US20110174213A1 - Vapor Phase Epitaxy System - Google Patents
Vapor Phase Epitaxy System Download PDFInfo
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- US20110174213A1 US20110174213A1 US13/121,371 US200913121371A US2011174213A1 US 20110174213 A1 US20110174213 A1 US 20110174213A1 US 200913121371 A US200913121371 A US 200913121371A US 2011174213 A1 US2011174213 A1 US 2011174213A1
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- precursor
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- platen
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- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 77
- 239000002243 precursor Substances 0.000 claims abstract description 169
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 230000003213 activating effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 283
- 238000000034 method Methods 0.000 claims description 62
- 230000003197 catalytic effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 40
- 238000006243 chemical reaction Methods 0.000 description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 21
- 239000000126 substance Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 239000012159 carrier gas Substances 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 11
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 11
- 239000000376 reactant Substances 0.000 description 11
- 150000004678 hydrides Chemical class 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 150000004820 halides Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000006555 catalytic reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- -1 NH3 Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 238000003947 neutron activation analysis Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
Definitions
- Vapor phase epitaxy is a type of chemical vapor deposition (CVD) which involves directing one or more gases containing chemical species onto a surface of a substrate so that the reactive species react and form a film on the surface of the substrate.
- VPE can be used to grow compound semiconductor material on a substrate.
- the substrate is typically a crystalline material in the form of a disc, which is commonly referred to as a “wafer.”
- Materials are typically grown by injecting at least a first and a second precursor gas into a process chamber containing the crystalline substrate.
- MOVPE Metalorganic vapor phase epitaxy
- MOCVD metalorganic chemical vapor deposition
- OMCVD organometallic chemical vapor deposition
- the gases are reacted with one another at the surface of a substrate, such as a sapphire, Si, GaAs, InP, InAs or GaP substrate, to form a III-V compound of the general formula In X Ga Y Al Z N A As B P C Sb D , where X+Y+Z equals approximately one, and A+B+C+D equals approximately one, and each of X, Y, Z, A, B, C, and D can be between zero and one.
- bismuth may be used in place of some or all of the other Group III metals.
- Compound semiconductors can also be formed by growing various layers of semiconductor materials on a substrate using a hydride or a halide precursor gas process.
- a hydride or a halide precursor gas process In one halide vapor phase epitaxy (HYPE) process, Group III nitrides (e.g., GaN, AlN) are formed by reacting hot gaseous metal chlorides (e.g., GaCl or AlCl) with ammonia gas (NH 3 ). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.
- HYPE halide vapor phase epitaxy
- One feature of HYPE is that it can have a very high growth rate, up to 100 ⁇ m per hour for some state-of-the-art processes.
- Another feature of HYPE is that it can be used to deposit relatively high quality films because films are grown in a carbon free environment and because the hot HCl gas provides a self-cleaning
- the substrate is maintained at an elevated temperature within a reaction chamber.
- the precursor gases are typically mixed with inert carrier gases and are then directed into the reaction chamber.
- the gases are at a relatively low temperature when they are introduced into the reaction chamber.
- the gases reach the hot substrate, their temperature, and hence their available energy for reaction, increases.
- Formation of the epitaxial layer occurs by final pyrolysis of the constituent chemicals at the substrate surface. Crystals are formed by a chemical reaction and not by physical deposition processes. Growth occurs in the gas phase at moderate pressures. Consequently VPE is a desirable growth technique for thermodynamically metastable alloys.
- VPE is commonly used for manufacturing laser diodes, solar cells, and LEDs.
- FIG. 1 illustrates a known vapor phase epitaxy system used to form compound semiconductors.
- FIG. 2 illustrates a vapor phase epitaxy system according to the present teachings that includes at least one electrode positioned in a flow of a first precursor gas and being substantially isolated from a flow of a second precursor gas.
- FIG. 3 illustrates a top-view of one embodiment of a disk-shaped gas injector according to the present teaching that includes a first region that is positioned in quadrants of the gas injector and a second region extending radially through the quadrants.
- FIG. 4A illustrates a cross-section of one embodiment of a disk-shaped gas injector according to the present teaching that includes a plurality of first and second regions which alternates across the gas injector.
- FIG. 4B illustrates an expanded view of the disk-shaped gas injector illustrating mechanical or chemical barriers that isolate the electrodes from the second precursor gas.
- FIG. 5 illustrates a perspective top-view of a vapor phase epitaxy system according to the present teachings that includes a horizontal flow gas injector.
- FIG. 6 illustrates a foil-shaped electrode positioned close to the surface of the platen for thermally activating a precursor gas in a vapor phase epitaxy system according to the present teaching.
- available energy refers to the chemical potential of a reactant species that is used in a chemical reaction.
- the chemical potential is a term commonly used in thermodynamics, physics, and chemistry to describe the energy of a system (particle, molecule, vibrational or electronic states, reaction equilibrium, etc.).
- more specific substitutions for the term chemical potential may be used in various academic disciplines, including Gibbs free energy (thermodynamics) and Fermi level (solid state physics), etc.
- references to the available energy should be understood as referring to the chemical potential of the specified material.
- FIG. 1 illustrates a known VPE system 100 used to form compound semiconductors.
- This system 100 includes a reaction chamber 101 having a spindle 102 mounted therein.
- the spindle 102 is rotatable about an axis 104 by a rotary drive mechanism 106 .
- the axis 104 extends in an upstream direction U and a downstream direction D as shown in FIG. 1 .
- a platen 108 which in many systems is a disc-like substrate carrier, is mounted on the spindle 102 for rotation therewith.
- the platen 108 and spindle 102 rotate at rotation rates that are in the range of about 100-2,000 revolutions per minute.
- the platen 108 is adapted to hold a plurality of disc-like substrates 110 so that surfaces 112 of the substrates 110 are in a plane perpendicular to axis 104 and face in the upstream direction U.
- a heater 114 such as a resistance heating element, is positioned within the reaction chamber 101 proximate to the platen 108 .
- the heater 114 heats the substrate carrier to the desired processing temperature.
- a gas injector 116 which is sometimes known in the art as a flow inlet element, is mounted upstream of the platen 108 and spindle 102 .
- the gas injector 116 is connected to process gas sources 118 , 120 , and 122 .
- the gas injector 116 directs streams of various process gases into the reaction chamber 101 .
- a fluid coolant supply 117 is coupled to liquid cooling channels in the flow injector 116 to circulate the cooling fluid in order to control the temperature of the gas injector 116 .
- streams of process gases from the process gas sources 118 , 120 , and 122 flow generally downstream toward the platen 108 and substrates 110 in a region of the reaction chamber 101 between the gas injector 116 and the platen 108 , that is referred to herein as the “flow region 124 .”
- this downward flow does not result in substantial mixing between separate streams of downwardly flowing gas. It is typically desirable to design and operate the system 100 so that there is laminar flow in the flow region 124 .
- the platen 108 is rotated rapidly about the axis 104 with the rotary drive 106 so that the surface of the platen 108 and the surfaces of the substrates 110 are moving rapidly.
- the rapid motion of the platen 108 and substrates 110 entrains the gases into rotational motion about axis 104 . Consequently, the process gases flow radially away from axis 104 , thereby causing the process gases in the various streams to mix with one another within a boundary layer that is schematically indicated in boundary layer region 126 .
- the boundary layer 126 is generally regarded as a region in which the gas flow is substantially parallel to the surfaces of the substrates 110 .
- the thickness of the boundary layer 126 is on order of about 1 cm and the distance from the downstream face of gas injector 116 to the surfaces 112 of the substrates 110 is about 5-8 cm.
- the flow region 124 occupies the major portion of the space between the gas injector 116 and the platen 108 .
- the rotational motion of the platen 108 pumps the gases outwardly around the peripheral edges of the platen 108 , and hence the gases pass downstream to an exhaust system 130 .
- the reaction chamber 101 is maintained under an absolute pressure from about 25-1,000 Torr.
- Many processes operate at an absolute pressure of about 50-760 Torr.
- the gas injector 116 is maintained at a relatively low temperature, which is typically about 60° C. or less, although higher temperatures are sometimes used.
- the Group III halide is maintained at an elevated temperature to prevent condensation. This elevated temperature is below the temperature of the substrates 110 where deposition occurs.
- the relatively low temperature is chosen to inhibit decomposition of reactants and/or to inhibit the formation of undesired reactions of the reactants in the gas injector 116 and in the flow region 124 .
- the walls 101 ′ of reaction chamber 101 are cooled to about 25° C. in order to minimize the rate of any reactions of the process gases in the flow region 124 remote from the platen 108 .
- the reaction energy is provided primarily by heat from the platen 108 and substrates 110 .
- the reaction energy is the energy required to dissociate a Group V hydride, such as NH 3 , to form reactive intermediates, such as NH 2 and NH.
- a Group V hydride such as NH 3
- reactive intermediates such as NH 2 and NH.
- increasing the temperature of the platen 108 and substrates 110 also tends to increase dissociation of the deposited compound semiconductors.
- increasing the temperature of the platen 108 and substrates 110 can result in a loss of nitrogen from the semiconductor especially when growing Indium-rich compounds such as InGaN and InN.
- VPE systems include one or more electrically active electrodes that are used to add additional energy to a process gas in order to increase the reaction rate or to modify the reaction chemistry.
- electrically active electrodes such as wires and filaments in any shape, which are exposed to a process gas in the process chamber 101 .
- the present teachings it is desirable to supply energy to one of the process gases without supplying significant energy to other process gases.
- the Group V hydride precursor gases which for example, can be ammonia (NH3) without supplying significant energy to the Group III metal precursor gases.
- the one or more electrically active electrodes can be physically isolated from a precursor gas that will react in the presence of the elevated temperatures. Physical isolation can be achieved by introducing the gases separately in different regions of the reactor and by using baffles and/or gas curtains as described herein.
- gases can be introduced separately, but at the same distance from the substrates 110 in order to maintain laminar flow over the surfaces of the substrates 110 .
- FIG. 2 illustrates a vapor phase epitaxy system 200 according to the present teachings that includes at least one electrode positioned in a flow of a first precursor gas and being substantially isolated from a flow of a second precursor gas.
- the VPE system 200 is similar to the VPE system described in connection with FIG. 1 .
- the VPE system 200 includes a process chamber 201 for containing process gasses.
- the VPE system 200 includes a platen 202 , which is a disk-shaped substrate carrier that supports substrates 204 for vapor phase epitaxy.
