US20040074898A1 - Encapsulated graphite heater and process - Google Patents
Encapsulated graphite heater and process Download PDFInfo
- Publication number
- US20040074898A1 US20040074898A1 US10/277,786 US27778602A US2004074898A1 US 20040074898 A1 US20040074898 A1 US 20040074898A1 US 27778602 A US27778602 A US 27778602A US 2004074898 A1 US2004074898 A1 US 2004074898A1
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- United States
- Prior art keywords
- graphite
- graphite body
- boron nitride
- heater
- pyrolytic boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
Definitions
- the present invention relates to a heating device primarily for use in semiconductor wafer processing equipment.
- a semiconductor wafer is processed at relatively high temperature of up to about 1200° C. in the fabrication of a semiconductor device or semiconductor material.
- the temperature of the semiconductor wafer must be held substantially constant and uniform with thermal uniformity requirements on the order of 1° C. and 10° C.
- a typical semiconductor wafer heater is manufactured from graphite and is currently a platen e.g. 4 to 12 inches in diameter and 0.10 to 0.50 inches thick, or a cylinder e.g. 2′′ to 20′′ in inside diameter, 0.10′′ to 0.50′′ wall, and 2′′ to 40′′ long, the graphite of which is machined into a spiral or serpentine configuration defining a given area to be heated and with the machined graphite body having opposed ends connected to a source of external power.
- a multiple zone heating system is often accomplished with each zone made independently.
- graphite is a refractory material which is economical and temperature resistant, graphite is corroded by some of the wafer processing chemical environments, and it is prone to particle and dust generation. Due to the discontinuous surface of a conventionally machined graphite heater, the power density varies dramatically across the area to be heated. Moreover, a graphite body particularly after machining into a serpentine geometry is fragile and its mechanical integrity is poor and accordingly even if the cross sectional thickness is relatively large, e.g., above about 0.1 inches or greater in thickness, which is typical for semiconductor graphite heater applications, the graphite heater is still extremely weak and must be handled with care.
- a graphite heater changes dimension due to annealing which induces bowing or misalignment and can result in an electrical short circuit. It is also conventional in semiconductor wafer processing to deposit a film on the semiconductor which may be electrically conductive. Such films may also deposit as fugitive coatings on the graphite heater which can also contribute to an electrical short circuit or can also contribute to a change in electrical properties.
- a heater can be formed from a solid graphite body overcoming the inherent fragility and weakness of a solid graphite body and still retain its refractory properties by encapsulating the solid graphite body in a thin film shell composed of pyrolytic boron nitride (pBN) or aluminum nitride and by forming a continuous surface of pyrolytic boron nitride (pBN) or aluminum nitride contiguous to the graphite body for defining a predetermined heating surface.
- pBN pyrolytic boron nitride
- pBN pyrolytic boron nitride
- aluminum nitride aluminum nitride
- the heater is fabricated to provide a continuous solid surface of pyrolytic boron nitride or aluminum nitride on one side of a serpentine machined graphite body, the continuous face eliminates the discontinuous limitation of the prior art providing improved thermal uniformity.
- the graphite heater of the present invention forms a single structurally integral unit which is more stable than a typical graphite heater without any exposed surfaces thereby preventing short circuits and electrical changes from occurring, and insuring a clean, dust and particle free surface.
- pyrolytic boron nitride (pBN) and aluminum nitride encapsulations can provide enhanced corrosion resistance against the wafer processing chemical environment.
- the graphite heater of the present invention comprises a graphite body configured in a spiral or serpentine geometrical shape defining at least one zone of an electrical heating circuit, having opposed ends so as to provide an electrical path for each heating zone through the graphite body from the opposed ends, with said graphite body having a coating of pyrolytic boron nitride or aluminum nitride encapsulating said graphite body and a layer of pyrolytic boron nitride or aluminum nitride disposed on the graphite body to form a solid continuous heating surface.
