WO2004063809A1 - 光導波路デバイスならびにそれを用いたコヒーレント光源およびそれを備えた光学装置 - Google Patents
光導波路デバイスならびにそれを用いたコヒーレント光源およびそれを備えた光学装置 Download PDFInfo
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- WO2004063809A1 WO2004063809A1 PCT/JP2003/016488 JP0316488W WO2004063809A1 WO 2004063809 A1 WO2004063809 A1 WO 2004063809A1 JP 0316488 W JP0316488 W JP 0316488W WO 2004063809 A1 WO2004063809 A1 WO 2004063809A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Definitions
- the present invention relates to an optical waveguide device used in optical information processing and optical applied measurement control fields, a coherent light source using the same, and an optical device including the same.
- higher density can be realized by using a shorter wavelength light source.
- the popular compact disk drive uses near-infrared light of 780 nm
- the digital versatile disk (DVD) that realizes higher-density information reproduction uses a red semiconductor laser of 650 nm. Used.
- a blue laser light source having a shorter wavelength has been actively developed.
- a wavelength conversion element using a nonlinear optical material as a small and stable blue laser light source has been developed.
- a QPM (quasi-phase matching) -SHG (second harmonic generation) device using a periodic domain-inverted structure can perform highly efficient wavelength conversion.
- the tolerance of the conversion wavelength is very narrow, it is necessary to devise a method to fix the wavelength of the pump light source to the phase matching wavelength in order to obtain stable light source characteristics.
- semiconductor lasers have a wide gain and the oscillation wavelength fluctuates easily, a technique for stabilizing the wavelength is important.
- the phase matching wavelength is the wavelength of the fundamental wave when the fundamental wave propagated through the domain-inverted structure is converted into a harmonic.
- the oscillation wavelength of a semiconductor laser is fixed to the reflection wavelength of a DBR grating by optical feedback using a DBR grating having wavelength selectivity.
- a DBR dray- ting structure is formed on the optical waveguide.
- the DBR grating may be formed on the optical waveguide by using a method such as etching or resist grating. In such a configuration, by returning the reflected light from the DBR grating to the semiconductor laser, the oscillation wavelength of the semiconductor laser can be fixed to this reflected wavelength.
- KTP crystal with R b When the ion exchange is performed, the polarization is reversed, and at the same time, the refractive index of the ion exchange portion increases. By utilizing this, a domain-inverted structure can be formed, and a QPM structure and DBR grating can be formed. As a result, a short wavelength light source has been realized.
- the above-mentioned domain-inverted structure realizes a change in the refractive index simultaneously with the domain-inverted structure due to a change in the crystal composition.
- the method of forming the domain-inverted structure was based on metal diffusion and ion exchange.
- such a change in the composition of the crystal causes deterioration of the crystal itself, causing problems such as deterioration of the crystal and a decrease in the light damage resistance, and enables high-efficiency, high-output light to propagate.
- the method cannot be applied to optical waveguide devices.
- a domain-inverted structure formed by diffusion in a L i ⁇ [13 ⁇ 3 crystal can be used as a DBR grating by increasing the refractive index.
- L i N B_ ⁇ 3 poled by T i diffusion in the substrate depth of the polarization inversion is not sufficient to form a particularly 4 0 0 nm vicinity following cycle 3 m below the polarization inversion structure required wavelength There is a problem that is difficult.
- Ti when Ti is diffused, there is a problem that the impurity concentration in the optical waveguide increases and the light damage resistance decreases. For this reason, there was the problem that the output became unstable when the output was reduced to several mW or more.
- the method of forming polarization reversal using initial ion exchange or metal diffusion as described above is changing to a method of producing a domain reversal structure by applying a high electric field pulse with a pattern electrode. Specifically, by applying a high-voltage pulse to the ferroelectric through a pattern electrode, a uniform domain-inverted structure can be formed without changing the crystal composition, and a domain-inverted shape with a high aspect ratio can be obtained. Can be formed.
- the optical waveguide device of the present invention a coherent light source using the optical waveguide device, and an optical device including the same have an object to provide a highly efficient and stable short-wavelength light source in view of the above problems.
- An optical waveguide device includes: a substrate made of a nonlinear optical material; A periodic domain-inverted structure having the same composition as the substrate; and the domain-inverted structure has a refractive index distribution depending on the structure.
- the domain-inverted structure is formed by applying a voltage in a polarization direction of the substrate. As a result, a change in the composition of the crystal does not occur, so that an optical waveguide device with high efficiency and high output can be realized.
- the substrate made of the nonlinear optical material is an off-cut substrate.
- a DBR grating structure due to a change in refractive index is formed, despite having a domain-inverted structure formed by applying an electric field.
