WO2005071039A1 - 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 - Google Patents
波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 Download PDFInfo
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- WO2005071039A1 WO2005071039A1 PCT/JP2005/000972 JP2005000972W WO2005071039A1 WO 2005071039 A1 WO2005071039 A1 WO 2005071039A1 JP 2005000972 W JP2005000972 W JP 2005000972W WO 2005071039 A1 WO2005071039 A1 WO 2005071039A1
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 234
- 239000011882 ultra-fine particle Substances 0.000 claims abstract description 198
- 239000002245 particle Substances 0.000 claims abstract description 140
- 229920005989 resin Polymers 0.000 claims abstract description 76
- 239000011347 resin Substances 0.000 claims abstract description 76
- 239000000126 substance Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims description 112
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 61
- 239000011159 matrix material Substances 0.000 claims description 49
- 150000001875 compounds Chemical class 0.000 claims description 44
- 125000000524 functional group Chemical group 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 23
- -1 n-xyl Chemical group 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 19
- 125000003277 amino group Chemical group 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 17
- 239000002952 polymeric resin Substances 0.000 claims description 17
- 229920003002 synthetic resin Polymers 0.000 claims description 17
- 230000005284 excitation Effects 0.000 claims description 15
- 229920001296 polysiloxane Polymers 0.000 claims description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 125000003368 amide group Chemical group 0.000 claims description 8
- 239000011258 core-shell material Substances 0.000 claims description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 7
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 6
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 5
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- 238000005424 photoluminescence Methods 0.000 claims description 5
- 125000001033 ether group Chemical group 0.000 claims description 4
- 125000000879 imine group Chemical group 0.000 claims description 4
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000003375 sulfoxide group Chemical group 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 125000002933 cyclohexyloxy group Chemical group C1(CCCCC1)O* 0.000 claims description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 2
- 125000006606 n-butoxy group Chemical group 0.000 claims description 2
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- SRBFZHDQGSBBOR-IOVATXLUSA-N D-xylopyranose Chemical group O[C@@H]1COC(O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-IOVATXLUSA-N 0.000 claims 1
- 244000309464 bull Species 0.000 claims 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000005921 isopentoxy group Chemical group 0.000 claims 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 claims 1
- BWBONKHPVHMQHE-UHFFFAOYSA-N tiocarlide Chemical group C1=CC(OCCC(C)C)=CC=C1NC(=S)NC1=CC=C(OCCC(C)C)C=C1 BWBONKHPVHMQHE-UHFFFAOYSA-N 0.000 claims 1
- 229960002171 tiocarlide Drugs 0.000 claims 1
- 238000010791 quenching Methods 0.000 abstract description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 39
- 239000000243 solution Substances 0.000 description 33
- 229920002050 silicone resin Polymers 0.000 description 24
- ABJSOROVZZKJGI-OCYUSGCXSA-N (1r,2r,4r)-2-(4-bromophenyl)-n-[(4-chlorophenyl)-(2-fluoropyridin-4-yl)methyl]-4-morpholin-4-ylcyclohexane-1-carboxamide Chemical compound C1=NC(F)=CC(C(NC(=O)[C@H]2[C@@H](C[C@@H](CC2)N2CCOCC2)C=2C=CC(Br)=CC=2)C=2C=CC(Cl)=CC=2)=C1 ABJSOROVZZKJGI-OCYUSGCXSA-N 0.000 description 23
- 238000009877 rendering Methods 0.000 description 23
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 19
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 16
- 229910052984 zinc sulfide Inorganic materials 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 229910052788 barium Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000002105 nanoparticle Substances 0.000 description 10
- 229910052693 Europium Inorganic materials 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 229910052712 strontium Inorganic materials 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 229910052798 chalcogen Inorganic materials 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- 241000652704 Balta Species 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000193 polymethacrylate Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000344 soap Substances 0.000 description 3
- 229910052950 sphalerite Inorganic materials 0.000 description 3
- 239000008117 stearic acid Substances 0.000 description 3
- 239000006228 supernatant Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000693 micelle Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 description 2
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- IVHVNMLJNASKHW-UHFFFAOYSA-M Chlorphonium chloride Chemical group [Cl-].CCCC[P+](CCCC)(CCCC)CC1=CC=C(Cl)C=C1Cl IVHVNMLJNASKHW-UHFFFAOYSA-M 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 241000252067 Megalops atlanticus Species 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910007946 ZrB Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000012038 nucleophile Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical group O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 125000001505 phosphinoxide group Chemical group 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
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- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
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- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
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- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
- C09K11/641—Chalcogenides
- C09K11/642—Chalcogenides with zinc or cadmium
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- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
- C09K11/641—Chalcogenides
- C09K11/643—Chalcogenides with alkaline earth metals
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- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/701—Chalcogenides
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
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- C09K11/7767—Chalcogenides
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7784—Chalcogenides
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7784—Chalcogenides
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Definitions
- Wavelength converter light emitting device, method of manufacturing wavelength converter, and method of manufacturing light emitting device
- the present invention relates to a wavelength converter, a light emitting device, a method of manufacturing a wavelength converter, and a method of manufacturing a light emitting device used for a light emitting device that converts light emitted from a light emitting element into a wavelength and extracts the light to the outside.
- the present invention relates to a wavelength converter, a light emitting device, a method for manufacturing a wavelength converter, and a method for manufacturing a light emitting device, which are preferably used for a backlight power supply for an electronic display, a fluorescent lamp, and the like.
- LED chips Light-emitting elements made of a semiconductor material (hereinafter, also referred to as LED chips) are small in size, have high power efficiency, and emit vivid colors. In addition, LED chips have excellent features such as long product life and low on power consumption as they are strong in repeated on-off lighting, making them suitable for backlight sources such as liquid crystals and lighting sources such as fluorescent lamps. The application of is expected.
- the application of the LED chip to a light emitting device is such that part of the light of the LED chip is wavelength-converted by a phosphor, and the wavelength-converted light is mixed with the wavelength-converted light, and the LED light is mixed and emitted. By doing so, it has already been manufactured as a light-emitting device that emits a color different from the LED light.
- a light emitting device has been proposed in which a wavelength conversion layer containing a phosphor is provided on the LED chip surface to emit white light.
- the light emitting device is composed of a substrate 22 on which an electrode 21 is formed, an LED light emitting element 23 having a semiconductor material emitting light having a center wavelength of 470 nm on the substrate 22, and a light emitting element 23 on the substrate 22. And a wavelength conversion layer 24 provided so as to cover 23, wherein the wavelength conversion layer 24 contains a phosphor 25. .
- a reflector 26 for reflecting light may be provided on the side surface of the light emitting element 23 and the wavelength conversion layer 24, and the light escaping to the side surface may be focused forward to increase the intensity of the output light.
- the phosphor when the light emitted from the light emitting element 23 is applied to the phosphor, the phosphor is excited to emit visible light, and this visible light is used as an output.
- a purple LED chip having a peak of 40 Onm or less is used as the LED light emitting element 23 in FIG. 6, and three kinds of phosphors 25 are formed on the wavelength conversion layer 24 by a polymer resin. It has been proposed to adopt a structure mixed therein and convert violet light into red, green and blue wavelengths to emit white light (for example, see Patent Document 2).
- the light emitting device described in Patent Document 2 has an advantage that the color rendering properties are greatly improved because it covers a wide range of emission wavelengths. Self-quenching occurs due to the interaction between the phosphors, such as the red phosphor absorbing the light converted by the blue phosphor because the 25 types of phosphors 25 are mixed and present. Since the phosphor absorbs the light again, the luminous efficiency as a whole decreases. As a result, the light-emitting device with insufficient light-emission intensity becomes darker, and it is necessary to increase power consumption to compensate for this.
- Patent Document 3 has a problem that the luminous efficiency (fluorescence quantum yield) of the phosphor is low, and particularly the luminous efficiency of red in the 600 to 750 nm region is low.
- Non-Patent Document 1 it has been studied to use semiconductor ultrafine particles having an average particle diameter of lOnm or less as a phosphor for obtaining high luminous efficiency at each wavelength.
- the semiconductor ultrafine particles when the average particle size of the semiconductor ultrafine particles is set to an appropriate value of about lOnm, the semiconductor ultrafine particles rapidly repeat light absorption and light emission, so that a high fluorescence yield can be obtained. Also, since the energy level becomes discrete and the band gap energy of the semiconductor ultrafine particles changes according to the particle size of the phosphor, changing the particle size of the semiconductor ultrafine particles changes the red (long wavelength) to blue ( It shows various light emission up to short wavelength).
- cadmium selenide which emits fluorescence at a wavelength of 700 to 800 nm, has a particle size of 2 nm to lOnm By changing within the range, light with high fluorescence yield, red (long wavelength) to blue (short wavelength) is emitted. Therefore, it is expected that an efficient light-emitting device with high color rendering can be produced by using this method.
- the first problem is that when the particle size of the semiconductor particles is reduced to about 20 nm, the ratio of the surface area to the volume is high, and the particle surface reacts with water to cause deterioration of the fluorescence characteristics. . For this reason, in order to obtain a stable light emitting device for a long period of time, it is necessary to devise a method that does not expose the phosphor particles to moisture.
- As a method of solving this problem there is a method of mounting a phosphor in a light emitting device as a composite in which a phosphor is dispersed in a resin matrix having low moisture permeability.
- the phosphor reacts with moisture in the process of mixing the phosphor with the resin and hardening, thereby deteriorating the characteristics of the phosphor.
- the second problem is that semiconductor ultrafine particles are aggregated.
- the diameter of the semiconductor particles exceeds 20 nm, even if the semiconductor particles form an aggregate, the color of the light generated by the aggregate is the same as the color of the light generated by the single particle, so that the aggregation is not so large. You don't need to worry.
- Non-Patent Document 2 As a method for solving the second problem, there has been reported a method of dispersing and fixing semiconductor ultrafine particles as single particles in a polymethacrylate matrix (see Non-Patent Document 2). Also, ultrafine semiconductor particles are dispersed in ethanol, There has been reported a method of obtaining a film in which semiconductor ultrafine particles are dispersed by mixing and applying the mixture to a tylene oxide paint (see Patent Document 5).
- Another characteristic required of the resin of the wavelength conversion section in which semiconductor ultrafine particles are dispersed in the resin is transparency. Therefore, it is possible to stably disperse semiconductor ultrafine particles as single particles in a resin that satisfies all three characteristics of light stability, heat resistance, and transparency. This is important in manufacturing a light-emitting device that emits white light.
- the semiconductor ultrafine particles have an energy higher than the band gap, the emission life is 100,000 times shorter than that of rare earths, where the excitation wavelength is not limited. It has the advantage of much less degradation than organic dyes. Therefore, it is expected that a highly efficient and long-life light emitting device can be realized.
- Non-Patent Document 2 reports a method of fixing cadmium selenium nanoparticles coated with trioctylphosphine in a polymethacrylate matrix.
- the hydrocarbon-based polymer resin used as the matrix is inferior in light resistance, heat resistance, etc., and because water and oxygen permeate little by little, the immobilized semiconductor ultrafine particles gradually deteriorate. there were.
