WO2000055890A1 - Systeme d'exposition et procede de mesure d'aberration pour son systeme optique de projection, et procede de production pour ce dispositif - Google Patents

Systeme d'exposition et procede de mesure d'aberration pour son systeme optique de projection, et procede de production pour ce dispositif Download PDF

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Publication number
WO2000055890A1
WO2000055890A1 PCT/JP2000/001643 JP0001643W WO0055890A1 WO 2000055890 A1 WO2000055890 A1 WO 2000055890A1 JP 0001643 W JP0001643 W JP 0001643W WO 0055890 A1 WO0055890 A1 WO 0055890A1
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WIPO (PCT)
Prior art keywords
light
optical system
projection optical
exposure
measurement
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PCT/JP2000/001643
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English (en)
Japanese (ja)
Inventor
Jun Ishikawa
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Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU31939/00A priority Critical patent/AU3193900A/en
Publication of WO2000055890A1 publication Critical patent/WO2000055890A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Definitions

  • the present invention relates to an exposure apparatus, a method for measuring aberration of a projection optical system thereof, and a method for manufacturing a device.
  • the present invention relates to an exposure apparatus used in one step of photolithography in a manufacturing process of a microphone port device such as a semiconductor element, a liquid crystal display element, an imaging element, a thin film magnetic head, and the like.
  • a microphone port device such as a semiconductor element, a liquid crystal display element, an imaging element, a thin film magnetic head, and the like.
  • the present invention relates to a method for measuring aberration of a projection optical system and a method for manufacturing a micro device.
  • a mask pattern such as a reticle or a photomask is illuminated with exposure light, so that a predetermined pattern is applied via a projection optical system to a wafer or a glass plate coated with a photosensitive material such as a photoresist. Is transferred onto the substrate.
  • Exposure apparatuses using far ultraviolet pulsed light having a shorter wavelength have also been developed.
  • the aberration measurement of the projection optical system in the exposure apparatus is performed, for example, as follows. That is, a mask for aberration measurement is arranged on the object plane of the projection optical system, an image of a predetermined pattern is printed on a substrate arranged on the image plane of the projection optical system, and the printed image is developed. Then, the developed image is measured for the magnification and the degree of asymmetry of the image using a scanning electron microscope (SEM), and the aberration of the projection optical system is obtained based on the measurement result.
  • SEM scanning electron microscope
  • Shak k-Ha rt man sinha
  • the aberration of the projection optical system is measured as a wavefront aberration using the Koo-Hartmann method.
  • a light beam that has passed through a projection optical system is converted into parallel light by a collimator lens, and the parallel light is incident on a microlens array having a large number of lenses arranged two-dimensionally. Thereby, the parallel light is imaged on the imaging element for each lens.
  • the parallel light incident on the micro lens array has a parallel ideal wavefront, so that the light beam incident on each lens of the micro lens array is on the optical axis of each lens. It is imaged.
  • the projection optical system has an aberration
  • the parallel light incident on the microlens array has a wavefront that is distorted according to the aberration, so that the parallel light has a different wavefront for each lens. Will have a slope.
  • the light beam incident on each lens of the micro lens array is imaged at a position shifted from the optical axis of each lens according to the amount of inclination of the wavefront.
  • the aberration of the projection optical system is measured by calculating the inclination of the wavefront from the amount of lateral shift of the imaging position of the light beam for each lens.
  • Measurement of the wavefront aberration is based on the assumption that light having a spherical wave is incident on the projection optical system.
  • the spherical wave can be generated, for example, by vertically illuminating a pinhole mark on a mask arranged on the object plane of the projection optical system.
  • the pinhole mark is illuminated with the pulse light of the excimer laser to generate a spherical wave, the peak power of the excimer laser light is large, and the pinhole mark may be damaged. As a result, the accuracy of aberration measurement may not be sufficiently ensured.
  • An object of the present invention is to provide an exposure apparatus and an aberration measurement method capable of quickly and accurately measuring aberration of a projection optical system. Disclosure of the invention
  • an exposure apparatus for irradiating a pattern on a mask (R) with exposure light to form a pattern image on a substrate (W).
