TWM539623U - Probe card - Google Patents
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- TWM539623U TWM539623U TW105217790U TW105217790U TWM539623U TW M539623 U TWM539623 U TW M539623U TW 105217790 U TW105217790 U TW 105217790U TW 105217790 U TW105217790 U TW 105217790U TW M539623 U TWM539623 U TW M539623U
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Abstract
Description
本創作是關於一種探針卡，尤其是指一種高頻懸臂式探針卡。 This creation relates to a probe card, and more particularly to a high frequency cantilever probe card.
用以檢測電子產品之各電子元件間的電性連接是否確實的方法，一般做法是以探針卡作為測試機台與待測電子元件之間的測試訊號與電源訊號之傳輸介面。 The method for detecting the electrical connection between the electronic components of the electronic product is generally a probe card as a transmission interface between the test signal and the power signal between the test machine and the electronic component to be tested.
為要提升電性效能，探針卡上的高頻探針需要達到抗訊號衰退的效果，亦即訊號阻抗匹配效果。請參照第1圖，其為繪示日本第JP2001-272416A號專利所揭露之探針卡10的示意圖。如第1圖所示，此前案探針卡10上的高頻探針16為一種同軸套管探針，係採用銅套管22作為同軸結構的外部接地導體套設於絕緣層32(圖未示)及探針30(圖未示)外，以使高頻探針16達到訊號阻抗匹配效果。然而，一般探針卡上分佈有走一般訊號的一般探針與走高頻訊號的高頻探針，倘若使用第1圖的高頻探針16的話，由於銅套管22太粗，因此若需要將銅套管22拉近靠近針尖處24，則銅套管22會影響旁邊非走高頻之一般探針，使得探針卡的整體效能也受到影響。 In order to improve the electrical performance, the high-frequency probe on the probe card needs to achieve the anti-signal degradation effect, that is, the signal impedance matching effect. Please refer to FIG. 1 , which is a schematic diagram showing the probe card 10 disclosed in Japanese Patent No. JP2001-272416A. As shown in FIG. 1 , the high frequency probe 16 on the previous probe card 10 is a coaxial sleeve probe, and the copper sleeve 22 is used as an external ground conductor of the coaxial structure on the insulating layer 32 (not shown). In addition to the probe 30 and the probe 30 (not shown), the high frequency probe 16 achieves a signal impedance matching effect. However, a general probe with a general signal and a high frequency probe for a high frequency signal are distributed on the probe card. If the high frequency probe 16 of FIG. 1 is used, since the copper sleeve 22 is too thick, The copper sleeve 22 needs to be pulled closer to the tip 24, and the copper sleeve 22 will affect the general probe that is not high-frequency, so that the overall performance of the probe card is also affected.
本創作之一技術態樣在於提供一種探針卡，其能針對直徑範圍實質上為50微米至170微米之間的針體，使探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 One of the technical aspects of the present invention is to provide a probe card capable of increasing the structural stability of the probe structure for a needle having a diameter ranging substantially from 50 micrometers to 170 micrometers, and the signal impedance matching effect is also improved. Improved to help improve the electrical performance of the probe structure.
根據本創作的一實施方式，一種探針卡包含探針結構。探針結構包含針體、絕緣套管與金屬膜套管。針體之直徑範圍實質上為50微米至170微米之間，並具有相對之第一端與第二端。絕緣套管套設於針體外，第一端與第二端均暴露於絕緣套管之外。金屬膜套管套設於絕緣套管外。 According to an embodiment of the present creation, a probe card includes a probe structure. The probe structure comprises a needle body, an insulating sleeve and a metal film sleeve. The needle has a diameter ranging substantially between 50 microns and 170 microns and has opposite first and second ends. The insulating sleeve is sleeved outside the needle body, and the first end and the second end are both exposed outside the insulating sleeve. The metal film sleeve is sleeved outside the insulating sleeve.
本創作之一技術態樣在於提供一種探針卡，其能針對直徑範圍實質上為170微米至300微米之間的針體，使探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 One of the technical aspects of the present invention is to provide a probe card capable of increasing the structural stability of the probe structure for a needle having a diameter ranging substantially from 170 micrometers to 300 micrometers, and the signal impedance matching effect is also improved. Improved to help improve the electrical performance of the probe structure.
根據本創作的一實施方式，一種探針卡包含探針結構。探針結構包含針體、第一絕緣套管、第二絕緣套管與金屬膜套管。針體之直徑範圍實質上為170微米至300微米之間，並具有相對之第一端與第二端。第一絕緣套管套設於針體外，第一端與第二端均暴露於第一絕緣套管之外。第二絕緣套管套設於第一絕緣套管外。金屬膜套管套設於第二絕緣套管外。 According to an embodiment of the present creation, a probe card includes a probe structure. The probe structure comprises a needle body, a first insulating sleeve, a second insulating sleeve and a metal film sleeve. The needle body has a diameter ranging substantially from 170 micrometers to 300 micrometers and has opposite first and second ends. The first insulating sleeve is sleeved outside the needle body, and the first end and the second end are both exposed outside the first insulating sleeve. The second insulating sleeve is sleeved outside the first insulating sleeve. The metal film sleeve is sleeved outside the second insulating sleeve.
本創作上述實施方式與已知先前技術相較，至少具有以下優點： The above-described embodiments of the present invention have at least the following advantages over the known prior art:
(1)針對直徑範圍實質上為50微米至170微米 之間的針體而言，由於絕緣套管套設於針體外，而金屬膜套管套設於絕緣套管外，因此，金屬膜套管與針體之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 (1) for a diameter range of substantially 50 microns to 170 microns In the case of the needle body, since the insulating sleeve is sleeved outside the needle body, and the metal film sleeve is sleeved outside the insulating sleeve, the signal impedance is not caused by the excessive distance between the metal membrane sleeve and the needle body. The matching problem is alleviated, the structural stability of the probe structure is increased, and the signal impedance matching effect is improved, which helps to improve the electrical performance of the probe structure.
(2)針對直徑範圍實質上為170微米至300微米之間的針體而言，由於有第一絕緣套管與第二絕緣套管位於針體與金屬膜套管之間，因此，金屬膜套管與針體之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 (2) For a needle having a diameter ranging substantially from 170 micrometers to 300 micrometers, since the first insulating sleeve and the second insulating sleeve are located between the needle body and the metal film sleeve, the metal film The problem of signal impedance mismatch caused by the excessive distance between the bushing and the needle body is reduced, the structural stability of the probe structure is increased, and the signal impedance matching effect is improved, which helps to improve the electrical properties of the probe structure. efficacy.
