickness of the base cladding is 1 to 30 ⁇ m
- the thickness of the upper cladding is 1 to 30 ⁇ m. m, but is not limited to the above range.
- the method for forming the base cladding film and the top cladding film various methods mentioned in the method for forming the core glass film can be applied.
- the number of components is 4 or 5 or more.
- Sputtering method is preferred because it is a glass film.
- a first film to be a base cladding film (corresponding to the glass thin film 32a in FIG. 1) is first formed by sputtering, and then a core (corresponding to the core 31 in FIG. 1) is formed. ) Is formed.
- a target whose composition is adjusted so as to obtain a desired film composition is used.
- an upper cladding film described later may be formed on the core as a protective film.
- the thickness is preferably 25 to: LOOOnm.
- the dry etching time may increase significantly because the thickness of the core film and protective film etched by dry etching increases. If the thickness of the protective film is less than 25 nm, the effect may not be sufficiently obtained when it is necessary to protect the core film from damage.
- a mask film having an alloying force between W and Si is formed on the second film or the protective film.
- a sputtering method is preferably used as a method for forming a mask film that also has an alloying force between W and Si. Subsequently, a resist film is formed on the mask film using a spin coating method, and a desired pattern is formed on the resist film by irradiating and developing ultraviolet rays using a photomask having a desired pattern. The mask film is dry-etched using this pattern, and finally the mask formed in a desired pattern is obtained through dry etching using oxygen gas or removal of the resist film with a stripping solution.
- the second film is dry-etched in the same manner as the glass film etching described above to form a desired core pattern.
- the protective film is also dry-etched together to perform patterning.
- etching is performed until it enters not only the core film formed for the core but also the underlying cladding formed under the core film.
- etching is performed from the protective film until it enters the underlying cladding through the core film.
- the undercoating amount of the undercladding is 2 m or less. Etching more than 2 ⁇ ⁇ is not preferable because the thickness of the upper cladding for covering the core becomes unnecessarily thick.
- the mask film is removed by the dry etching method in the same manner as the etching of the glass film described above, and the upper cladding film (corresponding to the glass thin film 32b in FIG. 1) is further obtained by using the sputtering method.
- the ball treatment may be performed in an oxygen atmosphere.
- the glass optical waveguide of the present invention containing at least one of Er and Tm as the glass-constituting oxide of the core can be used as a laser medium for laser oscillation.
- the glass optical waveguide of the present invention used as a laser medium (hereinafter referred to as the optical waveguide type laser medium of the present invention) is used.
- a Fabry-Perot type resonator configuration in which mirrors with high reflectivity with respect to light that oscillates the laser is formed on both end faces can be used, but other configurations can be applied. It is also possible.
- an external light source force excitation light is incident on one end face (hereinafter this end face is referred to as an excitation light input end face), and the optical waveguide laser medium of the present invention is used.
- At least one of Er and Tm contained in the core of the core acts as a laser active ion, receives excitation light, emits light, oscillates, and oscillates to the other end face (hereinafter referred to as a laser light output end face! ) Is taken out of the laser beam.
- the mirror formed on the excitation light input end face is preferable because the higher the reflectance with respect to the oscillation light, the easier it is to oscillate.
- This reflectance is preferably 90% or more, more preferably 99% or more It is.
- it is preferable to increase the transmittance with respect to the excitation light because the excitation energy input to the laser medium can be increased by reducing the loss of excitation light due to reflection.
- This transmittance is preferably 99% or more, more preferably 99.5% or more.
- the mirror formed on the laser light output end face typically has a reflectance of 40% or more for oscillation light, but is preferably optimally adjusted depending on the gain of the laser medium.
- Such a mirror is made of SiO as a low refractive index layer material and TaO as a high refractive index layer material.
- a dielectric multilayer film in which the thickness of each layer is designed and laminated so as to obtain the above optical characteristics with respect to the light source wavelength and the laser oscillation wavelength of the excitation light is preferably exemplified. It is not limited to this.
