US5650595A - Electronic module with multiple solder dams in soldermask window - Google Patents

Electronic module with multiple solder dams in soldermask window Download PDF

Info

Publication number
US5650595A
US5650595A US08/450,441 US45044195A US5650595A US 5650595 A US5650595 A US 5650595A US 45044195 A US45044195 A US 45044195A US 5650595 A US5650595 A US 5650595A
Authority
US
United States
Prior art keywords
solder
site
chip
solderable
soldermask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08/450,441
Other languages
English (en)
Inventor
Mark Rudolf Bentlage
Kenneth Michael Fallon
Lawrence Harold White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US08/450,441 priority Critical patent/US5650595A/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WHITE, LAWRENCE HAROLD, BENTLAGE, MARK RUDOLF, FALLON, KENNETH MICHAEL
Priority to JP08110996A priority patent/JP3131379B2/ja
Priority to US08/806,863 priority patent/US5798285A/en
Application granted granted Critical
Publication of US5650595A publication Critical patent/US5650595A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2081Compound repelling a metal, e.g. solder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0315Oxidising metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/243Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads

Definitions

  • the present invention relates to an electronic module and method of making which employs a chip carrier with metal oxide solder dams on top of circuit lines, the circuit lines having end portions which are located within a soldermask window and are attached to a chip by solder joints.
  • An electronic module includes a plurality of integrated circuit semiconductor devices, hereinafter referred to as chips, which are electrically connected at multiple sites to circuit lines on a carrier substrate.
  • the carrier substrate is an epoxy fiberglass board which has circuit lines between the various chips and has vias which connect the circuit lines to other circuit lines and/or components on an opposite side of the board or to components laminated within the board.
  • One flat side of a chip has multiple C4 solder balls or solder bumps which are soldered to electrodes within the chip.
  • C4 Controlled Collapse Chip Connection
  • solder bump on the chip may be solder having a high melting point (“high melt solder”) and the solder on the circuit line may be solder with a low melting point (“low melt solder”).
  • high melt solder solder
  • low melt solder solder
  • the solder ball acts as a stud to produce a standoff of the chip from the substrate.
  • the area around each solder joint is encapsulated to protect the joint from moisture and chemicals. If all the solder joints are properly encapsulated the electronic module will have a long life. Unfortunately many prior art methods of production do not properly fill the solder joints with an encapsulant.
  • soldermask is then formed with an opening for each solder joint. Each circuit line extends below the soldermask and is covered thereby except for a line segment which is exposed through a soldermask window. Because of the sizes of the soldermask openings it is very difficult to properly register the prior art soldermask openings with the numerous solder joint locations.
  • FCA flip chip attach
  • One of the last steps is to dispense an underfill encapsulant to protect the solder joints.
  • the soldermask stays in place and forms a part of the final electronic module.
  • the encapsulant has to travel in a confined space between the chip and the carrier substrate to the many solder joints, some of which may be remotely located below a center portion of a chip.
  • Each solder joint is surrounded by edges of a respective soldermask window. These edges impede the flow of the encapsulant throughout the soldermask window causing air voids. Air voids expand and contract due to temperature changes which can exert forces on the solder joints. These forces can separate chip electrodes from the circuit lines.
  • the step of encapsulating the solder joints is essentially the last step in the production of the electronic module. This means that production losses due to voids in the encapsulant cost more than losses due to other causes earlier in the cycle of production. There is a strong felt need for a method of making electronic modules which are free of voids and which is easier to implement.
  • the present invention provides a unique electronic module, which has improved integrity, and a method of making the electronic module which produces a significantly higher production yield.
  • pattern plating is employed for forming the circuit lines on the carrier substrate in the same manner as the prior art method. The remainder of the steps in the present method are significantly different from the prior art method.
  • a solder-wettable material such as nickel
  • a second resist with a pattern for solder sites is then formed on top of the first resist.
  • Solder is plated on the circuit lines at solder sites. At this stage additional solder can be plated at each solder site to ensure that each solder site has sufficient solder to make a good solder joint.
  • the first and second resists are then stripped and copper foil around the circuit lines is then etched away. During this process the nickel layer on top of the circuit lines protects the circuit lines from a copper etchant.
  • a soldermask is then formed on the carrier substrate over the circuit lines except for the chip sites.
  • the soldermask has a single large window at each chip site which has lateral dimensions which are slightly larger than the lateral dimensions of the chip to be connected at the chip site. Registration of the soldermask with the solder sites is easily implemented.
  • the nickel layer on top of the circuit lines within the chip site windows quickly oxidizes.
  • the oxidized nickel then provides solder dams which extend along the lines within a chip site to locations immediately adjacent the solder sites.
  • the chips are then placed within the soldermask windows and the flip chip attached method is employed to electrically connect the chips to the circuit lines with solder joints.
  • the encapsulant is dispensed at the chip site. Since there are no soldermask window edges close to the solder joints the encapsulant can easily fill around the solder joints without creating voids. Accordingly, the production yield is significantly improved and the end product has higher integrity. Essentially, the nickel oxide solder dams take the place of the small soldermask windows of the prior art so that the soldermask of the present invention is only required to mask the circuit lines beyond the chip sites.
  • An object of the present invention is to provide a method of making a void free electronic module.
  • Another object is to provide an electronic module which has a soldermask with only one soldermask opening for each chip site.
  • a further object is to provide a method of making an electronic module wherein a soldermask can be more easily registered with solder sites.
  • Still another object is to provide an electronic module which has metal oxide solder dams along end portions of circuit lines, the end portions being located within a window of a soldermask and the soldermask masking only areas outside perimeters of chip sites.
  • Still a further object is to provide a higher yield method of making higher integrity electronic modules at a lower cost.
  • Still another object is to provide a method of making electronic modules which enables providing additional solder at solder sites so that complete solder joints are made upon reflow.
  • FIG. 1 is a partial plan view of a prior art electronic module.
  • FIG. 2 is an enlargement of a center portion of FIG. 1 showing circuit lines extending into a chip site.
  • FIG. 3 is an enlargement of one of the circuit lines and a portion of the soldermask of FIG. 2 with a segment of the circuit line exposed by a rectangular window of the soldermask.
  • FIG. 4 is the same as FIG. 3 except a portion of a chip is electrically connected to the circuit line by a C4 solder ball.
  • FIG. 5 is a cross section of FIG. 4 taken along plane V--V of FIG. 4.
  • FIG. 6 is a block diagram showing an exemplary method of construction of the prior art electronic module.
  • FIG. 7 is a partial plan view of the present electronic module.
  • FIG. 8 is an enlargement of the center portion of FIG. 7 to show the circuit lines extending into a chip site.
  • FIG. 9 is an enlargement of a portion of FIG. 8 showing one solder lead extending into a chip site.
  • FIG. 10 is the same as FIG. 9 except a portion of a chip is shown electrically connected to the circuit line by a C4 solder ball.
  • FIG. 11 is a cross-sectional view taken along plane XI--XI of FIG. 10.
  • FIG. 12 is a cross section taken along plane XII--XII of FIG. 9.
  • FIG. 13 is a cross section taken along plane XIII--XIII of FIG. 9.
  • FIG. 14 is a modification of the cross section shown in FIG. 13.
  • FIG. 15 is a block diagram showing the method of construction of the present invention.
  • FIG. 1 a portion of a prior art electronic module 20 which comprises a carrier substrate 22, a plurality of circuit traces or lines 24 which are plated on the carrier substrate.
  • the lines which have end portions terminate within a chip site 26.
  • Other ends of the circuit lines are connected to conductive lands 27 which are connected to chip electrodes (not shown) by substrate vias (not shown).
  • the substrate carrier is typically a resin board and the circuit lines are typically copper.
  • An integrated circuit semiconductor device, hereinafter referred to as a chip and shown in phantom at 26, is mounted on the substrate carrier 22 and is connected to the segments of the end portions of the circuit lines 24 which will be explained hereinafter.