10‧‧‧探針卡 10‧‧‧ probe card
16‧‧‧高頻探針 16‧‧‧High frequency probe
22‧‧‧銅套管 22‧‧‧ copper casing
24‧‧‧針尖處 24‧‧‧Needle
30‧‧‧探針 30‧‧‧ probe
32‧‧‧絕緣層 32‧‧‧Insulation
100‧‧‧探針卡 100‧‧‧ probe card
110a‧‧‧探針結構 110a‧‧‧ probe structure
110a’‧‧‧探針結構 110a’‧‧‧ probe structure
110b‧‧‧探針結構 110b‧‧‧ probe structure
110b’‧‧‧探針結構 110b’‧‧‧ probe structure
111、111’‧‧‧針體 111, 111'‧‧‧ needle
111a‧‧‧第一端 111a‧‧‧ first end
111b‧‧‧第二端 111b‧‧‧second end
113‧‧‧絕緣套管 113‧‧‧Insulation casing
113’‧‧‧第一絕緣套管 113’‧‧‧First Insulation Sleeve
115’‧‧‧第二絕緣套管 115’‧‧‧Second insulating sleeve
117‧‧‧金屬膜套管 117‧‧‧Metal film casing
117a‧‧‧絕緣內層 117a‧‧‧Insulated inner layer
117b‧‧‧金屬膜 117b‧‧‧Metal film
120‧‧‧電路板 120‧‧‧ boards
121‧‧‧第一表面 121‧‧‧ first surface
122‧‧‧第二表面 122‧‧‧ second surface
123‧‧‧訊號接點 123‧‧‧Signal contacts
124‧‧‧接地接點 124‧‧‧ Grounding contacts
130‧‧‧固定環 130‧‧‧Fixed ring
140‧‧‧黏著物 140‧‧‧Adhesive
150‧‧‧導體 150‧‧‧Conductor
160‧‧‧接地針 160‧‧‧ Grounding pin
170‧‧‧導電件 170‧‧‧Electrical parts
170a‧‧‧開口 170a‧‧‧ openings
180‧‧‧金屬簿膜 180‧‧‧Metal film
190‧‧‧內部銲墊 190‧‧‧Internal pads
A‧‧‧線段 A‧‧ ‧ line segment
D11、D11’‧‧‧直徑 D11, D11’‧‧‧ diameter
D12、D12’‧‧‧直徑 D12, D12’‧‧‧ diameter
D21、D21’‧‧‧內徑 D21, D21'‧‧‧ inside diameter
D22、D22’‧‧‧內徑 D22, D22'‧‧‧ inside diameter
G11、G11’‧‧‧距離 G11, G11’‧‧‧ distance
G12、G12’‧‧‧距離 G12, G12’‧‧‧ distance
G21、G21’‧‧‧距離 G21, G21’‧‧‧ distance
G22、G22’‧‧‧距離 G22, G22’‧‧‧ distance
T1、T2、T3‧‧‧壁厚 T1, T2, T3‧‧‧ wall thickness
第1圖為繪示日本第JP2001-272416A號專利所揭露之探針卡10的示意圖。 Fig. 1 is a schematic view showing a probe card 10 disclosed in Japanese Patent No. JP2001-272416A.
第2圖為繪示依照本創作一實施方式之探針結構的剖面圖，其中金屬膜套管的中心、絕緣套管的中心與針體的中心彼此重疊。 2 is a cross-sectional view showing the structure of a probe according to an embodiment of the present invention, in which the center of the metal film sleeve, the center of the insulating sleeve, and the center of the needle body overlap each other.
第3圖為繪示依照本創作另一實施方式之探針結構的剖面圖，其中金屬膜套管的中心、絕緣套管的中心與針體的中心彼此偏移。 3 is a cross-sectional view showing a probe structure according to another embodiment of the present invention, in which the center of the metal film sleeve, the center of the insulating sleeve, and the center of the needle body are offset from each other.
第4圖為繪示依照本創作一實施方式之探針卡的剖面示意圖。 4 is a cross-sectional view showing a probe card according to an embodiment of the present invention.
第5圖為繪示依照本創作另一實施方式之探針卡的剖面示意圖。 FIG. 5 is a cross-sectional view showing a probe card according to another embodiment of the present invention.
第6圖為繪示依照本創作再一實施方式之探針卡的剖面示意圖。 FIG. 6 is a cross-sectional view showing a probe card according to still another embodiment of the present invention.
第7圖為繪示依照本創作又一實施方式之探針卡的剖面示意圖。 FIG. 7 is a cross-sectional view showing a probe card according to still another embodiment of the present invention.
第8圖為繪示第7圖之探針卡的局部剖面下視圖。 Figure 8 is a partial cross-sectional bottom view showing the probe card of Figure 7.
第9圖為繪示依照本創作另一實施方式之探針卡的局部剖面下視圖。 Figure 9 is a partial cross-sectional bottom view showing a probe card in accordance with another embodiment of the present invention.
第10圖為繪示沿第9圖之線段A的剖面圖。 Figure 10 is a cross-sectional view taken along line A of Figure 9.
第11圖為繪示依照本創作另一實施方式之探針結構的剖面圖，其中金屬膜套管的中心、第二絕緣套管的中心、第一絕緣套管的中心與針體的中心彼此重疊。 11 is a cross-sectional view showing a probe structure according to another embodiment of the present invention, wherein a center of the metal film sleeve, a center of the second insulating sleeve, a center of the first insulating sleeve, and a center of the needle body are mutually overlapping.
第12圖為繪示依照本創作另一實施方式之探針結構的剖面圖，其中金屬膜套管的中心、第二絕緣套管的中心、第一絕緣套管的中心與針體的中心彼此偏移。 Figure 12 is a cross-sectional view showing a probe structure according to another embodiment of the present invention, wherein the center of the metal film sleeve, the center of the second insulating sleeve, the center of the first insulating sleeve, and the center of the needle body are mutually Offset.
以下將以圖式揭露本創作之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本創作。也就是說，在本創作部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之；以及在此說明，在以下將要介紹之實施方式以及圖式中，相同之參考號 碼，表示相同或類似之元件或其結構特徵。 In the following, a plurality of embodiments of the present invention will be disclosed in the drawings. For the sake of clarity, a number of practical details will be described in the following description. However, it should be understood that these practical details are not applied to limit the creation. That is to say, in the implementation part of this creation, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner for the purpose of simplifying the drawings; and, in the embodiments and drawings, Reference No A code indicating the same or similar elements or structural features thereof.
除非另有定義，本文所使用的所有詞彙(包括技術和科學術語)具有其通常的意涵，其意涵係能夠被熟悉此領域者所理解。更進一步的說，上述之詞彙在普遍常用之字典中之定義，在本說明書的內容中應被解讀為與本創作相關領域一致的意涵。除非有特別明確定義，這些詞彙將不被解釋為理想化的或過於正式的意涵。 Unless otherwise defined, all terms (including technical and scientific terms) used herein are intended to mean the meaning Furthermore, the definition of the above vocabulary in the commonly used dictionary should be interpreted as the meaning consistent with the field of the present creation in the content of this specification. Unless specifically defined, these terms are not to be interpreted as idealized or overly formal.
請參照第2圖，其繪示依照本創作一實施方式之探針結構110a的剖面圖，其中金屬膜套管117的中心、絕緣套管113的中心與針體111的中心彼此重疊。需說明的是，本創作指的是一種懸臂式探針卡(cantilever probe card；CPC)，更詳而言之，是指一種高頻懸臂式探針卡。如第2圖所示，探針結構110a包含針體111、絕緣套管113與金屬膜套管117。需說明的是，本創作之金屬膜套管117並非如先前技術中使用的銅套管22。針體111之直徑D11範圍實質上為50微米至170微米之間，並且針體111具有相對之第一端111a與第二端111b(第2圖未示第一端111a與第二端111b，請參照第4~9圖)。絕緣套管113套設於針體111外，第一端111a與第二端111b均暴露於絕緣套管113之外。金屬膜套管117套設於絕緣套管113外。絕緣套管113具有壁厚T1，金屬膜套管117為於絕緣內層117a的外表面鍍上金屬膜117b的結構，絕緣內層117a具有壁厚T3。 Referring to FIG. 2, a cross-sectional view of the probe structure 110a according to an embodiment of the present invention is illustrated, in which the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 overlap each other. It should be noted that the present invention refers to a cantilever probe card (CPC), and more specifically, a high frequency cantilever probe card. As shown in FIG. 2, the probe structure 110a includes a needle body 111, an insulating sleeve 113, and a metal film sleeve 117. It should be noted that the metal film sleeve 117 of the present invention is not a copper sleeve 22 as used in the prior art. The diameter D11 of the needle body 111 is substantially between 50 micrometers and 170 micrometers, and the needle body 111 has a first end 111a and a second end 111b opposite thereto (the first end 111a and the second end 111b are not shown in FIG. 2, Please refer to pictures 4~9). The insulating sleeve 113 is sleeved outside the needle body 111, and the first end 111a and the second end 111b are both exposed outside the insulating sleeve 113. The metal film sleeve 117 is sleeved outside the insulating sleeve 113. The insulating sleeve 113 has a wall thickness T1, and the metal film sleeve 117 has a structure in which a metal film 117b is plated on the outer surface of the insulating inner layer 117a, and the insulating inner layer 117a has a wall thickness T3.