- the method of the present invention for forming a graphite heater from a solid body composed of graphite having at least one continuous surface comprises the steps of: coating said graphite body in a CVD reactor furnace to form a layer of pyrolytic boron nitride or aluminum nitride on all surfaces of the graphite body; machining said coated graphite body from the side opposite said one continuous surface to form a spiral or serpentine pattern extending through the graphite body up to said one continuous surface such that a solid continuous layer of pyrolytic boron nitride of predetermined thickness is left intact covering the machined graphite body, with each electrical circuit pattern formed in said graphite body, having opposed ends adapted for connection to an external power supply and encapsulating said machined graphite body in a material composition selected from the group consisting of pyrolytic boron nitride or aluminum nitride to form a thin film shell of said material surrounding said heater.
- FIGS. 1 ( a ), ( b ), ( c ), ( d ) and ( e ) illustrate the sequence of steps for fabricating a flat graphite heater in accordance with the present invention
- FIG. 2 is a plan view of a flat heater formed following the sequence of steps of FIGS. 1 ( a ) through 1 ( e ) viewed from the underside of FIG. 1 ( e );
- FIGS. 3 ( a - c ) illustrate a typical cylindrical shaped heater formed in accordance with the present invention in which FIG. 3( a ) represents a top view, FIG. 3( b ) shows the cylindrical heater in cross section taken along the lines A-A of FIG. 3( a ) and FIG. 3( c ) representing an exploded view of the encircled area shown in FIG. 3( b ).
- FIGS. 1 ( a ) through 1 ( e ) The sequence of steps for fabricating a graphite heater in accordance with the present invention is illustrated in FIGS. 1 ( a ) through 1 ( e ) respectively.
- a solid body composed of any conventional graphite material is machined into a base 10 having any desired outside geometry such as rectangular or disk shaped as shown in FIG. 1( a ) and having at least one continuous surface 12 .
- the graphite body could also be a cylinder as shown in FIG. 3 or any other general heater shape.
- the body 10 can be of any desired thickness (d) suitable for the intended application.
- the graphite base 10 should typically be of a thickness above at least about 0.10 inches.
- the graphite base 10 is coated with a layer of pyrolytic boron nitride 14 as shown in FIGS. 1 ( b ) of any desired predetermined thickness of e.g. 0.02 inches.
- the graphite base 10 can be coated with aluminum nitride.
- the coating is preferably formed by chemical vapor deposition (CVD) in a conventional manner.
- CVD chemical vapor deposition
- pBN pyrolytic boron nitride
- pBN is the preferred coating and is typically formed by a chemical vapor deposition process as described in U.S. Pat. No. 3,182,006, the disclosure of which is herein incorporated by reference.
- the process involves introducing vapors of ammonia and a gaseous boron halide such as boron trichloride (BCl 3 ) in a suitable ratio to form a boron nitride deposit on the surface of an appropriate substrate which in the present invention would be the graphite base 10 .
- a gaseous boron halide such as boron trichloride (BCl 3 )
- BCl 3 boron trichloride
- Pyrolytic boron nitride is a dielectric material which is very anisotropic having a thermal conductivity in the plane (planar surface 12 ) of typically 30 times or more above the thermal conductivity through the thickness.
- the coated graphite base 10 is then machined from the side opposite the continuous surface 12 into a desired electrical pattern for resistive heating preferably that of a spiral or serpentine configuration 13 as shown in FIG. 2 having opposite open ends 15 and 16 adapted for connection to an external power supply.
- the machining operation is conducted through the cross sectional body of the graphite base 10 up to the pBN coating 14 on the continuous surface 12 without removing the pBN coating 14 covering the continuous surface 12 i.e., the pBN coating is left intact.
- the pBN coating 14 remains to form a flat solid continuous surface layer of pyrolytic boron nitride in any desired thickness preferably only about 0.01-0.03 inches.
- the machined graphite base plate 10 is again coated with a thin film of a material such as aluminum nitride or another coating of pyrolytic boron nitride to form an overcoat or shell 18 which encapsulates the graphite base 10 and provides a protective coating covering any exposed graphite.
- Electrical contacts are machined through the coatings to expose the graphite at contact locations for connection to an external power source.
- electrical contact extensions can be machined into the graphite base 10 at the outset before coating or added prior to the overcoating operation.
- the pBN coating thickness can be increased to promote thermal uniformity, taking into advantage the high degree of thermal conductivity anisotropy inherent in pBN. It should be understood that additional CVD layers of, eg. pyrolytic graphite, can be added to promote thermal uniformity.
Abstract
A graphite heater and method of forming a graphite heater comprising a graphite body configured in a spiral or serpentine geometrical shape defining at least one zone of an electrical heating circuit having opposed ends so as to provide an electrical path for each heating zone through the graphite body from the opposed ends with said graphite body having at least one heating surface, a coating of pyrolytic boron nitride or aluminum nitride encapsulating said graphite body and a surface layer of pyrolytic boron nitride or aluminum nitride disposed on said graphite body such that said heating surface is continuous and solid.
Description
- The present invention relates to a heating device primarily for use in semiconductor wafer processing equipment.
- A semiconductor wafer is processed at relatively high temperature of up to about 1200° C. in the fabrication of a semiconductor device or semiconductor material. The temperature of the semiconductor wafer must be held substantially constant and uniform with thermal uniformity requirements on the order of 1° C. and 10° C. A typical semiconductor wafer heater is manufactured from graphite and is currently a platen e.g. 4 to 12 inches in diameter and 0.10 to 0.50 inches thick, or a cylinder e.g. 2″ to 20″ in inside diameter, 0.10″ to 0.50″ wall, and 2″ to 40″ long, the graphite of which is machined into a spiral or serpentine configuration defining a given area to be heated and with the machined graphite body having opposed ends connected to a source of external power. Furthermore, a multiple zone heating system is often accomplished with each zone made independently. Although graphite is a refractory material which is economical and temperature resistant, graphite is corroded by some of the wafer processing chemical environments, and it is prone to particle and dust generation. Due to the discontinuous surface of a conventionally machined graphite heater, the power density varies dramatically across the area to be heated. Moreover, a graphite body particularly after machining into a serpentine geometry is fragile and its mechanical integrity is poor and accordingly even if the cross sectional thickness is relatively large, e.g., above about 0.1 inches or greater in thickness, which is typical for semiconductor graphite heater applications, the graphite heater is still extremely weak and must be handled with care. Furthermore, over time a graphite heater changes dimension due to annealing which induces bowing or misalignment and can result in an electrical short circuit. It is also conventional in semiconductor wafer processing to deposit a film on the semiconductor which may be electrically conductive. Such films may also deposit as fugitive coatings on the graphite heater which can also contribute to an electrical short circuit or can also contribute to a change in electrical properties.
- It has been discovered in accordance with the present invention that a heater can be formed from a solid graphite body overcoming the inherent fragility and weakness of a solid graphite body and still retain its refractory properties by encapsulating the solid graphite body in a thin film shell composed of pyrolytic boron nitride (pBN) or aluminum nitride and by forming a continuous surface of pyrolytic boron nitride (pBN) or aluminum nitride contiguous to the graphite body for defining a predetermined heating surface. Moreover, in this configuration, the mechanical strength of the heater is dramatically improved relative to the strength of a conventional graphite heater. In the process of the present invention the heater is fabricated to provide a continuous solid surface of pyrolytic boron nitride or aluminum nitride on one side of a serpentine machined graphite body, the continuous face eliminates the discontinuous limitation of the prior art providing improved thermal uniformity. In addition, the graphite heater of the present invention forms a single structurally integral unit which is more stable than a typical graphite heater without any exposed surfaces thereby preventing short circuits and electrical changes from occurring, and insuring a clean, dust and particle free surface. Furthermore, pyrolytic boron nitride (pBN) and aluminum nitride encapsulations can provide enhanced corrosion resistance against the wafer processing chemical environment.
- The graphite heater of the present invention comprises a graphite body configured in a spiral or serpentine geometrical shape defining at least one zone of an electrical heating circuit, having opposed ends so as to provide an electrical path for each heating zone through the graphite body from the opposed ends, with said graphite body having a coating of pyrolytic boron nitride or aluminum nitride encapsulating said graphite body and a layer of pyrolytic boron nitride or aluminum nitride disposed on the graphite body to form a solid continuous heating surface.
- The method of the present invention for forming a graphite heater from a solid body composed of graphite having at least one continuous surface comprises the steps of: coating said graphite body in a CVD reactor furnace to form a layer of pyrolytic boron nitride or aluminum nitride on all surfaces of the graphite body; machining said coated graphite body from the side opposite said one continuous surface to form a spiral or serpentine pattern extending through the graphite body up to said one continuous surface such that a solid continuous layer of pyrolytic boron nitride of predetermined thickness is left intact covering the machined graphite body, with each electrical circuit pattern formed in said graphite body, having opposed ends adapted for connection to an external power supply and encapsulating said machined graphite body in a material composition selected from the group consisting of pyrolytic boron nitride or aluminum nitride to form a thin film shell of said material surrounding said heater.
- Other advantages of the present invention will become apparent from the following detailed description of the invention when read in conjunction with the accompanying drawings of which:
- FIGS. 1(a), (b), (c), (d) and (e) illustrate the sequence of steps for fabricating a flat graphite heater in accordance with the present invention;
- FIG. 2 is a plan view of a flat heater formed following the sequence of steps of FIGS. 1(a) through 1(e) viewed from the underside of FIG. 1 (e); and
- FIGS. 3(a-c) illustrate a typical cylindrical shaped heater formed in accordance with the present invention in which FIG. 3(a) represents a top view, FIG. 3(b) shows the cylindrical heater in cross section taken along the lines A-A of FIG. 3(a) and FIG. 3(c) representing an exploded view of the encircled area shown in FIG. 3(b).
- The sequence of steps for fabricating a graphite heater in accordance with the present invention is illustrated in FIGS. 1(a) through 1(e) respectively. A solid body composed of any conventional graphite material is machined into a base 10 having any desired outside geometry such as rectangular or disk shaped as shown in FIG. 1(a) and having at least one continuous surface 12. The graphite body could also be a cylinder as shown in FIG. 3 or any other general heater shape. The body 10 can be of any desired thickness (d) suitable for the intended application. For use in semiconductor wafer processing the graphite base 10 should typically be of a thickness above at least about 0.10 inches.
- The graphite base 10 is coated with a layer of pyrolytic boron nitride 14 as shown in FIGS. 1(b) of any desired predetermined thickness of e.g. 0.02 inches. Alternatively the graphite base 10 can be coated with aluminum nitride. In either case the coating is preferably formed by chemical vapor deposition (CVD) in a conventional manner. In this regard, pyrolytic boron nitride (pBN) is the preferred coating and is typically formed by a chemical vapor deposition process as described in U.S. Pat. No. 3,182,006, the disclosure of which is herein incorporated by reference. The process involves introducing vapors of ammonia and a gaseous boron halide such as boron trichloride (BCl3) in a suitable ratio to form a boron nitride deposit on the surface of an appropriate substrate which in the present invention would be the graphite base 10. Pyrolytic boron nitride is a dielectric material which is very anisotropic having a thermal conductivity in the plane (planar surface 12) of typically 30 times or more above the thermal conductivity through the thickness.
- The coated graphite base 10 is then machined from the side opposite the continuous surface 12 into a desired electrical pattern for resistive heating preferably that of a spiral or serpentine configuration 13 as shown in FIG. 2 having opposite open ends 15 and 16 adapted for connection to an external power supply. The machining operation is conducted through the cross sectional body of the graphite base 10 up to the pBN coating 14 on the continuous surface 12 without removing the pBN coating 14 covering the continuous surface 12 i.e., the pBN coating is left intact. The pBN coating 14 remains to form a flat solid continuous surface layer of pyrolytic boron nitride in any desired thickness preferably only about 0.01-0.03 inches.