- the off-cut angle of the substrate is 1 ° with respect to the substrate surface.
- the substrate is a thin film, and has an optical substrate bonded to one surface of the substrate via a bonding layer.
- the reflectivity from DBR dating increases.
- At least one of the front surface and the back surface of the substrate has a convex portion, and the domain-inverted structure is formed in a stripe shape on the convex portion.
- a ridge-type optical waveguide device is obtained, so that the crystal distortion formed by the polarization inversion is not affected, and the refractive index change can be maintained. Therefore, high DBR reflection can be realized, and DBR grating efficiency is high.
- the non-linear optical material is a Mg-doped L i Nb (x) T a x ⁇ 3 (0 ⁇ 1).
- the nonlinear optical material is a Mg-doped LiNbO 3 crystal
- the phase matching wavelength coincides with the Plug reflection wavelength
- the Bragg reflection wavelength ⁇ has a relationship of ⁇ ⁇ H ⁇ 2 .
- the non-linear optical material is a L i N B_ ⁇ 3 crystal doped with Mg
- the phase matching wavelength matches the Bragg reflection wavelength
- a harmonic can be generated.
- the domain-inverted structure includes a wavelength conversion unit and a DBR unit,
- the phase matching wavelength of the wavelength conversion unit is equal to the Bragg reflection wavelength of the DBR unit, and the difference between the phase matching wavelength of the wavelength conversion unit and the Bragg reflection wavelength of the wavelength conversion unit is 5 nm or more. .
- the Bragg reflection wavelength ⁇ and the phase matching wavelength match, it is possible to generate higher harmonics.
- a coherent light source according to the present invention includes a semiconductor laser and the above-described optical waveguide device, and light emitted from the semiconductor laser is incident on the optical waveguide device. As a result, highly efficient and stable short-wavelength light is emitted. A coherent light source that can be realized.
- an optical device includes the above-described coherent light source.
- an optical device having a high-output coherent light source can be realized.
- FIG. 1 is a perspective view showing a configuration of a coherent light source using the optical waveguide device according to the first embodiment.
- FIG. 2A is a process drawing for forming a periodically poled structure.
- FIG. 2B is a process chart for forming a periodically poled structure.
- FIG. 2C is a process chart for forming a periodically poled structure.
- FIG. 2D is a process drawing for forming a periodic domain-inverted structure.
- FIG. 3A is a process chart for forming a ridge-type optical waveguide structure.
- FIG. 3B is a process chart for forming a ridge-type optical waveguide structure.
- FIG. 3C is a process chart for forming a ridge-type optical waveguide structure.
- FIG. 4 is a perspective view showing another configuration example of the coherent light source using the optical waveguide device according to the first embodiment.
- FIG. 5 is a perspective view showing a configuration of a coherent light source using the optical waveguide device according to the second embodiment.
- FIG. 6 is a schematic diagram showing a configuration of the optical device according to the third embodiment. BEST MODE FOR CARRYING OUT THE INVENTION
- the reversal of polarization in a ferroelectric is caused by a change in the crystal structure in a crystal. Does not occur. It has also been reported that when polarization reversal is performed by applying an electric field, the internal electric field remains, causing a temporary change in the refractive index due to the electro-optic effect. The change in refractive index is temporary and disappears with time. In addition, the refractive index change disappeared in a relatively low-temperature process of about 100 ° C., which was unstable.
- FIG. 1 is a configuration diagram of a coherent light source using the optical waveguide device according to the first embodiment.
- the coherent light source 100 of the first embodiment includes a semiconductor laser 101 and an optical waveguide device 108 as an optical wavelength conversion element.
- the optical waveguide device 1 0 8 the off-cut of M g de-loop L i N B_ ⁇ 3 thin layer 1 0 3 crystal is formed are adhered via a bonding layer 1 0 4 on the LN substrate 1 0 2 ing. Stripe-shaped protrusions 106 are formed in the thin film layer 103.
- the optical waveguide device 108 has a so-called ridge-type optical waveguide structure in which the convex portion 106 is used as a ridge waveguide.
- a periodic domain-inverted region 105 is formed in the thin film layer 103. Since an off-power substrate is used for the thin film layer 103, the polarization direction 107 of the domain-inverted region 105 is inclined with respect to the surface of the thin film layer 103.
- the semiconductor laser 101 for example, a Fabry-Perot-type A 1 GaAs semiconductor laser is used.
- the domain-inverted region 105 has a domain-inverted period of about 2.8 m and a phase matching wavelength of about 820 nm.
- the domain-inverted region 105 has a periodic refractive index distribution and exhibits DBR grating characteristics.