- excitation light from the excitation light source to the optical waveguide it may be collected by a lens or the like from a spatial output excitation light source or input by a fiber using a fiber output type excitation light source. There is no particular limitation on inputting to the waveguide.
- composition containing preferably 35% or more of BiO expressed in terms of mass percentage
- the above-mentioned mirror is made to be a mirror having a high transmittance with respect to light with a wavelength of 980 nm and a desired reflectance with respect to light with a wavelength of 1530 nm. If the 980 nm wavelength band is used as the excitation light, oscillation light with a wavelength of 1530 nm can be obtained. Examples of the light source that emits the excitation light include semiconductor laser light having an oscillation wavelength of 980 nm. When Tm ions are used as laser active ions instead of Er ions, laser light with a wavelength of 1800 nm can be obtained by setting the wavelength of the excitation light to 800 nm.
- the optical characteristics of the mirror are matched to the excitation light wavelength and oscillation light wavelength used.
- Yb ions are used instead of the aforementioned Er ions and Tm ions as laser active ions
- laser oscillation in the 1060 nm band is emitted using a 980 nm band emitted from a semiconductor laser as excitation light, and excitation occurs when Ho ions are used.
- l lOOnm band light emitted from Raman-Fiber laser or Yb fiber laser as light
- 2000nm band and 3000nm band laser oscillation is performed respectively.
- a laser beam having a wavelength can be obtained.
- the glass optical waveguide of the present invention is used as a laser medium for lasing, the above-mentioned Bi 2 O, SiO, Ga 2 O, Al 2 O, Yb as the glass constituting oxide of the core.
- the contained glass composition is used. Further, Yb and Ho may be contained instead of Er and Tm. That is, an oxide of an element selected from the group consisting of Er, Tm, Yb, and Ho may be contained alone or in combination of two or more.
- the content of Er, Tm, Yb, and Ho (the total content when two or more are contained simultaneously) is preferably 0.01 to 10%. In order to perform laser oscillation with sufficient intensity, the content is set to 0.0 1% or more. If it exceeds 10%, it becomes vitrified, so 10% or less is preferable. On the other hand, if it exceeds 5%, concentration quenching occurs and the optical amplification factor tends to decrease, so that the content is more preferably 0.01 to 5%. More preferably, it is 0.1 to 2%.
- the core glass film used as a laser medium for laser oscillation contains, in addition to the above-mentioned composition, 0.5% or more of La 2 O, Er ions and Tm ions that are laser active.
- La O is 5
- composition shown in mass percentage in Table 1 is a powdered reagent manufactured by High Purity Chemical Laboratory Co., Ltd. Bi O (purity 99.999%, particle size 20 / ⁇ ⁇ ), SiO (purity 99.9%, particle size 4 m ), Ga O (pure
- the mixture was mixed and melted in an electric furnace heated to 1150 ° C., and then poured onto a stainless steel plate to obtain a glass having a diameter of 101.6 mm.
- the obtained glass was ground to a thickness of 3 mm, and then bonded to a backing plate for a notch using indium as an adhesive, thereby producing sputtering targets T1 and T2.
- a glass film formed using this target is patterned by dry etching, A waveguide was fabricated and evaluated.
- Examples 1, 2, 5, and 6 are examples, and examples 3 and 4 are comparative examples.
- a base clad film 12 having a thickness of 6.6 m was formed on a soda lime silica glass circular substrate 11 (thickness 1 mm, diameter 76.2 mm).
- the substrate temperature is 20 ° C
- argon and oxygen are used as sputtering gases in standard conditions
- the flow rates are 30 cm 3 Z min, 0.5 cm 3 Z min
- the pressure is 0.3 Pa
- the input high frequency power is Sputtering was performed under the conditions of 100 W and sputtering time of 66 hours.
