JPH08227933A - Wafer heater with electrostatic attracting function - Google Patents
Wafer heater with electrostatic attracting functionInfo
- Publication number
- JPH08227933A JPH08227933A JP3048395A JP3048395A JPH08227933A JP H08227933 A JPH08227933 A JP H08227933A JP 3048395 A JP3048395 A JP 3048395A JP 3048395 A JP3048395 A JP 3048395A JP H08227933 A JPH08227933 A JP H08227933A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- bonded
- insulating layer
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は昇温工程を含む半導体プ
ロセスに使用される静電吸着機能を有するウエハ加熱装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer heating apparatus having an electrostatic attraction function used in a semiconductor process including a temperature raising step.
【０００２】[0002]
【従来の技術】半導体デバイスの製造工程における半導
体ウエハの加熱には、従来金属線を巻いたヒーターが使
用されていたが、これについては半導体ウエハへの金属
汚染の問題があるため、セラミックスの薄膜を発熱体と
して使用した、セラミックス一体型ウエハ加熱装置の使
用が提案されている（特開平４−１２４０７６号公報参
照）。また、この半導体ウエハの加熱に当たってはヒー
ター上に半導体ウエハを固定するために減圧雰囲気では
静電吸着装置が使用されているが、プロセスの高温化に
伴ってその材質が樹脂からセラミックスに移行されてお
り（特開昭５２−６７３５３号公報、特開昭５９−１２
４１４０号公報参照）、また最近ではこれらのセラミッ
クス一体型ウエハ加熱装置と静電吸着装置を合体した静
電吸着機能を有するウエハ加熱装置も提案されており、
エッチング工程などの低温域では静電吸着装置の絶縁層
にアルミナを用いたものが（特開昭５９−１２４１４０
号公報参照）、またＣＶＤ工程などの高温域においては
静電吸着装置の絶縁層に熱分解窒化硼素を用いたものが
使用されている（特開平４−３５８０７４号公報、特開
平５−１０９８７６号公報、特開平５−１２９２１０号
公報、特願平５−１５２０１５号公報参照）。2. Description of the Related Art Conventionally, a heater wound with a metal wire has been used for heating a semiconductor wafer in a semiconductor device manufacturing process. However, this has a problem of metal contamination on the semiconductor wafer. It has been proposed to use a ceramics-integrated wafer heating device that uses as a heating element (see Japanese Laid-Open Patent Publication No. 4-124076). Further, in heating the semiconductor wafer, an electrostatic adsorption device is used in a depressurized atmosphere to fix the semiconductor wafer on a heater, but as the temperature of the process rises, the material is changed from resin to ceramics. (Japanese Patent Application Laid-Open No. 52-67353, Japanese Patent Application Laid-Open No. 59-12
No. 4140), and recently, a wafer heating device having an electrostatic attraction function, which is a combination of the ceramics-integrated wafer heating device and the electrostatic attraction device, has been proposed.
In the low temperature region such as the etching process, the one using alumina for the insulating layer of the electrostatic adsorption device is disclosed in JP-A-59-124140.
In the high temperature region such as the CVD process, the one using pyrolytic boron nitride for the insulating layer of the electrostatic adsorption device is used (JP-A-4-358074 and JP-A-5-109876). Japanese Patent Application Laid-Open No. 5-129210 and Japanese Patent Application No. 5-152015).
【０００３】[0003]
【発明が解決しようとする課題】ここで、文献（渡部俊
也：ニューセラミックス、(７)、49〜53(1994)）に記述さ
れているように、静電吸着力はこの絶縁層の体積抵抗率
が低くなれば強くなるが、低過ぎるとリーク電流による
デバイスの破損が生じるため、静電吸着装置の絶縁層の
体積抵抗率は1010〜1013Ωcm、好ましくは1011Ωcmであ
る必要があるとされる。しかし５００℃から６５０℃ま
での中温域では、アルミナを絶縁層に用いた場合には抵
抗率が低くなり過ぎリーク電流によるデバイスの破損が
発生し、熱分解窒化硼素を用いた場合には抵抗率が高く
なり過ぎるため十分な静電吸着力（ 100〜500gf/cm2 ）
が得られないという問題があった。As described in the literature (Toshiya Watanabe: New Ceramics, (7), 49-53 (1994)), the electrostatic adsorption force is the volume resistance of this insulating layer. If the rate is low, the strength will be strong, but if it is too low, the device will be damaged by leakage current.Therefore, the volume resistivity of the insulating layer of the electrostatic chuck should be 10 10 to 10 13 Ωcm, preferably 10 11 Ωcm. It is supposed to be. However, in the medium temperature range from 500 ° C to 650 ° C, the resistivity becomes too low when alumina is used for the insulating layer, and the device is damaged by leak current, and the resistivity when pyrolytic boron nitride is used. The electrostatic attraction force (100 to 500gf / cm 2 ) is sufficient because the temperature becomes too high.
