US3777365A - Circuit chips having beam leads attached by film strip process - Google Patents

Circuit chips having beam leads attached by film strip process Download PDF

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US3777365A
US3777365A US00232029A US3777365DA US3777365A US 3777365 A US3777365 A US 3777365A US 00232029 A US00232029 A US 00232029A US 3777365D A US3777365D A US 3777365DA US 3777365 A US3777365 A US 3777365A
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chip
leads
lead
contact pads
carrier
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Umbaugh C Wayne
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Bull HN Information Systems Italia SpA
Bull HN Information Systems Inc
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Honeywell Information Systems Italia SpA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79—Apparatus for Tape Automated Bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Definitions

  • the HIC is generally a microminiature package structure comprised of interconnecting conductors andpassive components formed on a substrate such as alumina, and active components such as semiconductor integrated circuits joined to the conductors.
  • the term passive component includes not only components formed by deposition on the substrate, but monolithic and discrete devices as well. The latter named devices may be joined to the substrate conductors.
  • One prior art method of chip joining first bonds the back side of the chips or dice to the substrate and then makes the necessary chip to conductor connections by flying-wire bonds.
  • the technique of thermocompression or ultrasonic bonding of individual wires has been successful in achieving a reduction in size and weight of package structures, but with attendant problems and disadvantages.
  • Each wire must be aligned before the bond is made. After bonding, wire sag may cause shorting of wires to each other or to other components of the structure.
  • the skill level of the assemblers must be high. Furthermore, the cumulative step technique offers no ability to functionally test the assembly until essentially all of the connections are made.
  • Analternate prior art method of chip joining is the well known flip-chip technique.
  • the technique involves the formation of pillars or bumps on the IC chip and/or the interconnecting conductors, and the subsequent face-down joining of the chip to the conductors. Facedown bonding must be accomplished with the bonding areas hidden from view, consequently, registration vor alignment problems may occur. Moreover, the only path offered for thermal conduction is through the bonded interconnections.
  • Beam leads are generally defined in the art as metallization projecting from a microminiature device such as a semiconductor integrated circuit and connecting the circuit elements of the device to metallized circuit patterns or other types of substrates by abonding process. Further, beam leads are generally self-supporting projections built up on the active face of the device by an elect roforming process. The beam-leaded chips are joined to the substrate with their active face down.
  • Heat dissipation from a rigidly mounted beam-lead chip is similar to that of the flip-chip device. Both are junction-isolated devices.
  • the invention provides an improved microminiature circuit device having beam leads.
  • a preferred embodiment describes a method for transforming any integrated circuit chip having conventional contact pad geometry and metallurgy, as those intended for flyingwire or flip-chip interconnection, into a beam-leaded chip.
  • Variable lead geometries may be affixed if desired.
  • the leads may be rigid or flexible to permit standard beam-lead device attachment or die bonding to a substrate.
  • the process utilizes an indexed flexible filmstrip carrier having metal film laminated thereto. Elongated beam leads are etched from the metal film and subsequently joined to chips aligned beneath the lead ends. The leads are then severed from the strip carrier either prior to or during attachment of the beam-leaded device to an external circuit.
  • FIG. 1 is a cutaway perspective view of the carrier
  • FIG. 2 is a section of FIG. 1 taken along lines 2-2;
  • FIGS. 3 and 8 are perspective views of an integrated circuit chip, respectively, before and after attachment of the beam leads;
  • FIG. '4 is a flow diagram of the process.
  • FIGS. 5-7 illustrate various successive steps of the process of my invention.
  • FIGS. 1 and 2 show a carrier or substrate 10 of flexible organic film having indexing apertures 12 and circuit apertures 14 formed therein.
  • a thin strip of metallic foil 16 is laminated to a surface 18 of the film substrate 10.
  • the metallic foil 16 may be any material suitable for the formation by etching of interconnecting leads, as for example, copper, nickel or gold.
  • the metallic foil 16 may typically be one-half ounce per square foot electroformed copper having a thickness of approximately 18 microns.
  • the substrate 10 may be a flexible organic film material such as Kapton having a thickness from one-half to 3 mils or greater.
  • the metallic foil I6 may be laminated to the film of the substrate 10 with or without an adhesive.
