WO2003104329A1 - ポリシロキサンフィルム及びその製造方法 - Google Patents
ポリシロキサンフィルム及びその製造方法 Download PDFInfo
- Publication number
- WO2003104329A1 WO2003104329A1 PCT/JP2003/007154 JP0307154W WO03104329A1 WO 2003104329 A1 WO2003104329 A1 WO 2003104329A1 JP 0307154 W JP0307154 W JP 0307154W WO 03104329 A1 WO03104329 A1 WO 03104329A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polysiloxane
- film
- hydrocarbon group
- carbon atoms
- structural formula
- Prior art date
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- -1 Polysiloxane Polymers 0.000 title claims abstract description 179
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title abstract description 15
- 230000008569 process Effects 0.000 title abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 49
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 33
- 239000003054 catalyst Substances 0.000 claims abstract description 24
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 37
- 125000004432 carbon atom Chemical group C* 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004132 cross linking Methods 0.000 claims description 22
- 238000002834 transmittance Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 5
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 16
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 150000003961 organosilicon compounds Chemical class 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 239000005001 laminate film Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 188
- 239000010410 layer Substances 0.000 description 61
- 238000010438 heat treatment Methods 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
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- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
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- 239000007789 gas Substances 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- UHXCHUWSQRLZJS-UHFFFAOYSA-N (4-dimethylsilylidenecyclohexa-2,5-dien-1-ylidene)-dimethylsilane Chemical compound C[Si](C)C1=CC=C([Si](C)C)C=C1 UHXCHUWSQRLZJS-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 150000002484 inorganic compounds Chemical class 0.000 description 5
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- 238000004544 sputter deposition Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- ILBWBNOBGCYGSU-UHFFFAOYSA-N [[(dimethyl-$l^{3}-silanyl)oxy-dimethylsilyl]oxy-dimethylsilyl]oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)(C)O[Si](C)(C)O[Si](C)C ILBWBNOBGCYGSU-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000001588 bifunctional effect Effects 0.000 description 3
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- 150000002894 organic compounds Chemical class 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- QDLPJHIEFRSZJK-UHFFFAOYSA-N 2-methylbut-3-yn-1-ol Chemical compound OCC(C)C#C QDLPJHIEFRSZJK-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229920006125 amorphous polymer Polymers 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
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- 238000007740 vapor deposition Methods 0.000 description 2
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- OQJPAHYVGNJBJK-UHFFFAOYSA-N (3-dimethylsilylphenyl)-dimethylsilane Chemical compound C[SiH](C)C1=CC=CC([SiH](C)C)=C1 OQJPAHYVGNJBJK-UHFFFAOYSA-N 0.000 description 1
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- YYGWXQCILXPKDS-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-1-ol Chemical compound CC(C)CC(C)C#CO YYGWXQCILXPKDS-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
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- 101150046432 Tril gene Proteins 0.000 description 1
- MUUXBTFQEXVEEI-UHFFFAOYSA-N [2-(dimethyl-$l^{3}-silanyl)phenyl]-dimethylsilicon Chemical compound C[Si](C)C1=CC=CC=C1[Si](C)C MUUXBTFQEXVEEI-UHFFFAOYSA-N 0.000 description 1
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- 150000002941 palladium compounds Chemical class 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- PKELYQZIUROQSI-UHFFFAOYSA-N phosphane;platinum Chemical compound P.[Pt] PKELYQZIUROQSI-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 150000003284 rhodium compounds Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Definitions
- the present invention relates to a self-supporting polysiloxane film, and more particularly, to a polysiloxane film having optical transparency and excellent heat resistance.
- the present invention is used as an optoelectronic element such as a transparent electrode film or a TFT electrode film, an optical element such as a wavelength filter or a polarizer, or an electronic material having excellent insulation and heat resistance.
- an optoelectronic element such as a transparent electrode film or a TFT electrode film
- an optical element such as a wavelength filter or a polarizer
- an electronic material having excellent insulation and heat resistance.
- polymer films are considered to be one of the essential components in future paper-type displays.
- Films are one of the technical fields that polymer materials excel at, and include films of crystalline polymers such as polyethylene, polypropylene, and polyethylene terephthalate, and films of amorphous polymers such as polycarbonate and polymethyl methacrylate. Irum and the like are known. These are all thermoplastic polymers, and a film can be easily produced by adjusting the molecular weight and the molecular weight distribution.
- Today, many of the commercially available transparent polymer films are made of thermoplastic polymers, and are manufactured by, for example, calendering a heated and melted thermoplastic polymer or extruding through a T-die.
- Transparent films are manufactured by biaxially stretching crystalline polymers.
- thermoplastic polymer The cause of the orientation of the thermoplastic polymer is the stress applied in the heated and melted state, but application of some stress is inevitable in the molding process in the heated and melted state. Therefore, in order to suppress the orientation in the film, it is conceivable to carry out molding without applying stress, for example, solvent casting.
- solvent casting it is necessary to prepare a casting solution by mixing a thermoplastic polymer with a solvent together with additives such as a UV absorbent and an antioxidant.
- thermoplastic amorphous polymers having high heat resistance such as polysulfone
- polysulfone has a light absorption band up to around 400 nm and is optically opaque in terms of light transmittance. There are difficulties as a material.
- thermosetting resin a liquid monomer or a low molecular weight prepolymer is cross-linked to increase the molecular weight, so that pressure is not required during molding. Therefore, high molecular chain orientation does not occur.
