WO1999067658A1 - Panneau de scintillateur, capteur d'image de rayonnement et procede de production de ceux-ci - Google Patents

Panneau de scintillateur, capteur d'image de rayonnement et procede de production de ceux-ci Download PDF

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Publication number
WO1999067658A1
WO1999067658A1 PCT/JP1999/003265 JP9903265W WO9967658A1 WO 1999067658 A1 WO1999067658 A1 WO 1999067658A1 JP 9903265 W JP9903265 W JP 9903265W WO 9967658 A1 WO9967658 A1 WO 9967658A1
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WO
WIPO (PCT)
Prior art keywords
image sensor
polyparaxylylene film
scintillator
polyparaxylylene
radiation image
Prior art date
Application number
PCT/JP1999/003265
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English (en)
Japanese (ja)
Inventor
Takuya Homme
Toshio Takabayashi
Hiroto Sato
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to AU41682/99A priority Critical patent/AU4168299A/en
Publication of WO1999067658A1 publication Critical patent/WO1999067658A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output

Definitions

  • the present invention relates to a scintillator panel used for medical X-ray photography and the like, a radiation image sensor, and a method of manufacturing the same.
  • X-ray photosensitive films have been used in medical and industrial X-ray photography, but radiation imaging systems using radiation detection elements have become widespread in terms of convenience and preservation of imaging results.
  • pixel data based on two-dimensional radiation is acquired as an electric signal by a radiation detecting element, and this signal is processed by a processing device and displayed on a monitor.
  • a scintillator panel disclosed in Japanese Patent Application Laid-Open No. Sho 63-215987 has been known as a scintillator panel constituting a radiation detecting element.
  • This scintillator panel forms a columnar scintillator composed of CsI, which is a typical scintillator material, on a fiber optical plate (FOP), an optical member constructed by bundling a plurality of fibers. ing.
  • FOP fiber optical plate
  • each one of the scintillators having a columnar structure serves as a light guide and guides light generated by radiation to the light emitting surface. Resolution degradation is kept low.
  • Japanese Patent Application Laid-Open No. Sho 62-73553 / 38 discloses a technique for covering the gap of the scintillator with a material having a refractive index equal to or less than the refractive index of the scintillator.
  • Japanese Patent Application Laid-Open No. 6-1534 and Japanese Patent Application Laid-Open No. 9-61536 disclose a technique for covering the gap between the scintillations with a black substance.
  • An object of the present invention is to provide a scintillator panel, a radiation image sensor, and a method of manufacturing the same, which improve the moisture resistance of the scintillator panel and have a high resolution. Disclosure of the invention
  • the present invention provides a scintillation panel comprising a column-shaped scintillator formed on a substrate and a polyparaxylylene film covering at least a part of the columnar scintillator. It is characterized in that the film is a polyparaxylylene film that has been subjected to a color development treatment.
  • the polyparaxylylene film covering the scintillation is a polyparaxylylene film subjected to a color development process
  • the fluorescence transmitted through the interface of the columnar structure is subjected to the color development process.
  • the resolution of the scintillator panel can be improved by reducing the fluorescence crosstalk component absorbed by the film.
  • the present invention is characterized in that the color development of the polyparaxylylene film is performed by a heat color development. Further, the present invention is characterized by further comprising a polyparaxylylene film that covers the polyparaxylylene film subjected to the color development treatment. According to the present invention, since the polyparaxylylene film subjected to the color development treatment is further covered with the polyparaxylylene film, it is possible to improve the moisture resistance of the scintillator overnight.
  • the radiation image sensor of the present invention further includes a scintillation panel having a columnar structure scintillator formed on a substrate and a polyparaxylylene film covering at least a part of the columnar structure scintillator.
  • a scintillation panel having a columnar structure scintillator formed on a substrate and a polyparaxylylene film covering at least a part of the columnar structure scintillator.
  • the ren film is a polyparaxylylene film subjected to a color development treatment. According to the present invention, the resolution of the image sensor can be improved.
  • the present invention is characterized in that the substrate of the radiation image sensor is a translucent substrate, and the imaging element is arranged on the side of the substrate where the scintillation light is not formed.