  • MlCRO-CLAD One such flexible laminate material, called MlCRO-CLAD, is manufactured and sold by the Fortin Laminating Corp., San Fernando, Calif.
  • the apertures. 12 and 14 in the substrate 10 may be formed by punching prior to laminating the foil, or by photochemical etching after the foil 16 is laminated to the film 10.
  • FIG. 3 illustrates an integrated circuit chip 20 having a plurality of contact pads 22 around the periphery of the chip.
  • the contact pads 22 provide terminal means for connecting the electronic circuit elements or devices (not shown) formed in the active region 24 of the chip- 20'to external circuits.
  • the integrated circuit chip 20 of FIG. 3 is intended to illustrate only one of a wide variety of electronic circuit devices to which leads may be attached. Other devices, both active and passive, such as resistors, capacitors, diodes, transistors, and complex integrated circuits may be beam leaded in accordance with my invention.
  • Circuit devices are commonly available in, the form of a wafer comprising a plurality of individual devices of like kind. Most commonly available IC chips have aluminum pad metallization. The chips may be obtained either as individual chips or in wafer form. The wafers are coated with a thin (about I micron thick) insulating layer such as glass, quartz or silicon dioxide. The insulating layer is etched to expose the underlying metal at the-contact pad 22 locations. One or more thin layers of metal may be added to yield the raised contact pads 22, however, it is understood that raised pads are not required. The last metal added to the contact pad locations is one with which the metal or metal system of the leads to be attached to the contact pads 22 must be metallurgically compatible. Wafer manufacturers employ various processes to form the contact pads 22 on the individual devices 20.
  • beam lead is defined herein as a metallized lead structure having a lateral cross section generally rectangular inshape, the lateral cross sectional dimensions and area being substantially consistent the length of the lead.
  • Thelong'itudinal shape of the beam lead may be rectangular (as in FIG. 8) or may include a lateral jog in order to achieve variable lead geometries.
  • the tenn beam lead is not intended to include fan-out structures, either supported or unsupported, Le, a lead having cross sectional dimensions and/or area which increaseas the distance from the chip end of the lead increases.
  • the metal foil 16 (FIG. 1) is photoetched using techniques well known in the art to form elongated leads or fingers 26.
  • Each of the elongated leads26 is supported by the carrier or substrate 10.
  • An end 28 of each of the elongated leads 26 extends outwardly from the surface 18 of the substrate beyond an edge 30 of and over one of the circuit apertures 14.
  • the elongated leads 26 may be formed individually as shown in the left portion of FIG. 5.
  • the individual leads may be tinned or otherwise coated by electroless plating with a metal or alloy metallurgically compatible with the metal of the pads 22 (FIG. 3).
  • the leads 26 may be interconnected by a grid 32, formed during the etching step of a portion of the metal foil 16, in order to provide a common conductive path for electroplating the leads.
  • FIG. 6 illustrates the step of positioning-of the chip 20 within the periphery 30 of the circuit-aperture 14.
  • the contact pads 22 are aligned beneath the lead ends well known means available in the industry such as a micropositionable X-Y support table. Registration of 6 v 28.
  • the alignment may be flCCOlTlPIlSl'IBd by anyof the the lead ends 28 is maintained by the indexing apertures 12 of the carrier strip 10 (FIG. 1).
  • FIG. 7 illustrates a representative chip to beam lead joining operation, performed after the alignment operation of FIG. 6.
  • the chip 20 may be held in place on a support plate 36 by any suitable means such as meltable wax or a vacuum orifice (not shown) in the plate 36.
  • the plate 36 supports the chip 20, as a bonding tool 38, shown here as a thermocompression bonding tip, supplies the necessary force and/or heat parameters simultaneously to all the bonding sites to effect the joining of the lead ends 28 to the contact-pads 22 of the chip. It is'understood that other joining techniques such as ultrasonic bonding, laser welding, or solder reflow may be employed.
  • the lead ends 28 are severed, as for example, by cutting, at a point indicated in FIG. 7 by the arrows 40.