- Light emitted from the semiconductor laser 101 enters the optical waveguide device 108, is wavelength-selected by the domain-inverted region 105, and returns to the semiconductor laser 101.
- the emitted light of the semiconductor laser 101 is fixed at one of the DBR reflection wavelengths of the domain-inverted region 105 and at a wavelength of 820 nm near the oscillation gain of the semiconductor laser 101.
- the coherent light source 100 emits highly efficient and stable short-wavelength light.
- the domain-inverted region 105 exhibiting the DBR grating characteristic by making the phase matching wavelength coincide with the DBR reflection wavelength, stable wavelength conversion of the light emitted from the semiconductor laser 101 becomes possible.
- FIGS. 2A to 2D are views showing steps of forming a periodic domain-inverted structure
- FIGS. 3A to 3C are views showing steps of forming a ridge-type optical waveguide structure.
- Mg de is 5 ° off-cut substrate - a metal film 20 such as a T a in-flop L i Nb0 3 substrate 2 0 1 of the surface.
- L i Nb0 3 molar concentration of Mg in the substrate is 4. 8 ⁇ 6mo ⁇ %, the Mg de one-flop L i Nb_ ⁇ 3 substrate 20 1
- the molar concentration of Mg is, for example, 5 mo 1%.
- the 5 ° off-cut substrate is a substrate whose C axis is inclined by 5 ° with respect to the crystal surface.
- a metal layer 202 formed on the substrate 20 1 is molded by the photo dry etching, interdigital electrode 203 having a periodic pattern, Then, a stripe electrode 204 paired with the comb electrode 203 is formed on the substrate 201.
- an insulating film 2 0 5 is S i 0 2 film.
- FIGS. 3A to 3C are cross-sectional views of the substrate 200 viewed from the direction A in FIG. 2D.
- the domain-inverted structure 206 arranged obliquely with respect to the substrate 201 has a number of inclinations. It is about. Therefore, in FIGS. 3A to 3C, the number of the domain-inverted structures 206 is actually the same as the substrate 201. Although it is inclined, it is illustrated as being parallel for ease of viewing.
- the domain-inverted structure 206 is further subjected to ridge processing to form a ridge-type optical waveguide.
- the optical waveguide device 108 of FIG. 1 is manufactured.
- FIG. 3C the correspondence with each component shown in FIG. 1 is shown in parentheses by reference numerals.
- the optical waveguide device 108 which is an optical waveguide type SHG element, has high conversion efficiency and excellent light damage resistance. The reason is shown below.
- the optical waveguide device 108 is an optical waveguide device similar to a normal optical waveguide. No impurities are implanted to increase the refractive index of the waveguide. Ridge waveguide of the optical waveguide device 1 0 8 does not include the bulk of M g doped L i N b 0 3 crystals are and impurities. Therefore, the optical waveguide device 108 has high nonlinearity and light damage resistance, and is a high-efficiency, high-output optical wavelength conversion element.
- the optical waveguide device 108 having the periodic domain-inverted structure manufactured by the above-described manufacturing method in the actual measurement, reflection having selectivity was observed with light near the wavelength of 815 nm. Further examination revealed similar reflections at wavelengths of 40 nm, and it was found that the wavelengths depended on the period of domain inversion.
- the optical waveguide device 108 has a DBR grating structure that causes a change in the refractive index, despite having the domain-inverted structure 206 formed by applying an electric field.
- an off-cut substrate is used as the substrate 201.
- An off-cut substrate is a substrate whose crystal C-axis is inclined with respect to the substrate surface as described above. The angle between the crystal C axis and the substrate surface is called the off-cut angle.
- an optical waveguide using Ofukatsuto substrate M g doped L i N b 0 3 Device 108 was fabricated.
- the domain-inverted region 105 formed is formed along the polarization direction with respect to the surface of the optical waveguide device 108. It grows in a needle shape at an oblique depth.
- the polarization inversion grows in an oblique direction, asymmetric distortion occurs in the crystal, so that the distortion remains at the boundary between the inversion portion and the non-inversion portion, and it is considered that the refractive index changes due to this. That is, it is considered that some crystal strain remains at the boundary between the polarization inversion portion and the non-inversion portion, and a difference in refractive index occurs, and a refractive index grating structure is formed.
- polarization reversal was formed on the Z-cut and X-cut substrates by the same method, but almost no periodic refractive index distribution was formed.
- off-cut angle was 1 to 10 °. Even when the off-cut angle is 10 to 30 °, a change in the refractive index was observed, so that it can be used as a DBR grating structure. Thus, possible off-cut angles are in the range of 1 to 30 °, with 1 to 10 ° being particularly preferred.
- the offcut substrates used include an offcut X substrate, an offcut Y substrate, and an offcut XY substrate.
