TWM498966U

TWM498966U - Light emitting diode structure

Info

Publication number: TWM498966U
Application number: TW103219443U
Authority: TW
Inventors: Cheng-Yen Chen; Yu-Hung Lai
Original assignee: Genesis Photonics Inc
Priority date: 2011-06-13
Filing date: 2011-06-13
Publication date: 2015-04-11

Abstract

A light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode is provided. The light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is disposed on the first type doped semiconductor layer and includes a plurality of first branches. The second electrode is disposed on the second type doped semiconductor layer and includes a plurality of second branches. At least two second branches are disposed between two adjacent first branches.

Description

發光二極體結構Light-emitting diode structure

本新型創作是有關於一種光電元件結構，且特別是有關於一種發光二極體結構。The novel creation relates to a photovoltaic element structure, and in particular to a light-emitting diode structure.

由於發光二極體(light emitting diode,LED)結構具有低功率消耗、環保、使用壽命長及反應速率快等優勢，因此已被廣泛地應用在照明領域及顯示領域中。為了提升發光二極體的亮度，大尺寸的晶粒逐漸被開發出來。然而，習知的發光二極體結構的電極設計具有造成電流分散性不佳的缺點，而使得此電極設計不適合用於大尺寸的晶粒。Light-emitting diode (LED) structures have been widely used in the field of illumination and display because of their low power consumption, environmental protection, long service life and fast response rate. In order to increase the brightness of the light-emitting diode, large-sized crystal grains have been gradually developed. However, the electrode design of the conventional light-emitting diode structure has the disadvantage of causing poor current dispersion, making this electrode design unsuitable for use in large-sized crystal grains.

為改善上述之電流分散性不佳的問題，另一種習知電極被發展出來。此種習知電極包括配置於N型摻雜半導體層上的第一指叉狀電極以及配置於P型摻雜半導體層上的第二指叉狀電極。第一指叉狀電極與第二指叉狀電極分別具有多個第一分支部與多個第二分支部，其中相鄰之二個第一分支部中間僅配置有一個第二分支部。雖然此電極設計可改善電流分散性不佳的問題，但在此電極設計下，由於電子與電洞之遷移率(mobility)不同，電子的遷移率較電洞的遷移率快，因此自第一分支部發出之電子傳遞至第二分支部時(或第二分支部發出之電洞傳遞至第一分支部時)，第二分支部旁(或第一分支部旁)的電子濃度與電洞濃度差異極大，而使電子與電洞復合(recombination)機率較低，進而使得具有此種習知電極之發光二極體結構的發光效率不佳。In order to improve the above problem of poor current dispersion, another conventional electrode has been developed. Such a conventional electrode includes a first interdigitated electrode disposed on the N-type doped semiconductor layer and a second interdigitated electrode disposed on the P-type doped semiconductor layer. Each of the first interdigitated electrode and the second interdigitated electrode has a plurality of first branch portions and a plurality of second branch portions, wherein only one second branch portion is disposed in the middle of the adjacent two first branch portions. Although this electrode design can improve the problem of poor current dispersion, in this electrode design, since the mobility of electrons and holes is different, the mobility of electrons is faster than the mobility of holes, so since the first Electronic transmission from the branch When the second branch portion is delivered (or when the hole from the second branch portion is transmitted to the first branch portion), the electron concentration and the hole concentration of the second branch portion (or the first branch portion) are greatly different, and The probability of recombination of electrons and holes is low, and the luminous efficiency of the light-emitting diode structure having such a conventional electrode is not good.

本新型創作提供一種發光二極體結構，其具有高發光效率。The novel creation provides a light emitting diode structure with high luminous efficiency.

本新型創作之一實施例提出一種發光二極體結構，包括第一型摻雜半導體層、第二型摻雜半導體層、發光層、第一電極以及第二電極。發光層配置於第一型摻雜半導體層與第二型摻雜半導體層之間。第一電極配置於第一型摻雜半導體層上，且包括多個第一分支部。第二電極配置於第二型摻雜半導體層上，且包括多個第二分支部。相鄰之二第一分支部之間配置有至少二第二分支部。An embodiment of the present invention provides a light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is disposed on the first type doped semiconductor layer and includes a plurality of first branch portions. The second electrode is disposed on the second type doped semiconductor layer and includes a plurality of second branch portions. At least two second branch portions are disposed between the adjacent first branch portions.