- a core film 13 having a thickness of 3.3 ⁇ m was formed on the base cladding film. That is, using a T1 target, the substrate temperature is 20 ° C, argon and oxygen are used as sputtering gases, with a flow rate of 30 cm 3 Z min, 0.75 cm 3 Z min, pressure of 0.3 Pa, input high frequency Sputtering was performed under the conditions of electric power of 100 W and sputtering time of 21 hours.
- a protective film (a film serving as an upper cladding) was formed to 300 nm on the core film 13. That is, using a T2 target, the substrate temperature is 20 ° C., and argon and oxygen as sputtering gases are converted into the standard state, respectively, the flow rates are 30 cm 3 Z min, 0.5 cm 3 Z min, the pressure is 0.3 Pa, and the input high frequency power is Sputtering is performed under conditions of 100 W and sputtering time of 3 hours. [0081] Next, a 1.3 ⁇ m thick mask film 14 was formed using a W Si target having a diameter of 101.6 mm.
- sputtering was performed under the conditions of a substrate temperature of 20 ° C., argon as a sputtering gas at a flow rate of 10 cm 3 Z in terms of a standard state, a pressure of 2 Pa, an input DC power of 300 W, and a sputtering time of 100 minutes.
- a 2.4 ⁇ m-thick positive resist film was formed on the mask film 14 by spin coating.
- the positive resist film is calcined on a 96 ° C hot plate, and then irradiated with UV light having a wavelength of 436 nm using a mask aligner, and a width of 3 to 8 / ⁇ ⁇ and a length of 50 to 76 mm are formed on the positive resist film.
- a pattern in which 30 linear core patterns were formed at a pitch of 125 ⁇ m was formed.
- the UV-irradiated portion of the positive resist film was removed with a developer, and then dry etching was performed using an ICP etching apparatus NE550 (manufactured by ULVAC, Inc.). The dry etching has a flow rate of CHF gas and SF gas of 25 cm 3 Z min.
- Patterning of the mask film 14 was performed for 9 minutes under the condition of C.
- ashing was performed with the above-described ICP etching apparatus under the following conditions. That is, ashing is performed for 5 minutes under the conditions of a substrate temperature of 20 ° C, oxygen as an ashing gas in a standard state of 20 cm 3 Z min, pressure lPa, antenna power 300 W, noise power 10 W, and the resist is removed. did.
- dry etching was performed using a magnetic neutral line discharge plasma etching apparatus NLD500 to pattern the core glass film.
- the dry etching was performed in a mixed gas stream in which fluoride gas was added to Ar gas at a flow rate ratio of 10%. That is, the flow of Ar gas and C F gas
- Each 3 8 weight 45cm 3 / min calculated in the standard state was set to 5 cm 3 / min.
- the pressure is 0.2 Pa
- the discharge power is antenna power 1200 W
- the current of three neutral magnetic field generating coils in the longitudinal direction of the chamber is 10 A, 16.7 A, 10 A
- substrate temperature from the top The degree was 25 ° C.
- the dry etching treatment was performed for 10 minutes under the above conditions. After that, remove the sample and set the Si substrate on the equipment.
- the flow rates of O gas and CF gas are 100cm 3 Z min and 5cm respectively.
- the metal mask was removed by the above-described ICP etching apparatus under the following conditions.
- the mask film was removed for 4 minutes under the condition of 20W and substrate temperature of 20 ° C.
- an overlying cladding film having a thickness of 6.6 ⁇ m was formed on the concavo-convex processed glass.
- the substrate temperature is 20 ° C
- argon and oxygen are used as sputtering gases, with a flow rate of 30 cm 3 Z min, 0.5 cm 3 Z min, and a pressure of 0.3 Pa.
- Sputtering was performed under the conditions that the input high frequency power was 100 W and the sputtering time was 66 hours.