- An off-cut X substrate is almost an X-cut substrate, with the substrate surface parallel to the Y axis and the C axis inclined at an angle of 0 with the substrate plane.
- the substrate plane and the X axis are parallel, and the substrate surface and the C axis are inclined at an angle of 0.
- Offcut XY substrates are other substrates (the substrate plane is not parallel to both X and Y).
- the off-cut Y substrate, off-cut XY substrate, and off-cut X substrate have the largest refractive index change and large Bragg reflection when the domain-inverted structure is used.
- the off-cut XY substrate was more preferable because the propagation loss of the optical waveguide device 108 was reduced at a position where the substrate surface was inclined by 5 ° or more from the X and Y axes.
- the DBR grating structure in the optical waveguide device 108 manufactured by the above manufacturing method is thermally stable.
- a fundamental wave is incident on an optical waveguide device 108 in which a domain-inverted structure with a period of 2.8 is formed over a device length of 1 Omm on a 5 ° off-cut substrate, a fundamental wave with a wavelength of 820 nm is formed.
- a reflectance of 90% or more was observed.
- the optical waveguide device 108 was heat-treated, and the change in reflectance was observed.
- the annealing temperature was set to 400 ° C. and 600 ° C. After the heat treatment for 5 hours or more, the reflectance was measured. As a result, the DBR reflection wavelength and reflectance In some samples, there was no change in reflectance before and after the heat treatment. From this, it was found that the refractive index grating formed in the domain-inverted region 105 was very stable. Further, even after standing for several months, no change was observed in the reflection wavelength and the reflectance characteristics of the optical waveguide device 108, and it was confirmed that a permanently stable refractive index grating was formed.
- the factor that the domain-inverted region 105 functions as a refractive index grating is that an optical waveguide structure as shown in FIG. 1 is used. That is, as described above, the domain-inverted region 105 is thinned for use as an optical waveguide. Specifically, by making the thin film layer 103 thin to a thickness of about 3 to 4 / m, the function as an optical waveguide device is more effectively exhibited. The reflectivity from the DBR grating increased due to the thinning. This is considered to be because the thinning of the film strengthened the crystal distortion at the boundary of the domain-inverted portion and increased the change in the refractive index.
- the thickness of the thin film layer 103 is preferably 10 m or less. Further, when the length is 5 m or less, the change in the refractive index of the domain-inverted region 105 becomes large, which is more preferable.
- the reflectance from the DBR grating becomes higher than in the case of a proton exchange waveguide formed in a polarization reversal structure.
- a proton exchange waveguide is used for the optical waveguide having the domain-inverted structure because a uniform waveguide can be formed with low loss.
- the reflectivity of the DBR grating is significantly reduced. This is considered to be due to the fact that the crystal distortion formed by polarization reversal is relaxed during proton exchange.
- the optical waveguide device 108 is obtained by polishing and ridge processing,
- the domain-inverted region 105 has not been subjected to chemical treatment. Therefore, the crystal strain formed by the polarization inversion is not affected, and the change in the refractive index can be maintained. Therefore, high DBR reflection can be realized and DBR grating efficiency is high, which is preferable.
- DBR reflection is also observed in the proton exchange waveguide when formed using an off-cut substrate. Therefore, DBR reflection is greatly reduced by proton exchange, but it is possible to form a DBR grating with a domain-inverted structure also in a proton exchange waveguide as in the above-described manufacturing method.
- a board (thin layer 1 0 3) to form a DBR grating it is desirable to use the Mg-doped L i Nb0 3 as a nonlinear optical crystal.
- the L i N t ⁇ 3 substrate used when was offcut substrate, it is difficult to form a uniform grating, when the polarization inversion structure, formation of a DBR grating is difficult.
- 1 ⁇ 8 doped 1 ⁇ 11 ⁇ 13 (1 _ 2 chome ⁇ 3 (0 ⁇ X ⁇ 1) may be used as the nonlinear optical crystal.
- the Mg-de and one-flop L i T a 0 3 mixed crystal of the L was a Mg-de-and one-flops i Nb0 3, Mg-doped L i Nb_ ⁇ 3 and L i T A_ ⁇ 3, vinegar Bok doped with Mg Ikio L i Nb_ ⁇ 3, Mg-doped the strike Ikio L i T a 0 3 and Mg-doped Sutikio L i Nb_ ⁇ 3 and L i T a0 3 and any be a mixed crystal can be similarly used as the nonlinear optical crystal.
- the doping amount of 4. 8mo 1 ⁇ 6mo about 1% L i Nb 0 3 crystals Konguruento as de one flop amount of M g is preferred.
