WO2001059188A1 - Substrat piezo-electrique pour dispositif de traitement des ondes acoustiques de surface et dispositif de traitement des ondes acoustiques de surface - Google Patents

Substrat piezo-electrique pour dispositif de traitement des ondes acoustiques de surface et dispositif de traitement des ondes acoustiques de surface Download PDF

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Publication number
WO2001059188A1
WO2001059188A1 PCT/JP2001/000812 JP0100812W WO0159188A1 WO 2001059188 A1 WO2001059188 A1 WO 2001059188A1 JP 0100812 W JP0100812 W JP 0100812W WO 0159188 A1 WO0159188 A1 WO 0159188A1
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Prior art keywords
acoustic wave
surface acoustic
piezoelectric substrate
wave device
angle
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PCT/JP2001/000812
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English (en)
Japanese (ja)
Inventor
Kenji Inoue
Katsuo Sato
Hiroki Morikoshi
Jyun Sato
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Tdk Corporation
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Publication of WO2001059188A1 publication Critical patent/WO2001059188A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles

Definitions

  • Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
  • the present invention relates to a piezoelectric substrate for a surface acoustic wave device used for a surface acoustic wave device provided with interdigital electrodes on a piezoelectric substrate, and a surface acoustic wave device.
  • a surface acoustic wave device that is advantageous for miniaturization and weight reduction, that is, a surface acoustic wave filter, is often used in the high frequency section and the intermediate frequency section of a terminal.
  • a surface acoustic wave device is one in which interdigital electrodes for exciting, receiving, reflecting or transmitting surface acoustic waves are formed on a piezoelectric substrate.
  • Important characteristics of the piezoelectric substrate used in the surface acoustic wave device include the surface acoustic wave velocity (hereinafter referred to as S AW velocity) of the surface acoustic wave, the center frequency when a filter is configured, and the case where a resonator is configured. Temperature coefficient of the resonance frequency (hereinafter referred to as the frequency temperature coefficient) and the square k 2 of the electromechanical coupling coefficient (hereinafter, k 2 is also referred to as the electromechanical coupling coefficient).
  • Fig. 27 shows the types of substrates that have been frequently used as piezoelectric substrates for surface acoustic wave devices and their characteristics. Hereinafter, these piezoelectric substrates are distinguished by the symbols in FIG. 27.
  • the piezoelectric substrates that have been frequently used include the 128 S LN, 64 L N, and 36 LT with large S AW speed and large electromechanical coupling coefficient, and the relatively small S AW speed. It can be seen that it can be broadly divided into two sets, LT111 and ST crystal, which have small electromechanical coupling coefficients.
  • Large S AW speed and large electromechanical coupling coefficient Piezoelectric substrates (128 LN, 64 LN, 36 LT) are used, for example, in surface acoustic wave filters in the high-frequency part of terminals, while having relatively low S AW speeds and small electromechanical coupling coefficients.
  • Piezoelectric substrates with LT LT112, ST quartz
  • are used for example, for surface acoustic wave filters in the intermediate frequency section of terminals. The reasons are as follows.
  • the center frequency is almost proportional to the SAW speed of the piezoelectric substrate used, and is almost inversely proportional to the width of the electrode finger of the interdigital electrode formed on the substrate. Therefore, it is preferable to use a substrate with a high S AW speed in forming a filter used in the high-frequency circuit section.
  • the filter used in the high-frequency part of the terminal is required to have a wide band with a pass band of 20 MHz or more, so it is necessary to have a large electromechanical coupling coefficient.
  • a frequency band of 70 to 300 MHz is used as an intermediate frequency of a mobile terminal.
  • a filter having a center frequency in this frequency band is configured using a surface acoustic wave device
  • the width of the electrode fingers formed on the substrate is reduced by the high-frequency circuit section. It becomes necessary to increase the center frequency very much in accordance with the amount of decrease in the center frequency as compared with the filter used in the filter, which causes a problem that the surface acoustic wave device itself becomes large.
  • LT112 or ST quartz having a low S AW speed is used as the piezoelectric substrate of the intermediate frequency directional surface wave filter.