There was a problem that could not be obtained.
【０００４】[0004]
【課題を解決するための手段】本発明はこのような不
利、欠点を解消した５００〜６５０℃の中温域での使用
に適する静電吸着機能を有するウエハ加熱装置に関する
もので、これは窒化硼素と窒化アルミニウムの混合焼結
体からなる支持基材の一方の面に熱分解グラファイトか
らなる発熱層を接合し、その上に熱分解窒化硼素からな
る絶縁層を接合し、該基材の他方の面に熱分解グラファ
イトからなる静電吸着用電極を接合し、その上に１〜１
０重量％の珪素を含有する熱分解窒化硼素からなる絶縁
層を接合してなることを特徴とする静電吸着機能を有す
るウエハ加熱装置を要旨とするものである。SUMMARY OF THE INVENTION The present invention relates to a wafer heating apparatus having an electrostatic adsorption function suitable for use in a medium temperature range of 500 to 650.degree. A heat-generating layer made of pyrolytic graphite is bonded to one surface of a supporting base material made of a mixed sintered body of aluminum and aluminum nitride, and an insulating layer made of pyrolytic boron nitride is bonded thereon, and the other side of the base material is joined. Electrodes for electrostatic adsorption made of pyrolytic graphite are bonded to the surface, and 1-1
The present invention is directed to a wafer heating device having an electrostatic adsorption function, which is formed by joining an insulating layer made of pyrolytic boron nitride containing 0% by weight of silicon.
【０００５】すなわち、本発明者らは従来公知の絶縁層
に熱分解窒化硼素を用いた静電吸着機能を有するウエハ
加熱装置における、中温域における静電吸着力の低下を
防止する方法について種々検討した結果、これについて
は、窒化硼素と窒化アルミニウムの混合焼結体からなる
支持基材の一方の面に熱分解グラファイトからなる発熱
層を接合し、その上に熱分解窒化硼素からなる絶縁層を
接合し、該基材の他方の面に熱分解グラファイトからな
る静電吸着用電極を接合し、その上に熱分解窒化硼素か
らなる絶縁層を接合してなる静電吸着機能を有するウエ
ハ加熱装置において、この静電吸着用電極上の絶縁層に
１〜１０重量％の珪素を含有させればこの中温域での静
電吸着力の低下が起こらなくなるということを見いだ
し、本発明を完成させた。以下にこれをさらに詳述す
る。That is, the inventors of the present invention have variously studied a method for preventing a decrease in electrostatic attraction force in a medium temperature range in a wafer heating device having an electrostatic attraction function using a conventionally known pyrolytic boron nitride for an insulating layer. As a result, with respect to this, a heat generating layer made of pyrolytic graphite was bonded to one surface of a supporting base material made of a mixed sintered body of boron nitride and aluminum nitride, and an insulating layer made of pyrolytic boron nitride was bonded onto it. A wafer heating device having an electrostatic adsorption function, which is obtained by joining an electrode for electrostatic adsorption made of pyrolytic graphite to the other surface of the base material and an insulating layer made of pyrolytic boron nitride on the electrode. In addition, it was found that if the insulating layer on the electrode for electrostatic attraction contains 1 to 10% by weight of silicon, the electrostatic attraction force does not decrease in this intermediate temperature range, and the present invention is completed. It was. This will be described in more detail below.
【０００６】本発明は静電吸着機能を有するウエハ加熱
装置に関するものであり、図１に示すように、これは窒
化硼素と窒化アルミニウムの混合焼結体からなる支持基
材１の一方の面に熱分解グラファイトからなる発熱層２
を接合し、その上に熱分解窒化硼素からなる第一の絶縁
層３を接合し、該基材の他方の面に熱分解グラファイト
からなる静電吸着用電極層４を接合し、その上に１〜１
０重量％の珪素を含有する熱分解窒化硼素からなる第二
の絶縁層５を接合してなることを特徴とするものであ
る。これによれば中温域において静電吸着力が低下する
ことがなくなるのでこの静電吸着機能を有するウエハ加
熱装置とウエハとの密着面積が増え、ウエハの温度分布
がより均一になるという有利性が与えられる。The present invention relates to a wafer heating apparatus having an electrostatic adsorption function, and as shown in FIG. 1, this is provided on one surface of a supporting substrate 1 made of a mixed sintered body of boron nitride and aluminum nitride. Heating layer 2 made of pyrolytic graphite
Is bonded, a first insulating layer 3 made of pyrolytic boron nitride is bonded thereon, and an electrostatic attraction electrode layer 4 made of pyrolytic graphite is bonded to the other surface of the base material, 1-1
It is characterized in that a second insulating layer 5 made of pyrolytic boron nitride containing 0% by weight of silicon is joined. According to this, since the electrostatic attraction force does not decrease in the middle temperature range, the contact area between the wafer heating device having the electrostatic attraction function and the wafer increases, and the temperature distribution of the wafer becomes more uniform. Given.
