TWI411785B - Coaxial probe for wafer probe card and spider using the coaxial probe - Google Patents
Coaxial probe for wafer probe card and spider using the coaxial probe Download PDFInfo
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- TWI411785B TWI411785B TW99128463A TW99128463A TWI411785B TW I411785 B TWI411785 B TW I411785B TW 99128463 A TW99128463 A TW 99128463A TW 99128463 A TW99128463 A TW 99128463A TW I411785 B TWI411785 B TW I411785B
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Abstract
Description
本發明係關於一種晶圓探針卡之同軸探針以及使用該同軸探針之測試頭(spider)，尤其係關於一種可有效提供雜訊屏蔽之晶圓探針卡的同軸探針以及使用該同軸探針之測試頭。The present invention relates to a coaxial probe for a wafer probe card and a probe using the coaxial probe, and more particularly to a coaxial probe for a wafer probe card capable of effectively providing noise shielding and using the same Test head for coaxial probes.
晶圓針測技術隨著半導體製程技術一直演變，也不斷地被使用著，使得裸晶在切割之後未完成封裝前，可測試其品質，避免不良品封裝成本。近年來半導體製程技術突飛猛進，現階段電晶體通道長度(channel length)已由0.15微米演進至0.13微米到現在最新的90奈米製程，IC體積越來越小、功能越來越強、腳數越來越多。因此，使得探針卡的探針數量以及探針密度不斷增加，以應付現階段的測試需求。然而，在進行測試時，探針間的電容與電感耦合容易產生雜訊而引起測試的不穩定，甚至引起短路。因此，亟需一種可提供雜訊屏蔽的晶圓測試探針。Wafer testing technology has been continuously used along with semiconductor process technology, so that the bare crystal can be tested for quality before packaging, and the cost of defective packaging is avoided. In recent years, the semiconductor process technology has advanced by leaps and bounds. At present, the channel length of the transistor has evolved from 0.15 micrometers to 0.13 micrometers to the latest 90 nanometer process. The IC is getting smaller and smaller, the function is getting stronger, and the number of pins is increasing. The more you come. Therefore, the number of probes of the probe card and the probe density are continuously increased to cope with the current testing requirements. However, when testing, the coupling between the capacitor and the inductor is prone to noise, which causes instability of the test and even causes a short circuit. Therefore, there is a need for a wafer test probe that provides noise shielding.
鑒於上述問題，本發明之一實施樣態可提供一種晶圓探針卡之同軸探針，包含：一鎢或鎢合金探針本體，具有一第一端部以及一第二端部，其中該第一端部係相對於該探針本體而傾斜並且具有一尖端；一或多層絕緣層，沉積在該探針本體的一區域上，其中該區域不覆蓋該第一端部的該尖端以及該第二端部；以及一金屬導電層，沉積在至少一部分之該絕緣層上。In view of the above problems, an embodiment of the present invention provides a coaxial probe for a wafer probe card, comprising: a tungsten or tungsten alloy probe body having a first end and a second end, wherein the The first end portion is inclined relative to the probe body and has a tip end; one or more insulating layers are deposited on a region of the probe body, wherein the region does not cover the tip end of the first end portion and the a second end portion; and a metal conductive layer deposited on at least a portion of the insulating layer.
本發明之另一實施樣態可提供一種使用同軸探針之測試頭，其安裝在一晶圓測試用印刷電路板上，該測試頭包含：一墊片，設置在該印刷電路板上；一環部，設置在該墊片上；一同軸探針；一熱固性導電聚合物，設置在該環部上並將該同軸探針固定在該環部上；以及一接地部，分別與該熱固性導電聚合物以及該印刷電路板連接。該同軸探針包含：一鎢或鎢合金探針本體，具有一第一端部以及一第二端部，其中該第一端部係相對於該探針本體而傾斜並且具有一尖端；一或多層絕緣層，沉積在該探針本體的一區域上，其中該區域不覆蓋該第一端部的該尖端以及該第二端部；以及一金屬導電層，沉積在至少一部分之該絕緣層上。該同軸探針之該探針本體的該第二端部連接並固定至該印刷電路板。該熱固性導電聚合物包覆該同軸探針的至少一部分該金屬導電層。Another embodiment of the present invention can provide a test head using a coaxial probe mounted on a wafer test printed circuit board, the test head comprising: a spacer disposed on the printed circuit board; a portion disposed on the spacer; a coaxial probe; a thermosetting conductive polymer disposed on the ring portion and fixing the coaxial probe on the ring portion; and a ground portion respectively coupled to the thermosetting conductive polymer And the printed circuit board connection. The coaxial probe includes: a tungsten or tungsten alloy probe body having a first end and a second end, wherein the first end is inclined relative to the probe body and has a tip; a plurality of insulating layers deposited on a region of the probe body, wherein the region does not cover the tip end of the first end portion and the second end portion; and a metal conductive layer deposited on at least a portion of the insulating layer . The second end of the probe body of the coaxial probe is coupled and secured to the printed circuit board. The thermoset conductive polymer coats at least a portion of the metal conductive layer of the coaxial probe.