換句話說，針對直徑範圍實質上為50微米至170微米之間的針體111而言，由於絕緣套管113套設於針 體111外，而金屬膜套管117套設於絕緣套管113外，亦即絕緣套管113位於針體111與金屬膜套管117之間，並且絕緣套管113與針體111之間，存在著適當之距離以供空氣所容置，而絕緣套管113與金屬膜套管117之間亦同樣地存在著適當地距離以供空氣所容置，因此，金屬膜套管117與針體111之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構110a的架構穩定度得以增加，而訊號阻抗匹配效果(亦即抗訊號衰退效果)亦得以改善，有助提升探針結構110a的電性效能。 In other words, for the needle body 111 having a diameter ranging substantially from 50 micrometers to 170 micrometers, since the insulating sleeve 113 is sleeved on the needle Outside the body 111, the metal film sleeve 117 is sleeved outside the insulating sleeve 113, that is, the insulating sleeve 113 is located between the needle body 111 and the metal film sleeve 117, and between the insulating sleeve 113 and the needle body 111, There is a suitable distance for the air to be accommodated, and the insulating sleeve 113 and the metal film sleeve 117 are also disposed at the same distance for the air to be accommodated. Therefore, the metal film sleeve 117 and the needle body The problem of signal impedance mismatch caused by the excessive distance between 111 is reduced, the structural stability of the probe structure 110a is increased, and the signal impedance matching effect (that is, the anti-signal decay effect) is improved, which helps to improve the exploration. The electrical performance of the needle structure 110a.
具體而言，為了有效避免金屬膜套管117與針體111之間的距離過大而造成訊號阻抗不匹配的問題，針體111與金屬膜套管117之間的距離以及絕緣套管113的壁厚T1必須符合特定的限制條件。舉例來說，當金屬膜套管117的中心、絕緣套管113的中心與針體111的中心相互重疊時，前述限制條件金屬膜套管117與絕緣套管113之間的距離G11，加上絕緣套管113與針體111之間的距離G21，小於或等於絕緣套管113的壁厚T1之兩倍。也就是說，距離G11、G21與壁厚T1的關係為：G11+G21≦2T1 Specifically, in order to effectively avoid the problem of signal impedance mismatch caused by the excessive distance between the metal film sleeve 117 and the needle 111, the distance between the needle 111 and the metal film sleeve 117 and the wall of the insulating sleeve 113 Thick T1 must meet certain restrictions. For example, when the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 overlap each other, the distance G11 between the aforementioned restrictive metal film sleeve 117 and the insulating sleeve 113 is added. The distance G21 between the insulating sleeve 113 and the needle body 111 is less than or equal to twice the wall thickness T1 of the insulating sleeve 113. That is to say, the relationship between the distance G11, G21 and the wall thickness T1 is: G11+G21≦2T1
再者，金屬膜套管117之內徑D21與針體111之直徑D11具有直徑差DXa(第2圖未示直徑差DXa，直徑差DXa實質上為內徑D21減去直徑D11的數值)，當金屬膜套管117的中心、絕緣套管113的中心與針體111的中心相互重疊時，直徑差DXa等於距離G11、G21與壁厚T1總和的兩 倍，也就是說，直徑差DXa、距離G11、G21與壁厚T1的關係為：DXa=2(G11+G21+T1) Further, the inner diameter D21 of the metal film sleeve 117 and the diameter D11 of the needle body 111 have a diameter difference DXa (the diameter difference DXa is not shown in Fig. 2, and the diameter difference DXa is substantially the value of the inner diameter D21 minus the diameter D11). When the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 overlap each other, the diameter difference DXa is equal to the sum of the distances G11, G21 and the wall thickness T1. Times, that is, the relationship between the diameter difference DXa, the distance G11, G21 and the wall thickness T1 is: DXa=2 (G11+G21+T1)
如此一來，可以進一步得出以下關係：DXa=2(G11+G21+T1)≦2(2T1+T1) In this way, the following relationship can be further derived: DXa=2(G11+G21+T1)≦2(2T1+T1)
也就是說，針對直徑範圍實質上為50微米至170微米之間的針體111而言，直徑差DXa小於或等於絕緣套管113之壁厚T1之六倍，如下：DXa≦6T1 That is, for the needle 111 having a diameter ranging substantially from 50 micrometers to 170 micrometers, the diameter difference DXa is less than or equal to six times the wall thickness T1 of the insulating sleeve 113, as follows: DXa≦6T1
在一些實施方式中，絕緣套管113之壁厚T1，係大於或等於距離G11與距離G21的總和。 In some embodiments, the wall thickness T1 of the insulating sleeve 113 is greater than or equal to the sum of the distance G11 and the distance G21.
請參照第3圖，其繪示依照本創作另一實施方式之探針結構110a’的剖面圖，其中金屬膜套管117的中心、絕緣套管113的中心與針體111的中心彼此偏移。需說明的是，此偏移情況較容易或可能發生於如第2圖中的探針結構110a的中間段，因探針結構110a的中間段較無支撐；或是針體111在安裝擺放的過程中不可避免地會有彎曲情形者。如第3圖所示，例如相對於金屬膜套管117，絕緣套管113的中心與針體111的中心均朝第3圖的左方偏移，並且金屬膜套管117、絕緣套管113與針體111產生接觸。當然地，一些時候，金屬膜套管117、絕緣套管113與針體111三者之間皆仍是會有一些距離，此處提及之前述三者之間的距離，並非是指如第2圖般的金屬膜套管117的中心、絕緣套管113的中心與針體111的中心可以相互重疊之距離，僅是指金屬 膜套管117、絕緣套管113與針體111三者之間並未接觸到的意思，只是這些距離並不會實質影響到預先為了阻抗匹配而預設之距離的結果。也就是說，不論是三者之間產生接觸或是三者之間皆仍是有些距離，皆是可以得到預期阻抗匹配的效果。 Referring to FIG. 3, a cross-sectional view of the probe structure 110a' according to another embodiment of the present invention is illustrated, in which the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 are offset from each other. . It should be noted that this offset situation is easier or may occur in the middle section of the probe structure 110a as in FIG. 2, because the middle section of the probe structure 110a is less supported; or the needle body 111 is placed in the installation. There will inevitably be a bending situation in the process. As shown in FIG. 3, for example, with respect to the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle 111 are both shifted to the left in FIG. 3, and the metal film sleeve 117 and the insulating sleeve 113 are provided. Contact with the needle 111 is made. Of course, there are some distances between the metal film sleeve 117, the insulating sleeve 113 and the needle body 111. The distance between the three mentioned above does not mean that 2 The center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle 111 may overlap each other, and only refer to the metal. The membrane sleeve 117, the insulating sleeve 113 and the needle body 111 are not in contact with each other, except that these distances do not substantially affect the result of the preset distance for impedance matching in advance. That is to say, whether it is the contact between the three or the distance between the three, the effect of the expected impedance matching can be obtained.