  • the substrate of the radiation image sensor is a radiation-transmissive substrate, and the imaging element is disposed on the front end side of the scintillator formed on the substrate.
  • the present invention relates to a radiation image sensor comprising a columnar structure of scintillation formed on a light receiving surface of an image sensor and a polyparaxylylene film covering the columnar structure of scintillation, wherein the polyparaxylylene film is colored. It is a treated polyparaxylylene film.
  • the polyparaxylylene film covering the scintillation is a polyparaxylylene film subjected to a color development process
  • the fluorescence transmitted through the surface of the columnar structure is formed by the polyparaxylylene film subjected to the color development process.
  • the resolution of the radiation image sensor can be improved by absorbing and reducing the crosstalk component of the fluorescent light.
  • the present invention is characterized by further comprising a polyparaxylylene film covering the polyparaxylylene film subjected to the color development treatment.
  • the polyparaxylylene film that has been subjected to the color development treatment is further covered with the polyparaxylylene film, so that it is possible to improve the moisture resistance of the scintillator overnight.
  • the present invention provides a first step of forming a columnar structure of scintillation over a substrate, a second step of forming a polyparaxylylene film covering the columnar structure of scintillation, and a step of coloring the polyparaxylylene film. And (3) steps.
  • the polyparaxylylene covering the scintillation is colored to absorb the fluorescent light transmitted through the interface of the columnar structure by the colored polyparaxylylene film, and the fluorescence crosstalk occurs. Since the components are reduced, it is possible to manufacture a scintillator-evening panel with improved resolution.
  • This invention forms a polyparaxylylene film on a colored polyparaxylylene film.
  • the method is characterized by including a fourth step to be performed.
  • the polyparaxylylene film is further formed on the colored polyparaxylylene film, it is possible to manufacture a scintillation overnight panel having improved moisture resistance over a short time.
  • the present invention provides a first step of forming a columnar structure of scintillation on a light receiving surface of an image sensor, a second step of forming polyparaxylylene covering the columnar structure of scintillation, And a third step of coloring the xylylene film.
  • a first step of forming a columnar structure of scintillation on a light receiving surface of an image sensor a second step of forming polyparaxylylene covering the columnar structure of scintillation
  • a third step of coloring the xylylene film by causing the polyparaxylylene film covering the scintillation to develop color, the fluorescence transmitted through the interface of the columnar structure is absorbed by the polyparaxylylene film subjected to the color development process, and the crosstalk component of the fluorescence is reduced. Therefore, a radiation image sensor with improved resolution can be manufactured.
  • the present invention is characterized by including a fourth step of forming a polyparaxylylene film on the polyparaxylylene heated and colored. According to the present invention, since a polyparaxylylene film is further formed on the heated and colored polyparaxylylene film, it is possible to manufacture a radiation image sensor having improved moisture resistance over a short period of time. . BRIEF DESCRIPTION OF THE FIGURES
  • FIG. 1 is a cross-sectional view of a scintillator panel according to a first embodiment of the present invention.
  • FIG. 2A is a diagram showing a manufacturing step of the scintillation overnight panel according to the first embodiment of the present invention.
  • FIG. 2B is a diagram showing a manufacturing step of the scintillation overnight panel according to the first embodiment of the present invention.
  • FIG. 2C is a diagram showing a manufacturing step of the scintillation overnight panel according to the first embodiment of the present invention.
  • FIG. 3A shows a manufacturing process of a scintillation panel according to the first embodiment of the present invention.
  • FIG. 3B is a diagram showing a manufacturing step of the scintillation overnight panel according to the first embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 5A is a diagram illustrating a manufacturing process of the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 5B is a diagram showing a manufacturing process of the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 5C is a diagram illustrating a manufacturing process of the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 5D is a diagram showing a step of manufacturing the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 6A is a diagram illustrating a manufacturing process of the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 6B is a diagram showing a step of manufacturing the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 6C is a diagram showing a step of manufacturing the radiation image sensor according to the second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of the radiation image sensor according to the third embodiment of the present invention.