- the VPE system 200 includes a gas injector 206 comprising multiple regions that are separated by physical barriers and/or chemical barriers.
- the VPE system 200 can include a first region 208 that is coupled to a first precursor gas source 210 and a second region 212 that is coupled to a second precursor gas source 214 .
- Any type of precursor gas can be used in the VPE system according to the present teachings.
- the gas injector 206 can include additional regions that are separated by physical barriers and/or chemical barriers that may or may not be coupled to additional precursor and/or inert gas sources 211 .
- the first region 208 in the gas injector 206 is positioned in quadrants of a disk and a second region 212 extends radially through the quadrants.
- the first and second regions 208 , 212 in the gas injector 206 include a plurality of first and second regions that alternate across at least a portion of the gas injector 206 .
- the gas injector 206 comprises liquid cooling channels to control a temperature of the gas injector 206 .
- a fluid coolant supply 216 is coupled to liquid cooling channels in the flow injector 206 to circulate the cooling fluid in order to control the temperature of the gas injector 206 .
- the gas injector 206 is designed to flow the first and second precursor gases over the platen 202 that supports the substrates 204 with either a laminar flow or a non-laminar flow. Also, in various embodiments, the gas injector 206 flows the first and second precursor gases in various directions relative to the platen 202 that supports the substrates 204 . For example, in some VPE systems according to the present invention, the gas injector 206 flows at least one of the first and second precursor gases in a direction that is perpendicular to the surface of platen 202 that supports the substrates 204 .
- the gas injector 206 flows at least one of the first and second precursor gases in a direction that is parallel to the platen 202 that supports the substrates 204 .
- the gas injector 206 flows one of the first and second precursor gases in a direction that is substantially parallel to the platen 202 that supports the substrates 204 and the other of the first and second precursor gases through the gas injector 206 in a direction that is substantially perpendicular to the platen 202 that supports the substrates 204 .
- Electrodes 218 , 219 are positioned in the first region 212 so that first precursor gas flows in contact with or in close proximity to the electrodes 218 , 219 .
- the electrodes 218 , 219 are positioned so that they are substantially isolated from the flow of the second precursor gas.
- the electrodes 218 , 219 can be oriented in numerous ways.
- the electrodes 218 , 219 can be oriented in a plane of the gas injector 206 (e.g. electrode 218 ).
- the electrodes 218 , 219 can also be oriented perpendicular to the plane of the gas injector 206 (e.g. electrode 219 ).
- the electrodes 218 , 219 can be positioned anywhere between the gas injector 206 and the platen 202 that supports the substrates 204 including in close proximity to the gas injector 206 and in close proximity to the platen 202 that supports the substrates 204 .
- the electrodes 218 , 219 can be formed of any type of electrode material. However, the electrodes 218 , 219 are typically formed of a material that is resistant to corrosion so that they do not introduce any contamination into the VPE system 200 . Also, in various embodiments, any type of electrode configuration can be used including any number of electrodes, which can include only one electrode. In addition, in various embodiments, the electrodes 218 , 219 can be formed in any shape.
- the VPE system 200 shows two different types of electrodes, a linear (straight) electrode 218 and a non-linear electrode 219 , such as a coiled electrode or other structure that increases or maximizes the surface area of the electrode that is exposed to the first precursor gas. In many systems, the same type of electrode is used, but in some systems two or more different types of electrodes are used.
- the electrodes 218 , 219 are electrically active. In the embodiment shown in FIG. 2 , the electrodes 218 , 219 are at a floating potential when not powered. An output of a power supply 220 is electrically connected to the electrodes 218 , 219 . The power supply 220 generates a current that heats the electrodes 218 , 219 so as to thermally activate at least some of the first precursor gas molecules flowing in contact with or proximate to the electrodes 218 , 219 .
- the gas injector 206 includes one or more baffles 222 or other types of physical structure that physically separates the first region 208 from the second region 212 so as to isolate the electrodes 218 , 219 from the flow of the second precursor gas.
- the one or more baffles 222 are formed of non-thermally conductive materials so that the thermal profile in the process chamber 201 does not significantly change from thermal radiation emitted by the baffles 222 .
- the one or more baffles 222 are shaped to preserve laminar flow of at least one of the first and second precursor gases across the platen 202 that supports the substrates 204 .
- the electrodes 218 , 219 are formed of a catalytic material.
- a heater can be positioned in thermal communication with the catalytic material so as to increase a reaction rate of the catalytic material.
- the electrodes 218 , 219 are formed of a catalytic material including at least one of rhenium, tungsten, niobium, tantalum, and molybdenum.
- the electrodes 218 , 219 can be formed of refractory and/or transition metals.
- a method of operating a vapor phase epitaxy system includes injecting a first precursor gas for vapor phase epitaxy in the first region 208 proximate to a platen 202 supporting substrates 204 and injecting a second precursor gas for vapor phase epitaxy in a second region 212 proximate to the platen 202 supporting substrates.
- the first and second precursor gases are injected in a plurality of respective alternating first and second regions as described in connection with FIG. 4A .
- the first precursor gas can be a hydride precursor gas, such as NH 3 and the second precursor gas can be an organometalic precursor gas, such as trimethyl gallium, that is used to grow GaN by VPE.
- the first precursor gas can be a hydride precursor gas, such as NH 3 and the second precursor gas can be a metal halide precursor gas, such as gallium chloride, that is used to grow GaN by VPE.
- three precursor gases are used.
- the first precursor gas can be a hydride precursor gas, such as NH 3
- the second precursor gas can be an organometalic precursor gas, such as trimethyl gallium.
- the third precursor gas can be a halide precursor gas, such as HCl. With these three precursor gases, the halide precursor gas and the organometallic precursor gas react to form a metal halide.
- the gas injector 206 can include a third region for injecting the third precursor gas. Alternatively, the third precursor gas can be injected in the either the first or the second regions 208 , 212 .
- the first and second precursor gases can be injected at any angle including perpendicular and parallel to the platen 202 supporting substrates 204 .
- the angle of injection for the second precursor gas can be the same as or different from the angle of injection of the first precursor gas.
- First precursor gas molecules flow in contact with or in close proximity to the electrodes 218 , 219 .
- the electrodes 218 , 219 are at least partially isolated from the flow of the injected second precursor gas.
- the electrodes 218 , 219 are then electrically activated.
- the electrodes 218 , 219 are isolated from a flow of the injected second precursor gas with physical baffles 222 .
- the baffles 222 can be performed so as to preserves laminar flow over the platen 202 supporting substrates 204 as described in connection with FIG. 6 .
- inert gases are injected in regions that isolate the electrodes 218 , 219 from a flow of the second precursor gas.
- inert gas refers to a gas which does not substantially participate in the growth reactions. Inert gases are often mixed with the precursor gases. Such inert gases are referred to in the art as “carrier gases.”
- carrier gases For example, when growing III-V semiconductor materials, gases, such as N2, H2, He or mixtures thereof, are commonly used as carrier gases for precursor gases.
- the power supply 220 generates a current that flows through the electrodes 218 , 219 so that the electrodes 218 , 219 generates heat that thermally activates the first precursor gas molecules without activating a substantial amount of second precursor gas molecules.
- the heated electrodes 218 , 219 transfer energy to the first precursor gas molecules by various mechanisms including thermionic emission of electrons and interaction of the electrons with the reactant species.
- the electrons do not have sufficient energy to ionize the reactant species.
- One example where the electrons do not have sufficient energy to ionize the reactant species is ionizing NH 3 . In methods that ionize NH 3 , the electrons interact with the reactant species so as to promote the species to a higher energy state.
- the electrodes 218 , 219 are catalytic electrodes, which are formed of a catalytic material capable of catalyzing the first precursor gas if conditions are favorable.
- the catalytic electrode can be heated with a separate heater to enhance the catalytic reaction.
- such a catalytic electrode is useful to decompose NH 3 close to the gas injector 206 surface because it is far from the platen 202 supporting the substrate 204 and, therefore, may not have enough thermal energy for decomposition.
- Using a catalytic electrode lowers the activation energy for decomposition and, therefore, increases the probability of NH 3 decomposition even in regions of the process chamber 201 that have relatively low temperatures (i.e.
- the catalytic electrode allows the reaction to proceed or, if the reaction was inclined to occur, to proceed more rapidly by lowering the activation energy of the reaction or having the reaction proceed through a different reaction pathway.
- the catalytic electrode is positioned proximate to the boundary layer region 126 ( FIG. 1 ) so that the first precursor gas mixes with the second precursor gas shortly after the first precursor gas interacts with the catalytic electrode.
- VPE systems include a catalytic electrode that is not energized. This is a catalytic electrode that is not powered by a power supply and that uses only the catalytic material and ambient heat to enhance the catalytic reaction.
- a catalytic electrode can be positioned anywhere in the process chamber 201 . In some of these VPE systems, the catalytic electrode is positioned proximate to the platen 202 . Catalytic electrodes positioned proximate to the platen 202 can reach effective catalytic activity through secondary heating from the platen 202 alone.
- Slab-like streams of thermally activated first precursor gas molecules flow generally downstream toward the platen 202 and substrates 204 in a flow region 224 of the reaction chamber 201 between the gas injector 206 and the platen 202 .
- the downward flow does not result in substantial mixing between separate streams of downwardly flowing gas. It is sometimes desirable to design and operate the system 200 so that there is laminar flow in the flow region 224 .
- the platen 202 is rotated rapidly about the axis 104 with the rotary drive 106 so that the surface of the platen 202 and the surfaces of the substrates 204 are moving rapidly.
- the rapid motion of the platen 202 and substrates 204 entrains the gases into rotational motion about axis 104 .
- the process gases flow radially away from axis 104 , thereby causing the process gases in the various streams to mix with one another within a boundary layer that is schematically indicated in boundary layer region 126 .
- the activated first precursor gas molecules and the second precursor gas molecules in the mixture within the boundary layer flow over the surface of the substrates 204 , thereby reacting to form a VPE film.
- precursor gasses are introduced into the process chamber 201 at a relatively low temperature, and hence have low available energy, typically well below the energy required to induce rapid reaction of the reactants on the surface of the substrate 204 .
- most of the heating, and hence most of the increase in available energy of the reactants occurs within the boundary layer region 126 .
- substantially all of the heating depends upon the temperature of the substrate 204 and platen 202 .
- substantial energy is supplied to at least one precursor gas other than energy applied by heat transfer from the substrate, platen, and chamber walls.