- a film made of a thermosetting resin is often provided in a form held on a predetermined substrate, and it is often difficult to obtain a self-supporting film that is not held on the substrate. .
- Polysiloxanes can produce transparent films with excellent heat stability, UV stability, oxidation resistance, etc. without adding heat stability, UV absorbers, antioxidants, etc.
- a self-supporting polysiloxane film with practically sufficient physical properties has not yet been found on the market. Disclosure of the invention
- An object of the present invention is to provide a self-supporting polysiloxane film having excellent transparency in the visible light region, low birefringence, and practical properties. It is a further object of the present invention to provide a laminated film having an inorganic layer on a transparent layer made of the polysiloxane film. An object of the present invention is to provide an average structural formula (1) R 1 a sio ( 4_a ) / 2
- R is a monovalent hydrocarbon group having 1 to 10 carbon atoms, and a is a positive number in the range of 0 to a ⁇ 2).
- a polysiloxane having a hydrocarbon group hereinafter, referred to as “polysiloxane of the above average structural formula (1)”
- organic silicon having at least two hydrogen atoms in one molecule directly bonded to a silicon atom. This is achieved by a polysiloxane film composed of a polysiloxane crosslinked by reacting a compound (hereinafter, referred to as the “organic gay compound”) in the presence of a platinum-based catalyst.
- the polysiloxane film of the present invention is obtained by applying a polysiloxane of the average structural formula (1), the organogay compound, and a crosslinkable polysiloxane composition for film formation containing a platinum-based catalyst to a substrate. It can be manufactured through a step of forming a cured film; a step of cross-linking the uncured film to obtain a cured film; and a step of peeling the cured film from the substrate.
- the polysiloxane of the average structural formula (D is a (XR 2 2 S i 0 1/2 ) units
- X is the monovalent carbon number 2 "! 0 unsaturated aliphatic hydrocarbon group
- R 2 is Is a monovalent hydrocarbon group having 1 to 10 carbon atoms other than X
- R 3 Si 0 3/2 unit
- 3 is a monovalent hydrocarbon group having 1 to 10 carbon atoms other than may be one and a is a group).
- polysiloxane represented by the aforementioned average structural formula (1) is, (R 4 n S i O _ n) / 2) units (R 4 are independently Is a group selected from a monovalent hydrocarbon group having 1 to 10 carbon atoms and a monovalent unsaturated aliphatic hydrocarbon group having 2 to 10 carbon atoms, and n is a number of 1, 2 or 3. And ( Sio4 / 2 ) units, and may have an unsaturated aliphatic hydrocarbon group in the molecule.
- the polysiloxane film of the present invention is self-supporting, has no specific light absorption band in the visible light region, has a light transmittance of 85% or more at 400 nm, and has a wavelength range of 500 to 700 nm. And has a light transmittance of 88 o / o or more.
- a further object of the present invention is achieved by forming an inorganic layer on the transparent layer comprising the polysiloxane film to form a laminated film.
- the inorganic layer is preferably composed of a metal or semiconductor metal oxide deposited layer.
- the inorganic layer can be formed at a temperature of 300 ° C. or lower, preferably 250 ° C. or lower by a vacuum film forming method.
- FIG. 1 shows absorption spectra of four types of transparent laminated films measured in Example 6 while changing the inorganic material layer formation time.
- the crosslinkable polysiloxane composition used for the production of the polysiloxane film of the present invention essentially contains the polysiloxane of the above average structural formula (1), the above-mentioned organogay compound, and a platinum-based catalyst.
- the polysiloxane of the average structural formula (1) used in the present invention is a monovalent saturated hydrocarbon having 1 to 10 carbon atoms, preferably 1 to 6 carbon atoms, more preferably 1 or 2 carbon atoms.
- the unsaturated hydrocarbon group having 2 to 10 carbon atoms is classified into an unsaturated aliphatic hydrocarbon group having 2 to 10 carbon atoms and an aromatic hydrocarbon group having 6 to 10 carbon atoms.
- the polysiloxane of the average structural formula (1) always contains an unsaturated aliphatic hydrocarbon group in the molecule, and preferably contains at least two unsaturated aliphatic hydrocarbon groups.
- Examples of the saturated hydrocarbon group having 1 to 10 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, and a pentyl group. And an alkyl group such as a hexyl group, a heptyl group, an octyl group, a nonyl group and a decyl group. From the viewpoint of the heat resistance of the polysiloxane, a methyl group is preferred.
- Examples of the unsaturated aliphatic hydrocarbon group having 2 to 10 carbon atoms include alkenyl groups such as a vinyl group, a 1-proenyl group, an aryl group, an isopropyl group, a 1-butenyl group and a 2-butenyl group.
- alkenyl groups such as a vinyl group, a 1-proenyl group, an aryl group, an isopropyl group, a 1-butenyl group and a 2-butenyl group.
- a vinyl group is preferred.
- Examples of the aromatic hydrocarbon group having 6 to 10 carbon atoms include a phenyl group, a tril group, and a xylyl group.
- a phenyl group is preferable from the viewpoint of heat resistance of the polysiloxane.
- the polysiloxane of the average structural formula (1) used in the present invention is a polysiloxane composed of three functional units and one functional unit, or a polysiloxane composed of four functional units and one functional unit. Include. Further, the polysiloxane of the above average structural formula (1) does not exclude the use of bifunctional units in particular, Bifunctional units may be used as appropriate depending on the application. However, in general, when a bifunctional unit is introduced into a polysiloxane, the flexibility of the obtained film increases, but the heat deformation temperature decreases, which may cause a change in shape. However, it is limited to a range that does not reduce the effect of the present invention.