【０００７】従来公知の静電吸着機能を有するウエハ加
熱装置は、窒化硼素と窒化アルミニウムの混合焼結体か
らなる支持基材の一方の面に熱分解グラファイトからな
る発熱層を接合し、その上に熱分解窒化硼素からなる絶
縁層を接合し、該基材の他方の面に熱分解グラファイト
からなる静電吸着用電極を接合し、その上に熱分解窒化
硼素からなる絶縁層を接合したものである。しかし、こ
の公知の構成では５００〜６５０℃における絶縁層の熱
分解窒化硼素の体積抵抗率が大きいため十分な静電吸着
力が得られず、ウエハとウエハ加熱装置との密着性が悪
く温度分布が不均一になり、これによって製造されるデ
バイスの特性にばらつきを生じさせるという重大な欠点
がある。In a conventionally known wafer heating apparatus having an electrostatic adsorption function, a heat-generating layer made of pyrolytic graphite is bonded to one surface of a supporting base material made of a mixed sintered body of boron nitride and aluminum nitride, and further on it. To which an insulating layer made of pyrolytic boron nitride is joined, an electrode for electrostatic adsorption made of pyrolytic graphite is joined to the other surface of the base material, and an insulating layer made of pyrolytic boron nitride is joined thereon. Is. However, in this known configuration, since the volume resistivity of the pyrolytic boron nitride of the insulating layer at 500 to 650 ° C. is large, a sufficient electrostatic attraction force cannot be obtained, and the adhesion between the wafer and the wafer heating device is poor and the temperature distribution is low. Has a serious drawback that it causes non-uniformity, which causes variations in characteristics of manufactured devices.
【０００８】しかるに本発明に従って、静電吸着用電極
上の絶縁層を１〜１０重量％の珪素を含有する熱分解窒
化硼素からなるものとすれば、５００〜６５０℃の中温
域において十分な静電吸着力が得られ、ウエハの温度分
布はより均一なものになり、またリーク電流によるデバ
イスの損傷も発生しない。したがって本発明の静電吸着
機能を有するウエハ加熱装置を使用すれば、デバイス歩
留りが大幅に向上するという有利性が与えられる。な
お、珪素の含有率を１重量％未満とした場合はこの温度
範囲では十分な静電吸着力が得られず、一方、珪素の含
有率を１０重量％より大きくした場合は、この温度範囲
ではリーク電流によるデバイスの損傷が起こる。図２は
加熱温度に対する各種絶縁層の体積抵抗率を表したもの
であり、ＰＢＮは熱分解窒化硼素を、ＰＳｉＢＮ(1%)は
１重量％の珪素を含有する熱分解窒化硼素を、ＰＳｉＢ
Ｎ(10%) は10重量％の珪素を含有する熱分解窒化硼素
を、Ａｌ2Ｏ3 はアルミナを示す。これはＰＢＮ中のシ
リコン量を１〜１０重量％の範囲で適当に選ぶことによ
り、温度５００〜６５０℃で体積抵抗率をおよそ1010〜
1013Ωcmの範囲とすることができることを示している。According to the present invention, however, if the insulating layer on the electrode for electrostatic adsorption is made of pyrolytic boron nitride containing 1 to 10% by weight of silicon, sufficient static electricity is maintained in the medium temperature range of 500 to 650.degree. Electroadhesive force is obtained, the temperature distribution of the wafer becomes more uniform, and device damage due to leakage current does not occur. Therefore, the use of the wafer heating apparatus having the electrostatic attraction function of the present invention provides the advantage that the device yield is significantly improved. If the silicon content is less than 1% by weight, sufficient electrostatic adsorption force cannot be obtained in this temperature range, while if the silicon content is greater than 10% by weight, Device damage due to leakage current occurs. FIG. 2 shows the volume resistivity of various insulating layers with respect to the heating temperature. PBN is pyrolytic boron nitride, PSiBN (1%) is pyrolytic boron nitride containing 1% by weight of silicon, and PSiB.
N (10%) means pyrolytic boron nitride containing 10% by weight of silicon, and Al 2 O 3 means alumina. This is because the volume resistivity at a temperature of 500 to 650 ° C. is about 10 10 〜 by properly selecting the amount of silicon in PBN in the range of 1 to 10 wt%.
