US20110006312A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
US20110006312A1
US20110006312A1 US12/831,647 US83164710A US2011006312A1 US 20110006312 A1 US20110006312 A1 US 20110006312A1 US 83164710 A US83164710 A US 83164710A US 2011006312 A1 US2011006312 A1 US 2011006312A1
Authority
US
United States
Prior art keywords
light
emitting
substrate
emitting device
major surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/831,647
Other languages
English (en)
Inventor
Chia-Liang Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HSU, CHIA-LIANG
Publication of US20110006312A1 publication Critical patent/US20110006312A1/en
Priority to US14/265,102 priority Critical patent/US8987017B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the application relates to a light-emitting device, and more particularly to a light-emitting device comprising a substrate having a first major surface and a second major surface.
  • a plurality of light-emitting stacks are on the first major surface, and at least one electronic device is on the second major surface, wherein the light-emitting stacks are electrically connected to the electronic device.
  • the light-emitting mechanism of the light-emitting diode is to take advantage of the energy difference of electrons between the n-type semiconductor and the p-type semiconductor and then to release the energy in the form of light, which is different from the light-emitting mechanism of the incandescent lamp, which is by heating. Therefore, the light-emitting diode is called the cold light source. Besides, the light-emitting diode has the advantages such as long endurance, long lifetime, light weight, and low power consumption. Therefore, the present illumination market expects the light-emitting diode as a new generation illumination to substitute for the traditional light source and apply it to various fields such as traffic signal, backlight module, street light, and medical apparatus.
  • FIG. 1 is the illustration of a conventional AC light-emitting diode device.
  • the light-emitting device 100 comprises a substrate 10 , a plurality of light-emitting units 12 disposing on the substrate 10 and are serially connected to form circuit A and circuit B that are anti-parallel connected to each other later, and two electrodes 14 and 16 disposing on the substrate 10 and electrically connecting to the plurality of the light-emitting units 12 .
  • the alternative current flows into the light-emitting device 100 through the electrode 14
  • the current passes through circuit A and triggers the light-emitting unit 12 in the circuit A to emit light.
  • the alternative current flows into the light-emitting device 100 through the electrode 16
  • the current passes through circuit B and triggers the light-emitting unit 12 in the circuit B to emit light.
  • FIG. 2 is the illustration for the conventional photoelectric apparatus.
  • a photoelectric apparatus 200 comprises a sub-mount 20 , which comprises at least one circuit 202 ; a solder 22 located on the sub-mount 20 to attach the light-emitting device 100 on the sub-mount 20 and to electrically connect the substrate 10 of the light-emitting device 100 with the circuit 202 on the sub-mount 20 ; and one electrically connecting structure 24 electrically connecting the electrode 16 of the light-emitting device 100 and the circuit 202 on the sub-mount 20 .
  • the sub-mount 20 comprises a lead frame or a large-size mounting substrate to facilitate the circuit arrangement and to raise the heat dissipating efficiency.
  • the present disclosure provides a light-emitting device comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks spacing at intervals mutually on the first major surface, wherein the light-emitting stacks electrically connecting to each other via the first electrical connecting structure; and at least one electronic device on the second major surface electrically connecting to the light-emitting stacks via a second electrical connecting structure extending from the first major surface to the second major surface of the substrate.
  • the present disclosure also provides a light-emitting device comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one bridge rectifying device and one passive device on the second major surface, wherein the light-emitting stacks and the bridge rectifying device are electrically connected to each other.
  • the present disclosure further provides a light-emitting device comprising a substrate, wherein a plurality of light-emitting stacks and at least one electronic device disposed on a first major surface and a second major surface of the substrate respectively, and the plurality light-emitting stacks on the first major surface and the electronic device on the second major surface electrically connecting to each other via a plug of the substrate or via the metal wire.
  • the present disclosure further provides a light-emitting device comprising a substrate, wherein a plurality of light-emitting stacks and at least one electronic device disposed on the top-side surface and the bottom-side surface respectively, and further comprising a heat dissipation layer located on the bottom-side surface of the substrate to raise the heat dissipating efficiency and to increase the reliability of the light-emitting device.
  • the present disclosure further provides a light-emitting device disposing the devices such as the electric device like the rectifying device, the resistance, the inductance, and the capacitance or the heat dissipation layer that are not for light emitting on the second major surface of the substrate and to dispose the light-emitting stacks on the first major surface.
