US8236161B2 - Apparatus for electrolyzing sulfuric acid, method of performing electrolysis, and apparatus for processing a substrate - Google Patents
Apparatus for electrolyzing sulfuric acid, method of performing electrolysis, and apparatus for processing a substrate Download PDFInfo
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- US8236161B2 US8236161B2 US12/274,681 US27468108A US8236161B2 US 8236161 B2 US8236161 B2 US 8236161B2 US 27468108 A US27468108 A US 27468108A US 8236161 B2 US8236161 B2 US 8236161B2
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- sulfuric acid
- solution
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- supply
- anode chamber
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title claims abstract description 268
- 238000005868 electrolysis reaction Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 95
- 239000000758 substrate Substances 0.000 title claims description 48
- 239000007800 oxidant agent Substances 0.000 claims abstract description 20
- 229940032330 sulfuric acid Drugs 0.000 claims description 127
- 239000007788 liquid Substances 0.000 claims description 26
- 238000007865 diluting Methods 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 14
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 238000004148 unit process Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 114
- 238000001514 detection method Methods 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008235 industrial water Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- -1 ultra-pure water Chemical compound 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/28—Per-compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/28—Per-compounds
- C25B1/29—Persulfates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- a cleaning step is performed to clean the substrate and remove, from the substrate, residues such as organic substances, metal impurities, particles and resist.
- the substrate is first treated with a process solution, whereby residue is removed from the substrate. Then, the substrate is cleaned with pure water or cleaning solution, removing the residues and the process solution from the substrate.
- Suitable as the process solution is a solution containing an oxidizing agent such as peroxomonosulfuric acid or peroxodisulfuric acid.
- an oxidizing agent such as peroxomonosulfuric acid or peroxodisulfuric acid.
- such a solution may be obtained by adding hydrogen peroxide solution to sulfuric acid.
- the concentration of the sulfuric acid may greatly decrease because the hydrogen peroxide solution is, for example, a 35% aqueous solution. If the process solution is repeatedly recovered and used again, each time mixed with a newly generated process solution, its concentration will decrease and its processing ability will be greatly reduced.
- the apparatus for performing electrolysis has an electrolytic cell.
- the electrolytic cell is separated into an anode chamber and a cathode chamber.
- An anode and a cathode are provided in the anode chamber and the cathode chamber, respectively.
- Sulfuric acid is introduced into both the anode chamber and the cathode chamber.
- the sulfuric acid is subjected to electrolysis in the anode chamber, generating a solution containing an oxidizing agent.
- the solution thus generated is used as a process solution.
- sulfuric acid is supplied to the anode chamber and the cathode chamber through different supply systems. That is, a sulfuric acid tank and a supply pump, which constitute one supply system, are connected to the anode chamber, and a sulfuric acid tank and a supply pump, which constitute another supply system, are connected to the cathode chamber. Since two supply systems are indispensable, the apparatus is inevitably complicated and large.
- An object of this invention is to provide an apparatus for electrolyzing sulfuric acid, by supplying sulfuric acid to the anode chamber and cathode chamber of an electrolytic cell through one supply system, thereby simplifying and miniaturizing the apparatus, and to provide a method of electrolyzing sulfuric acid and an apparatus for processing a substrate.
- an apparatus for electrolyzing sulfuric acid comprises: an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm; a sulfuric acid tank configured to store the sulfuric acid; a supply pipe connecting the sulfuric acid tank to an inlet port of the anode chamber; a connection pipe connecting an outlet port of the cathode chamber to the inlet port of the anode chamber; a first supply pump provided on the supply pipe and configured to supply the sulfuric acid from the sulfuric acid tank to the cathode chamber through the supply pipe; and a drain pipe connected to an outlet port of the anode chamber and configured to supply to a solution tank a solution containing an oxidizing agent generated by electrolysis in the anode chamber.
- a method of electrolyzing sulfuric acid is designed to electrically decompose sulfuric acid in an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm.
- the method comprises: supplying the sulfuric acid to the cathode chamber; supplying the sulfuric acid from the cathode chamber to the anode chamber; and draining from the anode chamber a solution generated in the anode chamber and containing an oxidizing agent.
- An apparatus for processing a substrate according to this invention is designed to process the substrate with a process solution generated by electrolyzing sulfuric acid.