  • the point of separation 40 is preferably a distance of 125 microns or more from the edge 42 of the chip 20, in order to provide sufficient lead structure for connecting the integrated circuit chip to a circuit assembly. Severing the lead ends 28 frees the circuit device and the leads attached thereto from the carrier 10 to form a beam leaded circuit device as illustrated in FIG. 8.
  • the beam leads formed in the-manner described are typically microns wide on 200 micron centers, and 14 microns thick.- The beam-lead lengths may range from microns to 900 microns or more, depending on the type of external connection technique.
  • the beam lead widths may range from 50 microns on 150 micron centers to microns on 300 micron centers.
  • the thickness of the beam leads may correspondingly vary from 13 to 40 microns.
  • the method as described in claim 1 which includes leaded chip from the carrier. 5 after the etching step, the step of: 2.
  • the method as described in claim 1, wherein the plating the ends of the leads with a metal system comp'ositioning step comprises the steps of: patible with the metallurgy of the contact pads.

Abstract

Circuit chip devices having beam leads are manufactured by first attaching leads formed on a film strip carrier to the chip, and then severing the lead ends to free the beam leaded chip from the carrier.

Description

5 Unite States Patent [1 1 [111 3,777,365 Umhaugli Dec. 11, 1973 [54] CIRCUIT CHIPS HAVING BEAM LEADS 3,390,308 6/1968 Marley 29/576 S ATTACHED Y FILM STRIP PROCESS 3,673,016 6/1972 Gerstner..... 29/583 3,689,991 9/1972 Aird 29/589 [75] Inventor: Charles Wayne Umbaugh, Phoenix,
Ariz.
[73] Assignee: Honeywell Information Systems, Primary Examiner-Charles Lanham Inc. waltham Mas5 Assistant Examiner-W. Tupman Att0rneyEdward W. Hughes et a1. [22] Filed: Mar. 6, 1972 [21] Appl. No.: 232,029
52 U.S. Cl. 29/591 [57] ABSTRACT [51] Int. Cl B0lj 17/00 [58] Field of Search 29/576 S, 591, 589, C u p d vi s ha ing beam l ads are manufac- 29/530, 583 tured by first attaching leads formed on a film strip carrier to the chip, and then severing the lead ends to [56] References Cited free the beam leaded chip from the carrier.
UNITED STATES PATENTS 3,271,625 9/1966 Caracciolo 29/576 S 3 Claims, 8 Drawing Figures PATENTEDDEC 1 1 ms um, m /4 I w NJO ETCH BEAM LEAD ERN OF BEAM LEADS PLATE ENDS POsm CIRCUIT CHIP IN APERTURE JOIN LEAD ENDS TO CONTACT PADS SEPARATE BEAM LEADED CHIP RoM CARRIER BACKGROUND OF THE INVENTION This invention relates to improvements in circuit chip devices. More particularly, the invention relates to microminiature electronic devices having beam leads for connecting the devices to external circuit elements, and a method for attaching the beam leads to the devices. A
One of the most common elements used for manufacturing modern electronic systems is the hybrid interconnect circuit (HIC). The HIC is generally a microminiature package structure comprised of interconnecting conductors andpassive components formed on a substrate such as alumina, and active components such as semiconductor integrated circuits joined to the conductors. The term passive component includes not only components formed by deposition on the substrate, but monolithic and discrete devices as well. The latter named devices may be joined to the substrate conductors.
One prior art method of chip joining first bonds the back side of the chips or dice to the substrate and then makes the necessary chip to conductor connections by flying-wire bonds. The technique of thermocompression or ultrasonic bonding of individual wires has been successful in achieving a reduction in size and weight of package structures, but with attendant problems and disadvantages. Each wire must be aligned before the bond is made. After bonding, wire sag may cause shorting of wires to each other or to other components of the structure. Because of the complexity of the individual, cumulative tasks and the complexity of the production equipment used to perform the tasks, the skill level of the assemblers must be high. Furthermore, the cumulative step technique offers no ability to functionally test the assembly until essentially all of the connections are made.
Analternate prior art method of chip joining is the well known flip-chip technique. The technique involves the formation of pillars or bumps on the IC chip and/or the interconnecting conductors, and the subsequent face-down joining of the chip to the conductors. Facedown bonding must be accomplished with the bonding areas hidden from view, consequently, registration vor alignment problems may occur. Moreover, the only path offered for thermal conduction is through the bonded interconnections.