- the doping amount exceeds 6 mol 1% it is difficult to form domain inversion, and when the doping amount is less than 4.8 mol%, the resistance of the substrate 201 to optical damage is significantly deteriorated.
- stoichiometric L i N b O In the case of, the doping amount of Mg is 1.5mo 1% or more Is preferred.
- the light emitted from the semiconductor laser 101 enters the optical waveguide device 108, and the gain peak wavelength of the light emitted from the semiconductor laser 101 and the polarization inversion region 1 It is desirable that the DBR reflected wavelengths from 05 are almost equal. If this wavelength is significantly different, the oscillation wavelength of the semiconductor laser will not be fixed at the DBR wavelength fc. In the experiment, the condition that the wavelength difference was 5 nm or less was required. Further, it is more preferable that the output be 2 nm or less because the output is stable.
- a thin film nonlinear optical material may be adhered to the LN substrate 102 with an adhesive, but other techniques such as direct bonding may be used. Is also good.
- the optical waveguide device 108 has the DBR grating structure using the periodic polarization inversion structure.
- the change in the refractive index due to the polarization inversion structure can be applied to other devices.
- the domain-inverted structure is effective because it can be formed in any shape.
- the coherent light source 100 of the first embodiment may have a configuration in which the optical waveguide device 108 is directly joined to the semiconductor laser 101.
- a configuration using a lens optical system in addition to the optical waveguide device 108 and the semiconductor laser 101 may be adopted. With such a configuration, optical coupling between the optical waveguide device 108 and the semiconductor laser 101 is further facilitated.
- Fabry-Perot semiconductor laser 101 has a domain-inverted structure The oscillation is fixed and fixed to the DBR reflection wavelength.
- a stable harmonic output can be obtained by matching the DBR wavelength and the phase matching wavelength by temperature control.
- phase matching wavelength of the optical waveguide device 108 In order to form a highly efficient coherent light source 100 using the semiconductor laser 101 and the optical waveguide device 108, it is necessary to match the phase matching wavelength of the optical waveguide device 108 with the DBR reflection wavelength. Since the phase matching wavelength and the DBR reflection wavelength each depend on the periodic structure of the domain-inverted structure, a certain rule is required for the phase matching wavelength of the optical waveguide device 108 to match the DBR reflection wavelength. is there. Specifically, it has been found that the condition deviated from the point of coincidence between the DBR reflection wavelength and the phase matching wavelength calculated from the condition based on the dispersion characteristics of the crystal is optimal.
- the optical waveguide device 108 has a structure in which the crystal itself is processed into the shape of a ridge waveguide, unlike the conventional one, and thus the DBR condition and the phase matching condition in the optical waveguide are different.
- the DBR reflection wavelength ⁇ satisfies the following condition.
- DBR reflection wavelength ⁇ satisfies the ⁇ Ku ⁇ Ku ⁇ 2 of the relationship.
- E 6 3 5 + 48 Xn ( nm)
- ⁇ 1 7 74 +40 ⁇ (nm)
- the value of ⁇ between ⁇ ⁇ and ⁇ 2 depends on the width and thickness of the ridge portion of the optical waveguide device 108. In other words, a wavelength at which the DBR reflection wavelength ⁇ matches the phase matching wavelength appears at about every 40 nm.
- the order of the DBR grating is 15th, Reflections are obtained for each odd order. This is because the domain-inverted structure has a first-order periodic structure as a nonlinear grating that converts a fundamental wave into a second harmonic, and therefore, at the point where the conversion efficiency is maximized, the non- This is because the duty ratio of the transfer section is 50%. The accuracy was accurately determined with an error of 1-2%. The other conditions of the optical waveguide device 108 were almost single-mode conditions for the fundamental wave, and did not depend much on the shape of the waveguide.
- the DBR reflected wavelength and the phase matching wavelength can be accurately matched.
- the phase matching wavelength and the DBR reflection wavelength have temperature dependence.
- the temperature dependence of the phase matching wavelength is 0.06 nm Z ° C
- the temperature dependence of the DBR reflection wavelength is 0.026 nm. / ° C. Therefore, if the wavelength variation due to the temperature change is used, the phase matching wavelength and the DBR reflection wavelength can be precisely matched.
- an electrode structure is formed on the optical waveguide device 108, a voltage is applied, and the effective refractive index of the optical waveguide device 108 is changed so that the DBR reflection wavelength matches the phase matching wavelength.
- the optical waveguide device 108 had a device length of 12 mm, a polarization reversal period of about 2.8 m, and a phase matching wavelength of about 82 O nm.
- the phase matching wavelength and the DBR reflection wavelength were almost the same.
- the reflectivity of the DBR darting was about 90%, and almost all light was reflected.
