CN106282969B - Chemical vapor deposition unit and its deposition method - Google Patents

Chemical vapor deposition unit and its deposition method Download PDF

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Publication number
CN106282969B
CN106282969B CN201510294433.7A CN201510294433A CN106282969B CN 106282969 B CN106282969 B CN 106282969B CN 201510294433 A CN201510294433 A CN 201510294433A CN 106282969 B CN106282969 B CN 106282969B
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gas
discharge air
substrate tray
substrate
reaction
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CN106282969A (en
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幸沛锦
杜志游
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to TW105116101A priority patent/TWI612171B/en
Publication of CN106282969A publication Critical patent/CN106282969A/en
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Abstract

The invention discloses a kind of chemical vapour deposition reaction devices, it include: reaction chamber, inside setting substrate tray and rotary shaft, substrate tray is to support several substrates, inlet duct, above the substrate bearing device, for providing the reaction gas for flowing to substrate surface, a conversion zone is formed between the inlet duct and the substrate bearing device；Central discharge air system is arranged in substrate bearing device central area；Around the substrate bearing device, ring edge exhaust system is set；The reaction gas and side reaction gas of the every substrate surface are discharged outside reaction chamber through central discharge air system and edge exhaust system simultaneously.The present invention can effectively adjust the film deposition yield and uniformity of substrate surface.

Description

Chemical vapor deposition unit and its deposition method
Technical field
The present invention relates to a kind of device in deposition on substrate film, more particularly to one kind are raw in deposition on substrate or extension Grow tall the reaction chamber and deposition method of yield and homogeneity film.
Background technique
As one of iii-v film, gallium nitride (GaN) is that one kind is widely used in manufacturing blue light, purple light and white The material of optical diode, ultraviolet detector and high power microwave transistors.Since GaN is suitable for the low of a large amount of purposes in manufacture There is practical and potential purposes, the growth of GaN film is greatly paid close attention in power consumption device (e.g., LED).
Iii-v film including GaN film can be grown in a number of different manners, including molecular beam epitaxy (MBE) method, hydride vapor stage extension (HVPE) method, Metal Organic Chemical Vapor Deposition (MOCVD) method etc..Mesh Before, mocvd method is used to the preferred deposition method that production LED obtains the film of enough quality.
MOCVD is Metal Organic Chemical Vapor Deposition (Metal-organic Chemical Vapor Deposition english abbreviation).MOCVD technique is usually at one with the reaction chamber or reaction chamber under temperature controlled environment Interior progress.In general, by the first precursor gases and a second nitrogenous precursor gas comprising group iii-v element (such as gallium (Ga)) Body (such as ammonia (NH3)), which is passed into reaction chamber, to react to form GaN film on substrate.One current-carrying gas (carrier Gas) can also be used to assist above transport precursor gases to substrate.These precursor gases are in the substrate surface mixing being heated Reaction, and then form group iii-v nitride film (such as GaN film) and be deposited on substrate surface.
In order to improve the handling capacity (throughput) of production capacity and film growth apparatus, the reaction chamber of MOCVD process units The size of interior substrate support seat (substrate holder) is increasing, is placed more and more substrates, example above Such as, 42 2 inches of substrate can be placed in a reaction chamber or places 11 4 inches of substrate, or places 66 inches Substrate.Production capacity and productivity no doubt can be improved in such setting, but will lead to the non-uniform problem of deposited film.With One quantity for reacting indoor substrate and diameter become increasing, this problem more highlights.
Figure 10 is a kind of reaction chamber 600 of MOCVD process units of the prior art.Substrate support seat in reaction chamber 600 Several substrate W1, W2 are placed on 400.The lower section of reaction chamber 600 is provided with exhaust apparatus 800.In the process of the prior art In the process, exhaust system is arranged around substrate support seat, and reaction gas is transported to base from the top of reaction chamber 600 along path 900 The surface of piece support base 400, further along substrate support seat 400 surface reach substrate support seat 400 outer edge (along Path 902), the inside of reaction chamber 600 is finally discharged by exhaust apparatus 800 along path 904.It is thin due to MOCVD process units The rate of film growth, quality, caliper uniformity are all consumingly influenced by reaction gas transportational process and path, it can be seen that When the radius of substrate support seat 400 becomes increasing, the substrate quantity that is accommodated on substrate support seat 400 with regard to more and more or Person's size is increasing, and path 902 will become more and more longer, is just less susceptible to make on the surface of substrate support seat 400 All substrates obtain equably film and deposit.
In addition to this, in order to improve output, the size of substrate tray becomes increasing, to place more substrates, As the size of substrate tray is increasing, the substrate being placed above is more and more, substrate tray when rotating at high speed, substrate The centrifugal force of pallet is increasing, and the linear velocity at substrate tray edge is caused to become larger, the edge surface and reaction gas of substrate tray The relative velocity of body becomes larger, therefore, in actual process, substrate tray edge substrate growth can generate crystal defect (such as: Line defect), or the non-uniform phenomenon of deposition, so that product yield declines.To solve the above-mentioned problems, in the prior art, have People proposes film or crystal growth that single substrate is carried out using single reaction chamber.Intracavitary in the single reaction, substrate tray is centered Ground is set in reaction chamber, and gas input device is set to above substrate tray, only placed above substrate tray a piece of substrate into Row process, exhaust apparatus setting is in reaction chamber bottom, to improve the yield of substrate membrane or crystal growth and deposit uniform Property.But the device greatly reduces output (throughput) and production efficiency.
Therefore, in the prior art, improve productivity and improve product yield and constitute the conflict for being difficult to overcome.
Summary of the invention
The technical problem to be solved by the present invention is to how same on the intracavitary single substrate tray of chemical vapour deposition reaction When handle more substrate to realize high output and productivity, while can guarantee the film or crystal growth of each substrate Yield and deposition uniformity.
In order to solve the above technical problem, the present invention provides a kind of chemical vapour deposition reaction devices, comprising:
Reaction chamber, inside setting support substrate tray, support and the rotation for driving the substrate tray rotation of several substrates Shaft, the opening of the upper and lower surface of at least one perforation substrate tray of central area setting of the substrate tray；Air inlet dress It sets, is located above the substrate tray, for providing the reaction gas for flowing to substrate surface, the inlet duct and the substrate A conversion zone is formed between pallet；A central discharge air system, the center row is arranged in central area inside the reaction chamber Gas system is located at below the opening of the substrate tray, and with the opening fluid communication；Around the substrate tray and rotation An edge exhaust system is arranged in axis periphery；Wherein, by the reaction gas of the substrate surface and side reaction gas simultaneously via Outside the central discharge air system and edge exhaust system discharge reaction chamber.
Optionally, the central discharge air system and edge exhaust system are separately connected an exhaust apparatus, the two exhausts dress It sets and is vented for independent control central discharge air system and edge exhaust system.
Optionally, the central discharge air system connects same exhaust apparatus with edge exhaust system.
Optionally, the opening on the substrate tray is the biggish opening or several of an internal diameter in centrally disposed region A lesser opening of internal diameter.
Optionally, the central discharge air system includes central discharge air channel and the exhaust that connect with the central discharge air channel Device, the central discharge air channel include at least one current-limiting apparatus, and several limitation gas flowings are arranged on the current-limiting apparatus Restricted flow passage.
Optionally, the restricted flow passage is hole shape, flute profile, discontinuous circular ring shape or other irregular shapes.
Optionally, the interior of rotating shaft is hollow structure, and is set as central discharge air channel, the central discharge air channel With the opening in communication, for reaction chamber to be discharged in the reaction gas of conversion zone and side reaction gas.
Optionally, a current-limiting apparatus is set in the central discharge air channel, several limitation gas are set on the current-limiting apparatus The restricted flow passage of body flowing, the current-limiting apparatus are fixed on the side wall of the hollow rotary shaft or are fixed on reaction chamber bottom Portion.
Optionally, one annular sidewall is set around the rotary shaft periphery, between the annular sidewall and the rotary shaft A central discharge air channel is formed, the central discharge air channel constitutes a part of the central discharge air system, the central discharge air Channel and the opening in communication, for reaction chamber to be discharged in the reaction gas of conversion zone and side reaction gas.
Optionally, a current-limiting apparatus is set in the central discharge air channel, several limitation gas are set on the current-limiting apparatus The restricted flow passage of body flowing, is arranged a slit between the current-limiting apparatus and the rotary shaft.
Optionally, a current-limiting apparatus is set between the substrate tray and the rotary shaft, is arranged on the current-limiting apparatus The restricted flow passage of several limitation gas flowings, the restricted flow passage lead to the opening on the substrate tray with the central discharge air Gas connection is kept between road.
