US9484236B2 - Joining method and joining system - Google Patents

Joining method and joining system Download PDF

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Publication number
US9484236B2
US9484236B2 US14/342,941 US201214342941A US9484236B2 US 9484236 B2 US9484236 B2 US 9484236B2 US 201214342941 A US201214342941 A US 201214342941A US 9484236 B2 US9484236 B2 US 9484236B2
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adhesive
wafer
target
support
joining
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US20140224763A1 (en
Inventor
Shinji Okada
Masatoshi Shiraishi
Masatoshi Deguchi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Definitions

  • the present disclosure generally relates to a method of joining a target substrate to be processed to a support substrate, a computer storage medium, and a joining system for performing the joining method.
  • wafers semiconductor wafers having large diameters
  • thinner wafers are in demand for process such as mounting or the like.
  • the wafer is joined to, for example, a wafer or a glass substrate, which is a support substrate.
  • Joining of such wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate, for example, using a joining apparatus.
  • the joining apparatus has, for example, a first holding member configured to hold the wafer, a second holding member configured to hold the support substrate, a heating mechanism configured to heat the adhesive arranged between the wafer and the support substrate, and a moving mechanism configured to move at least the first holding member or the second holding member in a vertical direction. Also, in the joining apparatus, after supplying the adhesive between the wafer and the support substrate and heating the adhesive, the wafer and the support substrate are pressed and thus joined together.
  • the adhesive protrudes from a gap between the wafer and the support substrate.
  • the protruding adhesive may adversely affect a transfer process or a processing process of the wafer and the support substrate.
  • the adhesive may be stuck to another wafer or support substrate.
  • the adhesive may be stuck to a processing device for performing predetermined processing on a wafer and a support substrate. In such cases, the wafer and the support substrate cannot be suitably joined.
  • an adhesive is prevented from protruding from a gap between a target substrate and a support substrate to appropriately join the target substrate and the support substrate.
  • a method of joining a target substrate and a support substrate including: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation to press and join the target substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.
  • the adhesive on the outer peripheral portion of the target substrate is removed in the adhesive removing operation.
  • the adhesive can be prevented from protruding from a gap between the target substrate and the support substrate. Accordingly, the adhesive is not stuck to a transfer device configured to transfer the target substrate, the support substrate and the stacked substrate or processing devices configured to perform predetermined processing on these substrates. Therefore, it is possible to appropriately join the target substrate and the support substrate.
  • the support substrate may be coated with the adhesive and the adhesive on the outer peripheral portion of the support substrate may be removed.
  • a computer readable storage medium having a program stored thereon, the program operating on a computer of a control unit configured to control a joining system to perform a method of joining a target substrate and a support substrate to be processed using the joining system, wherein the joining method includes: an adhesive coating operation to coat the target substrate or the support substrate with an adhesive; an adhesive removing operation to supply a solvent for removing the adhesive on an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, thereby removing adhesive on the outer peripheral portion; and a joining operation to press and join the target substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or press and join the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.
  • a joining system for joining a target substrate to be processed and a support substrate including: an adhesive supply unit configured to supply and coat the target substrate or the support substrate with an adhesive; a solvent supply unit configured to supply a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive by the adhesive supply unit, thereby removing the adhesive on the outer peripheral portion; and a joining device configured to press and join the target substrate, in which the adhesive on the outer peripheral portion is removed by the solvent supply unit, and the support substrate coated with no adhesive, or to press and join the support substrate, in which the adhesive on the outer peripheral portion is removed by the solvent supply unit, and the target substrate coated with no adhesive.
  • an adhesive is prevented from protruding from a gap between a target substrate, and a support substrate to thereby appropriately join the target substrate and the support substrate.
  • FIG. 1 is a plan view schematically showing a configuration of a joining system according to an embodiment.
  • FIG. 2 is a side view schematically showing an internal configuration of the joining system according to an embodiment.
  • FIG. 3 is a side view of a target wafer and a support wafer.
  • FIG. 4 is a transverse sectional view schematically showing a configuration of a joining device.
  • FIG. 5 is a plan view schematically showing a configuration of a delivery unit.
  • FIG. 6 is a plan view schematically showing a configuration of a delivery arm.
  • FIG. 7 is a side view schematically showing a configuration of a delivery arm.
  • FIG. 8 is a plan view schematically showing a configuration of a reversing unit.
  • FIG. 9 is a side view schematically showing the configuration of a reversing unit.
  • FIG. 10 is a side view schematically showing the configuration of a reversing unit.
  • FIG. 11 is a side view schematically showing a configuration of a holding arm and holding members.
  • FIG. 12 is an explanatory view illustrating a positional relationship between a delivery unit and a reversing unit.
  • FIG. 13 is a side view schematically showing a configuration of a transfer unit.
  • FIG. 14 is an explanatory view illustrating a transfer unit arranged in a joining device.
  • FIG. 15 is a plan view schematically showing a configuration of a first transfer arm.
  • FIG. 16 is a side view schematically showing a configuration of a first transfer arm.
  • FIG. 17 is a plan view schematically showing a configuration of a second transfer arm.
  • FIG. 18 is a side view schematically showing a configuration of a second transfer arm.
  • FIG. 19 is an explanatory view showing cutouts formed in a second holding unit.
  • FIG. 20 is a longitudinal sectional view schematically showing a configuration of a joining unit.
  • FIG. 21 is a longitudinal sectional view schematically showing a configuration of a joining unit.
  • FIG. 22 is a longitudinal sectional view schematically showing a configuration of a coating device.
  • FIG. 23 is a transverse sectional view schematically showing a configuration of a coating device.
  • FIG. 24 is a longitudinal sectional view schematically showing a configuration of a heat processing device.
  • FIG. 25 is a transverse sectional view schematically showing a configuration of a heat processing device.
  • FIG. 26 is a flowchart showing main operations of the joining process.
  • FIG. 27 is an explanatory view illustrating a state where an adhesive on an outer peripheral portion of a target wafer has been removed.
  • FIG. 28 is an explanatory view illustrating a state where an adhesive on an outer peripheral portion of a target wafer has been removed.
  • FIG. 29 is an explanatory view illustrating a state where a first holding unit is lifted.
  • FIG. 30 is an explanatory view illustrating a state where a central portion of a second holding unit is bent.
  • FIG. 31 is an explanatory view illustrating a state where an entire joint surface of a support wafer makes contact with an entire joint surface of a target wafer.
  • FIG. 32 is an explanatory view illustrating a state where a target wafer and the support wafer are joined.
  • FIG. 33 is an explanatory view illustrating a state where an outside adhesive protrudes from an outer lateral side of a stacked wafer.
  • FIG. 34 is a side view schematically showing an internal configuration of a joining system according to another embodiment.
  • FIG. 35 is a longitudinal sectional view schematically showing a configuration of a coating device according to another embodiment.
  • FIG. 36 is a longitudinal sectional view schematically showing a configuration of another adhesive removal device.
  • FIG. 37 is a transverse sectional view schematically showing a configuration of the other adhesive removal device.
  • FIG. 38 is a longitudinal sectional view schematically showing a configuration of another solvent supply unit.
  • FIG. 1 is a plan view schematically showing a configuration of a joining system 1 according to an embodiment.
  • FIG. 2 is a side view schematically showing an internal configuration of the joining system 1 .
  • the joining system 1 is configured to, for example, interpose an adhesive to join a target wafer W, which is a substrate to be processed, and a support wafer S, which is a support substrate.
  • a surface of the target wafer W, which is joined to the support wafer S by interposing the adhesive G will be referred to as a “joint surface W J ” as a front surface
  • a surface of the target wafer W, which is opposite to the joint surface W J will be referred to as a “non-joint surface W N ” as a rear surface.
  • a surface of the support wafer S to be joined to the target wafer W by interposing the adhesive G will be referred to as a “joint surface S J ” as a front surface
  • a surface of the support wafer S, which is opposite to the joint surface S J will be referred to as a “non-joint surface S N ” as a rear surface.
  • the target wafer W and the support wafer S are joined to thereby form a stacked substrate T.
  • the target wafer W is a wafer that will be the final product.
  • a plurality of electronic circuits is formed on, for example, the joint surface W J , and the non-joint surface W N is subjected to a polishing process.