- the location where the energy is applied can be controlled. For example, by applying the energy to the first precursor gas near the transition between the flow region 124 ( FIG. 1 ) and the boundary layer region 126 , the time between the moment when a given portion of a first precursor gas reaches a high available energy and the time when that portion encounters the substrate surface can be minimized.
- Such control can help to minimize undesired side reactions.
- ammonia having high available energy may spontaneously decompose into species such as NH 2 and NH, and then these species in turn may decompose to monatomic nitrogen, which very rapidly forms N 2 .
- Nitrogen is essentially unavailable for reaction with a metal organic.
- the desired reactions which deposit the semiconductor at the surface such as reaction of the excited NH 3 with the metal organic or reaction of NH 2 or NH species with the metal organic at the substrate surface can be enhanced, whereas the undesirable side reaction can be suppressed.
- one feature of the present teachings is that by using the electrodes according to the present invention, the operator has the ability to control the available energy of at least one precursor gas independently of the temperature of the substrates 204 .
- the available energy of at least one precursor gas in the boundary layer region 126 can be increased without increasing the temperature of the substrates 204 and the platen 202 .
- the substrates 204 and the platen 202 can be maintained at a lower temperature while still maintaining an acceptable level of available energy.
- FIG. 3 illustrates a top-view of one embodiment of a disk-shaped gas injector 300 according to the present teaching which includes a first region 302 that is positioned in quadrants of the gas injector 300 and a second region 304 extending radially through the quadrants.
- the top-view shown in FIG. 3 is presented looking upstream toward the precursor gas inlets in the gas injector 300 .
- the disk-shaped gas injector 300 includes mechanical or chemical barriers 305 that isolate the first and second regions 302 , 304 .
- the mechanical or chemical barriers 305 can be physical structures, such as baffles and/or gas curtains that inject inert gases to isolate the first and second regions 302 , 304 .
- FIG. 3 shows electrodes 306 , 308 in two quadrants for clarity.
- electrodes 306 , 308 are positioned in each of the quadrants of the first region 302 .
- each of the electrodes 306 , 308 is suspended with an insulating support structure so that the electrodes 306 , 308 are electrically floating and easily connected to the power supply 220 ( FIG. 2 ).
- the electrodes can be linear (straight) electrodes or non-linear electrodes, such as coiled electrodes or other structures that increases or maximizes the surface area of the electrodes 306 , 308 that are exposed to the first precursor gas.
- the same type of electrode is used throughout the first region 302 , but in some systems two or more different types of electrodes are used in different positions in the first region 302 .
- the type of electrode near the second region 304 can be different from the type of electrode in the middle of the first region 302 .
- FIG. 3 shows a first type of electrode 306 , which can be either linear or non-linear, positioned in the plane of the first precursor gas flow.
- FIG. 3 shows a second type of electrode 308 positioned in the plane of the gas injector 300 .
- FIG. 3 shows the second type of electrode 308 in a linear pattern.
- the second type of electrode can also be formed in a non-linear pattern, such as a coil.
- the electrodes 306 , 308 are positioned far enough from the second region 304 so that the chemical potential of the second precursor is not changed based on its proximity to the electrodes 306 , 308 . In other words, the electrodes 306 , 308 have essentially no interaction with the second precursor gas.
- One feature of the VPE system of the present teachings is that the first and second precursor gases can be injected at the same distance from the substrate 204 ( FIG. 2 ). In other words, the second precursor gas does not have to be injected below the first precursor gas in the process chamber 201 to avoid activation. Injecting both the first and the second precursor gases at the same level in the process chamber 201 is important in many VPE processes because such injection can achieve laminar flow over large areas in vertical flow VPE process chambers. Laminar flow is desirable for many VPE processes because it improves uniformity.
- Methods of operating VPE systems comprising the gas injector 300 of FIG. 3 include injecting the first precursor gas in the quadrants of the first region 302 so that first precursor gas molecules contact the electrodes 306 , 308 .
- the electrodes 306 , 308 are powered with power supply 220 ( FIG. 2 ) so that they thermally activate the first precursor gas molecules.
- the first precursor gas can be a hydride precursor gas precursor gas admixture with a carrier gas.
- the second precursor gas is injected in the second region 304 adjacent to the electrodes 306 , 308 .
- the second precursor gas can be an organometallic admixture with a carrier gas such as nitrogen.
- Process conditions are chosen so that the second precursor gas does not flow close enough to the electrodes 306 , 308 to be thermally activated by heat generated by the electrodes.
- the activated first precursor gas molecules and the second precursor gas molecules then flow over the surface of the substrates 204 ( FIG. 2 ), thereby reacting to form a VPE film.
- FIG. 4A illustrates a cross-section of one embodiment of a disk-shaped gas injector 400 according to the present teaching that includes a plurality of first and second regions 402 , 404 which alternates across the gas injector 400 .
- the top-view shown in FIG. 4A is presented looking upstream toward the precursor gas inlets in the gas injector 400 .
- the plurality of first regions 402 includes gas inlets for injecting hydride or halide precursor gases with a carrier gas.
- the plurality of second regions 404 includes gas inlets for injecting organometallic gases with a carrier gas.
- the area of the first regions 402 is larger than the area of the second regions 404 .
- the flow rates of the first and second precursor gases and of the carrier gases during operation can be adjusted for the particular dimensions of the first and the second regions 402 , 404 so that the desired volumes and concentrations of precursor gases flow across the substrates 204 ( FIG. 2 ) being processed.
- the gas injector 400 includes a plurality of electrodes 406 , 408 positioned in the plurality of first regions 402 .
- the plurality of electrodes 406 , 408 are positioned in the first region 402 or as far from the flow of the second precursor gas as possible so as to minimize the activation of second precursor gas molecules with the electrodes 406 , 408 .
- FIG. 4A illustrates electrodes 406 , 408 in two different orientations. Electrodes are only shown in a few sections of the plurality of first regions 402 for clarity. In many VPE systems according to the present teachings, electrodes 406 , 408 are positioned in each of the plurality of the first regions 402 .
- each of the electrodes 406 , 408 is suspended with an insulating support structure so that the electrodes 406 , 408 are electrically floating and easily connected to the power supply 220 ( FIG. 2 ).
- the electrodes 406 , 408 can be linear (straight) electrodes or non-linear electrodes, such as coiled electrodes or other structures that increases or maximizes the surface area of the electrodes 406 , 408 that are exposed to the first precursor gas.
- FIG. 4A shows a first type of electrode 406 , which can be either linear or non-linear, positioned in the plane of the first precursor gas flow.
- FIG. 4A shows a second type of electrode 408 positioned in the plane of the gas injector 400 .
- FIG. 4A shows the second type of electrode 408 as a non-linear electrode that can also be coiled.
- the second type of electrode 408 can also be a linear electrode.
- FIG. 4B illustrates an expanded view of the disk-shaped gas injector 400 illustrating mechanical or chemical barriers 405 that isolate the electrodes 406 ( FIG. 4A ), 408 from the second precursor gas.
- the mechanical or chemical barriers 405 isolate the electrodes 406 , 408 in first region 402 from the precursor gas flowing in the second region 404 .
- the barriers 405 can be a physical structure, such as baffle.
- the barriers 405 can be a gas curtains that inject inert gases between the first and second regions 402 , 404 as described herein.
- Methods of operating VPE systems comprising the gas injector 400 of FIGS. 4A and 4B include injecting the first precursor gas in the plurality of first regions 402 so that first precursor gas molecules contact the electrodes 406 , 408 .
- the electrodes 406 , 408 are powered with the power supply 220 ( FIG. 2 ) so that they thermally activate the first precursor gas molecules.
- the first precursor gas can be a hydride precursor gas admixture with a carrier gas that is thermally activated when it flows in contact with the electrodes 406 , 408 .
- the second precursor gas is injected in the plurality of second regions 404 .
- the second precursor gas can be an organometallic admixture with a carrier gas.
- Process conditions are chosen so that the second precursor gas does not flow close enough to the electrodes 406 , 408 to be thermally activated by heat generated by the electrodes 406 , 408 .
- the activated first precursor gas molecules and the second precursor gas molecules then flow over the surface of the substrates 204 ( FIG. 2 ), thereby reacting to form a VPE film.
- FIG. 5 illustrates a perspective top-view of a VPE system 500 according to the present teachings that includes a horizontal flow gas injector 502 .
- the VPE system 500 is similar to the VPE system 200 that was described in connection with FIG. 2 .
- the VPE system 500 includes circular gas injectors 504 , 506 , and 508 that inject precursor gases and inert gases in the plane of the platen 510 (i.e. horizontal flow into the process chamber).
- the first circular gas injector 504 is coupled to a first precursor gas source 512 .
- the second circular gas injector 506 is coupled to an inert gas source 514 .
- the third circular gas injector 508 is coupled to a second precursor gas source 516 .
- the first and third circular gas injectors 504 , 508 are also coupled to a carrier gas source.
- the first circular gas injector 504 injects the first precursor gas in a first horizontal region 518 .
- the third circular gas injector 508 injects the second precursor gas in a second horizontal region 520 .
- a circular electrode 522 is positioned in the first horizontal region 518 so that first precursor gas molecules flow in contact with or proximate to the circular electrode 522 .
- a physical or chemical barrier can be positioned between the first and the second horizontal regions 518 , 520 in order to isolate the circular electrode 522 from the flow of the second precursor gas molecules.
- a baffle is positioned above the circular electrode 522 to substantially prevent the first precursor gas molecules from being thermally activated by the electrode 522 as they flow to the platen 510 .
- a gas curtain is used to separate the first and the second horizontal regions 518 and 520 .
- the second circular gas injector 506 injects inert gas between the first and the second horizontal regions 518 , 520 in a pattern that substantially prevents the second precursor gas molecules from being activated by the circular electrode 522 .
- Methods of operating the VPE system 500 of FIG. 5 include injecting the first precursor gas with the first circular gas injectors 504 and injecting the second precursor gas with the third circular gas injectors 508 .
- An inert gas is injected between the first and the second horizontal regions 518 , 520 with the second circular gas injectors 506 to form a chemical barrier that prevents the second precursor gas molecules from being activated by the circular electrode 522 .
- the circular electrode 522 is powered by a power supply 220 ( FIG. 2 )
- the circular electrode 522 thermally activates first precursor gas molecules injected by the first circular gas injector 504 that flow in contact with or in close proximity to the circular electrode 522 .
- the activated first precursor gas molecules and the second precursor gas molecules then flow over the surface of the substrates 524 , thereby reacting to form a VPE film.