- Patent Document 1 JP-A-11-261114
- Patent Document 2 Japanese Patent Application Laid-Open No. 2002-314142
- Patent Document 3 JP 2003-160336 A
- Patent Document 4 JP 2003-225900A
- Patent Document 5 JP 2002-121548 A Non-patent document 1: RN Bhargava, Phys. Rev. Lett., 72, 416 (1994)
- Non-patent document 2 Jinwook Lee et al, Adv. Mater., 12, No. 15, 1102 (2000) Disclosure of the invention
- a main object of the present invention is to provide a wavelength converter that reduces self-quenching between phosphors and is useful for a light emitting device having high luminous efficiency, and a light emitting device using the same.
- Another object of the present invention is to use semiconductor ultrafine particles having an average particle diameter of 20 nm or less, suppress the deterioration of the fluorescence characteristics due to moisture, and disperse the semiconductor ultrafine particles in a resin as single particles without aggregation.
- An object of the present invention is to provide a wavelength converter and a light emitting device using the same.
- a wavelength converter according to the present invention for solving the above problems has the following configuration.
- At least one kind of semiconductor ultrafine particles having an average particle diameter of 20 nm or less and at least one kind of fluorescent substance having an average particle diameter of 0.1 ⁇ or more are each a resin matrix.
- a wavelength converter comprising a plurality of wavelength conversion layers contained therein.
- the semiconductor composition wherein the semiconductor ultrafine particles are composed of at least two or more elements belonging to Groups IB, II, III, IV, V and VI of the periodic table.
- the wavelength converter according to (1) wherein
- the surface modifying molecule is selected from an amino group, a mercapto group, a carboxy group, an amide group, an estereno group, a carbonyl group, a phosphoxide group, a sulfoxide group, a phosphone group, an imine group, a butyl group, a hydroxy group, and an ether group.
- the wavelength converter according to (6) comprising at least one selected functional group.
- the side chain is methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butynole group, n-pentynole group, iso-pentynole group, n-xynole group, iso- Hexinole, cyclohexyl, methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, iso-butbutoxy, n-pentoxy, iso-pentoxy, n-xyloxy, iso —Hexyloxy group and cyclohexyloxy group power
- the wavelength conversion layer according to (13) which is at least one selected from the group consisting of:
- the light emitting device of the present invention has the following configuration.
- a light-emitting device comprising: a light-emitting element that is provided on a substrate and emits excitation light; and a wavelength converter that is located in front of the light-emitting element and converts the excitation light into visible light, and uses the visible light as output light.
- the wavelength converter comprises, as a phosphor, at least one kind of semiconductor ultrafine particles having an average particle diameter of 20 nm or less, and at least one kind of fluorescent substance having an average particle diameter of 0.1 / m or more.
- a light emitting device comprising a plurality of wavelength conversion layers each containing a compound in a resin matrix.
- the plurality of wavelength conversion layers are arranged so that the peak wavelength of the converted light converted by each wavelength conversion layer becomes shorter in order from the light emitting element side to the outer side.
- each of the plurality of wavelength conversion layers contains a phosphor.
- the wavelength converter includes at least three wavelength conversion layers, and the three wavelength conversion layers
- a wavelength conversion layer containing the semiconductor ultrafine particles is provided on the light emitting element side, and a peak wavelength of output light from the semiconductor ultrafine particles is longer than a peak wavelength of output light from the fluorescent substance.
- a light-emitting device comprising: a light-emitting element provided on a substrate for emitting excitation light; and a wavelength converter located in front of the light-emitting element and converting the excitation light into visible light, and using the visible light as output light.
- the wavelength converter as a phosphor has an average particle size of 20 nm or less.
- the method for manufacturing a wavelength converter of the present invention comprises:
- ultrafine semiconductor particles are synthesized in a liquid phase, and an amino group is formed mainly by a bond between silicon and oxygen in the liquid phase.
- a step of coordinating a silicone compound having a functional group selected from a carboxyl group, a mercapto group and a hydroxy group is also known as a silicone compound having a functional group selected from a carboxyl group, a mercapto group and a hydroxy group.
- the method for manufacturing a light emitting device of the present invention includes a step of mounting a light emitting element on a substrate and a step of disposing the wavelength converter according to (1) so as to cover the light emitting element.
- a phosphor having an average particle diameter of 0.1 ⁇ m or more and an average particle having a diameter of 20 nm or less smaller than the Balta exciton Bohr radius are used. Since semiconductor ultrafine particles having a diameter are used, highly efficient light emission is possible, and the amount of particles dispersed in the matrix resin can be reduced.
- the semiconductor ultrafine particles are made of a specific semiconductor composition and have a specific band gap energy, they emit fluorescence in the range of 400 to 900 nm. Can be expressed.
- the emission wavelength can be controlled over a wide range by the semiconductor ultrafine particles, the color rendering properties can be greatly improved, and a light emitting device having excellent color rendering properties can be realized.
- the resin matrix of the wavelength converter is a single resin layer having substantially no boundaries, attenuation of light at the boundaries is suppressed. Efficiency can be improved.
- the semiconductor ultrafine particles are stabilized.
- the amount of the compound covering the semiconductor ultrafine particles becomes a sufficient amount.
- the effect of protecting the ultrafine conductor particles from moisture can be sufficiently obtained. Therefore, the deterioration of the fluorescence characteristics of the ultrafine particle structure is small.
- the relative amount of the compound coordinated to the semiconductor ultrafine particles with respect to the semiconductor ultrafine particles is sufficient, so that the ultrafine particle composition can maintain a stable dispersed state in the resin (for example, silicone resin) for a long time.
- the number of silicon-oxygen repeating units of the compound is 500 or less, the viscosity of the compound can be reduced, so that the compound can be efficiently coordinated with the semiconductor ultrafine particles.
- the semiconductor ultrafine particles are stabilized, so that the semiconductor particles are dissolved and the particle diameter becomes small. Problems such as In addition, since the average particle size is 20 nm or less, the effect of improving the fluorescence yield by the semiconductor ultrafine particles rapidly repeating light absorption and light emission is sufficient. As a result, an ultrafine particle structure having a high fluorescence yield can be produced.
- the semiconductor ultrafine particles have a core-shell structure, it is possible to prevent a decrease in fluorescence quantum efficiency due to a crystal lattice defect on the crystal surface of the core.
- the compound since the compound has two or more side chains having the functional group, the compound is bonded to the semiconductor fine particles at each functional group. It is possible to form a stable nanoparticle structure by binding more strongly than when only one functional group is used.
- the specific group used as the side chain preferably the side chain other than the side chain to which the functional group is attached, does not absorb visible light and ultraviolet light, and thus is light-fast. It is possible to obtain an ultrafine particle structure having high properties.
- the wavelength converter of the above since the semiconductor ultrafine particles have a photoluminescence function, the nanoparticle structure and the LED that converts electric power into light using the photoluminescence function are used. By combining the above, a small light emitting device can be obtained.
- the wavelength converter of the above (16) since the uncured resin matrix is in a liquid state, the wavelength converter can follow the unevenness even when the wavelength converter is installed on a structure having unevenness. it can.
- the wavelength converter of the above (17) since the refractive index of the resin matrix is 1.7 or more, the light whose wavelength has been converted is efficiently emitted out of the wavelength converter, and the resin matrix and the air The proportion of light reflected at the interface between and can be reduced.
- the resin matrix is cured by thermal energy, so that a light emitting device can be manufactured with inexpensive equipment such as a dryer.
- the resin matrix is cured by light energy, a liquid uncured resin matrix is applied on the light emitting element and cured by photocuring.
- a light emitting device can be manufactured without adversely affecting a light emitting element by heat.
- the resin matrix contains a polymer resin mainly composed of silicon-oxygen bonds, light resistance, heat resistance, and transparency can be improved.
- the wavelength converter of the above (21) emits fluorescence having at least two or more intensity peaks in the visible light wavelength range, so that high color rendition can be easily achieved.
- the light-emitting device according to (22) or (23) is similar to (1) or (2) above, in that the semiconductor ultrafine particles having an average particle diameter of 20 nm or less smaller than the Balta exciton Bohr radius are used as the phosphor. As a result, highly efficient light emission can be realized.
- the self-quenching is based on the finding that short-wavelength light emitted from a phosphor is absorbed by another phosphor and long-wavelength light is not absorbed.
- the plurality of wavelength conversion layers are arranged such that emission wavelengths (that is, peak wavelengths of converted light converted by the respective wavelength conversion layers) become shorter in order from the light emitting element side to the outside. are doing. Therefore, self-quenching between phosphors in the wavelength conversion layer can be reduced, and high luminous efficiency can be realized.
- the plurality of wavelength conversion layers each contain a phosphor, it is possible to cover the emission wavelength in a wide range, so that the color rendering properties are significantly improved. improves.
- the band gap energy of at least a part of the semiconductor ultrafine particles is made smaller than the energy emitted by the light emitting element, so that the energy emitted by the light emitting element can be efficiently reduced.
- the luminous efficiency is improved because it can be well absorbed by semiconductor ultrafine particles.
- the wavelength converter includes at least three wavelength conversion layers, and the converted lights respectively converted by the three wavelength conversion layers are red and green, respectively. Since the wavelength corresponds to blue and blue, it is possible to cover the emission wavelength in a wide range, and the color rendering properties are greatly improved.
- the wavelength conversion layer is formed of the polymer resin thin film containing the phosphor, deterioration of the wavelength conversion layer due to light emitted from the light emitting element is suppressed. And durability can be improved.
- the phosphor contained in the wavelength conversion layer is an average particle Because they are ultrafine semiconductor particles with a diameter of 10 nm or less, they can enhance the luminous efficiency and improve the lifetime.
- a wavelength conversion layer containing semiconductor ultrafine particles is provided on the light emitting element side, and a peak wavelength of output light from the semiconductor ultrafine particles. Is larger than the peak wavelength of the output light from the fluorescent substance, so that self-quenching between the fluorescent substances in the wavelength conversion layer can be reduced, and high luminous efficiency can be realized.
- the central wavelength of the excitation light is 450 nm or less
- the external quantum efficiency of the light emitting element is high
- the phosphor in the wavelength converter is the primary light from the light emitting element. Is highly efficiently absorbed and wavelength converted, so that a high optical output can be realized.
- the light emitting device of (34) above has a peak wavelength of the output light of 400 to 900 nm, so that a light emitting device with excellent color rendering properties can be realized.
- the wavelength conversion layer is made of a polymer resin thin film or a sol-gel glass thin film containing a phosphor, deterioration of the wavelength conversion layer is suppressed by light emitted from the light emitting element. And the durability can be improved.
- FIG. 1 is a schematic sectional view showing an embodiment of the light emitting device of the present invention.
- the light emitting device of the present invention includes a substrate 2 on which an electrode 1 is formed, a light emitting element 3 including a semiconductor material that emits light having a center wavelength of 450 nm or less on the substrate 2, A wavelength converter formed on the substrate so as to cover the light emitting element;
- the wavelength converter 4 includes a plurality of wavelength conversion layers 4a, 4b, and 4c.
- the wavelength conversion layers 4a, 4b, and 4c include phosphors 5a, 5b, and 5c, respectively, and the phosphors 5a and 5b. 5c are directly excited by the light emitted from the light emitting element 3, respectively, and generate visible light as converted light.
- the plurality of converted lights are combined and extracted as output light.