請繼續參照第3圖，由於絕緣套管113與金屬膜套管117及針體111產生接觸，使得絕緣套管113之右側與金屬膜套管117之間具有距離G11’，而針體111之右側與絕緣套管113之間具有距離G21’。在實務的應用中，距離G11’實質上可以是小於或等於距離G11之兩倍；而距離G21’則實質上可以是小於或等於距離G21之兩倍。如上所述，為了避免訊號阻抗不匹配的問題，限制條件為距離G11’、G21’的總和小於或等於絕緣套管113的壁厚T1之兩倍。因此，在本實施方式的偏移情況下，金屬膜套管117之內徑D21’與針體111之直徑D11’之間的直徑差DXa’(亦即實質上為內徑D21’減去直徑D11’的數值)，係相等於距離G11’、G21’與兩倍壁厚T1的總和，亦即：DXa’=G11’+G21’+2T1 Referring to FIG. 3, since the insulating sleeve 113 is in contact with the metal film sleeve 117 and the needle body 111, the right side of the insulating sleeve 113 and the metal film sleeve 117 have a distance G11', and the needle body 111 There is a distance G21' between the right side and the insulating sleeve 113. In practical applications, the distance G11' may be substantially less than or equal to twice the distance G11; and the distance G21' may be substantially less than or equal to twice the distance G21. As described above, in order to avoid the problem of signal impedance mismatch, the constraint is that the sum of the distances G11', G21' is less than or equal to twice the wall thickness T1 of the insulating sleeve 113. Therefore, in the case of the offset of the present embodiment, the diameter difference DXa' between the inner diameter D21' of the metal film sleeve 117 and the diameter D11' of the needle 111 (that is, substantially the inner diameter D21' minus the diameter The value of D11' is equal to the sum of distances G11', G21' and twice the wall thickness T1, ie: DXa'=G11'+G21'+2T1
如此一來，可以進一步得出以下關係：DXa’=G11’+G21’+2T1≦2T1+2T1 In this way, the following relationship can be further derived: DXa'=G11'+G21'+2T1≦2T1+2T1
也就是說，針對直徑範圍實質上為50微米至170微米之間的針體111而言，當金屬膜套管117的中心、絕緣套管113的中心與針體111的中心彼此偏移時，直徑差DXa’更進一步小於或等於絕緣套管113之壁厚T1之四倍， 如下：DXa’≦4T1 That is, for the needle body 111 having a diameter ranging substantially from 50 μm to 170 μm, when the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 are offset from each other, The diameter difference DXa' is further less than or equal to four times the wall thickness T1 of the insulating sleeve 113, As follows: DXa’≦4T1
也就是說，針對直徑範圍實質上為50微米至170微米之間的針體111而言，只要直徑差DXa’小於或等於絕緣套管113之壁厚T1之四倍，即使金屬膜套管117的中心、絕緣套管113的中心與針體111的中心彼此偏移，前述限制條件之金屬膜套管117與絕緣套管113之間的距離G11’，加上絕緣套管113與針體111之間的距離G21’，小於或等於絕緣套管113的壁厚T1之兩倍的關係亦能得以滿足。 That is, for the needle body 111 having a diameter ranging substantially from 50 μm to 170 μm, as long as the diameter difference DXa' is less than or equal to four times the wall thickness T1 of the insulating sleeve 113, even the metal film sleeve 117 The center of the insulating sleeve 113 and the center of the needle body 111 are offset from each other, and the distance G11' between the metal foil sleeve 117 and the insulating sleeve 113 of the above-mentioned restriction, plus the insulating sleeve 113 and the needle body 111 The relationship between the distance G21' which is less than or equal to twice the wall thickness T1 of the insulating sleeve 113 can also be satisfied.
在一些實施方式中，距離G11’與距離G21’係分別大於或等於絕緣套管113之壁厚T1。 In some embodiments, the distance G11' and the distance G21' are respectively greater than or equal to the wall thickness T1 of the insulating sleeve 113.
在實務的應用中，針對直徑範圍實質上為50微米至170微米之間的針體111而言，絕緣套管113的壁厚T1可至少大於0.02公釐。具體而言，如上所述，金屬膜套管117為於絕緣內層117a的外表面鍍上金屬膜117b的結構，絕緣內層117a可以視為絕緣套管，絕緣內層117a與金屬膜117b之間没有間隙可供空氣容置，而絕緣內層117a的壁厚T3可至少大於0.02公釐。因此，在本實施方式中，當絕緣套管113與金屬膜套管117及針體111產生接觸時，金屬膜117b與針體111的最短距離，至少大於0.04公釐。 In practical applications, the wall thickness T1 of the insulating sleeve 113 may be at least greater than 0.02 mm for a needle 111 having a diameter ranging from substantially 50 micrometers to 170 micrometers. Specifically, as described above, the metal film sleeve 117 is a structure in which the outer surface of the insulating inner layer 117a is plated with the metal film 117b, and the insulating inner layer 117a can be regarded as an insulating sleeve, and the insulating inner layer 117a and the metal film 117b are There is no gap for air accommodation, and the insulating inner layer 117a may have a wall thickness T3 of at least 0.02 mm. Therefore, in the present embodiment, when the insulating sleeve 113 comes into contact with the metal film sleeve 117 and the needle 111, the shortest distance between the metal film 117b and the needle 111 is at least greater than 0.04 mm.
請參照第4圖，其繪示依照本創作一實施方式之探針卡100的剖面示意圖。如第4圖所示，探針卡100更包含電路板120、固定環130與黏著物140。電路板120具有相對之第一表面121以及第二表面122。固定環130設置於第一 表面121，針體111的第一端111a電性連接第一表面121，且探針結構110a係固定於固定環130上，並使針體111的第二端111b露出，用以接觸測試物(device under test；DUT)(圖未示)。黏著物140設置於固定環130，固定環130位於黏著物140與電路板120之間。需說明的是，在其他實施方式中第4~7圖中所示之探針結構110a，由於因在中間段處較無支撐或是由於針體111在安裝擺放的過程中不可避免地會有彎曲之情形者，則亦可以是如第3圖中所示之探針結構110a’，不應用以限制本創作。 Please refer to FIG. 4, which is a cross-sectional view of the probe card 100 according to an embodiment of the present invention. As shown in FIG. 4, the probe card 100 further includes a circuit board 120, a fixing ring 130, and an adhesive 140. The circuit board 120 has a first surface 121 opposite to the second surface 122. The fixing ring 130 is disposed at the first The first end 111a of the needle body 111 is electrically connected to the first surface 121, and the probe structure 110a is fixed on the fixing ring 130, and the second end 111b of the needle body 111 is exposed for contacting the test object ( Device under test; DUT) (not shown). The adhesive 140 is disposed on the fixing ring 130 , and the fixing ring 130 is located between the adhesive 140 and the circuit board 120 . It should be noted that, in other embodiments, the probe structure 110a shown in FIGS. 4-7 is inevitably due to lack of support at the middle portion or due to the needle body 111 being placed during installation. In the case of bending, it may also be the probe structure 110a' as shown in Fig. 3, which is not applied to limit the creation.
在本實施方式中，電路板120具有複數個訊號接點123與複數個接地接點124，訊號接點123與接地接點124位於第一表面121，且呈間隔排列，第二表面122面向測試機台(圖未示)，以及形成有若干之測試接點(圖未示)，係與訊號接點123及接地接點124電氣接通，用以電氣連接至測試機台，以接收測試機台提供的訊號。針體111的第一端111a連接對應之訊號接點123，而金屬膜套管117連接對應之接地接點124。 In this embodiment, the circuit board 120 has a plurality of signal contacts 123 and a plurality of ground contacts 124. The signal contacts 123 and the ground contacts 124 are located on the first surface 121 and are arranged at intervals, and the second surface 122 faces the test. The machine (not shown) and a plurality of test contacts (not shown) are electrically connected to the signal contact 123 and the ground contact 124 for electrically connecting to the test machine to receive the test machine. The signal provided by the station. The first end 111a of the needle body 111 is connected to the corresponding signal contact 123, and the metal film sleeve 117 is connected to the corresponding ground contact 124.