- Thereafter the machined graphite base plate 10 is again coated with a thin film of a material such as aluminum nitride or another coating of pyrolytic boron nitride to form an overcoat or shell 18 which encapsulates the graphite base 10 and provides a protective coating covering any exposed graphite. Electrical contacts are machined through the coatings to expose the graphite at contact locations for connection to an external power source. Alternatively, electrical contact extensions can be machined into the graphite base 10 at the outset before coating or added prior to the overcoating operation.
- In addition, the pBN coating thickness can be increased to promote thermal uniformity, taking into advantage the high degree of thermal conductivity anisotropy inherent in pBN. It should be understood that additional CVD layers of, eg. pyrolytic graphite, can be added to promote thermal uniformity.
Claims (2)
1. A graphite heater comprising a graphite body configured in a spiral or serpentine geometrical shape defining at least one zone of an electrical heating circuit having opposed ends so as to provide an electrical path for each heating zone through the graphite body from the opposed ends with said graphite body having at least one heating surface, a coating of pyrolytic boron nitride or aluminum nitride encapsulating said graphite body and a surface layer of pyrolytic boron nitride or aluminum nitride disposed on said graphite body such that said heating surface is continuous and solid.
2. A method for forming a graphite heater from a body composed of graphite, comprising the steps of: coating the graphite body in a CVD reactor furnace with a layer of pyrolytic boron nitride or aluminum nitride; machining the coated graphite body from the side opposite said continuous surface to form a spiral or serpentine pattern extending through the graphite body up to said continuous surface such that a solid continuous surface layer of pyrolytic boron nitride or aluminum nitride of predetermined thickness is left intact covering the surface of the machined graphite body, with the spiral pattern formed in said graphite body having opposed ends adapted for connection to an external power supply and encapsulating said machined graphite body in a material composition selected from the group consisting of pyrolytic boron nitride or aluminum nitride to form a thin film shell of such material composition surrounding said heater.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/277,786 US20040074898A1 (en) | 2002-10-21 | 2002-10-21 | Encapsulated graphite heater and process |
| US10/687,212 US7259358B2 (en) | 2002-10-21 | 2003-10-16 | Encapsulated graphite heater and process |
| PCT/US2003/033182 WO2004038768A1 (en) | 2002-10-21 | 2003-10-17 | Encapsulated graphite heater and process |
| JP2004546915A JP4479506B2 (en) | 2002-10-21 | 2003-10-17 | Enclosed graphite heater and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/277,786 US20040074898A1 (en) | 2002-10-21 | 2002-10-21 | Encapsulated graphite heater and process |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/687,212 Continuation-In-Part US7259358B2 (en) | 2002-10-21 | 2003-10-16 | Encapsulated graphite heater and process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20040074898A1 true US20040074898A1 (en) | 2004-04-22 |
Family
ID=32093355
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/277,786 Abandoned US20040074898A1 (en) | 2002-10-21 | 2002-10-21 | Encapsulated graphite heater and process |
| US10/687,212 Expired - Lifetime US7259358B2 (en) | 2002-10-21 | 2003-10-16 | Encapsulated graphite heater and process |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/687,212 Expired - Lifetime US7259358B2 (en) | 2002-10-21 | 2003-10-16 | Encapsulated graphite heater and process |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20040074898A1 (en) |
| JP (1) | JP4479506B2 (en) |
| WO (1) | WO2004038768A1 (en) |
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| WO2006125507A1 (en) * | 2005-05-26 | 2006-11-30 | Eos Gmbh Electro Optical Systems | Radiant heater for heating the building material in a laser sintering device |
| DE102006055055A1 (en) * | 2006-11-22 | 2008-05-29 | Eos Gmbh Electro Optical Systems | Apparatus for layering a three-dimensional object |