- a reflector 6 that reflects light is provided on the side surface of the light emitting element 3 and the wavelength converter 4, and the light escaping to the side surface is reflected forward to increase the intensity of output light. it can.
- the plurality of wavelength conversion layers 4a, 4b, 4c having different emission wavelengths are arranged such that the peak wavelength of the converted light becomes shorter in order from the light emitting element 3 side to the outside.
- the wavelength converter 4 includes three wavelength conversion layers 4a, 4b, and 4c, and the wavelength conversion layer in which the peak wavelength of the converted light by the wavelength conversion layer 4b is shorter than the peak wavelength of the converted light by the wavelength conversion layer 4a.
- the wavelength conversion layers 4a, 4b, 4c are arranged so that the peak wavelength of the converted light by 4c is shorter than the peak wavelength of the converted light by the wavelength conversion layer 4b.
- the excitation light emitted from the light emitting element 3 is converted by the phosphors 5a, 5b, and 5c into converted lights A, B, and C.
- the converted light A has a longer wavelength than the converted lights B and C. Therefore, the converted light A does not have enough energy to excite the phosphors 5b and 5c to generate visible light.
- self-quenching between phosphors in the wavelength converter 4 can be reduced, and high conversion efficiency can be achieved without increasing the phosphor concentration in the wavelength conversion layers 4a, 4b, and 4c. I can do it.
- the converted light B since the converted light B has a longer wavelength than the converted light C, the converted light B does not excite the phosphor 5c, and self-quenching due to absorption of the converted light B in the wavelength conversion layer 4c is performed. It can be reduced.
- a plurality of wavelength conversion layers are provided, and the emission wavelength of the wavelength conversion layer is reduced in order from the one closer to the light-emitting element, in other words, the longer wavelength is closer to the light-emitting element and shorter than the light-emitting element.
- Wavelength the phenomenon that the phosphor absorbs the short-wavelength converted light can be suppressed, and high conversion efficiency can be obtained without increasing the concentration of the phosphor 5 in the wavelength conversion layer to increase the content. Can be. As a result, high light output can be expected with low power consumption.
- the substrate 1 a substrate having excellent thermal conductivity and a large total reflectance is used.
- a polymer resin in which metal oxide fine particles are dispersed is preferably used in addition to ceramic materials such as alumina and aluminum aluminum.
- the light emitting element 3 preferably emits light having a center wavelength of 450 nm or less, particularly 380 420 nm.
- the phosphor can be efficiently excited, the output light intensity can be increased, and a light emitting device with higher emission intensity can be obtained. It becomes possible.
- the light-emitting element 3 is not particularly limited as long as it emits the above-mentioned center wavelength.
- the light-emitting element 3 has a structure (not shown) including a light-emitting layer made of a semiconductor material on the surface of the light-emitting element substrate. Is preferred in that it has high external quantum efficiency.
- Examples of such a semiconductor material include various semiconductors such as ZnSe and a nitride semiconductor (such as GaN), but the kind of the semiconductor material is not particularly limited as long as the emission wavelength is within the above-mentioned wavelength range.
- These semiconductor materials may be formed into a stacked structure having a light-emitting layer of a semiconductor material on a light-emitting element substrate by a crystal growth method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. .
- MOCVD metal organic chemical vapor deposition
- molecular beam epitaxy molecular beam epitaxy
- the material of the light emitting element substrate 2 can be selected in consideration of the combination with the light emitting layer.
- a light emitting layer made of a nitride semiconductor is formed on the surface, sapphire, spinel, SiC, Si, Zn Si, ZrB , GaN, and quartz are preferably used.
- Phosphors 5a, 5b, and 5c contained in wavelength conversion layers 4a, 4b, and 4c, respectively, are directly excited by light emitted from light emitting element 3, the wavelengths of these lights are synthesized, and the emission wavelengths in a wide range. Covers the length and can greatly improve color rendering.
- the peak wavelength of visible light thus obtained is preferably 400 to 900 nm, particularly 450 to 850 nm, particularly preferably 500 to 800 nm.
- the wavelength converter 4 desirably emits fluorescence having two or more intensity peaks in the visible light wavelength range.
- a plurality of wavelength conversion layers 4a, 4b, and 4c having different conversion wavelengths are desired. It is preferable that the wavelength of the light be converted to a wavelength corresponding to red, green, and blue. Thereby, the emission wavelength can be covered in a wide range, and the color rendering can be further improved.
- the light emitting device shown in FIG. 1 has a three-layer structure having three wavelength conversion layers. The wavelength conversion layers 4a, 4b, and 4c having different conversion wavelengths are formed.
- the conversion wavelength peak of the first wavelength conversion layer 4a is 640 nm ⁇ 10 nm
- the conversion wavelength peak of the second wavelength conversion layer 4b is 520 nm
- the conversion wavelength peak of the wavelength conversion layer 4c is 470 nm ⁇ 10 nm.
- the wavelength conversion layers 4a, 4b, and 4c are the same as the above-described phosphors 5a, 5b, and 5c, respectively.
- it is formed by dispersing in a gel glass thin film. It is desirable that the polymer resin film or the sol-gel glass thin film has high transparency and durability that does not easily change its color by heating or light.
- the polymer resin film has an advantage that it is easy to uniformly disperse and carry the phosphor, and it is possible to suppress light degradation of the phosphor.
- the materials are not particularly limited.Examples include epoxy resins, silicone resins, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyetherenolephone, cellulose acetate, and polyarylate. Is used. In particular, it is preferable to have a light transmittance of 95% or more in a wavelength region of 350 nm or more. From the viewpoint of heat resistance in addition to such transparency, epoxy resins and silicone resins are more preferably used.
- sol-gel glass examples include silica, titania, zirconia, and a composite system thereof.
- the phosphor may be dispersed alone in the zonole gel glass, or a metal atom such as Si, Ti, or Zr may be bonded to the phosphor with an organic molecule.
- the durability against light, particularly ultraviolet light, and the durability against heat are high, so that the product life can be extended.
- sol-gel glass can improve stability, a highly reliable light-emitting device can be realized.
- the wavelength converter 4 of the present invention can be formed by a coating method since the wavelength converter 4 is formed of a polymer resin film or a sol-gel glass film.
- the coating method is not limited as long as it is a general coating method, but coating with a dispenser is preferable.
- the phosphor 5 included in the wavelength converter 4 is not particularly limited as long as it is excited by light having a wavelength of 450 nm or less and emits light in a range of 400 to 900 nm.
- a commonly used phosphor can be used.
- A1, YA10 Tb, Y3 (A1, Ga) ⁇ : Tb, YSi ⁇ : Tb, ZnSi ⁇ : Mn, ZnS: Cu
- semiconductor ultrafine particles can also be used, and it is particularly preferable to use semiconductor ultrafine particles having an average particle diameter of 20 nm or less.
- semiconductor ultrafine particles with a particle diameter of 20 nm or less can emit various colors from red (long wavelength) to blue (short wavelength), and if the energy is higher than the band gap, the excitation wavelength is limited. Ganare.
- the light-emitting life cycle is 100,000 times shorter than that of rare earths, and the cycle of light emission is repeated quickly, so that extremely high luminance can be realized, and the deterioration is less than that of organic dyes. Is about 100,000 times the number of dyes). Therefore, when semiconductor ultrafine particles are used, excellent luminous efficiency can be realized, and a long-life light emitting device can be realized.
- the semiconductor ultrafine particles are not particularly limited as long as they are excited by light having a wavelength of 450 nm or less and emit light having a wavelength in the range of 400 to 900 nm. That is, a simple substance of a group 14 element of the periodic table such as C, Si, Ge, and Sn, a simple substance of a group 15 element of the periodic table such as P (black phosphorus), a simple substance of a group 16 element of the periodic table such as Se or Te, Plural group 14 elements of the periodic table such as SiC, etc., SnO, Sn (ll) Sn (lV) S, SnS, SnS, SnSe, SnTe, PbS, PbS
- Periodic Table Group 14 and the Periodic Table Group 16 elements BN, BP, BAs, A1N, A1P, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb and other compounds of group 13 elements of the periodic table and elements of group 15 of the periodic table (or III-V compound semiconductors), AlS3, AlSe, GaS, GaSe, GaTe, In ⁇ , InS , In Se, In Te, etc.
- Periodic Table 13 Group elements and Periodic Table Compounds with group 17 elements such as compounds with group 17 elements, Zn ⁇ , ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgS, HgSe, HgTe II-VI compound semiconductors), Cu ⁇ , Cu Se, etc.
- Compounds of Group 11 elements and Group 16 elements such as CuCl, CuBr, Cul, AgCl, AgBr, etc.
- Examples include compounds of Group 11 elements of the periodic table and Group 17 elements of the periodic table. It is preferable to use ZnS, ZnSe, CdS, CdSe, and CdTe forces that exhibit excellent light emission characteristics.
- the ratio of the semiconductor ultrafine particles to the fluorescent substance is such that the weight ratio of the fluorescent substance to the semiconductor ultrafine particles is in the range of 1: 0.25. Since a decrease in efficiency due to mutual absorption between the fine particles and the fluorescent substance can be suppressed, a highly efficient light emitting device can be realized.
- the ultrafine semiconductor particles according to the present invention may have a so-called core-shell structure including an inner core (core) and an outer shell (shell).
- the core-shell type semiconductor ultrafine particles may be suitable for applications utilizing the exciton absorption / emission band.
- it is generally effective to use a material having a band gap (forbidden band width) larger than that of the core as the composition of the semiconductor particles of the shell to form an energy barrier. This is presumed to be due to a mechanism for suppressing the influence of undesirable surface states and the like due to the influence of the outside world and crystal lattice defects on the crystal surface.
- the composition of the semiconductor material suitably used for the shell includes a material having a band gap in a Balta state of 2 ⁇ OeV or more at a temperature of 300 K, for example, BN, BAs, GaN, or the like.
- Group V compound semiconductors such as GaP, etc .
- II VI compound semiconductors such as Zn ⁇ , ZnS, ZnSe, ZnTe, Cd ⁇ , and CdS
- Periodic Table Group 2 and Group 16 elements such as MgS and MgSe. Compounds and the like are preferably used.
- the ultrafine semiconductor particles according to the present invention may be covered with a surface modifying molecule comprising an organic ligand.
- a surface modifying molecule comprising an organic ligand.
- Surface modifying molecules include n-propyl, isopropyl, n-butyl, isobutyl, n-pentyl, cyclopentyl, n-xyl, cyclohexyl, octyl, decyl, dodecyl, and hexyl.
- Examples thereof include a hydrocarbon group containing an aromatic hydrocarbon group such as an alkyl group having about 3 to 20 carbon atoms such as a sadecyl group and an octadecyl group, a phenyl group, a benzyl group, a naphthyl group, and a naphthylmethyl group.
- a sulfur atom-containing functional group such as a mercapto group, a disulfide group, a thiophene ring, an amino group, a pyridine group Ring, amide bond, nitrogen atom-containing functional group such as nitrile group, carboxyl group, sulfonic acid group, phosphonic acid group, acidic functional group such as phosphinic acid group, and phosphorus atom-containing functional group such as phosphine group and phosphinoxide group Preferred are a group or a hydroxyl group, a carbonyl group, an ester bond, an ether bond, and a functional group containing an oxygen atom such as a polyethylene glycol chain.
