WO2005071824A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- WO2005071824A1 WO2005071824A1 PCT/JP2004/000658 JP2004000658W WO2005071824A1 WO 2005071824 A1 WO2005071824 A1 WO 2005071824A1 JP 2004000658 W JP2004000658 W JP 2004000658W WO 2005071824 A1 WO2005071824 A1 WO 2005071824A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor device
- cooling
- temperature
- cooling medium
- internal combustion
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
Definitions
- the present invention relates to a semiconductor device, and more particularly, to a power adjustment semiconductor device such as an invar device used for driving a motor or the like.
- a semiconductor device equipped with a power device such as an inverter used for power conversion or the like is operated by air, water, or the like so that the temperature of the device becomes lower than the operating temperature of a device constituting the device during operation. It is cooled using.
- a conventional cooling structure for example, as described in Japanese Patent Application Laid-Open No. H10-75583, there is known a structure in which a cooler cools an upper surface and a lower surface of an inverter device. I have. Disclosure of the invention
- An object of the present invention is to provide a semiconductor device capable of extending the life of a mounted component.
- the present invention relates to a semiconductor device having a cooling system in which a temperature of a cooling refrigerant is controlled by a heating unit and a radiator, connected to the cooling system, and cooled.
- the change in temperature of the cooling medium caused by the change in the operating state of the semiconductor device. From ( ⁇ T 2), the range of temperature change ( ⁇ 1) controlled by the heating section and the radiator of the cooling system is larger ( ⁇ 1 ⁇ 2).
- the present invention provides a cooling system in which the temperature of a cooling refrigerant is controlled by a heating unit and a radiator, and the heating unit is connected to the cooling system.
- the present invention provides a vehicle including an internal combustion engine and an electric motor, wherein the electric motor is provided in a vehicle controlled by a power conversion device, wherein the cooler cools a cooling medium.
- the internal combustion engine or the internal combustion engine and the electric motor are cooled by a cooling medium that has cooled the power conversion device, and the internal combustion engine or the cooling medium that has cooled the internal combustion engine and the electric motor is cooled by the cooler.
- the cooling system is configured such that the temperature change width ( ⁇ 1) of the cooling medium controlled by the internal combustion engine and the cooler is the power change.
- the present invention is mounted on a vehicle equipped with an internal combustion engine and an electric motor, controls the driving of the electric motor by converting electric power supplied from a battery, and cools the electric motor.
- a cooling system arranged to cool the internal combustion engine with a cooling medium cooled by a heat exchanger, the power conversion device for a vehicle being arranged and cooled on the upstream side of the internal combustion engine, comprising: a container; A cooling passage through which a cooling medium flows, for converting power supplied from the battery, and a power conversion circuit module including a plurality of semiconductor elements; and controlling driving of the semiconductor elements.
- a conversion circuit control board composed of a plurality of electronic components.
- the container includes: the power conversion circuit module; For accommodating a conversion circuit control board, at least the power conversion circuit module.
- the change width ( ⁇ ⁇ 2) of the temperature of the cooling medium according to the change in the operating condition of the yule is smaller than the change width ( ⁇ 1) of the temperature of the cooling medium controlled by the internal combustion engine and the cooler. ( ⁇ ⁇ 2 ⁇ ⁇ ) 1) to suppress heat transfer from the outside. With such a configuration, the life of the mounted components can be prolonged.
- FIG. 1 is a system configuration diagram of a semiconductor device cooling system according to a first embodiment of the present invention.
- FIG. 2 is a pattern diagram showing a temperature change transition in the semiconductor device cooling system according to the first embodiment of the present invention.
- FIG. 3 is an explanatory diagram of the life of the semiconductor device cooling system according to the first embodiment of the present invention.
- FIG. 4 is an explanatory diagram of the temperature dependence of the coolant used in the cooling system of the semiconductor device according to the first embodiment of the present invention.
- FIG. 5 is a perspective view of a partial cross section showing the configuration of the semiconductor device according to the first embodiment of the present invention.
- FIG. 6 is a process chart showing an assembly process of the semiconductor device according to the first embodiment of the present invention.
- FIG. 7 is a process chart showing an assembly process of the semiconductor device according to the first embodiment of the present invention.
- FIG. 8 is a process chart showing an assembly process of the semiconductor device according to the first embodiment of the present invention.
- FIG. 9 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the second embodiment of the present invention.
- FIG. 10 is a plan view showing a temperature change transition in the semiconductor device cooling system according to the second embodiment of the present invention.
- FIG. 11 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the third embodiment of the present invention.
- FIG. 12 is a partial sectional view showing the configuration of the semiconductor device according to the fourth embodiment of the present invention. It is a perspective view.
- FIG. 13 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the fifth embodiment of the present invention.
- FIG. 14 is a block diagram showing a drive system of a hybrid electric vehicle which is one of electric vehicles using the vehicle output transmission device according to each embodiment of the present invention.
- FIG. 15 is a block diagram showing an electric vehicle system using the semiconductor device according to each embodiment of the present invention.
- FIG. 1 is a system configuration diagram of a semiconductor device cooling system according to a first embodiment of the present invention.