  • the support wafer S has an identical diameter to that of the target wafer W and supports the target wafer. While it has been described in this embodiment that the wafer is used as the support substrate, another substrate such as a glass substrate or the like may be used as the support substrate.
  • the joining system 1 includes a carry-in/carry-out station 2 in which cassettes C W , C S and C T capable of accommodating a plurality of target wafers W, a plurality of support wafers S and a plurality of stacked wafers T, respectively, are carried in and out, for example, between the carry-in/carry-out station 2 and the outside, and a processing station 3 including various processing units configured to perform predetermined processes on the target wafer W, the support wafer S and the stacked wafer T. These stations 2 and 3 are connected integrally.
  • a cassette mounting table 10 is installed in the carry-in/carry-out station 2 .
  • a plurality of, for example, four, cassette mounting plates 11 are installed on the cassette mounting table 10 .
  • the cassette mounting plates 11 are arranged in a line along an X direction (vertical direction in FIG. 1 ).
  • the cassettes C W , C S and C T are mounted on the cassette mounting plates 11 when carried in and out between the carry-in/carry-out station 2 and the outside of the joining system 1 .
  • the carry-in/carry-out station 2 is configured to be able to hold the plurality of target wafers, the plurality of support wafers S, and the plurality of stacked wafers T.
  • the number of the cassette mounting plates 11 is not limited to that of this embodiment but may be arbitrarily determined.
  • one of the cassettes may be used for collecting problematic wafers. That is, this cassette is to separate a stacked wafer, in which a problem occurs in joining of the target wafer W and the support wafer S because of various factors, from the other normal stacked wafers T.
  • one of the cassettes C T is used for collecting problematic wafers and the other cassettes C T are used for accommodating normal stacked wafers T therein.
  • a wafer transfer unit 20 is installed in the vicinity of the cassette mounting table 10 in the carry-in/carry-out station 2 .
  • the wafer transfer unit 20 is provided with a wafer transfer device 22 , which is movable on a transfer path 21 extending in an X direction.
  • the wafer transfer device 22 is movable about the vertical axis (in a ⁇ direction) and in a vertical direction, and can transfer the target wafer W, the support wafer S or the stacked wafer T between the cassettes C W , C S and C T on the cassette mounting plates 11 and transition devices 50 and 51 of a third processing block G 3 of the processing station 3 , which will be described later.
  • the processing station 3 is provided with a plurality of, for example, three, processing blocks G 1 , G 2 and G 3 having various processing devices.
  • the first processing block G 1 is installed at a front side of the processing station 3 (at a negative direction side of the X direction in FIG. 1 )
  • the second processing block G 2 is installed at the back side of the processing station 3 (at a positive direction side of the X direction in FIG. 1 ).
  • the third processing block G 3 is installed at a side of the carry-in/carry-out station 2 (at a negative direction side of the Y direction in FIG. 1 ) in the processing station 3 .
  • joining devices 30 to 33 which are configured to press the target wafer W and the support wafer S with the adhesive G interposed therebetween for joining thereof, are disposed in an order in the Y direction from the side of the carry-in/carry-out station 2 in the first processing block G 1 .
  • a coating device 40 configured to coat the target wafer W with the adhesive G and further to remove the adhesive G on the outer peripheral portion of the target wafer W, heat processing devices 41 to 43 configured to heat the target wafer W with the adhesive G coated thereon at a predetermined temperature, and heat processing devices 44 to 46 similar thereto are disposed in an order in the direction toward the carry-in/carry-out station 2 (in a negative direction of the Y direction in FIG. 2 ) in the second processing block G 2 .
  • the heat processing devices 41 to 43 or the heat processing devices 44 to 46 are installed in a three-stage manner in order from the bottom.
  • the number of the heat processing devices 41 to 46 or the arrangement thereof in a vertical direction and a horizontal direction may be arbitrarily set.
  • the transition devices 50 and 51 for transition of the target wafer W, the support wafer S and the stacked wafer T are installed in a two-stage manner in order from the bottom in the third processing block G 3 .
  • a wafer transfer region 60 is defined in a region surrounded by the first processing block G 1 to the third processing block G 3 .
  • a wafer transfer device 61 is arranged in, for example, the wafer transfer region 60 .
  • a pressure in the wafer transfer region 60 is equal to or greater than atmospheric pressure, and so-called atmosphere transfer of the target wafer W, the support wafer S or the stacked wafer T is performed in the wafer transfer region 60 .
  • the wafer transfer device 61 is provided with a transfer arm, which is movable, for example, in a vertical direction and a horizontal direction (Y and X directions) and around the vertical axis.
  • the wafer transfer device 61 may move inside the wafer transfer region 60 to transfer the target wafer W, the support wafer S and the stacked wafer T to predetermined devices in the first processing block G 1 , the second processing block G 2 and the third processing block G 3 positioned in the vicinity thereof.
  • the joining device 30 has a pressing vessel 100 capable of sealing an inside thereof.
  • An inlet/outlet 101 for transfer of the target wafer W, the support wafer S and the stacked wafer T is formed in a lateral side of the processing vessel 100 facing the wafer transfer region 60 , and an opening/closing shutter (not shown) is installed at the inlet/outlet.
  • the interior of the processing vessel 100 is partitioned into a preprocessing region D 1 and a joining region D 2 by an inner wall 102 .
  • the above-described inlet/outlet 101 is formed in the lateral side of the processing vessel 100 in the preprocessing region D 1 .
  • an inlet/outlet 103 for transfer of the target wafer W, the support wafer S and the stacked wafer T is formed in the inner wall 102 .
  • the preprocessing region D 1 is provided with delivery units 110 configured to deliver the target wafer W, the support wafer S and the stacked wafer T between the preprocessing region D 1 and the outside of the joining device 30 .
  • the delivery units 110 are arranged adjacent to the inlet/outlet 101 .
  • the delivery units 110 are arranged in a multi-stage manner, for example, a two-stage manner, in a vertical direction, and thus can simultaneously deliver any two of the target wafer W, the support wafer S and the stacked wafer T.
  • one of the delivery units 110 may deliver the target wafer W or the support wafer S before being joined, and the other delivery unit 110 may deliver the stacked wafer T after joining.
  • one of the delivery units 110 may deliver the target wafer W before being joined, and the other delivery unit 110 may deliver support wafer S before being joined.
  • a reversing unit 111 configured to reverse the front and rear surfaces of, e.g., the support wafer S, is installed vertically above the delivery units 110 at a negative direction side of the Y direction, i.e., toward the inlet/outlet 103 , in the preprocessing region D 1 .
  • the reversing unit 111 may adjust an orientation of a horizontal direction of the support wafer S and also adjust an orientation of a horizontal direction of the target wafer W.
  • a transfer unit 112 which is configured to transfer the target wafer W, the support wafer S or the stacked wafer T between the delivery units 110 , the reversing unit 111 and a later-described joining unit 113 , is installed at a positive direction side of the Y direction in the joining region D 2 .
  • the transfer unit 112 is installed at the inlet/outlet 103 .
  • the joining unit 113 which is configured to interpose the adhesive G and press the target wafer W and the support wafer S for joining, is installed at a negative direction side of the Y direction in the joining region D 2 .
  • the delivery unit 110 has a delivery arm 120 and wafer support pins 121 , as shown in FIG. 5 .
  • the delivery arm 120 may deliver the target wafer W, the support wafer S or the stacked wafer T between the outside of the joining device 30 , i.e., the wafer transfer device 61 , and the wafer support pins 121 .
  • the wafer support pins 121 are installed at a plurality of, for example, three, places and may support the target wafer W, the support wafer S or the stacked wafer T.
  • the delivery arm 120 includes an arm portion 130 configured to hold the target wafer W, the support wafer S or the stacked wafer T, and an arm drive part 131 having, for example, a motor or the like.
  • the arm portion 130 has a substantially circular plate shape.
  • the arm drive part 131 may move the arm portion 130 in an X direction (vertical direction in FIG. 5 ).
  • the arm drive part 131 is installed on a rail 132 extending in a Y direction (left and right directions in FIG. 5 ) and configured to be movable on the rail 132 .