- the semiconductor ultrafine particles have a silicone compound having a functional group selected from an amino group, a carboxy group, a mercapto group and a hydroxy group, which is mainly composed of silicon-oxygen bonds, coordinated on the particle surface.
- the matrix is preferably made of a silicone resin having a silicon-oxygen bond as a main component, and the semiconductor ultrafine particles and the fluorescent substance are preferably dispersed in the silicone resin.
- the ultrafine semiconductor particles according to the present invention are manufactured by a general manufacturing method.
- Plasma process ⁇ Electric heating process ⁇ Gas phase chemical reaction method such as laser process, physical cooling method, sol-gel method 'Alkoxide method' 'Coprecipitation method' 'Hot soap method' 'Hydrothermal synthesis method' Spray pyrolysis method etc. Liquid phase method, mechanochemical bonding method, etc. are used
- the phosphors 5a, 5b, 5c contained in the wavelength conversion layers 4a, 4b, 4c, respectively, are combinations of ultrafine semiconductor particles having different conversion wavelengths, which may be combinations of fluorescent substances having different conversion wavelengths. Alternatively, a combination of a fluorescent substance and semiconductor ultrafine particles may be used.
- a desired emission wavelength can be obtained only by controlling the particle diameter. Since the light-emitting device can be formed from a substance, a low-cost light-emitting device can be provided by simplifying a process.
- the semiconductor ultrafine particles of the present invention can change the emission wavelength in the range of 400 to 900 nm by changing the average particle diameter, the same materials having different average particle diameters are provided in different wavelength conversion layers. Can be used.
- the thickness of the wavelength converter 4 of the present invention is preferably 0.1 to 5. Omm from the viewpoint of conversion efficiency. Phosphors having a particle size of several zm preferably have a thickness range of 0.3-1. Omm. In the case of ultrafine semiconductor particles having a particle diameter of 20 nm or less, the thickness is preferably 0.1 to 1 mm, particularly preferably 0.1 to 0.5 mm. Within this range, the light emitted from the light emitting element can be converted into visible light with high efficiency. The converted visible light can be transmitted to the outside with high efficiency.
- the layer configuration of the wavelength converter 4 is not particularly limited as long as it has a two-layer structure or more, but the three-layer structure shown in FIG. 1 is more preferable in terms of improving color rendering properties. This is expected to further improve color rendering.
- FIG. 2 shows an example of a four-layer structure.
- a light emitting element 13 including a semiconductor material that emits light having a center wavelength of 450 nm or less is provided on a substrate 12 on which an electrode 11 is formed, and a wavelength converter 14 is formed so as to cover the light emitting element 13.
- the wavelength converter 14 includes four types of wavelength conversion layers 14a, 14b, 14c, and 14d, and the wavelength conversion layer 14a close to the light emitting element 13 includes a phosphor 15a that emits a long-wavelength emission peak.
- the wavelength conversion layers 14b, 14c, and 14d are formed so as to contain the phosphors 15b, 15c, and 15d, respectively, each having a shorter wavelength emission peak as the distance increases.
- a phosphor that generates 590 nm ⁇ 10 nm converted light may be used.
- the color rendering properties can be further improved.
- a reflector 16 for reflecting light may be provided on the side surface of the light emitting element 13 and the wavelength converter 14, and the light escaping to the side surface may be reflected forward to increase the intensity of the output light. it can.
- the wavelength converter is formed, for example, by laminating and bonding a wavelength conversion layer composed of a polymer resin thin film containing a phosphor or a zolgel glass thin film as described above.
- a wavelength conversion layer composed of a polymer resin thin film containing a phosphor or a zolgel glass thin film as described above.
- the wavelength converter obtained in this way has substantially no boundary. Since it is a single resin layer having no eyes, it is possible to prevent the luminous efficiency from being reduced due to the voids formed at the boundaries.
- the obtained wavelength converter has a two-layer structure, it may be used as it is in a light emitting device, or may be used by laminating and bonding with another wavelength converter.
- the semiconductor ultrafine particles 33 of the present invention have a structure in which the surface is covered with a compound 35 having a structure in which two or more silicon-oxygen bonds are repeated. Is preferred. In particular, as shown in FIG. 3 (b), it is desirable that the compound 35 is coordinated with the semiconductor ultrafine particles 33.
- the semiconductor ultrafine particles 3 As described above, by covering the surface of the semiconductor ultrafine particles 3 with the compound 5 having a structure in which two or more silicon-oxygen bonds are repeated and having a high hydrophobicity, the characteristics of the semiconductor ultrafine particles 3 are deteriorated by water. Can be prevented.
- the compound 35 since the compound 35 has a very high affinity for the silicone resin, the semiconductor ultrafine particles 33 can be easily dispersed in the silicone resin, and the bonding strength between the semiconductor ultrafine particles 33 and the silicone resin can be improved. Can be enhanced.
- the silicon-oxygen bond be further formed in the compound 35 in an amount of 5 or more, particularly 7 or more, from the viewpoint of improving the hydrophobicity of the compound 35.
- the number of silicon-oxygen bonds is desirably 300 or less, particularly 100 or less.
- the compound 35 is composed of a main chain 35a that repeats two or more silicon-oxygen bonds and a side chain 35b bonded to the main chain 35a.
- the side chain 35b having no functional group and the side chain 35c having a functional group are distinguished from each other.
- the side chain 35b has an amino group, a mercapto group, and a carboxy group as shown in the following formula (a) in order to facilitate the bonding between the semiconductor ultrafine particles 33 and the compound 35 and improve the bonding strength between the two.
- a functional group X selected from an amide group, an ester group, a carbonyl group, a phosphoxide group, a sulfoxide group, a phosphon group, an imine group, a butyl group, a hydroxy group and an ether group.
- These functional groups X act as nucleophiles because they have an unshared electron pair or a ⁇ electron, and are strongly coordinated with the semiconductor ultrafine particles 33, or are electrically superposed by the electric action of electric charge by polarization. Coordinates strongly with microparticle 33. Therefore, in the ultrafine particle structure in which the compound 35 having these functional groups is coordinated with the semiconductor ultrafine particles 33, the coordination bond can be stably maintained for a long time.
- an amino group, a mercapto group, and a carboxyl group have a strong coordination bonding force with the semiconductor ultrafine particles 33, so that a superfine particle structure 31 that is stable for a long period of time can be produced.
- the hydroxy group has a strong coordination bond with the oxide semiconductor. This is because oxygen atoms on the surface of the oxide semiconductor and hydrogen of a hydroxy group attract each other.
- These functional groups may be directly bonded to silicon atoms in the main chain 35a, or may be bonded to silicon atoms via a methylene group-ethylene group in the side chain 35b.
- an amino group, a mercapto group, a carboxy group, an amide group, an ester group, a carbonyl group, a phosphoxide group, a sulfoxide group, a phosphoxide group is any of a von group, an imine group, a vinyl group, a hydroxy group, and an ether group, is a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, and an n-butyl group.
- the compound 35 has two or more side chains 35c having a functional group. In this way, the compound 35 is strongly coordinated to the semiconductor ultrafine particles 33 at a plurality of bonding points. It becomes possible.
- the compound 35 can be firmly bonded to the semiconductor ultrafine particles 33, and the compound 35 has excellent water resistance, heat resistance, and light resistance.
- An ultrafine particle structure 31 is obtained.
- the average particle diameter of the semiconductor ultra-fine particles 33 used in the ultra-fine particle structure 31 is preferably 0.520 nm because the wavelength of fluorescence can be adjusted by the particle diameter.
- a light-emitting device having high color rendering properties can be manufactured by adjusting the particle size of the semiconductor ultrafine particles.
- the average particle diameter of the semiconductor ultra-fine particles 33 exceeds 20 nm, the wavelength of fluorescence hardly changes even if the particle diameter is changed, so the color rendering properties are adjusted by changing the particle diameter of the semiconductor ultra-fine particles 33. It is not possible.
- the average particle diameter of the semiconductor ultrafine particles 33 exceeds 20 nm, a high fluorescence yield cannot be obtained due to rapid repetition of light absorption and emission of the semiconductor ultrafine particles 33.
- the average particle diameter of the semiconductor ultrafine particles 33 be 1 nm or more, particularly 2 nm or more from the viewpoint of preventing aggregation.
- the average particle size of the semiconductor ultrafine particles 33 is preferably not more than lOnm, particularly preferably not more than 5 nm in order to obtain a high fluorescence yield.
- a reverse micelle is formed with trioctylphosphinoxide, and a metal element and a chalcogen element are formed in the micelle.
- a reaction is made at a temperature of about 300 ° C.
- the semiconductor ultrafine particles 33 have a photoluminescence function from the viewpoint that a light emitting device having a small size and high color rendering properties can be manufactured.
- the semiconductor ultra-fine particles 33 are preferably made of a II-IV group compound semiconductor or a III-V group compound semiconductor because of their excellent fluorescent properties.
- ZnS, ZnSe, CdS, CdSe, and CdTe have high fluorescence quantum efficiencies, so that ultrafine particle structures with high fluorescence quantum efficiency can be produced.
- the semiconductor ultra-fine particles 33 have the above-mentioned core-shell structure from the viewpoint that the ultra-fine particle structure 31 having high fluorescence quantum efficiency can be obtained.
- the ultrafine particle structure 31 described above in the resin matrix 37 as shown in Fig. 5 By dispersing the ultrafine particle structure 31 described above in the resin matrix 37 as shown in Fig. 5, the effect of blocking the ultrafine particle structure 31 with water force is further enhanced, and therefore, the effect is further improved. The characteristic deterioration of the semiconductor ultrafine particles 33 due to moisture can be prevented. Only In addition, since the ultrafine particle structure 31 can be handled in a liquid state or a solid state from a powder state, the handleability and the storage stability are significantly improved.
- FIG. 5 shows only the ultrafine particle structure 31, the ultrafine particle structure 31 forms a wavelength converter 39 in combination with a fluorescent substance having an average particle size of 0.1 zm or more.
- the resin matrix 37 constituting the wavelength converter 39 is formed, for example, by mixing a resin matrix containing a photocurable resin or a thermosetting resin with the ultrafine particle structure 31 in a liquid state. Is obtained.
- the resin matrix 37 is desirably cured to an arbitrary shape by heat or light as necessary in terms of handling.
- the wavelength converter 39 can be cured with inexpensive equipment such as a dryer, a heater and a heater block.
- the resin matrix 37 is preferably cured by light energy from the viewpoint that a light emitting device having high adhesion between the wavelength converter 39 and the light emitting element can be obtained. If the resin matrix 37 is of a type that is cured by light energy, the liquid uncured wavelength converter 39 disposed on the light emitting element can be cured by light. According to this method, unlike the case where the thermosetting type wavelength converter 39 is used, the wavelength converter 39 can be cured without destruction of the light emitting element due to heat for curing. Accordingly, since the light emitting element and the liquid uncured wavelength converter 39 can be brought into direct contact, a light emitting device having high adhesion between the wavelength converter 39 and the light emitting element can be obtained.
- the wavelength converter 39 is excellent in light transmittance, heat resistance, light resistance, and especially water resistance.
- the silicone resin has a main chain composed of a main chain repeating silicon-oxygen bonds and a side chain bonded to the silicon atom, and a plurality of these are crosslinked.