  • the exposure apparatus includes a projection optical system that projects a pattern image onto a substrate, a measurement light source (33) that emits measurement light (RL) different from the exposure light for measuring aberration of the projection optical system (PL). Then, a predetermined wavefront (SW) is generated in the measurement light (RL), and the measurement light having the predetermined wavefront is emitted.
  • Wavefront generating means (R t) to be incident on the shadow optical system (PL) Measuring means (35, 40) for measuring the aberration of the projection optical system (PL) based on the information.
  • the aberration of the projection optical system can be measured quickly and with high accuracy.
  • the light different from the exposure light is used as the measurement light, breakage of the wavefront generating means is prevented.
  • the measurement light (RL) having a peak power smaller than the exposure light (EL) is preferable to use the measurement light (RL) having a peak power smaller than the exposure light (EL) as the measurement light. In this case, breakage of the wavefront generating means is reliably prevented.
  • the exposure light (EL) may be pulsed light
  • the measurement light (RL) may be continuous light.
  • the peak power of the continuous light is lower than that of the measurement light having the predetermined wavefront, damage to the wavefront generating means can be reduced while securing the illuminance required for exposure.
  • the measurement light (RL) may be a solid laser light having a wavelength close to or coincident with the wavelength of the exposure light (EL) or a harmonic of the solid laser light. In this case, since the wavelength of the measurement light and the wavelength of the exposure light are close to or coincide with each other, accurate aberration information corresponding to actual exposure conditions can be obtained.
  • the wavefront generating means (Rt) may include a mask (Rt) having a pinhole (PH) arranged on the object plane of the projection optical system (PL).
  • a predetermined wavefront can be generated with a simple configuration.
  • the measuring means may be provided detachably with respect to the exposure apparatus main body. In this case, the aberration of the projection optical system can be measured quickly and accurately only when necessary.
  • a law is provided.
  • a predetermined wavefront (SW) is generated in the measurement light (RL), and the measurement light having the predetermined wavefront is incident on the projection optical system (PL).
  • the aberration of the projection optical system (PL) is measured based on the measurement light passing through the projection optical system (PL). With this measurement method, the aberration of the projection optical system can be measured quickly and with high accuracy. You. Further, since light different from the exposure light is used as the measurement light, breakage of the means for generating a wavefront is prevented.
  • a method for manufacturing a device is provided. First, a predetermined wavefront (S W) is generated in the measurement light (RL), and the measurement light having the predetermined wavefront is incident on the projection optical system (P L). Next, the aberration of the projection optical system (P L) is measured based on the measurement light passing through the projection optical system (P L), and the imaging characteristics of the projection optical system (P L) are adjusted based on the measurement result of the aberration.
  • the pattern on the mask (R) is irradiated with exposure light to form an image of the pattern on the substrate (W) via the projection optical system (PL).
  • FIG. 1 is a schematic configuration diagram of an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a wavefront aberration measurement unit of the exposure apparatus of FIG. 1 and an explanatory diagram of a method of generating a spherical wave.
  • FIG. 3 (a) is a diagram for explaining the measurement of the wavefront aberration of the wavefront aberration measurement unit in Fig. 2 when there is no aberration in the projection optical system
  • Fig. 3 (b) shows the aberration in the projection optical system
  • FIG. 3 is a diagram for explaining measurement of the wavefront aberration of the wavefront aberration measurement unit in FIG. 2 when the wavefront aberration is present.
  • the exposure apparatus 100 is used for manufacturing semiconductor devices, and can switch between scanning exposure and batch exposure.
  • the exposure light source 11 includes, for example, KrF excimer laser light, ArF excimer laser light, and F. Emit pulse exposure light EL such as excimer laser light. Dew The light EL enters the fly-eye lens 12 as an optical integrator composed of, for example, a number of lens elements, and the output surface of the fly-eye lens 12 corresponds to each lens element. A secondary light source image is formed. Note that a rod lens may be used instead of the fly-eye lens 12.
  • the exposure light EL emitted from the fly-eye lens 12 passes through the relay lens 13a, 13b, reticle plumbing 14, mirror 15 and condenser lens 16 through the mask placed on the reticle stage RST. Incident on the reticle R.