Optionally, the rotary shaft is connected with the current-limiting apparatus, and the current-limiting apparatus is connected with the substrate tray It connects, the rotary shaft drives the current-limiting apparatus to rotate together with substrate tray.
Optionally, the central discharge air system further includes one second current-limiting apparatus, and second current-limiting apparatus is arranged in institute Central discharge air system is stated close to the position of reaction chamber bottom.
Optionally, several substrates on the substrate tray are arranged around the central area, and make described each The distance at the center of circle of piece substrate to the center of the central discharge air system is identical.
Optionally, the substrate tray includes the central area of the opening being arranged and by the edge of proximal edge exhaust system Region, several substrates are arranged around the central area, and make between the central area and fringe region along institute That states substrate tray only accommodates a piece of substrate in the radial direction.
Optionally, heating device is set below the substrate tray, one thermal wall is set around the heating device, it is described Edge exhaust system includes a current-limiting apparatus, is arranged between the side wall of the reaction chamber and the thermal wall, the current limliting dress Set the restricted flow passage that several limitation gas flowings are set.
Optionally, the air transporting arrangement is gas shower hair style distributed architecture, and at least two groups reaction gas is passed through into institute It states gas spray to inject in the conversion zone, and is maintained isolation from each other before reaching the conversion zone.
Optionally, the gas spray includes several gas distribution channels, the gas close to the conversion zone side Body distribution channel provides the reaction gas generally perpendicular to the substrate tray.
Optionally, the gas distribution channel is the groove-like structure of lengthwise open or the groove-like structure of annular shape, differential responses The gas distribution channel interval of gas is arranged.
Optionally, the gas distribution channel is tubular structure.
Optionally, the gas spray includes central area and fringe region, inert gas through the central area into Enter conversion zone.
Optionally, the central area of the gas spray corresponds to the opening setting of substrate tray, and the inert gas is used In the substitution reaction gas.
Optionally, the central area of the substrate tray is additionally provided with a recessed portion, the recessed portion and it is described at least one Open gas connection, the recessed portion is interior to be arranged a dismountable current limiting plate.
Optionally, the substrate tray central area setting open amount is one, and the internal diameter of the recessed portion is greater than described The internal diameter of opening, the recessed portion and the opening form a step, to support the current limiting plate.
Optionally, multiple openings are arranged in the substrate tray central area, between the recessed portion and the multiple opening One gas diffusion space is set.
Optionally, the rotary shaft extends outwardly several support arms close to one end of substrate tray, the support arm tool There is certain length, one end of which is fixed in rotary shaft, a protruding portion is arranged in the other end, is used to support fixed substrate holder Disk, is arranged an annular sidewall around the rotary shaft periphery, and a center row is formed between the annular sidewall and the rotary shaft Gas channel, the central discharge air channel constitute a part of the central discharge air system, and the central discharge air channel is opened with described Mouth is connected, for reaction chamber to be discharged in the reaction gas of conversion zone and side reaction gas.
Optionally, the support arm quantity is 3, the substrate tray lower surface be arranged the recessed portion of corresponding number with The protruding portion matches.
Further, the invention discloses a kind of chemical vapor deposition method, the method is anti-in a chemical vapor deposition Indoor progress is answered, the substrate tray for supporting several substrates, support are set in the reaction chamber and the substrate tray is driven to rotate Rotary shaft and inlet duct, the substrate tray central area setting at least one run through the substrate tray upper following table The opening in face, central area setting one and the central discharge air system for being open and being in fluid communication with each other inside the reaction chamber, The substrate tray periphery is surrounded with an edge exhaust system, and the central discharge air system and the edge exhaust system connect It is connected to a few exhaust apparatus, the method includes the following steps:
By the inlet duct into the conversion zone between the substrate tray and inlet duct vertically Input reaction gas；
It rotates the rotary shaft and the substrate tray above it is driven to rotate, carry out chemical vapor deposition on the substrate Reaction；
Reaction gas and side reaction gas above the conversion zone and substrate is flowed through to arrange via the center simultaneously Gas system and the edge exhaust system are discharged outside the reaction chamber；
Control the capacity ratio of the central discharge air system and the edge exhaust system.
Preferably, an at least current-limiting apparatus is respectively set inside the central discharge air system and edge exhaust system.
Preferably, the central discharge air system and the edge exhaust system are separately connected an exhaust apparatus, the method The capacity of the central discharge air system and edge exhaust system is separately controlled including the use of described two exhaust apparatus And exhaust velocity.
The present invention has the advantages that edge exhaust system is arranged in the present invention simultaneously in the reaction chamber of chemical vapor deposition unit System and central discharge air system central discharge air system are arranged in below the central area opening of substrate tray, by edge exhaust system The peripheral region of substrate tray is arranged in system, and change that traditional reaction gas can only be vented by edge exhaust system shows Shape, it is preferable that being placed on the substrate quantity between the central area of substrate tray and fringe region by setting is 1, be ensure that The reaction gas and side reaction gas of every substrate surface simultaneously flow through central discharge air system and edge exhaust system, reach similar The air flow method of a piece of substrate is only handled in each reaction chamber, improves the uniformity of film deposition.By the way that diversified forms are arranged Current-limiting apparatus, can effective regulating gas discharge uniformity, while reducing the manufacture difficulty of equipment.The present invention passes through The inlet duct supplied straight down is set, the distance between inlet duct and substrate tray can be increased, reduces reaction gas In inlet duct close to the deposition on conversion zone surface.
Detailed description of the invention
Fig. 1 shows the schematic diagram of the section structure of an embodiment of the present invention reaction chamber；
Figure 1A shows a kind of schematic top plan view of embodiment substrate tray；
The schematic diagram of the section structure of an embodiment of the present invention reaction chamber is shown respectively in Figure 1B-Fig. 1 D；
Fig. 2 shows an embodiment of the present invention reaction chamber the schematic diagram of the section structure；
Fig. 2A shows a kind of schematic top plan view of embodiment substrate tray；
Fig. 2 B shows a kind of schematic top plan view of embodiment substrate tray；
Fig. 2 C shows the schematic diagram of the section structure of an embodiment of the present invention reaction chamber；
The schematic diagram of the section structure of an embodiment of the present invention reaction chamber is shown respectively in Fig. 3-3A；
Rotary shaft and its connection type structural schematic diagram with substrate tray is shown respectively in Fig. 3 B-3F；
Fig. 3 G shows the schematic diagram of the section structure of an embodiment of the present invention reaction chamber；
Fig. 4 shows the schematic diagram of the section structure of an embodiment of the present invention reaction chamber；
Fig. 4 A shows the connected mode schematic diagram of a rotary shaft and substrate tray；
The schematic diagram of the section structure of an embodiment of the present invention reaction chamber is shown respectively in Fig. 5-5A；
Fig. 6 A-6C shows a kind of schematic diagram of the reaction gas conveying device 50 of embodiment；
Fig. 6 D shows the schematic diagram of the air transporting arrangement 50 of another embodiment；
Fig. 7 A-7B shows the schematic diagram of the reaction gas conveying device 50 of another embodiment；
Fig. 8 shows the schematic diagram of the section structure of an embodiment of the present invention reaction chamber；
Fig. 9-9A shows the schematic diagram of the section structure of another embodiment reaction chamber；
Figure 10 shows the schematic diagram of the section structure of prior art reaction chamber.
Specific embodiment
The present invention will now be described in detail with reference to the accompanying drawings.
The present invention provides a kind of on substrate or substrate deposition film or the chemical vapor deposition of epitaxial crystal growth are anti- Answer device and its deposition method.The reaction unit and deposition method can be used for depositing all kinds of films on substrate or on substrate, In particular, reaction unit of the invention can more preferably be deposited suitable for MOCVD method or HVPE method or epitaxial growth III-V Race's film.
Chemical vapor deposition unit provided by the present invention may be implemented both handle multi-disc simultaneously in a reaction chamber Substrate, and guarantee that each substrate such as the yield and the uniformity that handle in monocrepid reaction chamber, deposits to not only improve Or yield, the homogeneity of epitaxial growth film, and yield can be greatly improved, and each handled sizes of substrate can be Larger size, such as: 6 inches, 8 inches or larger size etc..In chemical vapor deposition unit provided by the present invention, reaction Indoor setting simultaneously is located at the central discharge air system of substrate tray central area and arranges positioned at the edge of substrate tray fringe region Several substrates are arranged around the central area of substrate tray in gas system, and preferably, substrate tray fringe region and Only place a piece of substrate in the radial direction along substrate tray between central area so that the reaction gas of every substrate surface and Side reaction gas is discharged from central exhaust system and edge exhaust system simultaneously.In this way, being flowed through for each substrate Air-flow above it both may be used in a reaction chamber as there was only the monocrepid processing chamber of a piece of substrate on substrate tray to realize To handle more substrate simultaneously, but guarantee each substrate as handled in monocrepid reaction chamber the uniformity, high yield, One property, and greatly improve yield.Below in conjunction with attached drawing and each embodiment, the present invention will be described in detail.