  • ST quartz is preferable because the first-order frequency temperature coefficient is zero. Since ST crystal has a small electromechanical coupling coefficient, it can be constructed only with a narrow passband filter. However, since the role of the intermediate frequency filter is to pass only the signal of one narrow channel, the fact that the electromechanical coupling coefficient is small has not been a problem so far.
  • the ST crystal LT112 which is conventionally considered to be suitable for an intermediate frequency surface acoustic wave filter, has a S AW speed exceeding 300 m_s (seconds) and is compact. There is a limit to conversion. Disclosure of the invention
  • An object of the present invention is to provide a SAW device for a surface acoustic wave device having a large electromechanical coupling coefficient effective for broadening the passband and a small S AW speed effective for miniaturizing the surface acoustic wave device,
  • An object of the present invention is to provide a surface acoustic wave device that can be downsized.
  • Piezoelectric substrate SAW device of the present invention is used in the surface acoustic wave device provided with interdigital electrodes on a piezoelectric substrate, belonging to the point group 3 2, Ca 3 Ga 2 Ge 4 0 14 type crystal structure And its main component is composed of Ca, Nb, Si, Ga and O, and is composed of a single crystal represented by the chemical formula Ca 3 NbGa 3 SiO, 4 .
  • a large electromechanical coupling coefficient effective for broadening the pass band and a small S AW speed effective for miniaturizing the surface acoustic wave device can be realized. Becomes possible.
  • the surface acoustic wave device of the present invention is a ⁇ surface NamiSo location provided with the interdigital electrodes on a piezoelectric substrate, the piezoelectric substrate belongs to point group 3 2, Ca 3 Ga 2 Ge 4 0 14 type crystal It has a structure, and its main components are composed of Ca, Nb, Si, Ga and ⁇ , and are composed of a single crystal represented by the chemical formula Ca 3 NbGa 3 SiO, 4 .
  • a piezoelectric substrate having a large electromechanical coupling coefficient effective for broadening the pass band and a small SAW speed effective for miniaturizing the surface acoustic wave device is used. Therefore, a wider band and a smaller size can be achieved.
  • the piezoelectric substrate or the surface acoustic wave device for a surface acoustic wave device When the cut-out angle and the surface acoustic wave propagation direction from the single crystal are expressed as ( ⁇ , ⁇ , ⁇ ) in Euler's one-angle notation, ⁇ , 0, and may be in any of the following regions. Good.
  • FIG. 1 is a perspective view showing an example of a configuration of a surface acoustic wave device according to one embodiment of the present invention.
  • FIG. 2 is an explanatory diagram showing test results corresponding to regions 111 in one embodiment of the present invention.
  • FIG. 3 is an explanatory diagram showing test results corresponding to regions 112 in one embodiment of the present invention.
  • FIG. 4 is an explanatory diagram showing test results corresponding to region 2-1 in one embodiment of the present invention.
  • FIG. 5 is an explanatory diagram showing test results corresponding to region 2-2 in one embodiment of the present invention.
  • FIG. 6 is an explanatory diagram showing test results corresponding to region 3-1 in one embodiment of the present invention.
  • FIG. 7 is an explanatory diagram showing test results corresponding to the area 3-2 in one embodiment of the present invention.
  • FIG. 8 is an explanatory diagram showing a test result corresponding to a region 411 in one embodiment of the present invention.
  • FIG. 9 is an explanatory diagram showing test results corresponding to regions 412 in one embodiment of the present invention.
  • FIG. 10 is an explanatory diagram showing test results corresponding to region 5 in one embodiment of the present invention.
  • FIG. 11 is an explanatory diagram two-dimensionally showing the relationship between 0 and and the S AW speed based on the test results shown in FIG.
  • FIG. 12 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 13 is an explanatory diagram two-dimensionally showing the relationship between ⁇ and S AW speed based on the test results shown in FIG.
  • FIG. 14 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 15 is an explanatory diagram two-dimensionally representing the relationship between ⁇ and S AW speed based on the test results shown in FIG.
  • FIG. 16 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 17 is an explanatory diagram two-dimensionally expressing the relationship between 0 and S AW speed based on the test results shown in FIG.