- the prepared straight waveguide is set in the vacuum chamber, and the pressure is maintained at 0.2 torr while flowing oxygen gas at a flow rate of 5 cm 3 Z in terms of standard conditions, and the temperature rise rate is 5 ° CZ. After heating to 500 ° C and holding for 3 hours, a heat treatment was performed to cool at a temperature drop rate of 5 ° CZ. At this time, the refractive indexes of the core film and the clad film were 1.921 and 1.911, respectively. After the obtained waveguide was cut with a dicing apparatus, the end surface was polished and mirror-finished. As a result of changing the length of the waveguide and measuring the loss in each waveguide, the loss of the waveguide itself was 0.2 dB / cm.
- a base clad film 12 having a thickness of 8.4 m was formed on a soda lime silica glass circular substrate 11 (thickness 1 mm, diameter 76.2 mm). That is, using a T2 target, the substrate temperature is 20 ° C, argon and oxygen are used as sputtering gases in standard conditions, and the flow rates are 30 cm 3 Z min, 0.75 cm 3 Z min, the pressure is 0.3 Pa, and the input high frequency power is 100W, spatter Sputtering was performed under the conditions of 60 hours. When X-ray diffraction measurement was performed on the glass film formed on the substrate, no peak was observed in the diffraction pattern, and it was confirmed that the glass film was amorphous.
- a core film 13 having a thickness of 3.3 ⁇ m was formed on the base cladding film. That is, using a T2 target, the substrate temperature is 20 ° C, argon and oxygen are used as sputtering gases, respectively, with a flow rate of 30 cm 3 Z min, 0.5 cm 3 Z min, pressure of 0.3 Pa, input height Sputtering was performed at a frequency power of 100 W and a sputtering time of 35 hours.
- the amount of Bi O in mass percentage display is
- a protective film (film serving as an upper cladding) was formed to 300 nm on the core film 13. That is, using a T2 target, the substrate temperature is 20 ° C., and argon and oxygen are used as sputtering gases in terms of standard conditions, respectively, the flow rates are 30 cm 3 Z min, 0.75 cm 3 Z min, the pressure is 0.3 Pa, and the input high frequency power is Sputtering was performed under the conditions of 100 W and sputtering time of 2 hours and 10 minutes.
- a mask film 14 having a thickness of 1.3 ⁇ m is formed using a W Si target having a diameter of 101.6 mm.
- sputtering was performed under the conditions of a substrate temperature of 20 ° C., argon as a sputtering gas at a flow rate of 10 cm 3 Z in terms of a standard state, a pressure of 2 Pa, an input DC power of 300 W, and a sputtering time of 100 minutes.
- a 2.4 ⁇ m-thick positive resist film was formed on the mask film 14 using a spin coating method.
- the positive resist film is calcined on a 96 ° C hot plate, and then irradiated with UV light having a wavelength of 436 nm using a mask aligner. A pattern in which 30 linear core patterns were formed at a pitch of 125 ⁇ m was formed.
- the UV-irradiated portion of the positive resist film was removed with a developer, and then dry etching was performed using an ICP etching apparatus NE550 (manufactured by ULVAC, Inc.). The dry etching has a CHF gas and SF gas flow rates of 25 cm in terms of standard conditions.
- Patterning of the mask film 14 was performed for 9 minutes under the conditions of 3 6 3 Z, 5 cm 3 Z, pressure 0.5 Pa, antenna power 800 W, bias power 20 W, and substrate temperature 20 ° C.
- ashing was performed with the above-described ICP etching apparatus under the following conditions. That is, ashing is performed for 5 minutes under the conditions of a substrate temperature of 20 ° C, oxygen as an ashing gas in a standard state of 20 cm 3 Z min, pressure lPa, antenna power 300 W, noise power 10 W, and the resist is removed. did.
- dry etching was performed using a magnetic neutral discharge plasma etching apparatus NLD500 to pattern the core glass film.
- the dry etching was performed in a mixed gas stream in which fluoride gas was added to Ar gas at a flow rate ratio of 10%. That is, the flow of Ar gas and C F gas
- the shape of the core pattern not including the mask film 14 is 5.8 / ⁇ ⁇ , 7.5 / ⁇ ⁇ , 3. in the order of the upper side, the lower side, and the height (etching depth), as shown in FIG.