  • the devices such as the electric device like the rectifying device, the resistance, the inductance, and the capacitance or the heat dissipation layer that are not for light emitting on the second major surface of the substrate and to dispose the light-emitting stacks on the first major surface.
  • Such design uses the total surface where the light-emitting stacks located on to be the light extraction surface and reduce the waste of light-emitting area.
  • FIG. 1 is the illustration of the conventional light-emitting device.
  • FIG. 2 is the illustration of the conventional photoelectric apparatus.
  • FIG. 3A is the side view illustration in accordance with one embodiment in the present disclosure.
  • FIG. 3B is the circuit illustration of the present disclosure.
  • FIGS. 4A and 4B are the illustrations of the first electrical connecting structure in accordance with one embodiment in the present disclosure.
  • FIGS. 5A and 5B are the illustrations of the second electrical connecting structure in accordance with one embodiment in the present disclosure.
  • FIG. 6 is the top view and the bottom view in accordance with one embodiment in the present disclosure.
  • FIG. 7 is the illustration of the fourth electrical connecting structure in accordance with one embodiment in the present disclosure.
  • FIG. 8 is the illustration in accordance with another embodiment in the present disclosure.
  • FIG. 9 is the illustration in accordance with another embodiment in the present disclosure.
  • FIG. 3A is the side view illustration in accordance with one embodiment in the present disclosure
  • FIG. 3B is the circuit illustration in accordance with one embodiment of the present disclosure.
  • the light-emitting device comprises a substrate 30 having a first major surface 302 and a second major surface 304 ; a plurality of light-emitting stacks 32 spacing at intervals mutually on the first major surface 302 , wherein the light-emitting stacks 32 electrically connecting to each other via a plurality of the first electrical connecting structures 320 ; and at least one rectifying device 34 locating on the second major surface 304 of the substrate 30 , wherein the rectifying device 34 having a plurality of semiconductor stacks 340 , which are electrically connecting to each other via a second electrical connecting structure 342 and arranging in a bridge circuit form.
  • the light-emitting stacks 32 electrically connect to the rectifying device 34 by the first electrical connecting structure 36 .
  • the light-emitting device 300 further comprises at least one bump pad 38 , which is electrically connecting to the rectifying device 34 and the AC power supplier (not shown in the figure) respectively, located on the second major surface 304 .
  • the alternative current flows into the light-emitting device 300 via the bump pad 38 , the current is converted into a direct current by passing through the bridge rectifying circuit, which is arranged by the plurality of the semiconductor stacks 340 located on the second major surface 304 , and then the current is transmitted to the light-emitting stacks through the third electrical connecting structure 36 , wherein the third electrical connecting structure 36 comprises the metal plug filled in the via hole passing through the substrate 30 , or the conductive wire extending from the first major surface 302 to the second major surface 304 .
  • the light-emitting stacks 32 comprise one first conducting type semiconductor layer 322 formed on the substrate 30 , a light emitting layer 324 formed on the first conducting type semiconductor layer 322 , and a second conducting type semiconductor layer 326 formed on the light emitting layer 324 , wherein the materials of the light-emitting stacks 32 comprise semiconductor materials containing aluminum (Al), gallium (Ga), indium (In), nitrogen (N), phosphor (P), and/or arsenic (As), such as the Gallium Nitride (GaN) series materials or the Aluminum Gallium Indium Phosphide (AlGaInP) series materials.
  • the light-emitting stacks 32 are formed by the metal-organic chemical vapor deposition, and each light-emitting stack 32 comprises a partially exposed first conducting type semiconductor layer 322 formed by photolithography and the etching technology.
  • the first electrical connecting structure 320 serially connects to the first conducting type semiconductor layer 322 of the light emitting stack 32 and the second conducting type semiconductor layer 326 of the adjacent light emitting stack 32 respectively.
  • the semiconductor stacks 340 for composing the rectifying device 34 comprise a plurality of the structures such as the light-emitting diode, the Zener diode, or the Schottky diode formed by the metal-organic chemical vapor deposition, the photolithography and the etching technology, and the materials comprise the III-V compounds or the Group IV elements such as the Gallium Nitride (GaN) series materials, the Aluminum Gallium Indium Phosphide (AlGaInP) series materials, or Silicon.
  • the materials comprise the III-V compounds or the Group IV elements such as the Gallium Nitride (GaN) series materials, the Aluminum Gallium Indium Phosphide (AlGaInP) series materials, or Silicon.
  • the first electrical connecting structure 320 comprises an insulating layer 3202 filled between the adjacent light-emitting stacks 32 to prevent the short circuit between the adjacent light-emitting stacks 32 and a metal layer 3204 that is located on the insulating layer 3202 and electrically connecting to the adjacent light-emitting stacks 32 .