  • the circuit pattern of the semiconductor element is drawn on the reticle R.
  • the combined system of the fly-eye lens 12, the relay lens 13 a, 13 b, the mirror 15, and the condenser lens 16 is a secondary system formed near the exit of the flyer lens 12.
  • the illumination optical system 17 is configured to superimpose the light source image on the reticle R and illuminate the reticle R with uniform illuminance.
  • Reticle blind 14 has its light-shielding surface arranged in a conjugate relationship with the pattern surface of reticle R.
  • the reticle blind 14 includes a plurality of movable light shielding units (for example, two L-shaped movable light shielding units) that are opened and closed by a reticle blind driving unit 14a.
  • the illumination area of the reticle R is set by adjusting the size (slit width) of the opening formed by the movable light-shielding portion.
  • the reticle stage R ST holds the reticle R in a plane perpendicular to the optical axis AX of the exposure light EL so as to be finely movable in a two-dimensional direction.
  • the reticle stage R ST can be moved in a predetermined direction (scanning direction (Y direction)) by, for example, a reticle stage driving section 19 having a linear motor.
  • the reticle stage RST has a moving stroke that allows at least the entire surface of the reticle R to cross the optical axis AX of the exposure light EL. In FIG.
  • the direction of the optical axis of the projection optical system PL which will be described later, is the Z direction
  • the direction orthogonal to the optical axis of the projection optical system PL and the paper is the X direction
  • the direction along is the Y direction.
  • the reticle stage RST is provided with a movable mirror 21 for reflecting the laser beam from the interferometer 20.
  • the position of the reticle stage RS in the scanning direction is detected by the interferometer 20, and the position information is sent to the reticle stage controller 22.
  • Reticle stage control unit 22 is based on reticle stage RST position information. Then, the reticle stage drive section 19 is controlled to move the reticle stage RST.
  • the exposure light EL that has passed through the reticle R enters, for example, a double-sided telecentric projection optical system PL.
  • the projection optical system PL forms a projection image obtained by reducing the circuit pattern on the reticle R to, for example, 1-5 or 1Z4 on a wafer W on which a photosensitive photoresist is applied.
  • Wafer W is held on wafer stage WST via wafer holder 25.
  • the wafer holder 25 can be tilted in an arbitrary direction with respect to the optimal image forming plane of the projection optical system PL by a driving unit (not shown), and can be finely moved in the optical axis AX direction (Z direction) of the projection optical system PL.
  • the wafer stage WST is moved not only in the scanning direction (Y direction) but also in a direction perpendicular to the scanning direction (X direction) by the wafer stage driving unit 26 including a motor and partitioned on the wafer. It is configured to support multiple shot areas. With this configuration, a step-and-repeat operation for repeating batch exposure for each shot area on the wafer W and a step-and-scan operation for repeating scanning exposure can be performed.
  • a moving mirror 28 that reflects the laser beam from the interferometer 27 is attached to the wafer stage WST, and the positions of the wafer stage WST in the X and Y directions are detected by the interferometer 27.
  • the position information (or speed information) of wafer stage WST is sent to wafer stage control unit 29, and wafer stage control unit 29 controls wafer stage drive unit 26 based on this position information (or speed information).
  • the reticle blind 14 shapes the illumination area on the almost square reticle R. Then, with the reticle R and the wafer W both stationary, the image of the circuit pattern on the reticle R in this illumination area is collectively projected onto the shot area on the wafer W via the projection optical system PL. .
  • the illumination area on the rectangular (slit) reticle R is shaped by the reticle blind 14. This illumination area extends in a direction perpendicular to the scanning direction (+ Y direction) of the reticle R.
  • Vr the circuit pattern on the reticle R is sequentially illuminated from one end side to the other end side through a slit-shaped reticle blind 14. This Thus, the circuit pattern on reticle R is projected onto wafer W via projection optical system PL.
  • the wafer W Since the wafer W has an inverted image relationship with the reticle R, the wafer W is scanned at a predetermined speed V w in a direction opposite to the reticle scanning direction (one Y direction) in synchronization with the scanning of the reticle R. The entire W shot area can be exposed.
  • the scanning speed ratio Vw / Vr is accurately set according to the reduction magnification of the projection optical system PL, and the circuit pattern on the reticle R is accurately reduced and transferred onto each shot area on the wafer W.
  • a movable mirror 32 is provided between the fly-eye lens 12 and the relay lens 13a, and the movable mirror is provided by a movable mirror drive unit 32a.
  • Exposure light Enters and exits the EL light path.
  • a measurement light source 33 that emits the measurement light RL is arranged.
  • the measurement light RL is a continuous light having a wavelength substantially equal to the wavelength of the exposure light EL.
  • the measurement light RL has a smaller power than the exposure light EL.
  • the movable mirror 32 is disposed in the optical path of the exposure light EL when measuring the aberration of the projection optical system PL, reflects the measurement light RL emitted from the measurement light source 33, and uses the measurement light RL for the illumination optical system 1. From step 7, the light enters the projection optical system PL. During exposure, the movable mirror 32 is withdrawn from the optical path of the exposure light EL, and the measurement light R L is not irradiated onto the reticle R.
  • the continuous light may be, for example, a DFB semiconductor laser or a single-wavelength laser in the infrared or visible region oscillated from a fiber laser, for example, a fiber doped with erbium (or both erbium and itrium).
  • a harmonic obtained by amplifying with an amplifier and wavelength-converting the amplified laser light to ultraviolet light using a nonlinear optical crystal can be used.
  • the eighth harmonic within the range of 189 to 199 nm obtained from the laser can be used as the measurement light RL.
  • the 8th harmonic obtained from a narrow band having an oscillation wavelength in the range of 1.54 to 1.553 m is almost identical to the ArF excimer laser light. Since it has a wavelength in the range of 194 nm, it is more preferable as the measurement light RL.
  • a wavefront aberration measurement unit 35 for detecting the wavefront difference of the projection optical system PL is detachably mounted in the concave portion 34 formed on the wafer stage WST.
  • the wavefront aberration measurement unit 35 has a light receiving surface 36 having an area at least equal to or larger than the projection area, and the height of the light receiving surface 36 is substantially equal to the height of the surface of the wafer W. That is, the light receiving surface 36 substantially matches the image forming surface of the projection optical system PL.
  • the wavefront aberration measurement unit 35 includes a collimator lens 37, a microlens array 38, and an image sensor (CCD) 39.
  • the collimator lens 37 converts the light beam incident via the light receiving surface 36 into parallel light PB.
  • the microlens array 38 includes two-dimensionally arranged microlenses, divides the parallel light beam PB into a plurality of light beams, and the light beams are condensed by each microphone aperture lens.
  • the CCD 39 is a two-dimensional CCD, has an area large enough to receive all the light beams passing through the light receiving surface 36, and detects the position of the focal point (imaging position) of each lens. .
  • the CC 39 supplies a signal relating to the position of each focusing point to the wavefront aberration detection unit 40.
  • the wavefront aberration detection unit 40 calculates the wavefront aberration of the projection optical system PL based on the information on the position of each converging point, and outputs the wavefront aberration information to the main control system 41.
  • the main control system 41 controls the operation of the entire exposure apparatus.
  • the wavefront aberration measurement unit 35 and the wavefront aberration detection unit 40 constitute a measurement unit.
  • the first lens element 44 closest to the reticle R is fixed by a first support member 45
  • the second lens element 46 is a second support member. 4 Fixed by 7.
  • the lens element 48 below the second lens element 46 is fixed to the lens barrel 49.
  • the first support member 45 is connected to the second support member 47 via a plurality of expandable and contractible (for example, three, two in FIG. 1) first drive elements 50.
  • the second support member 47 is connected to the lens barrel 49 via a plurality of extendable and retractable second drive elements 51.
  • the driving elements 50 and 5 are connected to the imaging characteristic control unit 52.
  • the imaging characteristic control unit 52 adjusts the pressure between the lens elements in the barrel unit 49 of the projection optical system PL.
  • the pressure control unit 53 for adjusting the pressure is connected, and the main control system 41 is connected.
  • the main control system 41 sends the drive elements 50, 51 and the pressure control unit to the imaging characteristic control unit 52 based on the information on the wavefront aberration of the projection optical system PL from the wavefront aberration detection unit 40.
  • a test reticle Rt as a wavefront generating means is mounted on a reticle stage RST.
  • the test reticle Rt has a pinhole pattern PH having a predetermined diameter or an opening corresponding to the pinhole PH.
  • the position of the test reticle Rt is adjusted by the reticle stage controller 22 so that the pinhole PH is arranged on the optical axis of the illumination optical system 17 and the projection optical system PL.
  • the movable mirror 32 is caused to enter the optical path of the exposure light EL by the movable mirror drive unit 32a, and the light receiving surface 36 of the wavefront aberration measurement unit 35 is projected by the wafer stage drive unit 26 to the projection optical system. Arrange them so as to correspond to the PL projection area.
  • a wavefront aberration measuring device is constituted by the test reticle Rt and the wavefront aberration measurement unit 35.
  • the measurement light RL is emitted from the measurement light source 33, and the measurement light RL is transmitted to the test reticle via the movable mirror 132, the relay lenses 13a and 13b, the mirror 15 and the condenser lens 16. Irradiate the pinhole PH on Rt.
  • the measurement light RL passes through the pinhole P H, the measurement light RL is converted into light having a spherical wave SW.
  • Light having the spherical wave SW enters the projection optical system PL. If the projection optical system PL has a difference, the wavefront WF of the spherical wave SW is distorted.
  • the projection optical system has a spherical wave SW emitted from the projection optical system PL.
  • the light reaches the light receiving surface 36 of the wavefront aberration measurement unit 35 held on the wafer stage WST, and enters the inside of the wavefront aberration measurement unit 35.
  • the light having the incident spherical wave SW is converted by the collimator lens 37 into parallel light PB.
  • the wavefront WFpn of the parallel light PB becomes a plane as shown in FIG. 3 (a).
  • the projection optical system PL has an aberration, the wavefront WF pa of the parallel light PB is distorted as shown in FIG. 3 (b).
  • the parallel light PB is split into a plurality of light beams by the microlens array 38 and collected on the CCD 39.
  • the parallel light PB is the optical axis AXm of each lens. Incident along 1 For this reason, the condensing spot Fn of each lens exists on the optical axis AXm1 of each lens.
  • the wavefront aberration detection unit 40 is configured such that each of the condensing spot positions Fn preset in design assuming that the projection optical system has no aberration, and the projection optical system to be measured.
  • the light having the spherical wave SW passing through the system is condensed through the collimator lens 37 and the microphone aperture lens array 38, the light is collected based on the actual detection results of the respective light collection spot positions Fa.
  • the lateral shift amount of the actual condensing spot position F a with respect to the spot F n is obtained for each lens.
  • the wavefront aberration in the projection optical system PL is measured based on the lateral displacement amount.
  • the wavefront aberration information of the projection optical system PL obtained in this manner is supplied to the imaging characteristic control unit 52 via the main control system 41, and the imaging characteristic control unit 52 forms the projection optical system PL.
  • the image characteristics are corrected.
  • an exposure apparatus for manufacturing a semiconductor device can be manufactured.
  • the aberration measurement of the projection optical system When correcting the imaging characteristics of the projection optical system PL, the aberration measurement of the projection optical system must be performed. It may be performed immediately after completion, or after removing the test reticle Rt and the wavefront aberration measurement unit from the exposure apparatus main body. The manufacture of the exposure apparatus is completed when the test reticle Rt and the wavefront aberration measurement unit are removed from the exposure apparatus body.
  • the exposure apparatus 100 includes a measurement light source 33 that emits measurement light RL different from the exposure light EL.
  • the light having the measurement light RL is converted into light having the spherical wave SW by passing through the pinhole PH of the test reticle Rt, and the light having the spherical wave SW is obtained. Is incident on the projection optical system PL. Then, the aberration of the projection optical system PL is measured by the wavefront aberration measurement unit 35 and the wavefront aberration detection unit 40 based on the state of the light having the spherical wave SW that has passed through the projection optical system PL.
  • the aberration of the projection optical system PL can be measured as a wavefront aberration, and the aberration is measured quickly and with high accuracy.
  • the light having the spherical wave SW for measuring the aberration of the projection optical system PL is generated by converting the measurement light RL different from the exposure light EL.
  • the exposure light EL may be pulse light
  • the measurement light RL may be continuous light.
  • the peak power of the measurement light RL can be significantly reduced as compared with the exposure pulse light EL. Therefore, damage to the test reticle Rt is reduced while securing the illuminance required for exposure.
  • a harmonic of solid-state laser light having a wavelength substantially matching the wavelength of the exposure light EL may be used. In this case, it is possible to obtain accurate aberration information according to actual exposure conditions.
  • the exposure apparatus 100 is mounted on the reticle stage RST.
  • the measurement light RL is converted into light having a spherical wave SW by passing through the pinhole PH of the test reticle R. Therefore, light having a spherical wave SW can be generated with a simple configuration.
  • the wavefront aberration measurement unit 35 is provided detachably with respect to the wafer stage WST. Therefore, the wavefront aberration measurement unit 35 can be mounted on the wafer stage WST only when necessary, and the aberration of the projection optical system PL can be quickly and accurately measured. Therefore, the exposure apparatus 100 can be simplified.
  • the exposure apparatus 100 of the present embodiment includes an imaging characteristic control unit 52 that adjusts the imaging characteristic of the projection optical system PL based on the measured wavefront aberration. Therefore, based on the wavefront aberration of the projection optical system PL, the imaging characteristics of the projection optical system PL can be more accurately corrected. Therefore, the image of the circuit pattern on the reticle R can be transferred onto the wafer W with high precision, and the semiconductor element can be manufactured with high precision.
  • the exposure apparatus 100 of the present embodiment includes an imaging characteristic control unit 52 that adjusts the imaging characteristic of the projection optical system PL based on the measured wavefront aberration. For this reason, after assembling the exposure apparatus 100, the test reticle Rt is mounted on the reticle stage RST, and the wavefront aberration measurement unit 35 is mounted on the stage WST. Then, the light having the spherical wave SW passed through the projection optical system PL is received, and the wavefront aberration information of the projection optical system PL is calculated as described above.
  • the imaging characteristic control unit 52 automatically adjusts the relative position of the lens elements 44 and 45 or at least one of the pressures between the lens elements based on the obtained wavefront aberration information, so that the desired It is possible to adjust the exposure apparatus to have an imaging performance of By performing the automatic adjustment in this manner, the assembly of the exposure apparatus and the adjustment thereof can be performed in a short time.
  • the wavefront aberration measurement unit 35 may be detachably attached to a notch formed in a side surface or a corner portion of the wafer stage WST. Further, the wavefront aberration measurement unit 35 may be placed directly on the wafer stage WST or via the wafer holder 25. In this case, when measuring the wavefront aberration of the projection optical system PL, It is necessary to move the stage WST along the optical axis AX of the exposure light EL so that the light receiving surface 36 of the wavefront measurement unit 35 matches the image plane position of the projection optical system PL.
  • the measurement light source 33 and the movable mirror 32 may be detachably attached to the illumination optical system 17.
  • the movable mirror 32 may be of a fixed type.
  • the neutral density filter 70 is removed in the optical path between the flyer lens 12 and the exposure light source 11 instead of the measurement light source 33 and the mirror 32. It may be arranged as possible.
  • the neutral density filter 70 is preferably inserted in the optical path to reduce the peak power of the exposure light EL. In this case, there is no need to provide a new light source, and the exposure light source 11 can be used as it is.
  • the lens elements 4 4, 4 6 may be adjusted by selectively fitting washers having different thicknesses between the first and second plates.
  • the projection optical system PL may be housed in a plurality of divided lens barrels, and the imaging characteristics of the projection optical system PL may be adjusted by changing the distance between the lens barrels.
  • Exposure light instead of using excimer laser light as EL, use continuous light such as harmonics of a metal vapor laser or YAG laser, or emission lines of an ultra-high pressure mercury lamp such as g-line, h-line, or i-line. May be. In this case, the power of the measurement light RL can be reduced, and the durability of the pinhole pattern is improved.
