US5454919A - Depositing different materials on a substrate - Google Patents

Depositing different materials on a substrate Download PDF

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Publication number
US5454919A
US5454919A US08/160,876 US16087693A US5454919A US 5454919 A US5454919 A US 5454919A US 16087693 A US16087693 A US 16087693A US 5454919 A US5454919 A US 5454919A
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United States
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region
substrate
deposited
controlling
depositing
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Expired - Fee Related
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US08/160,876
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English (en)
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Roger Hill
John Nuttall
Roger K. Tolfree
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Leonardo MW Ltd
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GEC Marconi Avionics Holdings Ltd
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Assigned to GEC-MARCONI AVIONICS HOLDINGS LIMITED reassignment GEC-MARCONI AVIONICS HOLDINGS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TOLFREE, ROGER KEITH, NUTTALL, JOHN, HILL, ROGER
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Assigned to BAE SYSTEMS AVIONICS LIMITED reassignment BAE SYSTEMS AVIONICS LIMITED CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: GEC-MARCONI AVIONICS (HOLDINGS) LIMITED
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0052—Bombardment of substrates by reactive ion beams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Definitions

  • This invention relates to depositing different materials on a substrate, for example, for the purpose of making quarter wave plate optical reflectors of high quality, such as are required in the manufacture of ring laser gyroscopes.
  • a disadvantage of previously proposed systems such as that described above is that, during the interval between the deposition of each layer, the substrate can become coated by contaminants. These may be removed using ions of low energy from a secondary ion gun but that adds to the complexity of the apparatus and of its operation.
  • This invention provides apparatus for depositing different materials onto a substrate comprising: means for moving the substrate between regions; means for depositing the different materials on the substrate in the respective regions; means for introducing a reactive substance into each region so as to expose the material as it is deposited in that region, to the reactive substance; and means for controlling the degree of such exposure in one region relative to the other to obtain desired stoichiometry in the deposited materials.
  • the deposited material can be exposed to the reactive substance in two ways.
  • the first is by controlling the atmosphere in the respective regions. Conveniently this control can be achieved by introducing a reactive gas into the region and by suitable arrangement of a vacuum device controlling the pressure of the reactive gas within the region.
  • a beam of reactive particles can be directed onto the material as it is being deposited.
  • the means for providing such a beam comprises an ion source and the reactive particles comprise oxygen atoms or ions.
  • the use of this method enables a greater deposition rate to be achieved since (i) a lower background pressure of reactive particles in the vicinity of the target can be maintained, thereby reducing the likelihood of the particles reacting with the target and (ii) the reactive particles being energetic will more readily react with the deposited material.
  • the chamber is preferably divided into the aforementioned different regions by one or more partitions. More than one partition would be required where more than two targets are used to deposit more than two different materials. Because of the very low pressures normally employed in this type of equipment, the regions do not need to be sealed from each other in the normal sense. A suitable vacuum pump connected to each region can effectively achieve a pressure differential between connected regions.
  • a beam of reactive particles is inventive itself and thus, according to a further aspect of the invention there is provided a method of depositing a material on a substrate comprising directing a beam of particles onto a target, thereby causing particles of target material to be emitted towards the substrate, and directing a beam of reactive particles onto the deposited material to react with the deposited material to obtain a desired stoichiometry.
  • the means for depositing conveniently takes the form of a separate ion beam source associated with each region and arranged so as to direct a beam of ions, preferably Argon ions, onto an associated target in that region. It may be desirable to neutralise the ions to prevent a build-up of charge on the targets and in this specification the term "ion" is to be interpreted as including such neutralised ions. There are, however, other arrangements which could be used.
  • a single ion beam is split between the regions such that, each part of the split-beam impinges on an associated target in the respective regions to dislodge from it particles which are subsequently deposited on the substrates.
  • the splitting of the beam can be achieved using a beam-dividing device carrying a charge the same as the charge carried by the ions forming the beam.
  • the means for splitting the beam can be a simple mechanical partition which can serve a secondary purpose of separating the two regions maintained at different pressures for the purpose previously explained.
  • the partition may be charged so as to repel ions of the beam and to assist division thereof.