  • the delivery arm 120 is movable in a horizontal direction (X and Y directions) and may deliver the target wafer W, the support wafer S or the stacked wafer T smoothly between the wafer transfer device 61 and the wafer support pins 121 .
  • Wafer support pins 140 which are configured to support the target wafer W, the support wafer S or the stacked wafer T, are installed at a plurality of, for example, four, places on the arm portion 130 , as shown in FIGS. 6 and 7 .
  • guides 141 which are configured to perform positioning of the target wafer W, the support wafer S or the stacked wafer T supported by the wafer support pins 140 , are installed on the arm portion 130 .
  • the guides 141 are installed at a plurality of, for example, four, places in order to guide a lateral side of the target wafer W, the support wafer S or the stacked wafer T.
  • Cutouts 142 are formed at, for example, four places in the outer periphery of the arm portion 130 , as shown in FIGS. 5 and 6 .
  • the cutouts 142 may prevent the transfer arm of the wafer transfer device 61 from interfering with the arm portion 130 when the target wafer W, the support wafer S or the stacked wafer T is delivered from the transfer arm of the wafer transfer device 61 to the delivery arm 120 .
  • the arm portion 130 is formed with two slits 143 along the X direction. Each of the slits 143 is formed from the end of the arm portion 130 , which faces the wafer support pins 121 , to the vicinity of the central portion of the arm portion 130 . The slits 143 may prevent the arm portion 130 from interfering with the wafer support pins 121 .
  • the reversing unit 111 has a holding arm 150 configured to hold the support wafer S or the target wafer W.
  • the holding arm 150 extends in a horizontal direction (X direction in FIGS. 8 and 9 ).
  • holding members 151 which are configured to hold the support wafer S or the target wafer W, are installed at, for example, four places in the holding arm 150 .
  • the holding members 151 are configured to be movable in a horizontal direction with respect to the holding arm 150 , as shown in FIG. 11 .
  • lateral sides of the holding members 151 are respectively formed with cutouts 152 configured to hold an outer peripheral portion of the support wafer S or the target wafer W. Also, the holding members 151 may allow the support wafer S or the target wafer W to be inserted therebetween, thereby holding the support wafer S or the target wafer W.
  • the holding arm 150 is supported by a first drive unit 153 having, for example, a motor or the like.
  • the first drive unit 153 allows the holding arm 150 to be rotatable about a horizontal axis and also to be movable in a horizontal direction (X direction in FIGS. 8 and 9 and Y direction in FIGS. 8 and 10 ).
  • the first drive unit 153 may rotate the holding arm 150 about a vertical axis, thereby moving the holding arm 150 in a horizontal direction.
  • a second drive unit 154 having, for example, a motor or the like, is installed below the first drive unit 153 .
  • the second drive unit 154 enables the first drive unit 153 to move in a vertical direction along a support post 155 extending in the vertical direction. In this way, with the first drive unit 153 and the second drive unit 154 , the support wafer S or the target wafer W held by the holding members 151 can be rotated about the horizontal axis and moved in vertical and horizontal directions.
  • a position adjustment mechanism 160 which is configured to adjust an orientation of the horizontal direction of the support wafer S or the target wafer W held by the holding members 151 , is supported by the support post 155 via a support plate 161 .
  • the position adjustment mechanism 160 is installed adjacent to the holding arm 150 .
  • the position adjustment mechanism 160 has a base 162 and a detection unit 163 configured to detect a position of a notch portion of the support wafer S or the target wafer W. In addition, while moving the support wafer S or the target wafer W held by the holding members 151 in the horizontal direction, the position adjustment mechanism 160 detects the position of the notch portion of the support wafer S or the target wafer W by the detection unit 163 , so that the position adjustment mechanism 160 may control the position of the notch portion to thereby control the orientation of the horizontal direction of the support wafer S or the target wafer W.
  • the delivery units 110 as configured above are arranged in a two-stage manner in a vertical direction, and the reversing unit 111 is disposed vertically above the delivery units 110 . That is, the delivery arm 120 of the delivery unit 110 moves in a horizontal direction below the holding arm 150 of the reversing unit 111 and the position adjustment mechanism 160 .
  • the wafer support pins 121 of the delivery unit 110 are arranged below the holding arm 150 of the reversing unit 111 .
  • the transfer unit 112 has a plurality of, for example, two, transfer arms 170 and 171 .
  • the first transfer arm 170 and the second transfer arm 171 are arranged in a two-stage manner in order from the bottom in a vertical direction.
  • the first transfer arm 170 and the second transfer arm 171 have different shapes from each other as described later.
  • An arm drive part 172 having, for example, a motor or the like, is installed at base end portions of the transfer arms 170 and 171 .
  • the respective transfer arms 170 and 171 may be independently moved in a horizontal direction by the arm drive part 172 .
  • These transfer arms 170 and 171 and the arm drive part 172 are supported by a base 173 .
  • the transfer unit 112 is installed at the inlet/outlet 103 formed in the inner wall 102 of the processing vessel 100 .
  • the transfer unit 112 is movable along the inlet/outlet 103 in a vertical direction by a drive unit (not shown) having, for example, a motor or the like.
  • the first transfer arm 170 holds the rear surface of the target wafer W, the support wafer S or the stacked wafer T (i.e., the non-joint surface W N or S N of the target wafer W or the support wafer S) for transfer.
  • the first transfer arm 170 includes an arm portion 180 , in which a distal end branches into two tip portions 180 a , and a support portion 181 , which is formed integrally with the arm portion 180 and supports the arm portion 180 .
  • O-rings 182 made of resin are installed at a plurality of, for example, four, places on the arm portion 180 .
  • the O-rings 182 make contact with the rear surface of the target wafer W, the support wafer S or the stacked wafer T, and the O-rings 182 hold the rear surface of the target wafer W, the support wafer S or the stacked wafer T by the friction force between the O-rings 182 and the rear surface of the target wafer W, the support wafer S or the stacked wafer T.
  • the first transfer arm 170 may horizontally hold the target wafer W, the support wafer S or the stacked wafer T on the O-rings 182 .
  • guide members 183 and 184 are installed on the arm portion 180 outside of the target wafer W, the support wafer S or the stacked wafer T held by the O-rings 182 .
  • the first guide members 183 are installed at a distal end of the tip portion 180 a of the arm portion 180 .
  • the second guide member 184 is formed in an arc shape along an outer circumference of the target wafer W, the support wafer S or the stacked wafer T and is installed at the side of the support portion 181 .
  • the guide members 183 and 184 may prevent the target wafer W, the support wafer S or the stacked wafer T from protruding or slipping and dropping from the first transfer arm 170 .
  • the target wafer W, the support wafer S or the stacked wafer T is held at an appropriate position on the O-rings 182 , the target wafer W, the support wafer S or the stacked wafer T does not make contact with the guide members 183 and 184 .
  • the second transfer arm 171 holds, for example, the outer peripheral portion of the front surface, i.e., the joint surface S J , of the support wafer S for transfer. That is, the second transfer arm 171 holds the outer peripheral portion of the joint surface S J of the support wafer S, of which the front and rear surfaces are reversed in the reversing unit 111 , and transfers the support wafer S.
  • the second transfer arm 171 includes an arm portion 190 , of which a distal end branches into two tip portions 190 a , and a support portion 191 , which is formed integrally with the arm portion 190 and supports the arm portion 190 .
  • second holding members 192 are installed at a plurality of, for example, four, places on the arm portion 190 .
  • the second holding members 192 include mounting portions 193 , on which the outer peripheral portion of the joint surface S J of the support wafer S is mounted, and taper portions 194 , which extend upward from the mounting portions 193 and have an inner surface expanding upwardly from the bottom in a taper shape.
  • the mounting portions 193 hold the outer peripheral portion of, for example, 1 mm or less from a rim of the support wafer S.
  • the inner surface of the taper portions 194 expands upwardly from the bottom in a taper shape, for example, even though the support wafer S delivered to the second holding members 192 is dislocated from a predetermined position in the horizontal direction, the support wafer S is smoothly guided to the taper portions 194 and then positioned to be held on the mounting portions 193 .
  • the second transfer arm 171 may horizontally hold the support wafer S on the second holding members 192 .
  • cutouts 201 a are formed at, for example, four places in a second holding unit 201 of the joining unit 113 described later.