基於上述，本新型創作之實施例之發光二極體結構藉由在第一電極的相鄰二第一分支部之間配置至少二第二電極的第二分支部，可使得發光二極體結構中上的電子與電洞濃度較為匹配，此可有效促進電子與電洞的復合，進而提高發光二極體結構的發光效率。Based on the above, the light-emitting diode structure of the embodiment of the present invention can make the light-emitting diode structure by disposing at least two second branch portions of the second electrode between the adjacent two first branch portions of the first electrode. The upper and middle electrons are more closely matched to the hole concentration, which can effectively promote the recombination of electrons and holes, thereby improving the luminous efficiency of the light-emitting diode structure.

為讓本新型創作之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention are more apparent and understood, and the following detailed description of the embodiments and the accompanying drawings.

100‧‧‧發光二極體結構100‧‧‧Lighting diode structure

102‧‧‧第一型摻雜半導體層102‧‧‧First type doped semiconductor layer

102a‧‧‧平台部102a‧‧‧ Platform Department

102b‧‧‧下陷部102b‧‧‧Sag

104‧‧‧第二型摻雜半導體層104‧‧‧Second type doped semiconductor layer

106‧‧‧發光層106‧‧‧Lighting layer

108‧‧‧第一電極108‧‧‧First electrode

108a‧‧‧第一分支部108a‧‧‧First Branch

108b‧‧‧第一接墊108b‧‧‧first mat

108c‧‧‧第一電極之U字形的開口108c‧‧‧ U-shaped opening of the first electrode

110‧‧‧第二電極110‧‧‧second electrode

110a‧‧‧第二分支部110a‧‧‧Second branch

110b‧‧‧第二接墊110b‧‧‧second mat

110c‧‧‧第二電極之U字形的開口110c‧‧‧ U-shaped opening of the second electrode

112‧‧‧透明導電層112‧‧‧Transparent conductive layer

200‧‧‧導電凸塊200‧‧‧conductive bumps

300‧‧‧電路板300‧‧‧ boards

D1、D2‧‧‧厚度D1, D2‧‧‧ thickness

H1、H2‧‧‧距離H1, H2‧‧‧ distance

T1、T2、T3、T4‧‧‧端點T1, T2, T3, T4‧‧‧ endpoints

圖1為本新型創作一實施例之發光二極體結構的上視示意圖。1 is a top plan view showing the structure of a light-emitting diode according to an embodiment of the present invention.

圖2為對應圖1之A-A’線所繪之剖面圖。Figure 2 is a cross-sectional view taken along line A-A' of Figure 1.

圖3為對應圖1之B-B’線所繪之剖面圖。Figure 3 is a cross-sectional view taken along line B-B' of Figure 1.

圖4示出本新型創作一實施例之發光二極體結構接合在電路板上的情形。Fig. 4 shows a state in which the light emitting diode structure of the present embodiment is bonded to a circuit board.

圖5為本新型創作一實施例之發光二極體結構的上視示意圖。FIG. 5 is a top plan view showing the structure of a light emitting diode according to an embodiment of the present invention.

圖1為本新型創作一實施例之發光二極體結構的上視示意圖。圖2為對應圖1之A-A’線所繪之剖面圖。圖3為對應圖1之B-B’線所繪之剖面圖。1 is a top plan view showing the structure of a light-emitting diode according to an embodiment of the present invention. Figure 2 is a cross-sectional view taken along line A-A' of Figure 1. Figure 3 is a cross-sectional view taken along line B-B' of Figure 1.

