WO1995023879A1 - Process for producing layers of cubic boron nitride - Google Patents
Process for producing layers of cubic boron nitride Download PDFInfo
- Publication number
- WO1995023879A1 WO1995023879A1 PCT/DE1995/000315 DE9500315W WO9523879A1 WO 1995023879 A1 WO1995023879 A1 WO 1995023879A1 DE 9500315 W DE9500315 W DE 9500315W WO 9523879 A1 WO9523879 A1 WO 9523879A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- target
- layer
- production
- layers
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
Definitions
- the invention relates to the field of the production of wear-resistant layers or the production of layers with certain wear properties. It relates to a process for the production of wear-resistant layers made of cubic boron nitride (cBN) or connecting layers with a high cBN content.
- cBN cubic boron nitride
- cBN In the field of manufacturing technology, cBN has the essential advantage over diamond that it is inert to steel and thus enables the machining of workpieces containing iron. This important area of production is not accessible to diamond tools due to chemical wear of the diamond.
- the cBN layers are produced with the aid of an ion-assisted laser pulse method.
- An hBN target is used.
- the ion bombardment is carried out by applying a DC voltage potential.
- PVD processes are essentially used in hard film production in general, the plasma being generated for economic reasons with the aid of direct current arc discharges (ARC process) or with the help of magnetron cathodes operated with direct current.
- direct current operation also has the particular advantage that large-area coating systems can be implemented with it.
- the object of the invention which includes proposing a method for producing hard and wear-resistant cBN layers or layers containing cBN, which does not have all the disadvantages of the prior art, is therefore to specify a method of the type mentioned which, in addition to a high degree Coating rate also allows the deposition at low substrate temperatures, which is not limited to small substrates, and which is economically advantageous and inexpensive to operate.
- cBN layers or layers containing cBN can also be obtained using boron carbide (B 4 C) targets which contain approximately 20% carbon. let it separate.
- B 4 C boron carbide
- an output target is inventively used , on which the material removal for the layer production takes place, is made of electrically conductive material.
- This target preferably consists of boron carbide, advantageously in the composition range from 90at% to 70at% boron and 10at% to 30at% carbon (eg B 4 C).
- B- and / or BN- doped with metal eg Ti, Mo, Ta, Cr, Cu, Ni and / or Al
- metal eg Ti, Mo, Ta, Cr, Cu, Ni and / or Al
- borides or nitrides are used as starting targets.
- the reactive process is carried out with the addition of Ar and N 2 in such a way that the required B: N stoichiometry can be set in the layer.
- the process should be carried out in such a way that the carbon content in the cBN layer or in the cBN-containing layer is reduced to values ⁇ 5at%.
- a reduced incorporation of carbon in the layer and the required adjustment of the BN ratio is achieved so that the process is carried out in an Ar / N 2 gas mixture.
- an increased oxygen content in the working gas would reduce its proportion in the layer by selective reaction with the carbon.
- a low oxygen partial pressure is particularly favorable for high proportions of the cubic phase in the layers.
- a gradient layer should be deposited on the substrate before the actual cBN layer without interrupting the vacuum process, for example by stepwise, continuous variation of the process gas composition and the process conditions .
- the substrate holder before the coating with a layer of BC / BN boron carbide and / or Born 'itrid
- microns with a thickness of 0.1 to 0.5
- the high-frequency coupling be coupled in on the target and also on the substrate side, or alternatively, direct voltage (DC) on the substrate side, with a negative bias voltage ( Bias voltage) in the range of 100 to 1,000 V (for example 300 to 500 V), there is an area-related power between 3 and 17 W / cnr ⁇ (e.g.
- the substrate temperature is kept at a temperature in the range between 30 ° C and 500 ° C (eg at an equilibrium temperature of 350 ° C), as an Ar / N process gas 2 gas mixture, the N 2 content in the gas mixture being 5% to close to 100% (eg 10 to 70%), and the process pressure being set in the range from 1 to 50 ⁇ bar (eg 20 ⁇ bar).
- a high-frequency bias (HF bias) or a DC voltage to the substrate holder.
- HF bias high-frequency bias
- a bias voltage of 100 - 800 V is advantageous, and if a high-frequency bias voltage is applied to the substrate holder, a bias voltage would be in the range of 100 V to 1,000 V (e.g. from 200 V) up to 500 V) should preferably be applied.
- the process should generally be run with additional magnetic field support in order to favor the production of the desired layers.