  • soldermask 28 Overlaying the circuit lines is a soldermask 28 which has rectangular openings 30, the rectangular openings being transverse the circuit lines so as to expose line segments 32 within the chip site as shown in FIGS. 2 and 3.
  • Each rectangular opening 30 provides a solder site 34 which exposes the aforementioned exposed line segment 32, the line segment 32 being electrically connected to the chip 26 by a solder joint 36 which includes a C4 (controlled collapse chip connection) solder bump 37 and a solder bump 38, as shown in FIG. 5.
  • the C4 solder bump 37 which may be a high melt solder, is located on a bottom flat surface of the chip in electrical connection with a chip electrode or terminal 40 and the solder bump 38, which may be low melt solder, is located on the line segment 32.
  • FCA flip chip attach
  • the space between the chip and the substrate carrier is filled with an encapsulant which is typically a curable organic composition containing a thermo-setting binder.
  • the encapsulant is dispensed into the space between the chip and the substrate carrier in the chip site with the intent that all crevices will be filled and that no voids will remain.
  • the prior art method is very susceptible to voids because of the multiple crevices and small spaces between the soldermask edges 43 and the solder joint 36, as shown in FIG. 5.
  • Production runs of prior art electronic modules result in a portion of the electronic modules fabricated with a void 42 in the encapsulant. This void can expand and contract due to temperature changes which may break a solder joint between the chip and a line segment.
  • the first step is to provide a plating resist which provides a pattern for the circuit lines 24. Copper is then plated or deposited into the openings which provides the circuit line pattern as shown in FIG. 1. Plating may be accomplished by electroplating copper into the openings in the plating resist openings employing a copper foil (not shown) on the carrier substrate 22 as a return path. The resist mask employed for constructing the circuit lines is then stripped. Solder is deposited on the circuit lines as a mask while the copper foil on the carrier substrate around the circuit lines is removed by etching. Solder on the circuit lines is then removed.
  • the next step is to form the soldermask 28 with the aforementioned openings for each solder site 32.
  • Solder is then formed on the line segments by an appropriate method such as panel plating or electro-deposition.
  • the chips are then placed face down (flip chip attach) with their C4 solder bumps in registration with the solder sites.
  • the C4 solder bumps 36 are typically flattened prior to registration.
  • Heat is then applied to reflow the solder and make the solder joints.
  • the chip sites are then encapsulated to preserve the integrity of the solder joints. Care has to be taken during heating of the solder so that the face of the chip does not drop to restrict flow or lay on the soldermask to prevent flow of the encapsulant.
  • the prior art soldermask provides an impediment to the flow of the encapsulant and often results in voids because of its edges around each solder site. It should be noted that the soldermask stays in place and forms a part of the completed electronic module.
  • the present electronic module 50 is shown in FIG. 7.
  • This module employs the same carrier substrate 22 as the prior art electronic module 20.
  • Major differences in the present invention are that the copper circuit lines 52 have a layer of solder-wettable metal, such as nickel, and the soldermask 54 has a large central opening 56 about the chip site 26.
  • the prior art circuit lines are not plated with nickel and the prior art soldermask has a rectangular opening for each solder site.
  • the soldermask 54 which stays in place in the completed electronic module, masks only circuit lines outside the chip site 22.
  • end portions of the circuit lines extend into the opening 56.
  • FIG. 9 shows one line extending into the opening 56.
  • the copper line is capped with a nickel layer 60.
  • solder 62 which may be low melt solder, as shown in FIG. 13.
  • the nickel 60 is oxidized as shown by the heavy lines in FIGS. 12-14.
  • the oxidized nickel provides a solder dam at 63 so that solder will only attach to the solder site 58.
  • the flip chip attach method constructs solder joints 36 which connect the terminals of the chip to the circuit lines to form the solder joints.
  • the solder joints are then encapsulated as shown in FIG. 11. No voids are generated since there are no soldermask edges impeding the flow of the encapsulant around the various solder joints.
  • the nickel oxide coatings on the circuit lines serve as soldermasks taking the place of the rectangular openings in the prior art soldermask. Because voids are eliminated production yield is significantly increased by the present invention.
  • the method of making the present invention is shown in FIG. 15.
  • a first plating resist is placed on the carrier substrate which has openings for patterning the circuit lines. Copper is then electroplated or otherwise deposited in the openings for forming the circuit lines.
  • the present method is the same as the prior art method up to this point.
  • a solder-wettable metal such as nickel, is then deposited on the circuit lines employing the pattern of the first plating resist.
  • a second plating resist is then placed over the entire first plating resist except for the solder sites 58. Low melt solder is then optionally deposited in the solder sites making the solder sites solderable to the high melt C4 solder bumps on the chip.
  • the solder site can be coated with benzotriazole which protects the solderability of the copper circuit line and maintains a flat surface for engaging the solder butup.
  • the C4 solder bump on the chip is a high melt solder, which does not melt during heating, a high volume of low melt solder can be deposited in the solder sites patterned by the second plating resist so as to provide a solder volume sufficient to make a good solder joint.
  • the C4 solder bump is a low melt solder but does not have sufficient volume the necessary supplemental low melt solder to make a good joint can be deposited in the solder site patterned by the second plating resist.
  • the present invention provides many options at this stage of the method in order to assure a sufficient volume of solder in order to make a good solder joint.
  • the plating resist employed for the solder sites and the plating resist employed for the circuit lines are then stripped from the carrier substrate.
  • the copper foil on the carrier substrate is then removed by etching employing the nickel layers 60 as masks for the circuit lines.
  • the soldermask window 56 which is slightly larger than the chip site 26, is formed over the carrier substrate as shown in FIGS. 7 and 8.
  • the nickel coating 60 on the circuit lines is oxidized by the heat which is necessary to cure the soldermask. Nickel oxide then provides non-wettable damming surfaces 63 on the circuit lines, these damming surfaces being adjacent the solder sites 58. Oxidation may also be accomplished by heating the lines to approximately 120° C. for approximately two hours.
  • the flip chip attach scheme is then employed for soldering the C4 solder bumps of the chips to the circuit lines at the solder sites 58.
  • the chip sites are then filled with the encapsulant.
  • the encapsulant When the encapsulant is dispensed into the chip sites it completely covers the solder joints without any voids since there are no soldermask edges impeding the flow as caused by the prior art soldermask.
  • Nickel is preferred for the solder-wettable metal because of its unique combination of functions in the present invention. Nickel can be plated on the copper circuit lines, it can be plated with solder to form solder sites, it serves as a mask for the circuit lines when the copper foil is etched from the carrier substrate, it is quickly oxidized by heat, such as 125° C. for two hours. Before or after oxidation solder can be plated on it at solder sites and the oxidized nickel provides an excellent solder dam adjacent the solder sites. It should be understood, however, that other less desirable metals could be employed in lieu of nickel, such as chromium and titanium.
  • a suitable encapsulant for the present invention is taught in U.S. Pat. 5,121,190 assigned to IBM.
  • the above reference to low melt and high melt solders depends on the percentage of tin and lead in the copper. Eutectic solder, which has the lowest reflow temperature, is 63% tin and 37% lead. A typical high melt solder is 90% tin and 10% lead.
  • the thickness of the carrier substrate may be in the order of 0.05 inch.
  • the thickness of the soldermask of the prior art and the soldermask of the present invention may be in the order of 0.001-0.002 inch.
  • the width of the circuit lines is approximately 0.003 inch.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
US08/450,441 1995-05-25 1995-05-25 Electronic module with multiple solder dams in soldermask window Expired - Fee Related US5650595A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US08/450,441 US5650595A (en) 1995-05-25 1995-05-25 Electronic module with multiple solder dams in soldermask window
JP08110996A JP3131379B2 (ja) 1995-05-25 1996-05-01 はんだマスクの窓内に多数のはんだダムを備える電子モジュール
US08/806,863 US5798285A (en) 1995-05-25 1997-02-27 Method of making electronic module with multiple solder dams in soldermask window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/450,441 US5650595A (en) 1995-05-25 1995-05-25 Electronic module with multiple solder dams in soldermask window

