WO2004013901A3 - Batch furnace - Google Patents

Batch furnace Download PDF

Info

Publication number
WO2004013901A3
WO2004013901A3 PCT/US2003/023849 US0323849W WO2004013901A3 WO 2004013901 A3 WO2004013901 A3 WO 2004013901A3 US 0323849 W US0323849 W US 0323849W WO 2004013901 A3 WO2004013901 A3 WO 2004013901A3
Authority
WO
WIPO (PCT)
Prior art keywords
process tube
assembly
tube
heating
temperature
Prior art date
Application number
PCT/US2003/023849
Other languages
French (fr)
Other versions
WO2004013901A2 (en
Inventor
Woo Sik Yoo
Takashi Fukada
Original Assignee
Wafermasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/211,757 external-priority patent/US6727194B2/en
Application filed by Wafermasters Inc filed Critical Wafermasters Inc
Priority to EP03766990A priority Critical patent/EP1540708A2/en
Priority to JP2004526235A priority patent/JP4537201B2/en
Publication of WO2004013901A2 publication Critical patent/WO2004013901A2/en
Publication of WO2004013901A3 publication Critical patent/WO2004013901A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.
PCT/US2003/023849 2002-08-02 2003-07-30 Batch furnace WO2004013901A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03766990A EP1540708A2 (en) 2002-08-02 2003-07-30 Batch furnace
JP2004526235A JP4537201B2 (en) 2002-08-02 2003-07-30 Batch furnace

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/211,757 US6727194B2 (en) 2002-08-02 2002-08-02 Wafer batch processing system and method
US10/211,757 2002-08-02
US10/313,707 US6879778B2 (en) 2002-08-02 2002-12-05 Batch furnace
US10/313,707 2002-12-05

Publications (2)

Publication Number Publication Date
WO2004013901A2 WO2004013901A2 (en) 2004-02-12
WO2004013901A3 true WO2004013901A3 (en) 2004-06-10

Family

ID=31498035

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/023849 WO2004013901A2 (en) 2002-08-02 2003-07-30 Batch furnace

Country Status (4)

Country Link
EP (1) EP1540708A2 (en)
JP (1) JP4537201B2 (en)
KR (1) KR100686401B1 (en)
WO (1) WO2004013901A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410119B2 (en) * 2009-03-02 2014-02-05 光洋サーモシステム株式会社 Substrate heat treatment equipment
JP6630146B2 (en) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and heating unit
DE102020124030B4 (en) 2020-09-15 2022-06-15 centrotherm international AG Apparatus, system and method for plasma enhanced chemical vapor deposition
KR102359596B1 (en) * 2021-04-21 2022-02-08 주식회사 알씨테크 A seal cap and a semiconductor manufacturing equipment comprising thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723508A (en) * 1985-04-08 1988-02-09 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus
WO1998039609A1 (en) * 1997-03-07 1998-09-11 Semitool, Inc. Semiconductor processing furnace
US6191388B1 (en) * 1998-11-18 2001-02-20 Semitool, Inc. Thermal processor and components thereof
US6407368B1 (en) * 2001-07-12 2002-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. System for maintaining a flat zone temperature profile in LP vertical furnace

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6366927A (en) * 1986-09-08 1988-03-25 Toshiba Corp Thermal treatment equipment
US4738618A (en) * 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
JPH06349738A (en) * 1993-06-08 1994-12-22 Nec Corp Vertical low-pressure cvd device
JPH1197446A (en) * 1997-09-18 1999-04-09 Tokyo Electron Ltd Vertical heat treatment equipment
JP3862197B2 (en) * 1999-10-19 2006-12-27 株式会社グローバル Vertical heat treatment equipment
JP3598032B2 (en) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 Vertical heat treatment apparatus, heat treatment method, and heat insulation unit
JP3435111B2 (en) * 1999-12-15 2003-08-11 株式会社半導体先端テクノロジーズ Semiconductor wafer heat treatment equipment
JP2001284276A (en) * 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc Substrate treating device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723508A (en) * 1985-04-08 1988-02-09 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus
WO1998039609A1 (en) * 1997-03-07 1998-09-11 Semitool, Inc. Semiconductor processing furnace
US6191388B1 (en) * 1998-11-18 2001-02-20 Semitool, Inc. Thermal processor and components thereof
US6407368B1 (en) * 2001-07-12 2002-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. System for maintaining a flat zone temperature profile in LP vertical furnace

Also Published As

Publication number Publication date
JP2005535128A (en) 2005-11-17
JP4537201B2 (en) 2010-09-01
KR100686401B1 (en) 2007-02-26
KR20050062521A (en) 2005-06-23
WO2004013901A2 (en) 2004-02-12
EP1540708A2 (en) 2005-06-15

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