  • the first electrical connecting structure 320 could also be a metal wire as shown in FIG. 4B , and the two terminals of the metal wire are connected to the adjacent light-emitting stacks 32 respectively.
  • the second electrical connecting structure 342 comprises an insulating layer 3422 filled between the adjacent semiconductor stacks 340 to prevent the short circuit between the connecting semiconductor stacks 340 and a metal layer 3424 that is located on the insulating layer 3422 and electrically connecting to the adjacent semiconductor stacks 340 .
  • the second electrical connecting structure 342 can also be a metal wire as shown in FIG. 5B , and the two terminals of the metal wire are connected to the adjacent semiconductor stacks 340 respectively.
  • FIG. 6 is the illustration of another embodiment.
  • the light-emitting stacks 32 and the semiconductor stacks 340 of the light-emitting device 300 can be formed on the first major surface 302 and the second major surface 304 by the metal-organic chemical vapor deposition, the photolithography and the etching technology.
  • an adhesive layer 44 can also be provided between the light-emitting stacks 32 , the semiconductor stacks 340 and the substrate 30 to attach the light-emitting stacks 32 and the semiconductor stacks 340 to the first major surface 302 and the second major surface 306 of the substrate 30 respectively.
  • the yield of the products is therefore increased and the production cost is reduced.
  • the material of the adhesive layer 44 comprises the metal material or the organic adhesive material.
  • FIG. 7 is the illustration of another embodiment.
  • the light-emitting device 300 further comprises a passive device 40 located on the second surface 304 of the substrate 30 and electrically connecting to the rectifying device 34 .
  • the passive device 40 comprises a resistance, an inductance, or a capacitance serially connecting to the rectifying device 34 , or a capacitance parallelly connecting to the rectifying device 34 to provide the electric protection for the light-emitting device 300 or to adjust the electric characteristic of the light-emitting device 300 .
  • the passive device can be a thin-film resistance, a thin-film capacitance, or a thin-film inductance integrated with the light-emitting device 300 as a single chip, and the material of the above mentioned thin-film resistance comprises tantalum nitride (TaN), silicon-chromium alloy (SiCr), or nickel-chromium alloy (NiCr).
  • TaN tantalum nitride
  • SiCr silicon-chromium alloy
  • NiCr nickel-chromium alloy
  • FIG. 8 is the illustration of another embodiment.
  • the light-emitting device 300 further comprises a wavelength converting structure 42 located on the light-emitting stacks 32 to absorb and convert the light emitted from the light-emitting stacks 32 .
  • the material of the wavelength comprises one or more than one fluorescent materials or phosphor materials
  • the wavelength converting structure 42 can be a layer structure uniformly coated on the light-emitting stacks 32 or a glue comprising the fluorescent material to encapsulate the light-emitting stacks so the products with different optical properties are formed.
  • FIG. 9 is the illustration of another embodiment.
  • the light-emitting device 300 further comprises a heat dissipation layer 46 , wherein the heat dissipation layer 46 can connect with the second major surface 304 of the substrate 30 or the passive device 34 to guide the heat produced from the elements in the light-emitting device 300 .
  • the material of heat dissipation layer 46 has high thermal conductivity which is preferably larger than that of the substrate 30 or larger than 50 W/mK.
  • the material of the heat dissipation layer 46 can be copper, silver, gold, nickel, diamond, diamond-like carbon (DLC), aluminum nitride (AIN), graphite, carbon nanotube (CNT), or the composite thereof.
  • the thickness of the heat dissipation layer is preferably larger than 3 ⁇ m and the area of it is preferably not smaller than 30% of that of the substrate 30 .
  • the light-emitting devices 300 as shown in FIG. 3A to FIG. 9 can be applied to the lighting system, and the lighting system can be further applied to the illumination system, the display backlight module, or the vehicle lighting, and the light-emitting devices 300 can be adapted to the power supply with 100V, 110V, 220V, 240V, 12V, 24V, or 48V.
  • the present disclosure discloses the light-emitting device 300 disposing the device such as the rectifying device 34 , the bump pad 38 , the resistance, the inductance, the capacitance, and the heat dissipation layer 46 that are not for light emitting on the second major surface 304 of the substrate 30 and to dispose the light-emitting stacks 32 on the first major surface 302 of the substrate 30 .
  • Such design uses the total surface where the light-emitting stacks 32 located on the light-emitting device 300 to be the light extraction surface and reduces the waste of light-emitting area.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
US12/831,647 2009-07-07 2010-07-07 Light-emitting device Abandoned US20110006312A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/265,102 US8987017B2 (en) 2009-07-07 2014-04-29 Light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098123043A TWI495084B (zh) 2009-07-07 2009-07-07 發光元件
TW098123043 2009-07-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/265,102 Division US8987017B2 (en) 2009-07-07 2014-04-29 Light-emitting device