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US08/806,863 Division US5798285A (en) 1995-05-25 1997-02-27 Method of making electronic module with multiple solder dams in soldermask window

Publications (1)

Publication Number Publication Date
US5650595A true US5650595A (en) 1997-07-22

Family

ID=23788106

Family Applications (2)

Application Number Title Priority Date Filing Date
US08/450,441 Expired - Fee Related US5650595A (en) 1995-05-25 1995-05-25 Electronic module with multiple solder dams in soldermask window
US08/806,863 Expired - Fee Related US5798285A (en) 1995-05-25 1997-02-27 Method of making electronic module with multiple solder dams in soldermask window

Family Applications After (1)

Application Number Title Priority Date Filing Date
US08/806,863 Expired - Fee Related US5798285A (en) 1995-05-25 1997-02-27 Method of making electronic module with multiple solder dams in soldermask window

Country Status (2)

Country Link
US (2) US5650595A (ja)
JP (1) JP3131379B2 (ja)

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19921936A1 (de) * 1999-05-12 2000-11-16 Valeo Schalter & Sensoren Gmbh Leiterplatte für insbesondere toleranzempfindliche Bauteile
US6281450B1 (en) * 1997-06-26 2001-08-28 Hitachi Chemical Company, Ltd. Substrate for mounting semiconductor chips
US6295709B1 (en) 1995-11-30 2001-10-02 Micron Technology, Inc. Printed circuit board assembly and method for making a printed circuit board assembly
US20030143833A1 (en) * 1999-10-12 2003-07-31 North Corporation Wiring circuit substrate and manufacturing method therefor
US20040040742A1 (en) * 2002-09-02 2004-03-04 Murata Manufacturing Co. Ltd. Mounting board and electronic device using the same
US20040152232A1 (en) * 1998-11-05 2004-08-05 Arnold Richard W. Stud-cone bump for probe tips used in known good die carriers
WO2005055683A1 (ja) 2003-12-02 2005-06-16 Matsushita Electric Industrial Co., Ltd. 電子部品およびその製造方法
US20080251942A1 (en) * 2004-03-29 2008-10-16 Akira Ohuchi Semiconductor Device and Manufacturing Method Thereof
US20090184419A1 (en) * 2005-05-16 2009-07-23 Stats Chippac, Ltd. Flip Chip Interconnect Solder Mask
US20090206493A1 (en) * 2003-11-08 2009-08-20 Stats Chippac, Ltd. Flip Chip Interconnection Pad Layout
US20090236738A1 (en) * 2008-03-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Oxide Layer on Signal Traces for Electrical Isolation in Fine Pitch Bonding
US20100007019A1 (en) * 2008-04-03 2010-01-14 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Composite Bump-on-Lead Interconnection
US20100027223A1 (en) * 2006-12-21 2010-02-04 Silicon Works Co., Ltd. Semiconductor integrated circuit having heat release pattern
US20100065966A1 (en) * 2006-12-14 2010-03-18 Stats Chippac, Ltd. Solder Joint Flip Chip Interconnection
US20100099222A1 (en) * 2006-12-14 2010-04-22 Stats Chippac, Ltd. Solder Joint Flip Chip Interconnection Having Relief Structure
US20100117230A1 (en) * 2008-04-03 2010-05-13 Stats Chippac, Ltd. Flip Chip Interconnection Structure Having Void-Free Fine Pitch and Method Thereof
US20100128394A1 (en) * 2008-11-26 2010-05-27 Seagate Technology Llc Top bond pad bias and variation control
US20100164097A1 (en) * 2008-12-31 2010-07-01 Stats Chippac, Ltd. Semiconductor Device and Method of Confining Conductive Bump Material During Reflow with Solder Mask Patch
US20100176510A1 (en) * 2006-09-22 2010-07-15 Stats Chippac, Inc. Fusible I/O Interconnection Systems and Methods for Flip-Chip Packaging Involving Substrate-Mounted Stud Bumps
US20100193947A1 (en) * 2005-03-25 2010-08-05 Stats Chippac, Ltd. Flip Chip Interconnection Having Narrow Interconnection Sites on the Substrate
US20100237500A1 (en) * 2009-03-20 2010-09-23 Stats Chippac, Ltd. Semiconductor Substrate and Method of Forming Conformal Solder Wet-Enhancement Layer on Bump-on-Lead Site
US20100244245A1 (en) * 2008-03-25 2010-09-30 Stats Chippac, Ltd. Filp Chip Interconnection Structure with Bump on Partial Pad and Method Thereof
US20110076809A1 (en) * 2005-05-16 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Narrow Interconnect Sites on Substrate with Elongated Mask Openings
US20110074024A1 (en) * 2003-11-10 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Bump-on-Lead Interconnection
US20110074022A1 (en) * 2000-03-10 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Flipchip Interconnect Structure
US20110074047A1 (en) * 2003-11-08 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Pad Layout for Flipchip Semiconductor Die
US20110074026A1 (en) * 2008-03-19 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Insulating Layer on Conductive Traces for Electrical Isolation in Fine Pitch Bonding
US20110084386A1 (en) * 2003-11-10 2011-04-14 Stats Chippac, Ltd. Semiconductor Device and Method of Self-Confinement of Conductive Bump Material During Reflow Without Solder Mask
US20110121464A1 (en) * 2009-11-24 2011-05-26 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Electrical Interconnect with Stress Relief Void
US20110121452A1 (en) * 2008-09-10 2011-05-26 Stats Chippac, Ltd. Semiconductor Device Having Vertically Offset Bond on Trace Interconnects on Recessed and Raised Bond Fingers
US20110133334A1 (en) * 2008-12-31 2011-06-09 Stats Chippac, Ltd. Semiconductor Device and Method of Confining Conductive Bump Material with Solder Mask Patch
US20110215468A1 (en) * 2003-11-10 2011-09-08 Stats Chippac, Ltd. Bump-on-Lead Flip Chip Interconnection
US8409978B2 (en) 2010-06-24 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe
US8435834B2 (en) 2010-09-13 2013-05-07 Stats Chippac, Ltd. Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in FO-WLCSP
US8492197B2 (en) 2010-08-17 2013-07-23 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate
USRE44500E1 (en) 2003-11-10 2013-09-17 Stats Chippac, Ltd. Semiconductor device and method of forming composite bump-on-lead interconnection
US8563418B2 (en) 2010-03-09 2013-10-22 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset bond on trace interconnects on different height traces
USRE44562E1 (en) 2003-11-10 2013-10-29 Stats Chippac, Ltd. Solder joint flip chip interconnection having relief structure
USRE44579E1 (en) 2003-11-10 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
USRE44608E1 (en) 2003-11-10 2013-11-26 Stats Chippac, Ltd. Solder joint flip chip interconnection
US8697490B2 (en) 2000-03-10 2014-04-15 Stats Chippac, Ltd. Flip chip interconnection structure
US8841779B2 (en) 2005-03-25 2014-09-23 Stats Chippac, Ltd. Semiconductor device and method of forming high routing density BOL BONL and BONP interconnect sites on substrate
US20140322868A1 (en) * 2012-11-14 2014-10-30 Qualcomm Incorporated Barrier layer on bump and non-wettable coating on trace
US9345148B2 (en) 2008-03-25 2016-05-17 Stats Chippac, Ltd. Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad
US9365947B2 (en) 2013-10-04 2016-06-14 Invensas Corporation Method for preparing low cost substrates
US9847309B2 (en) 2006-09-22 2017-12-19 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate
USRE47600E1 (en) 2003-11-10 2019-09-10 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming electrical interconnect with stress relief void
US10706880B1 (en) 2019-04-02 2020-07-07 Seagate Technology Llc Electrically conductive solder non-wettable bond pads in head gimbal assemblies
WO2024055700A1 (zh) * 2022-09-16 2024-03-21 华为数字能源技术有限公司 塑封模块、塑封方法及电子设备

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872051A (en) * 1995-08-02 1999-02-16 International Business Machines Corporation Process for transferring material to semiconductor chip conductive pads using a transfer substrate
US6336262B1 (en) * 1996-10-31 2002-01-08 International Business Machines Corporation Process of forming a capacitor with multi-level interconnection technology
US6406939B1 (en) 1998-05-02 2002-06-18 Charles W. C. Lin Flip chip assembly with via interconnection
SG75841A1 (en) 1998-05-02 2000-10-24 Eriston Invest Pte Ltd Flip chip assembly with via interconnection
TW396462B (en) 1998-12-17 2000-07-01 Eriston Technologies Pte Ltd Bumpless flip chip assembly with solder via
TW444236B (en) 1998-12-17 2001-07-01 Charles Wen Chyang Lin Bumpless flip chip assembly with strips and via-fill
SG78324A1 (en) 1998-12-17 2001-02-20 Eriston Technologies Pte Ltd Bumpless flip chip assembly with strips-in-via and plating
US6552425B1 (en) * 1998-12-18 2003-04-22 Intel Corporation Integrated circuit package
JP2001326250A (ja) * 2000-05-17 2001-11-22 Nec Corp フリップチップ型半導体装置及び製造方法
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6436734B1 (en) 2000-08-22 2002-08-20 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6660626B1 (en) 2000-08-22 2003-12-09 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6551861B1 (en) 2000-08-22 2003-04-22 Charles W. C. Lin Method of making a semiconductor chip assembly by joining the chip to a support circuit with an adhesive
US6562709B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6403460B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a semiconductor chip assembly
US6562657B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6402970B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US7190080B1 (en) 2000-10-13 2007-03-13 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
US20030087477A1 (en) * 2001-05-02 2003-05-08 Tomohiro Kawashima Repairable flip clip semiconductor device with excellent packaging reliability and method of manufacturing same
US7115986B2 (en) * 2001-05-02 2006-10-03 Micron Technology, Inc. Flexible ball grid array chip scale packages
SG122743A1 (en) 2001-08-21 2006-06-29 Micron Technology Inc Microelectronic devices and methods of manufacture
SG104293A1 (en) * 2002-01-09 2004-06-21 Micron Technology Inc Elimination of rdl using tape base flip chip on flex for die stacking
SG115456A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Semiconductor die packages with recessed interconnecting structures and methods for assembling the same
SG115455A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Methods for assembly and packaging of flip chip configured dice with interposer
US6975035B2 (en) 2002-03-04 2005-12-13 Micron Technology, Inc. Method and apparatus for dielectric filling of flip chip on interposer assembly
SG121707A1 (en) 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
SG115459A1 (en) 2002-03-04 2005-10-28 Micron Technology Inc Flip chip packaging using recessed interposer terminals
SG111935A1 (en) * 2002-03-04 2005-06-29 Micron Technology Inc Interposer configured to reduce the profiles of semiconductor device assemblies and packages including the same and methods
US20040036170A1 (en) 2002-08-20 2004-02-26 Lee Teck Kheng Double bumping of flexible substrate for first and second level interconnects
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7249826B2 (en) * 2004-09-23 2007-07-31 Fujifilm Dimatix, Inc. Soldering a flexible circuit
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
US8288266B2 (en) * 2006-08-08 2012-10-16 Endicott Interconnect Technologies, Inc. Circuitized substrate assembly
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
WO2018115408A1 (en) * 2016-12-23 2018-06-28 Atotech Deutschland Gmbh Method of forming a solderable solder deposit on a contact pad
KR102430750B1 (ko) * 2019-08-22 2022-08-08 스템코 주식회사 회로 기판 및 그 제조 방법

