WO1998044522A3 - Capacitor structure - Google Patents

Capacitor structure Download PDF

Info

Publication number
WO1998044522A3
WO1998044522A3 PCT/DE1998/000817 DE9800817W WO9844522A3 WO 1998044522 A3 WO1998044522 A3 WO 1998044522A3 DE 9800817 W DE9800817 W DE 9800817W WO 9844522 A3 WO9844522 A3 WO 9844522A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
conductive layer
layer
blind holes
capacitor structure
Prior art date
Application number
PCT/DE1998/000817
Other languages
German (de)
French (fr)
Other versions
WO1998044522A2 (en
Inventor
Reinhard Losehand
Original Assignee
Siemens Ag
Reinhard Losehand
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Reinhard Losehand filed Critical Siemens Ag
Publication of WO1998044522A2 publication Critical patent/WO1998044522A2/en
Publication of WO1998044522A3 publication Critical patent/WO1998044522A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Abstract

The invention relates to a capacitor structure. According to the invention, a plurality of blind holes is provided in a first electrically conductive layer, said blind holes extending from a first main surface of said first electrically conductive layer. The inside walls of the blind holes are provided with a dielectric layer, a second electrically conductive layer being arranged on said dielectric layer. The edge area of the capacitor is covered by an insulating layer and the second electrically conductive layer is provided with a multi-layer contact metallic coating.
PCT/DE1998/000817 1997-03-27 1998-03-19 Capacitor structure WO1998044522A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1997113052 DE19713052A1 (en) 1997-03-27 1997-03-27 Capacitor structure
DE19713052.6 1997-03-27

Publications (2)

Publication Number Publication Date
WO1998044522A2 WO1998044522A2 (en) 1998-10-08
WO1998044522A3 true WO1998044522A3 (en) 1999-01-07

Family

ID=7824900

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/000817 WO1998044522A2 (en) 1997-03-27 1998-03-19 Capacitor structure

Country Status (2)

Country Link
DE (1) DE19713052A1 (en)
WO (1) WO1998044522A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19940825A1 (en) * 1999-08-27 2001-04-05 Infineon Technologies Ag Capacitor structure
DE10158798A1 (en) * 2001-11-30 2003-06-18 Infineon Technologies Ag Capacitor and method of making a capacitor
US6984860B2 (en) * 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
JP5141740B2 (en) * 2010-10-04 2013-02-13 株式会社デンソー Semiconductor device and manufacturing method thereof
CN110310997B (en) * 2019-05-20 2022-09-09 中国电子科技集团公司第五十五研究所 MIS chip capacitor with high capacitance density

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515824A2 (en) * 1991-05-31 1992-12-02 Sumitomo Electric Industries, Ltd Capacitor element
EP0528281A2 (en) * 1991-08-14 1993-02-24 Siemens Aktiengesellschaft Structure of circuit having at least a capacitor and process of fabrication
DE4428195C1 (en) * 1994-08-09 1995-04-20 Siemens Ag Method for producing a silicon capacitor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
JPS6151869A (en) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp Semiconductor memory device and manufacture thereof
JPS62265732A (en) * 1986-05-13 1987-11-18 Nec Corp Hybrid integrated circuit device
JP2977049B2 (en) * 1991-02-27 1999-11-10 国際電気株式会社 Electronic functional circuit device for surface mounting

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515824A2 (en) * 1991-05-31 1992-12-02 Sumitomo Electric Industries, Ltd Capacitor element
EP0528281A2 (en) * 1991-08-14 1993-02-24 Siemens Aktiengesellschaft Structure of circuit having at least a capacitor and process of fabrication
DE4428195C1 (en) * 1994-08-09 1995-04-20 Siemens Ag Method for producing a silicon capacitor

Also Published As

Publication number Publication date
DE19713052A1 (en) 1998-10-01
WO1998044522A2 (en) 1998-10-08

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