It shows that it can be in the range of 10 13 Ωcm.
【０００９】本発明の静電吸着機能を有するウエハ加熱
装置は上記したように、窒化硼素と窒化アルミニウムの
混合焼結体からなる支持基材、該基材の一方の面に接合
された熱分解グラファイトからなる発熱層、及びその上
に設けられた主成分が熱分解窒化硼素からなる第１の絶
縁層、該基材の他方の面に接合された熱分解グラファイ
トからなる静電吸着用電極、及びその上に設けられた１
〜１０重量％の珪素を含有する熱分解窒化硼素からなる
第２の絶縁層から構成されたものとされる。As described above, the wafer heating apparatus having the electrostatic adsorption function of the present invention has a supporting base material composed of a mixed sintered body of boron nitride and aluminum nitride, and a thermal decomposition bonded to one surface of the base material. A heat generating layer made of graphite, a first insulating layer having a main component made of pyrolytic boron nitride provided thereon, an electrostatic adsorption electrode made of pyrolytic graphite bonded to the other surface of the base material, And the one provided on it
The second insulating layer is composed of pyrolytic boron nitride containing 10 to 10% by weight of silicon.
【００１０】支持基材の窒化硼素と窒化アルミニウムの
混合物は公知の方法で焼結させて得たものとすれば良
い。窒化硼素と窒化アルミニウムの混合割合は、アルミ
ニウムが多すぎると線膨張係数が大きすぎるという問題
があり、少なすぎると線膨張係数が小さすぎるという問
題があるので、重量比で１：0.05〜１の範囲とすればよ
い。発熱層及び静電吸着用電極の熱分解グラファイト
は、例えばメタンガスを1900〜2200℃、５Torrという条
件下で熱分解することによって得られたものとすれば良
い。この厚さは薄すぎると強度不足の問題があり、厚す
ぎると剥離の問題があるので10〜300 μｍとすればよ
い。第１の絶縁層は主成分が熱分解窒化硼素よりなり、
これは例えばアンモニアと三塩化硼素との容量混合比
４：１の混合気体を1800〜2000℃、１０Torrの条件下で
熱分解することによって得られたものとすれば良い。こ
の厚さは薄すぎると強度不足の問題があり、厚すぎると
剥離の問題があるので50〜500 μｍとすればよい。ま
た、第２の絶縁層は１〜１０重量％の珪素を含有した熱
分解窒化硼素からなるものとすることが必要とされるの
であるが、これは例えばアンモニアと三塩化硼素と四塩
化珪素の容量混合比40：９：１〜24：５：１の混合気体
を1600〜2000℃、５〜１０Torrの条件下で化学気相蒸着
することによって得られたものとすれば良い。また、こ
の厚さは薄すぎると絶縁破壊の問題があり、厚すぎると
静電吸着力の低下の問題があるので50〜500 μｍとすれ
ばよい。なお、第１の絶縁層は第２の絶縁層と同じ１〜
１０重量％の珪素を含有した熱分解窒化硼素からなるも
のとしてもよく、こうすると製造工程が簡略化されるの
でコスト的に有利となる。The mixture of boron nitride and aluminum nitride as the supporting substrate may be obtained by sintering by a known method. The mixing ratio of boron nitride and aluminum nitride has a problem that the linear expansion coefficient is too large when the amount of aluminum is too large, and the linear expansion coefficient is too small when the amount is too small. It should be a range. The pyrolytic graphite of the heat generating layer and the electrode for electrostatic adsorption may be obtained, for example, by thermally decomposing methane gas under the conditions of 1900 to 2200 ° C. and 5 Torr. If the thickness is too thin, there is a problem of insufficient strength, and if it is too thick, there is a problem of peeling. Therefore, the thickness may be set to 10 to 300 μm. The first insulating layer is mainly composed of pyrolytic boron nitride,
This may be obtained, for example, by thermally decomposing a mixed gas of ammonia and boron trichloride with a volume mixing ratio of 4: 1 under the conditions of 1800 to 2000 ° C. and 10 Torr. If the thickness is too thin, there is a problem of insufficient strength, and if it is too thick, there is a problem of peeling. Therefore, the thickness may be set to 50 to 500 μm. Also, the second insulating layer is required to be made of pyrolytic boron nitride containing 1 to 10% by weight of silicon, which is composed of, for example, ammonia, boron trichloride and silicon tetrachloride. It may be obtained by chemical vapor deposition of a mixed gas having a volume mixing ratio of 40: 9: 1 to 24: 5: 1 under the conditions of 1600 to 2000 ° C. and 5 to 10 Torr. If this thickness is too thin, there is a problem of dielectric breakdown, and if it is too thick, there is a problem of a decrease in electrostatic adsorption force. Therefore, the thickness may be 50 to 500 μm. Note that the first insulating layer is the same as the second insulating layer 1 to
It may be made of pyrolytic boron nitride containing 10% by weight of silicon, which is advantageous in terms of cost because the manufacturing process is simplified.