Still another prior art method of chip joining utilizes purchased beam leaded devices. In recent years, beam lead technology has been the basis of most developmental efforts in the industry. Beam leads are generally defined in the art as metallization projecting from a microminiature device such as a semiconductor integrated circuit and connecting the circuit elements of the device to metallized circuit patterns or other types of substrates by abonding process. Further, beam leads are generally self-supporting projections built up on the active face of the device by an elect roforming process. The beam-leaded chips are joined to the substrate with their active face down.
A major consideration with beam leads is the relatively high cost per device due to the additional process steps. Prior art beam leads can be formed only by the vendor during the wafer manufacturing process. Furthermore, each chip type may have but one lead geometry. Availability is thus limited in both volume and variety.
Heat dissipation from a rigidly mounted beam-lead chip is similar to that of the flip-chip device. Both are junction-isolated devices.
SUMMARY OF THE INVENTION The invention provides an improved microminiature circuit device having beam leads. A preferred embodiment describes a method for transforming any integrated circuit chip having conventional contact pad geometry and metallurgy, as those intended for flyingwire or flip-chip interconnection, into a beam-leaded chip. Variable lead geometries may be affixed if desired. The leads may be rigid or flexible to permit standard beam-lead device attachment or die bonding to a substrate. The process utilizes an indexed flexible filmstrip carrier having metal film laminated thereto. Elongated beam leads are etched from the metal film and subsequently joined to chips aligned beneath the lead ends. The leads are then severed from the strip carrier either prior to or during attachment of the beam-leaded device to an external circuit.
BRIEF DESCRIPTION OF THE DRAWING The invention is pointed out with particularity in the appended claims, however, other features of the invention will become more apparent and the invention will be best understood by referring to the following detailed description in conjunction with the accompanying drawings in which:
FIG. 1 is a cutaway perspective view of the carrier;
FIG. 2 is a section of FIG. 1 taken along lines 2-2;
' FIGS. 3 and 8 are perspective views of an integrated circuit chip, respectively, before and after attachment of the beam leads;
FIG. '4 is a flow diagram of the process; and
FIGS. 5-7 illustrate various successive steps of the process of my invention.
DETAILED DESCRIPTION OF THE INVENTION FIGS. 1 and 2 show a carrier or substrate 10 of flexible organic film having indexing apertures 12 and circuit apertures 14 formed therein. A thin strip of metallic foil 16 is laminated to a surface 18 of the film substrate 10. The metallic foil 16 may be any material suitable for the formation by etching of interconnecting leads, as for example, copper, nickel or gold. The metallic foil 16 may typically be one-half ounce per square foot electroformed copper having a thickness of approximately 18 microns. The substrate 10 may be a flexible organic film material such as Kapton having a thickness from one-half to 3 mils or greater. The metallic foil I6 may be laminated to the film of the substrate 10 with or without an adhesive. One such flexible laminate material, called MlCRO-CLAD, is manufactured and sold by the Fortin Laminating Corp., San Fernando, Calif. The apertures. 12 and 14 in the substrate 10 may be formed by punching prior to laminating the foil, or by photochemical etching after the foil 16 is laminated to the film 10.
FIG. 3 illustrates an integrated circuit chip 20 having a plurality of contact pads 22 around the periphery of the chip. The contact pads 22 provide terminal means for connecting the electronic circuit elements or devices (not shown) formed in the active region 24 of the chip- 20'to external circuits. The integrated circuit chip 20 of FIG. 3 is intended to illustrate only one of a wide variety of electronic circuit devices to which leads may be attached. Other devices, both active and passive, such as resistors, capacitors, diodes, transistors, and complex integrated circuits may be beam leaded in accordance with my invention.