| FR2912508A1 (en) * | 2007-02-12 | 2008-08-15 | Commissariat Energie Atomique | Thermal excitation probe fabricating method for use in e.g. transport industry, involves thermally treating carbon substrate fabricated at specific temperature, where temperature is greater than usage temperature of probe |
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| US4264803A (en) * | 1978-01-10 | 1981-04-28 | Union Carbide Corporation | Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization |
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| US6410172B1 (en) * | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
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| US4263528A (en) * | 1978-05-03 | 1981-04-21 | Varian Associates, Inc. | Grid coating for thermionic electron emission suppression |
| US5343022A (en) | 1992-09-29 | 1994-08-30 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
| JPH11354260A (en) * | 1998-06-11 | 1999-12-24 | Shin Etsu Chem Co Ltd | Multiple-layered ceramic heater |
-
2002
- 2002-10-21 US US10/277,786 patent/US20040074898A1/en not_active Abandoned
-
2003
- 2003-10-16 US US10/687,212 patent/US7259358B2/en not_active Expired - Lifetime
- 2003-10-17 JP JP2004546915A patent/JP4479506B2/en not_active Expired - Lifetime
- 2003-10-17 WO PCT/US2003/033182 patent/WO2004038768A1/en active Application Filing
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120292308A1 (en) * | 2003-11-21 | 2012-11-22 | Watlow Electric Manufacturing Company | Two-wire layered heater system |
| US8073315B2 (en) | 2005-05-26 | 2011-12-06 | Eos Gmbh Electro Optical Systems | Radiant heater for heating the building material in a laser sintering device |
| US20080131104A1 (en) * | 2005-05-26 | 2008-06-05 | Jochen Philippi | Radiant Heater For Heating the Building Material in a Laser Sintering Device |
| WO2006125507A1 (en) * | 2005-05-26 | 2006-11-30 | Eos Gmbh Electro Optical Systems | Radiant heater for heating the building material in a laser sintering device |
| DE102005024790A1 (en) * | 2005-05-26 | 2006-12-07 | Eos Gmbh Electro Optical Systems | Radiant heating for heating the building material in a laser sintering device |
| DE102006055055A1 (en) * | 2006-11-22 | 2008-05-29 | Eos Gmbh Electro Optical Systems | Apparatus for layering a three-dimensional object |
| US20080131540A1 (en) * | 2006-11-22 | 2008-06-05 | Eos Gmbh Electro Optical Systems | Device for a layerwise manufacturing of a three-dimensional object |
| US8366432B2 (en) | 2006-11-22 | 2013-02-05 | Eos Gmbh Electro Optical Systems | Device for a layerwise manufacturing of a three-dimensional object |
| EP2667685A1 (en) * | 2007-01-21 | 2013-11-27 | Momentive Performance Materials Inc. | Encapsulated graphite heater and process |
| EP2111727B1 (en) * | 2007-01-21 | 2016-04-13 | Momentive Performance Materials Inc. | Encapsulated graphite heater and process |
| FR2912508A1 (en) * | 2007-02-12 | 2008-08-15 | Commissariat Energie Atomique | Thermal excitation probe fabricating method for use in e.g. transport industry, involves thermally treating carbon substrate fabricated at specific temperature, where temperature is greater than usage temperature of probe |
| US20120223069A1 (en) * | 2008-01-18 | 2012-09-06 | Momentive Performance Materials, Inc. | Resistance heater |
| US8993939B2 (en) * | 2008-01-18 | 2015-03-31 | Momentive Performance Materials Inc. | Resistance heater |
| US20210092800A1 (en) * | 2018-02-20 | 2021-03-25 | Applied Materials, Inc. | PBN Heaters For ALD Temperature Uniformity |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4479506B2 (en) | 2010-06-09 |
| US20040074899A1 (en) | 2004-04-22 |
| JP2006504242A (en) | 2006-02-02 |
| WO2004038768A1 (en) | 2004-05-06 |
| US7259358B2 (en) | 2007-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: ADVANCED CERAMICS CORPORATION, OHIO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MARINER, JOHN T.;HEJL, TIMOTHY J.;REEL/FRAME:013443/0981 Effective date: 20021018 |
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| AS | Assignment |
Owner name: GENERAL ELECTRIC COMPANY, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ADVANCED CERAMICS CORPORATION;REEL/FRAME:014022/0403 Effective date: 20021105 Owner name: GENERAL ELECTRIC COMPANY, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ADVANCED CERAMICS CORPORATION;REEL/FRAME:014000/0617 Effective date: 20021105 |
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| STCB | Information on status: application discontinuation |
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