- a polysiloxane having a low molecular weight is selected as the polysiloxane of the average structural formula (1), and as the organosilicon compound, a hydrogen atom directly bonded to a gay atom is selected. It is preferable to select as many as possible.
- a polysiloxane having a high molecular weight is selected as the polysiloxane of the above average structural formula (1), and as the organosilicon compound, hydrogen directly bonded to a silicon atom is used. It is preferable to select one having as few atoms as possible.
- the mechanical properties of the polysiloxane film of the present invention can be controlled by appropriately selecting the molecular weight of the polysiloxane of the average structural formula (1) and the number of hydrogen atoms of the organic gayne compound. it can.
- the polysiloxane of the above average structural formula ( ⁇ ) has (XR 2 2 S i 0 1/2 ) units (X and R 2 are the same as above), and (R 3 S 0 3/2 ) units ( R 3 is the same as above), and (R 4 n S i O — n) / 2 ) units (R 4 and n are the same as above), and (S i 0 4/2 ) units, each of which has an unsaturated aliphatic hydrocarbon group in the molecule, and the molar ratio and molecular weight of each structural unit can be used in a wide range.
- the polysiloxane film obtained according to the present invention does not have a specific light absorption band in the visible light region, has a light transmittance of 85 ⁇ / ⁇ or more at 400 nm, and If the film has a light transmittance of 88% or more in the wavelength range of 0 to 700 nm and the tensile strength of the film is 10 megapascals or more, it can be freely selected.
- the organic gay compound used in the present invention is not particularly limited as long as it has two or more hydrogen atoms directly bonded to a gay atom in one molecule. Those having compatibility with the polysiloxane of the above average structural formula (1) in the presence or absence thereof are used. As the organic gay compound May be synthesized by ordinary means used in the art, or may be commercially available.
- organic gayne compound examples include, for example, the following:
- Silane-based organic compounds such as methylsilane, dimethylsilane, phenylsilane, diphenylsilane, phenylmethylsilane, and phenyltris (dimethyloxy) silane;
- aromatic organic gay compounds such as 1,2-bis (dimethylsilyl) benzene, 1,3-bis (dimethylsilyl) benzene, and 1,4-bis (dimethylsilyl) benzene;
- HMe 2 S i 0- (Me 2 S i 0) p- (MeHS i 0) -S i Me 2 H (where p and q are each independently 0 or 1 or more. Integer), for example, 1,1,3,3,5,5,7,7-octamethyltetrasiloxane, and the like.
- cyclic polysiloxane such as phenylhydrocyclosiloxane (trimer or tetramer)
- Ether-type organic gay compounds such as bis [(p-dimethylsilyl) phenyl] ether:
- Organic gay compounds such as (HMe 2 SiO) 3 SiC 6 H 4 Si (0Si e 2 H) 3 ;
- Me represents a methyl group and Ph represents a phenyl group).
- the number of unsaturated aliphatic hydrocarbon groups remaining after the cross-linking reaction can be reduced as much as possible by increasing the number of gay-bonded hydrogen atoms more than the number of unsaturated aliphatic hydrocarbon groups. Therefore, it is possible to suppress the deterioration of the resulting film due to ultraviolet rays and oxygen, and to improve the light transmittance.
- the amount of the organic siloxane compound is too large relative to the polysiloxane of the average structural formula (1), there is a problem in terms of reaction efficiency and the like.
- the number of unsaturated aliphatic hydrocarbon groups contained in the polysiloxane represented by the above average structural formula (1) is usually smaller than the number of unsaturated aliphatic hydrocarbon groups contained in the organic gayne compound.
- the polysiloxane of the average structural formula (1) and the organic gayne compound are blended so that the number of hydrogen atoms directly bonded to elemental atoms becomes equal or excessive.
- the above-mentioned organic compounds may be used depending on the use of the crosslinkable polysiloxane composition for film molding.
- the amount of the gay compound is necessary to make the amount of the gay compound so as not to generate silanol groups.
- the molar ratio of the manganese atom-bonded hydrogen atom in the organogaymine compound to the unsaturated aliphatic hydrocarbon group in the polysiloxane represented by the average structural formula (1) is 1: 1 or more, preferably 1: 1.1. -1: It is blended to become 1.5.
- the amount of the organic gay compound can be changed to 10 to 120 parts by mass with respect to 100 parts by mass of the polysiloxane of the average structural formula (1).
- the polysiloxane film of the present invention is preferably transparent, particularly in the visible light region.
- the hydrocarbon groups bonded to the atoms be the same as much as possible.
- the polysiloxane of the above average structural formula (1) in which the R 1 group is mainly a phenyl group it is similarly recommended to use the above-mentioned organic gay compound in which the phenyl group is directly bonded to a gay atom. .
- platinum-based catalyst blended in the crosslinkable polysiloxane composition for forming a film of the present invention an addition-reaction-applied platinum-based catalyst used for ordinary hydrosilylation reaction or crosslinking of silicone rubber can be used.
- platinum-based catalyst include platinum compounds such as platinum chloride, chloroplatinic acid, platinum-olefin complex, platinum-phosphine complex, and platinum-vinylsiloxane complex.
- a palladium compound catalyst and a rhodium compound catalyst are known, and these can also be used.