本發明之其他實施樣態以及優點可從以下與用以例示本發明原理範例之隨附圖式相結合的詳細說明而更顯明白。Other embodiments and advantages of the present invention will become more apparent from the detailed description of the accompanying drawings.
圖1A顯示依照本發明之一實施例之同軸探針1的概略橫剖面圖。如圖1A所示，同軸探針1包含：鎢或鎢合金探針本體3；一或多層絕緣層5，沉積在探針本體3的一區域上；以及金屬導電層7，沉積在至少一部分的一或多層絕緣層5上。探針本體3具有第一端部3a以及第二端部3b，其中第一端部3a係相對於探針本體3而傾斜並且具有一尖端31。吾人可注意到，上述沉積一或多層絕緣層5的區域並不覆蓋探針本體3的第一端部3a的尖端31以及第二端部3b。金屬導電層7可被沉積而完全或部分地覆蓋沉積在此區域上的絕緣層5，即，金屬導電層7可被沉積在至少一部分的絕緣層5上。一或多層絕緣層5例如可包含陶瓷材料，並且用以使各探針之間產生絕緣。金屬導電層7可被使用作為屏蔽層，以隔絕雜訊的干擾。吾人可例如藉由下列沉積方式而分別沉積出具有奈米等級或微米等級之厚度的絕緣層5以及金屬導電層7：化學氣相沉積(CVD，chemical vapor deposition)、物理氣相沉積(PVD，physical vapor deposition)、蒸鍍(evaporation)、濺鍍(sputtering)、或離子鍍(ion plating)。上述沉積方式乃為熟習鍍膜技藝者所熟知，故在此將不再贅述其原理與處理程序。舉例而言，在本發明之實施例中，絕緣層5的厚度可為約1 nm～約100 μm，而導電層7的厚度可為約1 nm～約100 μm。1A shows a schematic cross-sectional view of a coaxial probe 1 in accordance with an embodiment of the present invention. As shown in FIG. 1A, the coaxial probe 1 comprises: a tungsten or tungsten alloy probe body 3; one or more insulating layers 5 deposited on a region of the probe body 3; and a metal conductive layer 7 deposited on at least a portion of One or more layers of insulating layer 5. The probe body 3 has a first end 3a and a second end 3b, wherein the first end 3a is inclined with respect to the probe body 3 and has a tip 31. It may be noted that the region in which the one or more insulating layers 5 are deposited does not cover the tip end 31 and the second end portion 3b of the first end portion 3a of the probe body 3. The metal conductive layer 7 can be deposited to completely or partially cover the insulating layer 5 deposited on this region, that is, the metal conductive layer 7 can be deposited on at least a portion of the insulating layer 5. The one or more insulating layers 5 may, for example, comprise a ceramic material and serve to insulate between the probes. The metal conductive layer 7 can be used as a shielding layer to isolate noise interference. The insulating layer 5 having a thickness of nanometer or micron and the metal conductive layer 7 can be separately deposited by, for example, the following deposition methods: chemical vapor deposition (CVD), physical vapor deposition (PVD, Physical vapor deposition), evaporation, sputtering, or ion plating. The above deposition methods are well known to those skilled in the art of coating, and the principles and processing procedures thereof will not be described herein. For example, in an embodiment of the invention, the insulating layer 5 may have a thickness of about 1 nm to about 100 μm, and the conductive layer 7 may have a thickness of about 1 nm to about 100 μm.
圖1B顯示圖1A之同軸探針1的局部放大圖。如圖1B所示，圖1B係顯示圖1A之區域A的局部放大部分。吾人可由圖1B清楚觀察到，一或多層絕緣層5以及金屬導電層7皆不覆蓋鎢或鎢合金探針本體3的第二端部3b。FIG. 1B shows a partial enlarged view of the coaxial probe 1 of FIG. 1A. As shown in FIG. 1B, FIG. 1B shows a partially enlarged portion of the area A of FIG. 1A. It can be clearly seen from FIG. 1B that none or more of the insulating layer 5 and the metal conductive layer 7 do not cover the second end portion 3b of the tungsten or tungsten alloy probe body 3.