  • FIG. 8A is a diagram showing a manufacturing process of the radiation image sensor according to the third embodiment of the present invention.
  • FIG. 8B is a diagram showing a step of manufacturing the radiation image sensor according to the third embodiment of the present invention.
  • FIG. 8C is a view showing the manufacture of the radiation image sensor according to the third embodiment of the present invention. It is a figure showing a process.
  • FIG. 9A is a diagram illustrating a manufacturing process of the radiation image sensor according to the third embodiment of the present invention.
  • FIG. 9B is a diagram showing a step of manufacturing the radiation image sensor according to the third embodiment of the present invention.
  • FIG. 10 is a sectional view of a radiation image sensor according to a fourth embodiment of the present invention.
  • FIG. 11 is a sectional view of a radiation image sensor according to another embodiment of the present invention.
  • FIG. 1 is a sectional view of a scintillator panel 2 according to the embodiment.
  • a scintillator 12 having a columnar crystal structure for converting incident radiation into visible light is formed on one surface of the FOP 10 of the scintillator panel 2.
  • CsI of T1 dope is used.
  • the gap between the scintillator layers 12 of the columnar crystal structure formed in the FOP 10 is filled with polyparaxylylene film-formed on the surface of the scintillator layers 12 and subjected to a heat coloring process.
  • a polyparaxylylene film 16 as a moisture-resistant protective film is provided on the surface of the polyparaxylylene film 14 which has been subjected to the heat coloring process.
  • An A 1 film 18 is formed on the surface of 16 to improve moisture resistance.
  • the scintillator panel 2 is used as a radiation image sensor by being coupled to an image sensor (CCD) or the like (not shown) via FOP10. Further, a polyparaxylylene film for preventing the A 1 film 18 from peeling off may be formed on the A 1 film 18.
  • a columnar crystal of CsI doped with T1 is grown by an evaporation method, and the scintillator 12 has a column diameter of 10 im, 300 mm. It is formed with a thickness of m (see Fig. 2A).
  • the FOP 10 on which the scintillator 12 has been formed is put into a vapor deposition chamber of a CVD apparatus, and a polyparaxylylene film 14 is formed on the gaps and the surface of the scintillator 12 by a CVD method (vapor phase chemical growth method).
  • a CVD method vapor phase chemical growth method
  • the FOP 10 in which the polyparaxylylene film 14 was formed on the surface of the columnar crystal structure of scintillator 12 was taken out of the vapor deposition chamber of the CVD apparatus, and heated at 250 ° C. for 2 hours in a vacuum.
  • the polyparaxylylene film 14 is colored. That is, the structural formula of polyparaxylylene is
  • the FOP 10 on which the heating and coloring treatment of the polyparaxylylene film 14 has been completed is again put into the vapor deposition chamber of the CVD apparatus, and the polyparaxylylene film 16 is formed to a thickness of 10 m (FIG. 3).
  • A) then deposit the A1 film 18 to a thickness of 300 nm (See Figure 3B).
  • the A 1 film 18 is formed to cover the scintillator 12 because it aims at improving the moisture resistance of the scintillator 12.
  • the production of the scintillator panel 2 is completed.
  • the scintillator panel 2 since the polyparaxylylene film 14 formed on the surface of the scintillator column 12 having a columnar crystal structure is subjected to the heat coloring process, The fluorescence transmitted through the interface of the columnar crystal structure of the scintillator 12 is absorbed by the polyparaxylylene film 14 that has been subjected to the heating and coloring process, and the crosstalk component of the fluorescence is reduced, so that the resolution of the scintillator panel 2 is reduced. Can be improved. Further, since the polyparaxylylene film 14 subjected to the heat coloring process is further covered with the polyparaxylylene film, the moisture resistance of the scintillator can be improved.
  • FIG. 4 is a sectional view of the radiation image sensor 4 according to the embodiment.
  • the radiation image sensor 4 includes a large crystallized scintillator provided corresponding to the light receiving section 30 b of a thin film transistor + photodiode array (hereinafter referred to as a photodiode array) 30. It has a structure in which overnight 34 is covered with a polyparaxylylene film 36 which has been subjected to a heating and coloring process, and further covered with a polyparaxylylene film 38 for the purpose of improving moisture resistance.