- the semiconductor device 100 has a pump 3 for flowing the medium through a pipe 11 for flowing a medium 9 for cooling, a radiator 2 for cooling the medium, and a semiconductor device 100 other than the semiconductor device 100. Connected to heating unit 1.
- the semiconductor device 100 includes a heat generating portion such as a power device inside the semiconductor device 100, and forms a first heating portion.
- the heating unit 1 is a second heating unit having a heating value Ql (Q 1> Q 2) larger than the heating value Q 2 of the semiconductor device 100 as the first heating unit.
- the radiator 2 and the pump 3 are adjusted so that the temperature of the heating unit 1 falls within a specific range.
- the capacity through which the cooling medium 9 passes is such that the capacity V1 of the heating unit 1 is sufficiently larger than the capacity V2 of the semiconductor device 100, and the temperature T of the cooling medium is the operation of the semiconductor device 100. It is hard to receive the temperature change due to
- the heating unit 1 is, for example, an automobile engine.
- the engine is the first heating unit
- the inverting device that controls the motor is the semiconductor device 100, which is the second heating unit.
- the motor is the first heating unit
- the inverting device that controls the motor is the semiconductor device 100, which is the second heating unit.
- the inverter device that controls the motor and the driving power source is a semiconductor device. It becomes 0 0, which is the second heating section.
- the casing of the semiconductor device 100 is provided with a flow path 4 for flowing a cooling medium, and the capacitor 6, the controller 7, the module mounted with the device 12, and the casing forming the S-force S flow path 4 It is attached to the inner wall.
- the housing of the semiconductor device is generally made of aluminum die cast, SUS, etc., but the heat dissipating part 5 for mounting the power device mounting module 12 is made of copper with high thermal conductivity and nickel plated. Heat from loss of electronic components constituting the semiconductor device is easily transmitted to the cooling medium.
- the cooling medium 9 flowing into the flow path 4 formed in the housing of the semiconductor device 100 branches the pipe for transporting the cooling medium, and flows into and out of the refrigerant inlet 1 OA and the drain provided in the semiconductor device.
- the cooling medium flows into the plurality of surfaces of the housing, and the power device mounting module 1 2, It can be used for cooling condenser 6, controller 7, etc.
- the flow path 4 is branched in the wall of the housing, and a cooling medium flows into a plurality of surfaces of the housing to be used for cooling the power device mounted module 12, the capacitor 6, the controller 7, and the like. Good thing.
- the cooling system used for the heating unit 1 of the internal combustion engine or the like is not one system, and even if the operating condition of the internal combustion engine changes, the temperature is controlled by switching a plurality of cooling systems so that the temperature takes into account the operating efficiency. Adjustable structures can also be used.
- the cooling medium flowing into the cooling flow path 4 of the semiconductor device 100 the medium whose temperature has been adjusted as described above is used, so that the temperature of the cooling medium is hardly affected by the operation of the semiconductor device.
- the temperature range is adjusted to an optimum temperature range for the operating state of the internal combustion engine. Therefore, since the housing of the semiconductor device 100 is provided with the flow path 4 through which the temperature-controlled medium passes with a small temperature change width, the semiconductor device 100 is refined.
- the temperature inside the housing on which the electronic components are mounted is almost the same as the temperature change range of the cooling medium.
- FIGS. 2 and 3 the effect of cooling by a temperature-controlled medium in a state where the temperature variation width is small, as in the cooling system of the semiconductor device according to the present embodiment, will be described.
- FIG. 2 is a pattern diagram showing a temperature change transition in the semiconductor device cooling system according to the first embodiment of the present invention.
- FIG. 3 is an explanatory diagram of a life in the cooling system of the semiconductor device according to the first embodiment of the present invention.
- dotted line B shows the temperature of the cooling water to which only the cooling system for invar overnight has been applied as in the past. That is, as in the present embodiment, there is a case where a cooling system for cooling only the semiconductor device alone is provided without having the first heating unit and the second heating unit.
- Solid line A shows the temperature inside the inverter when the cooling system for the inverter is applied in the conventional configuration.
- the cooling water temperature in the evening became higher than the temperature a ° C
- the cooling water heated by the radiating fan for lowering the cooling water temperature was cooled, and the cooling water temperature was reduced from a ° C to c ° C. It is adjusted to be within the range.
- the cooling water temperature changes according to the opening and closing of the accelerator, etc., and the operating condition of the inverter changes, and the cooling water is heated by the heat generated by the loss of the power module during the inverter.
- the cooling water temperature is adjusted and changes from a ° C to ct: as shown by ⁇ B.
- the cooling water temperature gradually decreases, and reaches the ambient temperature where the semiconductor device is installed at time t4.
- the ambient temperature at the start and the ambient temperature at the stop are the same for the sake of simplicity.
- the temperature change in the invertor is similar to the change in the cooling water temperature.
- the internal temperature increases.
- the operation was continued, and when the temperature of the cooling water in Inva overnight reached a temperature of a ° C or higher, the cooling water heated by the radiating fan for lowering the cooling water temperature was cooled, and the cooling water temperature changed from a ° C to c ° C. It is adjusted to be within the range.