- the use amount of the platinum-based catalyst is not particularly limited, but is, for example, about 0.001 to 3% by weight in terms of platinum metal with respect to the total weight of the crosslinkable polysiloxane composition, or About 0.5 to 100 ppm in terms of platinum metal is used with respect to the total amount of the polysiloxane of the average structural formula (1) and the organosilicon compound. Depending on the components, the amount may be increased or decreased.
- the crosslinkable polysiloxane composition of the present invention may contain, in addition to the above-mentioned essential components, optional additives for imparting desired physical properties to the film, for example, various fillers, fibers, and the like generally mixed with polysiloxane. May be included.
- inorganic particles such as silica (including fumed silica and colloidal silica) and alumina, which are common additive particles, are added to improve the strength of the film. be able to.
- inorganic particles The amount of the compound varies depending on the purpose and application, and can be determined by a simple compounding test.
- the transparency of the film can be maintained by adjusting the particle size of the particles. Since the opacity due to the addition of particles is due to light scattering by the added particles, it differs depending on the refractive index of the material constituting the particles. However, the diameter is generally 1 to 5 to 16 or less of the incident light wavelength (80 to 150 in the visible light region). (Corresponding to 60 nm), the scattering can be suppressed and the transparency of the film can be maintained.
- Secondary scattering of particles is also a major factor as a cause of light scattering, and it is also possible to use particles that have been subjected to a surface treatment to suppress secondary aggregation.
- a phthalocyanine dye a dye such as a conventional phosphor
- a pigment such as a conventional phosphor
- the polysiloxane film of the present invention is added by adding an additive that absorbs visible light and expresses a predetermined function by light excitation. It is possible to functionalize.
- a method for producing the polysiloxane film of the present invention will be described.
- the polysiloxane film of the present invention can be obtained by film-forming a crosslinkable polysiloxane composition containing the polysiloxane of the average structural formula (1), the organic gay compound, and a platinum-based catalyst. Specifically, in the film molding, the crosslinkable polysiloxane composition is applied on a substrate to form an uncured film, the uncured film is crosslinked and cured, and the cured film is removed from the substrate. A series of operations for peeling are performed.
- the crosslinkable polysiloxane composition for forming a film can be prepared by dissolving the polysiloxane of the average structural formula (1), the organogay compound, and a platinum-based catalyst in an arbitrary solvent.
- the amount of the solvent to be used is, for example, in the range of 1 part by mass to 300 parts by mass with respect to 100 parts by mass of the polysiloxane composition for film molding, but is not limited to this range.
- Such a solvent may have a boiling point of 200 ° C or less, since the temperature at the time of crosslinking may reach about 200 ° C.
- ketones such as acetone and methyl ethyl ketone
- aromatic hydrocarbons such as benzene, toluene and xylene
- aliphatic hydrocarbons such as heptane, hexane and octane.
- Halogenated hydrocarbons such as dichloromethane, chloroform, methylene chloride, and 1,1,1-trichloroethane
- ethers such as THF
- organic solvents such as dimethylformamide and N-methylpyrrolidone.
- an uncured film can be formed by directly applying a mixture of the compound and a platinum-based catalyst as a crosslinkable polysiloxane composition onto a substrate.
- the viscosity of the mixture is preferably 1 ⁇ 10 3 Pa 1s or less, more preferably 1 ⁇ 10 2 Pa as or less.
- the average The crosslinkable polysiloxane composition for forming a film is formed so that the ratio of the gayne atom-bonded hydrogen atom of the organic gayne compound to the unsaturated aliphatic hydrocarbon group of the polysiloxane of the structural formula (1) becomes slightly excessive. It is preferable to control the compounding amount of the polysiloxane of the average structural formula (1) and the organic gay compound in the product.
- the substrate is not particularly limited as long as it has good releasability and the surface is smooth.
- the polysiloxane of the average structural formula (1) which is an essential component in the force-crosslinkable polysiloxane composition, the organic silicon compound , And a platinum-based catalyst, and, when the composition contains a solvent or an additive, is stable to the solvent and the additive, and is resistant to a temperature environment during a crosslinking reaction of the uncured film. You need to use something.
- the substrate material include inorganic substances such as glass and graphite, metal materials such as iron and stainless steel, and polymer base materials which are insoluble in the solvent used for the casting solvent and are stable even at the boiling point of the solvent.
- Crosslinking (curing) of the uncured film can be performed by heating the film at a temperature equal to or higher than room temperature.
- the heating temperature is not particularly limited as long as it is higher than room temperature.
- the heating is performed at a temperature of 40 ° C. or more to 200 ° C. or less.
- the hydrosilylation-type addition reaction of the organic gay compound to the polysiloxane of the average structural formula (1) that occurs upon heating is catalyzed by the platinum-based catalyst.
- the heating mode can be appropriately adjusted as needed. For example, a plurality of short-time heatings may be repeated, or a long-time continuous single heating may be performed.
- a curing retarder such as diamine, ethylenediamine, diphenylphosphine, diphenylphosphite, trioctylphosphine, getylphenylphosphonite, methyldiphenylphosphine is previously added to the crosslinkable polysiloxane composition.
- the film cured on the substrate by the cross-linking operation can be separated from the substrate into a free-standing independent film by a peeling means well known in the art.
- a peeling means for example, a mechanical separating means such as a doctor blade or vacuum suction can be suitably used.
- the thickness of the polysiloxane film of the present invention can be appropriately changed according to the application, and a film having a thickness of 5 to 200 m or more can be formed. is there.