Fig. 1 is a kind of progress chemical vapor deposition on substrate provided by a specific embodiment according to the present invention 100 structural schematic diagram of reaction chamber.As shown in Figure 1, reaction chamber 100 is a kind of vertical response room, the top setting one of reaction chamber is anti- Answer air transporting arrangement 50.Reaction gas 50a, 50b or more reaction gas are connected with reaction gas conveying device 50, use In the delivered inside reaction gas to reaction chamber 100.Selectively, reaction gas conveying device 50 also with a cooling device or temperature Degree control device 20 is connected, and the cooling device or temperature control equipment 20 can be when reaction chamber 100 work to reaction gas Certain parts (not shown) of conveying device 50 are cooled down or are realized temperature control.
Reaction chamber 100 further includes reaction chamber side wall 101, is provided with substrate in the interior zone of reaction chamber side wall 101 and holds It carries and sets, substrate bearing device includes substrate tray 110 and the rotary shaft 120 for supporting substrate tray, the upper table of substrate tray 110 Face is placed with or accommodates more substrate W.Selectively, the appropriate position below substrate tray 110 is provided with heating dress 30 are set, for equably heating to substrate tray 110 and substrate W placed thereon.To avoid heating device 30 from causing 101 temperature of reaction chamber side wall is excessively high, in heating device periphery around one circle thermal wall 102 of setting.In order to realize more preferably film Deposition effect, in process treatment process, substrate tray 110 needs to keep rotation with certain revolving speed, which passes through rotation Axis 120 and rotating mechanism 127 are realized.The rotation of certain substrate tray 110 can also be realized otherwise.In reaction chamber 100 Appropriate position further includes an exhaust apparatus 40, for example, exhaust pump, to by the reaction gas of reaction chamber 100 and side reaction gas Body is discharged inside reaction chamber 100, and keeping the inside of reaction chamber 100 is vacuum or the reaction environment with certain air pressure.
It should be noted that forming conversion zone between reaction gas conveying device 50 shown in FIG. 1 and substrate tray 110 105, reaction gas conveying device 50 provides the reaction gas for flowing to substrate W surface vertically downwards, and actual design can have more Kind scheme, is discussed in detail below.
In reactor shown in Fig. 1, reaction gas conveying device 50 provides the reaction gas for flowing to substrate W vertically, by In technical process, the high speed rotation under the drive of rotary shaft 120 and rotating mechanism 127 of substrate tray 110, substrate surface it is anti- 101 direction of reaction chamber side wall can be thrown toward by answering gas and side reaction gas under the influence of centrifugal force, via being circumferentially positioned at base The edge exhaust system 60 of 110 periphery of tablet tray is discharged, and the gas that necessarily will cause different location above substrate reaches edge row The path of gas system 60 is different, causes substrate surface chemical deposition problem of non-uniform.For this purpose, Fig. 1 disclosed embodiment of the present invention Middle reaction chamber also sets up central discharge air system 70 in addition to edge exhaust system 60 is arranged.It is designed specifically to, in substrate tray 110 Central area setting penetrates through the opening 115 of 110 upper and lower surface of substrate tray, and central discharge air channel is arranged below corresponding opening 115, Since rotary shaft 120 is located at below the central area of substrate tray, the inside of setting rotary shaft 120 is hollow structure, in Centre exhaust passage 122 is arranged in the hollow structure of rotary shaft 120.Central discharge air system 70 include central discharge air channel 122 and Connect the exhaust apparatus 40 of central discharge air channel 122,115 fluid communication of opening of central discharge air channel 122 and substrate tray.? Under the action of exhaust apparatus 40, the exhaust passage internal pressure of central discharge air system is small compared with the pressure of conversion zone 105, therefore base Gas around the opening 115 of tablet tray 110 flows to central discharge air system 70 under the action of negative pressure.I.e. during reaction process, A part of reaction gas and side reaction gas of substrate surface can be discharged instead through edge exhaust system 60 under the influence of centrifugal force Room is answered, another part can enter opening 115 under the action of exhaust apparatus 40, and reaction chamber is discharged through central discharge air system 70.
Figure 1A shows the top view of substrate tray 110 described in Fig. 1, in embodiment shown in figure 1A, substrate tray Including central area 1102 and fringe region 1101, the setting of central area 1,102 one of substrate tray is penetrated through on substrate tray 110 The circular open 115 of lower surface, several substrate W are arranged around circular open 115, and the center of circle of several substrates is located at one On the concentric circles of substrate tray, away from the center of circle of substrate tray, O distance is R, the central area 1102 of substrate tray 110 to the concentric circles A piece of substrate W, every substrate W are only set in the radial direction along substrate tray 110 between substrate tray fringe region 1101 The center of circle to 1102 edge of central area distance L2 with to 1101 edge distance L1 of fringe region it is equal, to guarantee substrate W On gas to edge exhaust system and central discharge air system path it is equal.Obviously, during reaction process, although substrate The high speed rotation of pallet will cause gas and flow to the fringe region of substrate tray, but due to the effect of central discharge air system, circle Air pressure is lower than the air pressure of conversion zone in shape opening 115 and central discharge air channel 122 below, still can attract by subcircular Reaction chamber is discharged through central discharge air system 70 in the reaction gas and side reaction gas of substrate surface near opening 115.
In real reaction technique, to avoid reaction gas and side reaction gas from causing conversion zone by exhaust passage fastly very much Gas in 105 is unevenly distributed, and needs that control gas stream is arranged inside central discharge air system 70 and edge exhaust system 60 The device of speed, it is therefore intended that the rate of discharge by controlling gas controls the gas flow uniformity of conversion zone 105, and Fig. 1 shows Example property shows a kind of embodiment, a current-limiting apparatus 61 be circumferentially positioned between thermal wall 102 and reaction chamber side wall 101 and Close to reaction chamber bottom position, several restricted flow passages 62 are set on current-limiting apparatus 61, are discharged for limiting edge exhaust system 60 Reaction gas and side reaction gas.The current-limiting apparatus of edge exhaust system 60 can there are many designs, as long as being able to achieve limitation The device of gas flowing can be employed, here, the present invention is no longer introduced it.Also, it is succinct for style of writing, in the case where connecing The attached current-limiting apparatus that edge exhaust system 60 is not shown in the figure come, it should be understood that any feasible scheme can be applied to Hereafter in each embodiment shown in the drawings.Following embodiment mainly introduces the current-limiting apparatus design of central discharge air system 70.Figure 1B shows the schematic diagram of the section structure of another embodiment reaction chamber of the invention, in this embodiment, substrate tray 110 and rotation One current-limiting apparatus 130 is set between axis 120, several restricted flow passages 135 are set on current-limiting apparatus 130, by designing restricted flow passage 135 shape, size and distribution density cooperates the deflation rate of exhaust apparatus 40, realizes the exhaust to central exhaust system 70 Control, to guarantee the gas flow uniform of conversion zone 105.In the present embodiment, restricted flow passage 135 can be poroid, slot The multiple rules such as shape or discontinuous annular shape or irregular shape, can be set to be uniformly distributed, also can according to need The deflation rate of adjusting is set as uneven distribution.Its material can be the high temperature resistants such as stainless steel and have good mechanical strength Material.Specific connection structure can be with are as follows: current-limiting apparatus 130 is arranged below substrate tray 110, and corresponding opening 115 is arranged, rotation Axis 120 is arranged below current-limiting apparatus 130, and wherein setting is able to maintain synchronous rotary between rotary shaft 120 and current-limiting apparatus 130 Structure (not shown), setting is able to maintain the structure (not shown) of synchronous rotary between current-limiting apparatus 130 and substrate tray 110, When rotary shaft 120 rotates under the driving of rotating mechanism 127, current-limiting apparatus 130 can be driven synchronous together with substrate tray 110 Rotation.
During chemical vapor deposition process, reaction gas can not only react deposition in substrate surface, react Deposition reaction can also occur for other regions other than indoor substrate, and the deposit of generation is recognized as needed for simultaneously non-process To be contaminant deposition, which usually exists with graininess or sheet form, in exhaust process, graininess or piece Shape pollutant easily blocks exhaust passage, and particularly, current-limiting apparatus 130 is arranged close to substrate tray 110 in Figure 1B, if deposition is dirty Dye object heap is attached in opening 115, or even is higher by the surface of substrate tray, will certainly be to the air-flow in deflation rate and conversion zone Distribution impacts, and then influences the uniformity of substrate surface film.To solve the above-mentioned problems, Fig. 1 C provides a kind of preferred A current-limiting apparatus 140 is arranged inside central discharge air channel 122, current limliting is arranged on current-limiting apparatus in this embodiment for embodiment Channel 145, distribution of the restricted flow passage 145 on current-limiting apparatus 140 can be a variety of rule such as poroid, channel-shaped or discontinuous annular shape Then or irregular shape, it can be set to be uniformly distributed, the deflation rate that also can be adjusted according to the needs is set as uneven Distribution.In the present embodiment, the current-limiting apparatus 140 in centrally disposed exhaust passage 122 can be fixed on the inside of rotary shaft 120 As rotary shaft rotates together on wall 121, can also be fixed on by other means inside central discharge air channel 122, not with rotation Shaft rotates together, and such as current-limiting apparatus 140 is supported on inside central discharge air channel 122 by fixed device 141, fixed device 141 ends are mounted on reaction chamber bottom wall.Any position inside central discharge air channel 122 can be set in current-limiting apparatus 140. As one embodiment, in order to accommodate more contaminant deposition, and also to be easily installed, current-limiting apparatus 140 is close The setting of reaction chamber bottom position.
Fig. 1 D shows another embodiment of the present invention, and in this embodiment, the current-limiting apparatus 130 and 140 of two kinds of forms is simultaneously Setting, can preferably control exhaust in some applications.In the present embodiment, the restricted flow passage 135 of current-limiting apparatus 130 can be with It is appropriately arranged with larger interior diameter, to cooperate current-limiting apparatus 140 that current limliting exhaust is better achieved, and avoids the contaminant deposition heap generated Product is above restricted flow passage 135.In the present embodiment, current-limiting apparatus 140 is arranged on the inner sidewall 121 of rotary shaft.
Edge exhaust system and central discharge air is arranged in above-described embodiment simultaneously in the reaction chamber of chemical vapor deposition unit Central discharge air system is arranged in below the central area opening of substrate tray, edge exhaust system is arranged in substrate by system The peripheral region of pallet changes the status that traditional reaction gas can only be vented by edge exhaust system, ensure that every The reaction gas and side reaction gas of substrate surface simultaneously flow through central discharge air system and edge exhaust system, reach and are similar to often A reaction chamber only handles the air flow method of a piece of substrate, improves the uniformity of film deposition.At central discharge air system and edge Current-limiting apparatus is set on the exhaust passage of exhaust system, can effectively control the exhaust flow rate of reaction gas and side reaction gas, Be conducive to control conversion zone in gas distributing homogeneity, by be arranged current-limiting apparatus be located at exhaust passage different location and Restricted flow passage shape on current-limiting apparatus is different with distribution, the rate that can be discharged with flexible modulation gas.
Fig. 2 discloses a kind of reaction chamber the schematic diagram of the section structure of embodiment, and central discharge air system includes being located at rotary shaft 220 The exhaust apparatus 40 of interior central discharge air channel 222 and connection central discharge air channel 222.Rotary shaft 220 is in rotating mechanism 227 Driving is lower to drive substrate tray 210 to rotate.In the present embodiment, 210 central area of substrate tray is provided with several perforation substrates The opening 215 of 210 upper and lower surface of pallet, the current-limiting apparatus that the opening 215 of the present embodiment can simultaneously as limitation gas flowing.Figure 2A discloses the schematic top plan view of substrate tray in Fig. 2 reaction chamber, and in this embodiment, restricted flow passage is arranged in substrate tray On, several lesser metering hole 215a in aperture are set in the central area of substrate tray 210, i.e. substrate tray 210 plays itself The effect of current-limiting apparatus.In order to guarantee exhaust uniformly, the pore size of metering hole 215a can be set to it is identical, in certain applications In, it is required degree if necessary to deliberately adjustment exhaust velocity, also can according to need the pore size of setting metering hole 215a It is different.Metering hole 215a can be evenly distributed on the central area of substrate tray, also can according to need in central area unevenness Even distribution can be made according to different reactor and different process and be adaptively adjusted.In addition to the metering hole design in Fig. 2A, Fig. 2 B The substrate tray schematic diagram of another embodiment is shown, in the embodiment, restricted flow passage is designed as being distributed in substrate tray 210 The discontinuous annular channel 215b in heart district domain, can also be designed as grooved passageway or other shapes and flute profile as needed The size in channel, details are not described herein.
To guarantee that the gas of conversion zone is evenly distributed, the channel bore of restricted flow passage need to be controlled in lesser range, Since substrate tray generallys use graphite material, machining intensity is weaker, if set on the substrate tray of graphite material Set multiple small-bore metering holes or current limliting slot, the problems such as substrate tray may be chipping, cause design cannot achieve or by Design cost is caused to increase in yield rate is too low.Therefore, Fig. 2 C provides a kind of improved embodiment, in this embodiment, substrate Opening 215c on pallet 210c is set as larger caliber, and inside the central discharge air channel 222c of rotary shaft 220c, band is arranged There is the current-limiting apparatus 240 of smaller restricted flow passage 245.Be open 215c and the cooperation of restricted flow passage 245, realizes anti-to reaction gas and pair The current limliting of gas is answered to be vented.With described in above-described embodiment, current-limiting apparatus 240 can both rotate together with rotary shaft, can also To be fixed on inside central discharge air channel, do not rotated together with rotary shaft.The other structures of the present embodiment reaction chamber design same Fig. 1 Embodiment is roughly the same, therefore corresponding part numbers are not changed, and specific descriptions can refer to above-described embodiment.
In chemical vapor deposition unit, substrate tray will usually maintain 1000 revs/min or higher revolving speed, therefore, such as Fruit central discharge air channel is arranged in interior of rotating shaft, needs to increase the diameter of rotary shaft, this will limit the revolving speed of rotary shaft, together When, the vibration that thicker rotary shaft rotation will lead to reaction chamber is excessive, causes unstable, the unsafe problems of equipment.
Fig. 3 shows a kind of embodiment to solve the above problems, and in the embodiment described in figure 3, rotary shaft 320 is solid knot Structure no longer serves as the role of exhaust passage, revolves around it axis periphery and an annular sidewall 350, annular sidewall 350 and rotary shaft is arranged Central discharge air channel 322 is formed between 320, central area setting perforation 310 upper and lower surface of substrate tray of substrate tray 310 Opening 315, central discharge air channel 322 and exhaust apparatus 40 form central discharge air system, central discharge air channel 322 and opening 315 Fluid communication.A part of reaction gas and side reaction gas of substrate surface enter central discharge air channel 322 through opening 315, and Reaction chamber is discharged through exhaust apparatus 40.Reaction chamber is discharged through edge exhaust passage 60 and exhaust apparatus 40 in another part.Annular side One slit 351 is set between wall 350 and substrate tray 310, therefore substrate tray 310 is avoided to produce when rotating with annular sidewall 350 Raw friction.Since central discharge air channel 322 connects exhaust apparatus, air pressure inside is smaller, can attract gas in metering hole 315 to Flowing in central discharge air channel 322, there is no need to worry that having reaction gas and side reaction gas flows into where heating device 30 Region.It should be appreciated that a sealing element (not shown) further is arranged to being also an option that property at slit 351.Solid rotation Axis 320 drives substrate tray 310 to keep high speed rotation under the driving of rotating mechanism 327, realizes reaction process requirement.
It is previously mentioned, since substrate tray generallys use graphite material, machining intensity is weaker, if in graphite material Multiple small-bore metering holes or current limliting slot are set on the substrate tray of matter, the problems such as substrate tray may be chipping, caused Design cannot achieve or cause design cost to increase since yield rate is too low.To guarantee that the gas of conversion zone is evenly distributed, scheme 3A shows a kind of improved embodiment, and in the present embodiment, the metering hole of larger caliber can be arranged on substrate tray 310a Current-limiting apparatus 340 is arranged close to reaction chamber downstream position in central discharge air channel 322 to prevent substrate tray from rupturing in 315a, In the present embodiment, current-limiting apparatus 340 is the ring structure for revolving around it the setting of axis 320, and setting bore is lesser on current-limiting apparatus Restricted flow passage 345, current-limiting apparatus can be fixed on annular sidewall 350, can also be fixed on base bottom by support device. In the present embodiment, a part of reaction gas and side reaction gas of substrate surface enter central discharge air channel 322 through opening 315, Through the further current limliting of restricted flow passage 345 in central discharge air channel, reaction chamber is discharged through exhaust apparatus 40.
In the embodiment shown in Fig. 3 and Fig. 3 A, rotary shaft 320 is solid design, and rotary shaft 320 both needs to support substrate Pallet is maintained at stable horizontal direction, and needs that substrate tray is driven to keep high speed rotation, therefore rotary shaft and substrate tray Connection be vital design.Fig. 3 B and Fig. 3 C show a kind of connection schematic diagram of mode, the rotary shaft 320a in Fig. 3 B It is a kind of exemplary structure of rotary shaft shown in Fig. 3 and Fig. 3 A, wherein rotary shaft main shaft 3201a is close to substrate tray one end One extension 3202a is set, and extension 3202a has a upper surface 3204a for contacting with substrate tray, guarantees at substrate tray In stable horizontal position, the upper surface extension 3202a is equipped with a protruding portion 3203a.Protruding portion 3203a, extension 3202a And can be wholely set between rotary shaft main shaft 3201a, several components can also be divided into, be removably assembled into one. Fig. 3 C shows the mounting structure diagrammatic cross-section of substrate tray 310a Yu rotary shaft 320a.By Fig. 3 C it is found that being equipped with opening 315a Substrate tray 310a close to the lower surface central area 3101a of the rotary shaft setting recessed portion 3102a that is recessed inwardly of setting, with Accommodate the protruding portion 3203a of rotary shaft.In the present embodiment, protruding portion 3203a sectional view shape in the horizontal direction is ellipse, Corresponding, the recessed portion 3102a of substrate tray is set as the shape being substantially the same with protruding portion, this kind of purpose of design be in order to Protruding portion 3203a and recessed portion 3102a is abutted each other when rotation, so that substrate tray high speed rotation under the drive of rotary shaft. The shape of protruding portion 3203a and recessed portion 3102a can there are many selections, as long as can guarantee rotary shaft rotation, protruding portion with Phenomenon is not had skidded between recessed portion, can drive substrate tray synchronous rotary.Rotate the upper surface of shaft extension 3202a 3204a is in contact with the lower surface 3101a of substrate tray, increases rotary shaft to the bearing area of substrate tray, can be more preferable Ground guarantees the stability of substrate tray, certainly, in some embodiments, even without the design of extension 3202a, rotary shaft top The upper surface of end surfaces and protruding portion is also enough that substrate tray is supported to realize steady quickly rotation.
Fig. 3 D and Fig. 3 E show the connection schematic diagram of another way, and the rotary shaft 320b in Fig. 3 D is Fig. 3 and Fig. 3 A institute A kind of exemplary structure for the rotary shaft shown, wherein two protruding portions are arranged close to substrate tray one end in rotary shaft main shaft 3201b 3203b.It can be wholely set between protruding portion 3203b and rotary shaft main shaft 3201b, several components can also be divided into, it is removable That unloads is assembled into one.Fig. 3 E is shown in specific work process, the mounting structure diagrammatic cross-section of substrate tray and rotary shaft.By Fig. 3 E it is found that be equipped with opening 315b substrate tray 310b close to rotary shaft the lower surface central area 3101b be arranged two to The recessed portion 3102b of sunken inside, to accommodate two protruding portion 3203b of rotary shaft.In the present embodiment, protruding portion 3203b is in water Square to sectional view shape be circle, it is corresponding, what the recessed portion 3102b of substrate tray was set as being substantially the same with protruding portion Shape, the purpose of two protruding portions are arranged are to generate torsion in order to which protruding portion 3203b and recessed portion 3102b is abutted each other when rotated Power, so that substrate tray high speed rotation under the drive of rotary shaft.The shape and quantity of protruding portion 3203b and recessed portion 3102b Can there are many selection, as long as can guarantee rotary shaft rotation, substrate tray synchronous rotary can be driven.The upper table of rotary shaft Face 3204b is in contact with the lower surface 3101b of substrate tray, to support substrate tray to realize steady quickly rotation.
It is readily apparent that, in the description of above-mentioned Fig. 3 B- Fig. 3 E embodiment, the position of protruding portion and recessed portion can be mutual It changing, i.e., protruding portion is arranged in the lower surface of substrate tray, and recessed portion is arranged in the upper surface of rotary shaft, when rotary shaft rotates, recessed portion Against each other with protruding portion, it generates torsion and drives substrate tray rotation.
Fig. 3 F discloses the rotation axis structure diagram of another embodiment, and rotary shaft 320c includes main shaft 3201c, axis 3201c extends outwardly several support arms 3202c close to one end of substrate tray, and the present embodiment is 3, and support arm has certain Length, one end of which is fixed in rotary shaft, a protruding portion 3203c is arranged in the other end, is used to support fixed substrate tray. Rotary shaft disclosed in Fig. 3 F can be used in reaction chamber shown in Fig. 3 G.Reaction chamber structure shown in Fig. 3 G is tied with disclosed in Fig. 3 A Structure is roughly the same, and difference is, the opening 315c of the central area substrate tray 310c is that an internal diameter is biggish in the present embodiment Opening, therefore recessed portion and rotation axis connection can not be set in central area.Rotary shaft 320c has certain length by setting Support arm, using support arm end be arranged protruding portion, meanwhile, substrate tray 310c around opening 315 periphery setting pair The recessed portion for answering number realizes support and driving of the rotary shaft to substrate tray to accommodate the protruding portion 3203c of rotary shaft. In the embodiment, current-limiting apparatus 340 is set, and reaction gas and side reaction gas are through substrate tray inside central discharge air channel 322 On opening enter central discharge air channel 322, then through 345 current limliting of restricted flow passage on current-limiting apparatus, finally in exhaust apparatus 40 Under the action of reaction chamber is discharged.
Fig. 4 provides a kind of improved embodiment, and in the present embodiment, 410 central area of substrate tray setting one is substantially For the opening 415 of circular perforation 410 upper and lower surface of substrate tray, specific structure be can be found in shown in Figure 1A, substrate tray 410 with One current-limiting apparatus 430 is set between rotary shaft 420, and current-limiting apparatus 430 is arranged below circular open 415, is arranged thereon several Restricted flow passage 435, material can be for high temperature resistants such as stainless steels and with the material of good mechanical strength.Specific connection structure can With are as follows: the setting of current-limiting apparatus 430 corresponds to the setting of circular open 415 below substrate tray 410, and rotary shaft 420 is arranged in current limliting 430 lower section of device, is wherein arranged the structure for being able to maintain synchronous rotary, current-limiting apparatus between rotary shaft 420 and current-limiting apparatus 430 Setting is able to maintain the structure of synchronous rotary between 430 and substrate tray 410, when rotary shaft 420 is under the driving of rotating mechanism 427 When rotation, current-limiting apparatus 430 and substrate tray 410 synchronous rotary together can be driven.It revolves around it axis 420 and an annular side is set Wall 450 forms central discharge air channel 422 between annular sidewall 450 and rotary shaft 420, the gas in conversion zone is through substrate holder Metering hole 415 on disk 410 enters central discharge air channel 422, and reaction chamber is discharged through exhaust apparatus 40.Annular sidewall 450 with One slit 451 is set between substrate tray 410, therefore substrate tray 410 is avoided to generate friction with annular sidewall 450 when rotating. In this embodiment, the structure of Fig. 3 B- Fig. 3 F can be used in the connection structure between rotary shaft 420 and current-limiting apparatus 430, can refer to Above description, the connection between current-limiting apparatus 430 and substrate tray 410 can also refer to the structure in above-described embodiment, by Matched recessed portion and protruding portion each other are set on current-limiting apparatus 430 and substrate tray 410, put so that substrate tray is separable It sets on current-limiting apparatus, and is rotated under the drive of current-limiting apparatus.
Fig. 4 A shows the connection type of a kind of preferred rotary shaft and substrate tray, in the present embodiment, in order to guarantee to rotate Stable equilibrium of the axis when driving substrate tray rotation, rotary shaft 420a and current-limiting apparatus 430a is wholely set, i.e. current limliting Device 430a is restricted flow passage 435a to be arranged on current-limiting apparatus 430a, is limiting along the outwardly extending extension in rotary shaft one end At least one protruding portion 434a is set on stream device 430a, protruding portion 434a is inserted into the recessed portion at the back side substrate tray 410a, Realize substrate tray 410a and rotary shaft 420a synchronous rotary.
In Fig. 4 and Fig. 4 A disclosed embodiment, proximal response can be leaned on inside the central discharge air channel 422 where it Another current-limiting apparatus is arranged in room bottom position, and can adjust 430 upper limit circulation road of current-limiting apparatus according to the cooperation of two current-limiting apparatus 435 distribution and size reduces accumulation of the contaminant deposition near opening 415 under the premise of realizing uniformly exhaust.
Fig. 5 discloses a kind of optional embodiment, and in the present embodiment, 510 central area of substrate tray setting one is substantially For the opening 515 of circular perforation 510 upper and lower surface of substrate tray, specific structure be can be found in shown in Figure 1A, and rotary shaft uses class Like the design of Fig. 4 A, rotary shaft 520 and current-limiting apparatus 530 are wholely set, i.e., current-limiting apparatus 530 be along rotary shaft one end to Restricted flow passage 535 is arranged on current-limiting apparatus 530, at least one protruding portion is arranged on current-limiting apparatus 530 for the extension of outer extension 534, protruding portion 534 is inserted into the recessed portion at 510 back side of substrate tray, and rotary shaft 520 drives under the driving of rotating mechanism 527 510 synchronous rotary of substrate tray.It revolves around it axis 520 and an annular sidewall 550 is set, between annular sidewall 550 and rotary shaft 520 Central discharge air channel 522 is formed, the current-limiting apparatus 540 of restricted flow passage 545, reaction are provided with inside central discharge air channel 522 Gas in region enters central discharge air channel 522 through the opening 515 on substrate tray 510, and through the limit on current-limiting apparatus 540 Reaction chamber is discharged in circulation road 545.In the present embodiment, opening 515, restricted flow passage 535, central discharge air channel 522 and restricted flow passage 545 constitute central discharge air channel 70, a slit 551 are arranged between annular sidewall 550 and substrate tray 510, therefore avoid base Friction is generated with annular sidewall 550 when tablet tray 510 rotates.A slit is also provided between current-limiting apparatus 540 and rotary shaft 520 541, avoid rotary shaft from rubbing when rotating with current-limiting apparatus 540.In the present embodiment, central discharge air system and edge exhaust system System is separately connected an exhaust apparatus, wherein central discharge air channel 522 connects exhaust apparatus 42, and edge exhaust system 60 includes row Device of air 41, for example, exhaust pump, two exhaust apparatus can be controlled separately the reaction of central discharge air system and edge exhaust system The throughput and exhaust velocity of gas and side reaction gas can in order to adjust the uniformity and yield of substrate surface film deposition To be adjusted by control central discharge air system and edge exhaust system gas throughput.It can be set through edge exhaust system System and the gas flow ratio of central discharge air system are 1:0 or 0:1 or the number ratios between both.When setting edge When the gas flow ratio of exhaust system and central discharge air system is 1:0, it is meant that reaction gas and side reaction gas only pass through The exhaust of edge exhaust system.Uniform in order to adjust the gas in conversion zone, usually the ratio of both settings is between 0-1.It answers Work as understanding, central discharge air system and edge exhaust system are separately connected an exhaust apparatus and separately control central discharge air The exhaust velocity and capacity of system and edge exhaust system can be applied to any embodiment party exemplified by the present invention In formula.
Fig. 5 A shows another embodiment, and in the embodiment, central discharge air channel 522 connects exhaust apparatus 42, edge row Gas system 60 connects exhaust apparatus 41, and structure is roughly the same with embodiment shown in fig. 5, and difference is: the rotation of the present embodiment Axis uses rotary shaft 320c shown in Fig. 3 F, and several support arm 3202c, each support arm end setting are arranged on rotary shaft 320c One protruding portion, is used to support fixed substrate tray.510 central area of substrate tray setting, one opening 515, opening lower section is no longer Current-limiting apparatus 530 is set, current-limiting apparatus 540 is only set in central discharge air channel 522, using the current limliting on current-limiting apparatus 540 Realize the limitation flowed to gas in channel 545.Edge exhaust system 60 and central discharge air system equally may be implemented in the present embodiment 70 gas throughput ratio is adjusted between 1-0.
In the present invention, reaction gas conveying device 50 can be there are many plan of establishment, and design core is what it was provided Reaction gas is the direction for being downwardly towards substrate surface, it is preferred that using the structure of gas distribution spray equipment.The gas point Multiple tiny gas distribution holes or gas distributing slot are closely provided on cloth spray equipment.
Fig. 6 A-6C shows a kind of schematic diagram of the reaction gas conveying device 50 of embodiment, in the present embodiment, reaction gas Conveying device is a kind of design of gas shower hair style, and Fig. 6 A shows the schematic diagram of the section structure of gas spray and substrate tray, Fig. 6 B shows the schematic perspective view of gas spray, and Fig. 6 C shows the gas spray schematic diagram of subregion.The present embodiment is retouched The gas spray stated includes gas distribution assembly 11 and gas carrier member 12, and gas distribution assembly 11 includes a gas distribution Pipe 51a and 51b, gas carrier member 12 include two groups of gas delivery chute 52a and 52b, every group of gas delivery chute 52a and 52b it Between but channel 20 of internal filling coolant liquid are set.Gas service pipes 51a and gas delivery chute 52a is tightly connected, by reaction gas The first reaction gas in the 50a of body source is transported in conversion zone 105, and gas service pipes 51b and gas delivery chute 52b sealing connect It connects, the second reaction gas in reacting gas source 50b is transported in conversion zone 105.The setting direction of gas spray is big Cause is parallel to be located above substrate tray, therefore, vertical after the first reaction gas and the second reaction gas eluting gas spray head Flow to substrate W surface.It is clearly visible by Fig. 6 B, the distribution of at least one gas is correspondingly arranged above each gas delivery chute Pipe generates accumulation of pollutants on the surface of gas spray after mixing in conversion zone 105 in order to avoid two groups of reaction gas, The structure that opening becomes larger is set close to the side of conversion zone by least one set of slot of two gas delivery chute 52a and 52b, Reduce the size of gas spray direct haptoreaction region internal surface area in the horizontal direction.Further, the gas distribution Multiple gas distribution spraying zones can also be set on head, e.g., fringe region 501 and middle section 502, multiple gas distribution sprays The gas distribution spray in area can be independently controlled, the film growth response on substrate tray so as to adjust lower section, with Improve the homogeneity of film growth.
In the present invention, due to the opening of the central area setting central discharge air system of substrate tray, overthe openings are corresponding The gas of gas shower head region outflow can form undesirable parasitic contamination deposition on the area, these depositions Object can peel off, drop to the substrate of lower section above cause technology defect, while the gas flowed out can be also directly open it is central Reaction chamber is discharged in exhaust system.To avoid pollution object deposition, while the higher two kinds of reaction gas of price are saved, it can be in gas A third region 503 is arranged in the central area of spray head, and as shown in Figure 6 C, in the present embodiment, third region 503 can be passed through lazy Property gas or other be not involved in the gas such as H chemically reacted in reaction chamber2、N2Deng.The gas is discharged from central discharge air system to react Room avoids generating accumulation of pollutants in the central area of gas spray.
In above-described embodiment, two gas delivery chute 52a and 52b design for lengthwise open, and Fig. 6 D shows the gas of another design Body conveying assembly 12 ', wherein two gas delivery chute 53a and 53b are the annular design being spaced apart from each other, the corresponding gas point in top Piping is set as matched distribution, no longer describes herein.Annular gas conveying assembly 12 ' shown in Fig. 6 D can also be into The setting of row subregion, may refer to the above description.
Fig. 7 A shows the gas spray structural schematic diagram of another embodiment, and Fig. 7 B is the bottom view of gas spray. In this embodiment, the first reaction gas in reacting gas source 50a is transported in conversion zone 105 through air shooter 55a, The second reaction gas in reacting gas source 50b is transported in conversion zone 105 through air shooter 55b, two groups of gas conveyings Pipe is tubular structure, shown in the visible Fig. 7 B of bottom view.Coolant liquid is accommodated in cooling duct 20, for controlling gas spray Temperature.It is readily appreciated that, Fig. 7 A and Fig. 7 B are schematic figure, and the gas spray air shooter quantity actually applied is more It is more, it is more dense, it is arranged evenly to be rationally arranged according to actual needs.