- the apparatus comprises: an electrolysis apparatus configured to electrolyzing the sulfuric acid, thereby generating the process solution containing an oxidizing agent; a solution tank configured to store the process solution generated by electrolyzing the sulfuric acid and containing the oxidizable chemic species; and a process unit configured to process the substrate with the process solution stored in the solution tank.
- the electrolysis apparatus has the configuration described in claim 1 .
- FIG. 1 is a schematic diagram showing structures of an electrolytic cell and a spin process apparatus, both according to an embodiment of the prevent invention.
- FIG. 2 is a magnified sectional view of the electrolytic cell.
- FIG. 1 shows an electrolytic cell 1 and a spin process apparatus 2 .
- the electrolytic cell 1 electrolyzes sulfuric acid and makes a process solution. Using the process solution, the spin process apparatus 2 processes a substrate W.
- the electrolytic cell 1 comprises a tank body 3 that is composed of a pair of vessel members 3 a and a seal 3 b .
- the vessel members 3 a are combined, forming a liquid-tight tank, with the seal 3 b clamped between them.
- the inner space of the electrolytic cell 1 is divided into a cathode chamber 5 and an anode chamber 6 by a diaphragm film 4 .
- the diaphragm film 4 is, for example, a cation exchange membrane.
- the cathode chamber 5 has a cathode 5 a
- the anode chamber 6 has an anode 6 a.
- the anode 6 a is, for example, an insoluble anode (DSA), lead dioxide or conductive diamond. Electrolyzed sulfuric acid generated through electrolysis in the electrolytic cell 1 is applied directly to an object that is to be cleaned thoroughly, such as a silicon wafer having a resist formed on it. Hence, it is desired that the anode 6 a be made of material from which little impurities may elute, e.g., an insoluble anode (DSA), platinum or conductive diamond. Conductive diamond is particularly desirable for the purpose of acquiring high oxygen overvoltage. This is because conductive diamond has a high ability of generating substance which is highly oxidizable, such as peroxomonosulfuric acid or peroxodisulfuric acid.
- the cathode 5 a can be, for example, an insoluble anode (DSA), platinum, carbon or conductive diamond.
- the cathode chamber 5 is connected to a first inflow pipe 8 at the lower end, and to a first outflow pipe 9 at the upper end.
- the anode chamber 6 is connected to a second inflow pipe 11 at the lower end, and to a second outflow pipe 12 at the upper end.
- the first inflow pipe 8 is connected to one end of a liquid-supply pipe 14 , on the middle part of which a first supply pump 13 is provided.
- the other end of the liquid-supply pipe 14 lies on the inner bottom of a sulfuric acid tank 15 .
- the sulfuric acid tank 15 contains sulfuric acid S that has a concentration of 70 to 98 wt % (in mass percentage). Therefore, the sulfuric acid S in the sulfuric acid tank 15 is supplied to the cathode chamber 5 of the electrolytic cell 1 when the first supply pump 13 is driven.
- a connection pipe 17 connects the first outflow pipe 9 connected to the cathode chamber 5 , to the second inflow pipe 11 connected to the anode chamber 6 . Therefore, the sulfuric acid S supplied from the sulfuric acid tank 15 to the cathode chamber 5 via the liquid-supply pipe 14 flows into the anode chamber 6 through the connection pipe 17 .
- sulfuric acid flows into the anode chamber 6 from the cathode chamber 5 .
- a voltage is applied between the cathode 5 a and the anode 6 a .
- the sulfuric acid is thereby electrolyzed.
- hydrogen is generated in the cathode chamber 5
- the solution flows into a solution tank 19 from a discharge pipe 18 connected to the second outflow pipe 12 , along with the hydrogen generated in the cathode chamber 5 and the oxygen generated in the anode chamber 6 .
- the solution is stored, as process solution L, in the solution tank 19 .
- the hydrogen generated in the cathode chamber 5 and the oxygen generated in the anode chamber 6 flow from the solution tank 19 into a catalyst tower (not shown) through a diffusion pipe 22 that is connected to the solution tank 19 and has an open valve 21 . Then, the hydrogen and oxygen are diffused from the catalyst tower into the atmosphere.