【００１１】[0011]
【作用】このようにして１〜１０重量％の珪素を含有す
る熱分解窒化硼素からなる絶縁層を有する、本発明の静
電吸着機能を有するウエハ加熱装置は、５００〜６５０
℃の中温域において十分な静電吸着力が得られ、したが
ってウエハ温度分布の均一性が向上し、かつリーク電流
によるデバイスの損傷も起こらないため、デバイス歩留
が大幅に向上するという有利性が与えられる。In this way, the wafer heating apparatus having the electrostatic adsorption function of the present invention having the insulating layer made of pyrolytic boron nitride containing 1 to 10% by weight of silicon is 500 to 650.
A sufficient electrostatic attraction force can be obtained in the middle temperature range of ℃, thus the uniformity of the wafer temperature distribution is improved, and the damage of the device due to the leakage current does not occur, so the device yield is greatly improved. Given.
【００１２】[0012]
【実施例】つぎに本発明の実施例をあげる。 実施例 窒化硼素粉末と窒化アルミニウム粉末を重量比で３対１
の割合で混合したのち、1900℃、200kgf／mm2 の条件下
で焼結し、直径 200mm、厚さ１０mmの窒化硼素と窒化ア
ルミニウムの混合焼結体からなる円板を作った。ついで
この上でメタンガスを2200℃、５Torrの条件下で熱分解
してこの円板上に厚さ１００μｍの熱分解グラファイト
層を形成し、表面の熱分解グラファイト層より電極パタ
ーンを、また裏面の熱分解グラファイト層よりヒーター
パターンを加工してそれぞれを静電吸着用電極と発熱層
とした。ついで反応ガスとしてアンモニアと三塩化硼素
と四塩化珪素を32：７：１の容量混合比で流し、1600
℃、５Torrの条件下で熱分解反応させてこの円板上に厚
さ２００μｍの珪素含有熱分解窒化硼素絶縁層を設ける
ことにより、静電吸着機能を有するウエハ加熱装置を作
った。この絶縁層の珪素含有率を測定したところ、７重
量％であった。この静電吸着機能を有するウエハ加熱装
置を使用し、シリコンウエハを６００℃に加熱し、その
上にポリシリコン膜を堆積したところ、ウエハ上の温度
分布は±５℃、ポリシリコン膜の厚さの分布は0.10〜0.
11μｍであった。EXAMPLES Next, examples of the present invention will be given. Example A weight ratio of boron nitride powder and aluminum nitride powder is 3: 1.
After mixing at a ratio of 1900 ° C. and 200 kgf / mm 2 , the disc was made of a mixed sintered body of boron nitride and aluminum nitride having a diameter of 200 mm and a thickness of 10 mm. Then, methane gas was pyrolyzed on this disk under the conditions of 2200 ° C. and 5 Torr to form a pyrolytic graphite layer with a thickness of 100 μm on this disc. A heater pattern was processed from the decomposed graphite layer to form an electrostatic attraction electrode and a heating layer, respectively. Then, as reaction gas, ammonia, boron trichloride and silicon tetrachloride were caused to flow at a volume mixing ratio of 32: 7: 1, and 1600
A wafer heating device having an electrostatic adsorption function was produced by performing a thermal decomposition reaction under the conditions of ° C and 5 Torr to provide a 200 µm thick silicon-containing thermally decomposed boron nitride insulating layer on this disk. The silicon content of this insulating layer was measured and found to be 7% by weight. Using this wafer heating device having an electrostatic adsorption function, a silicon wafer was heated to 600 ° C. and a polysilicon film was deposited thereon. The temperature distribution on the wafer was ± 5 ° C., and the thickness of the polysilicon film was Has a distribution of 0.10 to 0.
It was 11 μm.
【００１３】比較例 比較のために、絶縁層の反応ガスから四塩化珪素を除い
た以外は、実施例と同じ構成で、該静電吸着機能を有す
るウエハ加熱装置を作り、これについて同様の方法でシ
リコンウエハの上にポリシリコン膜の堆積を行ったとこ
ろ、ウエハ上の温度分布は±１３℃、ポリシリコン膜の
厚さの分布は0.08〜0.12μｍと悪かった。Comparative Example For comparison, a wafer heating apparatus having the same electrostatic adsorption function was made with the same configuration as that of Example except that silicon tetrachloride was removed from the reaction gas of the insulating layer. When a polysilicon film was deposited on the silicon wafer, the temperature distribution on the wafer was ± 13 ° C. and the thickness distribution of the polysilicon film was 0.08 to 0.12 μm, which were bad.