- the angles of A and B were both 71 °.
- the upper side, the lower side, and the height force S were 5.9 m, 7.5 m, and 3.3 m, respectively, and a core with a trapezoidal cross section in which the angles A and B in FIG.
- the mask film was removed for 5 minutes under the condition of 20W and substrate temperature of 20 ° C.
- an overlying cladding film having a thickness of 6.6 ⁇ m was formed on the concavo-convex processed glass.
- the substrate temperature is 20 ° C
- argon and oxygen are used as sputtering gases, with a flow rate of 30 cm 3 Z min, 0.75 cm 3 Z min, and a pressure of 0.3 Pa.
- Sputtering was performed under the conditions of an input high frequency power of 100 W and a sputtering time of 60 hours.
- the prepared straight waveguide was set in the vacuum chamber, and the pressure was maintained at 0.2 torr while flowing oxygen gas at a flow rate of 5 cm 3 Z in terms of standard conditions, and the heating rate was 5 ° CZ. After heating to 500 ° C and holding for 3 hours, a heat treatment was performed to cool at a temperature drop rate of 5 ° CZ. This The refractive indexes of the core film and the clad film were 1.915 and 1.899, respectively. After the obtained waveguide was cut with a dicing apparatus, the end surface was polished and mirror-finished. As a result of changing the length of the waveguide and measuring the loss in each waveguide, the loss of the waveguide itself was 0.2 dB / cm.
- Sputtering is performed using target T2 under the same conditions as in Example 2.
- a protective film for the base clad, core, and top clad is formed on the lime lime silica glass substrate, and a mask film with a thickness of 1. is used under the same conditions. Then, etching was performed under the same conditions as in Example 2 to perform mask patterning.
- the pressure is 0.2 Pa
- the discharge power is 1000 W for antenna power, 250 W for noise spars
- the current of three neutral magnetic field generating coils in the longitudinal direction of the chamber is 20 A from the top, 2 5.5 A, 20 A
- substrate The temperature was 25 ° C.
- the dry etching process was performed for 10 minutes under the above conditions.
- SEM observation of the core cross section after dry etching was performed it was confirmed that there were deposits around the side wall and the etched side surface was rough, which could cause light scattering.
- the shape of the core pattern not including the mask film 14 is 3.6 / ⁇ ⁇ , 4. O ⁇ m, 1. in the order of the upper side, the lower side, and the height (etching depth).
- the angles of A and B were both 84 °.
- the mask film was removed for 5 minutes under the condition of 20W and substrate temperature of 20 ° C.
- an overlying cladding film of 6.6 ⁇ m thickness was formed on the glass with the unevenness processed.
- the substrate temperature is 20 ° C
- argon and oxygen are used as sputtering gases, with a flow rate of 30 cm 3 Z min, 0.75 cm 3 Z min, and a pressure of 0.3 Pa.
- Sputtering was performed under the conditions of an input high frequency power of 100 W and a sputtering time of 60 hours.
- the prepared straight waveguide was set in the vacuum chamber, and the pressure was maintained at 0.2 torr while flowing oxygen gas at a flow rate of 5 cm 3 Z in terms of standard conditions, and the temperature rising rate was 5 ° CZ.
- the refractive indexes of the core film and the clad film were 1.915 and 1.899, respectively.
- the end surface was polished and mirror-finished. As a result of changing the length of the waveguide and measuring the loss in each waveguide, the loss of the waveguide itself was 3 dBZcm.
- Sputtering was performed under the same conditions as in Example 1 to form a protective film for the base cladding, core, and top cladding on the soda lime silica glass substrate, and a 1.3 m thick mask film was formed under the same conditions.
- Etching was performed under the same conditions as in Example 1, and the patterning of the mask was performed.
- the pressure is 0.4 Pa
- the discharge power is antenna power 1000 W
- the current of three neutral magnetic field generating coils in the longitudinal direction of the chamber is 10 A, 16.7 A, 10 A from the top
- the substrate temperature was set to 25 ° C.