請同時參照圖1、圖2及圖3，本實施例之發光二極體結構100包括第一型摻雜半導體層102、第二型摻雜半導體層104、發光層106、第一電極108以及第二電極110。發光層106配置於第一型摻雜半導體層102與第二型摻雜半導體層104之間。第一電極108配置於第一型摻雜半導體層102上，而第二電極110配置於第二型摻雜半導體層104上。在本實施例中，第一型掺雜半導體層102例如為N型半導體層，而第二型掺雜104半導體層例如為P型半導體層。發光層106例如為氮化鎵(gallium nitride,GaN)層與氮化銦鎵(indium gallium nitride,InGaN)層交替堆疊的多重量子井結構(Multiple Quantum Well，MQW)。然而，在其他實施例中，發光層106亦可以是量子井結構。第一電極108與第二電極110之材質為導電材料，以單一層或是多層導電材料堆疊，其包括金、鈦、鋁、鉻、鉑、其他導電材料或這些材料的組合。但本新型創作不以上述為限。Referring to FIG. 1 , FIG. 2 and FIG. 3 , the LED structure 100 of the present embodiment includes a first type doped semiconductor layer 102 , a second type doped semiconductor layer 104 , a light emitting layer 106 , a first electrode 108 , and The second electrode 110. The light emitting layer 106 is disposed between the first type doped semiconductor layer 102 and the second type doped semiconductor layer 104. The first electrode 108 is disposed on the first type doped semiconductor layer 102, and the second electrode 110 is disposed on the second type doped semiconductor layer 104. In this embodiment, the first type is doped in half The conductor layer 102 is, for example, an N-type semiconductor layer, and the second-type doping 104 semiconductor layer is, for example, a P-type semiconductor layer. The light-emitting layer 106 is, for example, a multiple quantum well structure (MQW) in which a gallium nitride (GaN) layer and an indium gallium nitride (InGaN) layer are alternately stacked. However, in other embodiments, the luminescent layer 106 can also be a quantum well structure. The first electrode 108 and the second electrode 110 are made of a conductive material and are stacked in a single layer or a plurality of layers of conductive materials, including gold, titanium, aluminum, chromium, platinum, other conductive materials or a combination of these materials. However, this novel creation is not limited to the above.

更詳細地說，本實施例之第一型摻雜半導體層102具有相連接之平台部102a與下陷部102b，平台部102的厚度D1大於下陷部102b的厚度D2。發光層106與第二型摻雜半導體層104配置平台部102a上，且第一電極108配置於下陷部102b上。在一實施例中，發光二極體結構100可利用覆晶(flip chip)的方式來封裝。如圖4所示，本實施例可利用導電凸塊200接合(bonding)第一電極108與電路板300及接合第二電極110與電路板300。如此一來，使用者便可透過電路板300操作本實施例之發光二極體結構100。然而，在另一實施例中，發光二極體結構100亦可採用打線結合的方式來封裝，亦即可利用接合導線來接合第一電極108與電路板300及接合第二電極110與電路板300，而此時第一電極108與第二電極110背對電路板300。In more detail, the first type doped semiconductor layer 102 of the present embodiment has the connected land portion 102a and the depressed portion 102b, and the thickness D1 of the land portion 102 is larger than the thickness D2 of the depressed portion 102b. The light emitting layer 106 and the second type doped semiconductor layer 104 are disposed on the land portion 102a, and the first electrode 108 is disposed on the depressed portion 102b. In an embodiment, the LED structure 100 can be packaged by means of a flip chip. As shown in FIG. 4, the present embodiment can bond the first electrode 108 and the circuit board 300 and the second electrode 110 and the circuit board 300 by using the conductive bumps 200. In this way, the user can operate the LED structure 100 of the embodiment through the circuit board 300. However, in another embodiment, the LED structure 100 can also be packaged by wire bonding, that is, the bonding wires can be used to bond the first electrode 108 and the circuit board 300 and the second electrode 110 and the circuit board. 300, while the first electrode 108 and the second electrode 110 face away from the circuit board 300.

