WO2002071494A1 - Procede permettant d'effacer des donnees dans une memoire remanente par injection de trous chauds dans un site de piegeage pour support - Google Patents
Procede permettant d'effacer des donnees dans une memoire remanente par injection de trous chauds dans un site de piegeage pour support Download PDFInfo
- Publication number
- WO2002071494A1 WO2002071494A1 PCT/JP2001/011639 JP0111639W WO02071494A1 WO 2002071494 A1 WO2002071494 A1 WO 2002071494A1 JP 0111639 W JP0111639 W JP 0111639W WO 02071494 A1 WO02071494 A1 WO 02071494A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- erasure
- nonvolatile memory
- trapping site
- erasing data
- memory array
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002570309A JP4490630B2 (ja) | 2001-03-01 | 2001-12-28 | 不揮発性メモリの消去方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/795,186 | 2001-03-01 | ||
US09/795,186 US6418062B1 (en) | 2001-03-01 | 2001-03-01 | Erasing methods by hot hole injection to carrier trap sites of a nonvolatile memory |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002071494A1 true WO2002071494A1 (fr) | 2002-09-12 |
Family
ID=25164943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/011639 WO2002071494A1 (fr) | 2001-03-01 | 2001-12-28 | Procede permettant d'effacer des donnees dans une memoire remanente par injection de trous chauds dans un site de piegeage pour support |
Country Status (3)
Country | Link |
---|---|
US (1) | US6418062B1 (ja) |
JP (1) | JP4490630B2 (ja) |
WO (1) | WO2002071494A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006135341A (ja) * | 2005-12-01 | 2006-05-25 | Renesas Technology Corp | 半導体装置 |
US9012968B2 (en) | 2002-12-04 | 2015-04-21 | Renesas Electronics Corporation | Semiconductor non-volatile memory device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184873A (ja) * | 2000-10-03 | 2002-06-28 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
KR100456596B1 (ko) * | 2002-05-08 | 2004-11-09 | 삼성전자주식회사 | 부유트랩형 비휘발성 기억소자의 소거 방법 |
US7391653B2 (en) * | 2002-10-15 | 2008-06-24 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US7394703B2 (en) * | 2002-10-15 | 2008-07-01 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US20050251617A1 (en) * | 2004-05-07 | 2005-11-10 | Sinclair Alan W | Hybrid non-volatile memory system |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482095A (ja) * | 1990-07-24 | 1992-03-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH0582787A (ja) * | 1991-09-19 | 1993-04-02 | Sony Corp | 薄膜トランジスタ型不揮発性半導体メモリ装置 |
US5969383A (en) * | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
JP2000164736A (ja) * | 1998-11-30 | 2000-06-16 | Toshiba Corp | 不揮発性半導体メモリ及びその製造方法 |
JP2000294660A (ja) * | 1999-04-06 | 2000-10-20 | Sony Corp | 不揮発性半導体記憶装置およびその駆動方法 |
JP2001024075A (ja) * | 1999-07-13 | 2001-01-26 | Sony Corp | 不揮発性半導体記憶装置及びその書き込み方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186293A (en) * | 1981-05-12 | 1982-11-16 | Fujitsu Ltd | Semiconductor storing unit |
JP3061924B2 (ja) * | 1992-03-02 | 2000-07-10 | 日本電気株式会社 | 不揮発性記憶装置の消去方法 |
JP3417974B2 (ja) * | 1993-06-03 | 2003-06-16 | ローム株式会社 | 不揮発性記憶素子およびこれを利用した不揮発性記憶装置 |
KR100485356B1 (ko) * | 1997-06-26 | 2005-07-25 | 주식회사 하이닉스반도체 | 플래시메모리셀 |
JPH11297860A (ja) * | 1998-03-26 | 1999-10-29 | Newcore Technol Inc | 半導体記憶装置 |
US6255166B1 (en) * | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
-
2001
- 2001-03-01 US US09/795,186 patent/US6418062B1/en not_active Expired - Lifetime
- 2001-12-28 WO PCT/JP2001/011639 patent/WO2002071494A1/ja active Application Filing
- 2001-12-28 JP JP2002570309A patent/JP4490630B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482095A (ja) * | 1990-07-24 | 1992-03-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH0582787A (ja) * | 1991-09-19 | 1993-04-02 | Sony Corp | 薄膜トランジスタ型不揮発性半導体メモリ装置 |
US5969383A (en) * | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
JP2000164736A (ja) * | 1998-11-30 | 2000-06-16 | Toshiba Corp | 不揮発性半導体メモリ及びその製造方法 |
JP2000294660A (ja) * | 1999-04-06 | 2000-10-20 | Sony Corp | 不揮発性半導体記憶装置およびその駆動方法 |
JP2001024075A (ja) * | 1999-07-13 | 2001-01-26 | Sony Corp | 不揮発性半導体記憶装置及びその書き込み方法 |
Non-Patent Citations (2)
Title |
---|
2000 SYMPOSIUM ON VLSI TECHNOLOGY DIGEST OF TECHNICAL PAPERS, 13 June 2000 (2000-06-13), pages 122 - 123, XP002950510 * |
IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 11, November 2000 (2000-11-01), pages 543 - 545, XP000980847 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012968B2 (en) | 2002-12-04 | 2015-04-21 | Renesas Electronics Corporation | Semiconductor non-volatile memory device |
US9299715B2 (en) | 2002-12-04 | 2016-03-29 | Renesas Electronics Corporation | Fabrication method and structure of semiconductor non-volatile memory device |
US9412750B2 (en) | 2002-12-04 | 2016-08-09 | Renesas Electronics Corporation | Fabrication method and structure of semiconductor non-volatile memory device |
JP2006135341A (ja) * | 2005-12-01 | 2006-05-25 | Renesas Technology Corp | 半導体装置 |
JP4611878B2 (ja) * | 2005-12-01 | 2011-01-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4490630B2 (ja) | 2010-06-30 |
US6418062B1 (en) | 2002-07-09 |
JPWO2002071494A1 (ja) | 2004-07-02 |
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