- the polysiloxane film of the present invention produced in this way has a different self-supporting property from that of a film produced by ordinary casting of a thermosetting resin, and exists as an independent film. Further, the polysiloxane film of the present invention has no specific light absorption band in the visible light region, has a light transmittance of 85% or more at 400 nm, and has a light transmittance of 500 to 700. It can have a light transmittance of 88% or more in the wavelength range of nm. Since the polysiloxane film of the present invention is not manufactured by applying stress in a molten state, there is no problem of polymer chain orientation. Therefore, birefringence is negligibly small.
- the polysiloxane film of the present invention is characterized in that an unsaturated aliphatic hydrocarbon group contained in the polysiloxane having the average structural formula (1) and a hydrogen atom directly bonded to a gay atom contained in the organic gayne compound. It is obtained by polymerizing by the resulting addition-type crosslinking reaction.
- an addition-type cross-linking reaction since low-molecular-weight by-products do not occur during cross-linking, the shrinkage of the film volume due to cross-linking is kept smaller than in the condensation-type cross-linking reaction found in ordinary thermosetting resins. Can be Therefore, in the polysiloxane film obtained by the addition-type crosslinking reaction, the internal stress in the obtained film is small. Therefore, in the polysiloxane film of the present invention, generation of distortion due to internal stress is suppressed. This preferably contributes to the improvement of the optical uniformity and the strength of the film.
- the polysiloxane film of the present invention maintains the film shape even when heated to 300 ° C., and does not show any change in weight. In addition, it has excellent mechanical properties after heating, and the mechanical properties of the polysiloxane film of the present invention hardly change before and after heating. Therefore, the polysiloxane film of the present invention has high heat resistance comparable to general-purpose engineering plastics such as polycarbonate, and can be suitably used in a technical field where heat resistance is required.
- the laminated film of the present invention comprises an inorganic layer on a transparent layer made of the crosslinked polysiloxane film produced as described above.
- the transparent layer that is the substrate of the laminated film of the present invention can be composed of a single layer of a crosslinked polysiloxane film. If necessary, a laminate of a plurality of crosslinked polysiloxane films or a crosslinked polysiloxane film
- the polymer film may be composed of a laminate of a transparent film or a sheet other than the crosslinked polysiloxane film. In general, a polymer film is an insulator and has flexibility. Applied.
- a—S i ⁇ H ⁇ on a polymer film substrate (Amorphous silicon), p-Si (polycrystalline silicon), Transparent electrode Electrode elements formed of materials, etc .
- Various filters such as wavelength division filters for optical communication, band filters, etc .
- the crosslinked polysiloxane film used in the present invention is a polymer having heat resistance and poor water absorption, and is a crosslinked body. There is no harm. Therefore, it is possible to form an inorganic layer on the surface by applying various vacuum film forming methods.
- a book having a vapor-deposited layer made of an inorganic material on a transparent layer made of a crosslinked polysiloxane film having no specific absorption band in the wavelength region of 400 nm to 800 nm (hereinafter, simply referred to as “transparent layer”).
- the laminated film of the invention can be manufactured by performing a vacuum film forming method under the condition that the temperature of the transparent layer as the substrate is 300 ° C. or less. This temperature condition is necessary to suppress the deformation or decomposition of the transparent layer. More preferably, the temperature of the transparent layer during film formation is preferably 250 ° C. or less.
- the material of the inorganic layer is not particularly limited as long as it can be vapor-deposited, and ordinary materials such as a vapor-deposited metal and a semiconductor metal oxide can be used.
- ordinary materials include S i 0 2 , Z n O, I n 2 0 3 S n 0 2 , I TO (In d i um-T in 0-0 xide; ln 2 0 3 - xSn), N i 0, F e 0, C u 2 0, may be mentioned alumina, tungsten, gold, silver, copper, aluminum, diamond, or the like.
- the thickness of the inorganic layer depends on its material, but can be appropriately set within a range of, for example, 50 to 5,000 angstroms.
- a metal such as silver having an absorption band in the visible light region is formed as an extremely thin layer of about 50 to 100 angstroms, it is possible to sufficiently form a transparent inorganic conductive layer and obtain a laminated film. Can function as a transparent electrode material.
- the transparent electrode material in particular, a material having high transparency in a visible light region, which is selected from metal oxide semiconductor materials having a band gap absorption in a short wavelength region of less than 400 nm can be used. Such materials, for example, S io 2, Z n O , I n. O 3 , SnO, and metal oxide semiconductors such as ⁇ TO.
- the vacuum film forming method used for manufacturing the laminated film of the present invention includes a method using a gas such as thermal CVD, plasma CVD, and MOC VD as a film forming source, a vapor deposition using a target as a film forming source, and ion plating. , DC or RF sputtering can be employed.
- Is a metal oxide semiconductor typically I n 2 0 3, I TO (I n 2 0 3 - x S n), S n 0 2, Z n O n-type semiconductor and N i 0, F e O, include p-type semiconductors such as C u 2 O.
- the inside of the film formation chamber is evacuated, and at the time of film formation, about 10 to 4 Torr of argon and about 10 to 15 Torr of oxygen gas are introduced. Attempts have been made to compensate for oxygen vacancies in metal oxide semiconductors and prevent an increase in resistance due to a decrease in carrier concentration.
- the inorganic compound layer formed as described above is doped to adjust the resistance value. For example, if you select Z n O as the conductive material is doped I n and AI, etc., in the case of the same Ku S n 0 2 has been carried out doping, such as S b and F. By these methods, the resistance value can generally be adjusted to about 1 ⁇ 10 5 to 1 ⁇ 10 2 ⁇ / cm.