Publications (1)

Publication Number Publication Date
US20110006312A1 true US20110006312A1 (en) 2011-01-13

Family

ID=43426802

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/831,647 Abandoned US20110006312A1 (en) 2009-07-07 2010-07-07 Light-emitting device
US14/265,102 Active US8987017B2 (en) 2009-07-07 2014-04-29 Light-emitting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/265,102 Active US8987017B2 (en) 2009-07-07 2014-04-29 Light-emitting device

Country Status (2)

Country Link
US (2) US20110006312A1 (zh)
TW (1) TWI495084B (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100252840A1 (en) * 2009-04-06 2010-10-07 Cree, Inc. High voltage low current surface emitting led
CN102693970A (zh) * 2011-03-22 2012-09-26 晶元光电股份有限公司 发光二极管装置
US20130001596A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Deposition of esd protection on printed circuit boards
WO2013016355A1 (en) * 2011-07-25 2013-01-31 Cree, Inc. Monolithic multi-junction light emitting devices including multiple groups of light emitting diodes
US8530921B2 (en) 2009-04-06 2013-09-10 Cree, Inc. High voltage low current surface emitting LED
US20130320363A1 (en) * 2012-05-29 2013-12-05 Formosa Epitaxy Incorporation Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device
DE102013113682A1 (de) * 2013-12-09 2015-06-25 Otto-Von-Guericke-Universität Magdeburg Verbindungshalbleiterbauelement
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US20160276402A1 (en) * 2015-03-20 2016-09-22 Xiamen Changelight Co., Ltd. Hv-led module having 3d light-emitting structure and manufacturing method thereof
US9488321B2 (en) 2012-05-29 2016-11-08 Formosa Epitaxy Incorporation Illumination device with inclined light emitting element disposed on a transparent substrate
US20170234698A1 (en) * 2013-03-14 2017-08-17 Itron, Inc. Intelligent Receptacle
CN107768235A (zh) * 2017-10-25 2018-03-06 中国工程物理研究院电子工程研究所 一种基于二硫化钼‑石墨烯复合缓冲层的氮化镓外延结构的制备方法
US10170717B2 (en) * 2015-06-15 2019-01-01 Boe Technology Group Co., Ltd. Thin film transistor and manufacturing method thereof, display substrate, and display apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570904B (zh) * 2012-02-17 2017-02-11 晶元光電股份有限公司 發光二極體元件
US20170095582A1 (en) * 2015-10-01 2017-04-06 Sensor Electronic Technology, Inc. Integrated Flip Chip Device Array
USD834740S1 (en) 2017-09-29 2018-11-27 Pt. Ho Wah Genting Worklight