- a first monitor 23 is connected to the discharge pipe 18 in which the solution generated in the cathode chamber 6 is flowing.
- the first monitor 23 detects at least one of the properties of the solution, such as electrical conductivity, amount of the oxidizing agent and the concentration of sulfuric acid, and generates a detection signal showing at least one property detected.
- the detection signal is output from the first monitor 23 to a control unit 24 .
- the control unit 24 analyzes the detection signal, determining the properties of the solution. On the basis of the properties thus determined, the control unit 24 controls floe of the sulfuric acid per unit time. Therefore, the solution generated by electrolysis and flowing in the anode chamber 6 is fixed to a specific characteristic (ability).
- a first flowing-path control valve 141 and a cooler 142 are provided at the outlet end and suction end of the supply pump 13 , respectively.
- a second monitor 143 is provided, extending in parallel with the liquid-supply pipe 14 . The second monitor 143 detects the concentration of sulfuric acid.
- a reversion pipe 144 is connected, at one end, to a part of the liquid-supply pipe 14 , which lies between the first flowing-path control valve 141 and the outlet side of the first supply pump 13 .
- the other end of the return pipe 144 is connected to the sulfuric acid tank 15 .
- On the middle part of the return pipe 144 a second flowing-path control valve 145 is provided.
- the control unit 24 controls the first flowing-path valve 141 and the second flowing-path valve 145 , opening or closing these valves 141 and 145 .
- a sulfuric-acid supply pipe 151 and a diluting-liquid supply pipe 152 are connected to the sulfuric acid tank 15 .
- Sulfuric acid is supplied to the sulfuric acid tank 15 through the sulfuric-acid supply pipe 151 .
- a diluting liquid for diluting sulfuric acid such as ultra-pure water, is supplied to the sulfuric acid tank 15 through the diluting-liquid supply pipe 152 .
- a first flow meter 153 and a first supply control valve 154 are provided on the sulfuric-acid supply pipe 151 .
- a second flow meter 155 and a second supply control valve 156 are provided on the diluting-liquid supply pipe 152 .
- the first flow meter 153 measures the amount of the sulfuric acid flowing through the sulfuric-acid supply pipe 151 .
- the second flow meter 155 measures the amount of the diluting liquid flowing through the diluting-liquid supply pipe 152 .
- Data items representing the amounts measured by flow meters 153 and 155 are output to the control unit 24 .
- control unit 24 opens the first supply control valve 154 and the second supply control valve 156 . Sulfuric acid and diluting liquid are thereby supplied to the sulfuric acid tank 15 .
- the control unit 24 closes the first flowing-path valve 141 and opens the second flowing-path valve 145 , and activates the first supply pump 13 .
- the sulfuric acid and the diluting liquid, both supplied to the sulfuric acid tank 15 therefore circulates, flowing through the liquid-supply pipe 14 , return pipe 144 and sulfuric acid tank 15 .
- the sulfuric acid and the diluting liquid are thoroughly stirred, whereby the concentration of the sulfuric acid in the sulfuric acid tank 15 becomes constant.
- the sulfuric acid While so circulating, the sulfuric acid is cooled by the cooler 142 , though heated to a high temperature with the heat generated as the sulfuric acid is diluted with the diluting liquid. This prevents the electrolytic cell 1 from being damaged by heat.
- the electrolytic cell 1 may be heated to a high temperature as electrolysis takes place within it.
- the temperature within the electrolytic cell 1 is detected by a first temperature sensor 158 and a second temperature sensor 159 .
- the first temperature sensor 158 is provided on the center of the wall of the electrolytic cell 1 , which contacts the first cathode 5 a
- the second temperature sensor 159 is provided on the center of the wall of the electrolytic cell 1 , which contacts the anode 6 a .
- the temperature sensors 158 and 159 generate detection signals, which are output to the control unit 24 .
- the first flowing-path valve 141 is closed and the second flowing-path valve 145 is opened, stopping the supply of sulfuric acid to the electrolytic cell 1 .
- the first flowing-path valve 141 has the function of preventing application of an excessive liquid pressure to the electrolytic cell 1 .
- the second monitor 143 detects the concentration of the sulfuric acid flowing through the return pipe 14 and generates a detection signal. This detection signal is output to the control unit 24 .