- the transparent layer constituting the substrate of the laminated film of the present invention has high resistance to oxygen and the like, it is possible to form an inorganic layer on the surface by applying such a film forming and doping method. .
- polysiloxane is considered to have low adhesion due to low surface tension, so if it is necessary to supplement the adhesion between the transparent layer and the inorganic layer in the laminated film, the ion plating method should be used. It is preferred to use. In this method, molecules in the gas phase are accelerated by ions and collide with a transparent layer serving as a substrate with large kinetic energy, thereby improving the adhesion between the transparent layer and the formed inorganic layer. Usually, No remarkable difference was observed in the properties when immersed in boiling water or after heating at 300 ° C, even when compared to the laminated film in which the inorganic layer was formed by RF sputtering of No. 7154.
- annealing is performed to promote crystallization of the formed layer.
- the transparent layer in the present invention has no change in physical properties even when heated at 300 ° C. Since annealing is not observed, annealing at around 300 ° C is possible.
- a metal When a metal is formed on a substrate by sputtering to form an inorganic layer, many metals including noble metals such as gold, silver, and copper are formed on the transparent layer at a temperature of less than 300 ° C. It is possible. ,
- CVD which decomposes the gas introduced into the chamber to form an inorganic layer on the transparent layer, does not cause any problems as long as it is performed at a low temperature (200 to 250 ° C) unlike plasma CVD.
- the pressure in the chamber is reduced to argon or hydrogen.
- 0.1 to 0.1 Torr 0.01 to 0.1 silane gas such as Si H 4 and Si 2 H 6 is used. Torr; Since the RF power is about several 10 to several 10 OmW / cm 2 , the temperature of the transparent layer serving as the substrate is about 200 to 250 ° C., but sufficient film formation can be achieved.
- the polysiloxane can withstand the temperature, which is one of the environmental conditions at the time of film formation, and the polysiloxane is not affected by substances existing in the environment.
- the film can be manufactured without any problems using a vacuum film forming method.
- a silica film is formed on the film by CVD using a compound containing oxygen, for example, tetraethoxysilane. be able to. As a result, gas permeability can be reduced, and deterioration of wear resistance and abrasion can be prevented.
- Example 1 GPC molecular weight of about 1 7 00 polysiloxane [V i Me 2 S i 0 0. 5]. . 25 [PhS i0 ,. 5 ]. . 75 resin 7 5 mass 0/0 toluene solution 4 g, 1, 4-bis (dimethylsilyl) benzene was 0. 6 9 g added and thoroughly stirred.
- the cast solution was cast on a glass substrate, allowed to stand at room temperature for about 1 hour, and then cured by heating at 100 ° C. for about 2 hours and at 150 ° C. for about 3 hours.
- This film was transparent and had a thickness of 70 m.
- the light transmittance of the film was measured with a Shimadzu spectrophotometer 3100 PC, the light transmittance at 400 to 700 nm was 85% or more.
- the light transmittance of the film was measured using a polarizer, but no polarization dependence was observed. It was also confirmed that the film had no birefringence.
- the obtained film was cut into a width of 1 cm and a length of 10 cm, and Young's modulus and tensile strength at room temperature were measured using a Shimadzu Autograph with a distance between marked lines of 6 Omm and a pulling speed of 6 OmmZ minutes. Was measured.
- the film had a Young's modulus of 1.5 gigapascal and a tensile strength of 23 megapascal.
- Example 1 The film prepared in Example 1 was heated at 200 ° C for 2 hours, cooled to room temperature, and then measured for light transmittance with a Shimadzu spectrophotometer 3100 PC. The light transmittance at 400 to 700 ⁇ was It was more than 85%. Next, the light transmittance of the film was measured using a polarizer, but no polarization dependence was observed. It was also confirmed that the film had no birefringence.
- the film was cut to a width of 1 cm and a length of 10 cm, and the Young's modulus at room temperature was measured using a Shimadzu autograph with a distance between marked lines of 6 Omm and a pulling speed of 60 mmZ min. The tensile strength was measured. The Young's modulus was 1.5 gigapascal, the tensile strength was about 23 megapascal, and there was no change from the film before heat treatment.
- Example 3
- Example 2 the same platinum catalyst as used in Example 1 was further added at 2 ppm by mass of platinum metal with respect to the mass of the mixture of the above resin and 1,4-bis (dimethylsilyl) benzene, and further, the reaction was delayed.
- 2-methyl-3-butyn-1-ol was added 100 times the mass of the platinum metal and added, followed by rapid stirring.
- the mixture thus obtained was cast on a glass substrate, left at room temperature for about 1 hour, and then cured by heating at 100 ° C for about 2 hours and at 150 ° C for about 3 hours. .
- Example 2 Thereafter, the same platinum catalyst used in Example 1 was further added in platinum weight relative to the weight of the mixture of the above resin and 1,1,3,3,5,5,7,7-octamethyltetrasiloxane. 2 ppm was added, and stirring was continued to obtain a cast solution.
- the cast solution was cast on a glass substrate, allowed to stand at room temperature for about 1 hour, and then cured by heating at 100 ° C. for about 2 hours and at 150 ° C. for about 3 hours.
- the mixture was allowed to cool to room temperature, and the cured product was peeled off from the glass substrate to form a polysiloxane film.
- the obtained film was cut into a width of 1 cm and a length of 1 Ocm, and the distance between the marked lines was 6 Omm and the pulling speed was 6 OmmZ minutes at room temperature using an autograph manufactured by Shimadzu Corporation.