  • the cutouts 201 a may prevent the second holding members 192 of the second transfer arm 171 from interfering with the second holding unit 201 .
  • the joining unit 113 includes a first holding unit 200 configured to mount and hold the target wafer W at an upper surface thereof, and the second holding unit 201 configured to attract and hold the support wafer S at a lower surface thereof.
  • the first holding unit 200 is installed below the second holding unit 201 and arranged to face the second holding unit 201 . That is, the target wafer W held by the first holding unit 200 and the support wafer S held by the second holding unit 201 are arranged to face each other.
  • a suction pipe 210 which is configured to attract and hold the target wafer W, is installed inside the first holding unit 200 .
  • the suction pipe 210 is connected to a negative pressure generator (not shown), for example, a vacuum pump.
  • the first holding unit 200 is made of a material having sufficient strength, which is not deformed even if a load is applied by a pressing mechanism 260 to be described later, for example, ceramics such as silicon carbide ceramic or aluminum nitride ceramic.
  • a heating mechanism 211 configured to heat the target wafer W is installed inside the first holding unit 200 .
  • a heater may be used in the heating mechanism 124 .
  • a moving mechanism 220 which is configured to move the first holding unit 200 and the target wafer W in a vertical direction and a horizontal direction, is installed below the first holding unit 200 .
  • the moving mechanism 220 can tridimensionally move the first holding unit 200 , for example, with a precision of ⁇ 1 ⁇ m.
  • the moving mechanism 220 includes a vertical moving part 221 configured to move the first holding unit 200 in a vertical direction, and a horizontal moving part 222 configured to move the first holding unit 200 in a horizontal direction.
  • Each of the vertical moving part 221 and the horizontal moving part 222 has, for example, a ball screw (not shown) and a motor (not shown) configured to rotate the ball screw.
  • Support members 223 configured to be extendable in a vertical direction is installed on the horizontal moving part 222 .
  • the support members 223 are installed at, for example, three places, outside the first holding unit 200 .
  • the support members 223 may support a protrusion 230 , which is formed to protrude downward from an outer peripheral lower surface of the second holding unit 201 .
  • the position of the target wafer W on the first holding unit 200 can be aligned in a horizontal direction and, as shown in FIG. 21 , the first holding unit 200 may be moved upward to define a joining space R for joining the target wafer W and the support wafer S.
  • the joining space R is a space surrounded by the first holding unit 200 , the second holding unit 201 and the protrusion 230 .
  • a vertical distance between the target wafer W and the support wafer S in the joining space R can be adjusted by adjusting a height of the support members 223 .
  • lift pins (not shown), which support and lift the target wafer W or the stacked wafer T from the bottom, are installed below the first holding unit 200 .
  • the lift pins pass through through-holes (not shown) formed in the first holding unit 200 to project from the upper surface of the first holding unit 200 .
  • the second holding unit 201 is made of, for example, aluminum having elasticity.
  • the above-described protrusion 230 is formed on the outer peripheral lower surface of the second holding unit 201 to protrude downward from the outer peripheral lower surface.
  • the protrusion 230 is formed along the outer periphery of the second holding unit 201 .
  • the protrusion 230 may be formed integrally with the second holding unit 201 .
  • a seal member 231 configured to maintain the airtightness of the joining space R is installed on the lower surface of the protrusion 230 .
  • the seal member 231 has an annular shape and is positioned in a groove formed in the lower surface of the protrusion 230 and includes, for example, an O-ring.
  • the seal member 231 has elasticity.
  • any component having a sealing function may be used as the seal member 231 , and the seal member 231 may be not limited to this embodiment.
  • a suction pipe 240 configured to attract and hold the support wafer S is installed inside the second holding unit 201 .
  • the suction pipe 240 is connected to a negative pressure generator (not shown), for example, a vacuum pump.
  • an intake pipe 241 which is configured for intake of an atmosphere of the joining space R, is installed inside the second holding unit 201 .
  • One end of the intake pipe 241 is opened at a location in which the support wafer S is not held in the lower surface of the second holding unit 201 .
  • the other end of the intake pipe 241 is connected to a negative pressure generator (not shown), for example, a vacuum pump or the like.
  • a heating mechanism 242 configured to heat the support wafer S is installed inside the second holding unit 201 .
  • a heater for example, may be used as the heating mechanism 242 .
  • Support members 250 which are configured to support the second holding unit 201 , and the pressing mechanism 260 , which is configured to downwardly press the second holding unit 201 in a vertical direction, are installed on the upper surface of the second holding unit 201 .
  • the pressing mechanism 260 includes a pressure vessel 261 installed to cover the target wafer W and the support wafer S, and a fluid supply pipe 262 configured to supply fluid, for example, compressed air, into the pressure vessel 261 .
  • the support members 250 are configured to be extendable in a vertical direction and installed at, for example, three places, outside the pressure vessel 261 .
  • the pressure vessel 261 includes bellows made of, for example, stainless steel, which is extendable in, for example, a vertical direction.
  • the pressure vessel 261 has a lower surface in contact with the upper surface of the second holding unit 201 and an upper surface in contact with a lower surface of a support plate 263 installed above the second holding unit 201 .
  • the fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to a fluid supply source (not shown). In addition, the pressure vessel 261 is supplied with the fluid from the fluid supply pipe 262 .
  • the pressure vessel 261 may extend only downward, thereby pressing the second holding unit 201 installed on the lower surface of the pressure vessel 261 downward.
  • the pressure vessel 261 may press the second holding unit 201 with in-plane uniformity.
  • the load in pressing the second holding unit 201 is adjusted by controlling the pressure of compressed air, which is supplied to the pressure vessel 261 .
  • the support plate 263 can be made of a member having sufficient strength not to be deformed even when it receives reaction force of the load applied to the second holding unit 201 by the pressing mechanism 260 .
  • it may be configured such that the upper surface of the pressure vessel 261 may make contact with a ceiling surface of the processing vessel 100 .
  • the joining devices 31 to 33 have the same configuration as the above-described joining device 30 , and thus, a description thereof will be omitted.
  • the coating device 40 includes an internally sealable processing vessel 270 .
  • An inlet/outlet (not shown), through which the target wafer W is passed, is formed at a lateral side of the processing vessel 270 facing the wafer transfer region 60 , and an opening/closing shutter (not shown) is installed in the inlet/outlet.
  • a spin chuck 280 is installed in the central portion of the processing vessel 270 as a rotary holding unit configured to hold and rotate the target wafer W.
  • the spin chuck 280 has a horizontal upper surface, and a suction port (not shown) configured to suck, for example, the target wafer W, is installed on the upper surface. The suction through the suction port allows the target wafer W to be attracted and held on the spin chuck 280 .
  • a chuck drive unit 281 which is provided with, for example, a motor, is installed below the spin chuck 280 .
  • the spin chuck 280 can be rotated at a predetermined speed by the chuck drive unit 281 .
  • the chuck drive unit 281 is equipped with a lifting drive source such as a cylinder, and can lift the spin chuck 280 .
  • a cup 282 is provided around the spin chuck 280 to receive and collect liquid dropped or scattered from the target wafer W.
  • a discharge pipe 283 for draining the collected liquid and an exhaust pipe 284 for exhausting an atmosphere in the cup 282 are connected to the bottom surface of the cup 282 .
  • a rail 290 extending in a Y direction is formed at the back of the cup 282 in a negative direction of an X direction (at a lower side in FIG. 23 ).
  • the rail 290 is formed at, for example, from an outer side of the cup 282 in a negative direction of the Y direction (left side in FIG. 23 ) to an outer side of the cup 282 in a positive direction of the Y direction (right side in FIG. 23 ).
  • An arm 291 is mounted on the rail 290 .
  • an adhesive nozzle 292 which is an adhesive supply unit configured to supply the adhesive G in a liquid state to the target wafer W, is supported by the arm 291 .
  • the arm 291 is movable on the rail 290 by a nozzle drive unit 293 .
  • the adhesive nozzle 292 can move from a standby section 294 installed at an outer side of the cup 282 in a positive direction of the Y direction to an upper side of the central portion of the target wafer W positioned within the cup 282 , and also can move in a radial direction of the target wafer W.
  • the arm 291 may be liftable by the nozzle drive unit 293 to adjust the height of the adhesive nozzle 292 .