在實務的應用中，探針結構110a係由黏著物140固定在固定環130上，固定環130與黏著物140皆為可導電之材質，係利用固定環130作為接地之用。 In the practical application, the probe structure 110a is fixed on the fixing ring 130 by the adhesive 140. The fixing ring 130 and the adhesive 140 are electrically conductive materials, and the fixing ring 130 is used as the grounding.
因此，在本實施方式中，可以類同於先前技術中所提及之高頻探針16，亦使得訊號能有效地加以隔離以避免阻抗不匹配之情形發生，而且利用本實施方式則較不會影響走一般訊號之一般探針。重要的是，本創作之金屬膜套 管117較先前技術中所提及之銅套管22小，因此，可調整性更佳。 Therefore, in the present embodiment, it can be similar to the high frequency probe 16 mentioned in the prior art, so that the signal can be effectively isolated to avoid impedance mismatch, and the present embodiment is less Will affect the general probe of the general signal. What's important is that the metal film cover of this creation The tube 117 is smaller than the copper sleeve 22 mentioned in the prior art, and therefore, the adjustability is better.
進一步來說，在本實施方式中，針體111介於電路板120至黏著物140之間的針段更因受到金屬膜套管117的包覆，且藉由絕緣套管113所提供的隔離，使得針體111與連接至接地接點124的金屬膜117b之間維持著固定的間距，則有助於穩定針體111的傳輸效能以提升其電性傳輸能力。 Further, in the present embodiment, the needle segment of the needle body 111 between the circuit board 120 and the adhesive 140 is further covered by the metal film sleeve 117, and the isolation provided by the insulating sleeve 113 is provided. The fixed spacing between the needle body 111 and the metal film 117b connected to the ground contact 124 helps to stabilize the transmission performance of the needle body 111 to enhance its electrical transmission capability.
請參照第5圖，其為繪示依照本創作另一實施方式之探針卡100的剖面示意圖。另一方面，如第5圖所示，亦可根據實際狀況，固定環130與黏著物140皆為不導電之材質，因此，為使探針能有效接地之用，則可利用金屬簿膜180包覆於固定環130與黏著物140之部分表面上以作為接地之用。 Please refer to FIG. 5 , which is a cross-sectional view of the probe card 100 according to another embodiment of the present invention. On the other hand, as shown in FIG. 5, the fixing ring 130 and the adhesive 140 are both non-conductive materials according to actual conditions. Therefore, in order to enable the probe to be effectively grounded, the metal film 180 can be utilized. It is coated on a part of the surface of the fixing ring 130 and the adhesive 140 for grounding.
請參照第6圖，其為繪示依照本創作再一實施方式之探針卡100的剖面示意圖。再者，如第6圖所示，亦可根據實際狀況，固定環130為不導電之材質，黏著物140則為可導電之材質，則可利用金屬簿膜180包覆於固定環130與黏著物140之部分表面上以作為接地之用。 Please refer to FIG. 6 , which is a cross-sectional view of the probe card 100 according to still another embodiment of the present invention. Furthermore, as shown in FIG. 6, the fixing ring 130 may be made of a non-conductive material according to the actual situation, and the adhesive 140 is an electrically conductive material, and the metal film 180 may be coated on the fixing ring 130 and adhered. Part of the surface of the object 140 serves as a grounding source.
另外，亦可根據實際狀況，固定環130為可導電之材質，黏著物140則為不導電之材質，則亦可利用金屬簿膜180包覆於固定環130與黏著物140之部分表面上以作為接地之用。 In addition, according to the actual situation, the fixing ring 130 is made of a conductive material, and the adhesive 140 is a non-conductive material, and the metal film 180 can also be coated on a part of the surface of the fixing ring 130 and the adhesive 140. Used as a grounding.
請參照第7~8圖。第7圖為繪示依照本創作又 一實施方式之探針卡100的剖面示意圖。第8圖為繪示第7圖之探針卡100的局部剖面下視圖。如第7~8圖所示，探針卡100更包含接地針160與導電件170。接地針160為黏著物140所固定，接地針160一端電性連接至對應之接地接點124，另一端延伸穿出黏著物140。導電件170為黏著物140所包覆。此時，黏著物140為使用不導電材質的絕緣材料所製成，而金屬膜套管117一端延伸至黏著物140內部，且擺設在以銅箔為例的導電件170上，亦即金屬膜套管117的金屬膜117b一端仍維持在接觸接地接點124的狀態，金屬膜117b的另一端則是與銅箔接觸，而內部銲墊190具有將探針結構110a及接地針160固定於導電件170之效。在一些實施方式中，探針卡更包含導體150(第7圖未示導體150，請參照第8圖)，且銅箔更透過導體150電性連接至接地接點124，以形成另一種接地迴路，並進一步提高探針結構110a的訊號阻抗匹配效果。在實務的應用中，導體150為金屬線，為一種具有絕緣漆膜的漆包線結構。 Please refer to pictures 7~8. Figure 7 shows the creation according to this creation. A schematic cross-sectional view of a probe card 100 of an embodiment. Fig. 8 is a partial cross-sectional bottom view showing the probe card 100 of Fig. 7. As shown in FIGS. 7-8, the probe card 100 further includes a grounding pin 160 and a conductive member 170. The grounding pin 160 is fixed to the adhesive 140. One end of the grounding pin 160 is electrically connected to the corresponding grounding contact 124, and the other end extends through the adhesive 140. The conductive member 170 is covered by the adhesive 140. At this time, the adhesive 140 is made of an insulating material using a non-conductive material, and the metal film sleeve 117 extends to the inside of the adhesive 140 at one end, and is disposed on the conductive member 170 such as a copper foil, that is, a metal film. One end of the metal film 117b of the sleeve 117 is maintained in contact with the ground contact 124, and the other end of the metal film 117b is in contact with the copper foil, and the inner pad 190 has the probe structure 110a and the ground pin 160 fixed to the conductive The effect of piece 170. In some embodiments, the probe card further includes a conductor 150 (the conductor 150 is not shown in FIG. 7, please refer to FIG. 8), and the copper foil is electrically connected to the ground contact 124 through the conductor 150 to form another ground. The loop and further improve the signal impedance matching effect of the probe structure 110a. In practical applications, the conductor 150 is a metal wire and is an enameled wire structure having an insulating paint film.
換言之，於接地接點124之間的金屬膜117b、導電件170及接地探針160所連結者將構成接地迴路，使金屬膜117b、與針體111之間形成阻抗匹配功能，據以提高針體111的頻寬以提升其電性傳輸能力。當然地，導電件170亦可以是金屬銲墊或銀膠，銅箔只是方便金屬線(即導體150)與接地針160的擺放而已。 In other words, the metal film 117b, the conductive member 170, and the grounding probe 160 connected between the ground contacts 124 constitute a ground loop, and an impedance matching function is formed between the metal film 117b and the needle 111, thereby improving the needle. The bandwidth of the body 111 is to enhance its electrical transmission capability. Of course, the conductive member 170 can also be a metal pad or a silver paste. The copper foil is only convenient for the metal wire (ie, the conductor 150) and the ground pin 160 to be placed.