- the heat generated by the loss of the microcomputer for controlling the inverter and the power capacitor at the same time as the operation of the inverter. The inside of the heater is warmed.
- the temperature inside the inverter during operation is higher than that of the cooling water and is repeated in the range of b ° C to d.
- the loss from the chamber disappears, and the temperature in the chamber gradually decreases as the cooling water temperature decreases, and reaches the ambient temperature at time t4.
- the temperature inside the inverter varies not only due to the change in the cooling water temperature but also due to the heat generated by the loss of the semiconductor and the like constituting the inverter.
- a dotted line C in FIG. 2 shows a change in the temperature of the cooling water for cooling, for example, an engine of an automobile having a large amount of heat generation
- a solid line D shows the cooling of the cooling water as in the present embodiment. It shows the temperature change within the night of Invar used as water.
- the relationship between the internal combustion engine and the cooling water capacity, cooling capacity, etc. is adjusted so that the cooling water for the internal combustion engine has a substantially constant temperature at high temperatures in consideration of the combustion efficiency of the internal combustion engine. Therefore, the cooling water temperature rises after the start and is adjusted within a temperature range from 6 ° ⁇ 0 after a certain time (time t 2).
- the invertor installed in the vehicle has a temperature cycle of d from the ambient temperature associated with the start and stop represented by the solid line A in the conventional structure, and d during operation. Subject to temperature cycling from ° C.
- a temperature cycle ranging from the environmental temperature due to the start and stop represented by the solid line D to g ° C and a temperature cycle from e ° C to g during operation are received. Will be. Therefore, in response to a change in the temperature of the cooling medium ( ⁇ 2) caused by a change in the operating state of the semiconductor device 100, the range of change ( ⁇ 1) in the temperature controlled by the heating unit and the radiator of the cooling system is as follows. ⁇ 1> ⁇ 2.
- ⁇ ⁇ - ⁇ ... (1)
- ⁇ and beta test environment, is a value determined by the material, .DELTA..tau is Repetition rate temperature range.
- the product life is determined by the sum of the life obtained from equation (1), which is the temperature change due to operation and shutdown, and the life obtained from equation (1), which is the temperature change due to the inverter operation during operation. Can be represented.
- Fig. 3 shows the result of calculating the relationship between the maximum temperature during operation and the life of components when the range of temperature change during operation is changed, based on equation (1).
- the service life is optional because it depends on the operating model.
- point A is the point where the temperature change during operation was 120 ° C at the maximum temperature of the components in the chamber during operation, and the temperature change during operation was 40 ° C.
- the point at which the temperature changes during operation was 40 ° C at the maximum temperature of 130 ° C for the interior parts of the Inver Evening during operation. If the maximum temperature of components inside the inverter during operation rises, the repetition of the temperature associated with starting and stopping increases, shortening the service life.
- Point (c) is the point where the maximum temperature of the components inside the inverter during operation was 120 ° C and the temperature change during operation was 30 ° C.
- Point 2 is that the maximum temperature of the parts inside the inverter during operation was 130 and the temperature change during operation was 20. Comparing the point mouth and point c, even if the maximum temperature of the parts inside the inverter during operation is the same as 120, the life change is improved by reducing the temperature change during operation from 40 to 30 That Understand.
- the present embodiment As described above, by reducing the influence of the loss of the components constituting the inverter as shown by the solid line D, the life in the inverter can be improved.
- FIG. 4 is an explanatory diagram of the temperature dependence of the coolant used in the cooling system of the semiconductor device according to the first embodiment of the present invention.
- water or water is mixed with one or more alcohols such as ethylene glycol, propylene glycol, butylene glycol, and, if necessary, thiazole, triazole,
- An antioxidant composed of phosphoric acid, carboxylic acid, or the like, an antioxidant, an antifoaming agent, or the like may be appropriately added, and may be used in the range of 70 to 100 ° C.
- Figure 4 shows the temperature dependence of the viscosity of water.
- arylecols can be used in a concentration range of about 20% to 50%, and the temperature change of viscosity at this time shows almost the same tendency as that of water. . Therefore, by setting the temperature of the cooling medium to 70 ° C. or more and less than 100 ° C., the viscosity of the cooling medium can be made substantially constant, and the change in the liquid speed of the cooling medium by the pump can be reduced. The temperature change due to the cooling medium during operation of the semiconductor device can be reduced. This makes it possible to further improve the reliability and life of the semiconductor device.
- FIG. 5 is a perspective view of a partial cross section showing the configuration of the semiconductor device according to the first embodiment of the present invention.
- the same reference numerals as those in FIG. 1 indicate the same parts.
- the semiconductor device 100 includes various electronic components 6, 7, 12 for exhibiting desired functions, and a housing 20 for housing the electronic components.
- the housing 20 includes a flow path 4 for flowing a cooling medium, an inlet / outlet 10 for entering / exiting a refrigerant, a signal input / output terminal 21 for controlling an electronic device, and a signal Input / output terminals 22 for the power and the like controlled by the power supply are provided. Since the signal input / output terminals 21 are connected by a connector, a cover or the like for connecting the connector is provided around the terminals. Also, since the input / output terminal 22 of the power controlled by the signal is generally used with a large voltage or current, a port nut for fixing the semiconductor device and the power wiring cable is used. Or use a hole for passing the port for fixing the power distribution cable.