- This magnetic field support is sensibly carried out in such a way that flux densities of about 4 - 7 mT are achieved by means of a coil built into the recipient, or the additional magnetic field support is achieved by installing additional magnets or electromagnetic coils in such a way that maximum ion current compression takes place with respect to the substrate.
- the process according to the invention is very economical, inexpensive and does not have all the disadvantages of the prior art, which makes its use extremely advantageous.
- An additional advantage of the high-frequency sputtering method and DC magnetron method is that the process heat available in this method is sufficient so that external heating of the samples can be dispensed with.
- boron-containing gases eg diborane or trimethylborazine
- the method according to the invention can advantageously be used in various fields of application. For example, it is advantageous for the production of wear-resistant tools (e.g.
- cBN cubic boron nitride
- cBN layers consisting of components B, C and N are already known. Their advantage is, inter alia, that they have high mechanical strengths combined with good optical transparency and thus show advantages over the comparatively hard amorphous hydrocarbon layers, but which are not transparent in the visible spectral range.
- Another advantage of the cBN layer is its low coefficient of friction ⁇ , which is ⁇ 0.2 and comparable to diamond layers.
- ⁇ is ⁇ 0.2 and comparable to diamond layers.
- Such cBN layers have very good sliding properties, so that they can advantageously be used to coat mechanically abrasive and / or adhesively stressed components as well as bearings and / or bearing components. So far, however, it has not yet been possible to generate the hard cubic phase in such layers in a simple, cost-effective manner.
- CBN and wBN are aimed for in an equivalent manner.
- the two phases cBN and wBN, whose density is identical, are to be regarded as equivalent insofar as in both Modifications B and N atoms are coordinated fourfold and the same short-range order is present.
- cBN can also be understood to mean a nanocrystalline or amorphous material which has an sp3 hybrid bond for the elements B and N.
- cBN means only the hard phases cBN and wBN.
- a target cleaning phase and a simultaneous ion etching cleaning of the substrates separated by a mechanical shutter take place before the actual layer application.
- the shutters were opened during the layer production.
- Silicon wafers (orientations 100 and 111) were used as substrates, as well as steel samples made of 100 Cr6, HSS (High Speed Steel), hard metals, molybdenum and stainless steel.
- a method has proven to be particularly advantageous in which the layer is produced in a high-frequency diode sputtering system.
- bias voltages negative bias voltages
- DC direct current
- the desired properties of the layers to be produced are listed below Obtained using a conductive target from B 4 C. For this purpose, area-related powers of 6 W / cm * are applied to the target.
- the substrate electrode has a power of 2 W / cm *, the electrodes with a diameter of approx. 170 mm lying opposite each other at a distance of approx. 100 mm.
- the substrate electrode can be covered with BC or other B-containing materials. However, a steel plate or other metal can also be used.
- the process is expediently carried out with the aid of a magnetic field in such a way that flux densities of approximately 4 to 7 mT are produced by means of a coil installed in the receiver and thus the production of the desired layers is favored. It is not necessary to heat the samples. Due to the heat of the process, the substrates reach an equilibrium temperature of up to 350 ° C during the coating.
- the cubic boron nitride layer is created using a gas mixture of Ar and N 2 , the process pressure being 20 ⁇ bar.
- the N 2 content in the gas mixture was in the range of 50-70% of the total flow.
- UBM unbalanced magnetron
- the substrate holder can be operated with an RF bias as well as with a DC bias.
- a commercial system with a vertically arranged magnetron cathode with additional coils was used for an unbalanced sputtering operation (UBM).
- the BC Target used had dimensions of 254 mm x 127 mm.
- the substrate holder which consisted of a stainless steel plate, was arranged at a distance of 80 mm to 150 mm.
- the substrate holder was rotatable, so that intermediate layers could also be applied during a vacuum cycle, in which the substrate holder was moved in front of a second magnetron cathode, which was arranged offset by 90 °.
- a second magnetron cathode which was arranged offset by 90 °.
- significantly higher deposition rates are achieved here.
- relatively large substrates can be coated with such a system.
- additional magnetic coils and possibly bar magnets are installed in such a way that maximum ion current compression takes place with respect to the substrate.
- Substrate holder on high-frequency bias In this case, a high-frequency power of 300 W was applied to the substrate. This results in a bias voltage of 200 V to 500 V.
- the substrate holder into which high frequency is fed is at a distance of 80 to 150 mm to the target.
- This method also provided additional magnetic field support by installing additional magnets in such a way that maximum ion current compression with respect to the substrate takes place.
- the process pressure is in the range of 4-10-3 mbar, an Ar / N 2 mixture also being used here.
- the N 2 contents are 80% (flow).
