WO1998044522A3 - Structure de condensateur - Google Patents

Structure de condensateur Download PDF

Info

Publication number
WO1998044522A3
WO1998044522A3 PCT/DE1998/000817 DE9800817W WO9844522A3 WO 1998044522 A3 WO1998044522 A3 WO 1998044522A3 DE 9800817 W DE9800817 W DE 9800817W WO 9844522 A3 WO9844522 A3 WO 9844522A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
conductive layer
layer
blind holes
capacitor structure
Prior art date
Application number
PCT/DE1998/000817
Other languages
German (de)
English (en)
Other versions
WO1998044522A2 (fr
Inventor
Reinhard Losehand
Original Assignee
Siemens Ag
Reinhard Losehand
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Reinhard Losehand filed Critical Siemens Ag
Publication of WO1998044522A2 publication Critical patent/WO1998044522A2/fr
Publication of WO1998044522A3 publication Critical patent/WO1998044522A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne une structure de condensateur, dans laquelle une pluralité de trous borgnes est prévue dans une première couche électroconductrice, lesdits trous s'étendant à partir d'une première surface principale de cette première couche électroconductrice. Les parois internes des trous borgnes sont pourvues d'une couche diélectrique sur laquelle se trouve une deuxième couche électroconductrice. La zone marginale du condensateur est recouverte d'une couche isolante et la deuxième couche électroconductrice est pourvue d'une métallisation des contacts multicouche.
PCT/DE1998/000817 1997-03-27 1998-03-19 Structure de condensateur WO1998044522A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19713052.6 1997-03-27
DE1997113052 DE19713052A1 (de) 1997-03-27 1997-03-27 Kondensatorstruktur

Publications (2)

Publication Number Publication Date
WO1998044522A2 WO1998044522A2 (fr) 1998-10-08
WO1998044522A3 true WO1998044522A3 (fr) 1999-01-07

Family

ID=7824900

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/000817 WO1998044522A2 (fr) 1997-03-27 1998-03-19 Structure de condensateur

Country Status (2)

Country Link
DE (1) DE19713052A1 (fr)
WO (1) WO1998044522A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19940825A1 (de) * 1999-08-27 2001-04-05 Infineon Technologies Ag Kondensatorstruktur
DE10158798A1 (de) * 2001-11-30 2003-06-18 Infineon Technologies Ag Kondensator und Verfahren zum Herstellen eines Kondensators
US6984860B2 (en) * 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
JP5141740B2 (ja) * 2010-10-04 2013-02-13 株式会社デンソー 半導体装置およびその製造方法
CN110310997B (zh) * 2019-05-20 2022-09-09 中国电子科技集团公司第五十五研究所 一种高电容密度的mis芯片电容

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515824A2 (fr) * 1991-05-31 1992-12-02 Sumitomo Electric Industries, Ltd Elément de condensateur
EP0528281A2 (fr) * 1991-08-14 1993-02-24 Siemens Aktiengesellschaft Structure de circuit comprenant au moins un condensateur et son procédé de fabrication
DE4428195C1 (de) * 1994-08-09 1995-04-20 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JPS62265732A (ja) * 1986-05-13 1987-11-18 Nec Corp 混成集積回路装置
JP2977049B2 (ja) * 1991-02-27 1999-11-10 国際電気株式会社 面実装用電子機能回路装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0515824A2 (fr) * 1991-05-31 1992-12-02 Sumitomo Electric Industries, Ltd Elément de condensateur
EP0528281A2 (fr) * 1991-08-14 1993-02-24 Siemens Aktiengesellschaft Structure de circuit comprenant au moins un condensateur et son procédé de fabrication
DE4428195C1 (de) * 1994-08-09 1995-04-20 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators

Also Published As

Publication number Publication date
WO1998044522A2 (fr) 1998-10-08
DE19713052A1 (de) 1998-10-01

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