- FIG. 6 illustrates a foil-shaped electrode 600 positioned close to the surface of the platen 602 for thermally activating a precursor gas in a VPE system according to the present teaching.
- the electrode 600 is positioned close to the surface of the platen 602 and substrate 604 being processed.
- the electrode 600 shown in FIG. 6 is shaped as an airfoil in order to provide a laminar or near laminar flow of precursor gases across the surface of the substrate 604 .
- the electrode 600 can be shaped to provide a relatively large surface area for the catalytic reaction.
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Abstract
A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules.
Description
- This application claims priority to U.S. Provisional Patent Application Ser. No. 61/195,093 filed Oct. 3, 2008, entitled “Chemical Vapor Deposition with Energy Input,” the entire application of which is incorporated herein by reference.
- The section headings used herein are for organizational purposes only and should not to be construed as limiting the subject matter described in the present application in any way.
- Vapor phase epitaxy (VPE) is a type of chemical vapor deposition (CVD) which involves directing one or more gases containing chemical species onto a surface of a substrate so that the reactive species react and form a film on the surface of the substrate. For example, VPE can be used to grow compound semiconductor material on a substrate. The substrate is typically a crystalline material in the form of a disc, which is commonly referred to as a “wafer.” Materials are typically grown by injecting at least a first and a second precursor gas into a process chamber containing the crystalline substrate.
- Compound semiconductors, such as III-V semiconductors, can be formed by growing various layers of semiconductor materials on a substrate using a hydride precursor gas and an organometalic precursor gas. Metalorganic vapor phase epitaxy (MOVPE) is a vapor deposition method that is commonly used to grow compound semiconductors using a surface reaction of metalorganics and metal hydrides containing the required chemical elements. For example, indium phosphide could be grown in a reactor on a substrate by introducing trimethylindium and phosphine. Alternative names for MOVPE used in the art include organometallic vapor phase epitaxy (OMVPE), metalorganic chemical vapor deposition (MOCVD), and organometallic chemical vapor deposition (OMCVD). In these processes, the gases are reacted with one another at the surface of a substrate, such as a sapphire, Si, GaAs, InP, InAs or GaP substrate, to form a III-V compound of the general formula InXGaYAlZNAAsBPCSbD, where X+Y+Z equals approximately one, and A+B+C+D equals approximately one, and each of X, Y, Z, A, B, C, and D can be between zero and one. In some instances, bismuth may be used in place of some or all of the other Group III metals.
- Compound semiconductors, such as III-V semiconductors, can also be formed by growing various layers of semiconductor materials on a substrate using a hydride or a halide precursor gas process. In one halide vapor phase epitaxy (HYPE) process, Group III nitrides (e.g., GaN, AlN) are formed by reacting hot gaseous metal chlorides (e.g., GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace. One feature of HYPE is that it can have a very high growth rate, up to 100 μm per hour for some state-of-the-art processes. Another feature of HYPE is that it can be used to deposit relatively high quality films because films are grown in a carbon free environment and because the hot HCl gas provides a self-cleaning effect.
- In these processes, the substrate is maintained at an elevated temperature within a reaction chamber. The precursor gases are typically mixed with inert carrier gases and are then directed into the reaction chamber. Typically, the gases are at a relatively low temperature when they are introduced into the reaction chamber. As the gases reach the hot substrate, their temperature, and hence their available energy for reaction, increases. Formation of the epitaxial layer occurs by final pyrolysis of the constituent chemicals at the substrate surface. Crystals are formed by a chemical reaction and not by physical deposition processes. Growth occurs in the gas phase at moderate pressures. Consequently VPE is a desirable growth technique for thermodynamically metastable alloys. Currently, VPE is commonly used for manufacturing laser diodes, solar cells, and LEDs.
- The present teaching, in accordance with preferred and exemplary embodiments, together with further advantages thereof, is more particularly described in the following detailed description, taken in conjunction with the accompanying drawings. The skilled person in the art will understand that the drawings, described below, are for illustration purposes only. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating principles of the teaching. The drawings are not intended to limit the scope of the Applicant's teaching in any way.
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FIG. 1 illustrates a known vapor phase epitaxy system used to form compound semiconductors. -
FIG. 2 illustrates a vapor phase epitaxy system according to the present teachings that includes at least one electrode positioned in a flow of a first precursor gas and being substantially isolated from a flow of a second precursor gas. -
FIG. 3 illustrates a top-view of one embodiment of a disk-shaped gas injector according to the present teaching that includes a first region that is positioned in quadrants of the gas injector and a second region extending radially through the quadrants. -
FIG. 4A illustrates a cross-section of one embodiment of a disk-shaped gas injector according to the present teaching that includes a plurality of first and second regions which alternates across the gas injector. -
FIG. 4B illustrates an expanded view of the disk-shaped gas injector illustrating mechanical or chemical barriers that isolate the electrodes from the second precursor gas. -
FIG. 5 illustrates a perspective top-view of a vapor phase epitaxy system according to the present teachings that includes a horizontal flow gas injector. -
FIG. 6 illustrates a foil-shaped electrode positioned close to the surface of the platen for thermally activating a precursor gas in a vapor phase epitaxy system according to the present teaching. - Reference in the specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the teaching. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment.
- It should be understood that the individual steps of the methods of the present teachings may be performed in any order and/or simultaneously as long as the teaching remains operable. Furthermore, it should be understood that the apparatus and methods of the present teachings can include any number or all of the described embodiments as long as the teaching remains operable.
- The present teaching will now be described in more detail with reference to exemplary embodiments thereof as shown in the accompanying drawings. While the present teachings are described in conjunction with various embodiments and examples, it is not intended that the present teachings be limited to such embodiments. On the contrary, the present teachings encompass various alternatives, modifications and equivalents, as will be appreciated by those of skill in the art. Those of ordinary skill in the art having access to the teaching herein will recognize additional implementations, modifications, and embodiments, as well as other fields of use, which are within the scope of the present disclosure as described herein.
- The term “available energy” as used in the present disclosure refers to the chemical potential of a reactant species that is used in a chemical reaction. The chemical potential is a term commonly used in thermodynamics, physics, and chemistry to describe the energy of a system (particle, molecule, vibrational or electronic states, reaction equilibrium, etc.). However, more specific substitutions for the term chemical potential may be used in various academic disciplines, including Gibbs free energy (thermodynamics) and Fermi level (solid state physics), etc. Unless otherwise specified, references to the available energy should be understood as referring to the chemical potential of the specified material.
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FIG. 1 illustrates a knownVPE system 100 used to form compound semiconductors. Thissystem 100 includes areaction chamber 101 having aspindle 102 mounted therein. Thespindle 102 is rotatable about anaxis 104 by arotary drive mechanism 106. Theaxis 104 extends in an upstream direction U and a downstream direction D as shown inFIG. 1 . Aplaten 108, which in many systems is a disc-like substrate carrier, is mounted on thespindle 102 for rotation therewith. Typically, theplaten 108 andspindle 102 rotate at rotation rates that are in the range of about 100-2,000 revolutions per minute. Theplaten 108 is adapted to hold a plurality of disc-like substrates 110 so thatsurfaces 112 of thesubstrates 110 are in a plane perpendicular toaxis 104 and face in the upstream direction U. - A
heater 114, such as a resistance heating element, is positioned within thereaction chamber 101 proximate to theplaten 108. Theheater 114 heats the substrate carrier to the desired processing temperature. Agas injector 116, which is sometimes known in the art as a flow inlet element, is mounted upstream of theplaten 108 andspindle 102. Thegas injector 116 is connected to processgas sources gas injector 116 directs streams of various process gases into thereaction chamber 101. Afluid coolant supply 117 is coupled to liquid cooling channels in theflow injector 116 to circulate the cooling fluid in order to control the temperature of thegas injector 116. - In operation, streams of process gases from the
process gas sources platen 108 andsubstrates 110 in a region of thereaction chamber 101 between thegas injector 116 and theplaten 108, that is referred to herein as the “flowregion 124.” In known systems, this downward flow does not result in substantial mixing between separate streams of downwardly flowing gas. It is typically desirable to design and operate thesystem 100 so that there is laminar flow in theflow region 124. In normal operation, theplaten 108 is rotated rapidly about theaxis 104 with therotary drive 106 so that the surface of theplaten 108 and the surfaces of thesubstrates 110 are moving rapidly. The rapid motion of theplaten 108 andsubstrates 110 entrains the gases into rotational motion aboutaxis 104. Consequently, the process gases flow radially away fromaxis 104, thereby causing the process gases in the various streams to mix with one another within a boundary layer that is schematically indicated inboundary layer region 126. - In practice, there is a gradual transition between the generally downstream gas flow indicated by
arrows 128 in theflow region 124 and the rapid rotational flow and mixing in theboundary layer 126. Nevertheless, theboundary layer 126 is generally regarded as a region in which the gas flow is substantially parallel to the surfaces of thesubstrates 110. In some methods of operation, the thickness of theboundary layer 126 is on order of about 1 cm and the distance from the downstream face ofgas injector 116 to thesurfaces 112 of thesubstrates 110 is about 5-8 cm. Thus, theflow region 124 occupies the major portion of the space between thegas injector 116 and theplaten 108. The rotational motion of theplaten 108 pumps the gases outwardly around the peripheral edges of theplaten 108, and hence the gases pass downstream to an exhaust system 130. In many methods of operation, thereaction chamber 101 is maintained under an absolute pressure from about 25-1,000 Torr. Many processes operate at an absolute pressure of about 50-760 Torr. - The
gas injector 116 is maintained at a relatively low temperature, which is typically about 60° C. or less, although higher temperatures are sometimes used. In Halide VPE systems, the Group III halide is maintained at an elevated temperature to prevent condensation. This elevated temperature is below the temperature of thesubstrates 110 where deposition occurs. The relatively low temperature is chosen to inhibit decomposition of reactants and/or to inhibit the formation of undesired reactions of the reactants in thegas injector 116 and in theflow region 124. Also, in many processes, thewalls 101′ ofreaction chamber 101 are cooled to about 25° C. in order to minimize the rate of any reactions of the process gases in theflow region 124 remote from theplaten 108. - It is desirable to promote rapid reactions between the gases in the