- the dry etching process was performed for 10 minutes under the above conditions.
- SEM observation of the core cross section after dry etching was performed it was confirmed that there were deposits around the side wall and the etched side surface was rough, which could cause light scattering.
- the shape of the core pattern not including the mask film 14 is 6.1 m, 6.7 m, and 1.8 m in the order of the upper side, the lower side, and the height (etching depth).
- the angles of B and B were both 81 °.
- the mask film was removed for 5 minutes under the condition of 20W and substrate temperature of 20 ° C.
- an overlying cladding film of 6.6 ⁇ m thickness was formed on the concavo-convex processed glass.
- the substrate temperature was 20 ° C, and argon and oxygen were used as sputtering gases, with a flow rate of 30 cm 3 Z min, 0.5 cm 3 Z min, and a pressure of 0.3 cm, respectively.
- Sputtering was performed under the conditions of Pa, input high-frequency power of 100 W, and sputtering time of 66 hours.
- the prepared straight waveguide was set in the vacuum chamber, and the pressure was maintained at 0.2 torr while flowing oxygen gas at a flow rate of 5 cm 3 Z in terms of standard conditions, and the temperature rising rate was 5 ° CZ. After heating to 500 ° C and holding for 3 hours, a heat treatment was performed to cool at a temperature drop rate of 5 ° CZ. At this time, the refractive indexes of the core film and the clad film were 1.921 and 1.911, respectively. After the obtained waveguide was cut with a dicing apparatus, the end surface was polished and mirror-finished. As a result of changing the length of the waveguide and measuring the loss in each waveguide, the loss of the waveguide itself was 5 dBZcm.
- a glass thin film is formed on a soda-lime-silica glass circular substrate 11 (thickness 1 mm, diameter 76.2 mm) and patterned to produce a waveguide.
- a base cladding film 12 having a thickness of 7.2 / zm is formed by sputtering for 66 hours, and then a core film 13 having a thickness of 3.3 m is sputtered on the base cladding film for 20 hours and 15 minutes. Sputtering was performed for 3 hours to form a 300 nm-thick protective film (film for the upper cladding).
- These glass films formed on the substrate were confirmed to be amorphous by X-ray diffraction measurement.
- the conditions for forming the glass film were the same as those in Example 1 except that the gas flow rate during the core film formation was Ar 30 cm 3 Z and oxygen 0.5 cm 3 Z.
- the film formation rate at which the glass film is formed by sputtering changes depending on the target wear state, the film was formed with appropriate calibration.
- a mask film 14 is formed using a W Si target, and a width is formed using a positive resist film.
- a pattern in which 30 linear core patterns having a length of 5.0 m to 7.6 cm were formed with a pitch of 125 ⁇ m and patterning of the mask film 14 was performed in the same manner as in Example 1.
- the straight core has a smooth side surface with no deposit on the side wall, and the shape of the core pattern not including the mask film 14 is the top side, bottom side, and height.
- the angles of A and B in FIG. 1 were both 73 °.
- the upper side, the lower side, and the height are 3. O ⁇ m, 5. O ⁇ m, 3.
- Example 1 has a trapezoidal cross-section core of 73 °. It was made. Next, the metal mask was removed by ICP etching in the same manner as in Example 1, and then sputtered on the concavo-convex glass for 66 hours to form a 7.2 ⁇ m thick upper cladding film, which was then heat-treated. Each core pattern was cut and the end face was polished and mirror-finished to obtain the glass optical waveguide of this example.
- the refractive indexes of the core film and the clad film manufactured by the above steps were 1.942 and 1.913, respectively.
- the loss of the waveguide of the glass optical waveguide of this example at a wavelength of 1310 nm was 0.13 dBZcm.
- WDM fiber force plastics Two melt-stretched wavelength division multiplexing (WDM) fiber force plastics are prepared, and this WDM fiber force bra is coupled to both ends of the 6 cm long glass optical waveguide created in this example, and is bi-directionally excited.