- the reflection of the DBR grating is large, the conversion efficiency decreases.
- the feedback power to the semiconductor laser 101 is too large, a phenomenon that the semiconductor laser 101 is destroyed due to the destruction of the end face may occur. Therefore, it is desirable that the reflectance by the DBR grating be suppressed to 10% or less.
- the reflectance by the DBR grating is controlled by controlling the duty ratio of the domain-inverted region 105.
- the domain-inverted region 10 The reflectivity of the DBR grating can be controlled by shifting the width of 5 by about 0.1 m, so that the reflectivity of the DBR grating can be adjusted without lowering the conversion efficiency as an optical wavelength conversion element.
- the DBR wavelength and the phase matching wavelength can be matched even for even-order DBR wavelengths.
- the duty ratio of the domain-inverted region 105 is 50%, so that the duty ratio must deviate from 50%.
- high efficiency can be achieved by setting the duty ratio to about 40 to 49% and suppressing the reflectance to 10% or less.
- the amount of Bragg reflection is limited, and a decrease in the conversion efficiency due to the duty ratio deviating from 50% can be prevented.
- the duty ratio may be set to 30 to 40% to increase the reflectance.
- the optical waveguide device 108 of the first embodiment may be formed such that the convex portion 106 of the thin film layer 103 is in contact with the LN substrate 102, that is, the bonding layer 104.
- Fig. 4 shows a specific example.
- FIG. 4 is a configuration diagram showing another configuration example of the coherent light source using the optical waveguide device according to the first embodiment.
- Optical waveguide device 308, via an off force Tsu City of Mg-doped L i Nb_ ⁇ 3 thin film layer 303 is bonded layer 304 of the crystal on the LN substrate 302 It is configured to be adhered.
- the thin film layer 303 has a stripe-shaped convex portion 303, and a periodic domain-inverted region 305 is formed.
- the LN substrate 302 and the thin film layer 303 are arranged such that the convex portion 360 is on the LN substrate 302 side and is inside the optical waveguide device 308. Further, this optical waveguide device 308 and a semiconductor laser 308 that makes light incident on the optical waveguide device 308 form a coherent light source 300.
- the optical waveguide device 308 having such a configuration can realize a high-efficiency and high-output DBR dray- ing structure similarly to the optical waveguide device 108 of Fig. 1, and can be used as a wavelength conversion element. it can. Further, the coherent light source 300 can emit highly efficient and stable short-wavelength light similarly to the coherent light source 100 in FIG.
- FIG. 5 is a configuration diagram of a coherent light source using the optical waveguide device according to the second embodiment.
- the coherent light source 100a according to the second embodiment shown in FIG. 5 includes an optical waveguide device 108a instead of the optical waveguide device 108 of the coherent light source according to the first embodiment in FIG.
- the polarization inversion region 105 of the waveguide device 108a is divided into a DBR unit 112 and a wavelength conversion unit 111.
- the semiconductor laser 101 is a Fabry-Perot-type A 1 GaAs semiconductor laser, as in the first embodiment.
- the domain-inverted period of the domain-inverted region 105 is about 2.5 nm, and the phase matching wavelength is about 800 nm.
- Each of the 0 3 1 section 1 1 12 and the wavelength conversion section 1 1 1 1 has a periodic domain-inverted structure, but their periods are different.
- the wavelength converter 1 1 1 has a periodic structure selected so that the fundamental wave and the harmonic wave are phase-matched.
- the wavelength conversion is performed by a nonlinear grating. on the other hand,
- the 081 ⁇ section 112 reflects (Bragg reflection) a fundamental wave of a specific wavelength by means of a refractive index grating.
- a coherent light source with a stable output can be realized by matching the phase matching wavelength and the DBR reflection wavelength under the conditions described in the first embodiment.
- the polarization inversion structure for the DBR grating and the polarization inversion structure for wavelength conversion may be separated. Since the primary period of the DBR grating is as small as about 0.2 m, higher-order damping is obtained when domain-inverted damping is used as DBR grating. For this reason, the design can be optimized by separately designing the polarization reversal for DBR and wavelength conversion. In this case, attention must be paid to the relationship between the gain peak wavelength, the DBR reflection wavelength, and the phase matching wavelength of the semiconductor laser 101. The relationship between the wavelengths is as follows.
- the DBR reflection wavelength of the section 112 and the phase matching wavelength of the wavelength conversion section 111 match, and the DBR reflection wavelength of the wavelength conversion section 111 and the DBR reflection wavelength of the DBR section 112 are different.
- the difference is 5 nm or more, and the DBR reflection wavelength of the 081 ⁇ part 112 and the gain peak wavelength of the semiconductor laser 101 are almost the same.
- the design can be optimized.