- the concentration of the sulfuric acid is compared with a preset concentration.
- the amount of the sulfuric acid or diluting liquid is controlled in accordance with the result of the comparison.
- the concentration of the sulfuric acid stored in the sulfuric acid tank 15 is thereby set to, for example, 70 to 98 wt %, and preferably 90 wt %.
- the upper and lower limits of the surface of sulfuric acid stored in the sulfuric acid tank 15 are detected by two liquid-surface sensors 161 and 162 , respectively.
- the detection signals the liquid-surface sensors 161 and 162 generate are output to the control unit 24 .
- the sulfuric acid and diluting liquid are supplied to the sulfuric acid tank 15 .
- the supply of the sulfuric acid and diluting liquid is stopped. The amount of the sulfuric acid and diluting liquid therefore remains within a specific range.
- a supply pipe 25 is provided, with one end located at the inner bottom of the solution tank 19 .
- a second supply pump 26 is provided on the middle part of the supply pipe 25 .
- the other end of the supply pipe 25 is connected via a changeover valve 28 to the first supply nozzle 27 of the spin process apparatus 2 .
- the first supply nozzle 27 is provided at the distal end of a swing arm 31 .
- the swing arm 31 extends above the turntable 32 of the spin process apparatus 2 .
- the turntable 32 holds a substrate W such as a semiconductor wafer.
- the swing arm 31 moves in the radial direction of the substrate W.
- a pressure pipe 33 is connected to the first supply nozzle 27 and can supply an inert gas, such as nitrogen, which is pressurized to a preset pressure.
- an inert gas such as nitrogen
- an inert gas is supplied to the first supply nozzle 27 .
- the solution i.e., process solution L for processing the substrate W, is therefore sprayed by virtue of the inert gas, from the first supply nozzle 27 to the upper surface of the substrate W.
- a second supply nozzle 34 is arranged above the turntable 32 .
- a cleaning solution such as pure water is supplied to the second supply nozzle 34 .
- the second supply nozzle 34 applies the cleaning solution to substrate W.
- the substrate W is cleaned.
- the second supply nozzle 34 may be secured to the swing arm 31 , together with the first supply nozzle 27 .
- the turntable 32 is provided in a cup 35 .
- the cup 35 holds an inner cup 36 shaped like a ring.
- the inner cap 36 can be moved up and down by a drive mechanism (not shown).
- the inner cup 36 partitions the interior of the cup 35 into an inner chamber 37 and an outer chamber 38 .
- a process-solution drain pipe 39 is connected to the bottom of the inner chamber 37 .
- a cleaning-solution drain pipe 41 is connected to the bottom of the outer chamber 38 .
- the inner cup 36 is moved up so that its top may be located above the substrate W.
- the process solution L applied from the first supply nozzle 27 to the upper surface of the rotating substrate W scatters from the circumference of the substrate W, collides with the inner circumferential surface of the inner cup 36 , and falls onto the bottom of the cup 35 .
- the process solution L is then drained from the cup 35 through the process-solution drain pipe 39 that is connected to the bottom of the inner chamber 37 .
- the process solution L thus drained is stored in a first drain tank 40 .
- the inner cup 36 is lowered so that its top may be located below the substrate W. Therefore, the cleaning solution applied from the second supply nozzle 34 to the substrate W scatters from the circumference of the substrate W and falls into the outer chamber 38 of the cup 35 . The cleaning solution is then drained from the cap 35 through the cleaning-solution drain pipe 41 connected to the bottom of the outer chamber 38 .
- the substrate W need not be processed with process solution L.
- the changeover valve 28 provided on the supply pipe 25 is closed.
- a first return pipe 43 is connected, at one end, to the upstream end of the supply pipe 25 , which lies near the changeover valve 28 .
- the other end of the first return pipe 43 is connected to the solution tank 19 .
- a heater 44 and a filter 45 are provided on the first return pipe 43 .
- the changeover valve 28 is closed, the process solution L the second supply pump 26 supplies from the solution tank 19 to the supply pipe 25 flows back into the solution tank 19 through the first return pipe 43 .
- the heater 44 heats the solution L and the filter 45 removes dust from the solution L. Therefore, the process solution L heated to a prescribed temperature and rendered clean is stored in the solution tank 19 .
- a second return pipe 47 is connected, at one end, to the first drain tank 40 .
- the other end of the second return pipe 47 is connected to the solution tank 19 .
- a third supply pump 48 and a filter 49 are provided on the middle part of the second return pipe 47 . The pump 48 can therefore supply the process solution L drained from the cup 35 to the first drain tank 40 , back into the solution tank 19 through the filter 49 .
- the sulfuric acid tank 15 , solution tank 19 and first drain tank 40 are connected to a second drain tank 53 by three drain pipes 52 , respectively. Three open/close valves 51 are provided on these drain pipes 52 , respectively.
- a diluting liquid pipe 54 is connected to the second drain tank 53 , and supplies industrial water, as a diluting liquid, into the second drain tank 53 .
- the diluting liquid thus supplied dilutes the process solution, forming a diluted solution that is, for example, 20 times as large in amount as the of process solution.
- the diluted solution is cooled and then discarded.
- the bottom of the sulfuric acid tank 15 and the bottom of the solution tank 19 are connected by a return pipe 58 , to while a fourth supply pump 57 is connected at its middle part. Controlled by a timer (not shown), the fourth supply pump 57 intermittently operates at regular intervals, supplying the process solution L from the solution tank 19 back into the sulfuric acid tank 15 .
- the process solution L stored in the solution tank 19 may change with time to another substance whose chemical species is oxidizable, the cleaning ability of which may therefore lower. This is why the fourth supply pump 57 supplies the processing solution L from the solution tank 19 back into the sulfuric acid tank 15 at regular intervals, so that the process solution L may be re-used. That is, the process solution L changed in quality with time while being stored in the solution tank 19 can be used again or discharged through the drain pipe 52 .
- the first to third supply pumps 13 , 26 and 48 , the open valve 21 , the changeover valve 28 , and the three open/close valves 51 provided on the three drain pipes 52 , respectively, are opened or closed by the control unit 24 .
- connection pipe 17 connects the cathode chamber 5 and the anode chamber 6 in series.
- the sulfuric acid S can be supplied from the sulfuric acid tank 15 into the cathode chamber 5 and then into the cathode chamber 6 .
- the sulfuric acid S can therefore be electrolyzed.
- the sulfuric acid S can be electrolyzed only if supplied into the cathode chamber 5 by the first supply pump 13 .
- the electrolytic cell 1 can therefore be simpler and smaller as a whole than in the case where sulfuric acid S is supplied to both the cathode chamber 5 and the anode chamber 6 through different paths.
- the solution generated through the electrolysis in the anode chamber 6 is examined for its properties, by means of the monitor 23 .
- the control unit 24 determines the properties of the solution, such as electrical conductivity and the concentration of sulfuric acid. Based on these properties determined, the control unit 23 controls the first supply pump 13 , controlling the flow of sulfuric acid S per unit time in the electrolytic cell 1 .
- the time for electrolyzing a unit amount of sulfuric acid S in the anode chamber 5 can thereby be controlled.
- the solution generated as the electrolysis proceeds in the anode chamber 5 remain unchanged in terms of properties.
- a solution constant in properties can be stored, as process solution L, in the solution tank 19 .
- the process solution L stored in the solution tank 19 is applied to the substrate W held on the turntable 32 of the spin process apparatus 2 . After being processed with the process solution L, the substrate W is cleaned with the cleaning solution.
- the substrate W is appropriately processed with the process solution L if the sulfuric acid S stored in the sulfuric acid tank 15 has a concentration of 70 to 98 wt %, and best processed if the sulfuric acid S has a concentration of 90 wt %, as has been confirmed by experiments.
- the inner cup 36 provided in the cup 35 is moved up before the substrate W is processed with the process solution L, and is moved down before the substrate W is cleaned with cleaning solution.
- the process solution L and the cleaning solution can therefore be recovered independently.
- the process solution L recovered can be supplied back into the solution tank 19 and can therefore be re-used. This can make the spin process apparatus 2 economical.
- the changeover valve 28 may be closed. Then, the process solution L the second supply pump 26 has supplied from the solution tank 19 to the supply pipe 25 can be supplied back into the solution tank 19 through the first return pipe 43 . Thus, as long as the process solution L remains not used, it is circulated through the first return pipe 43 and maintained at a prescribed temperature by the heater 44 .