- the semiconductor device 100 is cooled by a refrigerant that cools a heating portion of the engine or the like that generates a large amount of heat.
- the semiconductor device has a housing structure that is not easily affected by a change in temperature outside the semiconductor device 100. That is, the flow path 4 for the refrigerant is provided on all surfaces inside the wall surface of the housing 20.
- the housing 20 has a rectangular parallelepiped shape, a flow path 4 A formed on the upper surface of the housing 20, a flow path 4 B formed on the lower surface of the housing 20, and a housing A flow path 4C formed on the left side of the housing 20, a flow path 4D formed on the right side of the housing 20, a flow path 4E formed on a side surface in front of the housing 20,
- the flow path 4 may be finely divided inside the wall surface of the housing, or may be in a state of being spread over the entire surface inside the wall surface of the housing. Further, it is also possible to improve the cooling efficiency by providing fin-shaped irregularities inside the flow path 4 and increasing the surface area inside the flow path.
- the life of the semiconductor device 100 can be extended.
- the main components of the semiconductor device 100 which are electronic components with large losses, have a flow path 4 It is fixed to the inner wall of the formed housing.
- the capacitor 6 is fixed so as to be in contact with the inner wall of the housing 20 via a heat conductive paste (not shown) using a fixing jig 23 or the like, and the loss of the capacitor 6 during operation of the semiconductor device.
- the heat generated by the heat is transmitted to the cooling medium via the housing.
- the electronic components 7 such as microcomputers having a large loss are mounted on the substrate 24 in advance, and then connected via a heat conductive paste (not shown) or the like.
- a heat conductive paste not shown
- the radiator (fin) part of the electronic component By fixing to the inner wall of the housing 20 or fixing the radiator (fin) part of the electronic component to the inner wall of the housing 20, heat generated by the loss of the electronic component is cooled through the housing. Communicate to media.
- the module 12 with a high-loss power device is mounted with a power semiconductor element mounted on the electrode pattern of a substrate with high thermal conductivity, such as silicon nitride or aluminum nitride, using solder or the like.
- the electrodes are connected to the electrodes on the board using aluminum wire, etc., and this board is connected to a heat sink 5 made of copper, molybdenum, aluminum, etc. using solder or the like.
- the electronic component 25 with low loss (heat generation) is mounted on the substrate 27, and then the substrate 27 is fixed to the housing 20 via the spacer 26. It is not necessary to adopt a structure taking transmission into consideration, and it is also possible to fix the mounting board to the inner wall of the housing 20 like other electronic components having a large loss.
- the fixing of the electronic component and the board on which it is mounted to the inside of the housing is not necessarily limited to the upper and lower surfaces inside the housing, and can be adjusted according to the dimensions and loss amount of the electronic component. It can also be fixed to the side surface provided with the same method as described above.
- heat generated by the operation loss of the electronic components constituting the semiconductor device 100 can be transmitted from the housing to the radiator through the refrigerant, and the loss due to the loss of the electronic components constituting the semiconductor device 100
- the effect on the temperature inside the housing can be reduced, and the rise in temperature inside the housing can be suppressed.
- the temperature change is transmitted to the inside of the housing. It is possible to reduce the influence of ripening inside the housing due to loss of electronic components that make up the semiconductor device, so it is possible to reduce the temperature change inside the housing due to the operation of the semiconductor device and mount it. The reliability and life of electronic components can be improved.
- 6 to 8 are process diagrams showing the steps of assembling the semiconductor device according to the first embodiment of the present invention.
- the same reference numerals as in FIG. 5 indicate the same parts.
- the mounting body 20 is divided into two parts so that the semiconductor device components can be easily mounted.
- FIG. 6 shows an assembling process of a lower portion of the divided semiconductor device.
- the flow paths 4B, 4E, 4B, 4E which flow the cooling medium to the bottom surface (1 surface) and the [J surface (4 surfaces)] of the lower housing 20a in advance. 4 F is formed.
- the flow paths 4C and 4D on the left and right sides shown in FIG. 5 are not shown.
- the casing 20a is provided with cooling medium supply / discharge ports 10A and 10B and a connector 21 for guiding a control signal.
- the housing 20a is made of aluminum die-cast.
- a heat radiating section 5 is formed on the inner bottom of the housing 20a.
- the power device module 12 is fixed to a position above the heat radiating portion 5 of the housing 20a by a port or the like (not shown) via a thermal conductive grease (not shown).
- a spacer 26 for fixing a board on which low-loss components are mounted is mounted on the housing. Fix inside body 20a.
- the board 8 on which the components are mounted is mounted on a predetermined position of the spacer, and is fixed with the port 91 as shown in FIG. 6 (d).
- the wiring is performed with the chair module and the connector provided in the housing, and a part of the divided semiconductor device is formed.
- FIG. 7 shows an assembling process of an upper portion of the divided semiconductor device.