  • a supply pipe 295 configured to supply the adhesive G to the adhesive nozzle 292 is connected to the adhesive nozzle 292 .
  • the supply pipe 295 is in communication with an adhesive supply source 296 configured to store the adhesive G therein.
  • a supply kit 297 including a valve, a flow controller or the like configured to control the flow of the adhesive G is installed at the supply pipe 295 .
  • a rail 300 is formed to extend in the Y direction (left and right directions in FIG. 23 ) between the cup 282 and the rail 290 .
  • the rail 300 is formed at, for example, from an outer side of the cup 282 in a negative direction of the Y direction (left direction in FIG. 23 ) to a vicinity of the center of the cup 282 .
  • the rail 300 is provided with an arm 301 .
  • a solvent nozzle 302 as a solvent supply unit configured to supply a solvent for removing the adhesive G to the target wafer W, is supported by the arm 301 .
  • the arm 301 is movable on the rail 300 by a nozzle drive unit 303 shown in FIG. 23 .
  • the solvent nozzle 302 can move from a standby section 304 installed at an outer side of the cup 282 in a negative direction of the Y direction to an upper side of the outer peripheral portion of the target wafer W in the cup 282 , and also can move above the target wafer W in radial direction of the target wafer W.
  • the arm 301 may be lifted by the nozzle drive unit 303 to adjust the height of the solvent nozzle 302 .
  • a supply pipe 305 configured to supply a solvent for removing the adhesive G to the solvent nozzle 302 is connected to the solvent nozzle 302 .
  • the supply pipe 305 is in communication with a solvent supply source 306 configured to store the solvent for removing the adhesive G therein.
  • a supply kit 307 including a valve, a flow controller or the like configured to control the flow of the solvent for removing the adhesive G is installed at the supply pipe 305 .
  • the solvent for removing the adhesive G includes, for example, an organic thinner, and trimethylbenzen (mesitylene) is used in the embodiment.
  • a back rinse nozzle (not shown) configured to spray a cleaning liquid toward the rear surface, i.e., the non-joint surface W N , of the target wafer W may be installed below the spin chuck 280 .
  • the non-joint surface W N and the outer peripheral portion of the target wafer W are cleaned with the cleaning liquid sprayed by the back rinse nozzle.
  • the heat processing device 41 has an internally sealable processing vessel 310 .
  • An inlet/outlet (not shown), through which the target wafer W is passed, is formed at a lateral side of the processing vessel 310 facing the wafer transfer region 60 , and an opening/closing shutter (not shown) is installed at the inlet/outlet.
  • a gas supply port 311 configured to supply the inside of the processing vessel 310 with, for example, an inert gas such as nitrogen gas is formed in the ceiling surface of the processing vessel 310 .
  • a gas supply pipe 313 in communication with a gas supply source 312 is connected to the gas supply port 311 .
  • a supply kit 314 including a valve, a flow controller or the like configured to control the flow of the inert gas is installed at the gas supply pipe 313 .
  • An intake port 315 configured for intake of an atmosphere inside the processing vessel 310 is formed in a bottom surface of the processing vessel 310 .
  • An intake pipe 317 in communication with a negative pressure generator 316 such as a vacuum pump is connected to the intake port 315 .
  • a heating unit 320 configured to heat the target wafer W and a temperature adjustment unit 321 configured to adjust a temperature of the target wafer W are installed inside the processing vessel 310 .
  • the heating unit 320 and the temperature adjustment unit 321 are arranged and disposed in a Y direction.
  • the heating unit 320 is provided with an annular holding member 331 configured to receive a hot plate 330 and hold the outer peripheral portion of the hot plate 330 , and a support ring 332 having a substantially cylindrical shape surrounding the outer periphery of the holding member 331 .
  • the hot plate 330 is in the shape of a substantially circular disk having a thickness, and may allow the target wafer W to be mounted and heated thereon.
  • a heater 333 for example, is embedded in the hot plate 330 .
  • the heating temperature of the hot plate 330 is controlled by, for example, a control unit 370 , and the target wafer W mounted on the hot plate 330 is heated at a predetermined temperature.
  • three lift pins 340 which support and lift the target wafer W from the bottom, are installed below the hot plate 330 .
  • the lift pins 340 may be moved up and down by a lift drive unit 341 .
  • Through-holes 342 which pass through the hot plate 330 in a thicknesswise direction, are formed at, for example, three places, in the vicinity of the center of the hot plate 330 .
  • the lift pins 340 pass through the through-holes 342 and may protrude from the upper surface of the hot plate 330 .
  • the temperature adjustment unit 321 has a temperature adjustment plate 350 .
  • the temperature adjustment plate 350 has a shape of a substantially quadrangular plate and its end face toward a side of the hot plate 330 is curved in a shape of a circular arc, as shown in FIG. 25 .
  • the temperature adjustment plate 350 has two slits 351 formed along a Y direction.
  • the slits 351 are formed from the end face of the temperature adjustment plate 350 facing the hot plate 330 to the vicinity of the center of the temperature adjustment plate 350 .
  • the slits 351 may prevent the temperature adjustment plate 350 from interfering with the lift pins 340 of the heating unit 320 and later-described lift pins 360 of the temperature adjustment unit 321 .
  • a temperature adjustment member such as a Peltier element is embedded in the temperature adjustment plate 350 .
  • the cooling temperature of the temperature adjustment plate 350 is controlled, for example, by the control unit 370 , and the target wafer W mounted on the temperature adjustment plate 350 is cooled to a predetermined temperature.
  • the temperature adjustment plate 350 is supported by a support arm 352 .
  • the support arm 352 is provided with a drive unit 353 .
  • the drive unit 353 is installed on a rail 354 extending in a Y direction.
  • the rail 354 extends from the temperature adjustment unit 321 to the heating unit 320 .
  • the drive unit 353 allows the temperature adjustment plate 350 to be movable along the rail 354 between the heating unit 320 and the temperature adjustment unit 321 .
  • the lift pins 360 for example, three lift pins, which support and lift the target wafer W from the bottom, are installed below the temperature adjustment plate 350 .
  • the lift pins 360 can be moved up and down by a lift drive unit 361 .
  • the lift pins 360 pass through the slits 351 and may protrude from the upper surface of the temperature adjustment plate 350 .
  • the heat processing devices 42 to 46 have the same configuration as the above-described heat processing device 41 , and thus, descriptions thereof will be omitted.
  • the temperature of the stacked wafer T can also be adjusted in the heat processing devices 41 to 46 . Further, in order to adjust the temperature of the stacked wafer T, a temperature adjustment device (not shown) may be installed.
  • the temperature adjustment device has the same configuration as the above-described heat processing device 41 , and a temperature adjustment plate is used instead of the hot plate 330 . Since the temperature adjustment plate has a cooling member such as a Peltier element installed therein, the temperature adjustment plate can be adjusted to a setting temperature.
  • the above-described joining system 1 has a control unit 370 installed therein.
  • the control unit 370 is, for example, a computer, and includes a program storage unit (not shown).
  • the program storage unit stores a program which controls processing of the target wafer W, the support wafer S and the stacked wafer T in the joining system 1 .
  • the program storage unit also stores a program which controls operation of a driving system including the above-described processing devices and the transfer unit to implement a joining process in the joining system 1 , which will be described later.
  • the programs may also be installed in the control unit 370 from a computer readable storage medium H such as a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card or the like.
  • FIG. 26 is a flowchart showing main operations of the joining processing.
  • the cassette C W having a plurality of the target wafers W accommodated therein, the cassette C S having a plurality of the support wafers S accommodated therein and the cassette C T being empty are respectively mounted on predetermined cassette mounting plates 11 of the carry-in/carry-out station 2 .
  • the target wafer W in the cassette C W is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G 3 of the processing station 3 .
  • the target wafer W is transferred while its non-joint surface W N faces downward.
  • the target wafer W is transferred to the coating device 40 by the wafer transfer device 61 .
  • the target wafer W carried in the coating device 40 is delivered from the wafer transfer device 61 to the spin chuck 280 and then attracted and held thereby.
  • the non-joint surface W N of the target wafer W is attracted and held.
  • the adhesive nozzle 292 positioned within the standby section 294 is moved, by the arm 291 , above the central portion of the target wafer W.