- the process solution L does not remain in the supply pipe 25 long enough for it to be cooled.
- the process solution L heated to the prescribed temperature can be immediately used again, and applied to the substrate W, when the changeover valve 28 is opened.
- the present invention is not limited to the embodiment described above.
- the apparatus for processing the substrate for example, is not limited to a spin process apparatus. It may be any other process apparatus, such as an apparatus for processing substrates that are transported horizontally, or a batch process apparatus for processing substrates all immersed in the process solution at the same time.
- a connection pipe connects the sulfuric-acid outlet port of the cathode chamber to the sulfuric-acid inlet port of the anode chamber.
- the sulfuric acid pressurized by a pump is supplied first into the cathode chamber and then into the anode chamber.
- the sulfuric acid is electrolyzed.
- An oxidizable solution can therefore be generated, merely by supplying sulfuric acid to the cathode chamber and electrolyzing the sulfuric acid in the anode chamber.
- the electrolysis apparatus can therefore be simpler and smaller than in the case where the sulfuric acid is supplied to both the cathode chamber and the anode chamber through different paths.
- the oxidizing agent generated through anodic oxidation cannot contact the cathode and cannot be reduced into sulfate ions, because the sulfuric acid flows from the cathode chamber to the anode chamber. Therefore, the oxidizing agent can be generated at high efficiency.
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- Condensed Matter Physics & Semiconductors (AREA)
- Electrochemistry (AREA)
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- Metallurgy (AREA)
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- Computer Hardware Design (AREA)
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Applications Claiming Priority (4)
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KR101676693B1 (ko) * | 2010-06-07 | 2016-11-16 | 쿠리타 고교 가부시키가이샤 | 세정 시스템 및 세정 방법 |
US9142424B2 (en) * | 2010-06-07 | 2015-09-22 | Kurita Water Industries Ltd. | Cleaning system and cleaning method |
TW201207155A (en) * | 2010-08-11 | 2012-02-16 | Prometheus Energy Technology Co | Electrolysis device for producing oxyhydrogen gas |
CN103518007A (zh) * | 2011-03-08 | 2014-01-15 | 氯工程公司 | 硫酸电解装置以及硫酸电解方法 |
US8992691B2 (en) | 2011-04-05 | 2015-03-31 | International Business Machines Corporation | Partial solution replacement in recyclable persulfuric acid cleaning systems |
US9831016B2 (en) * | 2012-11-29 | 2017-11-28 | Abb Schweiz Ag | Stripping structure and method for removing enamel insulation from lead ends |
JP5667674B1 (ja) * | 2013-08-20 | 2015-02-12 | サーモス株式会社 | 金属容器を洗浄する洗浄装置 |
JP6359925B2 (ja) | 2014-09-18 | 2018-07-18 | 株式会社Screenホールディングス | 基板処理装置 |
JP6861039B2 (ja) * | 2016-03-30 | 2021-04-21 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
KR102279426B1 (ko) * | 2017-09-07 | 2021-07-19 | 드 노라 페르멜렉 가부시키가이샤 | 전해 장치 |
KR102346529B1 (ko) * | 2019-06-24 | 2021-12-31 | 세메스 주식회사 | 액 공급 유닛, 그리고 이를 가지는 기판 처리 장치 및 방법 |
KR102319966B1 (ko) * | 2019-12-31 | 2021-11-02 | 세메스 주식회사 | 액 공급 유닛, 기판 처리 장치, 그리고 기판 처리 장치를 이용한 기판 처리 방법 |
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- 2008-01-11 KR KR1020087030156A patent/KR101082812B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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WO2008087902A1 (ja) | 2008-07-24 |
US20090078582A1 (en) | 2009-03-26 |
JPWO2008087902A1 (ja) | 2010-05-06 |
TW200844263A (en) | 2008-11-16 |
CN101542020B (zh) | 2011-02-16 |
TWI439571B (zh) | 2014-06-01 |
KR101082812B1 (ko) | 2011-11-11 |
KR20090039676A (ko) | 2009-04-22 |
JP4734416B2 (ja) | 2011-07-27 |
CN101542020A (zh) | 2009-09-23 |
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