boundary layer 126 at the surfaces of thesubstrates 110 because the residence time of the gases in theboundary layer 126 is relatively brief. In a conventional VPE system, the reaction energy is provided primarily by heat from theplaten 108 andsubstrates 110. For example, in some processes, the reaction energy is the energy required to dissociate a Group V hydride, such as NH3, to form reactive intermediates, such as NH2 and NH. However, increasing the temperature of theplaten 108 andsubstrates 110 also tends to increase dissociation of the deposited compound semiconductors. For example, increasing the temperature of theplaten 108 andsubstrates 110 can result in a loss of nitrogen from the semiconductor especially when growing Indium-rich compounds such as InGaN and InN. - In one aspect of the present teachings, VPE systems include one or more electrically active electrodes that are used to add additional energy to a process gas in order to increase the reaction rate or to modify the reaction chemistry. One skilled in the art will appreciate that any type of electrically active electrode can be used, such as wires and filaments in any shape, which are exposed to a process gas in the
process chamber 101. - In many embodiments of the present teachings, it is desirable to supply energy to one of the process gases without supplying significant energy to other process gases. For example, in many Group III-V deposition processes, it is desirable to apply additional energy to the Group V hydride precursor gases, which for example, can be ammonia (NH3) without supplying significant energy to the Group III metal precursor gases. One skilled in the art will appreciate that selective application of energy to one or more of process gases can be accomplished in numerous ways. For example, the one or more electrically active electrodes can be physically isolated from a precursor gas that will react in the presence of the elevated temperatures. Physical isolation can be achieved by introducing the gases separately in different regions of the reactor and by using baffles and/or gas curtains as described herein. One feature of the present teachings is that gases can be introduced separately, but at the same distance from the
substrates 110 in order to maintain laminar flow over the surfaces of thesubstrates 110. -
FIG. 2 illustrates a vaporphase epitaxy system 200 according to the present teachings that includes at least one electrode positioned in a flow of a first precursor gas and being substantially isolated from a flow of a second precursor gas. TheVPE system 200 is similar to the VPE system described in connection withFIG. 1 . TheVPE system 200 includes aprocess chamber 201 for containing process gasses. In addition, theVPE system 200 includes aplaten 202, which is a disk-shaped substrate carrier that supportssubstrates 204 for vapor phase epitaxy. - The
VPE system 200 includes agas injector 206 comprising multiple regions that are separated by physical barriers and/or chemical barriers. For example, theVPE system 200 can include afirst region 208 that is coupled to a firstprecursor gas source 210 and asecond region 212 that is coupled to a secondprecursor gas source 214. Any type of precursor gas can be used in the VPE system according to the present teachings. In various other embodiments, thegas injector 206 can include additional regions that are separated by physical barriers and/or chemical barriers that may or may not be coupled to additional precursor and/orinert gas sources 211. - As described herein, there are many possible gas injector designs that inject different precursor gases into different regions of the
process chamber 201. For example, in one embodiment that is described in connection withFIG. 3 , thefirst region 208 in thegas injector 206 is positioned in quadrants of a disk and asecond region 212 extends radially through the quadrants. In another embodiment that is described in connection withFIG. 4A , the first andsecond regions gas injector 206 include a plurality of first and second regions that alternate across at least a portion of thegas injector 206. In many practical embodiments, thegas injector 206 comprises liquid cooling channels to control a temperature of thegas injector 206. Afluid coolant supply 216 is coupled to liquid cooling channels in theflow injector 206 to circulate the cooling fluid in order to control the temperature of thegas injector 206. - In various embodiments, the
gas injector 206 is designed to flow the first and second precursor gases over theplaten 202 that supports thesubstrates 204 with either a laminar flow or a non-laminar flow. Also, in various embodiments, thegas injector 206 flows the first and second precursor gases in various directions relative to theplaten 202 that supports thesubstrates 204. For example, in some VPE systems according to the present invention, thegas injector 206 flows at least one of the first and second precursor gases in a direction that is perpendicular to the surface ofplaten 202 that supports thesubstrates 204. Also, in some VPE systems, thegas injector 206 flows at least one of the first and second precursor gases in a direction that is parallel to theplaten 202 that supports thesubstrates 204. In one particular, VPE system, thegas injector 206 flows one of the first and second precursor gases in a direction that is substantially parallel to theplaten 202 that supports thesubstrates 204 and the other of the first and second precursor gases through thegas injector 206 in a direction that is substantially perpendicular to theplaten 202 that supports thesubstrates 204. -
Electrodes first region 212 so that first precursor gas flows in contact with or in close proximity to theelectrodes electrodes electrodes electrodes electrodes electrodes gas injector 206 and theplaten 202 that supports thesubstrates 204 including in close proximity to thegas injector 206 and in close proximity to theplaten 202 that supports thesubstrates 204. - In various embodiments, the
electrodes electrodes VPE system 200. Also, in various embodiments, any type of electrode configuration can be used including any number of electrodes, which can include only one electrode. In addition, in various embodiments, theelectrodes VPE system 200 shows two different types of electrodes, a linear (straight)electrode 218 and anon-linear electrode 219, such as a coiled electrode or other structure that increases or maximizes the surface area of the electrode that is exposed to the first precursor gas. In many systems, the same type of electrode is used, but in some systems two or more different types of electrodes are used. - The
electrodes FIG. 2 , theelectrodes power supply 220 is electrically connected to theelectrodes power supply 220 generates a current that heats theelectrodes electrodes - One skilled in the art will appreciate that there are numerous ways of isolating the
electrodes gas injector 206 includes one ormore baffles 222 or other types of physical structure that physically separates thefirst region 208 from thesecond region 212 so as to isolate theelectrodes more baffles 222 are formed of non-thermally conductive materials so that the thermal profile in theprocess chamber 201 does not significantly change from thermal radiation emitted by thebaffles 222. In one embodiment, the one ormore baffles 222 are shaped to preserve laminar flow of at least one of the first and second precursor gases across theplaten 202 that supports thesubstrates 204. - In one embodiment, the
electrodes electrodes electrodes - A method of operating a vapor phase epitaxy system according to the present teachings includes injecting a first precursor gas for vapor phase epitaxy in the
first region 208 proximate to aplaten 202 supportingsubstrates 204 and injecting a second precursor gas for vapor phase epitaxy in asecond region 212 proximate to theplaten 202 supporting substrates. In one method, the first and second precursor gases are injected in a plurality of respective alternating first and second regions as described in connection withFIG. 4A . - Any type of VPE precursor gases can be used. For example, the first precursor gas can be a hydride precursor gas, such as NH3 and the second precursor gas can be an organometalic precursor gas, such as trimethyl gallium, that is used to grow GaN by VPE. Also, the first precursor gas can be a hydride precursor gas, such as NH3 and the second precursor gas can be a metal halide precursor gas, such as gallium chloride, that is used to grow GaN by VPE. In some methods, three precursor gases are used. For example in these methods, the first precursor gas can be a hydride precursor gas, such as NH3, and the second precursor gas can be an organometalic precursor gas, such as trimethyl gallium. The third precursor gas can be a halide precursor gas, such as HCl. With these three precursor gases, the halide precursor gas and the organometallic precursor gas react to form a metal halide. In methods using three precursor gases, the
gas injector 206 can include a third region for injecting the third precursor gas. Alternatively, the third precursor gas can be injected in the either the first or thesecond regions - The first and second precursor gases can be injected at any angle including perpendicular and parallel to the
platen 202 supportingsubstrates 204. The angle of injection for the second precursor gas can be the same as or different from the angle of injection of the first precursor gas. First precursor gas molecules flow in contact with or in close proximity to theelectrodes electrodes electrodes electrodes physical baffles 222. Thebaffles 222 can be performed so as to preserves laminar flow over theplaten 202 supportingsubstrates 204 as described in connection withFIG. 6 . - In methods using gas curtains, inert gases are injected in regions that isolate the
electrodes - The
power supply 220 generates a current that flows through theelectrodes electrodes heated electrodes - In some VPE systems according to the present teachings, the
electrodes gas injector 206 surface because it is far from theplaten 202 supporting thesubstrate 204 and, therefore, may not have enough thermal energy for decomposition. Using a catalytic electrode lowers the activation energy for decomposition and, therefore, increases the probability of NH3 decomposition even in regions of theprocess chamber 201 that have relatively low temperatures (i.e. regions close to thegas injector 206 away from the substrate). The catalytic electrode allows the reaction to proceed or, if the reaction was inclined to occur, to proceed more rapidly by lowering the activation energy of the reaction or having the reaction proceed through a different reaction pathway. In one VPE system according to the present teachings, the catalytic electrode is positioned proximate to the boundary layer region 126 (FIG. 1 ) so that the first precursor gas mixes with the second precursor gas shortly after the first precursor gas interacts with the catalytic electrode. - Other VPE systems according to the present teachings include a catalytic electrode that is not energized. This is a catalytic electrode that is not powered by a power supply and that uses only the catalytic material and ambient heat to enhance the catalytic reaction. In various VPE systems according to the present teachings, a catalytic electrode can be positioned anywhere in the
process chamber 201. In some of these VPE systems, the catalytic electrode is positioned proximate to theplaten 202. Catalytic electrodes positioned proximate to theplaten 202 can reach effective catalytic activity through secondary heating from theplaten 202 alone. - Slab-like streams of thermally activated first precursor gas molecules flow generally downstream toward the
platen 202 andsubstrates 204 in aflow region 224 of thereaction chamber 201 between thegas injector 206 and theplaten 202. In many methods according to the present teachings, the downward flow does not result in substantial mixing between separate streams of downwardly flowing gas. It is sometimes desirable to design and operate thesystem 200 so that there is laminar flow in theflow region 224. Theplaten 202 is rotated rapidly about theaxis 104 with therotary drive 106 so that the surface of theplaten 202 and the surfaces of thesubstrates 204 are moving rapidly. The rapid motion of theplaten 202 andsubstrates 204 entrains the gases into rotational motion aboutaxis 104. Consequently, the process gases flow radially away fromaxis 104, thereby causing the process gases in the various streams to mix with one another within a boundary layer that is schematically indicated inboundary layer region 126. The activated first precursor gas molecules and the second precursor gas molecules in the mixture within the boundary layer flow over the surface of thesubstrates 204, thereby reacting to form a VPE film. - In conventional VPE systems, precursor gasses are introduced into the