- DBR reflection also occurs from the domain-inverted grating of the wavelength conversion unit 111. If the emitted light of the semiconductor laser 101 is fixed at the DBR reflection wavelength from the wavelength conversion section 111, the wavelength will not be converted because it is different from the phase matching wavelength. 08
- the DBR reflection wavelength from the section 111 matches the gain peak of the semiconductor laser 101 and the difference from the DBR reflection wavelength from the wavelength conversion section 111 However, the semiconductor laser 101 is fixed at the DBR reflection wavelength from the DBR unit 112.
- the difference between the DBR reflection wavelength of the DBR section 112 and the gain peak wavelength of the semiconductor laser 101 is preferably 5 nm or less. Further, it is more preferable that the difference between the DBR reflection wavelength of the DBR section 112 and the gain peak wavelength of the semiconductor laser 101 be 2 nm or less, since oscillation is more stable.
- the reason why the DBR section 112 is provided near the entrance of the optical waveguide device 108a is to make the distance from the semiconductor laser 101 as short as possible.
- the semiconductor laser 101 is fixed by the reflected light from the DBR unit 112, the light from the DBR unit 112 is fed back to the semiconductor laser 101, but usually, the semiconductor laser 101 is Noise is greatly increased by external returning light.
- the semiconductor laser 101 has a return light, a resonator structure exists outside in addition to the resonator structure inherent in the laser, resulting in a composite resonator structure.
- the resonator lengths will differ greatly. And the length of the resonator substantially changes due to the influence of an external temperature change or the like. This results in an unstable resonator structure, which increases oscillation noise.
- the semiconductor laser 101 and the optical waveguide device 108a are directly joined to each other, and the DBR 112 is connected to the incident end side (the semiconductor laser 101 side) of the optical waveguide device 108a.
- the emission end face of the semiconductor laser 101 and the reflection end face of the DBR grating can be made substantially coincident, and noise due to the multiple resonator structure can be prevented.
- the 08 length section 112 be installed near the incident end of the optical waveguide device 108a, and that the DBR grating be formed up to the incident end face. This can be applied to the first embodiment.
- a grating for phase matching is used as a DBR grating, it is preferable that the semiconductor laser 101 is similarly directly bonded. Further, it is preferable that the domain-inverted region 105 is also formed up to the incident end face of the optical waveguide device 108a.
- the output of the coherent light source 100a may be disturbed. This is because a change in the temperature inside the semiconductor laser 101 due to the drive current changes the resonator length of the semiconductor laser 101 and the oscillation wavelength of the semiconductor laser 101 changes. That is, when the output of the semiconductor laser 101 is modulated, the oscillation wavelength is also modulated.
- L and M g doped i N t> T a x ⁇ 3 (0 ⁇ x ⁇ 1) may be used.
- the optical waveguide device 108a has a narrow wavelength tolerance, and the conversion efficiency greatly changes even with a wavelength fluctuation of 0.1 nm or less. Therefore, in the output modulation of the semiconductor laser 101, the harmonic output changes due to the modulation of both the output and the wavelength of the semiconductor laser 101, resulting in a complex output waveform. For this reason, it is difficult to stably modulate the output of the optical wavelength conversion element with a required waveform. To prevent this, a normal Fabry-Perot semiconductor laser is used as the semiconductor laser 101, but another semiconductor laser having a phase modulation unit may be used.
- phase modulation unit By adding a phase modulation unit (not shown) to the semiconductor laser 101, the current applied to the phase modulation unit is modulated, thereby suppressing wavelength fluctuations that occur when the output of the semiconductor laser is modulated. Output modulation can be facilitated. In the first embodiment as well, the same effect can be obtained by adding a phase modulation unit to the semiconductor laser 101.
- FIG. 6 is a schematic diagram illustrating a configuration of an optical pickup optical system device according to the third embodiment.
- the optical pickup optical system device 400 according to Embodiment 3 includes a coherent light source 401, lenses 402 and 404 that are condensing optical systems, a beam splitter 403, and a photodetector 4. 0 and 5.
- the coherent light source 401 the coherent light sources 100, 300, and 100a of Embodiments 1 and 2 shown in FIGS. 1, 4, and 5 may be used. .
- light 407 emitted from the coherent light source 401 is passed through the lens 404 as a condensing optical system, the beam splitter 403 and the lens 404 as a condensing optical system.
- the condensed light is reflected on the surface of the optical disk 406, passes through the lens 404 again, changes its traveling direction by the beam splitter 403, and is guided to the photodetector 405.
- the photodetector 405 By detecting the light reflected by the optical disk 406 by the photodetector 405, the information written on the optical disk 406 can be read. Further, it is also possible to condense the light 407 emitted from the coherent light source 401 to the optical disc 406 and write information on the optical disc 406.