圖2顯示依照本發明之一實施例之測試頭10的立體圖。圖3顯示依照本發明之一實施例將圖2之測試頭10安裝在晶圓探針卡之晶圓測試用印刷電路板21上的概略局部橫剖面圖。如圖2與圖3所示，測試頭10包含：墊片11，設置在晶圓測試用印刷電路板21上；環部13，設置在墊片11上；圖1A之同軸探針1；熱固性導電聚合物15，設置在環部13上並將同軸探針1固定在環部13上；以及接地部17，分別與熱固性導電聚合物15以及印刷電路板21連接。同軸探針1之探針本體3的第二端部3b係藉由焊錫19而連接並固定至印刷電路板21的訊號焊點23，以將同軸探針1所量測到的訊號傳遞至印刷電路板21，並且如圖1B與圖3所示，焊錫19未與一或多層絕緣層5以及金屬導電層7接觸，而僅與探針本體3接觸。接地部17可例如為圓柱狀或片狀的導電體，並且藉由焊錫20而連接並固定至印刷電路板21的第一接地點24。熱固性導電聚合物15包覆同軸探針1的至少一部分金屬導電層7。同軸探針1的金屬導電層7與印刷電路板21的第二接地點25連接，以使雜訊可透過同軸探針1的金屬導電層7以及印刷電路板21的第二接地點25而導出。此外，藉由熱固性導電聚合物15、接地部17、以及印刷電路板21之第一接地點24的設置，俾能進一步使雜訊透過熱固性導電聚合物15、接地部17、以及印刷電路板21的第一接地點24而導出，以增強導出雜訊的能力，藉以有效降低探針在傳遞訊號時所受到的外界雜訊干擾或探針彼此之間的干擾，因而增加晶圓測試的穩定性。雖然，在圖3中，金屬導電層7以及接地部17係分別連接至印刷電路板21的第二接地點25以及第一接地點24，但在本發明之另一實施例中，金屬導電層7以及接地部17可連接至同一接地點。熱固性導電聚合物15可例如為熱固性導電膠或熱固性導電樹脂。此外，墊片11被設置在印刷電路板21上，並且可藉由印刷電路板21的補強板27來強化其固定性。2 shows a perspective view of a test head 10 in accordance with an embodiment of the present invention. 3 shows a schematic partial cross-sectional view of the test head 10 of FIG. 2 mounted on a wafer test printed circuit board 21 of a wafer probe card in accordance with an embodiment of the present invention. As shown in FIG. 2 and FIG. 3, the test head 10 includes a spacer 11 disposed on the wafer test printed circuit board 21, and a ring portion 13 disposed on the spacer 11; the coaxial probe 1 of FIG. 1A; thermosetting The conductive polymer 15 is disposed on the ring portion 13 and fixes the coaxial probe 1 to the ring portion 13; and the ground portion 17 is connected to the thermosetting conductive polymer 15 and the printed circuit board 21, respectively. The second end portion 3b of the probe body 3 of the coaxial probe 1 is connected and fixed to the signal soldering point 23 of the printed circuit board 21 by solder 19 to transmit the signal measured by the coaxial probe 1 to the printing. The circuit board 21, and as shown in FIGS. 1B and 3, the solder 19 is not in contact with the one or more insulating layers 5 and the metal conductive layer 7, but is only in contact with the probe body 3. The ground portion 17 may be, for example, a cylindrical or sheet-like electrical conductor, and is connected and fixed to the first grounding point 24 of the printed circuit board 21 by the solder 20. The thermosetting conductive polymer 15 covers at least a portion of the metal conductive layer 7 of the coaxial probe 1. The metal conductive layer 7 of the coaxial probe 1 is connected to the second ground point 25 of the printed circuit board 21 so that the noise can be transmitted through the metal conductive layer 7 of the coaxial probe 1 and the second ground point 25 of the printed circuit board 21. . In addition, by the arrangement of the thermosetting conductive polymer 15, the grounding portion 17, and the first grounding point 24 of the printed circuit board 21, the noise can be further transmitted through the thermosetting conductive polymer 15, the ground portion 17, and the printed circuit board 21. The first grounding point 24 is derived to enhance the ability to derive noise, thereby effectively reducing the external noise interference or the interference between the probes when the probe transmits the signal, thereby increasing the stability of the wafer test. . Although, in FIG. 3, the metal conductive layer 7 and the ground portion 17 are respectively connected to the second grounding point 25 of the printed circuit board 21 and the first grounding point 24, in another embodiment of the present invention, the metal conductive layer 7 and the grounding portion 17 can be connected to the same grounding point. The thermosetting conductive polymer 15 may be, for example, a thermosetting conductive paste or a thermosetting conductive resin. Further, the spacer 11 is provided on the printed circuit board 21, and its fixing property can be enhanced by the reinforcing plate 27 of the printed circuit board 21.
雖然本發明已參考較佳實施例及圖式詳加說明，但熟習本項技藝者可瞭解在不離開本發明之精神與範疇的情況下，可進行各種修改、變化以及等效替代，然而這些修改、變化以及等效替代仍落入本發明所附的申請專利範圍內。While the invention has been described herein with reference to the preferred embodiments of the embodiments of the invention Modifications, variations, and equivalents are still within the scope of the appended claims.