process chamber 201 at a relatively low temperature, and hence have low available energy, typically well below the energy required to induce rapid reaction of the reactants on the surface of thesubstrate 204. In conventional methods of VPE, there may be some heating of the reactants by radiant heat transfer as the reactants pass downstream from the inlet towards theboundary layer region 126. However, most of the heating, and hence most of the increase in available energy of the reactants, occurs within theboundary layer region 126. In these conventional VPE systems, substantially all of the heating depends upon the temperature of thesubstrate 204 andplaten 202. - In VPE systems according to the present teachings, substantial energy is supplied to at least one precursor gas other than energy applied by heat transfer from the substrate, platen, and chamber walls. The location where the energy is applied can be controlled. For example, by applying the energy to the first precursor gas near the transition between the flow region 124 (
FIG. 1 ) and theboundary layer region 126, the time between the moment when a given portion of a first precursor gas reaches a high available energy and the time when that portion encounters the substrate surface can be minimized. Such control can help to minimize undesired side reactions. For example, ammonia having high available energy may spontaneously decompose into species such as NH2 and NH, and then these species in turn may decompose to monatomic nitrogen, which very rapidly forms N2. Nitrogen is essentially unavailable for reaction with a metal organic. By applying the energy to the ammonia just before or just as the ammonia enters the boundary layer, the desired reactions which deposit the semiconductor at the surface, such as reaction of the excited NH3 with the metal organic or reaction of NH2 or NH species with the metal organic at the substrate surface can be enhanced, whereas the undesirable side reaction can be suppressed. - Thus, one feature of the present teachings is that by using the electrodes according to the present invention, the operator has the ability to control the available energy of at least one precursor gas independently of the temperature of the
substrates 204. Thus, the available energy of at least one precursor gas in the boundary layer region 126 (FIG. 1 ) can be increased without increasing the temperature of thesubstrates 204 and theplaten 202. Conversely, thesubstrates 204 and theplaten 202 can be maintained at a lower temperature while still maintaining an acceptable level of available energy. -
FIG. 3 illustrates a top-view of one embodiment of a disk-shapedgas injector 300 according to the present teaching which includes afirst region 302 that is positioned in quadrants of thegas injector 300 and asecond region 304 extending radially through the quadrants. The top-view shown inFIG. 3 is presented looking upstream toward the precursor gas inlets in thegas injector 300. The disk-shapedgas injector 300 includes mechanical orchemical barriers 305 that isolate the first andsecond regions chemical barriers 305 can be physical structures, such as baffles and/or gas curtains that inject inert gases to isolate the first andsecond regions -
FIG. 3 showselectrodes electrodes first region 302. In some embodiments, each of theelectrodes electrodes FIG. 2 ). In various embodiments, the electrodes can be linear (straight) electrodes or non-linear electrodes, such as coiled electrodes or other structures that increases or maximizes the surface area of theelectrodes - In many systems, the same type of electrode is used throughout the
first region 302, but in some systems two or more different types of electrodes are used in different positions in thefirst region 302. For example, the type of electrode near the second region 304 (at the edges of the first region 302) can be different from the type of electrode in the middle of thefirst region 302. For the purpose of illustrating the positioning of different types of electrodes,FIG. 3 shows a first type ofelectrode 306, which can be either linear or non-linear, positioned in the plane of the first precursor gas flow. In addition,FIG. 3 shows a second type ofelectrode 308 positioned in the plane of thegas injector 300.FIG. 3 shows the second type ofelectrode 308 in a linear pattern. However, it should be understood that the second type of electrode can also be formed in a non-linear pattern, such as a coil. - The
electrodes second region 304 so that the chemical potential of the second precursor is not changed based on its proximity to theelectrodes electrodes FIG. 2 ). In other words, the second precursor gas does not have to be injected below the first precursor gas in theprocess chamber 201 to avoid activation. Injecting both the first and the second precursor gases at the same level in theprocess chamber 201 is important in many VPE processes because such injection can achieve laminar flow over large areas in vertical flow VPE process chambers. Laminar flow is desirable for many VPE processes because it improves uniformity. - Methods of operating VPE systems comprising the
gas injector 300 ofFIG. 3 include injecting the first precursor gas in the quadrants of thefirst region 302 so that first precursor gas molecules contact theelectrodes electrodes FIG. 2 ) so that they thermally activate the first precursor gas molecules. For example, the first precursor gas can be a hydride precursor gas precursor gas admixture with a carrier gas. The second precursor gas is injected in thesecond region 304 adjacent to theelectrodes electrodes FIG. 2 ), thereby reacting to form a VPE film. -
FIG. 4A illustrates a cross-section of one embodiment of a disk-shapedgas injector 400 according to the present teaching that includes a plurality of first andsecond regions gas injector 400. The top-view shown inFIG. 4A is presented looking upstream toward the precursor gas inlets in thegas injector 400. The plurality offirst regions 402 includes gas inlets for injecting hydride or halide precursor gases with a carrier gas. The plurality ofsecond regions 404 includes gas inlets for injecting organometallic gases with a carrier gas. - In many VPE systems according to the present teachings, the area of the
first regions 402 is larger than the area of thesecond regions 404. The flow rates of the first and second precursor gases and of the carrier gases during operation can be adjusted for the particular dimensions of the first and thesecond regions FIG. 2 ) being processed. - The
gas injector 400 includes a plurality ofelectrodes first regions 402. In many VPE systems according to the present invention, the plurality ofelectrodes first region 402 or as far from the flow of the second precursor gas as possible so as to minimize the activation of second precursor gas molecules with theelectrodes FIG. 4A illustrateselectrodes first regions 402 for clarity. In many VPE systems according to the present teachings,electrodes first regions 402. In some embodiments, each of theelectrodes electrodes FIG. 2 ). In various embodiments, theelectrodes electrodes - In many systems, the same type of electrode is used throughout the
first region 402, but in some systems two or more different types of electrodes are used in different positions in thefirst region 402. For the purpose of illustrating the positioning of different types of electrodes,FIG. 4A shows a first type ofelectrode 406, which can be either linear or non-linear, positioned in the plane of the first precursor gas flow. In addition,FIG. 4A shows a second type ofelectrode 408 positioned in the plane of thegas injector 400.FIG. 4A shows the second type ofelectrode 408 as a non-linear electrode that can also be coiled. However, it should be understood that the second type ofelectrode 408 can also be a linear electrode. -
FIG. 4B illustrates an expanded view of the disk-shapedgas injector 400 illustrating mechanical orchemical barriers 405 that isolate the electrodes 406 (FIG. 4A ), 408 from the second precursor gas. The mechanical orchemical barriers 405 isolate theelectrodes first region 402 from the precursor gas flowing in thesecond region 404. As described herein, thebarriers 405 can be a physical structure, such as baffle. In addition, thebarriers 405 can be a gas curtains that inject inert gases between the first andsecond regions - Methods of operating VPE systems comprising the
gas injector 400 ofFIGS. 4A and 4B include injecting the first precursor gas in the plurality offirst regions 402 so that first precursor gas molecules contact theelectrodes electrodes FIG. 2 ) so that they thermally activate the first precursor gas molecules. For example, the first precursor gas can be a hydride precursor gas admixture with a carrier gas that is thermally activated when it flows in contact with theelectrodes second regions 404. For example, the second precursor gas can be an organometallic admixture with a carrier gas. Process conditions are chosen so that the second precursor gas does not flow close enough to theelectrodes electrodes FIG. 2 ), thereby reacting to form a VPE film. -
FIG. 5 illustrates a perspective top-view of aVPE system 500 according to the present teachings that includes a horizontalflow gas injector 502. TheVPE system 500 is similar to theVPE system 200 that was described in connection withFIG. 2 . However, theVPE system 500 includescircular gas injectors - In the embodiment shown in
FIG. 5 , the firstcircular gas injector 504 is coupled to a firstprecursor gas source 512. The secondcircular gas injector 506 is coupled to aninert gas source 514. The thirdcircular gas injector 508 is coupled to a secondprecursor gas source 516. In some VPE systems according to the present teachings, the first and thirdcircular gas injectors circular gas injector 504 injects the first precursor gas in a firsthorizontal region 518. The thirdcircular gas injector 508 injects the second precursor gas in a secondhorizontal region 520. - A
circular electrode 522 is positioned in the firsthorizontal region 518 so that first precursor gas molecules flow in contact with or proximate to thecircular electrode 522. A physical or chemical barrier can be positioned between the first and the secondhorizontal regions circular electrode 522 from the flow of the second precursor gas molecules. In some systems according to the present teachings, a baffle is positioned above thecircular electrode 522 to substantially prevent the first precursor gas molecules from being thermally activated by theelectrode 522 as they flow to theplaten 510. - In some systems according to the present teachings, a gas curtain is used to separate the first and the second
horizontal regions circular gas injector 506 injects inert gas between the first and the secondhorizontal regions circular electrode 522. - Methods of operating the
VPE system 500 ofFIG. 5 include injecting the first precursor gas with the firstcircular gas injectors 504 and injecting the second precursor gas with the thirdcircular gas injectors 508. An inert gas is injected between the first and the secondhorizontal regions circular gas injectors 506 to form a chemical barrier that prevents the second precursor gas molecules from being activated by thecircular electrode 522. When thecircular electrode 522 is powered by a power supply 220 (FIG. 2 ), thecircular electrode 522 thermally activates first precursor gas molecules injected by the firstcircular gas injector 504 that flow in contact with or in close proximity to thecircular electrode 522. The activated first precursor gas molecules and the second precursor gas molecules then flow over the surface of thesubstrates 524, thereby reacting to form a VPE film. -
FIG. 6 illustrates a foil-shapedelectrode 600 positioned close to the surface of theplaten 602 for thermally activating a precursor gas in a VPE system according to the present teaching. Theelectrode 600 is positioned close to the surface of theplaten 602 andsubstrate 604 being processed. Theelectrode 600 shown inFIG. 6 is shaped as an airfoil in order to provide a laminar or near laminar flow of precursor gases across the surface of thesubstrate 604. In addition, in embodiments where theelectrode 600 is formed of a catalytic material, theelectrode 600 can be shaped to provide a relatively large surface area for the catalytic reaction. - While the applicant's teaching are described in conjunction with various embodiments, it is not intended that the applicant's teaching be limited to such embodiments. On the contrary, the applicant's teaching encompass various alternatives, modifications, and equivalents, as will be appreciated by those of skill in the art, which may be made therein without departing from the spirit and scope of the teaching.
Claims (37)
1. A vapor phase epitaxy system comprising:
a. a platen that supports substrates for vapor phase epitaxy;
b. a gas injector comprising a first region that is coupled to a first precursor gas source and a second region that is coupled to a second precursor gas source, the gas injector injecting the first precursor gas into the first region and injecting the second precursor gas into the second region;
c. at least one electrode that is positioned in the first region so that first precursor gas molecules flow proximate to the at least one electrode and positioned to be substantially isolated from a flow of the second precursor gas; and
d. a power supply having an output that is electrically connected to the at least one electrode, the power supply generating a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.