- the side chain is a group that absorbs ultraviolet light such as a phenyl group or a vinyl group, light is absorbed by the silicone resin.
- the silicone resin used for the wavelength converter 39 has a side chain composed of a linear, branched, or cyclic saturated hydrocarbon group.
- the saturated hydrocarbon group has more than 7 carbon atoms, its heat resistance will be reduced, so the side chains will be methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl.
- the side chain 35b of the compound 35 has a methyl group, an ethyl group, an n-propyl group, an iso_propyl group, an n-butyl group, an iso_butyl group, an n-pentyl group, an iso_ Pentyl group, n-hexyl group, iso-hexyl group, cyclohexyl group, methoxy group, ethoxy group, n-propoxy group, iso-propoxy group, n-butoxy group, iso-butbutoxy group, n-pentoxy
- the group consists of a group, is o_pentoxy, n-hexyloxy, iso-hexyloxy, cyclohexyloxy, or a combination thereof.
- the wavelength converter 39 having high color rendering properties can be obtained by preparing the ultrafine particle structure 31 with several types of compositions having a particle size that is easy to produce on a manufacturing apparatus.
- the refractive index of the wavelength converter 39 is preferably 1.7 or more from the viewpoint that the light whose wavelength has been converted inside the wavelength converter 39 can be efficiently emitted to the atmosphere.
- Light emitted by the light emitting element is guided to a wavelength converter 39 in which the ultrafine particle structure 31 and the silicone resin 13 are mixed, where the wavelength of the light is converted, and then emitted into the atmosphere.
- the refractive index of the wavelength converter 39 is smaller than 1.7, light is reflected at the interface between the wavelength conversion layer 39 and the atmosphere, and is hardly emitted to the atmosphere.
- the refractive index is measured by molding a wavelength converter into a lmm-thick film and using a refractive index measuring machine 2010 Prism Brass made by Ipros.
- the wavelength converter 39 may emit fluorescence having at least two or more intensity peaks in the visible light wavelength range in that a white light-emitting device having high color rendering properties can be obtained.
- the light emitting device of the present invention has the structure shown in FIGS.
- the light emitting element 3 emits ultraviolet light, and this light is supplied to the inside of the wavelength converter 39.
- Ultraviolet light is converted into visible light by the ultrafine particle structure 31 inside the wavelength converter 39, and the converted light is emitted from the wavelength converter 39 to the outside of the light emitting device.
- the wavelength converter 39 contains ultrafine particle structures having a plurality of average particle diameters so that the output light emits light having a broad spectrum of 400 to 900 nm. .
- the band gap energy of at least a part of the semiconductor ultrafine particles 33 be smaller than the energy generated by the light-emitting element 3. If the bandgap energy of all of the semiconductor ultrafine particles 33 is higher than the energy generated by the light emitting element 3, the semiconductor ultrafine particles 33 cannot absorb the light energy generated by the light emitting element 3 and the efficiency of the light emitting device is reduced. It decreases significantly.
- the ultrafine particle structure 31 shown in FIG. 3 is manufactured by mixing the semiconductor ultrafine particles 33 with a compound 35 that repeats two or more silicon-oxygen bonds capable of coordinating bonds, and stirring while heating. be able to.
- the semiconductor ultrafine particles 33 can be produced by a hot soap method, a microreactor method, or the like using a compound mainly composed of an alkyl group and having a functional group as a solvent.
- a compound mainly containing an alkyl group for example, trioctylphosphinoxide or dodecylamine can be used.
- the compound which repeats two or more silicon-oxygen bonds capable of forming a coordinate bond those described above can be used.
- the semiconductor ultrafine particles 33 and the compound 35 are mixed and stirred while heating, whereby the trioctylphosphinoxide dodecylamine coordinated on the surface of the semiconductor ultrafine particles 33 is exchanged with the compound 35, and the semiconductor ultrafine particles 33 are mixed.
- Compound 35 can be coordinated to the surface of 33 to obtain ultrafine particle structure 1. At this time, heating may be performed as needed, and if the compound 35 can be coordinate-bonded to the surface of the semiconductor ultrafine particles 33 at room temperature, the heating need not be performed.
- the liquid uncured wavelength converter 39 can be manufactured by mixing the ultrafine particle structure 31 with an uncured resin or a resin plasticized with a solvent.
- a silicone resin or an epoxy resin can be used as the uncured resin. These resins are 2 It may be of the type that mixes and cures liquids, or it may be of the type that cures with one liquid.In the case of the type that mixes and cures two liquids, the ultrafine particle structure 31 is added to both liquids. The ultrafine particle structure 31 may be kneaded or may be kneaded in either one of the liquids.
- an acrylic resin for example, can be used as the resin having plasticity with a solvent.
- the cured wavelength converter 39 can be obtained by molding the uncured wavelength converter 39 into a film, for example, by applying it, or by casting it into a predetermined mold and solidifying it.
- a method of curing the resin there is a method using heat energy or light energy, and a method of volatilizing a solvent.
- the light emitting device of the present invention can be obtained by disposing the wavelength converter 39 on the light emitting element 3 mounted on the wiring board 2.
- Wavelength converter 39 As a method of installing the composite 39 on the light emitting element 3, it is possible to install the cured composite 39 on the light emitting element 3, or to place the liquid uncured composite 39 on the light emitting element 3. After installation, it is also possible to cure and install.
- the light emitting device of the present invention is used, for example, by arranging a plurality of light emitting devices on a substrate.
- a plurality of electrodes are formed on the substrate in advance, and it is possible to obtain the power by connecting the light emitting devices with a metal brazing material.
- a metal brazing material for example, solder can be used. This makes it possible to produce a long-life white light-emitting device assembly with high power efficiency and high color rendering.
- the light emitting device of FIG. 1 was produced. First, a light emitting device made of a nitride semiconductor was formed on a light emitting device substrate made of sapphire by metal organic chemical vapor deposition.
- the structure of the light emitting element is as follows: an n-type GaN layer as an undoped nitride semiconductor, a GaN layer as an n-type contact layer with an n-type Si-doped electrode formed on a light emitting element substrate, and an undoped nitride semiconductor
- the n-type GaN layer, the GaN layer that constitutes the light-emitting layer, the InGaN layer that constitutes the well layer, and the GaN layer that constitutes the phosphor layer form a set of I sandwiched between GaN layers.
- a multi-quantum well structure in which five nGaN layers are stacked is adopted.
- the light-emitting element was mounted in a package forming an insulating base on which a wiring pattern for arranging near-ultraviolet LEDs was formed, and a frame-shaped reflective member surrounding the near-ultraviolet LEDs.
- a light emitting element was mounted on a wiring pattern in the package via an Ag paste.
- the package was filled with a silicone resin to cover the light emitting element, and the resin was cured by heating to form an internal layer.
- the silicone resin was filled by a coating method using a dispenser.
- Ultrafine semiconductor particles consisting of aluminum and gallium nitride are dispersed and mixed under the conditions shown in Table 1, respectively.
- the obtained phosphor-containing resin paste was applied and formed on a smooth substrate by a dispenser, and heated on a hot plate at 150 ° C for 5 minutes to prepare a temporary cured film. Subsequently, this was placed in a dryer at 150 ° C for 5 hours to produce a phosphor-containing film (wavelength conversion layer) shown in Table 1. This film was attached to the upper surface of the inner layer to obtain a light emitting device.
- the multilayer wavelength converter was formed by interposing a plurality of wavelength conversion layers produced by the above method with the same silicone resin and the same material resin as the inner layer as an adhesive.
- the luminous efficiency of the light emitting device comprising each wavelength converter was measured using a light emission characteristic evaluation device manufactured by Otsuka Electronics Co., Ltd. The results are shown in Table 1.
- semiconductor ultrafine particles composed of cadmium selenide and gallium nitride were prepared by the following method.
- the solution prepared by the above method was stirred at 160 ° C.-300 ° C. for 5 minutes to synthesize cadmium selenium semiconductor ultrafine particles.
- the average particle diameter of the semiconductor ultrafine particles was controlled by changing the reaction temperature.
- the solution was cooled to room temperature.
- 200 g of toluene was further added, and the mixture was uniformly mixed.
- ethanol was further purified, and cadmium selenide particles were precipitated by applying an acceleration of 1500 G for 10 minutes by a centrifuge.
- the selenium cadmium particles obtained by the above method were added to a mixed solution of 1.lg of zinc acetate, 9.9 mL of oleic acid and 300 mL of octadecene, and the mixture was heated and stirred at 170 ° C. for 2 hours under argon flow conditions. did.
- To this solution was added 1.5 g of sulfur 12 gZ trioctylphosphine (TOP), and the mixture was stirred at 300 ° C.
- TOP trioctylphosphine
- reaction mixture was cooled to room temperature, 200 g of toluene was added thereto, and the mixture was mixed homogeneously.Additionally, ethanol was added, and the surface was coated with zinc sulfide at a speed of 1500 G for 10 minutes using a centrifugal separator. Cadmium chloride particles were precipitated.
- Cadmium selenide having an average particle size of 2 nm, 2.9 nm, 4.7 nm, and 120 nm was obtained. Further, it was confirmed that the comparative gallium nitride particles produced by the same method had an average particle diameter of 5 nm. The average particle diameter of the obtained ultrafine semiconductor particles was confirmed by TEM.
- This operation was repeated three times to remove excess modified silicone, thereby obtaining semiconductor ultrafine particles coated with amino-substituted modified silicone.
- the state of coating with the modified silicone was confirmed by Fourier transform infrared spectroscopy and further by X-ray photoelectron spectroscopy.
- Fluorescent substance synthesized by the above method, wavelength converter made using semiconductor ultrafine particles Table 1 shows the configuration and the evaluation results of the luminous efficiency.
- Sample No. 9 which is a comparative example, has a wavelength converter manufactured using only semiconductor ultrafine particles, so that the quantum efficiency in the blue region is low, and the light emitting device Has a low luminous efficiency of 9 lm / W.
- the sample No. 10 which is a comparative example, uses a phosphor material of at least 0.1 ⁇ , the luminous efficiency in the red region is low, and the luminous efficiency of the light emitting device is as low as S81mZW.
- the average particle diameter of the semiconductor ultrafine particles was as large as 12 Onm, which is outside the range of the present invention.
- the quantum efficiency of the semiconductor ultrafine particles did not improve due to the quantum confinement effect, and the luminous efficiency was 61 m / W. And got very low.
- the quantum efficiency of the fluorescent substance was reduced due to the occurrence of surface defects, and the luminous efficiency of the light emitting device was 31 mZW, which was not as high as 31 mZW. It turned out to be always smaller.
- the light emitting device including Sample No. 1 No. 8 provided with the wavelength converter according to the present invention exhibited luminous efficiency of 10 OlmZW or more.
- Sample No. 2, Sample No. 3, and Sample No. 4 showed high luminous efficiency of 481 m / W or more.
- the peak wavelength of the output light of the light emitting device using the wavelength converter of the present invention was in the range of 400-90 Onm.
- a light emitting device was manufactured by the following method. First, a light emitting device made of a nitride semiconductor was formed on a light emitting device substrate made of sapphire by metal organic chemical vapor deposition.
- the structure of the light-emitting device is as follows: an n-type GaN layer, which is an undoped nitride semiconductor, a GaN layer, which forms an n-type contact layer by forming an Si-doped n-type electrode, and an undoped nitride semiconductor, n.