- the optical system was constructed. That is, when pump light with a wavelength of 980 nm and power of 140 mW is input from an externally placed semiconductor laser diode to the pump light ports of the WDM fiber force braves coupled to both ends of the glass optical waveguide of this example In both cases, a signal interval of 2.5 nm and a wavelength range of 1520 to 1600 nm is input to the signal light port of one WDM fiber power bra, and a signal light of 100 dB is input to the other.
- the signal light output from the signal light port of the WDM fiber force bra was input to the optical spectrum analyzer and the signal light intensity was measured.
- the amplification characteristic can be evaluated by bi-directionally exciting the glass optical waveguide of this example.
- the signal light intensity SA measured at this time is corrected by the optical loss SB of the optical system other than the glass optical waveguide of the present example, which was measured with an optical spectrum analyzer. It is done.
- Figure 4 shows the net gain obtained in this way. A gain of about 8 dB is obtained at a wavelength of 1530 ⁇ m! /!
- a disk-shaped glass is formed by the same method as described above, and bonded to a sputtering backing plate to produce sputtering targets T3 and T4 that are the same as the above-described targets T1 and T2, respectively.
- the diameter of the glass that is formed by melting is 152.4 mm
- the thickness obtained by polishing 1 the resulting glass is 5 mm.
- a glass film is formed on a soda lime silica glass circular substrate 33 under the same method and conditions as in Example 1, and a waveguide is produced by patterning.
- the magnetic neutral discharge plasma etching apparatus NLD500 was used for dry etching, plasma treatment, and N gas vacuum break.
- the core glass film is patterned by a process of dry etching again to form a linear core pattern having a length of 2 cm.
- Sputtering times for forming the base clad film 32a, the core film 31, and the protective film as the upper clad are 38 hours, 13 hours 30 minutes, and 1 hour 45 minutes, respectively.
- the linear core formed in this way has sidewalls with no deposits on the periphery and smooth surface properties, and the core pattern not including the mask film 14 has an upper side, a lower side, a height (etching depth). ) In order, 2.8 / ⁇ ⁇ , 5.4 / ⁇ ⁇ , 4.
- the angles of A and B in FIG. 1 were both 73 °.
- the upper side, the lower side, and the height force S were 3. O ⁇ m, 5. O ⁇ m, and 3.3 m, respectively, and a core with a trapezoidal cross-section with the angles of A and B in Fig. 1 being 73 ° was formed. .
- a glass optical waveguide can be obtained by heat-treating the straight waveguide formed by the above steps while flowing oxygen gas in a vacuum chamber.
- the input high-frequency power is 280 W
- the standard-state converted flow rates of argon and oxygen, which are the sparking gases are the base clad film 12 and the upper clad film.
- the protective film and the upper clad film are formed, it is 120 cm 3 Z and 0.7 cm 3 Z, and when the core film 13 is formed, they are 200 cm 3 Z and 0.7 cm 3 Z. Conditions other than the above are the same as in Example 1.
- each glass film formed by the above steps was amorphous with no diffraction peak observed by X-ray diffraction measurement, and the amount of BiO in mass percentage display was 74.1%. is there.
- the refractive indices of the core film and the clad film obtained are 1.978 and 1.950, respectively, and the waveguide loss is 0.13 dBZcm.
- a Fabry-Perot resonator using the 2 cm long glass optical waveguide obtained in the above process as an optical waveguide type laser medium is fabricated.
- One end face of the obtained glass optical waveguide is used as an excitation light input end face, and the other end face is used as a laser single light exit end face.
- SiO is used as a low refractive index layer material, and a high refractive index layer material is used.
- a mirror made of a dielectric multilayer film using Ta 2 O as a material is formed by vapor deposition. At this time,
- the mirror 34 formed on the pumping light input end face has a transmittance of 99.5% for light with a wavelength of 980 nm used as pumping light and a reflectivity for light with a wavelength of 1530 nm for laser oscillation of 99%.