- an upper passage 4A for a cooling medium is formed in the upper housing 2Ob.
- the housing 20b is provided with supply / discharge rotors 1OA and 10B.
- the housing 20b is made of aluminum die-cast.
- a board 24 or a capacitor 6 on which a control electronic component 7 with a large loss is mounted in advance is mounted at a predetermined position inside the upper housing 20 b via a thermal conductive grease (not shown) or the like. .
- the board 24 on which the control electronic components 7 are mounted is fixed to the inner wall of the housing 20b using the port 91.
- the capacitor 6 is fixed to the housing 2 Ob using a fixing jig 23 to further improve the thermal conductivity to the housing 2 Ob, and the surface of the capacitor 6 that is not in contact with the housing. Also ensure heat conduction. After that, necessary wiring connections between the substrates are performed, and the upper portion of the divided semiconductor device shown in FIG. 7 (c) is formed.
- FIG. 8 shows an assembling step of combining the divided semiconductor devices manufactured in the steps shown in FIGS. 6 and 7 to obtain a desired semiconductor device. As shown in FIG. 8 (a), wiring for control signals, power and the like is performed between the divided semiconductor devices 20a and 2Ob, and then the openings of the semiconductor devices are combined.
- the divided portion is fixed with a port 92, and the semiconductor device 100 according to the present embodiment is completed.
- the assembled semiconductor device 100 and a pipe 11 for connecting a heater, a pump, a radiator, etc., through which a cooling medium whose temperature has been adjusted flows, are connected to the semiconductor device.
- a cooling system using the semiconductor device according to the present embodiment connected to the supply / discharge units 10A and 10B is obtained.
- the mounting method and order of each electronic component and the method of dividing the semiconductor device are not necessarily fixed to this method, and the semiconductor device can be assembled by another dividing method and mounting order. .
- the semiconductor device is also cooled by the cooling medium that cools the heating portion having a large heat capacity, so that the temperature change of the refrigerant is small and the life of the semiconductor device is prolonged. be able to.
- a cooling medium flow path is provided on each surface of the semiconductor device housing to make it less susceptible to changes in ambient temperature, so that temperature changes in the semiconductor device during operation can be reduced. Therefore, the reliability of the semiconductor device and the connection life of the mounted components can be improved.
- FIG. 9 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the second embodiment of the present invention.
- the same reference numerals as in FIG. 5 indicate the same parts.
- FIG. 10 is a pattern diagram showing a temperature change transition in the semiconductor device cooling system according to the second embodiment of the present invention.
- the same reference numerals as those in FIG. 2 indicate the same parts.
- a cooling plate (radiator) 5 is provided on the upper surface side of the coolant inflow passage 4, and the power semiconductor module 12 and the like are thermally transferred to the cooling plate 5.
- the board 24 on which the capacitor 6 and the control component 7 are mounted is fixed to the lower surface side of the flow path 4 via a heat conductive paste or the like.
- the substrate 24 on which the power semiconductor module 12, the capacitor 6, and the control component 7 are mounted is covered with a housing 31 made of a material having a low thermal conductivity.
- the cooling medium supply passage 4 is provided with a cooling medium supply / discharge port 10A.10B, and the temperature is controlled by the heating unit 1, the radiator 2, the pump 3, etc. shown in FIG. Cooling medium is supplied.
- Examples of the material having a low thermal conductivity used for the housing 31 include a foam material made of fine silica powder with both surfaces covered with aluminum or a stainless steel plate, or a resin such as phenol resin as a binder.
- a glass bottle sandwiched between aluminum or stainless steel plates, or polyphenylene sulfide, polyetherimide, polyetheretherketone, or the like can be used instead of these metal plates.
- the housing 31 constituting the housing is made of a material having a low thermal conductivity, the temperature inside the case is hardly affected by a temperature change outside the semiconductor device, and the temperature inside the cooling plate 5 is small. It is determined by the temperature of the cooling medium and the effect of heat on the inside of the housing due to the loss of mounted electronic components.
- the temperature inside the chamber is hard to fall to the ambient temperature h where the semiconductor device is installed between the start and stop and the next start and stop.
- the temperature at the start t6 can be set to i ° C higher than the h ° C, and the temperature change width accompanying the start / stop can be reduced.
- the heat due to the loss of the electronic components constituting the semiconductor device is transmitted to the radiator by the cooling medium flowing through the flow path formed in the cooling plate 5 on which these electronic components are mounted.
- the effect of heat due to loss of electronic components inside the housing can be reduced, and the temperature change inside the housing due to the operation of the semiconductor device can be reduced, thereby improving the reliability and life of the mounted electronic components. be able to.
- -As described above since the semiconductor device is also cooled by the cooling medium that cools the heating portion having a large heat capacity, the temperature change of the refrigerant is small, and the life of the semiconductor device is prolonged. can do.
- the configuration of the semiconductor device according to the third embodiment of the present invention will be described with reference to FIG.
- the configuration of the cooling system of the semiconductor device according to the present embodiment is the same as that shown in FIG.
- FIG. 11 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the third embodiment of the present invention.
- the same reference numerals as in FIG. 5 indicate the same parts.