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401126A (en) * 1965-06-18 1968-09-10 Ibm Method of rendering noble metal conductive composition non-wettable by solder
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
US3436818A (en) * 1965-12-13 1969-04-08 Ibm Method of fabricating a bonded joint
US3564522A (en) * 1966-12-16 1971-02-16 Data Disc Inc Transducer with thin film coil and semiconductor switching
US3949125A (en) * 1965-05-14 1976-04-06 Roberts Arthur H Molded solid plastics articles and a method for their manufacture
US4229248A (en) * 1979-04-06 1980-10-21 Intel Magnetics, Inc. Process for forming bonding pads on magnetic bubble devices
US4462534A (en) * 1981-12-29 1984-07-31 International Business Machines Corporation Method of bonding connecting pins to the eyelets of conductors formed on a ceramic substrate
US4504283A (en) * 1982-07-22 1985-03-12 Superior Finishers, Incorporated Cushioned abrasive articles, and method of manufacture
US4546541A (en) * 1983-10-14 1985-10-15 Applied Magnetics Corporation Method of attaching electrical conductors to thin film magnetic transducer
US4579806A (en) * 1983-09-02 1986-04-01 Basf Aktiengesellschaft Positive-working photosensitive recording materials
US4761699A (en) * 1986-10-28 1988-08-02 International Business Machines Corporation Slider-suspension assembly and method for attaching a slider to a suspension in a data recording disk file
US4818728A (en) * 1986-12-03 1989-04-04 Sharp Kabushiki Kaisha Method of making a hybrid semiconductor device
US4825284A (en) * 1985-12-11 1989-04-25 Hitachi, Ltd. Semiconductor resin package structure
US4864471A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Component for surface mounting and method for fastening a component for surface mounting
US4996623A (en) * 1989-08-07 1991-02-26 International Business Machines Corporation Laminated suspension for a negative pressure slider in a data recording disk file
US4999699A (en) * 1990-03-14 1991-03-12 International Business Machines Corporation Solder interconnection structure and process for making
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
US5128746A (en) * 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
US5334857A (en) * 1992-04-06 1994-08-02 Motorola, Inc. Semiconductor device with test-only contacts and method for making the same
US5378859A (en) * 1992-03-02 1995-01-03 Casio Computer Co., Ltd. Film wiring board
US5574629A (en) * 1989-06-09 1996-11-12 Sullivan; Kenneth W. Solderless printed wiring devices

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949125A (en) * 1965-05-14 1976-04-06 Roberts Arthur H Molded solid plastics articles and a method for their manufacture
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
US3401126A (en) * 1965-06-18 1968-09-10 Ibm Method of rendering noble metal conductive composition non-wettable by solder
US3436818A (en) * 1965-12-13 1969-04-08 Ibm Method of fabricating a bonded joint
US3564522A (en) * 1966-12-16 1971-02-16 Data Disc Inc Transducer with thin film coil and semiconductor switching
US4229248A (en) * 1979-04-06 1980-10-21 Intel Magnetics, Inc. Process for forming bonding pads on magnetic bubble devices
US4462534A (en) * 1981-12-29 1984-07-31 International Business Machines Corporation Method of bonding connecting pins to the eyelets of conductors formed on a ceramic substrate
US4504283A (en) * 1982-07-22 1985-03-12 Superior Finishers, Incorporated Cushioned abrasive articles, and method of manufacture
US4579806A (en) * 1983-09-02 1986-04-01 Basf Aktiengesellschaft Positive-working photosensitive recording materials
US4546541A (en) * 1983-10-14 1985-10-15 Applied Magnetics Corporation Method of attaching electrical conductors to thin film magnetic transducer
US4864471A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Component for surface mounting and method for fastening a component for surface mounting
US4825284A (en) * 1985-12-11 1989-04-25 Hitachi, Ltd. Semiconductor resin package structure
US4761699A (en) * 1986-10-28 1988-08-02 International Business Machines Corporation Slider-suspension assembly and method for attaching a slider to a suspension in a data recording disk file
US4818728A (en) * 1986-12-03 1989-04-04 Sharp Kabushiki Kaisha Method of making a hybrid semiconductor device
US5574629A (en) * 1989-06-09 1996-11-12 Sullivan; Kenneth W. Solderless printed wiring devices
US4996623A (en) * 1989-08-07 1991-02-26 International Business Machines Corporation Laminated suspension for a negative pressure slider in a data recording disk file
US4999699A (en) * 1990-03-14 1991-03-12 International Business Machines Corporation Solder interconnection structure and process for making
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
US5128746A (en) * 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
US5378859A (en) * 1992-03-02 1995-01-03 Casio Computer Co., Ltd. Film wiring board
US5334857A (en) * 1992-04-06 1994-08-02 Motorola, Inc. Semiconductor device with test-only contacts and method for making the same

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
D. L. Elam et al., "Selective Plating for Surface-Mounted Component Lead", IBM Technical Disclosure Bulletin, vol. 29, No. 4, Sep. 1986, pp. 1652-1653.
D. L. Elam et al., Selective Plating for Surface Mounted Component Lead , IBM Technical Disclosure Bulletin, vol. 29, No. 4, Sep. 1986, pp. 1652 1653. *
E. W. Clavez et al., "Solder Stop for Contact Pin", IBM Technical Disclosure Bulletin, vol. 10, No. 1, Jun. 1967, p. 7.
E. W. Clavez et al., Solder Stop for Contact Pin , IBM Technical Disclosure Bulletin, vol. 10, No. 1, Jun. 1967, p. 7. *
N. G. Koopman et al., "Controlled Solder Dam Structure by Special Evaporation-Gun Design", IBM Technical Disclosure Bulletin, vol. 29, No. 11, Apr. 1987, pp. 4880-4881.
N. G. Koopman et al., Controlled Solder Dam Structure by Special Evaporation Gun Design , IBM Technical Disclosure Bulletin, vol. 29, No. 11, Apr. 1987, pp. 4880 4881. *
S. K. Kang et al., "Tape Structure for Controlled Solder Attachment", IBM Technical Disclosure Bulletin, vol. 33, No. 10A, Mar. 1991, pp. 38-39.
S. K. Kang et al., Tape Structure for Controlled Solder Attachment , IBM Technical Disclosure Bulletin, vol. 33, No. 10A, Mar. 1991, pp. 38 39. *

Cited By (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6295709B1 (en) 1995-11-30 2001-10-02 Micron Technology, Inc. Printed circuit board assembly and method for making a printed circuit board assembly
US6492598B1 (en) * 1995-11-30 2002-12-10 Micron Technology, Inc. Printed circuit board assembly and method for making a printed circuit board assembly
US6281450B1 (en) * 1997-06-26 2001-08-28 Hitachi Chemical Company, Ltd. Substrate for mounting semiconductor chips
US20040152232A1 (en) * 1998-11-05 2004-08-05 Arnold Richard W. Stud-cone bump for probe tips used in known good die carriers
US7122895B2 (en) * 1998-11-05 2006-10-17 Texas Instruments Incorporated Stud-cone bump for probe tips used in known good die carriers
DE19921936A1 (de) * 1999-05-12 2000-11-16 Valeo Schalter & Sensoren Gmbh Leiterplatte für insbesondere toleranzempfindliche Bauteile
US7546681B2 (en) 1999-10-12 2009-06-16 Tessera Interconnect Materials, Inc. Manufacturing method for wiring circuit substrate
US20070209199A1 (en) * 1999-10-12 2007-09-13 Tomoo Iijima Methods of making microelectronic assemblies
US6828221B2 (en) * 1999-10-12 2004-12-07 North Corporation Manufacturing method for wiring circuit substrates
US20030143833A1 (en) * 1999-10-12 2003-07-31 North Corporation Wiring circuit substrate and manufacturing method therefor
US7721422B2 (en) 1999-10-12 2010-05-25 Tessera Interconnect Materials, Inc. Methods of making microelectronic assemblies
US20040197962A1 (en) * 1999-10-12 2004-10-07 North Corporation Manufacturing method for wiring circuit substrate
US20060258139A1 (en) * 1999-10-12 2006-11-16 Tessera Interconnect Materials, Inc. Manufacturing method for wiring circuit substrate
US7096578B2 (en) 1999-10-12 2006-08-29 Tessera Interconnect Materials, Inc. Manufacturing method for wiring circuit substrate
US10388626B2 (en) * 2000-03-10 2019-08-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming flipchip interconnect structure
US20120241945A9 (en) * 2000-03-10 2012-09-27 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Flipchip Interconnect Structure
US8697490B2 (en) 2000-03-10 2014-04-15 Stats Chippac, Ltd. Flip chip interconnection structure
US20110074022A1 (en) * 2000-03-10 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Flipchip Interconnect Structure
US20040040742A1 (en) * 2002-09-02 2004-03-04 Murata Manufacturing Co. Ltd. Mounting board and electronic device using the same
US7005585B2 (en) * 2002-09-02 2006-02-28 Murata Manufacturing Co., Ltd. Mounting board and electronic device using same
US20050155790A1 (en) * 2002-09-02 2005-07-21 Murata Manufacturing Co., Ltd. Mounting board and electronic device using same
US9780057B2 (en) 2003-11-08 2017-10-03 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming pad layout for flipchip semiconductor die
US20110074047A1 (en) * 2003-11-08 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Pad Layout for Flipchip Semiconductor Die
US20090206493A1 (en) * 2003-11-08 2009-08-20 Stats Chippac, Ltd. Flip Chip Interconnection Pad Layout
US8129837B2 (en) 2003-11-08 2012-03-06 Stats Chippac, Ltd. Flip chip interconnection pad layout
USRE44431E1 (en) 2003-11-10 2013-08-13 Stats Chippac, Ltd. Bump-on-lead flip chip interconnection
US9922915B2 (en) 2003-11-10 2018-03-20 STATS ChipPAC Pte. Ltd. Bump-on-lead flip chip interconnection
US9064858B2 (en) 2003-11-10 2015-06-23 Stats Chippac, Ltd. Semiconductor device and method of forming bump-on-lead interconnection
US9029196B2 (en) 2003-11-10 2015-05-12 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
US9219045B2 (en) 2003-11-10 2015-12-22 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
USRE44377E1 (en) 2003-11-10 2013-07-16 Stats Chippac, Ltd. Bump-on-lead flip chip interconnection
USRE44355E1 (en) 2003-11-10 2013-07-09 Stats Chippac, Ltd. Method of forming a bump-on-lead flip chip interconnection having higher escape routing density
US9773685B2 (en) 2003-11-10 2017-09-26 STATS ChipPAC Pte. Ltd. Solder joint flip chip interconnection having relief structure
USRE44500E1 (en) 2003-11-10 2013-09-17 Stats Chippac, Ltd. Semiconductor device and method of forming composite bump-on-lead interconnection
USRE47600E1 (en) 2003-11-10 2019-09-10 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming electrical interconnect with stress relief void
US8810029B2 (en) 2003-11-10 2014-08-19 Stats Chippac, Ltd. Solder joint flip chip interconnection
US8759972B2 (en) 2003-11-10 2014-06-24 Stats Chippac, Ltd. Semiconductor device and method of forming composite bump-on-lead interconnection
USRE44524E1 (en) 2003-11-10 2013-10-08 Stats Chippac, Ltd. Bump-on-lead flip chip interconnection
US8558378B2 (en) 2003-11-10 2013-10-15 Stats Chippac, Ltd. Bump-on-lead flip chip interconnection
US20110074024A1 (en) * 2003-11-10 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Bump-on-Lead Interconnection
US9373573B2 (en) 2003-11-10 2016-06-21 STATS ChipPAC Pte. Ltd. Solder joint flip chip interconnection
US9385101B2 (en) 2003-11-10 2016-07-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming bump-on-lead interconnection
US9865556B2 (en) 2003-11-10 2018-01-09 STATS ChipPAC Pte Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
US20110084386A1 (en) * 2003-11-10 2011-04-14 Stats Chippac, Ltd. Semiconductor Device and Method of Self-Confinement of Conductive Bump Material During Reflow Without Solder Mask
US9379084B2 (en) 2003-11-10 2016-06-28 STATS ChipPAC Pte. Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
USRE44761E1 (en) 2003-11-10 2014-02-11 Stats Chippac, Ltd. Solder joint flip chip interconnection having relief structure
USRE44562E1 (en) 2003-11-10 2013-10-29 Stats Chippac, Ltd. Solder joint flip chip interconnection having relief structure
US20110215468A1 (en) * 2003-11-10 2011-09-08 Stats Chippac, Ltd. Bump-on-Lead Flip Chip Interconnection
US9899286B2 (en) 2003-11-10 2018-02-20 STATS ChipPAC Pte. Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
USRE44608E1 (en) 2003-11-10 2013-11-26 Stats Chippac, Ltd. Solder joint flip chip interconnection
US8574959B2 (en) 2003-11-10 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of forming bump-on-lead interconnection
US8188598B2 (en) 2003-11-10 2012-05-29 Stats Chippac, Ltd. Bump-on-lead flip chip interconnection
USRE44579E1 (en) 2003-11-10 2013-11-05 Stats Chippac, Ltd. Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
EP1581032A4 (en) * 2003-12-02 2009-10-21 Panasonic Corp ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1581032A1 (en) * 2003-12-02 2005-09-28 Matsushita Electric Industrial Co., Ltd. Electronic part and manufacturing method thereof
WO2005055683A1 (ja) 2003-12-02 2005-06-16 Matsushita Electric Industrial Co., Ltd. 電子部品およびその製造方法
US7902678B2 (en) * 2004-03-29 2011-03-08 Nec Corporation Semiconductor device and manufacturing method thereof
US20080251942A1 (en) * 2004-03-29 2008-10-16 Akira Ohuchi Semiconductor Device and Manufacturing Method Thereof
US8318537B2 (en) 2005-03-25 2012-11-27 Stats Chippac, Ltd. Flip chip interconnection having narrow interconnection sites on the substrate
US9159665B2 (en) 2005-03-25 2015-10-13 Stats Chippac, Ltd. Flip chip interconnection having narrow interconnection sites on the substrate
US20100193947A1 (en) * 2005-03-25 2010-08-05 Stats Chippac, Ltd. Flip Chip Interconnection Having Narrow Interconnection Sites on the Substrate
US8841779B2 (en) 2005-03-25 2014-09-23 Stats Chippac, Ltd. Semiconductor device and method of forming high routing density BOL BONL and BONP interconnect sites on substrate
US10580749B2 (en) 2005-03-25 2020-03-03 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming high routing density interconnect sites on substrate
US8278144B2 (en) 2005-05-16 2012-10-02 Stats Chippac, Ltd. Flip chip interconnect solder mask
US20110076809A1 (en) * 2005-05-16 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Narrow Interconnect Sites on Substrate with Elongated Mask Openings
US20090184419A1 (en) * 2005-05-16 2009-07-23 Stats Chippac, Ltd. Flip Chip Interconnect Solder Mask
US9545013B2 (en) 2005-05-16 2017-01-10 STATS ChipPAC Pte. Ltd. Flip chip interconnect solder mask
US9545014B2 (en) 2005-05-16 2017-01-10 STATS ChipPAC Pte. Ltd. Flip chip interconnect solder mask
US9258904B2 (en) 2005-05-16 2016-02-09 Stats Chippac, Ltd. Semiconductor device and method of forming narrow interconnect sites on substrate with elongated mask openings
US9847309B2 (en) 2006-09-22 2017-12-19 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate
US20100178735A1 (en) * 2006-09-22 2010-07-15 Stats Chippac, Inc. Fusible I/O Interconnection Systems and Methods for Flip-Chip Packaging Involving Substrate-Mounted Stud Bumps
US8525350B2 (en) 2006-09-22 2013-09-03 Stats Chippac, Ltd. Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps
US8193035B2 (en) 2006-09-22 2012-06-05 Stats Chippac, Ltd. Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps
US20100176510A1 (en) * 2006-09-22 2010-07-15 Stats Chippac, Inc. Fusible I/O Interconnection Systems and Methods for Flip-Chip Packaging Involving Substrate-Mounted Stud Bumps
US20100065966A1 (en) * 2006-12-14 2010-03-18 Stats Chippac, Ltd. Solder Joint Flip Chip Interconnection
US20100099222A1 (en) * 2006-12-14 2010-04-22 Stats Chippac, Ltd. Solder Joint Flip Chip Interconnection Having Relief Structure
US8216930B2 (en) 2006-12-14 2012-07-10 Stats Chippac, Ltd. Solder joint flip chip interconnection having relief structure
US8129841B2 (en) 2006-12-14 2012-03-06 Stats Chippac, Ltd. Solder joint flip chip interconnection
US20100027223A1 (en) * 2006-12-21 2010-02-04 Silicon Works Co., Ltd. Semiconductor integrated circuit having heat release pattern
US20110074026A1 (en) * 2008-03-19 2011-03-31 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Insulating Layer on Conductive Traces for Electrical Isolation in Fine Pitch Bonding
US20090236738A1 (en) * 2008-03-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Oxide Layer on Signal Traces for Electrical Isolation in Fine Pitch Bonding
US9418913B2 (en) 2008-03-19 2016-08-16 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding
US8349721B2 (en) 2008-03-19 2013-01-08 Stats Chippac, Ltd. Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding
US7851345B2 (en) 2008-03-19 2010-12-14 Stats Chippac, Ltd. Semiconductor device and method of forming oxide layer on signal traces for electrical isolation in fine pitch bonding
US9345148B2 (en) 2008-03-25 2016-05-17 Stats Chippac, Ltd. Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad
US9125332B2 (en) 2008-03-25 2015-09-01 Stats Chippac, Ltd. Filp chip interconnection structure with bump on partial pad and method thereof
US20100244245A1 (en) * 2008-03-25 2010-09-30 Stats Chippac, Ltd. Filp Chip Interconnection Structure with Bump on Partial Pad and Method Thereof
US20100007019A1 (en) * 2008-04-03 2010-01-14 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Composite Bump-on-Lead Interconnection
US8076232B2 (en) 2008-04-03 2011-12-13 Stats Chippac, Ltd. Semiconductor device and method of forming composite bump-on-lead interconnection
US20100117230A1 (en) * 2008-04-03 2010-05-13 Stats Chippac, Ltd. Flip Chip Interconnection Structure Having Void-Free Fine Pitch and Method Thereof
US8169071B2 (en) 2008-09-10 2012-05-01 Stats Chippac, Ltd. Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers
US8742566B2 (en) 2008-09-10 2014-06-03 Stats Chippac, Ltd. Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers
US8389398B2 (en) 2008-09-10 2013-03-05 Stats Chippac, Ltd. Method of forming vertically offset bond on trace interconnects on recessed and raised bond fingers
US20110121452A1 (en) * 2008-09-10 2011-05-26 Stats Chippac, Ltd. Semiconductor Device Having Vertically Offset Bond on Trace Interconnects on Recessed and Raised Bond Fingers
US20100128394A1 (en) * 2008-11-26 2010-05-27 Seagate Technology Llc Top bond pad bias and variation control
US8279558B2 (en) 2008-11-26 2012-10-02 Seagate Technology Llc Top bond pad bias and variation control
US8054584B2 (en) * 2008-11-26 2011-11-08 Seagate Technology Llc Top bond pad bias and variation control
US20110133334A1 (en) * 2008-12-31 2011-06-09 Stats Chippac, Ltd. Semiconductor Device and Method of Confining Conductive Bump Material with Solder Mask Patch
US8476761B2 (en) 2008-12-31 2013-07-02 Stats Chippac, Ltd. Semiconductor device and method of confining conductive bump material during reflow with solder mask patch
US8884430B2 (en) 2008-12-31 2014-11-11 Stats Chippac, Ltd. Semiconductor device and method of confining conductive bump material during reflow with solder mask patch
US8741766B2 (en) 2008-12-31 2014-06-03 Stats Chippac, Ltd. Semiconductor device and method of confining conductive bump material during reflow with solder mask patch
US8659172B2 (en) 2008-12-31 2014-02-25 Stats Chippac, Ltd. Semiconductor device and method of confining conductive bump material with solder mask patch
US8198186B2 (en) 2008-12-31 2012-06-12 Stats Chippac, Ltd. Semiconductor device and method of confining conductive bump material during reflow with solder mask patch
US20100164097A1 (en) * 2008-12-31 2010-07-01 Stats Chippac, Ltd. Semiconductor Device and Method of Confining Conductive Bump Material During Reflow with Solder Mask Patch
US9679811B2 (en) 2008-12-31 2017-06-13 STATS ChipPAC Pte. Ltd. Semiconductor device and method of confining conductive bump material with solder mask patch
US20100237500A1 (en) * 2009-03-20 2010-09-23 Stats Chippac, Ltd. Semiconductor Substrate and Method of Forming Conformal Solder Wet-Enhancement Layer on Bump-on-Lead Site
US8350384B2 (en) 2009-11-24 2013-01-08 Stats Chippac, Ltd. Semiconductor device and method of forming electrical interconnect with stress relief void
US20110121464A1 (en) * 2009-11-24 2011-05-26 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Electrical Interconnect with Stress Relief Void
US8563418B2 (en) 2010-03-09 2013-10-22 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset bond on trace interconnects on different height traces
US9236332B2 (en) 2010-06-24 2016-01-12 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe
US8409978B2 (en) 2010-06-24 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe
US8896133B2 (en) 2010-08-17 2014-11-25 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate
US8492197B2 (en) 2010-08-17 2013-07-23 Stats Chippac, Ltd. Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate
US8435834B2 (en) 2010-09-13 2013-05-07 Stats Chippac, Ltd. Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in FO-WLCSP
US9679824B2 (en) 2010-09-13 2017-06-13 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in Fo-WLCSP
US20140322868A1 (en) * 2012-11-14 2014-10-30 Qualcomm Incorporated Barrier layer on bump and non-wettable coating on trace
US10283484B2 (en) 2013-10-04 2019-05-07 Invensas Corporation Low cost substrates
US9365947B2 (en) 2013-10-04 2016-06-14 Invensas Corporation Method for preparing low cost substrates
US10706880B1 (en) 2019-04-02 2020-07-07 Seagate Technology Llc Electrically conductive solder non-wettable bond pads in head gimbal assemblies
US10964342B1 (en) 2019-04-02 2021-03-30 Seagate Technology Llc Methods of controlling a shape and size of solder joints of magnetic recording heads
WO2024055700A1 (zh) * 2022-09-16 2024-03-21 华为数字能源技术有限公司 塑封模块、塑封方法及电子设备