  • the adhesive G is supplied from the adhesive nozzle 292 onto the joint surface W J of the target wafer W while rotating the target wafer W by the spin chuck 280 .
  • the supplied adhesive G is spread to the entire surface of the joint surface W J of the target wafer W due to a centrifugal force, and the joint surface W J of the target wafer W is coated with the adhesive G (Operation A 1 in FIG. 26 ).
  • the adhesive nozzle 292 is moved to the standby section 294 , and the arm 301 moves the solvent nozzle 302 positioned in the standby section 304 to the upper side of the outer peripheral portion of the target wafer W.
  • the solvent nozzle 302 is arranged at a predetermined distance L, for example, 5 mm to 7.5 mm, from an outer lateral side W S of the target wafer W.
  • the distance L is determined in the joining device 30 such that a position of an end of the outside adhesive protruding out from the outer lateral side of the stacked wafer T corresponds to a position of an end of the target wafer W after being thinned in the outside of the joining system 1 .
  • the solvent for removing the adhesive G is supplied from the solvent nozzle 302 to an outer peripheral portion W E of the target wafer W.
  • the supplied solvent for removing the adhesive G flows toward the outer lateral side W S over the outer peripheral portion W E of the target wafer W due to the centrifugal force.
  • the solvent for removing the adhesive G removes the adhesive G on the outer peripheral portion W E of the target wafer W (Operation A 2 in FIG. 26 ).
  • the target wafer W is transferred to the heat processing device 41 by the wafer transfer device 61 .
  • an inert gas atmosphere is maintained within the heat processing device 41 .
  • the stacked wafer T is delivered from the wafer transfer device 61 to the lift pins 360 , which have been lifted up in advance and are on standby. Subsequently, the lift pins 360 are moved down to mount the target wafer W on the temperature adjustment plate 350 .
  • the drive unit 353 moves the temperature adjustment plate 350 to an upper side of the hot plate 330 along the rail 354 , and the target wafer W is delivered to the lift pins 360 , which have been lifted up in advance and are on standby. Then, the lift pins 340 are moved down, and the target wafer W is mounted on the hot plate 330 .
  • the target wafer W on the hot plate 330 is then heated to a predetermined temperature, for example, 100 to 300 degrees C. (Operation A 3 in FIG. 26 ). As the heating is performed by the hot plate 330 , the adhesive G on the target wafer W is heated and then cured.
  • the lift pins 340 are lifted up, and the temperature adjustment plate 350 is moved to the upper side of the hot plate 330 .
  • the target wafer W is delivered from the lift pins 340 to the temperature adjustment plate 350 , and the temperature adjustment plate 350 is moved toward the wafer transfer region 60 .
  • the temperature of the target wafer W is adjusted to a predetermined temperature.
  • the target wafer W which is heat-processed in the heat processing device 41 , is transferred to the joining device 30 by the wafer transfer device 61 .
  • the target wafer W transferred to the joining device 30 is delivered from the wafer transfer device 61 to the delivery arm 120 of the delivery units 110 , and then, delivered from the delivery arm 120 to the wafer support pins 121 . Thereafter, the target wafer W is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112 .
  • the target wafer W transferred to the reversing unit 111 is held by the holding members 151 and moved to the position adjustment mechanism 160 . Then, a position of the notch portion of the target wafer W is adjusted in the position adjustment mechanism 160 , so that an orientation of the horizontal direction of the target wafer W is adjusted (Operation A 4 in FIG. 26 ).
  • the target wafer W is transferred from the reversing unit 111 to the joining unit 113 by the first transfer arm 170 of the transfer unit 112 .
  • the target wafer W transferred to the joining unit 113 is mounted to the first holding unit 200 (Operation A 5 in FIG. 26 ).
  • the target wafer W, of which the joint surface W J faces upward, i.e., the adhesive G faces upward, is mounted on the first holding unit 200 .
  • the support wafer S is processed in succession to the target wafer W.
  • the support wafer S is transferred to the joining device 30 by the wafer transfer device 61 .
  • the process of transferring the support wafer S to the joining device 30 is performed in the same way as the above embodiment, and thus, a description thereof will be omitted.
  • the support wafer S transferred to the joining device 30 is delivered from the wafer transfer device 61 to the delivery arm 120 of the delivery units 110 , and then, also delivered from the delivery arm 120 to the wafer support pins 121 . Thereafter, the support wafer S is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112 .
  • the support wafer S transferred to the reversing unit 111 is held by the holding members 151 and is moved to the position adjustment mechanism 160 . Then, a position of the notch portion of the support wafer S is adjusted in the position adjustment mechanism 160 , so that an orientation of the horizontal direction of the support wafer S is adjusted (Operation A 6 in FIG. 26 ).
  • the support wafer S with an orientation in the horizontal direction is moved from the position adjustment mechanism 160 in the horizontal direction and also moved upward in the vertical direction, and then, the front and rear surfaces of the support wafer S are reversed (Operation A 7 in FIG. 26 ). That is, the joint surface S J of the support wafer S faces downward.
  • the support wafer S is moved downward in the vertical direction and then transferred from the reversing unit 111 to the joining unit 113 by the second transfer arm 171 of the transfer unit 112 .
  • the second transfer arm 171 holds only the outer peripheral portion of the joint surface S J of the support wafer S, the joint surface S J is not contaminated by, for example, particles and the like attached to the second transfer arm 171 .
  • the support wafer S transferred to the joining unit 113 is attracted and held by the second holding unit 201 (Operation A 8 in FIG. 26 ).
  • the second holding unit 201 holds the support wafer S while the joint surface S J of support wafer S faces downward.
  • the horizontal position of the first holding unit 200 is adjusted by the moving mechanism 220 such that the target wafer W faces the support wafer S (Operation A 9 in FIG. 26 ).
  • the pressure in the pressure vessel 261 of the pressing mechanism 260 may be made to be an atmospheric pressure, or a gap may be formed between the upper surface of the second holding unit 201 and the pressure vessel 261 .
  • the second holding unit 201 is supported by the support members 223 .
  • the vertical distance between the target wafer W and the support wafer S is adjusted to be a predetermined distance (Operation A 10 in FIG. 26 ).
  • this predetermined distance is a height where a central portion of the support wafer S makes contact with the target wafer W when the seal member 231 makes contact with the first holding unit 200 and central portions of the second holding unit 201 and support wafer S are also bent as described later.
  • an atmosphere of the joining space R is inhaled through the intake pipe 241 .
  • the atmosphere of the joining space R is also inhaled, thereby reducing the pressure in the joining space R.
  • the second holding unit 201 cannot hold the support wafer S, so that the support wafer S falls downward, as shown in FIG. 31 .
  • the entire joint surface S J of the support wafer S comes into contact with the entire joint surface W J of the target wafer W.
  • the support wafer S comes into contact with the target wafer W gradually from its central portion, which has been in contact with the target wafer W, toward an outer portion in a radial direction.
  • the height of the support members 223 is adjusted, and the lower surface of the second holding unit 201 is brought into contact with the non-joint surface S N of support wafer S.
  • the seal member 231 is elastically deformed, thereby bringing the first holding unit 200 and the second holding unit 201 into contact with each other.
  • the heating mechanisms 211 and 242 heat the target wafer W and the support wafer S to a predetermined temperature, for example, 200 degrees C.
  • the pressing mechanism 260 presses the second holding unit 201 downward at a predetermined pressure, for example, 0.5 MPa. Accordingly, the target wafer W and the support wafer S more securely adhere to each other, thereby being joined (Operation A 12 in FIG. 26 ).
  • the target wafer W is thinned.
  • the outside adhesive G E protrudes excessively more than a position of an end of the target wafer W after being thinned (shown by an alternated long and short dash line in FIG. 33 )
  • the outside adhesive G E is stuck to a device for thinning the target wafer W. If so, the target wafer W cannot be appropriately thinned.
  • the outside adhesive G E protrudes excessively less than the position of the end of the target wafer W after being thinned, the outer peripheral portion of the target wafer W may be damaged.
  • the outside adhesive G E protruding from the outer lateral side of the stacked wafer T may have a size such that the position of the end of the outside adhesive G E after its surface is removed corresponds to the position of the end of the target wafer W after being thinned.