- the coherent light source 401 is the coherent light source 100, 300, or 100a of the first and second embodiments, it outputs short-wavelength light having a wavelength of 410 nm as described above. This enables high-density optical information recording.
- the coherent light source 401 (coherent light source 100, 300, 100a) confine the light in an optical waveguide with a width and thickness of several meters. Power density. Therefore, a temperature distribution occurs in the optical waveguide in the propagation direction. Due to this temperature distribution, a distribution of the phase matching condition for converting the fundamental wave into a harmonic wave is generated, and it becomes difficult to satisfy the phase matching condition, and the coherent light source 401 (the coherent light source 100, 300) , 100 a) may be reduced.
- the coherent light source 100, 300, 100a uses a bonding layer 104, 304, 104a of a metal having high thermal conductivity, the optical waveguide The thermal conductivity of the optical waveguide is improved, and the temperature distribution of the optical waveguide can be reduced. As a result, a high-output coherent light source 401 (coherent light source 100, 300, 100a) was realized. Therefore, in the optical pickup optical system device 400 according to the third embodiment, short-wavelength light of 5 OmW or more can be realized, and writing to a two-layer disc, which is difficult to realize at low output, is possible. Furthermore, high-speed writing can be realized.
- the optical device including the coherent light sources 100, 300, and 100a according to Embodiments 1 to 3 in addition to the above-described optical pickup optical system device, for example, a laser scanning microscope, etc. Coherent optical system optical device.
- an optical device capable of stabilizing the wavelength of a semiconductor laser by emitting light emitted from a semiconductor laser, realizing a high-output, stable-output coherent light source. it can.
- optical waveguide device of the present invention a coherent light source using the same, and an optical device including the same are used in, for example, optical information processing and optical applied measurement control fields.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Laser Surgery Devices (AREA)
- Light Guides In General And Applications Therefor (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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AU2003289498A AU2003289498A1 (en) | 2003-01-16 | 2003-12-22 | Optical waveguide device, coherent light source using same and optical apparatus having same |
DE60321723T DE60321723D1 (de) | 2003-01-16 | 2003-12-22 | Optische wellenleitervorrichtung, kohärente lichtquelle und optisches gerät, welche die genannte optische wellenleitervorrichtung verwenden |
US10/542,299 US7236674B2 (en) | 2003-01-16 | 2003-12-22 | Optical waveguide device, coherent light source using the same and optical apparatus having the same |
EP03781006A EP1586940B1 (en) | 2003-01-16 | 2003-12-22 | Optical waveguide device, coherent light source and optical apparatus using said optical waveguide device |
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JP2003-8780 | 2003-01-16 | ||
JP2003008780A JP4545380B2 (ja) | 2003-01-16 | 2003-01-16 | 光導波路デバイスならびにそれを用いたコヒーレント光源およびそれを備えた光学装置 |
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US (1) | US7236674B2 (ja) |
EP (1) | EP1586940B1 (ja) |
JP (1) | JP4545380B2 (ja) |
CN (1) | CN100409098C (ja) |
AT (1) | ATE398850T1 (ja) |
AU (1) | AU2003289498A1 (ja) |
DE (1) | DE60321723D1 (ja) |
WO (1) | WO2004063809A1 (ja) |
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TWI533072B (zh) * | 2012-08-23 | 2016-05-11 | Ngk Insulators Ltd | Wavelength conversion element |
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JPWO2014208533A1 (ja) * | 2013-06-27 | 2017-02-23 | 日本碍子株式会社 | ボリューム・ホログラム・グレーティング素子、光源デバイスおよび接続構造 |
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JP6646187B1 (ja) | 2018-11-08 | 2020-02-14 | 日本碍子株式会社 | 電気光学素子のための複合基板とその製造方法 |
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DE102018129623A1 (de) * | 2018-11-23 | 2020-05-28 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
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Also Published As
Publication number | Publication date |
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EP1586940A1 (en) | 2005-10-19 |
DE60321723D1 (de) | 2008-07-31 |
AU2003289498A1 (en) | 2004-08-10 |
US20060257084A1 (en) | 2006-11-16 |
JP2004219845A (ja) | 2004-08-05 |
US7236674B2 (en) | 2007-06-26 |
AU2003289498A8 (en) | 2004-08-10 |
JP4545380B2 (ja) | 2010-09-15 |
CN1739061A (zh) | 2006-02-22 |
ATE398850T1 (de) | 2008-07-15 |
CN100409098C (zh) | 2008-08-06 |
EP1586940B1 (en) | 2008-06-18 |
EP1586940A4 (en) | 2007-03-14 |
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