Circuit devices are commonly available in, the form of a wafer comprising a plurality of individual devices of like kind. Most commonly available IC chips have aluminum pad metallization. The chips may be obtained either as individual chips or in wafer form. The wafers are coated with a thin (about I micron thick) insulating layer such as glass, quartz or silicon dioxide. The insulating layer is etched to expose the underlying metal at the-contact pad 22 locations. One or more thin layers of metal may be added to yield the raised contact pads 22, however, it is understood that raised pads are not required. The last metal added to the contact pad locations is one with which the metal or metal system of the leads to be attached to the contact pads 22 must be metallurgically compatible. Wafer manufacturers employ various processes to form the contact pads 22 on the individual devices 20. These processes form no part of my invention. Indeed, flexibility of the design of a system packaging structure is enhanced by my invention because the constraints of chip configurations imposed by special processing of the wafer by the manufacturer such as the addition thereto of beam leads, bumps, etc., do not limit the system designers choice of device suppliers. Additionally, there is an attendant lower device cost.
Referring now to FIG. 4 in conjunction with FIGS. 5-7, the method for attaching a beam lead to an integrated circuit chip will now be described.
The term beam lead is defined herein as a metallized lead structure having a lateral cross section generally rectangular inshape, the lateral cross sectional dimensions and area being substantially consistent the length of the lead. Thelong'itudinal shape of the beam lead may be rectangular (as in FIG. 8) or may include a lateral jog in order to achieve variable lead geometries. The tenn beam lead is not intended to include fan-out structures, either supported or unsupported, Le, a lead having cross sectional dimensions and/or area which increaseas the distance from the chip end of the lead increases. As shown in FIG. 5, the metal foil 16 (FIG. 1) is photoetched using techniques well known in the art to form elongated leads or fingers 26. Each of the elongated leads26 is supported by the carrier or substrate 10. An end 28 of each of the elongated leads 26 extends outwardly from the surface 18 of the substrate beyond an edge 30 of and over one of the circuit apertures 14. The elongated leads 26 may be formed individually as shown in the left portion of FIG. 5. The individual leads may be tinned or otherwise coated by electroless plating with a metal or alloy metallurgically compatible with the metal of the pads 22 (FIG. 3). Alternatively, the leads 26 may be interconnected by a grid 32, formed during the etching step of a portion of the metal foil 16, in order to provide a common conductive path for electroplating the leads.
FIG. 6 illustrates the step of positioning-of the chip 20 within the periphery 30 of the circuit-aperture 14. The contact pads 22 are aligned beneath the lead ends well known means available in the industry such as a micropositionable X-Y support table. Registration of 6 v 28. The alignment may be flCCOlTlPIlSl'IBd by anyof the the lead ends 28 is maintained by the indexing apertures 12 of the carrier strip 10 (FIG. 1).
FIG. 7 illustrates a representative chip to beam lead joining operation, performed after the alignment operation of FIG. 6. The chip 20 may be held in place on a support plate 36 by any suitable means such as meltable wax or a vacuum orifice (not shown) in the plate 36. The plate 36 supports the chip 20, as a bonding tool 38, shown here as a thermocompression bonding tip, supplies the necessary force and/or heat parameters simultaneously to all the bonding sites to effect the joining of the lead ends 28 to the contact-pads 22 of the chip. It is'understood that other joining techniques such as ultrasonic bonding, laser welding, or solder reflow may be employed.
Subsequent to the bonding operation, the lead ends 28 are severed, as for example, by cutting, at a point indicated in FIG. 7 by the arrows 40. The point of separation 40 is preferably a distance of 125 microns or more from the edge 42 of the chip 20, in order to provide sufficient lead structure for connecting the integrated circuit chip to a circuit assembly. Severing the lead ends 28 frees the circuit device and the leads attached thereto from the carrier 10 to form a beam leaded circuit device as illustrated in FIG. 8. The beam leads formed in the-manner described are typically microns wide on 200 micron centers, and 14 microns thick.- The beam-lead lengths may range from microns to 900 microns or more, depending on the type of external connection technique. The self-supporting, shorter length leads are utilized for the face-down configuration; the longer length for the die-bond-tosubstrate technique. Depending upon the device to which the beam leads are attached in accordance with my invention, the beam lead widths may range from 50 microns on 150 micron centers to microns on 300 micron centers. The thickness of the beam leads may correspondingly vary from 13 to 40 microns.
A representative embodiment illustrative of my invention has been shown and described. Different arrangements incorporating the principles of the invention may be used. For example, the beam leads may be attached at their alternate ends to different chips to form an air-isolated integrated circuit. It is therefore understood that my invention may be practiced otherwise than as specifically described and it is intended by the appended claims to cover all such modifications which fall within the true spirit and scope of the invention.