  • the means for generating the ion beam may include a charge neutralising device so as to avoid the build-up of a charge on the target which would repel the ions. With a neutralised beam, electrostatic division of the beam would be impractical and other splitting means need be employed.
  • the means for moving the substrate between the regions is preferably in the form of a rotating carrier, the rotation of which carries the substrates from one region to another. It is convenient to employ individual substrate holders, mounted on the carrier and a facility may be provided to rotate, or otherwise move, each holder relative to the carrier in a way so as to ensure that the material deposited on the substrates is deposited in a uniform way.
  • a rotating movement of the carrier is not essential and in other embodiments of the invention it would be possible to arrange for some form of linear movement to move the substrates from one region to another.
  • the means for moving the substrate between regions preferably has the effect of moving the substrate relative to an enclosure forming part of the apparatus, but it may also be possible to move the "regions", e.g. by rotating or moving the partition.
  • One special benefit which can be derived by employing the invention is that, because it becomes so easy to deposit the different materials alternately, without the need for time-consuming change-over processes, a graded structure can be produced between layers by moving the substrate in a continuous or pulsed fashion between regions so as effectively to deposit a film of variable refractive index or of spatially changing refractive index under optimum conditions for the structure of each material.
  • the graded structure may consist of rapidly alternating layers. Alternatively, if the change-overs are effected very frequently, the particles of the target materials may be deposited as a mixture which is controlled so as to vary continuously between layers of the materials. Whilst this continuously varying refractive index structure is envisaged as being useful as an interface between layers of, for example, a quarter wave plate mirror, there may be other circumstances where it is useful to create a structure having a continuously varying refractive index.
  • the invention also provides a method of depositing different materials onto a substrate comprising: moving the substrate between regions; depositing different materials on the substrate in the respective regions; introducing a reactive substance into each region so as to expose the material as it is deposited in that region, to the reactive substance; and controlling the degree of such exposure in one region relative to the other to obtain desired stoichiometry in the deposited materials.
  • the invention also provides a device comprising different materials deposited according to a process as described in the immediately preceding paragraph.
  • FIG. 1 is a horizontal cross-section through an apparatus constructed in accordance with the invention for depositing alternate layers of two different materials on a substrate;
  • FIG. 1A is a schematic representation of the control system used to maintain the gaseous pressure within the two regions.
  • FIG. 2 is a vertical cross-section through the line I--I of FIG. 1;
  • FIG. 3 is a vertical cross-section through the line II--II of FIG. 1.
  • FIG. 4 is a horizontal cross-section through another apparatus constructed in accordance with the invention.
  • FIG. 5 is a schematic perspective view of another apparatus constructed in accordance with the invention with an outer enclosure thereof removed to reveal interior components.
  • FIG. 1 there is shown a chamber 1 formed of two parts, 1A and 1B.
  • the chamber 1 is divided by a partition 2 into two regions and associated with each region is an ion source 3.
  • Each ion source 3 is arranged so as to direct a beam of Argon ions, denoted 3A within the Figure and indicated as a broken line, in a manner which is well-known in the art, onto an associated target 4. Particles of the target material are dislodged by the Argon ions and are directed towards a carrier 5.
  • the carrier 5 is mounted in a shaft 6 arranged to be driven by a motor 7. It carries a number of holders 8, each designed to hold a substrate 9 on which the layers are to be deposited by incidence of sputtered particles of the target material onto them at high energy. Each holder 8 is connected to a small sprocket 10, the teeth of which engage corresponding teeth of a large toothed wheel 11 which is fixed in relation to the walls of the chamber 1. Rotation of the carrier 5 under the action of the motor 7 causes the holders 8 to move them from one region to the other and then back again in continuous fashion so as to deposit alternate layers of the respective target material. The rotation of the carrier 5 also causes, by virtue of the engagement of the large toothed wheel 11 with the sprockets 10, the holders 8 to rotate about their axes in a planetary fashion, as indicated in FIG. 2, ensuring uniform deposition of each layer.
  • the two regions of the chamber are maintained with a gaseous environment appropriate to obtaining the desired stoichiometry in the different layers.
  • SiO 2 is often used as the low refractive index material and TiO 2 as the high refractive index material.
  • targets of silicon and titanium are used respectively, with sputter-deposition taking place in the presence of an oxygen environment in which the partial pressure of the oxygen is carefully maintained.
  • oxygen O 2 or other reactive gas, is introduced through a gas inlet 12 into the respective regions.
  • each region also has an associated pump 13 and gas pressure sensor 14. It is advantageous to use a gas pressure sensor 14 that is specific to a given gas as there may be other gases present, in particular Argon, from the ion beam source 3.
  • the partial pressure of the gaseous environment within the regions can be maintained, in response to the sensors 14 using a controller 15 within a control system as indicated in FIG. 1A.
  • the pressure can be controlled by controller 15 in three ways: (i) by regulating the flow rate of the gas into the region through the inlet 12 by means of a valve 16, (ii) by regulating the pumping rate of pump 13, for example by throttling the pump inlet by means of an adjustable iris 17 or diaphragm and (iii) by a combination of the aforementioned techniques.
  • moveable shields 18 are included in the apparatus.
  • the moveable shield 18 is shown in a position to suppress deposition in the right-hand region and withdrawn to allow deposition within the left-hand region of chamber 1.
  • the areas enclosed by a broken line and denoted 18A in FIG. 3 indicate the other operating position of the shields 18.
  • the shields 18 can also be employed upon start-up of the apparatus, where it may be desirable to initially clean the targets 4 to remove contamination from their surfaces.
  • the deposition rate may be controlled by three means; the ion mean energy, the substrate velocity and through use of moveable shields 18. Such control ensures that it is easy to produce abrupt interfaces between layers, and hence an abrupt change of refractive index when this is required. In addition, it is also easy, when required, to produce graded refractive indices or a continuously varying refractive index between layers. For example, if a graded interface is required between layers of the materials A and B, the required thickness of material A is first deposited. Alternative layers of materials B and A are then deposited in which the thickness of layer A is progressively decreased and the thickness of layer B is progressively increased.
  • Such a graded refractive index can only be achieved with the present invention, since alternate layers can be readily and rapidly deposited under the optimum conditions for the structure of each material. If the thicknesses of the layers in the graded structure are reduced to a sufficient extent, they become indistinguishable as layers, the particles of the different materials being effectively mixed together to form an interface of continuously varying refractive index.
  • the ion source for the other target can be operated at a lower standby level, sufficient to maintain the target in a state of "readiness" without sputtering material from the target.
  • a second ion source 19 in each of the regions is arranged to direct a beam 19a of oxygen O 2 (or other reactive material) atoms or ions onto the substrates 9 to react with the material as it is deposited and achieve the desired stoichiometry.
  • O 2 oxygen
  • a greater sputtering deposition rate can be achieved by providing the oxygen in this manner for two reasons, (i) a lower background pressure of oxygen in the vicinity of the target 4 can be maintained, thereby reducing the likelihood of oxidising the target, whilst ensuring there is the required condition in the vicinity of the substrate, and (ii) the atoms of oxygen are energetic and will therefore more readily react with the deposited material.
  • the energy range of the oxygen ions can be easily controlled, precise control of the stoichiometry can be achieved.
  • the second ion source 19 is a radio frequency R.F. excited type as is known in the art. This type of source has a greater life expectancy, as compared to the Kaufman-type source, when it is used with reactive gases such as oxygen.
  • the second ion source 19 can also be conveniently used to clean the substrates prior to deposition by providing the source 19 with an inert gas such as argon.
  • background gas can be introduced through inlet 12 as previously described.
  • FIG. 5 This is essentially similar to the previous embodiment but has a partition 2A formed by two targets 4A, 4B which are arranged to diverge from an apex as shown. This apex is defined by an edge 20.
  • the edge 20 may be charged positively so as to assist splitting of a single beam 21 of Argon ions into two separate beams 21 A, 21B which impinge on respective targets 4A, 4B.
  • substrates one of which is designated by reference numeral 9A, am mounted around a cylindrical carrier 5A, which is rotated continuously so as to move the substrates between regions where the different target materials (or compounds thereof with oxygen or other gaseous material in the chamber, not shown) are deposited.
  • a suitable facility to rotate individual substrates on the carrier may be included as may shields having similar effect to those shown at 18 in FIGS. 1,3 and 4.
  • the illustrated embodiments of the invention have the advantage that the use of two or more regions in which respective materials are deposited enables a faster deposition rate without the need for time consuming change over processes which could result in contamination of the deposited material. Since there is only one target material within each region the targets can be fixed and target cooling is easy to achieve. It is also a simple matter to ensure that stray ions from the ion source 3 do not impinge on the uncleaned target material. Within each region a film thickness monitor which may be used to measure the thickness of the deposited material need only be calibrated for one material.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
US08/160,876 1992-12-03 1993-12-03 Depositing different materials on a substrate Expired - Fee Related US5454919A (en)