  • the photodiode array 30 constituting the radiation image sensor 4 has a light receiving section 30b formed on a substrate 30a in an array with a pitch of 200 zm.
  • a switching element 30c of an amorphous silicon thin film transistor is provided corresponding to the light receiving section 30b.
  • a convex pattern 32 is formed by polyimide on the light receiving portion 30b of the photodiode array 30 (see FIG. 5B).
  • a columnar crystal of CsI doped with T1 is grown by vapor deposition to form a mass of scintillator 34 corresponding to the light-receiving portion 3Ob (see FIG. 5C), which contains water vapor. Exposure to air for 40 hours In this way, water is added to and dissolved in the scintillator 34 to make it large crystallization, preferably single crystallization (see Fig. 5D).
  • the photodiode array 30 on which the scintillation light 34 is formed is put into a vapor deposition chamber of a CVD apparatus, and the polycrystalline xylylene material is exposed to sublimated vapor, whereby the large crystallized scintillation light is exposed.
  • a poly-p-xylylene film 36 is formed on the surface of overnight 34 (see Fig. 6 ⁇ ).
  • the photodiode array 30 having the polyparaxylylene film 36 formed on the surface of the scintillator 34 is taken out of the deposition chamber of the CVD apparatus and heated at 250 ° C. for 1 hour in a vacuum. This causes the polyparaxylylene film 36 to develop color (see FIG. 6B).
  • the photodiode array 30 on which the heating and coloring treatment of the polyparaxylylene film 36 has been completed is put into the vapor deposition chamber of the CVD apparatus again, and the polyparaxylylene film 38 is formed to a thickness of 10. Film (see Figure 6C).
  • this step is completed, the manufacture of the radiation image sensor 4 is completed.
  • the polyparaxylylene film 36 formed on the surface of the large crystallized scintillator 34 is subjected to the heat coloring process.
  • the fluorescent light transmitted through the interface of the scintillator 34 is absorbed by the polyparaxylylene film 36 subjected to the heating and coloring treatment, and the crosstalk component of the fluorescent light is reduced, thereby improving the resolution of the radiation image sensor 4. be able to.
  • the polyparaxylylene film 36 that has been subjected to the heat coloring process is further covered with the polyparaxylylene film 38, the moisture resistance of the scintillator 34 can be improved.
  • FIGS. 7 to 9B a third embodiment of the present invention will be described with reference to FIGS. 7 to 9B.
  • the radiation image according to the second embodiment is described.
  • the same components as those of the image sensor 4 are denoted by the same reference numerals as those used in the description of the radiation image sensor 4 and described.
  • FIG. 7 is a sectional view of the radiation image sensor 6 according to the embodiment.
  • the radiation image sensor 6 heats the portion other than the tip of the large-crystallized scintillator 34 provided corresponding to the light receiving portion 30a of the photodiode array 30. It is covered with a polyparaxylylene film 36 which has been subjected to a color development treatment, and the thin film 34 is further covered with a polyparaxylylene film 38 and an A1 film 40 and an A1 film 40 for the purpose of moisture resistance. It has a structure covered with a polyparaxylylene film 42 for preventing peeling.
  • the large crystal formed on the light receiving portion 30b of the photodiode array 30 is manufactured by the same process as the manufacturing process of the radiation image sensor 4 according to the second embodiment shown in FIGS. 5A to 6C.
  • the converted scintillator overnight 34 is covered with a polyparaxylylene film 36 heated and colored (see Fig. 8A).
  • the photodiode array 30 was removed again by the CVD apparatus (see FIG. 8B). Then, a polyparaxylylene film 38 is formed to a thickness of 10 ⁇ m (see FIG. 8C).
  • an A1 film 40 which is a moisture-resistant film, is formed to a thickness of 100 nm by a vacuum evaporation method (see FIG. 9A).
  • a polyparaxylylene film 42 for preventing peeling of the A1 film 40 is formed on the 40 by the same method as that for forming the polyparaxylylene film 38 (see FIG. 9B).
  • a radiation image sensor 7 according to a fourth embodiment of the present invention will be described with reference to FIG.
  • the same components as those of the radiation image sensor 6 according to the third embodiment have the same reference numerals as those used in the description of the radiation image sensor 6. Description will be made with reference numerals.
  • the radiation image sensor 7 After removing the heated and colored polyparaxylylene film 36, the radiation image sensor 7 forms a large crystallized scintillation film 3 on the polyparaxylylene film 38 located above the scintillation film 34.