I claim: I
1. In a process utilizing metallic film laminated to a flexible strip carrier for manufacturing integrated circuit assemblies, an improved method for producing a beam-leaded chip from a device having contact pads of conventional geometry and metallurgy, the improvement comprising the steps of:
etching the metal film to yield a predetermined pattern of elongated leads, each of the leads supported by the carrier, ends of the leads extending over an aperture formed in thecarrier, each of the extended lead ends having a lateral cross-sectional area substantially consistent the length of the lead end;
positioning a chip within the periphery of the circuit aperture;
joining the ends of the leads to the-contact pads of the positioned chip;
6 severing the joined lead ends at a point at least 125 substantially coplanar with the lead ends; and
microns from the edge of the chip, the severed lead aligning the contact pads of the circuit chip with corends forming beam leads and responding ends of the elongated leads. removing without additional insulating the beam- 3. The method as described in claim 1 which includes leaded chip from the carrier. 5 after the etching step, the step of: 2. The method as described in claim 1, wherein the plating the ends of the leads with a metal system comp'ositioning step comprises the steps of: patible with the metallurgy of the contact pads.
supporting the circuit chip to make the contact pads

Claims (3)

1. In a process utilizing metallic film laminated to a flexible strip carrier for manufacturing integrated circuit assemblies, an improved method for producing a beam-leaded chip from a device having contact pads of conventional geometry and metallurgy, the improvement comprising the steps of: etching the metal film to yield a predetermined pattern of elongated leads, each of the leads supported by the carrier, ends of the leads extending over an aperture formed in the carrier, each of the extended lead ends having a lateral crosssectional area substantially consistent the length of the lead end; positioning a chip within the periphery of the circuit aperture; joining the ends of the leads to the contact pads of the positioned chip; severing the joined lead ends at a point at least 125 microns from the edge of the chip, the severed lead ends forming beam leads and removing without additional insulating the beam-leaded chip from the carrier.
2. The method as described in claim 1, wherein the positioning step comprises the steps of: supporting the circuit chip to make the contact pads substantially coplanar with the lead ends; and aligning the contact pads of the circuit chip with corresponding ends of the elongated leads.
3. The method as described in claim 1 which includes after the etching step, the step of: plating the ends of the leads with a metal system compatible with the metallurgy of the contact pads.
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US3961413A (en) * 1973-01-02 1976-06-08 Texas Instruments Incorporated Method and apparatus for the assembly of semiconductor devices
FR2313772A1 (en) * 1975-06-02 1976-12-31 Nat Semiconductor Corp ANTIOXIDIZING COATING FOR COPPER ELEMENTS FOR THE THERMOCOMPRESSION ASSEMBLY CONNECTION OF SEMICONDUCTOR DEVICES
FR2313771A1 (en) * 1975-06-02 1976-12-31 Nat Semiconductor Corp ASSEMBLY LINK BY COPPER-ON-GOLD THERMOCOMPRESSION OF INTERCONNECTION CONDUCTORS WITH SEMICONDUCTOR DEVICES
FR2315770A1 (en) * 1975-06-24 1977-01-21 Siemens Ag ELECTRICALLY CONDUCTIVE TAPE
FR2332620A1 (en) * 1975-11-18 1977-06-17 Amp Inc SEMICONDUCTOR COMPONENT CONNECTION FRAME
DE2725260A1 (en) * 1977-06-03 1978-12-14 Nippon Electric Co Frame and conductor system for semiconductor component prodn. - has conductor strip holder with frame whose inner edge surrounds semiconductor receptacle
US4411719A (en) * 1980-02-07 1983-10-25 Westinghouse Electric Corp. Apparatus and method for tape bonding and testing of integrated circuit chips