- Substrate holder with DC voltage bias A variant of the cBN process is to operate the DC magnetron system with DC voltage on the substrate side, in this case the substrate holder is made of stainless steel or other suitable metals. The other settings remain the same compared to the RF bias example described above. A DC bias voltage of 500 V is only applied to the substrate holder. It was found that coating thicknesses of up to 6 ⁇ m can be produced from highly insulating cBN layers in this way. As a variant of this exemplary embodiment, a 100 nm to 1,000 nm thick intermediate layer composed of a conductive Ti B (N) and / or B 4 C layer is applied to the substrate holder and the substrates mounted thereon before the coating.
- N conductive Ti B
- a comparable conductive layer can also be applied in between for the production of even thicker cBN layers in a very limited thickness.
- External heating of the samples can also be dispensed with in the case of the DC magnetron example.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/700,430 US5723188A (en) | 1994-03-04 | 1995-03-03 | Process for producing layers of cubic boron nitride |
JP52263695A JP3452578B2 (en) | 1994-03-04 | 1995-03-03 | Method for forming a wear-resistant layer composed of cubic boron nitride and use thereof |
EP95911214A EP0748395B1 (en) | 1994-03-04 | 1995-03-03 | Process for producing layers of cubic boron nitride |
DE59500649T DE59500649D1 (en) | 1994-03-04 | 1995-03-03 | METHOD FOR PRODUCING LAYERS FROM CUBIC BORNITRIDE |
KR1019960704864A KR100343654B1 (en) | 1994-03-04 | 1995-03-03 | Cubic Boron Nitride Film Manufacturing Method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4407274A DE4407274C1 (en) | 1994-03-04 | 1994-03-04 | Process for the production of wear-resistant coatings of cubic boron nitride, and their use |
DEP4407274.0 | 1994-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995023879A1 true WO1995023879A1 (en) | 1995-09-08 |
Family
ID=6511889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1995/000315 WO1995023879A1 (en) | 1994-03-04 | 1995-03-03 | Process for producing layers of cubic boron nitride |
Country Status (8)
Country | Link |
---|---|
US (1) | US5723188A (en) |
EP (1) | EP0748395B1 (en) |
JP (1) | JP3452578B2 (en) |
KR (1) | KR100343654B1 (en) |
CN (1) | CN1072276C (en) |
AT (1) | ATE158028T1 (en) |
DE (2) | DE4407274C1 (en) |
WO (1) | WO1995023879A1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5928771A (en) * | 1995-05-12 | 1999-07-27 | Diamond Black Technologies, Inc. | Disordered coating with cubic boron nitride dispersed therein |
DE19535560C1 (en) * | 1995-09-12 | 1996-10-31 | Fraunhofer Ges Forschung | Monitoring ion-assisted boron nitride deposition process |
US5948541A (en) * | 1996-04-04 | 1999-09-07 | Kennametal Inc. | Boron and nitrogen containing coating and method for making |
US5976716A (en) * | 1996-04-04 | 1999-11-02 | Kennametal Inc. | Substrate with a superhard coating containing boron and nitrogen and method of making the same |
US5885666A (en) * | 1997-05-06 | 1999-03-23 | General Motors Corporation | Conversion of hexagonal-like BN to cubic-like BN by ion implantation |
US6352626B1 (en) | 1999-04-19 | 2002-03-05 | Von Zweck Heimart | Sputter ion source for boron and other targets |
US6593015B1 (en) * | 1999-11-18 | 2003-07-15 | Kennametal Pc Inc. | Tool with a hard coating containing an aluminum-nitrogen compound and a boron-nitrogen compound and method of making the same |
CH696179A5 (en) * | 2000-06-08 | 2007-01-31 | Satis Vacuum Ind Vertriebs Ag | Plasma evaporation source for a vacuum coating arrangement for applying coating layers on optical substrates. |
JP4677123B2 (en) * | 2001-05-31 | 2011-04-27 | 株式会社アルバック | Apparatus and method for forming dense hard thin film using high-density helicon plasma |
US7954570B2 (en) | 2004-02-19 | 2011-06-07 | Baker Hughes Incorporated | Cutting elements configured for casing component drillout and earth boring drill bits including same |