  • An A1 film 39 which is a reflective film, is formed in correspondence with each of the 4 layers, and a polyparaxylylene film 41 to prevent peeling of the A1 film 39 is formed on it.
  • the polyparaxylylene film 42 for preventing the A1 film 40 and the A1 film 40 from peeling off is formed sequentially.
  • the light traveling in the direction of the A1 film 39 is reflected by the A1 film 39 and received by the photodiode array 30. Since the light travels in the direction of the portion 30b, the light incident on the light receiving portion 30b can be increased.
  • polyparaxylylene polymonoxylylene, polymonochloroparaxylylene, polydichloroparaxylylene, polytetracloxparaxylylene, polyfluoroparaxylylene, polydimethylparaxylylene, polyjenyl Tyl paraxylylene, and the like.
  • the color is developed by heating polyparaxylylene.
  • the present invention is not limited to this, and electron beams, electromagnetic waves (ultraviolet rays, X-rays) of high energy, and neutron beams are irradiated. In some cases, the color can be developed.
  • polyparaxylylene is heated in a vacuum.
  • the present invention is not limited to this, and polyparaxylylene may be heated in air.
  • polyparaxylylene is heated at 250 ° C. for 2 hours
  • polyparaxylylene is heated at 250 ° C. for 1 hour.
  • the heating temperature and the heating time are not limited to these, and can be appropriately selected according to the degree of color development of polyparaxylylene.
  • C si (T 1) is used as a short notice, but the present invention is not limited to this, and Cs l (Na), N a I (T l), L i I ( Eu), KI (T 1) and the like may be used.
  • the FOP 10 is used as a substrate for forming a scintillation image, and an image sensor (CCD) is arranged on the FOP 10 side to be used as a radiation image sensor.
  • a glass substrate may be used as a substrate for forming the evening.
  • a glass substrate and an image sensor are combined using a lens and used as a radiation image sensor.
  • a substrate made of amorphous carbon containing carbon as a main component a substrate made of C (graphite), a substrate made of A1, a substrate made of Be, a substrate made of SiC, or the like may be used.
  • an image sensor CCD is arranged on the side of the scintillator to use it as a radiation image sensor.
  • FIG. 11 shows a radiation image sensor 8 in which an imaging element 52 is arranged on the front end side of a scintillator 34 formed on a substrate 50 made of A1.
  • the polyparaxylylene film 36 formed on the surface of the side wall portion of the large-crystallized scintillator 34 is subjected to a heating and coloring process.
  • the fluorescence that has passed through is absorbed by the polyparaxylylene film 36 that has been subjected to the heating and coloring process, and the crosstalk component of the fluorescence is reduced, so that the resolution of the radiation image sensor 8 can be improved.
  • the photodiode array 30 is used as the substrate for forming the scintillation light.
  • the present invention is not limited to this. It may be.
  • an A1 film may be further formed on the polyparaxylylene film 38.
  • the moisture resistance can be further improved.
  • the polyparaxylylene film covering the scintillator panel is a polyparaxylylene film subjected to a color development process
  • the crosstalk component of the fluorescence can be reduced. Resolution can be improved.
  • the polyparaxylylene film subjected to the color development treatment is further covered with the polyparaxylylene film, the moisture resistance of the scintillation can be improved.
  • the polyparaxylylene film covering the scintillation is a polyparaxylylene film subjected to a color development process
  • the crosstalk component of the fluorescence can be reduced. Resolution can be improved.
  • the polyparaxylylene film subjected to the color development treatment is further covered with the polyparaxylylene film, it is possible to improve the moisture resistance of the scintillator overnight.
  • a polyparaxylylene film covering the scintillator panel is colored to reduce a fluorescent crosstalk component and improve resolution. Can be manufactured.
  • a polyparaxylylene film is further formed on the colored polyparaxylylene film, it is possible to manufacture a scintillation panel with improved moisture resistance in the scintillation mode.
  • a cross-talk component of fluorescence is reduced by coloring a polyparaxylylene film covering the scintillator, thereby manufacturing a radiation image sensor with improved resolution. be able to. Further, since a polyparaxylylene film is further formed on the color-developed polyparaxylylene film, a radiation image sensor with improved moisture resistance over a short time can be manufactured.
  • the radiation image sensor according to the present invention is suitable for use in medical and industrial X-ray photography and the like.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