- a flow path for flowing a cooling medium is provided on the upper surface and the lower surface of the housing of the semiconductor device 100B.
- the casings 32 on the left and right sides and the front and rear sides are made of a material having low thermal conductivity.
- the semiconductor device is also cooled by the cooling medium that cools the heating portion having a large heat capacity, the temperature change of the refrigerant is small, and the life of the semiconductor device can be prolonged.
- the upper and lower surfaces of the housing of the semiconductor device form a flow path for the cooling medium, and the other surface is made of a material having a low thermal conductivity, so that it is less affected by changes in the surrounding temperature.
- FIG. 12 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the fourth embodiment of the present invention.
- the same reference numerals as in FIG. 5 indicate the same parts.
- the semiconductor device 100 C of the present embodiment has a gap provided around the semiconductor device 100 shown in FIG. 1 and is covered with the housing 33, and a heat insulating layer 40 is provided in the gap. ing.
- Examples of the heat insulating layer 40 provided on the outer periphery of the semiconductor device include a foam material made of fine silica powder covered on both sides with aluminum or a stainless steel plate, or glass wool using a resin such as phenol resin as a binder. Those sandwiched between stainless steel plates can be used.
- the outside of the heat insulating layer is made of a heat-resistant and low-thermal-conductivity resin material such as polyphenylene sulfide, polyetherimide, polyetheretherketone, etc., so that the environmental temperature at which the semiconductor device is installed is reduced. Changes can be made more difficult.
- FIG. 13 is a partial cross-sectional perspective view showing the configuration of the semiconductor device according to the fifth embodiment of the present invention.
- the same reference numerals as in FIG. 5 indicate the same parts.
- the semiconductor device 100 D of the present embodiment is configured such that a heat storage layer 50 is provided around the semiconductor device 100 shown in FIG. It is a thing.
- a latent heat storage material such as sodium acetate hydrate and a hydrated salt heat storage material can be used.
- a resin material having heat resistance and low thermal conductivity such as polyphenylene sulfide, polyether imide, or polyether ether ketone.
- the heat storage layer 50 By mounting the heat storage layer 50 around the semiconductor device, during operation of the semiconductor device, heat from the cooling medium is absorbed and the heat storage material is melted, operation is stopped, and the temperature of the cooling medium drops. When it is produced, the heat storage material solidifies and releases latent heat during solidification, slowing down the temperature of the semiconductor device. That is, as shown in Fig. 10, since the temperature drop from t3 at the time of operation stop is gradual, the time until the next start is short, and the temperature of the semiconductor device is reduced before the temperature of the semiconductor device falls to the environmental temperature h ° C. If the next start is performed at time t 6, the semiconductor device will be started only when the temperature of the semiconductor device drops to i.
- the temperature change range from the start of the semiconductor device to the operation is from i to g ° C, and the temperature change range from the start to the operation when the heat storage layer is not provided around the semiconductor device is from h ° C.
- the temperature change range is narrower than g ° C.
- FIG. 14 is a block diagram showing a drive system of a hybrid electric vehicle which is one of electric vehicles using the vehicle output transmission device according to each embodiment of the present invention.
- the hybrid electric vehicle according to the present embodiment has a four-wheel drive system configured to drive front wheels WH-F by an engine EN and a motor / generator MG, which are internal combustion engines, and drive rear wheels WH-R by a motor M, respectively. belongs to.
- a case will be described in which the front wheel WH-F is driven by the engine EN and the motor generator MG, and the rear wheel WH-R is driven by the motor M.
- the engine EN and the motor generator The MG may drive the rear wheels WH-R
- the motor M may drive the front wheels WH-F.
- the engine EN, the radiator 2, the pump 3, and the semiconductor device 100 are connected by a flow path shown by a dotted line, and the semiconductor device 100 is cooled by the cooling water of the engine EN.
- a transmission TM is mechanically connected to a front wheel axle DS-F of the front wheels WH-F via a differential device (not shown).
- the transmission TM is controlled via an output control mechanism (not shown).
- the engine EN and the motor generator MG are mechanically connected.
- the output control mechanism (not shown) is responsible for synthesizing and distributing the rotational output.
- the AC winding of the semiconductor device 100 (10 OA, 100 B, 100 C, 100 D) described above is electrically connected to the stator winding of the motor generator MG.
- Inverter is a power converter that converts DC power into three-phase AC power, and controls the driving of motor-generator MG.
- Battery BA is electrically connected to the DC side of semiconductor device 100.
- a motor M is mechanically connected to the rear axles DS-R1, DS-R2 of the rear wheels WH-R.
- the AC side of the semiconductor device 100 is electrically connected to the stator winding of the motor M.
- the semiconductor device 100 is commonly used for the motor / generator MG and the motor of the motor M, and includes a conversion circuit section for the motor / generator MG, a conversion circuit section for the motor / generator M, and And a drive control unit for driving.
- the front wheels WH_F are driven by the motor / generator MG.
- the front wheels WH-F are driven by the motor / generator MG at the time of starting and low-speed running of the hybrid electric vehicle, but the front wheels WH-F are driven by the motor / generator MG.