2. The system of claim 1 wherein the gas injector comprises liquid cooling channels to control a temperature of the gas injector.
3. The system of claim 1 wherein the first and second regions in the gas injector comprise a plurality of first and second regions that alternate across at least a portion of the gas injector.
4. The system of claim 1 wherein at least one of the first and second precursor gases flows through the gas injector in a direction that is perpendicular to the platen that supports the substrates.
5. The system of claim 1 wherein at least one of the first and second precursor gases flows through the gas injector in a direction that is parallel to the platen that supports the substrates.
6. The system of claim 1 wherein one of the first and second precursor gases flow through the gas injector in a direction that is substantially parallel to the platen that supports the substrates and the other of the first and second precursor gases flow through the gas injector in a direction that is substantially perpendicular to the platen that supports the substrates.
7. The system of claim 1 wherein the gas injector flows the first and second precursor gases over the platen with a laminar flow.
8. The system of claim 1 wherein the gas injector flows the first and second precursor gas over the platen with a non-laminar flow.
9. The system of claim 1 wherein the gas injector further comprises a baffle that physically separates the first and the second regions.
10. The system of claim 9 wherein the baffle is shaped to preserve laminar flow of the first and second precursor gases across the platen that supports the substrates.
11. The system of claim 9 wherein the baffle is formed of a non-thermally conductive material.
12. The system of claim 1 wherein the at least one electrode is formed of a catalytic material.
13. The system of claim 12 wherein the catalytic material comprises at least one of tungsten, rhenium, and molybdenum.
14. The system of claim 1 further comprising a catalytic electrode positioned proximate to the platen.
15. The system of claim 1 wherein the electrode is formed in a non-linear structure.
16. The system of claim 1 wherein the electrode is oriented in a plane of the gas injector.
17. The system of claim 1 wherein the electrode is oriented in a plane that is perpendicular to the gas injector.
18. The system of claim 1 wherein the electrode is positioned proximate to the platen.
19. A method of vapor phase epitaxy, the method comprising:
a. injecting a first precursor gas for vapor phase epitaxy in a first region proximate to a platen supporting substrates;
b. injecting a second precursor gas for vapor phase epitaxy in a second region proximate to the platen supporting substrates;
c. positioning an electrode in a flow of the injected first precursor gas;
d. isolating the electrode from a flow of the injected second precursor gas; and
e. activating the first precursor gas with the electrode.
20. (canceled)
21. (canceled)
22. (canceled)
23. (canceled)
24. (canceled)
25. (canceled)
26. (canceled)
27. (canceled)
28. (canceled)
29. (canceled)
30. (canceled)
31. (canceled)
32. A vapor phase epitaxy system comprising:
a. a means for injecting a first precursor gas for vapor phase epitaxy in a first region proximate to a platen supporting substrates;
b. a means for injecting a second precursor gas for vapor phase epitaxy in a second region proximate to the platen supporting substrates;
c. an electrode positioned in a flow of the injected first precursor gas;
d. a means for isolating the electrode from a flow of the injected second precursor gas; and
e. a means for activating the first precursor gas with the electrode.
33. (canceled)
34. (canceled)
35. (canceled)
36. (canceled)
37. (canceled)
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US13/121,371 US20110174213A1 (en) | 2008-10-03 | 2009-10-01 | Vapor Phase Epitaxy System |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19509308P | 2008-10-03 | 2008-10-03 | |
US61/195093 | 2008-10-03 | ||
US13/121,371 US20110174213A1 (en) | 2008-10-03 | 2009-10-01 | Vapor Phase Epitaxy System |
PCT/US2009/059301 WO2010040011A2 (en) | 2008-10-03 | 2009-10-01 | Vapor phase epitaxy system |
Publications (1)
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Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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US12/572,245 Abandoned US20100086703A1 (en) | 2008-10-03 | 2009-10-01 | Vapor Phase Epitaxy System |
US13/121,371 Abandoned US20110174213A1 (en) | 2008-10-03 | 2009-10-01 | Vapor Phase Epitaxy System |
US12/587,228 Expired - Fee Related US8815709B2 (en) | 2008-10-03 | 2009-10-02 | Chemical vapor deposition with energy input |
US14/330,433 Abandoned US20140318453A1 (en) | 2008-10-03 | 2014-07-14 | Chemical vapor deposition with energy input |
Family Applications Before (1)
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US12/572,245 Abandoned US20100086703A1 (en) | 2008-10-03 | 2009-10-01 | Vapor Phase Epitaxy System |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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US12/587,228 Expired - Fee Related US8815709B2 (en) | 2008-10-03 | 2009-10-02 | Chemical vapor deposition with energy input |
US14/330,433 Abandoned US20140318453A1 (en) | 2008-10-03 | 2014-07-14 | Chemical vapor deposition with energy input |
Country Status (8)
Country | Link |
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US (4) | US20100086703A1 (en) |
EP (2) | EP2332167A4 (en) |
JP (2) | JP2012504873A (en) |
KR (2) | KR20110079831A (en) |
CN (2) | CN102171795A (en) |
SG (1) | SG194408A1 (en) |
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Families Citing this family (291)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009049020A2 (en) | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20110073039A1 (en) * | 2009-09-28 | 2011-03-31 | Ron Colvin | Semiconductor deposition system and method |
EP2543063B1 (en) * | 2010-03-03 | 2019-05-08 | Veeco Instruments Inc. | Wafer carrier with sloped edge |
TWI390074B (en) * | 2010-04-29 | 2013-03-21 | Chi Mei Lighting Tech Corp | Metal-organic chemical vapor deposition apparatus |
US10138551B2 (en) | 2010-07-29 | 2018-11-27 | GES Associates LLC | Substrate processing apparatuses and systems |
TW201222636A (en) * | 2010-07-30 | 2012-06-01 | Lawrence Advanced Semiconductor Technologies Llc | Systems, apparatuses, and methods for chemically processing substrates using the Coanda effect |
DE102011002145B4 (en) | 2011-04-18 | 2023-02-09 | Aixtron Se | Device and method for large-area deposition of semiconductor layers with gas-separated HCl feed |
DE102011002146B4 (en) | 2011-04-18 | 2023-03-09 | Aixtron Se | Apparatus and method for depositing semiconductor layers with HCI addition to suppress parasitic growth |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
CN103361633B (en) * | 2012-04-01 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device, reaction cavity and plasma processing equipment |
EP2872668B1 (en) * | 2012-07-13 | 2018-09-19 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
TWI502096B (en) * | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | Reaction device and manufacture method for chemical vapor deposition |
US9435031B2 (en) | 2014-01-07 | 2016-09-06 | International Business Machines Corporation | Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US20150361582A1 (en) * | 2014-06-17 | 2015-12-17 | Veeco Instruments, Inc. | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
CN106282969B (en) * | 2015-06-02 | 2019-02-15 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and its deposition method |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10865477B2 (en) * | 2016-02-08 | 2020-12-15 | Illinois Tool Works Inc. | Method and system for the localized deposit of metal on a surface |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
JP6665726B2 (en) * | 2016-08-01 | 2020-03-13 | 東京エレクトロン株式会社 | Film forming equipment |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) * | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10357920B2 (en) * | 2017-01-17 | 2019-07-23 | Obsidian Advanced Manufacturing, Llc | Gas phase integrated multimaterial printhead for additive manufacturing |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
TWI779134B (en) | 2017-11-27 | 2022-10-01 | 荷蘭商Asm智慧財產控股私人有限公司 | A storage device for storing wafer cassettes and a batch furnace assembly |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (en) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing a gap fill layer by plasma assisted deposition |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TWI816783B (en) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
CN112292477A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
TWI751420B (en) | 2018-06-29 | 2022-01-01 | 荷蘭商Asm知識產權私人控股有限公司 | Thin-film deposition method |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TW202405220A (en) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
JP7509548B2 (en) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | Cyclic deposition method and apparatus for filling recesses formed in a substrate surface - Patents.com |
TW202044325A (en) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
TWI838458B (en) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP2020133004A (en) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Base material processing apparatus and method for processing base material |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
CN112635282A (en) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | Substrate processing apparatus having connection plate and substrate processing method |
KR20210042810A (en) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
TW202142733A (en) | 2020-01-06 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | Reactor system, lift pin, and processing method |
TW202140135A (en) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Gas supply assembly and valve plate assembly |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
TW202203344A (en) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | System dedicated for parts cleaning |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
CN113394086A (en) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | Method for producing a layer structure having a target topological profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202140831A (en) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride–containing layer and structure comprising the same |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
TW202147383A (en) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202200837A (en) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Reaction system for forming thin film on substrate |