【００１４】[0014]
【発明の効果】本発明の装置を用いれば、５００〜６５
０℃の中温域において十分な静電吸着力が得られ、した
がってウエハ温度分布の均一性が向上し、かつリーク電
流によるデバイスの損傷も起こらないため、デバイス歩
留りが大幅に向上するという有利性が与えられる。When the device of the present invention is used, the value of 500 to 65 can be obtained.
Sufficient electrostatic adsorption force can be obtained in the middle temperature range of 0 ° C., so that the uniformity of the wafer temperature distribution is improved and the device is not damaged by the leak current. Therefore, the device yield is significantly improved. Given.
【図１】本発明による、静電吸着機能を有するウエハ加
熱装置の断面模式図。FIG. 1 is a schematic sectional view of a wafer heating apparatus having an electrostatic attraction function according to the present invention.
【図２】下記絶縁層の、加熱温度に対する体積抵抗率。 □ ＰＢＮ 熱分解窒化硼素 ● ＰＳｉＢＮ(1%) １重量％の珪素を含有する熱分
解窒化硼素 ○ ＰＳｉＢＮ(10%) 10重量％の珪素を含有する熱分
解窒化硼素 △ Ａｌ2 Ｏ3 アルミナFIG. 2 is a volume resistivity of the following insulating layer with respect to a heating temperature. □ PBN Pyrolytic Boron Nitride ● PSiBN (1%) Pyrolytic Boron Nitride Containing 1 wt% Silicon ○ PSiBN (10%) Pyrolytic Boron Nitride Containing 10 wt% Silicon △ Al 2 O 3 Alumina
１ 支持基材 ２ 発熱層 ３ 第一の絶縁層 ４ 静電吸着用電極層 ５ 第二の絶縁層 1 Supporting Base Material 2 Heating Layer 3 First Insulating Layer 4 Electrostatic Adsorption Electrode Layer 5 Second Insulating Layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 長尾 貴章 群馬県安中市磯部２丁目13番１号 信越化 学工業株式会社精密機能材料研究所内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Takaaki Nagao 2-13-1, Isobe, Annaka-shi, Gunma Shin-Etsu Chemical Co., Ltd. Precision Materials Research Laboratory
Claims (1)
体からなる支持基材の一方の面に熱分解グラファイトか
らなる発熱層を接合し、その上に熱分解窒化硼素からな
る絶縁層を接合し、該基材の他方の面に熱分解グラファ
イトからなる静電吸着用電極を接合し、その上に１〜１
０重量％の珪素を含有する熱分解窒化硼素からなる絶縁
層を接合してなることを特徴とする静電吸着機能を有す
るウエハ加熱装置。1. A heat-generating layer made of pyrolytic graphite is bonded to one surface of a supporting substrate made of a mixed sintered body of boron nitride and aluminum nitride, and an insulating layer made of pyrolytic boron nitride is bonded thereon. , An electrode for electrostatic adsorption made of pyrolytic graphite is bonded to the other surface of the base material, and 1 to 1 is bonded on the electrode.
A wafer heating apparatus having an electrostatic adsorption function, which is formed by joining an insulating layer made of pyrolytic boron nitride containing 0% by weight of silicon.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3048395A JPH08227933A (en) | 1995-02-20 | 1995-02-20 | Wafer heater with electrostatic attracting function |
| US08/603,155 US5663865A (en) | 1995-02-20 | 1996-02-20 | Ceramic electrostatic chuck with built-in heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3048395A JPH08227933A (en) | 1995-02-20 | 1995-02-20 | Wafer heater with electrostatic attracting function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08227933A true JPH08227933A (en) | 1996-09-03 |
Family
ID=12305094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3048395A Pending JPH08227933A (en) | 1995-02-20 | 1995-02-20 | Wafer heater with electrostatic attracting function |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5663865A (en) |
| JP (1) | JPH08227933A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998047176A1 (en) * | 1997-04-11 | 1998-10-22 | The Morgan Crucible Company Plc | Composite ceramic dielectrics |
| JP2002043033A (en) * | 2000-07-19 | 2002-02-08 | Nhk Spring Co Ltd | Heater unit, and method of manufacturing the same |
| EP2071610A2 (en) | 2007-10-26 | 2009-06-17 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant multilayer ceramic member |
| JP2022050408A (en) * | 2015-11-02 | 2022-03-30 | ワトロー エレクトリック マニュファクチャリング カンパニー | Electrostatic chuck for clamping in high temperature semiconductor processing and method of making the same |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3208029B2 (en) * | 1994-11-22 | 2001-09-10 | 株式会社巴川製紙所 | Electrostatic chuck device and manufacturing method thereof |
| JPH09260474A (en) * | 1996-03-22 | 1997-10-03 | Sony Corp | Electrostatic chuck and wafer stage |
| US6114216A (en) * | 1996-11-13 | 2000-09-05 | Applied Materials, Inc. | Methods for shallow trench isolation |
| US6184158B1 (en) * | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
| US6029197A (en) * | 1997-02-14 | 2000-02-22 | Advanced Micro Devices, Inc. | Management information base (MIB) report interface for abbreviated MIB data |
| JPH10300085A (en) * | 1997-04-22 | 1998-11-13 | Ngk Spark Plug Co Ltd | Ceramic heater and ceramic glow plug |
| JP3820706B2 (en) * | 1997-10-30 | 2006-09-13 | 住友電気工業株式会社 | Aluminum nitride heater |
| US5901030A (en) * | 1997-12-02 | 1999-05-04 | Dorsey Gage, Inc. | Electrostatic chuck employing thermoelectric cooling |
| JPH11168134A (en) * | 1997-12-03 | 1999-06-22 | Shin Etsu Chem Co Ltd | Electrostatic attracting device and manufacture thereof |
| JPH11260534A (en) * | 1998-01-09 | 1999-09-24 | Ngk Insulators Ltd | Heating apparatus and manufacture thereof |
| US6641939B1 (en) | 1998-07-01 | 2003-11-04 | The Morgan Crucible Company Plc | Transition metal oxide doped alumina and methods of making and using |
| US5886866A (en) * | 1998-07-06 | 1999-03-23 | Applied Materials, Inc. | Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing |
| DE19919902A1 (en) * | 1999-04-30 | 2000-11-02 | Aixtron Ag | Process for producing a wafer carrier which is used in particular in a high-temperature CVD reactor or in a high-temperature CVD process using aggressive gases |
| US6376807B1 (en) | 1999-07-09 | 2002-04-23 | Applied Materials, Inc. | Enhanced cooling IMP coil support |
| WO2001031978A1 (en) * | 1999-10-22 | 2001-05-03 | Ibiden Co., Ltd. | Ceramic heater |
| US6410172B1 (en) * | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
| US6377437B1 (en) | 1999-12-22 | 2002-04-23 | Lam Research Corporation | High temperature electrostatic chuck |
| JP2002057207A (en) | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor-manufacturing apparatus, manufacturing method of the same and the semiconductor-manufacturing apparatus |
| JP2001203257A (en) * | 2000-01-20 | 2001-07-27 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing apparatus |
| JP5165817B2 (en) * | 2000-03-31 | 2013-03-21 | ラム リサーチ コーポレーション | Electrostatic chuck and manufacturing method thereof |
| US20030107865A1 (en) * | 2000-12-11 | 2003-06-12 | Shinsuke Masuda | Wafer handling apparatus and method of manufacturing the same |
| KR20020046214A (en) * | 2000-12-11 | 2002-06-20 | 어드밴스드 세라믹스 인터내셔날 코포레이션 | Electrostatic chuck and method of manufacturing the same |
| EP1217655A1 (en) * | 2000-12-23 | 2002-06-26 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung | Method of handling a thin wafer |
| US6754062B2 (en) | 2002-02-27 | 2004-06-22 | Praxair S.T. Technology, Inc. | Hybrid ceramic electrostatic clamp |
| JP4082985B2 (en) * | 2002-11-01 | 2008-04-30 | 信越化学工業株式会社 | Heating device having electrostatic adsorption function and method of manufacturing the same |
| US20040156985A1 (en) * | 2002-12-18 | 2004-08-12 | Frank-Dieter Zimmermann | Process for the application of powder coatings |
| JP2006524077A (en) * | 2003-04-01 | 2006-10-26 | カウンシル フォー ザ セントラル ラボラトリー オブ ザ リサーチ カウンシルズ | Large area detector and display |
| WO2005006734A1 (en) * | 2003-07-09 | 2005-01-20 | Council For The Central Laboratory Of The Research Councils | Image machine using a large area electron multiplier |
| US20080314320A1 (en) * | 2005-02-04 | 2008-12-25 | Component Re-Engineering Company, Inc. | Chamber Mount for High Temperature Application of AIN Heaters |
| US20090242544A1 (en) * | 2005-10-12 | 2009-10-01 | Shin-Etsu Chemical Co., Ltd. | Wafer heating apparatus having electrostatic attraction function |
| US7446284B2 (en) * | 2005-12-21 | 2008-11-04 | Momentive Performance Materials Inc. | Etch resistant wafer processing apparatus and method for producing the same |
| US20070169703A1 (en) * | 2006-01-23 | 2007-07-26 | Brent Elliot | Advanced ceramic heater for substrate processing |
| WO2007132757A1 (en) * | 2006-05-15 | 2007-11-22 | Ulvac, Inc. | Cleaning method and vacuum processing apparatus |