- the rear wheels WH-R may be driven by the motor M (evening four-wheel drive may be used).
- DC power is supplied to the semiconductor device 100 from the battery BA. The supplied DC power is converted into three-phase AC power by the semiconductor device 100.
- the three-phase AC power obtained in this way is supplied to the stator winding of motor generator MG.
- the motor generator MG is driven to generate a rotation output.
- This rotation output is input to the transmission TM via an output control mechanism (not shown).
- the input rotation output is shifted by a transmission TM and input to a differential (not shown).
- the input rotation output is distributed to the left and right by a differential device ('not shown) and transmitted to the front wheel axle DSF on one of the front wheels WH_F and the front wheel axle DS-F on the other of the front wheels WH-F.
- the front wheels WH-F are driven by the rotation of the front wheel axle DS-F. Be moved.
- the front wheels WH-F are driven by the engine EN.
- the rotation output of the engine EN is input to the transmission TM via an output control mechanism (not shown).
- the input rotation output is shifted by the transmission TM.
- the speed-changed rotation output is transmitted to the front wheel axle DSF via a differential device (not shown).
- the front wheels WH-F are rotationally driven. If it is necessary to detect the state of charge of the battery BA and charge the battery BA, the rotational output of the engine EN is distributed to the motor generator MG through an output control mechanism (not shown), ⁇ Move the generator MG to rotate.
- the generator MG operates as a generator.
- three-phase AC power is generated in the stator winding of the motor generator MG.
- the generated three-phase AC power is converted into predetermined DC power by semiconductor device 100.
- the DC power obtained by this conversion is supplied to battery BA.
- the battery B A is charged.
- the rear wheels WH-R Drive When a hybrid electric vehicle is driven by four wheels (when driving on low roads such as snowy roads and the driving efficiency (fuel efficiency) of the engine EN is good), the rear wheels WH-R Drive. In addition, the front wheels WH-F are driven by the engine EN in the same manner as in the normal driving described above. Further, since the amount of charge in battery BA is reduced by driving motor M, motor generator MG is rotated by the output of engine EN to charge battery BA in the same manner as in the normal running described above. To drive the rear wheels WH-R by the motor M, the semiconductor device 100 is supplied with DC power from the battery BA. The supplied DC power is converted into three-phase AC power by the semiconductor device 100INV, and the AC power obtained by this conversion is supplied to the stator winding of the motor M.
- the motor M is driven to generate a rotation output.
- the generated rotational output is distributed to the left and right, and transmitted to the rear axle DS-R1 on one of the rear wheels WH-R and the rear axle DS-R2 on the other of the rear wheels WH-R.
- the rear wheels WH-R are rotationally driven by the rotational driving of the rear axles DS-R1 and DS-R2.
- the front wheels WH-F are driven by the engine EN and the motor generator MG. In this embodiment, the case where the front wheel WH-F is driven by the engine EN and the motor generator MG during acceleration of the hybrid electric vehicle will be described.
- the front wheel is driven by the engine EN and the motor generator MG.
- WH-F may be driven, and the rear wheels WH-R may be driven by the motor M (four-wheel drive traveling may be used).
- the rotational output of the engine EN and the motor / generator is input to the transmission TM via an output control mechanism (not shown).
- the input rotational output is shifted by the transmission TM.
- the shifted rotational output is transmitted to the front axles DS-F via a differential ij device (not shown).
- the front wheels WH-F are rotationally driven.
- the rotational output of the front wheels WH-F is output from the front axle DS-F, Power is transmitted to the motor / generator MG via a drive unit (not shown), a transmission TM, and an output control J control mechanism (not shown) to rotate the motor generator MG.
- motor generator MG operates as a generator.
- three-phase AC power is generated in the stator winding of the motor generator MG.
- the generated three-phase AC power is converted into predetermined DC power by the semiconductor device 100.
- the DC power obtained by this conversion is supplied to battery B A. Thereby, battery B A is charged.
- the rotation output of the rear wheels WH-R is transmitted to the motor M via the rear wheel axles DS-R1 and DS-R2, and the motor M is rotated.
- the motor M operates as a generator.
- three-phase AC power is generated in the stator winding of the motor M.
- the generated three-phase AC power is converted into predetermined DC power by the semiconductor device 100.
- the DC power obtained by this conversion is supplied to battery B A. Thereby, battery B A is charged.
- the motor / generator MG may be added to the engine EN, the radiator 2, the pump 3, and the semiconductor device 100. According to the electric drive system of the present embodiment, the life of the semiconductor device can be prolonged, and maintenance of the hybrid vehicle can be facilitated.
- the configuration of a system of an electric vehicle which is one of electric vehicles using the semiconductor device according to each embodiment of the present invention will be described with reference to FIG.
- FIG. 15 is a block diagram showing an electric vehicle system using the semiconductor device according to each embodiment of the present invention.
- the front axles DS-F1 and DS-F2 of the front wheels WH-F are mechanically connected to the end of the output shaft of the motor M.
- the output of the motor M is transmitted to the front wheel axles DS-F1, DS-F2 to rotate the front wheel axles DS-F1, DS-F2.