Fig. 8 shows the structural schematic diagram of another embodiment, in the present embodiment, setting edge exhaust system 60 and center row The gas flow ratio of gas system 70 is 0:1, and reaction gas and side reaction gas only pass through 70 row of central discharge air system at this time Gas.As the size of the indoor substrate tray of reaction of MOCVD process units is increasing, the substrate being placed above is increasingly More, the centrifugal force that substrate tray generates when rotating is increasing, in the position close to substrate tray edge, reaction gas and substrate Relative velocity between surface become larger will lead to fringe region film deposition lead to the problem of line defect or non-uniform, this certainty The qualification rate of substrate deposition can be reduced.The present embodiment selects reaction gas and side reaction gas to be only vented from central exhaust system, And since air pressure is lower at central discharge air system, attract reaction gas to flow to the central area of substrate tray 810, to reaction gas The centrifugal force of body forms certain containment, avoid all gas used in the centrifugal force under be thrown to substrate tray edge, reduce base The relative velocity of tablet tray fringe region and reaction gas extends reaction gas in the residence time of substrate surface, improves reaction The utilization efficiency of gas.The uniformity of substrate surface deposition is improved simultaneously.
It should be appreciated that the present invention can also be in such a way that horizontal air inlet adds central discharge air, but the present invention is more preferably real Applying mode is that the mode for selecting reaction gas to enter vertically into adds central discharge air.Because when reaction gas is in the horizontal direction from substrate side When edge injects, in order to maintain reaction gas in the deposition rate and the uniformity of substrate surface, the closer location above substrate is needed One top plate is set to form one between substrate tray apart from lesser space.The lesser space can provide biggish pressure To promote reaction gas to have faster deposition rate in substrate surface, but simultaneously, reaction gas can also be formed in top board surface The unwanted accumulation of pollutants of technique needs often to beat to avoid the accumulation of pollutants from falling the qualification rate for influencing substrate and processing It opens reaction chamber to clean top plate, this certainly will will affect the use of chemical vapor deposition unit, reduce yield.It is of the invention into Device of air uses gas shower hair style structure, and setting reaction gas flows to substrate surface vertically, therefore, gas shower can be set It keeps at a distance biggish space between head and substrate tray, i.e. the height of conversion zone 805 is larger, which can be to avoid Reaction gas, close to the one side contaminant deposition of conversion zone, particularly, cooperates gas shower of the invention in gas spray The structure that opening of the gas delivery channels close to the side of conversion zone becomes larger is arranged in head, reduces gas spray in water Square to direct haptoreaction region internal surface area size.And then it can preferably avoid reaction gas at gas spray table Face contaminant deposition.This can greatly reduce the cleaning time to gas spray, thus the utilization rate and base of equipment can be improved The yield of piece.
Diversified forms can be set in current-limiting apparatus in the present embodiment, and specific descriptions can be with reference to above, and details are not described herein.
Fig. 9 discloses a kind of reaction chamber structure schematic diagram of embodiment, in above-described several embodiments, substrate holder Restricted flow passage shape on disk can be set to diversified forms, however, in actual production, since the manufacture craft of substrate tray needs Longer time is spent, and costly, if necessary to certain specific restricted flow passage, from the scheme of determination to processing needs Substrate tray generally require some months even the longer time, the progress of production technology, therefore, the present embodiment can be seriously affected A kind of improved embodiment is provided.In the embodiment show in figure 9, substrate tray can be using as in Figure 1A, Fig. 2A, Fig. 2 B Any mode, be different from above-described embodiment, the center of the opening of perforation substrate tray upper and lower surface be equipped in the present embodiment The recessed portion 961 of the down-set certain cup depth in region, a current limiting plate 960 to match with the recessed portion are set to described In recessed portion 961, it is preferred that have the component for being used to support current limiting plate 960 in recessed portion 961, for example, the internal diameter of recessed portion 961 Greater than the internal diameter of the opening 915 on substrate tray, therefore, a step is formed in opening 915, to support current limiting plate 960.Current limliting Restricted flow passage 965 is set on plate 960, the restricted flow passage of a kind of shape and distribution, current limiting plate can be set on every kind of current limiting plate 960 960 optional stainless steel materials resistant to high temperature.Compared to rise substrate tray processing technology, the manufacture difficulty of stainless steel current limiting plate and at Originally it substantially reduces, for different process to the different demands of restricted flow passage shape and distribution, it is only necessary to process required shape and divide The current limiting plate 960 of cloth, therefore, same substrate tray can be applicable in all current limiting plates with different shape restricted flow passage. Since the processing cost of current limiting plate 960 is lower, being processed into for components is greatly reduced using the design of the present embodiment This, shortens the design cycle.
Rotary shaft 920 described in the present embodiment can also be tied using structure shown in Fig. 3 F using shown in Fig. 4 A Structure, any rotary shaft that substrate tray 910 can be driven to rotate under the driving of rotating mechanism 927 may be used to the present embodiment Reaction chamber.If revolving around it and an annular sidewall 950, annular sidewall 950 being arranged outside axis 920 using the structure of Fig. 3 F or Fig. 4 A Central discharge air channel 922 is formed between rotary shaft 920 optionally can be set another band current limiting inside annular sidewall 950 The current-limiting apparatus 940 in channel 945.The shape of restricted flow passage on current-limiting apparatus 940 and distribution can be above-described any Shape and distribution.It can be with the shape and distribution phase of the restricted flow passage 965 on the current limiting plate 960 of substrate tray central area Together, or not identical.
The embodiment for being designed as central area and one larger open being set for the substrate tray 910 that Fig. 9 is used, due to center Domain incorporeity part, thus it is when the outflow of the restricted flow passage 965 of reaction gas and side reaction gas self-limiting plate 960 and unobstructed, However, when using the substrate tray of embodiment described in Fig. 2A and Fig. 2 B, for the solid section for avoiding substrate tray central area The gas flowing for stopping restricted flow passage 965, can be arranged gas diffusion space as shown in Figure 9 A below the current limiting plate of central area 962, diffusion space is connected with the opening 915a that central area is arranged, the gas flowed out in the restricted flow passage 965 of current limiting plate 960 Enter the exhaust passage below substrate tray from opening 915a through gas diffusion space 962.
In the embodiment of Fig. 9-9A description, central discharge air system and edge exhaust system can connect same exhaust dress It sets, an exhaust apparatus can also be separately connected, when being separately connected an exhaust apparatus, each exhaust apparatus can be controlled independently Make the extraction flow of its exhaust system.
The present invention also provides a kind of chemical vapor deposition method, the method can be in above-described chemical vapor deposition It is carried out in reaction chamber, the substrate tray for supporting several substrates, support are set in reaction chamber and drive the substrate tray rotation Rotary shaft and inlet duct, in the central area of substrate tray, setting at least one runs through the upper and lower surface of the substrate tray It is open, the central area setting one inside the reaction chamber and the central discharge air system for being open and being in fluid communication with each other are described Substrate tray periphery is surrounded with an edge exhaust system, and the central discharge air system and the edge exhaust system are connected to A few exhaust apparatus, the method includes the following steps:
By the inlet duct into the conversion zone between the substrate tray and inlet duct vertically Input reaction gas；Chemical vapour deposition reaction is carried out on the substrate；It flows through above the conversion zone and substrate Reaction gas and side reaction gas are discharged outside the reaction chamber via central discharge air system and edge exhaust system simultaneously；Control institute State the capacity ratio of central discharge air system and the edge exhaust system.
Compared with the prior art, the advantages of the present invention are as follows: the present invention is same in the reaction chamber of chemical vapor deposition unit When setting edge exhaust system and central discharge air system, central discharge air system is arranged under the central area opening of substrate tray Edge exhaust system, is arranged in the peripheral region of substrate tray, changing traditional reaction gas can only be arranged by edge by side The status of gas system exhaust ensure that the reaction gas of every substrate surface and side reaction gas simultaneously flow through central discharge air system With edge exhaust system, reach the air flow method for only handling a piece of substrate similar to each reaction chamber, improves film deposition The uniformity.By the current-limiting apparatus of setting diversified forms, and central discharge air system and edge exhaust system is made to be separately connected one The exhaust apparatus that can individually control can effectively adjust the capacity and exhaust of edge exhaust system and central discharge air system Speed, the final uniformity for realizing substrate process processing and raising yield, while reducing the manufacture difficulty of equipment.The present invention is logical The inlet duct for providing and supplying straight down is provided, the same of the holding relatively large distance between inlet duct and substrate tray can be made When reach similarly react needed for gas pressure, the distance between inlet duct and substrate tray, which become larger, can reduce reaction gas In inlet duct close to the deposition on conversion zone surface.
Each embodiment of the invention is described in detail above.It should be noted that above-described embodiment only shows Plasticity, rather than limitation of the present invention.Any technical solution without departing substantially from spirit of the invention should all fall into guarantor of the invention Within the scope of shield.In addition, any reference signs in the claims should not be construed as limiting the involved claims；" comprising " One word is not excluded for device or step unlisted in other claims or specification；The words such as " first ", " second " are only used to It indicates title, and does not indicate any particular order.

Claims (29)

1. a kind of chemical vapour deposition reaction device characterized by comprising
Reaction chamber, inside setting support substrate tray, support and the rotary shaft for driving the substrate tray rotation of several substrates, The opening of the upper and lower surface of at least one perforation substrate tray of central area setting of the substrate tray；
Inlet duct is located above the substrate tray, for providing the reaction gas for flowing to substrate surface, the inlet duct A conversion zone is formed between the substrate tray；
A central discharge air system is arranged in central area inside the reaction chamber, and the central discharge air system is located at the substrate holder Below the opening of disk, and with the opening fluid communication；
Around the substrate tray and rotary shaft periphery, one edge exhaust system is set；
Wherein, by the reaction gas of the substrate surface and side reaction gas simultaneously via the central discharge air system and described Edge exhaust system is discharged outside reaction chamber；
The central discharge air system includes central discharge air channel and the exhaust apparatus that connect with the central discharge air channel, it is described in Entreating exhaust passage includes at least one current-limiting apparatus, and the restricted flow passage of several limitation gas flowings is arranged on the current-limiting apparatus.
2. reaction unit as described in claim 1, it is characterised in that: the central discharge air system and the edge exhaust system It is separately connected an exhaust apparatus, two exhaust apparatus is for central discharge air system described in independent control and edge exhaust system row Gas.
3. reaction unit as described in claim 1, it is characterised in that: the central discharge air system is connected with edge exhaust system Same exhaust apparatus.
4. reaction unit as described in claim 1, it is characterised in that: the opening on the substrate tray is centrally disposed area The biggish opening of one internal diameter in domain or the lesser opening of several internal diameters.
5. reaction unit as described in claim 1, it is characterised in that: the restricted flow passage is hole shape, flute profile, discontinuous annulus Shape or other irregular shapes.
6. reaction unit as described in claim 1, it is characterised in that: the interior of rotating shaft is hollow structure, and is set as Central discharge air channel, the central discharge air channel and the opening in communication, for the reaction gas of conversion zone and pair is anti- Answer gas that reaction chamber is discharged.
7. reaction unit as claimed in claim 6, it is characterised in that: a current-limiting apparatus is set in the central discharge air channel, The restricted flow passage of several limitation gas flowings is set on the current-limiting apparatus, and the current-limiting apparatus is fixed on the hollow rotation The side wall of axis is fixed on reaction chamber bottom.
8. reaction unit as described in claim 1, it is characterised in that: around the rotary shaft periphery, one annular sidewall is set, A central discharge air channel is formed between the annular sidewall and the rotary shaft, the central discharge air channel constitutes the center row A part of gas system, the central discharge air channel and the opening in communication, for by the reaction gas and pair of conversion zone Reaction chamber is discharged in reaction gas.
9. reaction unit as claimed in claim 8, it is characterised in that: a current-limiting apparatus is set in the central discharge air channel, The restricted flow passage of several limitation gas flowings is set on the current-limiting apparatus, is arranged between the current-limiting apparatus and the rotary shaft One slit.
10. the reaction unit as described in the claim of any one of claim 6 or 8, it is characterised in that: the substrate tray and institute It states and a current-limiting apparatus is set between rotary shaft, the restricted flow passage of several limitation gas flowings is set on the current-limiting apparatus, it is described Restricted flow passage and the opening on the substrate tray and holding gas connection between the central discharge air channel.
11. reaction unit as claimed in claim 10, it is characterised in that: the rotary shaft is connected with the current-limiting apparatus, The current-limiting apparatus is connected with the substrate tray, and the rotary shaft drives the current-limiting apparatus to turn together with substrate tray It is dynamic.
12. reaction unit as claimed in claim 11, it is characterised in that: the central discharge air system further includes one second current limliting The central discharge air system is arranged in close to the position of reaction chamber bottom in device, second current-limiting apparatus.
13. reaction unit as described in claim 1, it is characterised in that: several substrates on the substrate tray are around described Central area setting, and make the distance at center of the center of circle of each substrate to the central discharge air system identical.
14. reaction unit as described in claim 1, it is characterised in that: the substrate tray includes being arranged in the opening Heart district domain and fringe region by proximal edge exhaust system, several substrates are arranged around the central area, and make A piece of substrate is only accommodated in the radial direction along the substrate tray between the central area and fringe region.
15. reaction unit as described in claim 1, it is characterised in that: heating device is arranged below the substrate tray, surround A thermal wall is arranged in the heating device, and the edge exhaust system includes a current-limiting apparatus, and the side of the reaction chamber is arranged in Between wall and the thermal wall, the restricted flow passage of several limitation gas flowings is set on the current-limiting apparatus.
16. reaction unit as described in claim 1, it is characterised in that: the air transporting arrangement is gas shower hair style point Cloth structure, at least two groups reaction gas is passed through to be injected in the conversion zone into the gas spray, and reaches the reaction It is maintained isolation from each other before region.
17. reaction unit as claimed in claim 16, it is characterised in that: the gas spray is close to the conversion zone one Side includes several gas distribution channels, and the gas distribution channel provides the reaction gas generally perpendicular to the substrate tray.
18. reaction unit as claimed in claim 17, it is characterised in that: the gas distribution channel is the channel-shaped knot of lengthwise open The groove-like structure of structure or annular shape, the gas distribution channel interval setting of differential responses gas.
19. reaction unit as claimed in claim 17, it is characterised in that: the gas distribution channel is tubular structure.
20. the reaction unit as described in claim 18 or 19, it is characterised in that: the gas spray include central area and Fringe region, inert gas enter conversion zone through the central area.
21. reaction unit as claimed in claim 20, it is characterised in that: the central area of the gas spray corresponds to substrate The opening of pallet is arranged, and the inert gas is for substituting the reaction gas.
22. reaction unit as described in claim 1, it is characterised in that: it is recessed that the central area of the substrate tray is additionally provided with one Concave portion, the recessed portion and at least one opening gas connection, the recessed portion is interior to be arranged a dismountable current limiting plate.
23. reaction unit as claimed in claim 22, it is characterised in that: open amount is arranged in the substrate tray central area It is one, the internal diameter of the recessed portion is greater than the internal diameter of the opening, and the recessed portion and the opening form a step, to prop up Support the current limiting plate.
24. reaction unit as claimed in claim 22, it is characterised in that: the substrate tray central area setting is multiple to open Mouthful, a gas diffusion space is set between the recessed portion and the multiple opening.
25. reaction unit as described in claim 1, it is characterised in that: the rotary shaft is outside close to one end of substrate tray Extend several support arms, the support arm has certain length, and one end of which is fixed in rotary shaft, the other end is arranged one A protruding portion is used to support fixed substrate tray, around the rotary shaft periphery be arranged an annular sidewall, the annular sidewall with A central discharge air channel is formed between the rotary shaft, the central discharge air channel constitutes one of the central discharge air system Point, the central discharge air channel and the opening in communication, for the reaction gas of conversion zone and side reaction gas to be discharged Reaction chamber.
26. reaction unit as claimed in claim 25, it is characterised in that: the support arm quantity is 3, the substrate holder The recessed portion that corresponding number is arranged in disk lower surface matches with the protruding portion.
27. a kind of chemical vapor deposition method, the method carries out in a chemical vapor deposition reaction chamber, in the reaction chamber The substrate tray for supporting several substrates, support and the rotary shaft and inlet duct that drive the substrate tray rotation, institute are set Opening of the central area setting at least one through the upper and lower surface of the substrate tray for stating substrate tray, inside the reaction chamber Central area setting one and the central discharge air system that is in fluid communication with each other of being open, the substrate tray periphery is around setting There is an edge exhaust system, the central discharge air system connects an at least exhaust apparatus, the side with the edge exhaust system Method includes the following steps:
It is vertically inputted by the inlet duct into the conversion zone between the substrate tray and inlet duct Reaction gas；
It rotates the rotary shaft and the substrate tray above it is driven to rotate, it is anti-to carry out chemical vapor deposition on the substrate It answers；
Reaction gas above the conversion zone and substrate and side reaction gas are flowed through simultaneously via the central discharge air system System and the edge exhaust system are discharged outside the reaction chamber；
Control the capacity ratio of the central discharge air system and the edge exhaust system.
28. method as claimed in claim 27, it is characterised in that: inside the central discharge air system and edge exhaust system An at least current-limiting apparatus is respectively set.
29. method as claimed in claim 28, it is characterised in that: the central discharge air system and the edge exhaust system point An exhaust apparatus is not connected, and the method includes separately controlling the central discharge air system using described two exhaust apparatus The capacity and exhaust velocity of system and edge exhaust system.
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