Also Published As

Publication number Publication date
JP3131379B2 (ja) 2001-01-31
US5798285A (en) 1998-08-25
JPH08330358A (ja) 1996-12-13

Similar Documents

Publication Publication Date Title
US5650595A (en) Electronic module with multiple solder dams in soldermask window
JP3320979B2 (ja) デバイスをデバイス・キャリヤ上に直接実装する方法
JP3262497B2 (ja) チップ実装回路カード構造
KR101286379B1 (ko) 범프-온-리드 플립 칩 인터커넥션
US6627824B1 (en) Support circuit with a tapered through-hole for a semiconductor chip assembly
US6594891B1 (en) Process for forming multi-layer electronic structures
US7102230B2 (en) Circuit carrier and fabrication method thereof
US7728429B2 (en) Semiconductor device having recessed connector portions
US6475833B2 (en) Bumpless flip chip assembly with strips and via-fill
US20130099376A1 (en) Microelectronic packages with dual or multiple-etched flip-chip connectors
US6143991A (en) Bump electrode with adjacent pad and insulation for solder flow stopping
US20090102062A1 (en) Wiring substrate and method of manufacturing the same, and semiconductor device
US6596620B2 (en) BGA substrate via structure
CN100534263C (zh) 电路板导电凸块结构及其制法
US6402970B1 (en) Method of making a support circuit for a semiconductor chip assembly
JP4051570B2 (ja) 半導体装置の製造方法
CN104124180A (zh) 芯片封装结构的制作方法
JP3658156B2 (ja) 実装体及びその製造方法
JP2000260895A (ja) テープパッケージとその製造方法
JP2002043466A (ja) ボールグリッドアレイパッケージ
JPH04356935A (ja) 半導体装置のバンプ電極形成方法
KR100196286B1 (ko) 반도체 금속 범프의 제조 방법
JP2001320155A (ja) プリント配線板のランド構造
JP2001284397A (ja) 半導体装置
JPH04323843A (ja) 回路部品搭載用中間基板の製造法

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BENTLAGE, MARK RUDOLF;FALLON, KENNETH MICHAEL;WHITE, LAWRENCE HAROLD;REEL/FRAME:007586/0923;SIGNING DATES FROM 19950712 TO 19950717

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20090722