CN111678885A (en) * | 2020-05-29 | 2020-09-18 | 清华大学 | Chemical reaction observation system and method |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
TW202202649A (en) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235649A (en) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for filling a gap and related systems and devices |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
KR102491498B1 (en) * | 2021-12-06 | 2023-01-27 | 한국세라믹기술원 | MANUFACTURING APPARATUS AND METHOD OF HIGH QUALITY β-Ga2O3 THIN FILM GROWN BY HALIDE VAPOR PHASE EPITAXY GROWTH |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
JP2003347222A (en) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Cat-PECVD METHOD, FILM FORMED BY THE SAME AND THIN FILM DEVICE HAVING THE FILM |
US20060275546A1 (en) * | 2005-06-02 | 2006-12-07 | Arena Chantal J | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61231715A (en) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | Photo processor |
US4868014A (en) * | 1986-01-14 | 1989-09-19 | Canon Kabushiki Kaisha | Method for forming thin film multi-layer structure member |
US4838014A (en) * | 1986-03-31 | 1989-06-13 | Ford New Holland, Inc. | Disc cutter rotor assembly |
JPH0744154B2 (en) * | 1987-12-16 | 1995-05-15 | 株式会社豊田中央研究所 | Light irradiation type low temperature MOCVD method and apparatus |
US5261959A (en) * | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
JPH0355827A (en) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | Photo excited epitaxial growth device |
DE3935865C1 (en) * | 1989-10-27 | 1990-10-04 | Philips Patentverwaltung Gmbh, 2000 Hamburg, De | |
JP2822536B2 (en) | 1990-02-14 | 1998-11-11 | 住友電気工業株式会社 | Method for forming cubic boron nitride thin film |
US5079038A (en) * | 1990-10-05 | 1992-01-07 | The United States Of America As Represented By The United States Department Of Energy | Hot filament CVD of boron nitride films |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US5856695A (en) * | 1991-10-30 | 1999-01-05 | Harris Corporation | BiCMOS devices |
KR0130955B1 (en) * | 1992-10-07 | 1998-04-14 | 쓰지 하루오 | Fabrication of a thin film transistor & production of liquid crystal display apparatus |
JPH086181B2 (en) * | 1992-11-30 | 1996-01-24 | 日本電気株式会社 | Chemical vapor deposition method and chemical vapor deposition apparatus |
US5433977A (en) * | 1993-05-21 | 1995-07-18 | Trustees Of Boston University | Enhanced adherence of diamond coatings by combustion flame CVD |
TW264601B (en) * | 1993-09-17 | 1995-12-01 | Hitachi Seisakusyo Kk | |
JP3468859B2 (en) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | Gas phase processing apparatus and gas phase processing method |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
JP3737221B2 (en) * | 1996-09-06 | 2006-01-18 | 英樹 松村 | Thin film forming method and thin film forming apparatus |
JPH10172473A (en) * | 1996-12-12 | 1998-06-26 | Toshiba Corp | Deflection yoke device |
US5820922A (en) * | 1996-12-17 | 1998-10-13 | Sandia Corporation | Method for localized deposition of noble metal catalysts with control of morphology |
US6066204A (en) * | 1997-01-08 | 2000-05-23 | Bandwidth Semiconductor, Llc | High pressure MOCVD reactor system |
JPH10226599A (en) * | 1997-02-12 | 1998-08-25 | Sharp Corp | Vapor phase epitaxial growth system |
ATE350510T1 (en) * | 1997-06-13 | 2007-01-15 | Oerlikon Trading Ag | METHOD AND SYSTEM FOR PRODUCING COATED WORKPIECES |
US6161499A (en) * | 1997-07-07 | 2000-12-19 | Cvd Diamond Corporation | Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
US6194036B1 (en) * | 1997-10-20 | 2001-02-27 | The Regents Of The University Of California | Deposition of coatings using an atmospheric pressure plasma jet |
JP4556329B2 (en) * | 1999-04-20 | 2010-10-06 | ソニー株式会社 | Thin film forming equipment |
ATE259432T1 (en) | 1999-05-13 | 2004-02-15 | Emf Ireland Ltd | METHOD AND DEVICE FOR EPITACTICALLY GROWING A MATERIAL ON A SUBSTRATE |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
WO2000070117A1 (en) * | 1999-05-14 | 2000-11-23 | The Regents Of The University Of California | Low-temperature compatible wide-pressure-range plasma flow device |
US6582780B1 (en) * | 1999-08-30 | 2003-06-24 | Si Diamond Technology, Inc. | Substrate support for use in a hot filament chemical vapor deposition chamber |
US6745717B2 (en) * | 2000-06-22 | 2004-06-08 | Arizona Board Of Regents | Method and apparatus for preparing nitride semiconductor surfaces |
KR101004199B1 (en) * | 2001-02-09 | 2010-12-24 | 도쿄엘렉트론가부시키가이샤 | Film forming device |
KR100402389B1 (en) * | 2001-03-23 | 2003-10-17 | 삼성전자주식회사 | Method of forming a metal gate |
KR100425449B1 (en) * | 2001-05-18 | 2004-03-30 | 삼성전자주식회사 | Method and apparatus for forming multiple layers of thin film by using photolysis chemical vapor deposition |
US6638839B2 (en) * | 2001-07-26 | 2003-10-28 | The University Of Toledo | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets |
US6677250B2 (en) * | 2001-08-17 | 2004-01-13 | Micron Technology, Inc. | CVD apparatuses and methods of forming a layer over a semiconductor substrate |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
JP2004103745A (en) * | 2002-09-06 | 2004-04-02 | Japan Science & Technology Corp | Epitaxial growth method for nitride semiconductor film by hot wire cvd method |
JP3809410B2 (en) * | 2002-09-19 | 2006-08-16 | 独立行政法人科学技術振興機構 | Photochemical vapor deposition apparatus and method |
JP2004165445A (en) * | 2002-11-13 | 2004-06-10 | Furukawa Co Ltd | Semiconductor manufacturing arrangement |
WO2004092443A1 (en) * | 2003-04-16 | 2004-10-28 | Toyo Seikan Kaisha Ltd. | Microwave plasma processing method |
JP2005089781A (en) * | 2003-09-12 | 2005-04-07 | Mitsui Eng & Shipbuild Co Ltd | Thin film deposition system |
US7311947B2 (en) * | 2003-10-10 | 2007-12-25 | Micron Technology, Inc. | Laser assisted material deposition |
KR100513920B1 (en) * | 2003-10-31 | 2005-09-08 | 주식회사 시스넥스 | Chemical vapor deposition unit |
JP4493379B2 (en) | 2003-11-26 | 2010-06-30 | 京セラ株式会社 | Heating element CVD equipment |
GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
US8298624B2 (en) | 2004-09-27 | 2012-10-30 | Gallium Enterprises Pty Ltd. | Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film |
DE102004052044A1 (en) * | 2004-10-26 | 2006-04-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Incandescent lamp with a luminous body containing a high temperature resistant metal compound |
JP2006173242A (en) * | 2004-12-14 | 2006-06-29 | Sharp Corp | Catalyst contact radical creation equipment, semiconductor device and liquid crystal display |
US20060156983A1 (en) * | 2005-01-19 | 2006-07-20 | Surfx Technologies Llc | Low temperature, atmospheric pressure plasma generation and applications |
JP5214251B2 (en) | 2005-02-28 | 2013-06-19 | スルザー メテコ アーゲー | Equipment for high density low energy plasma vapor phase epitaxy. |
JP2006251025A (en) * | 2005-03-08 | 2006-09-21 | Canon Inc | Heating apparatus |
EP1916704A4 (en) | 2005-08-05 | 2011-06-08 | Sekisui Chemical Co Ltd | Method for forming film of group iii nitride such as gallium nitride |
US7842355B2 (en) * | 2005-11-01 | 2010-11-30 | Applied Materials, Inc. | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
US8187679B2 (en) * | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
WO2008023523A1 (en) | 2006-08-22 | 2008-02-28 | National Institute Of Advanced Industrial Science And Technology | Method of forming thin film by microplasma processing and apparatus for the same |
JP2008124060A (en) | 2006-11-08 | 2008-05-29 | Showa Denko Kk | Group iii nitride compound semiconductor light-emitting element and manufacturing method thereof, and lamp |
US20080185039A1 (en) | 2007-02-02 | 2008-08-07 | Hing Wah Chan | Conductor fabrication for optical element |
US20080241377A1 (en) * | 2007-03-29 | 2008-10-02 | Tokyo Electron Limited | Vapor deposition system and method of operating |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
GB0805837D0 (en) | 2008-03-31 | 2008-06-04 | Qinetiq Ltd | Chemical Vapour Deposition Process |
US20100006023A1 (en) * | 2008-07-11 | 2010-01-14 | Palo Alto Research Center Incorporated | Method For Preparing Films And Devices Under High Nitrogen Chemical Potential |
US20120315405A1 (en) | 2010-02-26 | 2012-12-13 | Alliance For Sustainable Energy, Llc | Hot wire chemical vapor depostion (hwcvd) with carbide filaments |
-
2009
- 2009-10-01 JP JP2011530254A patent/JP2012504873A/en not_active Ceased
- 2009-10-01 US US12/572,245 patent/US20100086703A1/en not_active Abandoned
- 2009-10-01 KR KR1020117010037A patent/KR20110079831A/en not_active Application Discontinuation
- 2009-10-01 WO PCT/US2009/059301 patent/WO2010040011A2/en active Application Filing
- 2009-10-01 US US13/121,371 patent/US20110174213A1/en not_active Abandoned
- 2009-10-01 EP EP09818541A patent/EP2332167A4/en not_active Withdrawn
- 2009-10-01 CN CN2009801388524A patent/CN102171795A/en active Pending
- 2009-10-02 KR KR1020117010163A patent/KR20110074899A/en not_active Application Discontinuation
- 2009-10-02 WO PCT/US2009/005427 patent/WO2010039252A1/en active Application Filing
- 2009-10-02 TW TW098133511A patent/TWI429791B/en not_active IP Right Cessation
- 2009-10-02 TW TW098133650A patent/TWI411700B/en not_active IP Right Cessation
- 2009-10-02 EP EP09789390A patent/EP2347028A1/en not_active Withdrawn
- 2009-10-02 US US12/587,228 patent/US8815709B2/en not_active Expired - Fee Related
- 2009-10-02 CN CN2009801486885A patent/CN102239277B/en not_active Expired - Fee Related
- 2009-10-02 SG SG2013074513A patent/SG194408A1/en unknown
- 2009-10-02 JP JP2011530055A patent/JP5587325B2/en not_active Expired - Fee Related
-
2014
- 2014-07-14 US US14/330,433 patent/US20140318453A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
JP2003347222A (en) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Cat-PECVD METHOD, FILM FORMED BY THE SAME AND THIN FILM DEVICE HAVING THE FILM |
US20060275546A1 (en) * | 2005-06-02 | 2006-12-07 | Arena Chantal J | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
Also Published As
Publication number | Publication date |
---|---|
TWI411700B (en) | 2013-10-11 |
US20100086703A1 (en) | 2010-04-08 |
EP2332167A2 (en) | 2011-06-15 |
US20100087050A1 (en) | 2010-04-08 |
KR20110074899A (en) | 2011-07-04 |
TW201026887A (en) | 2010-07-16 |
JP2012504866A (en) | 2012-02-23 |
CN102171795A (en) | 2011-08-31 |
WO2010040011A3 (en) | 2010-07-01 |
SG194408A1 (en) | 2013-11-29 |
EP2347028A1 (en) | 2011-07-27 |
US20140318453A1 (en) | 2014-10-30 |
JP2012504873A (en) | 2012-02-23 |
CN102239277A (en) | 2011-11-09 |
WO2010039252A1 (en) | 2010-04-08 |
JP5587325B2 (en) | 2014-09-10 |
WO2010040011A2 (en) | 2010-04-08 |
KR20110079831A (en) | 2011-07-08 |
TWI429791B (en) | 2014-03-11 |
CN102239277B (en) | 2013-10-23 |
US8815709B2 (en) | 2014-08-26 |
EP2332167A4 (en) | 2012-06-20 |
TW201022488A (en) | 2010-06-16 |
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