1．．．同軸探針1. . . Coaxial probe
3．．．探針本體3. . . Probe body
3a．．．第一端部3a. . . First end
3b．．．第二端部3b. . . Second end
5．．．絕緣層5. . . Insulation
7．．．金屬導電層7. . . Metal conductive layer
10．．．測試頭10. . . Test head
11．．．墊片11. . . Gasket
13．．．環部13. . . Ring
15．．．熱固性導電聚合物15. . . Thermosetting conductive polymer
17．．．接地部17. . . Grounding
19．．．焊錫19. . . Solder
20．．．焊錫20. . . Solder
21‧‧‧印刷電路板21‧‧‧Printed circuit board
23‧‧‧訊號焊點23‧‧‧Signal solder joints
24‧‧‧第一接地點24‧‧‧First grounding point
25‧‧‧第二接地點25‧‧‧second grounding point
27‧‧‧補強板27‧‧‧ reinforcing plate
31‧‧‧尖端31‧‧‧ tip
在本發明之隨附圖式中，相同的元件以相同的參考符號表示。In the accompanying drawings, the same elements are denoted by the same reference numerals.
圖1A顯示依照本發明之一實施例之同軸探針的概略橫剖面圖；1A shows a schematic cross-sectional view of a coaxial probe in accordance with an embodiment of the present invention;
圖1B顯示圖1A之同軸探針的局部放大圖；Figure 1B shows a partial enlarged view of the coaxial probe of Figure 1A;
圖2顯示依照本發明之一實施例之測試頭的立體圖；及2 shows a perspective view of a test head in accordance with an embodiment of the present invention; and
圖3顯示依照本發明之一實施例將圖2之測試頭安裝在晶圓探針卡之晶圓測試用印刷電路板上的概略局部橫剖面圖。3 is a schematic partial cross-sectional view showing the test head of FIG. 2 mounted on a wafer test card of a wafer probe card in accordance with an embodiment of the present invention.
1．．．同軸探針1. . . Coaxial probe
10．．．測試頭10. . . Test head
11．．．墊片11. . . Gasket
13．．．環部13. . . Ring
15．．．熱固性導電聚合物15. . . Thermosetting conductive polymer
17．．．接地部17. . . Grounding
19．．．焊錫19. . . Solder
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99128463A TWI411785B (en) | 2010-08-25 | 2010-08-25 | Coaxial probe for wafer probe card and spider using the coaxial probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99128463A TWI411785B (en) | 2010-08-25 | 2010-08-25 | Coaxial probe for wafer probe card and spider using the coaxial probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201209416A TW201209416A (en) | 2012-03-01 |
| TWI411785B true TWI411785B (en) | 2013-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW99128463A TWI411785B (en) | 2010-08-25 | 2010-08-25 | Coaxial probe for wafer probe card and spider using the coaxial probe |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11953521B2 (en) | 2022-08-10 | 2024-04-09 | Bao Hong Semi Technology Co., Ltd. | Probe card |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040227505A1 (en) * | 2000-07-13 | 2004-11-18 | The Micromanipulator Company, Inc. | Wafer probe station |
| TW200532209A (en) * | 2004-01-28 | 2005-10-01 | Rucker & Kolls Inc | Multi-signal single beam probe |
| TW200706878A (en) * | 2005-08-04 | 2007-02-16 | Mjc Probe Inc | High frequency cantilever type probe card |
| TW200806992A (en) * | 2006-07-26 | 2008-02-01 | Probeleader Co Ltd | Assembly structure of probe card |
| TW200823461A (en) * | 2006-11-21 | 2008-06-01 | Wen-Yu Lu | Structure of probe installed to probe card |
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2010
- 2010-08-25 TW TW99128463A patent/TWI411785B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040227505A1 (en) * | 2000-07-13 | 2004-11-18 | The Micromanipulator Company, Inc. | Wafer probe station |
| TW200532209A (en) * | 2004-01-28 | 2005-10-01 | Rucker & Kolls Inc | Multi-signal single beam probe |
| TW200706878A (en) * | 2005-08-04 | 2007-02-16 | Mjc Probe Inc | High frequency cantilever type probe card |
| TW200806992A (en) * | 2006-07-26 | 2008-02-01 | Probeleader Co Ltd | Assembly structure of probe card |
| TW200823461A (en) * | 2006-11-21 | 2008-06-01 | Wen-Yu Lu | Structure of probe installed to probe card |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11953521B2 (en) | 2022-08-10 | 2024-04-09 | Bao Hong Semi Technology Co., Ltd. | Probe card |
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| Publication number | Publication date |
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| TW201209416A (en) | 2012-03-01 |
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