- Type GaN layer then a GaN layer that constitutes a light emitting layer, a GaN layer that constitutes a well layer, and a GaN layer that constitutes a noria layer. A multiple quantum well structure was obtained.
- the light emitting element was mounted in a package forming an insulating base on which a wiring pattern for arranging near-ultraviolet LEDs was formed, and a frame-shaped reflective member surrounding the near-ultraviolet LEDs.
- a light emitting element was mounted on a wiring pattern in the package via an Ag paste.
- the package was filled with a silicone resin to cover the light-emitting element, and the resin was cured by heating to form an internal layer. Fill the silicone resin Ispenser was used.
- the semiconductor ultrafine particles and the fluorescent substance were mixed with a silicone resin, and formed into a sheet by a die coater method. After the sheet was formed, it was left at room temperature for 72 hours, and then dried at 150 ° C. for 3 hours to produce a wavelength converter of the present invention. By leaving at room temperature for 72 hours, the particles of the fluorescent substance are settled by spontaneous sedimentation. Thus, a wavelength converter with a separate structure was obtained. The obtained wavelength converter was mounted on the upper surface of the inner layer to obtain a light emitting device of the present invention.
- the semiconductor ultrafine particles were synthesized by the following method. First, semiconductor ultrafine particles of CdSe are synthesized. First, 39.5 g (0.5 M) of Se powder is dissolved in 1.25 kg of trioctylphosphine (TOP). This is called solution 1. Next, 26.6 g (0.1 M) of cadmium acetate and 0.5 kg of stearic acid are mixed and dissolved at 130 ° C. After cooling to 100 ° C or lower, solution 1 was added, and 0.75 kg of TOP was further added to make a precursor solution. This precursor solution was heated in an oil bath. The heating was performed by passing a precursor solution through a reaction tube partially immersed in an oil bath. The heating temperature was 220 ° C.
- TOP trioctylphosphine
- the reaction time was varied from 0.5 to 15 minutes to control the average particle size of the semiconductor ultrafine particles.
- the precursor solution came out of the oil bath, it was cooled by rapidly exposing it to room temperature.
- semiconductor ultrafine particles having an average particle size of 2 to 132 nm were obtained.
- LiEuW ⁇ can be specified at
- Table 2 shows the manufacturing conditions of the wavelength converter manufactured by the above method, and the luminous efficiency of the light emitting device including the wavelength converter.
- the luminous efficiency of the light-emitting device was evaluated using a light-emitting characteristic evaluation device manufactured by Otsuka Electronics Co., Ltd.
- the light-emitting devices composed of Sample No. 13 Nol6 provided with the wavelength converter according to the present invention all showed a luminous efficiency of 101 m / W or more.
- Sample No. 13 which was manufactured using semiconductor ultrafine particles having an average particle diameter of 4 nm, showed a very high luminous efficiency of 541 mZW.
- trioctyl phosphinoxide is 40 Og calories 300. Heated to C and dissolved.
- the solution 1 was added to this solution and reacted at 300 ° C. After completion of the reaction, the reaction solution was cooled to room temperature, 200 g of toluene was further added to the cooled solution, and the mixture was uniformly mixed.Additionally, ethanol was further added, and a cadmium selenide was applied by a centrifuge at 1500 G for 10 minutes. The particles were allowed to settle. Next, 3.7 g (0.02 M) of zinc acetate and 100 g of stearic acid were mixed with the cadmium selenide particles and dissolved at 130 ° C. To this solution was added 400 g of trioctylphosphinoxide (TOPO).
- TOPO trioctylphosphinoxide
- the ultrafine particles of selenium cadmium semiconductor obtained by collecting the precipitate were confirmed by TEM to have an average particle diameter of 4 nm.
- this cadmium selenide semiconductor ultrafine The fluorescent color when the line was applied was yellow.
- the center wavelength of the fluorescence peak was 580 nm.
- the selenium cadmium semiconductor ultrafine particles 3 obtained as described above were weighed in three portions of 2 mg each, and the amine group, the mercapto group, and the carboxyl group represented by the chemical formula (a) were added thereto.
- 2 g each of a silicone compound having a silicon-oxygen bond in the main chain having a functional group, an amide group, or a butyl group in the main chain, and having a methyl-free side chain as a functional group was obtained.
- the number of repeating units of silicon-oxygen bonds of this silicone compound was 250, and the number n of side chains having a functional group was 5.
- this nanoparticle structure After vacuum drying this nanoparticle structure, it was mixed with a two-part thermosetting silicone resin to obtain a liquid, uncured, uncured product. This was poured into a fluorescence measuring cell having a thickness of 10 mm, and was heated and cured at 80 ° C. for 2 hours to obtain a cured wavelength conversion layer. Each of these wavelength conversion layers emitted a yellow color when exposed to ultraviolet light.
- cadmium selenide particles having a core-shell structure before treatment with the above-mentioned silicone compound was weighed out, and 20 g of tonoleene was added thereto.
- the surface of the cadmium selenide particles is coordinated with TOPO, which is used as a solvent in the process of producing semiconductor ultrafine particles.
- the following compound having only one silicon-oxygen bond was added to a mixed solution of semiconductor fine particles dispersed in a mixed solution of ethanol and water, dried, and compared with the surface of the semiconductor fine particles.
- semiconductor ultrafine particles of Comparative Examples were prepared. The ultrafine semiconductor particles of this comparative example were weighed out in an amount of 0.1 Olg, and 20 g of Tonolen was added thereto.
- Samples Nos. 36 and 37 in Table 4 are comparative examples outside the scope of the present invention.
- the fluorescence intensity immediately after preparation of the toluene solution was 0.9.
- the fluorescence intensity was 0.7 in Sample No. 37, and was 0.7 after 14 days.
- Sample No. 38 was prepared by weighing out 0.1 Olg of the ultrafine particle structure 1 produced in the same manner as in Sample No. 31, and adding 20 g of toluene thereto.
- the fluorescence intensity was 0.9 immediately after the preparation of the toluene solution and 14 days after the preparation of the toluene solution, and no decrease in the fluorescence intensity was observed.
- the measurement of the wavelength and the intensity of the fluorescence was performed using PF-5300PC manufactured by Shimadzu Corporation.
- Sample No. 39 is the same sample as sample No. 31 in Table 3.
- the side chain without a functional group of sample No. 40 was an ethyl group and the side chain without a functional group of sample No. 41 was n- All of the propyl groups had a fluorescence intensity of 0.9.
- a light-emitting element having a central emission wavelength of 395 nm was mounted on an alumina substrate by a flip-chip mounting method.
- An ultrafine particle structure in which a compound whose functional group is an amine group and the side chain of which has no functional group is a methyl group is coordinated with cadmium selenide semiconductor ultrafine particles, and an average particle size (Sr, Ca, Ba, Mg) 10 (P ⁇ 4) 6C12: Eu and BaMgAU0 ⁇ 17: Eu with an average particle size of 3 zm are dispersed in silicone resin to produce a plurality of wavelength conversion layers.
- a light emitting device was obtained by covering and bonding the light emitting element so as to cover it. The luminous efficiency of this light emitting device was 501 mZW.
- a light-emitting device was produced by using a mixture of ultra-fine particles of selenium-cadmium semiconductor in a silicone resin without using a silicone-bonded product and forming a film having a thickness of 1 mm. This had a luminous efficiency of 30 Lm / W.
- FIG. 1 is a schematic sectional view showing one embodiment of a light emitting device of the present invention.
- FIG. 2 is a schematic sectional view showing another embodiment according to the light emitting device of the present invention.
- FIG. 3 (a) is a schematic cross-sectional view schematically showing one example of a nanoparticle structure according to the present invention
- FIG. 3 (b) is a partially enlarged schematic view thereof.
- FIG. 4 is an explanatory diagram showing a molecular structure of a compound used for a nanoparticle structure of the present invention.
- FIG. 5 is a cross-sectional view schematically showing a composite according to the present invention.
- FIG. 6 is a schematic sectional view showing an example of the structure of a conventional light emitting device.