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759678B2 (en) * 2000-03-06 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
WO2008075797A1 (en) * 2006-12-18 2008-06-26 Seoul Opto Device Co., Ltd. Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
US20080191632A1 (en) * 2005-08-10 2008-08-14 Seoul Opto-Device Co., Ltd. Light Emitting Device and Method of Manufacturing the Same
WO2008105245A1 (ja) * 2007-02-28 2008-09-04 Koa Corporation 発光部品およびその製造法
US20090194777A1 (en) * 2008-02-05 2009-08-06 Hymite A/S Optoelectronic device submount
US20100001305A1 (en) * 2008-07-07 2010-01-07 Visera Technologies Company Limited Semiconductor devices and fabrication methods thereof
US20100051972A1 (en) * 2008-08-28 2010-03-04 Ding-Yuan Chen Light-Emitting Diode Integration Scheme
US20110316034A1 (en) * 2010-06-26 2011-12-29 Trung Tri Doan Side By Side Light Emitting Diode (LED) Having Separate Electrical And Heat Transfer Paths And Method Of Fabrication
US8193015B2 (en) * 2010-11-17 2012-06-05 Pinecone Energies, Inc. Method of forming a light-emitting-diode array with polymer between light emitting devices
US8193546B2 (en) * 2010-06-04 2012-06-05 Pinecone Energies, Inc. Light-emitting-diode array with polymer between light emitting devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3659407B2 (ja) * 2001-08-03 2005-06-15 ソニー株式会社 発光装置
CN101740560B (zh) * 2003-04-01 2012-11-21 夏普株式会社 发光装置、背侧光照射装置、显示装置
CN100364120C (zh) 2004-07-29 2008-01-23 晶元光电股份有限公司 具有黏结层的发光元件阵列
KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
TWI298553B (en) * 2006-05-03 2008-07-01 Feng Guang Technology Corp Light module
CN101071812A (zh) 2006-05-12 2007-11-14 启萌科技有限公司 发光二极管封装模组
TWM328691U (en) 2007-07-13 2008-03-11 Ks Terminals Inc Battery terminal connector and portable digital devices with the connector
TWM328671U (en) * 2007-09-19 2008-03-11 Flexium Interconnect Inc Heat-dissipation flexible circuit board for backlight module
CN101465328A (zh) * 2007-12-21 2009-06-24 深圳富泰宏精密工业有限公司 发光二极管封装及其制造方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759678B2 (en) * 2000-03-06 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US20090267085A1 (en) * 2005-03-11 2009-10-29 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US20080191632A1 (en) * 2005-08-10 2008-08-14 Seoul Opto-Device Co., Ltd. Light Emitting Device and Method of Manufacturing the Same
US20100051977A1 (en) * 2006-12-18 2010-03-04 Seoul Opto Device Co., Ltd. Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
WO2008075797A1 (en) * 2006-12-18 2008-06-26 Seoul Opto Device Co., Ltd. Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
US7947993B2 (en) * 2006-12-18 2011-05-24 Seoul Opto Device Co., Ltd. Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
WO2008105245A1 (ja) * 2007-02-28 2008-09-04 Koa Corporation 発光部品およびその製造法
US20100039044A1 (en) * 2007-02-28 2010-02-18 Michiru Hatakenaka Light-emitting component and its manufacturing method
US7732829B2 (en) * 2008-02-05 2010-06-08 Hymite A/S Optoelectronic device submount
US20090194777A1 (en) * 2008-02-05 2009-08-06 Hymite A/S Optoelectronic device submount
US20100001305A1 (en) * 2008-07-07 2010-01-07 Visera Technologies Company Limited Semiconductor devices and fabrication methods thereof
US20100051972A1 (en) * 2008-08-28 2010-03-04 Ding-Yuan Chen Light-Emitting Diode Integration Scheme
US8193546B2 (en) * 2010-06-04 2012-06-05 Pinecone Energies, Inc. Light-emitting-diode array with polymer between light emitting devices
US20110316034A1 (en) * 2010-06-26 2011-12-29 Trung Tri Doan Side By Side Light Emitting Diode (LED) Having Separate Electrical And Heat Transfer Paths And Method Of Fabrication
US8193015B2 (en) * 2010-11-17 2012-06-05 Pinecone Energies, Inc. Method of forming a light-emitting-diode array with polymer between light emitting devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Kyocera. Fine Ceramics (Advanced Ceramics): About Sapphire. Retrieved on 2014-01-26. http://global.kyocera.com/prdct/fc/list/material/sapphire/index.html *
Kyocera. Fine Ceramics (Advanced Ceramics): Alumina. Retrieved on 2014-01-26. http://global.kyocera.com/prdct/fc/list/material/alumina/alumina.html *