  • FIG. 18 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 19 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the S AW speed based on the test results shown in FIG.
  • FIG. 20 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 21 is an explanatory diagram two-dimensionally representing the relationship between 0 and yu and S AW speed based on the test results shown in FIG.
  • FIG. 2 is an explanatory diagram two-dimensionally showing a relationship with a number.
  • FIG. 23 is an explanatory diagram two-dimensionally representing the relationship between ⁇ and S AW speed based on the test results shown in FIG.
  • FIG. 24 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 25 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the Saw speed based on the test results shown in FIG.
  • FIG. 26 is an explanatory diagram two-dimensionally showing the relationship between 0 and and the electromechanical coupling coefficient based on the test results shown in FIG.
  • FIG. 27 is an explanatory diagram showing types of substrates frequently used as piezoelectric substrates for a surface acoustic wave device and their characteristics.
  • FIG. 1 is a perspective view showing an example of a configuration of a surface acoustic wave device according to one embodiment of the present invention.
  • the surface acoustic wave device includes a piezoelectric substrate 1 and a pair of interdigital electrodes 2 provided on one main surface of the piezoelectric substrate 1.
  • the shape, number, and arrangement of the electrodes 2 may be in any known form.
  • the material of the piezoelectric substrate 1, belonging to the point group 3 2 has a Ca 3 Ga 2 Ge 4 0 1 4 type crystal structure, the main component of that is Ca, Nb, made of S i, Ga and ⁇ the formula single crystal is used which is represented by Ca 3 NbGa 3 S i O, 4.
  • the X, y, and z axes shown in FIG. 1 are orthogonal to each other.
  • the X axis and the y axis are in the in-plane direction of the substrate 1, and the X axis defines the propagation direction of the surface acoustic wave.
  • the z-axis is perpendicular to the plane of the substrate 1 and defines the cutout angle (cut plane) of the single crystal substrate.
  • the relationship between the X axis, y axis, and z axis and the X axis, Y axis, and Z axis of the single crystal, that is, the cutout angle from the substrate single crystal and the direction of propagation of surface acoustic waves, are expressed in Euler angles. (, ⁇ , ⁇ ).
  • Preferred regions in the region 111 are as follows.
  • the S AW speed of substrate 1 is less than 310 Om / s, which is smaller than that of ST crystal, and the electromechanical coupling coefficient k 2 of substrate 1 is 0.2% or more.
  • ⁇ , ⁇ which become sufficiently large.
  • the electromechanical coupling coefficient k 2 is 0.3% or more, which is sufficiently larger than that of ST crystal.
  • the area 1 one 2, and the SAW velocity is 3 2 0 Om / s or less of the substrate 1, the ST quartz comparable, the electromechanical coupling coefficient k 2 of the substrate 1, and 2% or more 0.5, sufficiently large There are combinations of ⁇ , ⁇ ,.
  • region 2-1 The preferred regions in region 2-1 are as follows.
  • the S AW speed of the substrate 1 is 3200 m / s or less, which is almost the same as that of ST crystal, and the electromechanical coupling coefficient k 2 of the substrate 1 is 0.2% or more.
  • the electromechanical coupling coefficient k 2 of the substrate 1 is 0.2% or more.
  • ⁇ , ⁇ , and Yu that increase.
  • Preferred areas in the area 2-2 are as follows.
  • the S AW speed of the substrate 1 is 3100 m / s or less, which is smaller than that of ST crystal, and the electromechanical coupling coefficient k 2 of the substrate 1 is 0.2% or more.
  • the electromechanical coupling coefficient k 2 of the substrate 1 is 0.2% or more.
  • the region has preferably the above in the region 2 _ 2, and the electromechanical coupling coefficient k 2 is 0.4% or more, enough large Kikunaru ⁇ compared to the ST quartz crystal, theta, there is a combination of.
  • the preferred regions in region 3-1 are as follows.
  • the preferred areas in the area 3-2 are as follows.
  • the S AW speed of the substrate 1 is 3200 mZ s or less, almost the same as that of ST crystal, and the electromechanical coupling coefficient k 2 of the substrate 1 is sufficiently large, 0.2% or more.