此外，本實施例之發光二極體結構100可進一步包括透明導電層112。透明導電層112可配置於第二電極110與第二型摻雜半導體層104之間。第二型摻雜半導體層104可藉由透明導電層112與第二電極110形成良好之歐姆接觸(ohmic contact)。透明導電層112的材質例如為銦錫氧化物(indium tin oxide，ITO)、銦鋅氧化物(indium zinc oxide,IZO)、氧化鋅(zinc oxide,ZnO)、銦錫鋅氧化物(indium tin zinc oxide,ITZO)、鋁錫氧化物(aluminum tin oxide,ATO)、鋁鋅氧化物(aluminum zinc oxide,AZO)或其他適當的透明導電材質。In addition, the light emitting diode structure 100 of the embodiment may further include a transparent conductive layer 112. The transparent conductive layer 112 can be disposed on the second electrode 110 and the second type Between the semiconductor layers 104. The second type doped semiconductor layer 104 can form a good ohmic contact with the second electrode 110 by the transparent conductive layer 112. The material of the transparent conductive layer 112 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (indium tin zinc). Oxide, ITZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) or other suitable transparent conductive material.

本實施例之第一電極108包括多個第一分支部108a，而本實施例之第二電極110亦包括多個第二分支部110a。詳言之，如圖1所示，本實施例之第一電極108包括二個第一分支部108a，而本實施例之第二電極110包括二個第二分支部110a。(圖1中繪示二個第一分支部108a及二個第二分支部110a為代表，但本新型創作之發光二極體結構並不限於圖1中所繪，圖5為本新型創作另一實施例之發光二極體結構的上視示意圖，請參照圖5，此實施例之電極可由圖1所示之第一電極108與第二電極110構成之單元U重複排列而成。The first electrode 108 of the embodiment includes a plurality of first branch portions 108a, and the second electrode 110 of the embodiment also includes a plurality of second branch portions 110a. In detail, as shown in FIG. 1, the first electrode 108 of the present embodiment includes two first branch portions 108a, and the second electrode 110 of the present embodiment includes two second branch portions 110a. (The two first branch portions 108a and the two second branch portions 110a are represented in FIG. 1 , but the structure of the light-emitting diode of the present invention is not limited to that depicted in FIG. 1 , and FIG. 5 is another novel creation. Referring to FIG. 5, the electrode of this embodiment can be repeatedly arranged by the unit U composed of the first electrode 108 and the second electrode 110 shown in FIG.

值得特別注意的是，在本實施例中，相鄰之二個第一分支部108a之間配置有至少二個第二分支部110a(圖1中繪示二個第二分支部110a為代表，但本新型創作不限於此，在其他實施例中，相鄰之二個第一分支部108a之間亦可配置有二個以上的第二分支部110a)。在本實施例中，每一該第一分支部與相鄰之該第二分支部之間的2倍最短距離H1大於或等於相鄰之二該第二分支部之間的最大距離H2，但本新型創作不限於此，距離H1與距離H2皆可視實施的設計需求而調整。It is to be noted that, in this embodiment, at least two second branch portions 110a are disposed between two adjacent first branch portions 108a (two second branch portions 110a are represented in FIG. However, the present invention is not limited thereto. In other embodiments, two or more second branch portions 110a) may be disposed between the adjacent two first branch portions 108a. In this embodiment, the 2 times shortest distance H1 between each of the first branch portions and the adjacent second branch portions is greater than or equal to the adjacent two of the second branch portions. The maximum distance between the two is H2, but the novel creation is not limited to this, and the distance H1 and the distance H2 can be adjusted according to the design requirements of the implementation.

上述之電極設計(相鄰之二個第一分支部108a之間配置有至少二個第二分支部110a)可改善習知技術中因電子與電洞遷移率(mobility)不同而造成之發光效率不佳的問題。詳細說明如下：由於電子的遷移率較電洞快，因此電子在遠離第一分支部108a處仍可維持較高的濃度。所以，當電子移動至多個相鄰的第二分支部110a之間的區域時，電子的濃度與電洞的濃度會較為接近，如此便能夠使電子與電洞有較佳的復合率，進而提升發光二極體結構100的發光效率。The electrode design described above (at least two second branch portions 110a are disposed between the adjacent two first branch portions 108a) can improve the luminous efficiency due to the difference in electron and hole mobility in the prior art. Poor question. The details are as follows: Since the electron mobility is faster than that of the hole, the electrons can maintain a high concentration away from the first branch portion 108a. Therefore, when the electrons move to the region between the plurality of adjacent second branch portions 110a, the concentration of the electrons and the concentration of the holes are relatively close, so that the electrons and the holes have a better recombination rate, thereby improving Luminous efficiency of the light emitting diode structure 100.