  • a predetermined distance L of the outer peripheral portion W E , on which the adhesive G is removed in the above-described Operation A 2 , from the outer lateral side W S of the target wafer W is determined such that the position of the lower end of the outside adhesive G E after its surface is removed corresponds to the position of the end of the target wafer W after being thinned.
  • the outside adhesive protruding from the outer lateral side of the stacked wafer T is formed as shown by a dotted line in FIG. 33 in Operation A 12 and protrudes more than the outside adhesive G E of this embodiment.
  • the adhesive G on the outer peripheral portion W E is removed in Operation A 2 .
  • the predetermined distance L of the outer peripheral portion W E from the outer lateral side W S of the target wafer W is determined by the control unit 370 , based on at least the type of the adhesive G, a target film thickness of the adhesive G applied on the target wafer W in Operation A 1 , the heat processing temperature at which the target wafer W is heated in Operation A 3 or A 12 , or the pressure at which the target wafer W and the support wafer S are pressed in Operation A 12 .
  • the stacked wafer T with the target wafer W and the support wafer S joined is transferred from the joining unit 113 to the delivery units 110 by the first transfer arm 170 of the transfer unit 112 .
  • the stacked wafer T transferred to the delivery units 110 is delivered to the delivery arm 120 through the wafer support pins 121 and also delivered from the delivery arm 120 to the wafer transfer device 61 .
  • the stacked wafer T is transferred to the heat processing device 42 by the wafer transfer device 61 .
  • the temperature of the stacked wafer T is adjusted to a predetermined temperature, for example, normal temperature (23 degrees C.).
  • the stacked wafer T is transferred to the transition device 51 by the wafer transfer device 61 and then transferred to a predetermined cassette, cassette C T , of the cassette mounting plates 11 by the wafer transfer device 22 of the carry-in/carry-out station 2 . In this way, a series of the joining processes of the target wafer W and the support wafer S are completed.
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed in Operation A 2 .
  • the outside adhesive G E can be prevented from protruding from a gap between the target wafer W and the support wafer S. If so, the outside adhesive G E is not stuck to, for example, the wafer transfer device 61 or processing devices configured to perform predetermined processing on the target wafer W, the support wafer S and the stacked wafer T. Thus, the target wafer W and the support wafer S can be appropriately joined.
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed in Operation A 2 . For this reason, it may not be stuck to a device of thinning the target wafer W, which is installed outside the joining system 1 , and the outer peripheral portion of the target wafer W that has been joined is not also damaged.
  • the predetermined distance L of the outer peripheral portion W E from the outer lateral side W S of the target wafer W is determined by the control unit 370 in Operation A 2 . For this reason, it is possible to appropriately remove the adhesive G on the outer peripheral portion W E of the target wafer W in Operation A 2 and to form the outside adhesive G E at a predetermined size in Operation A 12 .
  • the adhesive G can be certainly prevented from being stuck to a device, such as the wafer transfer device 61 , which is positioned outside the coating device 40 .
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed before the target wafer W is heat-processed in Operation A 3 , the removal may be performed after Operation A 3 .
  • an adhesive removal device 400 is stacked on the coating device 40 .
  • the adhesive removal device 400 has a configuration in which the adhesive nozzle 292 and its attendant members 290 , 291 and 294 to 296 are omitted from the above-described coating device 40 and the solvent nozzle 302 and its attendant members 301 to 307 are installed thereto. Also, in the embodiment, the solvent nozzle 302 and its attendant members 301 to 307 may be omitted from the coating device 40 .
  • the coating device 40 coats the target wafer W with the adhesive G and does not remove the adhesive G on the outer peripheral portion W E of the target wafer W.
  • the heat processing device 41 heats the target wafer W at a predetermined temperature to cure the adhesive G.
  • the target wafer W is transferred to the adhesive removal device 400 by the wafer transfer device 61 .
  • the solvent for removing the adhesive G is then supplied to the outer peripheral portion W E of the target wafer W through the solvent nozzle 302 , the adhesive G on the outer peripheral portion W E of the target wafer W is removed by the solvent for removing the adhesive G.
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed in this embodiment, when the target wafer W and the support wafer S are pressed and joined in the subsequent Operation A 12 , the outside adhesive G E can be prevented from protruding from a gap between the target wafer W and the support wafer S. Therefore, the target wafer W and the support wafer S can be appropriately joined.
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed after the adhesive G is heated and cured, the adhesive G can be removed with high precision.
  • an image of the target wafer W from which the adhesive G on the outer peripheral portion W E is removed may be captured.
  • An image capturing unit configured to capture an image of the target wafer W is installed inside the coating device 40 provided with the solvent nozzle 302 or inside the adhesive removal device 400 . In the embodiment, a case where the image capturing unit is installed inside the coating device 40 will be described.
  • a camera 410 as the image capturing unit is installed on the ceiling surface of the processing vessel 270 .
  • the camera 410 may capture an image of the target wafer W held by the spin chuck 280 .
  • the image captured by the image capturing unit 410 is output to the control unit 370 .
  • a reference image of the target wafer W from which the adhesive G on the outer peripheral portion W E is appropriately removed is stored in the control unit 370 in advance.
  • the other configurations of the coating device 40 are the same as those of the coating device 40 of the above-described embodiment, and thus, a description thereof will be omitted.
  • the camera 410 captures the image of the target wafer W. Then, the control unit 370 compares the captured image with the previously stored image, thereby inspecting whether or not the adhesive G on the outer peripheral portion W E is appropriately removed. Thereafter, the above-described Operations A 3 to A 12 are performed on the target wafer W of which the captured image is normal, whereby the joining processing is performed. In the meantime, the target wafer W of which the captured image is abnormal is collected in the cassette C T of the carry-in/carry-out station 2 .
  • the abnormal target wafer in which the adhesive G on the outer peripheral portion W E is not appropriately removed can be collected, a product yield of the stacked wafer T can be improved.
  • the abnormal target wafer W is not subjected to the subsequent processing as described above, it is possible to improve a throughput of the joining process in the joining system 1 .
  • another adhesive removal device configured to supply the solvent for removing the adhesive G to the outside adhesive G E protruding from the outer lateral side of the stacked wafer T in the joining device 30 in Operation A 12 to remove the surface of the outside adhesive G E for forming the outside adhesive G E to have a predetermined size may be installed.
  • the other adhesive removal device is installed on, for example, the coating device 40 (or the adhesive removal device 400 ) in the second processing block G 2 .
  • another adhesive removal device 420 has an internally sealable processing vessel 430 .
  • a spin chuck 440 configured to hold and rotate the stacked wafer T is installed in the central portion of the processing vessel 430 .
  • the spin chuck 440 has a horizontal upper surface, on which, for example, a suction port (not shown) configured to suck the stacked wafer T is installed. The suction through the suction port allows the stacked wafer T to be attracted and held on the spin chuck 440 .
  • a chuck drive unit 441 which is provided with, for example, a motor, is installed below the spin chuck 440 .
  • the spin chuck 440 can be rotated at a predetermined speed by the chuck drive unit 441 .
  • the chuck drive unit 441 is equipped with a lift drive source such as a cylinder, and can move the spin chuck 440 up and down.
  • the chuck drive unit 441 is installed on a rail 442 extending along a Y direction (left and right directions in FIG. 36 ).
  • the spin chuck 440 is configured to be movable along the rail 442 by the chuck drive unit 441 .
  • Another solvent supply unit 450 configured to supply a solvent for removing the adhesive G to the outside adhesive G E , which protrudes from the outer lateral side of the stacked wafer T in the joining device 30 , is installed at a lateral side of the spin chuck 440 .
  • the solvent for removing the adhesive G supplied from the other solvent supply unit 450 allows the surface of the outside adhesive G E to be removed.
  • the other solvent supply unit 450 is fixed to the processing vessel 430 by a support member (not shown).
  • the other solvent supply unit 450 has an upper nozzle 451 disposed above the stacked wafer T, and a lower nozzle 452 disposed below the stacked wafer T.
  • the upper nozzle 451 is provided with a ceiling portion 451 a and a sidewall portion 451 b and installed to cover an upper side of the outer peripheral portion of the stacked wafer T.