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US8530921B2 (en) 2009-04-06 2013-09-10 Cree, Inc. High voltage low current surface emitting LED
US20100252840A1 (en) * 2009-04-06 2010-10-07 Cree, Inc. High voltage low current surface emitting led
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
CN102693970A (zh) * 2011-03-22 2012-09-26 晶元光电股份有限公司 发光二极管装置
US20130001596A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Deposition of esd protection on printed circuit boards
CN103782400A (zh) * 2011-07-25 2014-05-07 克里公司 包括多组发光二极管的单片多结发光装置
WO2013016355A1 (en) * 2011-07-25 2013-01-31 Cree, Inc. Monolithic multi-junction light emitting devices including multiple groups of light emitting diodes
US9368483B2 (en) 2012-05-29 2016-06-14 Formosa Epitaxy Incorporation Illumination device capable of decreasing shadow of lighting effect
US9711490B2 (en) 2012-05-29 2017-07-18 Epistar Corporation Illumination device
CN103456869A (zh) * 2012-05-29 2013-12-18 璨圆光电股份有限公司 发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板
US9123868B2 (en) 2012-05-29 2015-09-01 Formosa Epitaxy Incorporation Light emitting element and illumination device thereof
US20130320363A1 (en) * 2012-05-29 2013-12-05 Formosa Epitaxy Incorporation Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device
US10989396B2 (en) 2012-05-29 2021-04-27 Epistar Corporation Illumination device
US9488321B2 (en) 2012-05-29 2016-11-08 Formosa Epitaxy Incorporation Illumination device with inclined light emitting element disposed on a transparent substrate
US10655826B2 (en) 2012-05-29 2020-05-19 Epistar Corporation Illumination device
US10281123B2 (en) 2012-05-29 2019-05-07 Epistar Corporation Illumination device
US10030857B2 (en) 2012-05-29 2018-07-24 Epistar Corporation Illumination device
US20170234698A1 (en) * 2013-03-14 2017-08-17 Itron, Inc. Intelligent Receptacle
DE102013113682A1 (de) * 2013-12-09 2015-06-25 Otto-Von-Guericke-Universität Magdeburg Verbindungshalbleiterbauelement
US10043850B2 (en) * 2015-03-20 2018-08-07 Xiamen Changelight Co., Ltd. HV-LED module having 3D light-emitting structure and manufacturing method thereof
US20160276402A1 (en) * 2015-03-20 2016-09-22 Xiamen Changelight Co., Ltd. Hv-led module having 3d light-emitting structure and manufacturing method thereof
US10170717B2 (en) * 2015-06-15 2019-01-01 Boe Technology Group Co., Ltd. Thin film transistor and manufacturing method thereof, display substrate, and display apparatus
CN107768235A (zh) * 2017-10-25 2018-03-06 中国工程物理研究院电子工程研究所 一种基于二硫化钼‑石墨烯复合缓冲层的氮化镓外延结构的制备方法

Also Published As

Publication number Publication date
US20140234997A1 (en) 2014-08-21
TWI495084B (zh) 2015-08-01
TW201103121A (en) 2011-01-16
US8987017B2 (en) 2015-03-24

Similar Documents

Publication Publication Date Title
US8987017B2 (en) Light-emitting device
US11355550B2 (en) Optoelectronic device having conductor arrangement structures non-overlapped with heat dissipation pads
US10644202B2 (en) Electrode of light-emitting device
US8101966B2 (en) Light-emitting diode lamp with low thermal resistance
JP6101001B2 (ja) 発光素子パッケージ及びこれを具備した照明システム
US7525248B1 (en) Light emitting diode lamp
CN102257619B (zh) 发光元件
US7985973B2 (en) Semiconductor light-emitting device and method of fabricating the same
CN103828078B (zh) 半导体发光单元连接体
US20070267642A1 (en) Light-emitting devices and methods for manufacturing the same
US8373195B2 (en) Light-emitting diode lamp with low thermal resistance
TWI445156B (zh) 發光元件
TW201407760A (zh) 發光二極體陣列
TWI517442B (zh) 發光二極體裝置及其製作方法
JP6776347B2 (ja) 発光素子、発光素子の製造方法及び発光モジュール
CN102201399B (zh) 发光元件
TW201205882A (en) Manufacturing method for LED light emitting device
CN103943748B (zh) 发光元件
TWI581398B (zh) 發光元件
US20150084078A1 (en) Light-Emitting Diode Having Diamond-Like Carbon Layer and Manufacturing Method and Application Thereof
TWI629777B (zh) 發光二極體
TWI612653B (zh) 發光二極體
JP2018022911A (ja) 発光素子
JP2014150188A (ja) 発光素子
TW201225361A (en) Light-emitting diode lamp with low thermal resistance

Legal Events

Date Code Title Description
AS Assignment

Owner name: EPISTAR CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HSU, CHIA-LIANG;REEL/FRAME:024646/0785

Effective date: 20100629

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION