US20070296021A1 - Nonvolatile semiconductor memory with backing wirings and manufacturing method thereof - Google Patents

Nonvolatile semiconductor memory with backing wirings and manufacturing method thereof Download PDF

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Publication number
US20070296021A1
US20070296021A1 US11/812,325 US81232507A US2007296021A1 US 20070296021 A1 US20070296021 A1 US 20070296021A1 US 81232507 A US81232507 A US 81232507A US 2007296021 A1 US2007296021 A1 US 2007296021A1
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gate electrode
memory cell
film
region
hard mask
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Hideki Sugiyama
Hideki Hara
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Renesas Electronics Corp
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NEC Electronics Corp
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Publication of US20070296021A1 publication Critical patent/US20070296021A1/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NEC ELECTRONICS CORPORATION
Priority to US13/324,614 priority Critical patent/US8815675B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • the present invention relates to a nonvolatile semiconductor memory with backing wirings and a manufacturing method thereof.
  • FIG. 1 is a sectional view showing a structure of the memory cell having the twin MONOS structure in JP2002-353346A.
  • a memory cell 101 includes a source/drain diffusion layer 144 , a word gate insulating film 126 , a word gate electrode 130 , a control gate electrode 132 , an ONO (Oxide Nitride Oxide) film 131 , a sidewall insulating film 142 , silicide layers 149 , 150 and an LDD (Lightly Doped Drain) diffusion layer 138 .
  • ONO Oxide Nitride Oxide
  • the source/drain diffusion layer 144 is formed on the surface of a semiconductor substrate 120 .
  • the word gate insulating film 126 is formed on a channel region disposed between the source/drain diffusions layers 144 .
  • the word gate electrode 130 is formed on the channel region through the word gate insulating film 126 .
  • the control gate electrode 132 is formed on each of both side surfaces of the word gate electrode 130 through the ONO film 131 .
  • the ONO film 131 is formed between the word gate electrode 130 and the control gate electrode 132 , and between the control gate electrode 132 and the channel region.
  • the sidewall insulating film 142 is formed on each of both sides of the word gate electrode 130 so as to cover the control gate electrode 132 .
  • the silicide layers 149 , 150 are formed on the word gate electrode 130 and the source/drain diffusion layer 144 , respectively.
  • the LDD diffusion layer 138 is formed on the channel region immediately below the sidewall insulating film 142 .
  • Memory cells 101 a , 101 b are placed on an extension of the memory cell 101 and have a memory cell structure. However, the memory cells 101 a , 101 b are provided on a isolation region 123 in order to have contact between the memory cell 101 and an upper metal wiring. Such contact is provided for the following reason.
  • a resistance of the control gate electrode 132 is high due to a structural factor that the control gate electrode 132 is formed on the side surfaces of the word gate electrode 130 and a material factor that the control gate electrode is made of polysilicon. Therefore, overall wiring resistance needs to be decreased by “backing” with a metal wiring of a low resistance.
  • the memory cell 101 a and the memory cell 101 b are connected to each other with a connection layer 135 in a state where the adjacent control gate electrodes 132 are not separated from each other at manufacturing.
  • the control gate electrode 132 is connected to the upper metal wiring (called backing wiring) through the connection layer 135 , a silicide layer 151 on the connection layer 135 and a contact 154 on the silicide layer 151 .
  • the word gate electrode 130 is connected to the upper metal wiring (backing wiring) through the silicide layer 149 and a contact 156 on the silicide layer 149 .
  • FIGS. 2A to 2B are sectional views each showing a part of a manufacturing step of the memory cell having the disclosed twin MONOS structure.
  • a left side of an alternate long and short dash line shows a memory cell region 3 of a nonvolatile semiconductor memory.
  • a right side of the alternate long and short dash line shows a backing region 4 of the nonvolatile semiconductor memory 10 .
  • the word gate insulating film 126 and the word gate electrode 130 are formed on the semiconductor substrate 120 in a memory cell region 3 where the memory cell 101 is formed.
  • the word gate insulating film 126 and the word gate electrode 130 are formed on the isolation region 123 of the semiconductor substrate 120 .
  • an ONO film 128 and a polysilicon film 129 are formed so as to cover surfaces of the semiconductor substrate 120 and the word gate electrode 130 .
  • a hard mask 125 is formed on a lower region of the polysilicon film 129 between the adjacent word gate electrodes 130 . Silicon oxide may be used as the hard mask 125 .
  • the polysilicon film 129 is etched back to remove the polysilicon film 129 except for the area in the vicinity of the side surfaces of the word gate electrode 130 .
  • the control gate electrode 132 is formed in this manner.
  • the polysilicon film 129 between the adjacent control gate electrodes 132 which is protected with the hard mask 125 and is not removed, becomes the connection layer 135 .
  • the ONO film 128 is formed to the ONO film 131 by etching.
  • the ONO film 131 is formed between the word gate electrode 130 and the control gate electrode 132 , and between the semiconductor substrate 120 and the control gate electrode 132 .
  • the ONO film 128 between the adjacent control gate electrodes 132 which is protected with the connection layer 135 and is not removed becomes an ONO film 139 .
  • the hard mask 125 is removed by etching of the ONO film 128 .
  • FIG. 3 is an enlarged sectional view of periphery of the control gate electrode 132 in FIG. 2B .
  • a kink 160 occurs in the vicinity of an end of the hard mask 125 between the part which becomes the control gate electrode 132 and the part which becomes the connection layer 135 . This is due to when the polysilicon film 129 is etched, a boundary between the control gate electrode 132 and the connection layer 135 is insufficiently protected, resulting in the progress of etching.
  • the kink 160 forces connection between the control gate electrode 132 and the connection layer 135 to have a remarkable high resistance or, in the worst case, to be broken. As a result, the function of the backing for reducing overall wiring resistance by connecting the control gate electrode 132 to the metal wiring cannot be achieved.
  • the thickness of the hard mask 125 By making the thickness of the hard mask 125 relatively large, the occurrence of the kink 160 can be prevented. However, even after etching of the ONO film 128 , the thick hard mask 125 still remains. When only a small amount of the hard mask 125 remains, the slicide can not be formed on the connection layer 135 in a subsequent step. As a result, unless the hard mask 125 is completely removed in an additional special step, the resistance between the connection layer 135 and the contact 154 increases. Therefore, there is a demand for the technique capable of preventing the kink from occurring between the control gate electrode and the polysilicon film extended between the control gate electrodes and forming the satisfactory backing wiring structure.
  • a manufacturing method of a nonvolatile semiconductor memory includes: (a) laminating a second insulating film, a gate film and a hard mask film which cover a first gate electrode of a first memory cell transistor formed on a first region of a semiconductor substrate through a first insulating layer and a third gate electrode of a second memory cell transistor formed on a second region of the semiconductor substrate through the first insulating layer; (b) forming a first hard mask layer which covers a bottom portion and a side surface of a concave portion formed using the gate film between the first gate electrode and the third gate electrode by etching the hard mask film; (c) forming a second gate electrode of the first memory cell transistor on the first region, a fourth gate electrode of the second memory cell transistor on the second region, and a connection layer which connects the second gate electrode and the fourth gate electrode under the first hard mask layer by etching the gate film; and
  • the first hard mask layer is formed, which covers the bottom portion and the side surface of the concave portion formed using the gate film between the first gate electrode and the third gate electrode.
  • this first hard mask layer is thin, it has not only the bottom portion but also a sidewall (protrusion which covers the side of the concave portion) rising from the bottom portion.
  • this sidewall (protrusion) achieve the same effect as the fact that the thickness of the first hard mask layer becomes thick with respect to the gate film. That is, since a region contacting the sidewall (protrusion) and the gate film becomes wider than before, etching at the boundary region between a portion to be the connection layer and potions to be the second and fourth gate electrodes is hard to proceed.
  • the kink 160 in FIG. 3 it is possible to prevent occurrence of the kink (the kink 160 in FIG. 3 ) due to etching at the region.
  • the thickness of the first hard mask layer only needs to be relatively thin, at the same time as etching back of the second insulating film at the step (d), the upper surface of the connection layer can be exposed. Thereby, the silicide layer can be formed on the upper surface of the connection layer at a subsequent step without adding any special step.
  • FIG. 1 is a sectional view showing a structure of a memory cell having a twin MONOS structure in JP2002-353346A;
  • FIGS. 2A to 2B are sectional views each showing a part of a manufacturing step of a memory cell having the disclosed twin MONOS structure
  • FIG. 3 is an enlarged sectional view of periphery of a control gate electrode in FIG. 2B ;
  • FIG. 4 is a sectional view showing a structure of an embodiment of a nonvolatile semiconductor memory according to the present invention.
  • FIG. 5 is a top view showing a structure of the embodiment of the nonvolatile semiconductor memory according to the present invention.
  • FIG. 6 is a perspective view showing a structure of the embodiment of the nonvolatile semiconductor memory according to the present invention.
  • FIGS. 7A to 7C are sectional views each showing step of an embodiment of a manufacturing method of the nonvolatile semiconductor memory according to the present invention.
  • FIGS. 8A to 8C are sectional views each showing step of the embodiment of the manufacturing method of the nonvolatile semiconductor memory according to the present invention.
  • FIGS. 9A to 9C are sectional views each showing step of the embodiment of the manufacturing method of the nonvolatile semiconductor memory according to the present invention.
  • FIGS. 10A to 10C are sectional views each showing step of the embodiment of the manufacturing method of the nonvolatile semiconductor memory according to the present invention.
  • FIG. 4 is a sectional view showing a structure of an embodiment of the nonvolatile semiconductor memory according to the present invention.
  • a left side of an alternate long and short dash line shows a memory cell region 3 of a nonvolatile semiconductor memory 10 and illustrates a memory cell 1 .
  • a right side of the alternate long and short dash line shows a backing region 4 of the nonvolatile semiconductor memory 10 and illustrates memory cells 1 a , 1 b .
  • the memory cell region 3 and the backing region 4 are formed on a same semiconductor substrate 20 .
  • the memory cell 1 includes a source/drain diffusion layer 44 , a word gate insulating film 26 , a word gate electrode 30 , a control gate electrode 32 , an ONO (Oxide Nitride Oxide) film 31 , a sidewall insulating film 42 , silicide layers 49 , 50 and an LDD diffusion layer 38 .
  • ONO Oxide Nitride Oxide
  • the source/drain diffusion layer 44 is formed on a surface of the semiconductor substrate 20 .
  • As (arsenic) or P (phosphorus) may be used as a dopant of the source/drain diffusion layer 44 .
  • the word gate insulating film 26 is formed on a channel region disposed between the source/drain diffusion layers 44 . Silicon oxide may be used as the word gate insulating film 26 .
  • the word gate electrode 30 is formed on the channel region through the word gate insulating film 26 . Polysilicon may be used as the word gate electrode 30 .
  • the control gate electrode 32 is formed on each of both side surfaces of the word gate electrode 30 through the ONO film 31 . Polysilicon may be used as the control gate electrode 32 .
  • the ONO film 31 is formed between the word gate electrode 30 and the control gate electrode 32 , and between the control gate electrode 32 and the channel region.
  • a laminated film of silicon oxide, silicon nitride and silicon oxide may be used as the ONO film 31 .
  • the sidewall insulating film 42 is formed on each of both sides of the word gate electrode 30 so as to cover the control gate electrode 32 .
  • a monolayer film of silicon oxide or a laminated film of silicon oxide, silicon nitride and silicon oxide may be used as the sidewall insulating film 42 .
  • the silicide layers 49 , 50 are formed on the word gate electrode 30 and the source/drain diffusion layer 44 , respectively. Cobalt silicide may be used as the silicide layers 49 , 50 .
  • the LDD diffusion layer 38 is formed on the channel region immediately under the sidewall insulating film 42 .
  • As or P may be used as a dopant.
  • the adjacent control gate electrodes 32 of the memory cell 1 each are surrounded by an insulating layer and are insulated from each other.
  • the source/drain diffusion layer 44 is connected to a bit line through the silicide layer 50 and a contact 52 .
  • the memory cells 1 a , 1 b are placed on an extension of the memory cell 1 and have a basically same structure as that of the memory cell 1 .
  • the word gate electrode 30 and the control gate electrode 32 of the memory cells 1 a , 1 b are placed on an extension of the word gate electrode 30 and the control gate electrode 32 of the memory cell 1 , respectively, in an integrated (unified) manner.
  • the electrodes are formed on an isolation region 23 in order to have contact between the memory cell 1 and upper metal wiring for “backing”. For this reason, the memory cell 1 a and the memory cell 1 b do not serve as a memory cell.
  • the memory cell 1 a and the memory cell 1 b are connected to each other with a connection layer 35 in a state where the adjacent control gate electrodes 32 are not separated from each other at manufacturing.
  • the connection layer 35 is made of a same material as the control gate electrode 32 and polysilicon may be used as the connection layer 35 .
  • both the control gate electrodes 32 of the memory cell 1 a and the memory cell 1 b are connected to the upper metal wiring (backing wiring) through the connection layer 35 , the silicide layer 51 and a contact 54 on the connection layer 35 .
  • the connection layer 35 , the silicide layer 51 and a contact 54 on the connection layer 35 form a backing contact structure.
  • a protrusion 37 is formed on each of both ends of the connection layer 35 .
  • Silicon oxide and/or silicon nitride may be used as the protrusions 37 .
  • the protrusions 37 can prevent a kink from being formed in the boundary between the connection layer 35 and the control gate electrode 32 in the below-mentioned manufacturing method. It is more preferred that an upper surface and side surfaces of the control gate electrode 32 are fully covered with the sidewall insulating film 42 .
  • FIG. 5 is a top view showing the structure of the embodiment of the nonvolatile semiconductor memory of the present invention.
  • the memory cell region 3 and the backing region 4 in FIG. 4 show, for example, a cross-section taken along a BB′ and a cross-section taken along an AA′ in FIG. 5 , respectively.
  • the nonvolatile semiconductor memory 10 includes a plurality of word gate electrodes 30 and a plurality of control gate electrodes 32 .
  • Each of the plurality of word gate electrodes 30 extends in the memory cell region 3 and the backing region 4 in an X direction.
  • Each of the plurality of control gate electrodes 32 extends in the memory cell region 3 and the backing region 4 along each of both sides of the word gate electrode 30 via the ONO film 31 in an X direction.
  • the memory cell 1 is a region which is sandwiched between the isolation regions 23 ′ and includes one word gate electrode 30 , the control gate electrodes 32 on the both sides of the word gate electrode 30 and its surrounding region (source/drain diffusion layer).
  • the memory cell 1 is a region surrounded by a rectangular frame in FIG. 5 .
  • the contact 52 is connected to a bit line (not shown).
  • the isolation region 23 is formed on the surface region of the semiconductor substrate 20 .
  • the connection layer 35 extends at intervals while being connected to the adjacent control gate electrode 32 .
  • the connection layer 35 which forms the backing contact structure for the control gate electrodes along with the silicide layer 51 and the contact 54 , is connected to the upper backing wiring (metal wiring).
  • the backing contact structure for word gate electrode which is formed of the silicide layer 49 and the contact 55 is formed on the word gate electrode 30 .
  • FIG. 6 is a perspective view showing the structure of the embodiment of the nonvolatile semiconductor memory of the present invention.
  • FIG. 6 shows the periphery of the backing contact structure in FIG. 5 .
  • the connection layer 35 , the silicide layer 51 and the contact 54 as the backing contact structure are formed on the isolation region 23 in this order.
  • the backing contact structure couples and electrically connects the adjacent control gate electrode 32 to each other.
  • a positive voltage of about 1 V is applied to the word gate electrode 30 .
  • a positive voltage of about 6 V is applied to the control gate electrode 32 on a side where writing is performed (hereinafter, referred to as “selected-side”), and a positive voltage of about 3 V is applied to the control gate electrode 32 on a side where writing is not performed (hereinafter, referred to as “unselected-side”).
  • the selected-side control gate electrode 32 forms a pair with the unselected-side control gate electrode 32 .
  • a positive voltage of about 5 V is applied to the selected-side source/drain diffusion layer 44 and about 0 V is applied to the unselected-side source/drain diffusion layer 44 .
  • hot electrons generated in the channel region are injected into the nitride film of the selected-side ONO film 31 .
  • CHE Channel Hot Electron
  • a positive voltage of about 2 V is applied to the word gate electrode 30 .
  • a positive voltage of about 2 V is applied to the selected-side control gate electrode 32 , and a positive voltage of about 3 V is applied to the unselected-side control gate electrode 32 .
  • About 0 V is applied to the selected-side source/drain diffusion layer 44 and about 1.5 V is applied to the unselected-side source/drain diffusion layer 44 .
  • a threshold value of the memory cell 1 is detected.
  • the threshold value when negative charges are accumulated in the selected-side ONO film 31 is higher than that when negative charges are not accumulated. Therefore, by detecting the threshold value, the data written to the selected-side ONO film 31 can be read out.
  • an application of voltage to the control gate electrode 32 and accompanying current flow are performed through the above-described backing contact structure for the control gate electrode.
  • an application of voltage to the word gate electrode 30 and accompanying current flow are performed through the above-described backing contact structure for the word gate electrode.
  • FIGS. 7A to 7C , 8 A to 8 C, 9 A to 9 C, 10 A to 10 C are sectional views each showing step of the embodiment of the manufacturing method of the nonvolatile semiconductor memory according to the present invention.
  • the left side from an alternate long and short dash line shows the memory cell region 3 and illustrates a manufacturing step of the memory cell 1 .
  • the memory cell region 3 corresponds to, for example, a cross section taken along the line BB′ in FIG. 5 .
  • the right side from the alternate long and short dash line shows the backing region 4 and illustrates a manufacturing step of the memory cells 1 a , 1 b .
  • the backing region 4 corresponds to, for example, a cross section taken along the line AA′ in FIG. 5 .
  • the isolation region 23 and the isolation region 23 ′ are formed in the backing region 4 and the memory cell region 3 , respectively, according to a conventional STI (Shallow Trench Isolation) method.
  • a gate insulating film 22 is formed on the surface of the semiconductor substrate 20 by a thermal oxidation treatment.
  • a thickness of the gate insulating film 22 is, for example, 10 nm.
  • a polysilicon film 21 is formed according to the CVD method so as to cover the gate insulating film 22 .
  • the polysilicon film 21 becomes the word gate electrodes 30 of the memory cells 1 , 1 a , and 1 b later.
  • a thickness of the polysilicon film 21 is, for example, 200 nm.
  • the polysilicon film 21 is etched by photolithography and dry etching process to form the word gate electrodes 30 .
  • a surface of the gate insulating film 22 is exposed, where the word gate electrode 30 does not exist.
  • the gate insulating film 22 is shaped to the word gate insulating films 26 by etching using the word gate electrodes 30 as masks.
  • the word gate insulating films 26 are formed immediately under the word gate electrodes 30 .
  • the surface of the semiconductor substrate 20 (including the isolation regions 23 , 23 ′) is exposed, where the word gate electrode 30 does not exist.
  • a silicon oxide film, a silicon nitride film and a silicon oxide film are laminated in this order so as to cover the surfaces of the semiconductor substrate 20 and the word gate electrode 30 .
  • the silicon oxide films are formed by using the oxidation method and/or CVD method, and the silicon nitride film are formed by using the CVD method. In this manner, an ONO film 28 as a charge storage layer is formed.
  • a polysilicon film 29 is formed by using the CVD method so as to cover the ONO film 28 .
  • the polysilicon film 29 becomes the control gate electrodes 32 later.
  • a silicon oxide film 24 is formed by using the CVD method so as to cover the polysilicon film 29 .
  • a part of the silicon oxide film 24 becomes the protrusions 37 later.
  • an organic film 33 having a predetermined thickness is formed in a concave portion C formed by the polysilicon film 29 and the silicon oxide film 24 between the word gate electrodes 30 .
  • the organic film 33 is, for example, an ARC (Anti Reflective Coating) film.
  • the organic film 33 is formed by a coating process of the ARC film on the silicon oxide film 24 and an etching-back process.
  • the silicon oxide film 24 is etched back to form an approximately U-like shaped (horseshoe like shaped) hard mask layer 25 which covers a bottom and side surfaces of the concave portion C.
  • the parts covering the side surfaces of the concave portion C in the hard mask layer 25 becomes the protrusions 37 later.
  • a thickness of the organic film 33 independently from a thickness of the hard mask layer 25 , a height of the protrusion 37 (height of the sidewall parts of the hard mask layer 25 ) can be controlled. In other words, the thickness and the height of the hard mask layer 25 can be individually set.
  • the backing region 4 is covered with a resist 34 .
  • the hard mask layer 25 in the memory cell region 3 is etched back to remove the hard mask layer 25 in the memory cell region 3 . Then, the resist 34 in the backing region 4 is removed. Thereby, in the memory cell region 3 , the surface of the concave portion C of the polysilicon film 29 is exposed. On the other hand, in the backing region 4 , the hard mask layer 25 remains on the concave portion C of the polysilicon film 29 .
  • the polysilicon film 29 is etched back to remove the polysilicon film 29 except for the areas surrounding the both side surfaces of the word gate electrode 30 .
  • the control gate electrode 32 is formed on the both side surfaces of the word gate electrode 30 through the ONO film 28 .
  • the control gate electrode 32 is formed on the both side surfaces of the word gate electrode 30 through the ONO film 28 .
  • the connection layer 35 for connecting the adjacent control gate electrodes 32 to each other is formed under the hard mask layer 25 .
  • the ONO film 28 and the hard mask layer 25 are etched back to remove the exposed ONO film 28 and a part of the hard mask layer 25 . Thereby, a surface of the word gate electrode 30 is exposed.
  • the ONO film 31 is formed between the word gate electrode 30 and the control gate electrode 32 , and between the semiconductor substrate 20 and the control gate electrode 32 .
  • the hard mask layer 25 corresponding to a bottom part of the concave portion C (a flat part of the hard mask layer 25 ) is removed and the surface of the connection layer 35 except for its both ends is exposed.
  • the sidewall parts of the hard mask layer 25 remain and become the protrusions 37 .
  • An ONO film 39 remains under the connection layer 35 .
  • the flat part of the hard mask layer 25 can be removed without adding any special step.
  • n-type impurities such as arsenic (As) are implanted into the semiconductor substrate 20 .
  • an LDD diffusion layer 38 is formed in a self-aligned manner in the area except for the area immediately under the word gate electrode 30 , the ONO film 31 and the control gate electrode 32 and the isolation region ( 23 ′) on the surface of the semiconductor substrate 20 in the memory cell region 3 .
  • an ion injection is not performed.
  • a sidewall insulating film 40 made of silicon oxide is formed by using the CVD method so as to cover the surface of the semiconductor substrate 20 , the word gate electrodes 30 , the ONO film 31 , the control gate electrodes 32 , the connection layer 35 and the protrusions 37 .
  • the whole surface of the semiconductor substrate 20 is covered with the sidewall insulating film 40 .
  • the sidewall insulating film 40 is etched back and the sidewall insulating film 42 is formed on the side surfaces of the word gate electrode 30 .
  • a top surface of the word gate electrode 30 and the center of the top surface of the connection layer 35 are exposed.
  • the side surfaces and the top surface of the control gate electrode 32 are covered with the sidewall insulating film 42 .
  • n-type impurities such as arsenic are implanted into the semiconductor substrate 20 using the word gate electrode 30 and the sidewall insulating film 42 as masks.
  • the source/drain diffusion layer 44 is formed in a self-aligned manner in areas except for the areas immediately under the word gate electrode 30 and the sidewall 42 and the isolation region 23 ′ on the surface of the memory cell region 3 of the semiconductor substrate 20 .
  • a cobalt film is formed on the whole surface of the semiconductor substrate 20 by using a sputtering method and subjected to a thermal treatment.
  • the silicide layers 49 , 50 are formed (silicidation) in the top surface of the word gate electrode 30 and the surface of the source/drain diffusion layer 44 in the memory cell region 3 , respectively.
  • the silicide layers 49 , 51 are formed (silicidation) in the top surface of the word gate electrode 30 and the surface of the connection layer 35 in the backing region 4 , respectively.
  • a silicide is not formed in a surface of the control gate electrode 32 .
  • a cobalt film except for the silicide layers is removed by etching.
  • the nonvolatile semiconductor memory is manufactured.
  • the hard mask layer 25 is formed between the adjacent word gate electrodes 30 in the backing region 4 so as to cover the bottom surface and the side surfaces of the concave portion C formed of the polysilicon film 29 ( FIG. 8C ).
  • the hard mask layer 25 is thin, it has the bottom part of the concave portion C (flat part of the hard mask layer 25 ) as well as the protrusions 37 as sidewalls rising from the bottom part (parts covering the side surfaces of the concave portion C, that is, the sidewall parts of the hard mask layer 25 ).
  • the protrusions 37 achieve the same effect as the fact that the thickness of the hard mask layer 25 becomes thick with respect to the polysilicon film 29 when the polysilicon film 29 is etched back ( FIG. 9B ).
  • the nonvolatile semiconductor memory may be included in an embedded memory LSI (semiconductor device).
  • connection layer 35 extending between the adjacent control gate electrodes 32 and the control gate electrode 32 .
  • silicide layer can be formed on a connection part between the connection layer 35 and the contact 54 without adding any step. Therefore, a satisfactory backing can be formed.

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US10600802B2 (en) 2018-03-07 2020-03-24 Sandisk Technologies Llc Multi-tier memory device with rounded top part of joint structure and methods of making the same

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JP5613506B2 (ja) * 2009-10-28 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置
US9390927B2 (en) 2013-08-16 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Contact formation for split gate flash memory
JP6518485B2 (ja) 2015-03-30 2019-05-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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