| US7929269B2 (en) * | 2008-09-04 | 2011-04-19 | Momentive Performance Materials Inc. | Wafer processing apparatus having a tunable electrical resistivity |
| US20100177454A1 (en) * | 2009-01-09 | 2010-07-15 | Component Re-Engineering Company, Inc. | Electrostatic chuck with dielectric inserts |
| KR101691044B1 (en) * | 2009-02-04 | 2016-12-29 | 맷슨 테크놀로지, 인크. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
| US8941968B2 (en) | 2010-06-08 | 2015-01-27 | Axcelis Technologies, Inc. | Heated electrostatic chuck including mechanical clamp capability at high temperature |
| EP2490073B1 (en) | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
| NL2008630A (en) | 2011-04-27 | 2012-10-30 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
| EP3683627A1 (en) | 2012-02-03 | 2020-07-22 | ASML Netherlands B.V. | Substrate holder and lithographic apparatus |
| CN108527443B (en) * | 2018-03-26 | 2020-03-17 | 西安交通大学 | Flexible variable stiffness mechanism based on electrostatic adsorption and blocking principle and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297268A (en) * | 1993-12-27 | 1995-11-10 | Shin Etsu Chem Co Ltd | Ceramic heater with electrostatic chuck |
-
1995
- 1995-02-20 JP JP3048395A patent/JPH08227933A/en active Pending
-
1996
- 1996-02-20 US US08/603,155 patent/US5663865A/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998047176A1 (en) * | 1997-04-11 | 1998-10-22 | The Morgan Crucible Company Plc | Composite ceramic dielectrics |
| JP2002043033A (en) * | 2000-07-19 | 2002-02-08 | Nhk Spring Co Ltd | Heater unit, and method of manufacturing the same |
| JP4545896B2 (en) * | 2000-07-19 | 2010-09-15 | 日本発條株式会社 | Heater unit and manufacturing method thereof |
| EP2071610A2 (en) | 2007-10-26 | 2009-06-17 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant multilayer ceramic member |
| US8829397B2 (en) | 2007-10-26 | 2014-09-09 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant multilayer ceramic member |
| JP2022050408A (en) * | 2015-11-02 | 2022-03-30 | ワトロー エレクトリック マニュファクチャリング カンパニー | Electrostatic chuck for clamping in high temperature semiconductor processing and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US5663865A (en) | 1997-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08227933A (en) | Wafer heater with electrostatic attracting function | |
| JPH07307377A (en) | Ceramic heater with electrostatic chuck | |
| JP4744855B2 (en) | Electrostatic chuck | |
| JP3699349B2 (en) | Wafer adsorption heating device | |
| JP4811608B2 (en) | Wafer heating apparatus having electrostatic adsorption function | |
| KR101188185B1 (en) | A heating apparatus having electrostatic adsorption function | |
| KR20020068542A (en) | Articles coated with aluminum nitride by chemical vapor deposition | |
| JPH07297268A (en) | Ceramic heater with electrostatic chuck | |
| KR100992498B1 (en) | Heating apparatus having electrostatic attracting function and method of manufacturing the same | |
| JPH0750736B2 (en) | Wafer heating apparatus and manufacturing method thereof | |
| JP2008159900A (en) | Ceramic heater with electrostatic chuck | |
| JP3481717B2 (en) | Wafer heating device with electrostatic suction function | |
| KR20070113959A (en) | Electrostatic adsorption apparatus | |
| JP2756944B2 (en) | Ceramic electrostatic chuck | |
| JP3662909B2 (en) | Wafer adsorption heating device and wafer adsorption device | |
| JP3914377B2 (en) | Wafer heating device having electrostatic adsorption function | |
| JP3180998B2 (en) | Electrostatic chuck | |
| JP3835491B2 (en) | Wafer heating apparatus having electrostatic adsorption function | |
| JP3152857B2 (en) | Electrostatic chuck | |
| JPH07297267A (en) | Ceramic heater with electrostatic chuck | |
| JP3812600B2 (en) | Wafer heating apparatus having electrostatic adsorption function | |
| JP4021254B2 (en) | Heating device having electrostatic adsorption function and method of manufacturing the same | |
| JPH09232409A (en) | Wafer holding apparatus | |
| JPH0897272A (en) | Wafer support member | |
| JP2000012665A (en) | Ceramics component |