- the Young's modulus and tensile strength were measured.
- the film had a Young's modulus of 1.1 gigapascal and a tensile strength of 15 megapascal.
- the cast solution was cast on a glass substrate, allowed to stand at room temperature for about 1 hour, and then cured by heating at 100 ° C. for 2 hours and at 150 ° C. for about 3 hours.
- the mixture was allowed to cool to room temperature, and the cured product was peeled off from the glass substrate to form a polysiloxane film.
- a transparent ITO layer was formed on the film obtained in Example 1 to obtain a transparent laminated film.
- the oxygen concentration was adjusted to 2 X 1 0- 4 T orr, set the RF power to 500 W, and the formation of I TO layer while maintaining the film temperature to 60 ° C went.
- the thickness of the inorganic layer was adjusted by changing the inorganic compound layer forming time to produce four types of transparent laminated films.
- the resistance value of the ITO layer of each of the four transparent laminated films was measured, and the absorption spectrum of each was measured using a Shimadzu spectrophotometer UV3100PC. The results are shown in Figure 1.
- the obtained laminated film was immersed in boiling water for 2 hours, but the inorganic compound layer did not peel off. After heating at 200 ° C. for 16 hours, no remarkable change was observed in both the appearance and the absorption spectrum.
- a thin conductive layer made of gold was formed on the film obtained in Example 1 to obtain a transparent laminated film.
- the sputtering method was adopted and gold was targeted. After reducing the pressure in the chamber to a vacuum, the argon concentration was adjusted to 1.3 mbar, and a gold thin film was formed under the conditions of 500 V and 8 mA.
- the formed gold thin film was sputtered with argon, XPS measurement was performed, and elemental analysis of the interface of the crosslinked polysiloxane film in contact with the gold thin film was performed.
- the 4 f (84.8 eV) electrons of gold showed negligible intensity.
- Si 2 p, Cls, and O 1s electrons of polysiloxane were detected as shown in Table 1 below.
- Example 1 The film obtained in Example 1 was fixed on a substrate in a chamber of a sputtering apparatus J EOL (JFC1100), and the pressure in the chamber was reduced to 10 to 6 T or ⁇ . — Introduced to 4 Torr. Next, 500 V .8m Gold sputtering was performed under the conditions of A, and a gold thin film of about 100 nm was formed on the film. When this gold thin film was measured by XPS, no peak other than gold was observed. The film on which the gold film was formed was immersed in warm water at 90 ° C for 2 hours, but no peeling of the gold thin film was observed. Industrial applicability
- the polysiloxane film of the present invention is self-supporting because of its excellent physical and mechanical properties, and can be used as an independent film. Further, since the polysiloxane film of the present invention is crosslinked, it has high heat resistance without using an additive for imparting heat resistance.
- the polysiloxane film of the present invention is transparent in the visible light region and has low birefringence. Moreover, it has an excellent feature that the light transmittance does not depend on polarization. Therefore, it is particularly useful for applications that require optically transparent features, and has good optical characteristics that can cope with polarized light / coherent light. Furthermore, by utilizing the transparency in a wide wavelength range, it can be used as an optical element such as a wavelength filter.
- the polysiloxane film of the present invention does not absorb ultraviolet rays because the unsaturated aliphatic hydrocarbon groups in the polysiloxane of the average structural formula (1) are consumed for cross-linking. High stability against Therefore, it is also possible to carry out a film-forming treatment in the gas phase on the polysiloxane film of the present invention.
- the polysiloxane film of the present invention can be used as an optoelectronic device, for example, a transparent electrode substrate film.
- the polysiloxane film of the present invention has a high heat resistance without using additives and a characteristic characteristic of a crosslinked polysiloxane having high dielectric breakdown strength. It can also be used for electronics materials that require high insulation properties, such as capacitor films.
- the polysiloxane film constituting the transparent layer of the laminated film of the present invention has good light transmittance not only in the visible light region but also in the near ultraviolet region to the near infrared region, and has birefringence. No or very small. Therefore, when a transparent electrode material is used as the inorganic layer, the laminated film of the present invention can be used as a transparent electrode film as a voltage application electrode of a thin display such as an electroluminescence display and a liquid crystal display. it can.
- the laminated film of the present invention can be used as a film-type optical element such as various filters and reflectors, and a screen for antistatic and electromagnetic shielding by adjusting the resistance value of the inorganic layer. It can also be used for other purposes.
- the laminated film of the present invention has high chemical treatment stability of the transparent layer, it is possible to form a part of the inorganic layer by performing various types of etching, for example, to form an electrode pattern. .