  • ⁇ , ⁇ The above preferred region in the region 3-2, and the electromechanical coupling coefficient k 2 is 0.4% or more, is sufficiently larger than that of ST quartz crystal phi, theta, there is a combination of.
  • the preferred regions within region 4-1 are as follows.
  • the area 4 one 1, and the SAW velocity is 3 2 0 OmZs following substrate 1, the ST quartz comparable, the electromechanical coupling coefficient k 2 of the substrate 1, and 2% or more 0.5, sufficiently large phi, There are combinations of ⁇ and ⁇ . In the above preferred region in the region 411, there is a combination of ⁇ and ⁇ , where the electromechanical coupling coefficient k 2 is 0.5% or more, which is sufficiently larger than that of ST quartz.
  • Preferred regions in the regions 412 are as follows.
  • the ST quartz comparable, the electromechanical coupling coefficient k 2 of the substrate 1, and 2% or more 0.5, sufficiently large ⁇ , ⁇ , and Yu exist.
  • the region 5, and the SAW velocity is 3 1 0 Om / s or less of the substrate 1, the ST quartz comparable, the electromechanical coupling coefficient k 2 of the substrate 1, and 2% or more 0.5, sufficiently large phi, There are combinations of ⁇ and ⁇ .
  • Ca 3 NbGa 3 SiOH may have oxygen vacancies.
  • the single crystal may contain unavoidable impurities, for example, Al, Zr, Fe, Ce, Nd, La, Pt, and Ca.
  • the material of the piezoelectric board 1 belongs to point group 32, has a Ca 3 Ga 2 Ge 4 0 14 type crystal structure, the main Ingredient is Ca, Nb, Si, than Ga and O, the chemical formula Ca 3 NbGa It was a single crystal represented by 3 SiO, 4 .
  • the single crystal was grown by the CZ method using high-frequency heating, that is, the rotary pulling method. From the obtained single crystal, a substrate was cut out at a cut-out angle described later to obtain a piezoelectric substrate 1 for a surface acoustic wave device.
  • an elastic surface acoustic wave device for testing has an input / output interdigital electrode 2 formed on the surface of a piezoelectric substrate 1 cut out of the single crystal.
  • the interdigital electrode 2 was formed by processing an aluminum (A 1) film formed by evaporation into a predetermined shape by a photoetching method.
  • the period of the electrode finger corresponding to the wavelength ⁇ of the surface acoustic wave is 60 / zm, the logarithm is 20 pairs, and the intersection width (length of the intersection) is 60 ⁇ (360 tm).
  • the thickness was 0.3 m.
  • test surface acoustic wave devices with different cut-out angles of substrate 1 and propagation directions of surface acoustic waves were fabricated, and the SAW speed and electromechanical coupling coefficient k for each test surface acoustic wave device were prepared.
  • the SAW speed was determined by multiplying the measured value of the center frequency of the filter characteristics by the surface acoustic wave wavelength in the surface acoustic wave device having the interdigital electrodes 2 having the above-described configuration.
  • the electromechanical coupling coefficient k 2 is obtained by measuring the two-terminal admittance of one of the input / output interdigital electrodes 2, for example, the input interdigital electrode 2, and obtaining the real part of the admittance (conductance signal). ) And the imaginary part (susceptance) by the method using Smith's equivalent circuit. This For details on the method, see, for example, I. Basics, 4.1.2 Effectiveness of Surface Waves in the publication “Surface Wave Devices and Their Applications” (Electronic Materials Industries Association, published by Nikkan Kogyo Shimbun, 1997). Electro-mechanical coupling coefficients, are described in detail in the section. The above characteristics were measured while keeping the ambient temperature of the device at 25. FIG.
  • FIG. 2 is an explanatory diagram showing test results corresponding to regions 111.
  • FIG. 11 is an explanatory diagram two-dimensionally showing the relationship between ⁇ , Yu and S AW speed based on the test results shown in FIG.
  • the first 2 figures based on the test results shown in FIG. 2 is an explanatory diagram representing a two-dimensional relationships between 0 Contact and the electromechanical coupling coefficient k 2.
  • the electromechanical coupling coefficient k 2 was 0.40%. The same can be said for the other areas described below.