  • the lower nozzle 452 is provided with a bottom portion 452 a and a sidewall portion 452 b and installed to cover a lower side of the outer peripheral portion of the stacked wafer T.
  • the other solvent supply unit 450 has a substantially rectangular parallelepiped shape. Also, a lateral side of the other solvent supply unit 450 facing the spin chuck 440 is formed with an opening, into which the outer peripheral portion of the stacked wafer T held by the spin chuck 440 is inserted.
  • a supply port 453 through which the solvent for removing the adhesive G is supplied to the outside adhesive G E from the upper side of the stacked wafer T, is formed on a lower surface of the ceiling portion 451 a of the upper nozzle 451 .
  • a supply port 454 through which the solvent for removing the adhesive G is supplied to the outside adhesive G E from the lower side of the stacked wafer T, is formed on an upper surface of the bottom portion 452 a of the lower nozzle 452 .
  • a supply pipe 455 through which the solvent for removing the adhesive G is supplied to the upper nozzle 451 and the lower nozzle 452 , is connected to the upper nozzle 451 and the lower nozzle 452 .
  • the supply pipe 455 is in communication with a solvent supply source 456 configured to reserve the solvent for removing the adhesive G therein.
  • a supply kit 457 including a valve, a flow controller or the like configured to control the flow of the solvent for removing the adhesive G is installed at the supply pipe 456 .
  • an organic thinner is used as the solvent for removing the adhesive G
  • trimethylbenzen (mesitylene) is used in the embodiment.
  • a discharge pipe 460 through which the solvent for removing the adhesive G after the surface of the outside adhesive G E is removed is drained and an atmosphere of a region surrounded by the upper nozzle 451 and the lower nozzle 452 is exhausted, is installed between a sidewall portion 451 b of the upper nozzle 451 and a sidewall portion 452 b of the lower nozzle.
  • the discharge pipe 460 is connected to an ejector 461 .
  • a cup (not shown) configured to collect liquid scattered or falling from the stacked wafer T is installed around the spin chuck 440 and outside the other solvent supply unit 450 .
  • the cup has the same configuration as the cup 282 in the coating device 40 .
  • the spin chuck 440 is moved along the rail 442
  • the other solvent supply unit 450 may be moved in a horizontal direction (Y direction in FIGS. 36 and 37 ).
  • the stacked wafer T which is joined in Operation A 12 and then has a temperature adjusted to a predetermined temperature, is transferred to the other adhesive removal device 420 by the wafer transfer device 61 .
  • the stacked wafer T carried in the other adhesive removal device 420 is delivered from the wafer transfer device 61 to the spin chuck 440 to be attracted and held.
  • the non-joint surface W N of the target wafer W is attracted and held.
  • the spin chuck 440 is evacuated to a position in which the stacked wafer T does not collide with the other solvent supply unit 450 .
  • the spin chuck 440 is also moved toward the other solvent supply unit 450 in a horizontal direction, thereby inserting the outer peripheral portion of the stacked wafer T between the upper nozzle 451 and the lower nozzle 452 in the other solvent supply unit 450 .
  • the stacked wafer T is positioned at a center between the upper nozzle 451 and the lower nozzle 452 .
  • the solvent for removing the adhesive G is supplied to the outer peripheral portion of the stacked wafer T from the upper nozzle 451 and the lower nozzle 452 .
  • the supplied solvent for removing the adhesive G flows over the outside adhesive G E by injection pressure from the nozzles 451 and 452 and the centrifugal force generated by the rotation of the stacked wafer T.
  • the solvent for removing the adhesive G causes the surface of the outside adhesive G E to be removed, and the outside adhesive G E is formed to have a predetermined size.
  • the solvent for removing the adhesive G after the surface of the outside adhesive G E is removed or the atmosphere in the other solvent supply unit 450 is forcibly discharged from the discharge pipe 460 by the ejector 461 .
  • the surface of the outside adhesive G E is removed uniformly from the upper and lower sides by the solvent for removing the adhesive G from the upper nozzle 451 and the lower nozzle 452 . That is, a distance between an upper end of the outside adhesive G E after its surface is removed and the lower surface of the support wafer S is equal to a distance between the lower end of the outside adhesive G E and the target wafer W. In this way, as the surface of the outside adhesive G E is removed so that the upper and lower sides thereof are uniform, the subsequent transfer or processing of the stacked wafer T may be appropriately performed.
  • the outside adhesive G E is formed to have a predetermined size by controlling the removal amount of the surface of the outside adhesive G E .
  • the removal amount of the surface of the outside adhesive G E is also controlled according to the supply amount, supply time, supply timing, drain amount, by the ejector 461 , of the adhesive G, or the like.
  • the adhesive G on the outer peripheral portion W E of the target wafer W is removed in Operation A 2 , and the surface of the outside adhesive G E protruding from the stacked wafer T is also removed in Operation A 12 .
  • the outside adhesive G E protruding from the stacked wafer T is adjusted in two steps, the outside adhesive G E may be more appropriately formed to have a predetermined size. Therefore, the target wafer W and the support wafer S may be more appropriately joined to each other.
  • the target wafer W and the support wafer S are joined to each other in a state where the target wafer W is arranged in the lower side and the support wafer S is arranged in the upper side
  • the upper and lower arrangement of the target wafer W and support wafer S may be reversed.
  • the above-described Operations A 1 to A 5 are performed on the support wafer S, and the joint surface S J of the support wafer S is coated with the adhesive G.
  • the above-described Operations A 6 to A 8 are performed on the target wafer W, and then, the front and rear surfaces of the target wafer W are reversed.
  • the above-described Operations A 9 to A 12 are performed to join the support wafer S and the target wafer W to each other.
  • the target wafer W can be coated with the adhesive G.
  • both the target wafer W and the support wafer S may be coated with the adhesive G.
  • the target wafer W is heated at a predetermined temperature of 100 to 300 degrees C. in Operation A 3
  • the target wafer W may be heat-processed in two steps.
  • the target wafer W is heated at a first heat processing temperature of, for example, 100 to 150 degrees C., in the heat processing device 41 , and then heated at a second heat processing temperature of, for example, 150 to 300 degrees C., in the heat processing device 44 .
  • the temperature of each heating mechanism in the heat processing devices 41 and 44 may be maintained constant. Therefore, since the temperature of the heating mechanism need not be adjusted, a throughput of the joining processing of the target wafer W and the support wafer S can be more improved.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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JP2011-195445 2011-09-07
JP2011195445A JP5421967B2 (ja) 2011-09-07 2011-09-07 接合方法、プログラム、コンピュータ記憶媒体及び接合システム
PCT/JP2012/069826 WO2013035466A1 (ja) 2011-09-07 2012-08-03 接合方法、コンピュータ記憶媒体及び接合システム

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US20220020603A1 (en) * 2020-07-20 2022-01-20 Disco Corporation Sheet and protective member forming method

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FR2986175A1 (fr) * 2012-01-31 2013-08-02 St Microelectronics Tours Sas Procede et dispositif de decoupe d'une plaquette
JP6214182B2 (ja) * 2013-03-25 2017-10-18 東京応化工業株式会社 基板の処理方法
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JP6151204B2 (ja) * 2014-03-04 2017-06-21 東京エレクトロン株式会社 接合方法および接合システム
KR101615426B1 (ko) * 2014-03-07 2016-04-25 (주)에스티아이 슬러리 분사노즐 및 이를 이용한 기판 처리장치
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JP6854696B2 (ja) * 2017-05-02 2021-04-07 東京エレクトロン株式会社 接合装置および接合方法
JP7365827B2 (ja) * 2019-03-13 2023-10-20 東京エレクトロン株式会社 接合システム、および接合方法
CN110993496B (zh) * 2019-12-23 2022-06-10 三芯威电子科技(江苏)有限公司 一种半导体晶圆芯片的加工方法
JP7373436B2 (ja) * 2020-03-09 2023-11-02 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP2022041447A (ja) * 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
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TWI540660B (zh) 2016-07-01
US20140224763A1 (en) 2014-08-14
JP5421967B2 (ja) 2014-02-19
KR101847681B1 (ko) 2018-04-10
WO2013035466A1 (ja) 2013-03-14
JP2013058567A (ja) 2013-03-28
KR20140057302A (ko) 2014-05-12

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