DE102004028112B4 (en) | 2004-06-09 | 2019-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Tool substrate with a boron-containing layer system, consisting of a boron carbide, a B-C-N and a carbon-modified cubic boron nitride layer and method for producing such a layer system and use |
EP1609882A1 (en) * | 2004-06-24 | 2005-12-28 | METAPLAS IONON Oberflächenveredelungstechnik GmbH | Coating device and method by cathodic sputtering |
CN1721346B (en) * | 2004-07-16 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | Manufacturing method of core for molding glass |
DE102004042407A1 (en) * | 2004-09-02 | 2006-03-23 | Forschungszentrum Karlsruhe Gmbh | Layered composite with cubic boron nitride |
US20070173925A1 (en) * | 2006-01-25 | 2007-07-26 | Cornova, Inc. | Flexible expandable stent |
US20080177371A1 (en) * | 2006-08-28 | 2008-07-24 | Cornova, Inc. | Implantable devices and methods of forming the same |
US7836978B2 (en) * | 2007-06-15 | 2010-11-23 | Baker Hughes Incorporated | Cutting elements for casing component drill out and subterranean drilling, earth boring drag bits and tools including same and methods of use |
US7954571B2 (en) * | 2007-10-02 | 2011-06-07 | Baker Hughes Incorporated | Cutting structures for casing component drillout and earth-boring drill bits including same |
JP5305683B2 (en) * | 2008-02-18 | 2013-10-02 | 株式会社神戸製鋼所 | Method for forming cubic boron nitride-containing coating |
CZ304905B6 (en) * | 2009-11-23 | 2015-01-14 | Shm, S.R.O. | Method of depositing PVD layers, using cylindrical rotating cathode and apparatus for making the same |
CN102127743A (en) * | 2011-02-15 | 2011-07-20 | 江苏大学 | Preparation method of Ta-C-N thin-film |
CZ201661A3 (en) * | 2016-02-05 | 2017-06-07 | Shm, S. R. O. | A method of application of boron-based abrasion-resistant layers and an abrasion-resistant layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4415420A (en) * | 1983-02-07 | 1983-11-15 | Applied Coatings International, Inc. | Cubic boron nitride preparation |
US4412899A (en) * | 1983-02-07 | 1983-11-01 | Applied Coatings International, Inc. | Cubic boron nitride preparation utilizing nitrogen gas |
US4683043A (en) * | 1986-01-21 | 1987-07-28 | Battelle Development Corporation | Cubic boron nitride preparation |
JPS63239103A (en) * | 1987-03-27 | 1988-10-05 | Ulvac Corp | Cubic boron nitride coated body and production thereof |
EP0439135B1 (en) * | 1990-01-23 | 1996-05-22 | Sumitomo Electric Industries, Ltd. | Method for producing boron nitride film |
-
1994
- 1994-03-04 DE DE4407274A patent/DE4407274C1/en not_active Expired - Fee Related
-
1995
- 1995-03-03 AT AT95911214T patent/ATE158028T1/en not_active IP Right Cessation
- 1995-03-03 JP JP52263695A patent/JP3452578B2/en not_active Expired - Fee Related
- 1995-03-03 EP EP95911214A patent/EP0748395B1/en not_active Expired - Lifetime
- 1995-03-03 US US08/700,430 patent/US5723188A/en not_active Expired - Lifetime
- 1995-03-03 WO PCT/DE1995/000315 patent/WO1995023879A1/en active IP Right Grant
- 1995-03-03 CN CN95192087A patent/CN1072276C/en not_active Expired - Fee Related
- 1995-03-03 DE DE59500649T patent/DE59500649D1/en not_active Expired - Lifetime
- 1995-03-03 KR KR1019960704864A patent/KR100343654B1/en not_active IP Right Cessation
Non-Patent Citations (2)
Title |
---|
MIENO M ET AL: "Preparation of cubic boron nitride films by RF sputtering", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS), JULY 1990, JAPAN, vol. 29, no. 7, ISSN 0021-4922, pages L1175 - L1177 * |
N. TANABE ET AL: "Influence of sputtering target material on the formation of cubic BN thin films by ion beam enhanced deposition", DIAMOND AND RELATED MATERIALS, vol. 2, CH, pages 512 - 516, XP000361193 * |
Also Published As
Publication number | Publication date |
---|---|
KR100343654B1 (en) | 2002-11-30 |
DE4407274C1 (en) | 1995-03-30 |
JPH09510500A (en) | 1997-10-21 |
CN1072276C (en) | 2001-10-03 |
CN1143983A (en) | 1997-02-26 |
EP0748395A1 (en) | 1996-12-18 |
EP0748395B1 (en) | 1997-09-10 |
KR970701803A (en) | 1997-04-12 |
JP3452578B2 (en) | 2003-09-29 |
DE59500649D1 (en) | 1997-10-16 |
ATE158028T1 (en) | 1997-09-15 |
US5723188A (en) | 1998-03-03 |
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