  • FIG. 3 is an explanatory diagram showing test results corresponding to regions 1-2.
  • Fig. 13 shows
  • FIG. 4 is an explanatory diagram two-dimensionally representing the relationship between 0 and and the S AW speed based on the test results shown in FIG.
  • Figure 14 is based on the test results shown in FIG. 3 is an explanatory diagram representing a two-dimensional relationships between 0 Contact and the electromechanical coupling coefficient k 2.
  • FIGS. 3, 13 and 14 when the angle ⁇ is 0 °, the angle 0 is from 110 ° to 150 ° and the angle is from 60 ° to 80 °. Electric machine in the range ⁇ coupling coefficient k 2 becomes more 2% 0., SAW speed falls below 3 2 0 0 m / s
  • FIG. 4 is an explanatory diagram showing test results corresponding to the area 2-1.
  • FIG. 15 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the SAW speed based on the test results shown in FIG.
  • the first 6 figures based on the test results shown in FIG. 4 is an explanatory diagram representing a two-dimensional relationships between 0 Contact Yopi an electromechanical coupling coefficient k 2.
  • the angle 0 is between 30 ° and 60 ° and the angle between ⁇ 75 ° and 130 °.
  • the electromechanical coupling coefficient k 2 is more than 0.2% and the S AW speed is less than 320 OmZs. Even if ⁇ changes within the range of 7.5 ⁇ 2.5 °, the same combination as above exists.
  • the electromechanical coupling coefficient k 2 is 0.4% when the angle 3 is from 35 ° to 55 ° and the angle is from ⁇ 60 ° to 135 °.
  • ⁇ and ⁇ ⁇ ⁇ that are described above.
  • FIG. 5 is an explanatory diagram showing test results corresponding to the area 2-2.
  • FIG. 17 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the SAW speed based on the test results shown in FIG.
  • the first 8 figures based on the test results shown in FIG. 5 is an explanatory diagram representing a two-dimensional relationships between 0 Contact and the electromechanical coupling coefficient k 2. As is clear from FIGS. 5, 17 and 18, when the angle ⁇ is 10 °, the angle 0 is from 110 ° to 150 °, and the angle is from 85 ° to 1 °.
  • FIG. 6 is an explanatory diagram showing test results corresponding to region 3-1.
  • FIG. 19 FIG. 6 is an explanatory diagram two-dimensionally expressing the relationship between ⁇ and and the SAW speed based on the test results shown in FIG. 6.
  • the second 0 figures based on the test results shown in FIG. 6 is an explanatory diagram representing a two-dimensional relationships between 0 Contact and the electromechanical coupling coefficient k 2.
  • the angle 0 is from 30 ° to 60 ° and the angle is from —75 ° to 130 °.
  • the electromechanical coupling coefficient k 2 becomes 0.2% or more and the S AW speed becomes 310 OmZ s or less. Even if ⁇ changes within the range of 15 ⁇ 5 °, the same combination as above exists.
  • the electromechanical coupling coefficient k 2 is 0.4% or more when the angle 0 is from 35 ° to 55 ° and the angle is from 160 ° to 140 °.
  • FIG. 7 is an explanatory diagram showing a test result corresponding to the area 3-2.
  • FIG. 21 is an explanatory diagram two-dimensionally showing the relationship between 0 and and the SAW speed based on the test results shown in FIG.
  • FIG. 22 is an explanatory diagram two-dimensionally representing the relationship between ⁇ ⁇ and and the electromechanical coupling coefficient k 2 based on the test results shown in FIG.
  • FIG. 8 is an explanatory diagram showing test results corresponding to the region 4_1.
  • FIG. 23 is an explanatory diagram two-dimensionally showing the relationship between ⁇ and and the SAW speed based on the test results shown in FIG.
  • FIG. 24 is an explanatory diagram two-dimensionally expressing the relationship between 0 and and the electromechanical coupling coefficient k 2 based on the test results shown in FIG.
  • FIG. 9 is an explanatory diagram showing test results corresponding to regions 4-2.