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Abstract
Description
Claims
Priority Applications (6)
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US10/516,840 US7381470B2 (en) | 2002-06-05 | 2003-06-05 | Polysiloxane film and process for producing the same |
CA 2488091 CA2488091A1 (en) | 2002-06-05 | 2003-06-05 | Polysiloxane film and process for producing the same |
JP2004511393A JP4621020B2 (ja) | 2002-06-05 | 2003-06-05 | ポリシロキサンフィルム及びその製造方法 |
KR1020047019672A KR100969496B1 (ko) | 2002-06-05 | 2003-06-05 | 폴리실록산 필름 및 이의 제조방법 |
AU2003242179A AU2003242179A1 (en) | 2002-06-05 | 2003-06-05 | Polysiloxane film and process for producing the same |
EP03733299A EP1535965B1 (en) | 2002-06-05 | 2003-06-05 | Polysiloxane film and process for producing the same |
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KR (1) | KR100969496B1 (ja) |
CN (1) | CN1322058C (ja) |
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- 2003-06-05 US US10/516,840 patent/US7381470B2/en not_active Expired - Fee Related
- 2003-06-05 EP EP03733299A patent/EP1535965B1/en not_active Expired - Fee Related
- 2003-06-05 JP JP2004511393A patent/JP4621020B2/ja not_active Expired - Fee Related
- 2003-06-05 AU AU2003242179A patent/AU2003242179A1/en not_active Abandoned
- 2003-06-05 CN CNB038146983A patent/CN1322058C/zh not_active Expired - Fee Related
- 2003-06-05 KR KR1020047019672A patent/KR100969496B1/ko not_active IP Right Cessation
- 2003-06-05 CA CA 2488091 patent/CA2488091A1/en not_active Abandoned
- 2003-06-05 WO PCT/JP2003/007154 patent/WO2003104329A1/ja active Application Filing
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Cited By (22)
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JP2001026717A (ja) * | 1999-07-01 | 2001-01-30 | Dow Corning Corp | 高い強度及び耐破壊性を有するシルセスキオキサン樹脂並びにそれらの調製方法 |
WO2005111149A1 (ja) * | 2004-05-14 | 2005-11-24 | Dow Corning Toray Co., Ltd. | オルガノポリシロキサン樹脂硬化物からなる独立フィルム、その製造方法および積層フィルム |
JP5297589B2 (ja) * | 2004-05-14 | 2013-09-25 | 東レ・ダウコーニング株式会社 | オルガノポリシロキサン樹脂硬化物からなる独立フィルム、その製造方法および積層フィルム |
US7960030B2 (en) | 2004-05-14 | 2011-06-14 | Dow Corning Corporation | Free films made of cured organopolysiloxane resins, process for production thereof, and laminated films |
JP2008530340A (ja) * | 2005-02-16 | 2008-08-07 | ダウ・コーニング・コーポレイション | 強化シリコーン樹脂フィルムおよびその製造方法 |
CN101120054B (zh) * | 2005-02-16 | 2013-01-09 | 陶氏康宁公司 | 增强的有机硅树脂膜及其制备方法 |
US8092910B2 (en) | 2005-02-16 | 2012-01-10 | Dow Corning Toray Co., Ltd. | Reinforced silicone resin film and method of preparing same |
JP2006335857A (ja) * | 2005-06-01 | 2006-12-14 | Ge Toshiba Silicones Co Ltd | 透明な硬化物を与えるポリオルガノシロキサン組成物 |
US8334022B2 (en) | 2005-08-04 | 2012-12-18 | Dow Corning Corporation | Reinforced silicone resin film and method of preparing same |
US8912268B2 (en) | 2005-12-21 | 2014-12-16 | Dow Corning Corporation | Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition |
JP2007308542A (ja) * | 2006-05-16 | 2007-11-29 | Dow Corning Toray Co Ltd | 硬化性シリコーンレジン組成物およびその硬化物 |
US20110014482A1 (en) * | 2006-06-05 | 2011-01-20 | Dow Corning Corporation | Ductile multilayer silicone resin films |
US8389650B2 (en) | 2006-10-19 | 2013-03-05 | Momentive Performance Materials Japan Llc | Curable polyorganosiloxane composition |
US8129480B2 (en) | 2006-10-19 | 2012-03-06 | Momentive Performance Materials Japan Llc | Curable polyorganosiloxane composition |
JPWO2008047892A1 (ja) * | 2006-10-19 | 2010-02-25 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 硬化性ポリオルガノシロキサン組成物 |
WO2008047892A1 (en) * | 2006-10-19 | 2008-04-24 | Momentive Performance Materials Japan Llc | Curable polyorganosiloxane composition |
US8273448B2 (en) | 2007-02-22 | 2012-09-25 | Dow Corning Corporation | Reinforced silicone resin films |
US8283025B2 (en) | 2007-02-22 | 2012-10-09 | Dow Corning Corporation | Reinforced silicone resin films |
JP2008231199A (ja) * | 2007-03-19 | 2008-10-02 | Sanyu Rec Co Ltd | 発光素子封止用シリコーン樹脂組成物及びこれを用いたポッティング方式による光半導体電子部品の製造方法 |
JP2010036577A (ja) * | 2008-07-10 | 2010-02-18 | Dow Corning Toray Co Ltd | ガスバリアー性硬化オルガノポリシロキサン樹脂フィルム及びその製造方法 |
US8840999B2 (en) | 2008-11-19 | 2014-09-23 | Dow Corning Toray Company, Ltd. | Silicone composition and a method for preparing the same |
JP2016500382A (ja) * | 2012-12-12 | 2016-01-12 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 薄いシリコーンフィルムの製造 |
Also Published As
Publication number | Publication date |
---|---|
CN1322058C (zh) | 2007-06-20 |
EP1535965B1 (en) | 2012-01-04 |
KR20050008785A (ko) | 2005-01-21 |
CN1662608A (zh) | 2005-08-31 |
JPWO2003104329A1 (ja) | 2005-10-06 |
US20050227091A1 (en) | 2005-10-13 |
KR100969496B1 (ko) | 2010-07-13 |
US7381470B2 (en) | 2008-06-03 |
EP1535965A4 (en) | 2007-08-01 |
EP1535965A1 (en) | 2005-06-01 |
AU2003242179A1 (en) | 2003-12-22 |
CA2488091A1 (en) | 2003-12-18 |
JP4621020B2 (ja) | 2011-01-26 |
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