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GB929225270A GB9225270D0 (en) 1992-12-03 1992-12-03 Depositing different materials on a substrate
GB9225270 1992-12-03

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JP (1) JPH06220635A (fr)
CA (1) CA2110250C (fr)
CH (1) CH687464A5 (fr)
DE (1) DE4341173B4 (fr)
FR (1) FR2698884A1 (fr)
GB (1) GB9225270D0 (fr)

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US6172810B1 (en) 1999-02-26 2001-01-09 3M Innovative Properties Company Retroreflective articles having polymer multilayer reflective coatings
US6190511B1 (en) * 1997-03-13 2001-02-20 David T. Wei Method and apparatus for ion beam sputter deposition of thin films
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US6402900B1 (en) * 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube
US6503564B1 (en) 1999-02-26 2003-01-07 3M Innovative Properties Company Method of coating microstructured substrates with polymeric layer(s), allowing preservation of surface feature profile
US20030150382A1 (en) * 2002-02-08 2003-08-14 Han-Chung Lai Device for fabricating alignment layer
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US20040084299A1 (en) * 2002-10-31 2004-05-06 Slaughter Jon M. High throughput dual ion beam deposition apparatus
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
US20040173305A1 (en) * 2003-02-05 2004-09-09 Bridgestone Corporation Process for producing rubber-based composite material
FR2856677A1 (fr) * 2003-06-27 2004-12-31 Saint Gobain Substrat revetu d'une couche dielectrique et procede pour sa fabrication
US20050026454A1 (en) * 2001-03-13 2005-02-03 Nobuo Konishi Film forming method and film forming apparatus
US20060188660A1 (en) * 2002-09-26 2006-08-24 Dennis Teer Method for depositing multilayer coatings
US20070103761A1 (en) * 2003-07-09 2007-05-10 Saint-Gobain Glass France Electrically-controllable device with variable optical and/or energy properties
US20090050469A1 (en) * 2007-08-22 2009-02-26 International Business Machines Corporation Alignment film forming apparatus and methos
US20140090973A1 (en) * 2011-02-08 2014-04-03 Centre National De La Recherche Scientifique Device and method for ion beam sputtering
WO2016003400A1 (fr) 2014-06-30 2016-01-07 Halliburton Energy Services, Inc. Système et procédé permettant le dépôt d'éléments de calcul intégrés (ice) utilisant un étage de translation
WO2016003401A1 (fr) * 2014-06-30 2016-01-07 Halliburton Energy Services, Inc. Dépôt d'éléments de calcul intégrés (ice) au moyen d'une platine de translation
WO2017095731A3 (fr) * 2015-12-02 2017-07-27 Sabic Global Technologies B.V. Application de multiples couches de revêtement au plasma sous un vide continu

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GB9225270D0 (en) 1993-01-27
JPH06220635A (ja) 1994-08-09
CH687464A5 (fr) 1996-12-13
CA2110250C (fr) 2004-08-24
DE4341173B4 (de) 2004-03-04
CA2110250A1 (fr) 1994-06-04
FR2698884A1 (fr) 1994-06-10
DE4341173A1 (de) 1994-06-09

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