請參照第9~10圖。第9圖為繪示依照本創作另一實施方式之探針卡100的局部剖面下視圖，主要是揭露探 針卡100具有複數針層。第10圖為繪示沿第9圖之線段A的剖面圖。如第9~10圖所示，為達成上、下位探針結構110a的金屬膜117b能夠電性連接至接地接點，銅箔(即導電件170)的開口170a是對應著下位的探針結構110a(即第9~10圖中左側的探針結構110a)，而內部銲墊190則是固定及電性連接上、下位探針結構110a的金屬膜117b與接地針160。需說明的是，上述擺放方式有助於減縮上、下位探針結構110a之間的距離，使得探針卡100得應用於更精密的電子產品檢測用。 Please refer to pictures 9~10. FIG. 9 is a partial cross-sectional bottom view of the probe card 100 according to another embodiment of the present invention, mainly revealing The needle card 100 has a plurality of needle layers. Figure 10 is a cross-sectional view taken along line A of Figure 9. As shown in FIGS. 9-10, in order to achieve that the metal film 117b of the upper and lower probe structures 110a can be electrically connected to the ground contact, the opening 170a of the copper foil (ie, the conductive member 170) corresponds to the lower probe structure. 110a (ie, the probe structure 110a on the left side in FIGS. 9-10), and the inner pad 190 is a metal film 117b and a ground pin 160 that are fixedly and electrically connected to the upper and lower probe structures 110a. It should be noted that the above-mentioned placement method helps to reduce the distance between the upper and lower probe structures 110a, so that the probe card 100 can be applied to more sophisticated electronic product detection.
請參照第11圖，其繪示依照本創作另一實施方式之探針結構110b的剖面圖，其中金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此重疊。如第11圖所示，探針結構110b包含針體111’、第一絕緣套管113’、第二絕緣套管115’與金屬膜套管117。在本實施方式中，針體111’之直徑D12範圍實質上為170微米至300微米之間，並具有相對之第一端111a以及第二端111b(第11圖未示第一端111a與第二端111b，請參照第4~9圖)。第一絕緣套管113’套設於針體111’外，針體111’的第一端111a以及第二端111b均暴露於第一絕緣套管113’之外。第二絕緣套管115’套設於第一絕緣套管113’外。金屬膜套管117套設於第二絕緣套管115’外。第一絕緣套管113’具有壁厚T1，第二絕緣套管115’具有壁厚T2，金屬膜套管117為於絕緣內層117a的外表面鍍上金屬膜117b的結構，絕緣內層117a具有壁厚T3。 Referring to FIG. 11, a cross-sectional view of a probe structure 110b according to another embodiment of the present invention is shown, wherein the center of the metal film sleeve 117, the center of the second insulating sleeve 115', and the first insulating sleeve 113 The center of 'the body and the center of the needle 111' overlap each other. As shown in Fig. 11, the probe structure 110b includes a needle body 111', a first insulating sleeve 113', a second insulating sleeve 115' and a metal film sleeve 117. In the present embodiment, the diameter D12 of the needle body 111' is substantially between 170 micrometers and 300 micrometers, and has a first end 111a and a second end 111b (the first end 111a and the first end are not shown in FIG. 11) For the second end 111b, please refer to pictures 4~9). The first insulating sleeve 113' is sleeved outside the needle body 111', and the first end 111a and the second end 111b of the needle body 111' are exposed outside the first insulating sleeve 113'. The second insulating sleeve 115' is sleeved outside the first insulating sleeve 113'. The metal film sleeve 117 is sleeved outside the second insulating sleeve 115'. The first insulating sleeve 113' has a wall thickness T1, the second insulating sleeve 115' has a wall thickness T2, and the metal film sleeve 117 is a structure in which the outer surface of the insulating inner layer 117a is plated with a metal film 117b, and the insulating inner layer 117a Has a wall thickness T3.
換句話說，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，由於第一絕緣套管113’套設於針體111’外，第二絕緣套管115’套設於第一絕緣套管113’外，且金屬膜套管117套設於第二絕緣套管115’外，亦即第一絕緣套管113’與第二絕緣套管115’均位於針體111’與金屬膜套管117之間，並且第一絕緣套管113’與針體111’之間、第一絕緣套管113’與第二絕緣套管115’之間以及第二絕緣套管115’與金屬膜套管117之間，均分別存在著適當之距離以供空氣所容置，因此，金屬膜套管117與針體111’之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構110b的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構110b的電性效能。 In other words, for the needle body 111' having a diameter ranging substantially from 170 micrometers to 300 micrometers, since the first insulating sleeve 113' is sleeved outside the needle body 111', the second insulating sleeve 115' sleeve The first insulating sleeve 113' is disposed outside the first insulating sleeve 113', and the first insulating sleeve 113' and the second insulating sleeve 115' are located at the needle body. Between the 111' and the metal film sleeve 117, and between the first insulating sleeve 113' and the needle 111', between the first insulating sleeve 113' and the second insulating sleeve 115', and the second insulating sleeve Between the 115' and the metal film sleeve 117, there is a proper distance for the air to be accommodated. Therefore, the signal impedance mismatch between the metal film sleeve 117 and the needle 111' is too large. The mitigation, the structural stability of the probe structure 110b is increased, and the signal impedance matching effect is improved, which helps to improve the electrical performance of the probe structure 110b.
具體而言，當金屬膜套管117的中心、第一絕緣套管113’的中心與針體111’的中心相互重疊時，金屬膜套管117與第一絕緣套管113’之間的距離G12，加上第一絕緣套管113’與針體111’之間的距離G22，大於第一絕緣套管113’的壁厚T1之兩倍。也就是說，距離G12、G22與壁厚T1的關係為：G12+G22>2T1 Specifically, when the center of the metal film sleeve 117, the center of the first insulating sleeve 113' and the center of the needle body 111' overlap each other, the distance between the metal film sleeve 117 and the first insulating sleeve 113' G12, plus the distance G22 between the first insulating sleeve 113' and the needle 111' is greater than twice the wall thickness T1 of the first insulating sleeve 113'. That is to say, the relationship between the distance G12, G22 and the wall thickness T1 is: G12+G22>2T1
相似地，金屬膜套管117之內徑D22與針體111’之直徑D12具有直徑差DXb(第11圖未示直徑差DXb，直徑差DXb實質上為內徑D22減去直徑D12的數值)，當金屬膜套管117的中心、第一絕緣套管113’的中心與針體111’的中心相互重疊時，直徑差DXb等於距離 G12、G22與壁厚T1總和的兩倍，也就是說，直徑差DXb、距離G12、G22與壁厚T1的關係為：DXb=2(G12+G22+T1) Similarly, the inner diameter D22 of the metal film sleeve 117 and the diameter D12 of the needle body 111' have a diameter difference DXb (the diameter difference DXb is not shown in FIG. 11 and the diameter difference DXb is substantially the inner diameter D22 minus the diameter D12) When the center of the metal film sleeve 117, the center of the first insulating sleeve 113' and the center of the needle body 111' overlap each other, the diameter difference DXb is equal to the distance G12, G22 and the wall thickness T1 are twice the sum, that is, the relationship between the diameter difference DXb, the distance G12, G22 and the wall thickness T1 is: DXb=2 (G12+G22+T1)
如此一來，可以進一步得出以下關係：DXb=2(G12+G22+T1)>2(2T1+T1) In this way, the following relationship can be further derived: DXb=2(G12+G22+T1)>2(2T1+T1)
也就是說，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，直徑差DXb大於第一絕緣套管113’之壁厚T1之六倍，如下：DXb>6T1 That is, for the needle body 111' having a diameter ranging substantially from 170 μm to 300 μm, the diameter difference DXb is greater than six times the wall thickness T1 of the first insulating sleeve 113' as follows: DXb>6T1
總結而言，針對直徑範圍實質上為50微米至170微米之間的針體111而言，在金屬膜套管117的中心、絕緣套管113的中心與針體111的中心相互重疊的情況下，若直徑差DXa小於或等於絕緣套管113之壁厚T1之六倍，則探針結構110a並不包含第二絕緣套管115’。又，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，在金屬膜套管117的中心、第一絕緣套管113’的中心與針體111’的中心相互重疊的情況下，若直徑差DXb大於第一絕緣套管113’之壁厚T1之六倍，則探針結構110b包含第二絕緣套管115’，以進一步減輕金屬膜套管117與針體111’之間因距離過大而造成訊號阻抗不匹配的問題。 In summary, for the needle body 111 having a diameter ranging substantially from 50 micrometers to 170 micrometers, in the case where the center of the metal film sleeve 117, the center of the insulating sleeve 113 and the center of the needle body 111 overlap each other If the diameter difference DXa is less than or equal to six times the wall thickness T1 of the insulating sleeve 113, the probe structure 110a does not include the second insulating sleeve 115'. Further, for the needle body 111' having a diameter substantially in the range of 170 μm to 300 μm, the center of the metal film sleeve 117, the center of the first insulating sleeve 113' and the center of the needle body 111' overlap each other. In the case where the diameter difference DXb is greater than six times the wall thickness T1 of the first insulating sleeve 113', the probe structure 110b includes the second insulating sleeve 115' to further reduce the metal film sleeve 117 and the needle body 111. 'The problem of signal impedance mismatch due to excessive distance between the two.