  • the measurement light RL as a harmonic of a DFB semiconductor laser or fiber laser
  • a rare gas discharge lamp such as an argon lamp, a krypton lamp, or a xenon lamp, a xenon-mercury lamp, a halogen lamp, or a fluorescent lamp UV light, visible light or infrared light emitted from lamps, incandescent lamps, mercury lamps, sodium lamps, metal halide lamps, etc. Or higher harmonics.
  • the exposure light is pulse light
  • continuous light having a smaller peak power than the pulse light is used as the measurement light having light information different from that of the exposure light, or the exposure light —
  • An example of using light obtained by dimming the power using a neutral density filter has been described.
  • the present invention is not limited to this configuration, as long as the power of the measurement light passing through the pinhole PH formed in the test reticle is smaller than the power of the exposure light.
  • the optical information in the present embodiment includes not only the power of light, but also the type of light (for example, pulsed light or continuous light), light intensity, light illuminance, and the like.
  • the present invention may be embodied not only in the exposure apparatus 1 • 0 but also in an exposure apparatus that performs, for example, only batch exposure. Further, the present invention may be applied to an exposure apparatus for manufacturing a micro device such as a liquid crystal display element, an imaging element, and a thin film magnetic head, and an exposure apparatus for manufacturing a photomask such as a reticle.
  • a micro device such as a liquid crystal display element, an imaging element, and a thin film magnetic head
  • a photomask such as a reticle.
  • the projection optical system is not limited to a dioptric lens, but may be a reflective element (mirror) or a catadioptric system composed of a refractive lens and a reflective element. Further, the projection optical system is not limited to the reduction system, but may be a unit magnification system or an enlargement system.
  • the projection optical system uses a material that transmits far ultraviolet rays such as quartz or fluorite as a glass material.
  • the illumination optical system 17 and the projection optical system PL are incorporated into the main body of the exposure apparatus for optical adjustment.
  • the reticle stage RST and the wafer stage WST are mounted on the main body of the exposure apparatus, and wiring and piping are connected.
  • Exposure apparatus 100 can be manufactured by performing electrical adjustment, operation confirmation, etc.). It is desirable that the manufacture of the exposure apparatus 100 be performed in a clean room in which temperature, cleanliness, and the like are controlled.
  • a semiconductor device includes a step of designing device functions and performance, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a step of exposing a reticle pattern to a wafer by an exposure apparatus 100. It is manufactured through the following steps: exposure, device assembly (including dicing, bonding, and packaging) and inspection.
  • the present invention is not limited to the above-described embodiment, and it is also possible to adopt a configuration in which the embodiment and each of its modifications are combined as needed. Even when the exposure apparatus is configured in this manner, substantially the same effects as in the above embodiment can be obtained.

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Abstract

La présente invention concerne un système d'exposition capable de mesurer rapidement et avec précision une aberration d'un système optique de projection, une source de lumière de mesure (33) qui émet une lumière de mesure (RL) présentant une puissance inférieure à celle d'une lumière d'exposition (EL). A ce effet, on monte un réticule test à trou d'épingle sur un plateau de réticule (RST), et on fait passer la lumière par le trou d'épingle pour produire une onde sphérique dans la lumière de mesure (RL). On fait passer cette lumière de mesure porteuse d'onde sphérique par le système optique de projection (PL), et on la fait recevoir par un dispositif de mesure d'aberration d'onde (35) selon un procédé Jack-Hartam placé sur un plateau de tranche (WST), pour qu'un détecteur d'aberration d'onde (40) détermine une aberration (aberration d'onde) du système optique de projection (PL). Sur la base de l'aberration d'onde mesurée, on règle les caractéristiques du système optique de projection (PL).
PCT/JP2000/001643 1999-03-18 2000-03-17 Systeme d'exposition et procede de mesure d'aberration pour son systeme optique de projection, et procede de production pour ce dispositif WO2000055890A1 (fr)

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WO2003105202A1 (fr) * 2002-06-06 2003-12-18 株式会社日立製作所 Instrument de mesure des aberrations d'ondes, appareil d'exposition, systeme de fabrication d'un dispositif a semi-conducteurs et procede de fabrication de ce dernier
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