WO1985004517A1 (en) * 1984-03-22 1985-10-10 Mostek Corporation Automatic assembly of integrated circuits
EP0170724A1 (en) * 1984-03-15 1986-02-12 Siemens Aktiengesellschaft Optoelectronic semiconductor device and method for its production
US4763409A (en) * 1985-08-23 1988-08-16 Nec Corporation Method of manufacturing semiconductor device
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US5008868A (en) * 1987-03-05 1991-04-16 Seiko Epson Corporation Structure for mounting an integrated circuit
US5256598A (en) * 1992-04-15 1993-10-26 Micron Technology, Inc. Shrink accommodating lead frame
US5333375A (en) * 1993-09-16 1994-08-02 Die Tech, Inc. Substrate lead strip mounting machine and method
US5369627A (en) * 1987-07-21 1994-11-29 Seiko Epson Corporation Improvements in bearing and frame structure of a timepiece
US5416752A (en) * 1987-07-21 1995-05-16 Seiko Epson Corporation Timepiece
US5874319A (en) * 1996-05-21 1999-02-23 Honeywell Inc. Vacuum die bond for known good die assembly
US5994222A (en) * 1996-06-24 1999-11-30 Tessera, Inc Method of making chip mountings and assemblies
US7212088B1 (en) * 1998-01-26 2007-05-01 Intel Corporation Electrical connecting element and a method of making such an element

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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961413A (en) * 1973-01-02 1976-06-08 Texas Instruments Incorporated Method and apparatus for the assembly of semiconductor devices
FR2313772A1 (en) * 1975-06-02 1976-12-31 Nat Semiconductor Corp ANTIOXIDIZING COATING FOR COPPER ELEMENTS FOR THE THERMOCOMPRESSION ASSEMBLY CONNECTION OF SEMICONDUCTOR DEVICES
FR2313771A1 (en) * 1975-06-02 1976-12-31 Nat Semiconductor Corp ASSEMBLY LINK BY COPPER-ON-GOLD THERMOCOMPRESSION OF INTERCONNECTION CONDUCTORS WITH SEMICONDUCTOR DEVICES
FR2315770A1 (en) * 1975-06-24 1977-01-21 Siemens Ag ELECTRICALLY CONDUCTIVE TAPE
FR2332620A1 (en) * 1975-11-18 1977-06-17 Amp Inc SEMICONDUCTOR COMPONENT CONNECTION FRAME
DE2760435C2 (en) * 1977-06-03 1989-01-26 Nec Corp., Tokio/Tokyo, Jp
DE2725260A1 (en) * 1977-06-03 1978-12-14 Nippon Electric Co Frame and conductor system for semiconductor component prodn. - has conductor strip holder with frame whose inner edge surrounds semiconductor receptacle
US4411719A (en) * 1980-02-07 1983-10-25 Westinghouse Electric Corp. Apparatus and method for tape bonding and testing of integrated circuit chips
EP0170724A1 (en) * 1984-03-15 1986-02-12 Siemens Aktiengesellschaft Optoelectronic semiconductor device and method for its production
WO1985004517A1 (en) * 1984-03-22 1985-10-10 Mostek Corporation Automatic assembly of integrated circuits
US4627151A (en) * 1984-03-22 1986-12-09 Thomson Components-Mostek Corporation Automatic assembly of integrated circuits
US4763409A (en) * 1985-08-23 1988-08-16 Nec Corporation Method of manufacturing semiconductor device
US5008868A (en) * 1987-03-05 1991-04-16 Seiko Epson Corporation Structure for mounting an integrated circuit
US5369627A (en) * 1987-07-21 1994-11-29 Seiko Epson Corporation Improvements in bearing and frame structure of a timepiece
US5416752A (en) * 1987-07-21 1995-05-16 Seiko Epson Corporation Timepiece
US5712831A (en) * 1987-07-21 1998-01-27 Seiko Epson Corporation Timepiece
US5256598A (en) * 1992-04-15 1993-10-26 Micron Technology, Inc. Shrink accommodating lead frame
US5333375A (en) * 1993-09-16 1994-08-02 Die Tech, Inc. Substrate lead strip mounting machine and method
US5874319A (en) * 1996-05-21 1999-02-23 Honeywell Inc. Vacuum die bond for known good die assembly
US5994222A (en) * 1996-06-24 1999-11-30 Tessera, Inc Method of making chip mountings and assemblies
US7212088B1 (en) * 1998-01-26 2007-05-01 Intel Corporation Electrical connecting element and a method of making such an element

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