  • FIG. 25 is an explanatory diagram two-dimensionally showing the relationship between 0 and and the SAW speed based on the test results shown in FIG. Figure 26, based on the test results shown in FIG. 9 is an explanatory diagram representing a two-dimensional relationships between 0 Contact and the electromechanical coupling coefficient k 2.
  • the angle 0 is from 110 ° to 150 °, and the angle is from ⁇ 75 ° to 1 °.
  • the electromechanical coupling coefficient k 2 becomes 0.2% or more and the S AW speed becomes 320 OmZ s or less. Even if ⁇ changes within the range of 25 ⁇ 5 °, the same combination as above exists.
  • the angle ⁇ is 25 °
  • the angle 0 ranges from 125 ° to 150 °
  • the angle mechanic coupling coefficient k 2 ranges from 75 ° to ⁇ 60 °.
  • FIG. 10 is an explanatory diagram showing test results corresponding to region 5. As is evident from Fig. 10, when the angle ⁇ is between 10 ° and 30 °, the angle 0 is between 30 ° and 90 °, and the angle is between 130 ° and 30 °, There are combinations of ⁇ , ⁇ , and ⁇ ⁇ ⁇ where the coupling coefficient k 2 becomes 0.2% or more and the SAW speed becomes 310 Om / s or less. Even if ⁇ changes within the range of 5 ° to 10 °, the same combination as above exists.
  • the cut-out angle and the propagation direction of the surface acoustic wave from the single crystal of the piezoelectric substrate 1 are in the regions 1-1, 1-1-2, 2--1, 2--2, 3--1, 3--2, 4-1-1, 4 It can be seen that a surface acoustic wave device having a sufficiently large electromechanical coupling coefficient and a small SAW velocity can be obtained if it is within any of the ranges of 2 and 5.
  • the piezoelectric substrate 1 has a good electromechanical coupling coefficient and a small SAW speed effective for downsizing the surface acoustic wave device. Further, by configuring the surface acoustic wave device using such a piezoelectric substrate 1, it is possible to broaden and downsize the surface acoustic wave device.
  • the present invention is not limited to the above embodiment, and various modifications are possible.
  • a large electromechanical coupling coefficient effective for broadening the pass band and a small S AW speed effective for miniaturizing the surface acoustic wave device are obtained. Obtainable.
  • a piezoelectric substrate having an AW speed can be used, a wider surface area and a smaller surface acoustic wave device can be realized.

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  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

On décrit un dispositif de traitement des ondes acoustiques de surface qui peut être à large bande et réduit du point de vue de ses dimensions et qui comprend un substrat piézo-électrique (1) et une paire d'électrodes interdigitées (2) prévues sur une surface principale du substrat piézo-électrique (1). Le matériau du substrat (1) comprend un monocristal qui appartient à la classe de symétrie 32, présente une structure cristalline de type CA3Ga2Ge4O14, comporte comme constituants principaux Ca, Nb, Si, Ga et O et qui est représenté par la formule Ca3NbGa3SiO14. Le fait de sélectionner de manière appropriée un angle de découpe et une direction de propagation du substrat (1) permet d'utiliser le substrat (1) qui présente un coefficient de couplage électromécanique élevé pour agrandir efficacement une bande passante et une faible vitesse des ondes acoustiques de surface (SAW) suffisante pour réduire la taille d'un dispositif de traitement des ondes acoustiques de surface.
PCT/JP2001/000812 2000-02-07 2001-02-06 Substrat piezo-electrique pour dispositif de traitement des ondes acoustiques de surface et dispositif de traitement des ondes acoustiques de surface WO2001059188A1 (fr)

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US6424081B1 (en) * 2000-05-03 2002-07-23 Crystal Photonics, Incorporated Electronic device including langasite structure compounds and method for making same
JP6369977B2 (ja) * 2014-05-07 2018-08-08 株式会社Ｐｉｅｚｏ Ｓｔｕｄｉｏ 圧電振動子
JP7210828B2 (ja) * 2018-03-06 2023-01-24 株式会社Piezo Studio 弾性表面波デバイス

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* Cited by examiner, † Cited by third party
Title
Mill B.V. et al , journal Neogancheskoj Chimie, vol.43, no. 8, 1998, pp. 1270-1277 *

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