- the front wheels WH-F are rotationally driven by the rotational drive of the front wheel axles DS-F1 and DS-F2, and the electric vehicle having the illustrated configuration is driven.
- the front wheel axles DS-F1 and DS-F2 are rotationally driven by the motor M to rotate the front wheels WH-F. May be rotated to drive the rear wheel 2 to rotate.
- the motor M, the radiator 2, the pump 3, and the semiconductor device 100 are connected by a flow path shown by a dotted line, and the semiconductor device 100 is cooled by the cooling water of the motor M.
- the AC side of the semiconductor device 100 is electrically connected to the stator winding of the module M.
- the semiconductor device 100 is a power converter that converts DC power into three-phase AC power, and controls the driving of the motor M.
- Battery B A is electrically connected to the DC side of semiconductor device 100.
- the front wheels WH-F are driven by the motor M when the electric vehicle is running (starting, running, accelerating, etc.). Therefore, DC power is supplied to the semiconductor device 100 from the battery BA. The supplied DC power is converted into three-phase AC power by the semiconductor device 100. The three-phase AC power obtained in this way is supplied to the stator winding of the motor M. As a result, the motor M is driven to generate a rotation output. This rotational output is distributed to the left and right and transmitted to the front wheel axle DS-F1 on one of the front wheels WH-F and the front wheel axle DS-F2 on the other of the front wheels WH-F. Thus, the front wheel axles DS-Fl and DS-F2 are rotationally driven. The front wheels WH-F are rotationally driven by the rotational driving of the front wheel axles DS-F1 and DS-F2.
- the front wheels WH-F When the electric vehicle is regenerating (when depressing the brake, decelerating the accelerator, or stopping the accelerator), the front wheels WH-F The force is transmitted to the motor M via the front axle DS-Fl, 03-2, and the motor M is rotated. As a result, the motor M operates as a generator. By this operation, three-phase AC power is generated in the stator winding of the motor M. The generated three-phase AC power is converted into predetermined DC power by the semiconductor device 100. The DC power obtained by this conversion is supplied to battery BA. Thereby, battery BA is charged.
- the life of the semiconductor device can be reduced, and the maintenance of an eight-wheel vehicle can be facilitated.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling, Air Intake And Gas Exhaust, And Fuel Tank Arrangements In Propulsion Units (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04705152A EP1713169A1 (en) | 2004-01-26 | 2004-01-26 | Semiconductor device |
CNA2004800409075A CN1906840A (zh) | 2004-01-26 | 2004-01-26 | 半导体装置 |
US10/587,283 US7579805B2 (en) | 2004-01-26 | 2004-01-26 | Semiconductor device |
PCT/JP2004/000658 WO2005071824A1 (ja) | 2004-01-26 | 2004-01-26 | 半導体装置 |
JP2005517177A JPWO2005071824A1 (ja) | 2004-01-26 | 2004-01-26 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/000658 WO2005071824A1 (ja) | 2004-01-26 | 2004-01-26 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005071824A1 true WO2005071824A1 (ja) | 2005-08-04 |
Family
ID=34805297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/000658 WO2005071824A1 (ja) | 2004-01-26 | 2004-01-26 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7579805B2 (ja) |
EP (1) | EP1713169A1 (ja) |
JP (1) | JPWO2005071824A1 (ja) |
CN (1) | CN1906840A (ja) |
WO (1) | WO2005071824A1 (ja) |
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JP2013220031A (ja) * | 2013-08-02 | 2013-10-24 | Mitsubishi Electric Corp | 車載用電力変換装置 |
JP2017112768A (ja) * | 2015-12-17 | 2017-06-22 | 株式会社デンソー | 電力変換装置 |
WO2018088525A1 (ja) * | 2016-11-14 | 2018-05-17 | 株式会社Ihi | 電動コンプレッサ |
JPWO2018088525A1 (ja) * | 2016-11-14 | 2019-02-21 | 株式会社Ihi | 電動コンプレッサ |
US11268505B2 (en) | 2016-11-14 | 2022-03-08 | Ihi Corporation | Electric compressor |
JP2020527932A (ja) * | 2017-07-20 | 2020-09-10 | エー−トラクション ユーロペ ベスローテン フェンノートシャップE−Traction Europe B.V. | 液体冷却を備えたモータ駆動ユニット |
JP7189196B2 (ja) | 2017-07-20 | 2022-12-13 | エー-トラクション ユーロペ ベスローテン フェンノートシャップ | 液体冷却を備えたモータ駆動ユニット |
WO2024075392A1 (ja) * | 2022-10-06 | 2024-04-11 | 株式会社日立製作所 | 電気機器 |
CN117975688A (zh) * | 2024-02-06 | 2024-05-03 | 无锡宇邦半导体科技有限公司 | 一种基于半导体设备的红外遮挡报警装置 |
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US20070215316A1 (en) | 2007-09-20 |
EP1713169A1 (en) | 2006-10-18 |
JPWO2005071824A1 (ja) | 2007-08-23 |
CN1906840A (zh) | 2007-01-31 |
US7579805B2 (en) | 2009-08-25 |
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