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Abstract
Description
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JP2005517312A JP4653662B2 (ja) | 2004-01-26 | 2005-01-26 | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
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US7850359B2 (en) | 2007-12-28 | 2010-12-14 | Au Optronics Corp. | Optical film of a display, method for producing the same and said display |
US7887206B2 (en) | 2006-08-22 | 2011-02-15 | Lg Display Co., Ltd. | Optical unit, backlight assembly with the optical unit, and display device with the backlight assembly |
JP2011519173A (ja) * | 2008-04-29 | 2011-06-30 | ショット アクチエンゲゼルシャフト | (w)led用光コンバータ・システム |
JP2012036265A (ja) * | 2010-08-05 | 2012-02-23 | Sharp Corp | 照明装置 |
JP2012204609A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Metal Mining Co Ltd | 量子ドット太陽光led用積層体 |
JP2012525717A (ja) * | 2009-04-28 | 2012-10-22 | キユーデイー・ビジヨン・インコーポレーテツド | 光学材料、光学部品および方法 |
US8513872B2 (en) | 2010-08-05 | 2013-08-20 | Sharp Kabushiki Kaisha | Light emitting apparatus and method for manufacturing thereof |
US8749130B2 (en) | 2004-01-15 | 2014-06-10 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
US8908740B2 (en) | 2006-02-14 | 2014-12-09 | Nichia Corporation | Light emitting device |
US8916064B2 (en) | 2009-05-01 | 2014-12-23 | Nanosys, Inc. | Functionalized matrices for dispersion of nanostructures |
JP2016505212A (ja) * | 2012-10-25 | 2016-02-18 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | シリコーン内の量子ドット用pdms系リガンド |
JP2016040842A (ja) * | 2015-11-04 | 2016-03-24 | Nsマテリアルズ株式会社 | Led素子、その製造方法、及びled素子の色調補正方法 |
CN106661229A (zh) * | 2014-07-16 | 2017-05-10 | 纳米***公司 | 用于量子点的有机硅配体 |
JP2017514299A (ja) * | 2014-03-18 | 2017-06-01 | ナノコ テクノロジーズ リミテッド | 量子ドット組成物 |
JP2017515922A (ja) * | 2014-03-10 | 2017-06-15 | スリーエム イノベイティブ プロパティズ カンパニー | チオール置換シリコーンを含む複合ナノ粒子 |
JP2017163151A (ja) * | 2012-04-05 | 2017-09-14 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | フルスペクトル発光装置 |
JP2017198983A (ja) * | 2016-04-22 | 2017-11-02 | パナソニック株式会社 | 波長変換部材および投光器 |
JP2017533875A (ja) * | 2014-08-11 | 2017-11-16 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co. KGaA | 反応性コロイド状ナノ結晶及びナノ結晶複合体 |
KR20190038473A (ko) * | 2016-08-05 | 2019-04-08 | 니폰 덴키 가라스 가부시키가이샤 | 파장 변환 부재 및 그 제조 방법 |
KR20190119434A (ko) * | 2018-04-12 | 2019-10-22 | 삼성전자주식회사 | 발광 복합체, 발광 구조체, 광학 시트 및 전자 소자 |
JP2020068365A (ja) * | 2018-10-26 | 2020-04-30 | 住友化学株式会社 | 組成物、フィルム、積層構造体、発光装置及びディスプレイ |
CN111213075A (zh) * | 2017-11-21 | 2020-05-29 | 日本电气硝子株式会社 | 波长变换部件和发光装置 |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7775685B2 (en) * | 2003-05-27 | 2010-08-17 | Cree, Inc. | Power surface mount light emitting die package |
JP4618721B2 (ja) * | 2004-09-30 | 2011-01-26 | 日東電工株式会社 | 光学素子及びこれを用いた偏光面光源並びにこれを用いた表示装置 |
US7980743B2 (en) * | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
KR101266130B1 (ko) * | 2005-06-23 | 2013-05-27 | 렌슬러 폴리테크닉 인스티튜트 | 단파장 led들 및 다운-컨버젼 물질들로 백색광을생성하기 위한 패키지 설계 |
US20060292747A1 (en) * | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
DE102006020529A1 (de) * | 2005-08-30 | 2007-03-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP4931628B2 (ja) * | 2006-03-09 | 2012-05-16 | セイコーインスツル株式会社 | 照明装置及びこれを備える表示装置 |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
US7863635B2 (en) * | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
JP2010541198A (ja) * | 2007-09-20 | 2010-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | コリメータ |
US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
KR20100099254A (ko) * | 2007-12-10 | 2010-09-10 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반도체 발광 소자 및 이의 제조 방법 |
KR101429704B1 (ko) * | 2008-01-31 | 2014-08-12 | 삼성디스플레이 주식회사 | 파장변환 부재, 이를 포함하는 광원 어셈블리 및 액정 표시장치 |
KR101442146B1 (ko) * | 2008-02-25 | 2014-09-23 | 삼성디스플레이 주식회사 | 광원 유닛, 이를 포함하는 액정 표시 장치 및 이의 제조방법 |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
US7868340B2 (en) * | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
US7955875B2 (en) * | 2008-09-26 | 2011-06-07 | Cree, Inc. | Forming light emitting devices including custom wavelength conversion structures |
WO2010055831A1 (ja) * | 2008-11-13 | 2010-05-20 | 国立大学法人名古屋大学 | 半導体発光装置 |
US7804103B1 (en) * | 2009-01-07 | 2010-09-28 | Lednovation, Inc. | White lighting device having short wavelength semiconductor die and trichromatic wavelength conversion layers |
GB2467161A (en) * | 2009-01-26 | 2010-07-28 | Sharp Kk | Nitride nanoparticles |
GB2467162A (en) | 2009-01-26 | 2010-07-28 | Sharp Kk | Fabrication of nitride nanoparticles |
US8547009B2 (en) * | 2009-07-10 | 2013-10-01 | Cree, Inc. | Lighting structures including diffuser particles comprising phosphor host materials |
WO2011102272A1 (ja) * | 2010-02-19 | 2011-08-25 | 東レ株式会社 | 蛍光体含有シリコーン硬化物、その製造方法、蛍光体含有シリコーン組成物、その組成物前駆体、シート状成型物、ledパッケージ、発光装置およびled実装基板の製造方法 |
JP4949525B2 (ja) * | 2010-03-03 | 2012-06-13 | シャープ株式会社 | 波長変換部材、発光装置および画像表示装置ならびに波長変換部材の製造方法 |
JP2011210891A (ja) * | 2010-03-29 | 2011-10-20 | Hitachi Chem Co Ltd | 波長変換型太陽電池封止シート、及び太陽電池モジュール |
US9062853B2 (en) * | 2010-07-12 | 2015-06-23 | National University Corporation Nagoya University | Broadband infrared light emitting device |
DE102010044985B4 (de) * | 2010-09-10 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Aufbringen eines Konversionsmittels auf einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil |
WO2012044887A1 (en) * | 2010-09-30 | 2012-04-05 | Performance Indicator, Llc. | Photolytically and environmentally stable multilayer structure for high efficiency electromagentic energy conversion and sustained secondary emission |
US8664624B2 (en) | 2010-09-30 | 2014-03-04 | Performance Indicator Llc | Illumination delivery system for generating sustained secondary emission |
DE102010054279A1 (de) * | 2010-12-13 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Strahlungskonversionselements, Strahlungskonversionselement und optoelektronisches Bauelement enthaltend ein Strahlungskonversionselement |
WO2012081411A1 (ja) | 2010-12-13 | 2012-06-21 | 東レ株式会社 | 蛍光体シート、これを用いたledおよび発光装置ならびにledの製造方法 |
CN103384794B (zh) | 2010-12-23 | 2018-05-29 | 三星电子株式会社 | 包含量子点的光学元件 |
US8937332B2 (en) * | 2011-02-04 | 2015-01-20 | Osram Sylvania Inc. | Wavelength converter for an LED and LED containing same |
US8742654B2 (en) * | 2011-02-25 | 2014-06-03 | Cree, Inc. | Solid state light emitting devices including nonhomogeneous luminophoric particle size layers |
KR101241511B1 (ko) * | 2011-03-22 | 2013-03-11 | 엘지이노텍 주식회사 | 광 변환 부재 및 이를 포함하는 표시장치 |
US8455898B2 (en) * | 2011-03-28 | 2013-06-04 | Osram Sylvania Inc. | LED device utilizing quantum dots |
US8780295B2 (en) * | 2011-03-28 | 2014-07-15 | Tsmc Solid State Lighting Ltd. | Light cavity that improves light output uniformity |
US8957438B2 (en) | 2011-04-07 | 2015-02-17 | Cree, Inc. | Methods of fabricating light emitting devices including multiple sequenced luminophoric layers |
DE102011100728A1 (de) * | 2011-05-06 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
CN102810618B (zh) * | 2011-06-02 | 2015-04-29 | 展晶科技(深圳)有限公司 | 半导体封装结构 |
DE102011078402A1 (de) | 2011-06-30 | 2013-01-03 | Osram Ag | Konversionselement und Leuchtdiode mit einem solchen Konversionselement |
KR20130015847A (ko) * | 2011-08-05 | 2013-02-14 | 삼성전자주식회사 | 발광장치, 백라이트 유닛과 디스플레이 장치 및 그 제조방법 |
TWI505515B (zh) * | 2011-08-19 | 2015-10-21 | Epistar Corp | 發光裝置及其製造方法 |
KR20130046974A (ko) * | 2011-10-28 | 2013-05-08 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
JP5545601B2 (ja) * | 2011-11-07 | 2014-07-09 | 信越化学工業株式会社 | 蛍光体高充填波長変換シート、それを用いた発光半導体装置の製造方法、及び該発光半導体装置 |
WO2013190962A1 (ja) * | 2012-06-18 | 2013-12-27 | シャープ株式会社 | 半導体発光装置 |
CN104508854B (zh) * | 2012-07-31 | 2017-12-01 | 株式会社Lg化学 | 用于有机电子器件的基板 |
WO2014028019A1 (en) * | 2012-08-16 | 2014-02-20 | Empire Technology Development Llc | Graded fluorescent material |
JP6107001B2 (ja) * | 2012-09-04 | 2017-04-05 | ソニー株式会社 | シンチレータ及び放射線検出装置 |
JP2014056896A (ja) * | 2012-09-11 | 2014-03-27 | Ns Materials Kk | 半導体を利用した発光デバイス及びその製造方法 |
DE102012109217A1 (de) * | 2012-09-28 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung zum Erzeugen einer Lichtemission und Verfahren zum Erzeugen einer Lichtemission |
CN103811637B (zh) * | 2012-11-05 | 2018-01-30 | 晶元光电股份有限公司 | 波长转换材料及其应用 |
US8754435B1 (en) | 2013-02-19 | 2014-06-17 | Cooledge Lighting Inc. | Engineered-phosphor LED package and related methods |
US8933478B2 (en) | 2013-02-19 | 2015-01-13 | Cooledge Lighting Inc. | Engineered-phosphor LED packages and related methods |
JP2014175362A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
BR112015030722A2 (pt) | 2013-06-10 | 2017-07-25 | Asahi Kasei E Mat Corporation | aparelho emissor de luz semicondutor |
WO2015020859A2 (en) * | 2013-08-05 | 2015-02-12 | Corning Incorporated | Luminescent coatings and devices |
US9797573B2 (en) | 2013-08-09 | 2017-10-24 | Performance Indicator, Llc | Luminous systems |
JP6237174B2 (ja) | 2013-12-05 | 2017-11-29 | 日亜化学工業株式会社 | 発光装置 |
CN106164219B (zh) | 2014-04-02 | 2019-03-01 | 3M创新有限公司 | 包含硫醚配体的复合纳米粒子 |
US9660151B2 (en) * | 2014-05-21 | 2017-05-23 | Nichia Corporation | Method for manufacturing light emitting device |
TWI690630B (zh) * | 2014-08-11 | 2020-04-11 | 德商漢高股份有限及兩合公司 | 叢生奈米晶體網狀物與奈米晶體合成物 |
TWI690585B (zh) * | 2014-08-11 | 2020-04-11 | 德商漢高股份有限及兩合公司 | 電激發光之經交聯奈米晶體薄膜 |
TWI622190B (zh) * | 2014-11-18 | 2018-04-21 | 錼創科技股份有限公司 | 發光元件 |
JP6354626B2 (ja) * | 2015-03-09 | 2018-07-11 | 豊田合成株式会社 | 発光装置の製造方法 |
TWI786500B (zh) * | 2015-05-05 | 2022-12-11 | 新世紀光電股份有限公司 | 發光裝置及其製作方法 |
CA2991319A1 (en) | 2015-07-08 | 2017-01-12 | Performance Indicator, Llc | Led panel lighting system |