- the mirror 35 to be formed has a transmittance of 99.5% for light with a wavelength of 980 nm and a reflectance of 60% for light with a wavelength of 1530 nm.
- the excitation light 36 of the laser beam with power lOOmW is incident on the pumping light input end face of the resonator obtained in this way through a condensing lens using a semiconductor laser having an oscillation wavelength of 980 nm.
- the emission band of Er ions excited by the incident excitation light the light with a wavelength of 1530 nm reflected by the mirror provided at the input / output end is amplified in the optical waveguide laser medium, and is emitted from the laser light emission end face.
- the emitted light is laser light.
- the output light is made incident on a single-mode optical fiber by a condenser lens, guided to an optical spectrum analyzer, and the spectrum is measured. It is confirmed that only light of wavelength is output.
- the glass optical waveguide of the present invention is suitable for an optical amplification waveguide, a nonlinear optical waveguide, and the like in a wavelength band of 0.4 to 2 ⁇ m.
- the glass optical waveguide of the present invention can also be suitably used as a laser medium for laser oscillation.
- laser oscillation in the 1060 to 3000 nm band is possible. Can be performed.
- description and claims of Japanese patent application 2004-208658 filed on July 15, 2004 and Japanese Patent Application 2005-62532 filed March 7, 2005 The entire contents of the drawings and abstract are hereby incorporated by reference into the present specification.
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KR1020077001013A KR20070033432A (ko) | 2004-07-15 | 2005-07-14 | 유리 광도파로 |
CA002573840A CA2573840A1 (en) | 2004-07-15 | 2005-07-14 | Glass optical waveguide |
EP05760026A EP1767968A1 (en) | 2004-07-15 | 2005-07-14 | Glass light guide |
US11/622,829 US7369733B2 (en) | 2004-07-15 | 2007-01-12 | Glass optical waveguide |
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JP2004-208658 | 2004-07-15 | ||
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US11/622,829 Continuation US7369733B2 (en) | 2004-07-15 | 2007-01-12 | Glass optical waveguide |
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JP (1) | JP2006053522A (ja) |
KR (1) | KR20070033432A (ja) |
CA (1) | CA2573840A1 (ja) |
WO (1) | WO2006006681A1 (ja) |
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US10197292B2 (en) | 2009-06-09 | 2019-02-05 | Pcs Holding B.V. | Burner module for a cooker, a cooker or hob and method for manufacturing thereof |
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US9581760B2 (en) * | 2015-01-26 | 2017-02-28 | Advalue Photonics, Inc. | Rare-earth doped gain fibers |
US9812837B2 (en) | 2015-01-26 | 2017-11-07 | Advalue Photonics, Inc. | Ultrashort pulse fiber amplifier with rare-earth doped gain fibers |
US10468849B1 (en) * | 2018-11-30 | 2019-11-05 | Mcmaster University | Hybrid optical waveguides of tellurium-oxide-coated silicon nitride and methods of fabrication thereof |
US20220066092A1 (en) * | 2020-08-25 | 2022-03-03 | Rohm And Haas Electronic Materials Llc | Waveguide with trapezoidal core |
CN112629720B (zh) * | 2020-11-30 | 2022-08-09 | 中国航空工业集团公司北京长城计量测试技术研究所 | 一种低损耗光纤压力传感器及其制作方法 |
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US10197292B2 (en) | 2009-06-09 | 2019-02-05 | Pcs Holding B.V. | Burner module for a cooker, a cooker or hob and method for manufacturing thereof |
Also Published As
Publication number | Publication date |
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JP2006053522A (ja) | 2006-02-23 |
EP1767968A1 (en) | 2007-03-28 |
KR20070033432A (ko) | 2007-03-26 |
US20070165993A1 (en) | 2007-07-19 |
CA2573840A1 (en) | 2006-01-19 |
US7369733B2 (en) | 2008-05-06 |
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