請參照第12圖，其繪示依照本創作另一實施方式之探針結構110b’的剖面圖，其中金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此偏移。需說明的是，此偏移情況較 容易或可能發生於如第11圖中的探針結構110b的中間段(因中間段較無支撐)，或是針體111’在安裝擺放的過程中不可避免地會有彎曲情形者。舉例而言，如第12圖所示，例如相對於金屬膜套管117，第一絕緣套管113’的中心、第二絕緣套管115’的中心與針體111’的中心均朝第12圖的左方偏移，並且第一絕緣套管113’與第二絕緣套管115’及針體111’產生接觸，而第二絕緣套管115’與金屬膜套管117及第一絕緣套管113’產生接觸，當然地，如上所述，不論是第一絕緣套管113’、第二絕緣套管115’、金屬膜套管117及針體111’四者之間產生接觸或是四者之間皆仍是有些距離，皆是可以得到預期阻抗匹配的效果。 Referring to FIG. 12, a cross-sectional view of a probe structure 110b' according to another embodiment of the present invention is shown, wherein the center of the metal film sleeve 117, the center of the second insulating sleeve 115', and the first insulating sleeve The center of 113' and the center of the needle 111' are offset from each other. It should be noted that this offset is more It is easy or possible to occur in the middle section of the probe structure 110b as in Fig. 11 (since the middle section is less supported), or the needle body 111' inevitably has a bending condition during installation. For example, as shown in FIG. 12, for example, with respect to the metal film sleeve 117, the center of the first insulating sleeve 113', the center of the second insulating sleeve 115', and the center of the needle body 111' are all facing the 12th. The left side of the figure is offset, and the first insulating sleeve 113' is in contact with the second insulating sleeve 115' and the needle 111', and the second insulating sleeve 115' and the metal film sleeve 117 and the first insulating sleeve The tube 113' makes contact, of course, as described above, whether the first insulating sleeve 113', the second insulating sleeve 115', the metal film sleeve 117 and the needle 111' are in contact with each other or four There are still some distances between them, and the effect of expected impedance matching can be obtained.
請繼續參照第12圖，由於第一絕緣套管113’、第二絕緣套管115’、金屬膜套管117及針體111’產生接觸，使得第一絕緣套管113’之右側與金屬膜套管117之間具有距離G12’，而針體111’之右側與第一絕緣套管113’之間具有距離G22’。如上所述，距離G12’、G22’的總和大於第一絕緣套管113’的壁厚T1之兩倍。在此情況下，金屬膜套管117之內徑D22’與針體111’之直徑D12’之間的直徑差DXb’(亦即實質上為內徑D22’減去直徑D12’的數值)，係相等於距離G12’、G22’與壁厚T2及兩倍壁厚T1的總和，亦即：DXb’=G12’+G22’+2T1+T2 Referring to FIG. 12, since the first insulating sleeve 113', the second insulating sleeve 115', the metal film sleeve 117 and the needle 111' are in contact, the right side of the first insulating sleeve 113' and the metal film are formed. There is a distance G12' between the sleeves 117, and a distance G22' between the right side of the needle body 111' and the first insulating sleeve 113'. As described above, the sum of the distances G12', G22' is greater than twice the wall thickness T1 of the first insulating sleeve 113'. In this case, the diameter difference DXb' between the inner diameter D22' of the metal film sleeve 117 and the diameter D12' of the needle 111' (that is, substantially the inner diameter D22' minus the diameter D12'), It is equal to the sum of distances G12', G22' and wall thickness T2 and twice the wall thickness T1, namely: DXb'=G12'+G22'+2T1+T2
如此一來，可以進一步得出以下關係：DXb’=G12’+G22’+2T1+T2 >2T1+2T1+T2 In this way, the following relationship can be further derived: DXb'=G12'+G22'+2T1+T2 >2T1+2T1+T2
也就是說，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，當金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此偏移時，直徑差DXb’更進一步大於第一絕緣套管113’之壁厚T1之四倍與第二絕緣套管115’之壁厚T2之總和，如下：DXb’>4T1+T2 That is, for the needle body 111' having a diameter ranging substantially from 170 micrometers to 300 micrometers, the center of the metal film sleeve 117, the center of the second insulating sleeve 115', and the first insulating sleeve 113 When the center of the 'and the center of the needle 111' are offset from each other, the diameter difference DXb' is further greater than the sum of the wall thickness T1 of the first insulating sleeve 113' and the wall thickness T2 of the second insulating sleeve 115'. , as follows: DXb'>4T1+T2
也就是說，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，當金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此偏移時，若直徑差DXb’大於第一絕緣套管113’之壁厚T1之之四倍與第二絕緣套管115’之壁厚T2之總和，則探針結構110b’包含第二絕緣套管115’。 That is, for the needle body 111' having a diameter ranging substantially from 170 micrometers to 300 micrometers, the center of the metal film sleeve 117, the center of the second insulating sleeve 115', and the first insulating sleeve 113 When the center of the 'needle body 111' is offset from each other, if the diameter difference DXb' is greater than the sum of the wall thickness T1 of the first insulating sleeve 113' and the wall thickness T2 of the second insulating sleeve 115' The probe structure 110b' includes a second insulating sleeve 115'.
總結而言，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，當金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此重疊時，且直徑差DXb大於第一絕緣套管113’之壁厚T1之六倍，則探針結構110b包含第二絕緣套管115’；在前述限制條件下，若亦需要符合金屬膜套管117的中心、第二絕緣套管115’的中心、第一絕緣套管113’的中心與針體111’的中心彼此偏移之限制條件時，則只要第二絕緣套管115’的壁厚T2小於或等於第一絕緣套管113’的壁厚T1之兩倍，即可以同時符合直徑差DXb與直徑差DXb’ 之限制條件，則探針結構110b’仍是會包含第二絕緣套管115’。反之，倘若第二絕緣套管115’的壁厚T2大於第一絕緣套管113’的壁厚T1之兩倍時，且亦不符合直徑差DXb與直徑差DXb’之限制條件時，則探針結構110b’不會包含第二絕緣套管115’。 In summary, for the needle body 111' having a diameter ranging substantially from 170 micrometers to 300 micrometers, the center of the metal film sleeve 117, the center of the second insulating sleeve 115', and the first insulating sleeve 113 When the center of the 'hole and the needle 111' overlap each other, and the diameter difference DXb is greater than six times the wall thickness T1 of the first insulating sleeve 113', the probe structure 110b includes the second insulating sleeve 115'; Under the restriction condition, if it is necessary to meet the restriction condition that the center of the metal film sleeve 117, the center of the second insulating sleeve 115', the center of the first insulating sleeve 113' and the center of the needle body 111' are offset from each other, Then, as long as the wall thickness T2 of the second insulating sleeve 115' is less than or equal to twice the wall thickness T1 of the first insulating sleeve 113', the diameter difference DXb and the diameter difference DXb' can be simultaneously met. The limiting condition, the probe structure 110b' will still include the second insulating sleeve 115'. On the other hand, if the wall thickness T2 of the second insulating sleeve 115' is greater than twice the wall thickness T1 of the first insulating sleeve 113', and does not meet the limitation of the diameter difference DXb and the diameter difference DXb', then The needle structure 110b' does not include a second insulating sleeve 115'.
