JP5552466B2 - 接合方法、プログラム、コンピュータ記憶媒体及び接合システム - Google Patents
接合方法、プログラム、コンピュータ記憶媒体及び接合システム Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
30〜33 接合装置
40 塗布装置
41 接着剤除去装置
42〜47 熱処理装置
292 接着剤ノズル
320 溶剤供給部
328、329 超音波振動子
400 制御部
500 溶剤ノズル
501 他の超音波振動子
510 他の接着剤除去装置
G 接着剤
GE 外側接着剤
S 支持ウェハ
T 重合ウェハ
W 被処理ウェハ
Claims (10)
- 被処理基板と支持基板を接合する接合方法であって、
被処理基板又は支持基板に接着剤を塗布する接着剤塗布工程と、
その後、接着剤を介して、被処理基板と支持基板を押圧して接合する接合工程と、
その後、前記接着剤塗布工程において塗布された接着剤のうち、前記接合工程において被処理基板と支持基板の間の接着剤が当該被処理基板と支持基板を接合した重合基板の外側面からはみ出た外側接着剤に対して、接着剤の溶剤を供給すると共に、当該外側接着剤に超音波を付与して、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去する接着剤除去工程と、を有し、
前記接着剤除去工程後、被処理基板は薄化され、
前記接着剤除去工程における前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさであることを特徴とする、接合方法。 - 前記接着剤塗布工程後且つ前記接合工程前に、接着剤が塗布された被処理基板又は支持基板の外周部上の接着剤に接着剤の溶剤を供給する共に、当該外周部上の接着剤に超音波を付与して、前記外周部上の接着剤を除去する他の接着剤除去工程を有することを特徴とする、請求項1に記載の接合方法。
- 前記他の接着剤除去工程後且つ前記接合工程前に、接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理工程を有することを特徴とする、請求項2に記載の接合方法。
- 前記接着剤塗布工程後且つ前記他の接着剤除去工程前に、接着剤が塗布された被処理基板又は支持基板を所定の温度に加熱する熱処理工程を有することを特徴とする、請求項2に記載の接合方法。
- 請求項1〜4のいずれかに記載の接合方法を接合システムによって実行させるために、当該接合システムを制御する制御部のコンピュータ上で動作するプログラム。
- 請求項5に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
- 被処理基板と支持基板を接合する接合システムであって、
被処理基板又は支持基板に接着剤を供給して塗布する接着剤供給部と、
前記接着剤供給部によって塗布された接着剤を介して、被処理基板と支持基板を押圧して接合する接合装置と、
溶剤供給部と超音波供給部を備えた接着剤除去装置と、を有し、
前記接着剤除去装置は、前記接合装置において被処理基板と支持基板を接合した後に、前記接着剤供給部によって塗布された接着剤のうち、前記接合装置において被処理基板と支持基板の間の接着剤が当該被処理基板と支持基板を接合した重合基板の外側面からはみ出た外側接着剤に対して、前記溶剤供給部から接着剤の溶剤を供給すると共に、当該外側接着剤に前記超音波供給部から超音波を付与し、前記外側接着剤が所定の大きさに形成されるように当該外側接着剤の表面を除去し、
前記接着剤除去装置において前記外側接着剤の表面を除去後、被処理基板は薄化され、
前記接着剤除去装置において形成される前記外側接着剤の所定の大きさは、前記外側接着剤の端部の位置と薄化後の被処理基板の端部の位置が一致する大きさであることを特徴とする、接合システム。 - 前記接着剤供給部において接着剤を塗布した後であって前記接合装置において被処理基板と支持基板を接合する前に、前記接着剤供給部によって接着剤が塗布された被処理基板又は支持基板の外周部上の接着剤を除去するように、前記外周部上の接着剤に接着剤の溶剤を供給する他の溶剤供給部と、前記外周部上の接着剤に超音波を付与する他の超音波供給部と、を有することを特徴とする、請求項7に記載の接合システム。
- 前記接着剤供給部、前記他の溶剤供給部及び前記他の超音波供給部を備えた塗布装置と、
前記塗布装置において接着剤が塗布されて前記外周部上の接着剤が除去された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置を有することを特徴とする、請求項8に記載の接合システム。 - 前記接着剤供給部を備えた塗布装置と、
前記塗布装置において接着剤が塗布された被処理基板又は支持基板を、所定の温度に加熱する熱処理装置と、
前記他の溶剤供給部と前記他の超音波供給部を備え、前記熱処理装置において所定の温度に加熱された被処理基板又は支持基板の前記外周部上の接着剤に対して、前記他の溶剤供給部から接着剤の溶剤を供給すると共に、当該外周部上の接着剤に前記他の超音波供給部から超音波を付与して、前記前記外周部上の接着剤を除去する他の接着剤除去装置と、を有することを特徴とする、請求項8に記載の接合システム。
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PCT/JP2012/071994 WO2013035621A1 (ja) | 2011-09-07 | 2012-08-30 | 接合方法、コンピュータ記憶媒体及び接合システム |
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