L'invention concerne un panneau (2) de scintillateur qui comporte: un FOP (10); des scintillateurs (12), chacun de ceux-ci présentant une structure cristalline colonnaire formée sur une surface du FOP (10); du poly(p-xylylène) (14) qui a été soumis à un traitement thermique pour obtenir un développement de couleur, et au moyen duquel les espaces situés entre les scintillateurs (12) sont remplis, et dont les scintillateurs (12) sont revêtus; un film (16) de poly(p-xylylène) formé sur la surface du poly(p-xylylène) (14) comme film protecteur résistant à l'humidité; et un film (18) d'aluminium formé sur le film (16) pour accroître la résistance à l'humidité.
PCT/JP1999/003265 1998-06-23 1999-06-18 Panneau de scintillateur, capteur d'image de rayonnement et procede de production de ceux-ci WO1999067658A1 (fr)

Priority Applications (1)

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AU41682/99A AU4168299A (en) 1998-06-23 1999-06-18 Scintillator panel, radiation image sensor, and process for producing the same

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JP10/175838 1998-06-23
JP17583898A JP4156709B2 (ja) 1998-06-23 1998-06-23 シンチレータパネル、放射線イメージセンサ及びその製造方法

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WO2002086540A1 (fr) * 2001-04-23 2002-10-31 Siemens Aktiengesellschaft Convertisseur de rayonnement avec couche de substance luminescente
US6753531B2 (en) 1999-04-09 2004-06-22 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7034306B2 (en) 1998-06-18 2006-04-25 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor

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JP2003075593A (ja) * 2001-08-30 2003-03-12 Toshiba Corp 放射線シンチレータならびに画像検出器およびその製造方法
JP4612815B2 (ja) * 2004-08-10 2011-01-12 キヤノン株式会社 放射線検出装置、シンチレータパネル、これらの製造方法及び放射線検出システム
WO2007060813A1 (fr) 2005-11-22 2007-05-31 Konica Minolta Medical & Graphic, Inc. Plaque de scintillateur
DE102006022138A1 (de) * 2006-05-11 2007-11-15 Siemens Ag Szintillatorplatte
JP2010121997A (ja) * 2008-11-18 2010-06-03 Fujifilm Corp 放射線画像検出器
JP2011128085A (ja) * 2009-12-18 2011-06-30 Canon Inc 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
JP5883556B2 (ja) 2010-06-04 2016-03-15 浜松ホトニクス株式会社 放射線イメージセンサ
JP5456013B2 (ja) 2010-12-17 2014-03-26 富士フイルム株式会社 放射線撮像装置
JP2012163396A (ja) * 2011-02-04 2012-08-30 Toshiba Corp シンチレータパネル及び放射線検出器
JP7199332B2 (ja) * 2019-10-07 2023-01-05 キヤノン電子管デバイス株式会社 放射線検出モジュールの製造方法

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JPH09115898A (ja) * 1995-10-23 1997-05-02 Sony Corp 誘電体膜の成膜方法

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JPH09115898A (ja) * 1995-10-23 1997-05-02 Sony Corp 誘電体膜の成膜方法

Cited By (6)

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Publication number Priority date Publication date Assignee Title
US7034306B2 (en) 1998-06-18 2006-04-25 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7408177B2 (en) 1998-06-18 2008-08-05 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7705315B2 (en) 1998-06-18 2010-04-27 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US6753531B2 (en) 1999-04-09 2004-06-22 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US6911658B2 (en) 1999-04-09 2005-06-28 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
WO2002086540A1 (fr) * 2001-04-23 2002-10-31 Siemens Aktiengesellschaft Convertisseur de rayonnement avec couche de substance luminescente

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