在實務的應用中，針對直徑範圍實質上為170微米至300微米之間的針體111’而言，第一絕緣套管113’的壁厚T1可至少大於0.02公釐，第二絕緣套管115’的壁厚T2亦可至少大於0.02公釐。具體而言，如上所述，金屬膜套管117為於絕緣內層117a的外表面鍍上金屬膜117b的結構，而絕緣內層117a的壁厚T3可至少大於0.04公釐。因此，在本實施方式中，當第一絕緣套管113’與第二絕緣套管115’及針體111’產生接觸，且第二絕緣套管115’與金屬膜套管117及第一絕緣套管113’產生接觸時，金屬膜117b與針體111’的最短距離，至少大於0.08公釐。 In practical applications, for a needle 111' having a diameter ranging substantially from 170 micrometers to 300 micrometers, the first insulating sleeve 113' may have a wall thickness T1 of at least greater than 0.02 mm, and the second insulating sleeve The wall thickness T2 of 115' may also be at least greater than 0.02 mm. Specifically, as described above, the metal film sleeve 117 is a structure in which the outer surface of the insulating inner layer 117a is plated with the metal film 117b, and the wall thickness T3 of the insulating inner layer 117a may be at least greater than 0.04 mm. Therefore, in the present embodiment, when the first insulating sleeve 113' is in contact with the second insulating sleeve 115' and the needle 111', and the second insulating sleeve 115' is insulative with the metal film sleeve 117 and the first insulating sleeve When the sleeve 113' is brought into contact, the shortest distance between the metal film 117b and the needle 111' is at least greater than 0.08 mm.
當然地，應了解到，上述之第4圖至第10圖中，針對直徑範圍實質上為50微米至170微米之間的針體111所揭露的實施方式，可視實際需求而運用在針對直徑範圍實質上為170微米至300微米之間的針體111’中，而且應可以達到相似之功效，亦即第4圖至第10圖中的探針結構110a，除了如上所述可為探針結構110a’外，亦可視實際需求而採用探針結構110b或探針結構110b’，或是探針結構110a與110a’亦可以同時存在之，或是探針結構110b或探針結構110b’亦可以同時存在之，容不再贅述，且不應用以限制本 創作。 Of course, it should be understood that in the above-mentioned FIG. 4 to FIG. 10, the embodiment disclosed for the needle body 111 having a diameter ranging substantially from 50 micrometers to 170 micrometers can be applied to the diameter range according to actual needs. It is substantially in the needle body 111' between 170 micrometers and 300 micrometers, and should have similar effects, that is, the probe structure 110a in FIGS. 4 to 10, except for the probe structure as described above. Outside the 110a', the probe structure 110b or the probe structure 110b' may be used according to actual needs, or the probe structures 110a and 110a' may exist at the same time, or the probe structure 110b or the probe structure 110b' may also At the same time, it will not be described again, and it is not applied to limit this. creation.
綜上所述，本創作的技術方案與現有技術相比具有明顯的優點和有益效果。通過上述技術方案，可達到相當的技術進步，並具有產業上的廣泛利用價值，其至少具有以下優點： In summary, the technical solution of the present invention has obvious advantages and beneficial effects compared with the prior art. Through the above technical solutions, considerable technological progress can be achieved, and the industrial use value is widely utilized, which has at least the following advantages:
(1)針對直徑範圍實質上為50微米至170微米之間的針體而言，由於絕緣套管套設於針體外，而金屬膜套管套設於絕緣套管外，因此，金屬膜套管與針體之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 (1) For a needle body having a diameter ranging from substantially 50 micrometers to 170 micrometers, since the insulating sleeve is sleeved outside the needle body and the metal film sleeve is sleeved outside the insulating sleeve, the metal film sleeve is The problem of signal impedance mismatch caused by excessive distance between the tube and the needle body is reduced, the structural stability of the probe structure is increased, and the signal impedance matching effect is improved, which helps to improve the electrical performance of the probe structure. .
(2)針對直徑範圍實質上為170微米至300微米之間的針體而言，由於有第一絕緣套管與第二絕緣套管位於針體與金屬膜套管之間，因此，金屬膜套管與針體之間因距離過大而造成訊號阻抗不匹配的問題得以減輕，使得探針結構的架構穩定度得以增加，而訊號阻抗匹配效果亦得以改善，有助提升探針結構的電性效能。 (2) For a needle having a diameter ranging substantially from 170 micrometers to 300 micrometers, since the first insulating sleeve and the second insulating sleeve are located between the needle body and the metal film sleeve, the metal film The problem of signal impedance mismatch caused by the excessive distance between the bushing and the needle body is reduced, the structural stability of the probe structure is increased, and the signal impedance matching effect is improved, which helps to improve the electrical properties of the probe structure. efficacy.
雖然本創作已以實施方式揭露如上，然其並非用以限定本創作，任何熟習此技藝者，在不脫離本創作之精神和範圍內，當可作各種之更動與潤飾，因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person skilled in the art can make various changes and refinements without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
110a‧‧‧探針結構 110a‧‧‧ probe structure
111‧‧‧針體 111‧‧‧ needle
113‧‧‧絕緣套管 113‧‧‧Insulation casing
117‧‧‧金屬膜套管 117‧‧‧Metal film casing
117a‧‧‧絕緣內層 117a‧‧‧Insulated inner layer
117b‧‧‧金屬膜 117b‧‧‧Metal film
D11‧‧‧直徑 D11‧‧‧ diameter
D21‧‧‧內徑 D21‧‧‧Inner diameter
G11、G21‧‧‧距離 G11, G21‧‧‧ distance
T1、T3‧‧‧壁厚 T1, T3‧‧‧ wall thickness
Claims (24)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105217790U TWM539623U (en) | 2016-11-22 | 2016-11-22 | Probe card |
| JP2017003934U JP3213422U (en) | 2016-11-22 | 2017-08-28 | Probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105217790U TWM539623U (en) | 2016-11-22 | 2016-11-22 | Probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM539623U true TWM539623U (en) | 2017-04-11 |
Family
ID=59254407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105217790U TWM539623U (en) | 2016-11-22 | 2016-11-22 | Probe card |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM539623U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI642940B (en) * | 2017-09-01 | 2018-12-01 | 中華精測科技股份有限公司 | Probe assembly and probe structure thereof |
| TWI669510B (en) * | 2018-02-06 | 2019-08-21 | 冠銓科技實業有限公司 | Probe for high frequency testing |
| TWI825798B (en) * | 2022-06-22 | 2023-12-11 | 吳俊杰 | Elastic probe and circuit test device |
-
2016
- 2016-11-22 TW TW105217790U patent/TWM539623U/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI642940B (en) * | 2017-09-01 | 2018-12-01 | 中華精測科技股份有限公司 | Probe assembly and probe structure thereof |
| TWI669510B (en) * | 2018-02-06 | 2019-08-21 | 冠銓科技實業有限公司 | Probe for high frequency testing |
| TWI825798B (en) * | 2022-06-22 | 2023-12-11 | 吳俊杰 | Elastic probe and circuit test device |
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