在本實施例中，由於每一該第一分支部與相鄰之該第二分支部之間的2倍最短距離H1大於或等於相鄰之二該第二分支部之間的最大距離H2，因此這些相鄰的第二分支部110a之間的電子濃度便能夠有效提升，而使的電子的濃度與電洞的濃度更為接近，進而藉由提升電子與電洞的復合率來提升發光二極體結構100的發光效率。In this embodiment, since the 2 times shortest distance H1 between each of the first branch portions and the adjacent second branch portions is greater than or equal to a maximum distance H2 between the adjacent two second branch portions, Therefore, the electron concentration between the adjacent second branch portions 110a can be effectively increased, and the concentration of the electrons is closer to the concentration of the holes, thereby improving the light-emitting ratio by increasing the recombination ratio of the electrons and the holes. The luminous efficiency of the polar body structure 100.

此外，就本實施例之發光二極體結構100的中間區域C而言，中間區域C與第一分支部108a的距離較遠，故由第一分支部108a發出的電子傳遞至中間區域C時，其(電子)濃度已下降。另一方面，雖然中間區域C與第二分支部110a的距離較近，但由於電洞之遷移率(mobility)較電子小，故由第二分支部110a發出之電洞傳遞至中間區域C時，其(電洞)濃度已下降至與電子濃度接近的程度。如此一來，中間區域C中的電洞濃度剛好可與中間區域C中的電子濃度匹配，進而使得電子電洞在中間區域C附近發生復合(recombination)的機率大幅提高，而更進一步地提升發光二極體結構100的發光效率，且亦能夠提升發光二極體結構100的發光均勻性。Further, in the intermediate portion C of the light-emitting diode structure 100 of the present embodiment, the intermediate portion C is far from the first branch portion 108a, so that electrons emitted from the first branch portion 108a are transmitted to the intermediate portion C. Its (electron) concentration has dropped. On the other hand, although the distance between the intermediate portion C and the second branch portion 110a is relatively short, since the mobility of the hole is smaller than that of the electron, the hole emitted by the second branch portion 110a is transmitted to the intermediate portion C. , its (hole) concentration has dropped to the electron concentration The extent of the near. In this way, the concentration of the holes in the intermediate region C can be matched with the concentration of electrons in the intermediate region C, thereby further increasing the probability of recombination of the electron holes in the vicinity of the intermediate region C, and further improving the illumination. The luminous efficiency of the diode structure 100 can also improve the uniformity of illumination of the LED structure 100.

請繼續參照圖1、圖3及圖4，本實施例之第一電極108可進一步包括至少一第一接墊108b，第一接墊108b連接第一分支部108a。本實施例之第二電極110可進一步包括至少一第二接墊110b，第二接墊110b連接第二分支部110a。在本實施例中，第二接墊110b配置於第一電極108之相鄰的二第一分支部108a之間。如圖4所示，第一接墊108b與第二接墊110b可透過導電凸塊200與電路板300連接，進而讓使用者可透過電路板300操作發光二極體結構100。Referring to FIG. 1 , FIG. 3 and FIG. 4 , the first electrode 108 of the embodiment may further include at least one first pad 108 b , and the first pad 108 b is connected to the first branch portion 108 a . The second electrode 110 of this embodiment may further include at least one second pad 110b, and the second pad 110b is connected to the second branch portion 110a. In this embodiment, the second pad 110b is disposed between the adjacent two first branch portions 108a of the first electrode 108. As shown in FIG. 4, the first pads 108b and the second pads 110b are connected to the circuit board 300 through the conductive bumps 200, thereby allowing the user to operate the LED structure 100 through the circuit board 300.