JP6644081B2 (ja) * | 2015-11-04 | 2020-02-12 | シャープ株式会社 | 発光装置、照明装置、および発光装置が備える発光体の製造方法 |
WO2017134994A1 (ja) | 2016-02-02 | 2017-08-10 | シチズン電子株式会社 | 発光装置およびその製造方法 |
JP6447557B2 (ja) * | 2016-03-24 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6650951B2 (ja) * | 2016-04-25 | 2020-02-19 | 日本特殊陶業株式会社 | 波長変換部材、その製造方法および発光装置 |
US10727050B1 (en) | 2016-06-15 | 2020-07-28 | Northrop Grumman Systems Corporation | Wafer-scale catalytic deposition of black phosphorus |
KR101905153B1 (ko) * | 2017-03-22 | 2018-10-08 | 한국화학연구원 | 적외선 발광 광소자 및 이의 제조방법 |
JP7248379B2 (ja) * | 2017-07-24 | 2023-03-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102017121185A1 (de) * | 2017-09-13 | 2019-03-14 | Osram Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102019125411A1 (de) * | 2019-09-20 | 2021-03-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
KR20220036681A (ko) * | 2020-09-16 | 2022-03-23 | 삼성전자주식회사 | 디스플레이 장치 및 그 제조 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000324937A (ja) * | 1999-05-21 | 2000-11-28 | Mitsubishi Agricult Mach Co Ltd | コンバインにおける可動扱室の支持構造 |
JP2002121548A (ja) * | 2000-10-13 | 2002-04-26 | Mitsubishi Chemicals Corp | エタノール可溶性半導体超微粒子の製造方法 |
JP2002314142A (ja) * | 2001-04-09 | 2002-10-25 | Toyoda Gosei Co Ltd | 発光装置 |
WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
JP2003243727A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811924A (en) * | 1995-09-19 | 1998-09-22 | Kabushiki Kaisha Toshiba | Fluorescent lamp |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
JP4126751B2 (ja) * | 1998-05-26 | 2008-07-30 | ソニー株式会社 | 表示装置および照明装置 |
JP3486345B2 (ja) * | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
JP4404489B2 (ja) * | 1998-09-18 | 2010-01-27 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
JP3677538B2 (ja) * | 2001-01-16 | 2005-08-03 | 独立行政法人産業技術総合研究所 | 超微粒子分散ガラス及びこれを用いた表示素子 |
MY131962A (en) * | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP2003025299A (ja) * | 2001-07-11 | 2003-01-29 | Hitachi Software Eng Co Ltd | 半導体ナノ粒子及びその製造方法 |
US7414009B2 (en) * | 2001-12-21 | 2008-08-19 | Showa Denko K.K. | Highly active photocatalyst particles, method of production therefor, and use thereof |
JP2003286292A (ja) * | 2002-01-28 | 2003-10-10 | Mitsubishi Chemicals Corp | 半導体超微粒子及びそれを含有してなる薄膜状成形体 |
JP4005850B2 (ja) * | 2002-06-10 | 2007-11-14 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子製造方法 |
US7279832B2 (en) * | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
KR100691143B1 (ko) * | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
US7265488B2 (en) * | 2004-09-30 | 2007-09-04 | Avago Technologies General Ip Pte. Ltd | Light source with wavelength converting material |
-
2005
- 2005-01-26 TW TW094102228A patent/TW200531315A/zh unknown
- 2005-01-26 JP JP2005517312A patent/JP4653662B2/ja active Active
- 2005-01-26 US US10/597,470 patent/US20080231170A1/en not_active Abandoned
- 2005-01-26 WO PCT/JP2005/000972 patent/WO2005071039A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000324937A (ja) * | 1999-05-21 | 2000-11-28 | Mitsubishi Agricult Mach Co Ltd | コンバインにおける可動扱室の支持構造 |
JP2002121548A (ja) * | 2000-10-13 | 2002-04-26 | Mitsubishi Chemicals Corp | エタノール可溶性半導体超微粒子の製造方法 |
JP2002314142A (ja) * | 2001-04-09 | 2002-10-25 | Toyoda Gosei Co Ltd | 発光装置 |
WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
JP2003243727A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置 |
Non-Patent Citations (1)
Title |
---|
LEE J. ET AL: "Full Color Emission from II-VI Semiconductor Quantum Dot-Polymer Composites.", ADV. MATER., vol. 12, no. 15, 2 August 2000 (2000-08-02), pages 1102 - 1105, XP000963569 * |
Cited By (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8425803B2 (en) | 2004-01-15 | 2013-04-23 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
US8592037B2 (en) | 2004-01-15 | 2013-11-26 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
US8749130B2 (en) | 2004-01-15 | 2014-06-10 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
US7560859B2 (en) | 2004-09-14 | 2009-07-14 | Shizuo Fujita | Fluorescent material having two layer structure and light emitting apparatus employing the same |
JP2007103513A (ja) * | 2005-09-30 | 2007-04-19 | Kyocera Corp | 発光装置 |
JP2007103512A (ja) * | 2005-09-30 | 2007-04-19 | Kyocera Corp | 発光装置 |
JP2007123390A (ja) * | 2005-10-26 | 2007-05-17 | Kyocera Corp | 発光装置 |
JP2007149909A (ja) * | 2005-11-28 | 2007-06-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2007173755A (ja) * | 2005-11-28 | 2007-07-05 | Kyocera Corp | 蛍光体粒子および波長変換器ならびに発光装置 |
JP2007157798A (ja) * | 2005-11-30 | 2007-06-21 | Kyocera Corp | 発光装置 |
JP4596267B2 (ja) * | 2006-02-14 | 2010-12-08 | 日亜化学工業株式会社 | 発光装置 |
JP2007220326A (ja) * | 2006-02-14 | 2007-08-30 | Nichia Chem Ind Ltd | 発光装置 |
US8908740B2 (en) | 2006-02-14 | 2014-12-09 | Nichia Corporation | Light emitting device |
JP2007220750A (ja) * | 2006-02-14 | 2007-08-30 | Fujitsu Ltd | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 |
JP2007221044A (ja) * | 2006-02-20 | 2007-08-30 | Kyocera Corp | 発光装置 |
JP2007266170A (ja) * | 2006-03-28 | 2007-10-11 | Kyocera Corp | 蛍光体の製造方法および波長変換器ならびに発光装置 |
JP2007273498A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | 波長変換器および発光装置 |
US8138666B2 (en) * | 2006-06-02 | 2012-03-20 | Sharp Kabushiki Kaisha | Wavelength conversion member and light-emitting device |
US20070278935A1 (en) * | 2006-06-02 | 2007-12-06 | Sharp Kabushiki Kaisha | Wavelength conversion member and light-emitting device |
JP2009541750A (ja) * | 2006-06-26 | 2009-11-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光導体を備える構成体 |
JP2009544805A (ja) * | 2006-07-24 | 2009-12-17 | ナノシス・インク. | ナノ結晶でドープしたマトリックス |
US7887206B2 (en) | 2006-08-22 | 2011-02-15 | Lg Display Co., Ltd. | Optical unit, backlight assembly with the optical unit, and display device with the backlight assembly |
JP2008112864A (ja) * | 2006-10-30 | 2008-05-15 | Matsushita Electric Works Ltd | 発光装置 |
JP2008115332A (ja) * | 2006-11-07 | 2008-05-22 | Mitsubishi Chemicals Corp | 蛍光体含有組成物、発光装置、照明装置および画像表示装置 |
US7902564B2 (en) | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
WO2008078285A2 (en) * | 2006-12-22 | 2008-07-03 | Philips Intellectual Property & Standards Gmbh | Multi-grain luminescent ceramics for light emitting devices |
WO2008078285A3 (en) * | 2006-12-22 | 2008-09-12 | Philips Intellectual Property | Multi-grain luminescent ceramics for light emitting devices |
JP5136548B2 (ja) * | 2007-03-29 | 2013-02-06 | コニカミノルタエムジー株式会社 | 蛍光体標識化合物 |
WO2008123291A1 (ja) * | 2007-03-29 | 2008-10-16 | Konica Minolta Medical & Graphic, Inc. | 蛍光体標識化合物 |
JP2009043903A (ja) * | 2007-08-08 | 2009-02-26 | Stanley Electric Co Ltd | Led光源 |
JP2009094351A (ja) * | 2007-10-10 | 2009-04-30 | Nichia Corp | 発光装置およびその製造方法 |
KR101521318B1 (ko) * | 2007-11-19 | 2015-05-19 | 왕낭 왕 | 발광다이오드 칩 열 관리 및 제조 방법 |
WO2009066099A1 (en) * | 2007-11-19 | 2009-05-28 | Wang Nang Wang | Led chip thermal management and fabrication methods |
US7850359B2 (en) | 2007-12-28 | 2010-12-14 | Au Optronics Corp. | Optical film of a display, method for producing the same and said display |
JP2009170825A (ja) * | 2008-01-19 | 2009-07-30 | Nichia Corp | 発光装置及びその製造方法 |
JP2009206459A (ja) * | 2008-02-29 | 2009-09-10 | Sharp Corp | 色変換部材およびそれを用いた発光装置 |
JP2011519173A (ja) * | 2008-04-29 | 2011-06-30 | ショット アクチエンゲゼルシャフト | (w)led用光コンバータ・システム |
JP2010087465A (ja) * | 2008-10-01 | 2010-04-15 | Silitek Electronic (Guangzhou) Co Ltd | 発光ダイオード装置及びその製作方法 |
JP2012525717A (ja) * | 2009-04-28 | 2012-10-22 | キユーデイー・ビジヨン・インコーポレーテツド | 光学材料、光学部品および方法 |
US8916064B2 (en) | 2009-05-01 | 2014-12-23 | Nanosys, Inc. | Functionalized matrices for dispersion of nanostructures |
JP2010153924A (ja) * | 2010-04-02 | 2010-07-08 | Dowa Electronics Materials Co Ltd | 発光装置及びその製造方法 |
US8513872B2 (en) | 2010-08-05 | 2013-08-20 | Sharp Kabushiki Kaisha | Light emitting apparatus and method for manufacturing thereof |
JP2012036265A (ja) * | 2010-08-05 | 2012-02-23 | Sharp Corp | 照明装置 |
JP2012204609A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Metal Mining Co Ltd | 量子ドット太陽光led用積層体 |
JP2017163151A (ja) * | 2012-04-05 | 2017-09-14 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | フルスペクトル発光装置 |
JP2016505212A (ja) * | 2012-10-25 | 2016-02-18 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | シリコーン内の量子ドット用pdms系リガンド |
JP2017515922A (ja) * | 2014-03-10 | 2017-06-15 | スリーエム イノベイティブ プロパティズ カンパニー | チオール置換シリコーンを含む複合ナノ粒子 |
JP2017514299A (ja) * | 2014-03-18 | 2017-06-01 | ナノコ テクノロジーズ リミテッド | 量子ドット組成物 |
CN106661229A (zh) * | 2014-07-16 | 2017-05-10 | 纳米***公司 | 用于量子点的有机硅配体 |
CN106661229B (zh) * | 2014-07-16 | 2021-02-09 | 纳米***公司 | 用于量子点的有机硅配体 |
JP2017533875A (ja) * | 2014-08-11 | 2017-11-16 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co. KGaA | 反応性コロイド状ナノ結晶及びナノ結晶複合体 |
JP2016040842A (ja) * | 2015-11-04 | 2016-03-24 | Nsマテリアルズ株式会社 | Led素子、その製造方法、及びled素子の色調補正方法 |
JP2017198983A (ja) * | 2016-04-22 | 2017-11-02 | パナソニック株式会社 | 波長変換部材および投光器 |
KR20190038473A (ko) * | 2016-08-05 | 2019-04-08 | 니폰 덴키 가라스 가부시키가이샤 | 파장 변환 부재 및 그 제조 방법 |
KR102315746B1 (ko) | 2016-08-05 | 2021-10-20 | 니폰 덴키 가라스 가부시키가이샤 | 파장 변환 부재 및 그 제조 방법 |
CN111213075A (zh) * | 2017-11-21 | 2020-05-29 | 日本电气硝子株式会社 | 波长变换部件和发光装置 |
KR20190119434A (ko) * | 2018-04-12 | 2019-10-22 | 삼성전자주식회사 | 발광 복합체, 발광 구조체, 광학 시트 및 전자 소자 |
KR102586937B1 (ko) * | 2018-04-12 | 2023-10-06 | 삼성전자주식회사 | 발광 복합체, 발광 구조체, 광학 시트 및 전자 소자 |
JP2020068365A (ja) * | 2018-10-26 | 2020-04-30 | 住友化学株式会社 | 組成物、フィルム、積層構造体、発光装置及びディスプレイ |
JP7179581B2 (ja) | 2018-10-26 | 2022-11-29 | 住友化学株式会社 | 組成物、フィルム、積層構造体、発光装置及びディスプレイ |
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JP4653662B2 (ja) | 2011-03-16 |
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