詳言之，本實施例之第一分支部108a具有相對的第一端T1與第二端T2，且第二分支部110a具有相對的第三端T3與第四端T4。第一接墊108b連接相鄰第一分支部108b的第一端T1，而第二接墊110b連接相鄰第二分支部110a的第三端T3，且第二接墊110b配置於相鄰二第一分支部108b的第四端T4之間。In detail, the first branch portion 108a of the embodiment has opposite first end T1 and second end T2, and the second branch portion 110a has opposite third end T3 and fourth end T4. The first pad 108b is connected to the first end T1 of the adjacent first branch portion 108b, and the second pad 110b is connected to the third end T3 of the adjacent second branch portion 110a, and the second pad 110b is disposed adjacent to the second Between the fourth ends T4 of the first branch portion 108b.

在本實施例中，第一電極108中之二第一分支108a呈U字形，本實施例之第二電極110中之二第二分支110a亦呈U字形。並且，第一電極108之U字形的開口108c朝向第二電極110的第二接墊110b，且第二電極110之U字形的開口110c朝向第一電極 108的第一接墊108b。In the embodiment, the first branch 108a of the first electrode 108 has a U shape, and the second branch 110a of the second electrode 110 of the embodiment also has a U shape. Moreover, the U-shaped opening 108c of the first electrode 108 faces the second pad 110b of the second electrode 110, and the U-shaped opening 110c of the second electrode 110 faces the first electrode The first pad 108b of 108.

綜上所述，本新型創作一實施例之發光二極體結構藉由在第一電極的相鄰二第一分支部之間配置至少二第二電極的第二分支部，而使得發光二極體結構各區域上的電子電洞濃度匹配，此可有效促進電子與電洞的復合，進而提高電子電洞復合之機率。如此一來，本新型創作一實施例之發光二極體結構的發光效率光提取效率便可有效提高。In summary, the light-emitting diode structure of the present embodiment creates a light-emitting diode by arranging at least two second branch portions of the second electrode between the adjacent first branch portions of the first electrode. The concentration of electron holes in each region of the body structure is matched, which can effectively promote the recombination of electrons and holes, thereby increasing the probability of electron hole compounding. In this way, the luminous efficiency of the luminous efficiency of the light-emitting diode structure of the present invention can be effectively improved.

雖然本新型創作已以實施例揭露如上，然其並非用以限定本新型創作，任何所屬技術領域中具有通常知識者，在不脫離本新型創作的精神和範圍內，當可作些許的更動與潤飾，故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

100‧‧‧發光二極體結構100‧‧‧Lighting diode structure

108‧‧‧第一電極108‧‧‧First electrode

108a‧‧‧第一分支部108a‧‧‧First Branch

108b‧‧‧第一接墊108b‧‧‧first mat

110‧‧‧第二電極110‧‧‧second electrode

110a‧‧‧第二分支部110a‧‧‧Second branch

110b‧‧‧第二接墊110b‧‧‧second mat

112‧‧‧透明導電層112‧‧‧Transparent conductive layer

A-A’、B-B’‧‧‧剖線A-A’, B-B’‧‧‧ cut line

C‧‧‧中間區域C‧‧‧Intermediate area

H1、H2‧‧‧距離H1, H2‧‧‧ distance

T1、T2、T3、T4‧‧‧端點T1, T2, T3, T4‧‧‧ endpoints

Claims

一種發光二極體結構，包括：一第一型摻雜半導體層；一第二型摻雜半導體層；一發光層，配置於該第一型摻雜半導體層與該第二型摻雜半導體層之間；一第一電極，配置於該第一型摻雜半導體層上，且包括多個第一分支部；以及一第二電極，配置於該第二型摻雜半導體層上，且包括多個第二分支部，其中該第一電極更包括至少一第一接墊，該第一接墊連接該些第一分支部，且該第二電極更包括至少一第二接墊，該第二接墊連接該些第二分支部，相鄰之二該第一分支部之間配置有至少二該第二分支部每一該第一分支部與相鄰之該第二分支部之間的2倍最短距離大於或等於相鄰之二該第二分支部之間的最大距離，相鄰的二該第二分支部與同一該第二接墊直接接觸，而該第一電極不配置於相鄰的二該第二分支部之間。A light emitting diode structure comprising: a first type doped semiconductor layer; a second type doped semiconductor layer; a light emitting layer disposed on the first type doped semiconductor layer and the second type doped semiconductor layer a first electrode disposed on the first type doped semiconductor layer and including a plurality of first branch portions; and a second electrode disposed on the second type doped semiconductor layer and including a second branching portion, wherein the first electrode further comprises at least one first pad, the first pad connecting the first branch portions, and the second electrode further comprises at least one second pad, the second The pad is connected to the second branch portions, and at least two of the second branch portions are disposed between the adjacent first branch portions and each of the second branch portions is adjacent to the second branch portion. The shortest distance is greater than or equal to the maximum distance between the adjacent two second branch portions, and the adjacent two second branch portions are in direct contact with the same second pad, and the first electrode is not disposed adjacent to The two are between the second branches.

如申請專利範圍第1項所述之發光二極體結構，其中該第一型掺雜半導體層為一N型半導體層，而該第二型掺雜半導體層為一P型半導體層。The light emitting diode structure of claim 1, wherein the first type doped semiconductor layer is an N type semiconductor layer, and the second type doped semiconductor layer is a P type semiconductor layer.

如申請專利範圍第1項所述之發光二極體結構，其中該第一型摻雜半導體層具有相連接之一平台部與一下陷部，該平台部的厚度大於該下陷部的厚度，該發光層與該第二型摻雜半導體層配置於該平台部上，且該第一電極配置於該下陷部上。The light-emitting diode structure of claim 1, wherein the first-type doped semiconductor layer has a platform portion and a lower trap portion, and the thickness of the land portion is greater than a thickness of the depressed portion. Light emitting layer and the second type doped semiconductor layer The portion is disposed on the platform portion, and the first electrode is disposed on the depressed portion.

如申請專利範圍第1項所述之發光二極體結構，其中該第二接墊配置於該第一電極之相鄰的二該第一分支部之間。The illuminating diode structure of claim 1, wherein the second pad is disposed between the adjacent first branch portions of the first electrode.

如申請專利範圍第1項所述之發光二極體結構，其中該第一電極中之二該第一分支呈U字形，且該第二電極中之二該第二分支呈U字形，該第一電極之該U字形的開口朝向該第二電極的該第二接墊，且該第二電極之該U字形的開口朝向該第一電極的該第一接墊。The light emitting diode structure of claim 1, wherein the first branch of the first electrode has a U shape, and the second branch of the second electrode has a U shape, the first The U-shaped opening of an electrode faces the second pad of the second electrode, and the U-shaped opening of the second electrode faces the first pad of the first electrode.

如申請專利範圍第1項所述之發光二極體結構，其中每一該第一分支部具有相對的一第一端與一第二端，且每一該第二分支部具有相對的一第三端與該第四端，該第一接墊連接該些第一分支部的該些第一端，該第二接墊連接該些第二分支部的該些第三端，且該第二接墊配置於相鄰二該第一分支部的該些第四端之間。The light emitting diode structure of claim 1, wherein each of the first branch portions has a first end and a second end, and each of the second branches has a first The third end is connected to the first ends of the first branch portions, the second pads are connected to the third ends of the second branch portions, and the second end The pads are disposed between the adjacent fourth ends of the first branch portions.

如申請專利範圍第1項所述之發光二極體結構，其中該發光二極體結構用於覆晶方式的封裝。The light-emitting diode structure of claim 1, wherein the light-emitting diode structure is used for flip-chip packaging.

如申請專利範圍第1項所述之發光二極體結構，更包括一透明導電層，配置於該第二電極與該第二型摻雜半導體層之間。The light emitting diode structure of claim 1, further comprising a transparent conductive layer disposed between the second electrode and the second type doped semiconductor layer.