TWM384394U - Transparent conductive film substrate structure with a buffer layer - Google Patents

Transparent conductive film substrate structure with a buffer layer Download PDF

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Publication number
TWM384394U
TWM384394U TW99202871U TW99202871U TWM384394U TW M384394 U TWM384394 U TW M384394U TW 99202871 U TW99202871 U TW 99202871U TW 99202871 U TW99202871 U TW 99202871U TW M384394 U TWM384394 U TW M384394U
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TW
Taiwan
Prior art keywords
buffer layer
transparent conductive
conductive film
substrate
substrate structure
Prior art date
Application number
TW99202871U
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Chinese (zh)
Inventor
Yi Guan
Yin-Feng Lan
wen-quan Wu
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Cheeshin Technology Co Ltd
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Publication date
Application filed by Cheeshin Technology Co Ltd filed Critical Cheeshin Technology Co Ltd
Priority to TW99202871U priority Critical patent/TWM384394U/en
Publication of TWM384394U publication Critical patent/TWM384394U/en

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Description

M384394 五、新型說明: 【新型所屬之技術領域】 本創作係與一種透明導電膜有關,特別是指一種具緩衝層 之透明導電膜基板構造。 【先前技術】 按,透明導電膜為具良好光學穿透度及導電性的金屬氧化 物,因此被廣泛應用為光電元件、平面顯示器、觸控面板以及 太陽能電池等元件之透明導電電極。而以往透明導電膜皆沉積 #於玻璃基板上,但玻璃卻重量大、财衝擊性差與不可撓等缺 點,近年來,隨著攜帶型消費性電子產品的曰新月異和軟性電 子產品之進步,產品之輕量化、财衝擊及彎曲性之需求的提 高,因此將透明導電膜沉積於高分子基板上之應用成為一種趨 勢。透明導電膜成長於高分子基板時會因耐熱性不佳而造成基 板彎曲,熱膨脹係數之差異造成薄膜應力問題,且高分子基板 易吸收水氣問題也會影響透明導電膜沉積過程中之化學計量 比,因而限制透明導電膜的生長與品質。此外,沉積透明導電 φ膜之高分子基板也面臨彎曲特性如彎曲程度(Bending „ ability)、彎曲壽命等問題,是以,習知技術與結構實有待加 以改善之必要。 【新型内容】 本創作主要目的在提供一種具緩衝層之透明導電膜基板 構造,使可具有防阻水氣及改善機械應力之效用。 本創作具緩衝層之透明導電膜基板構造,其係包含有一基 材、至少一緩衝層及一透明導電膜,該基板係大體為一板體, 且其表面上係設有緩衝層,同時,該緩衝層於對應該基材另侧 係更設有該透明導電膜。 3 M384394 本創作藉由於基材與透明導電膜間設置緩衝層,而達到防 阻水氣及減缓透明導電膜與基材間的應力,並使透明導電膜不 易破裂。 【實施方式】 首先,請參閱第一圖所示,為本創作第一實施例之結構示 意圖,其包含有: 一基材10,係大體為一板體,且於本創作實施例中該基 材10係為聚對苯二甲酸乙二醇(PET)材質,並可彈性彎折。 至少一緩衝層20,係設於該基材10之表面上,而於本創 作第一實施例中該基材10相對側之表面上係分別設有一緩衝 層20,且該等缓衝層20係為二氧化矽(Si〇2)材質,同時,該 等緩衝層20係很緻密且具有阻氣及阻水之效用。 一透明導電膜30,係設於其中一緩衝層20之表面上,且 對應位於該基材10的另側,於本創作實施例中該透明導電膜 30係為氧化銦錫(Indium tin oxide, I TO)透明導電膜。 為供進一步瞭解本創作構造特徵、運用技術手段及所預期 達成之功效,茲將本創作使用方式加以敘述,相信當可由此而 對本創作有更深入且具體之瞭解,如下所述: 仍請參閱第一圖所示,於成長第一實施例之結構時,係在 該基材10上先濺鍍上該等缓衝層20,其次再於該缓衝層20 上濺鍍該透明導電膜30,而完成本創作第一實施例之基板構 造,於本創作實施例中該緩衝層20係可防阻水氣並明顯改善 該透明導電膜30在該基材10上的機械特性,其主要是因為缓 衝層20可以減緩該透明導電膜30與該基材10間的應力,使 該透明導電膜30不易破裂。 請配合參閱第二圖所示,為本創作第二實施例之結構示意 4 M384394 圖;本創作第二實施例與上述第一實施例大體皆為相同,而主 要不同處係在於,該基材10相對側之表面上係分別設有一緩 衝層20及一硬化層40,而該緩衝層20於對應該基材10另側 表面係再設有該透明導電膜30,其中,該硬化層40係具有耐 磨耗之效用。 再請配合參閱第三圖所示,為本創作第三實施例之結構示 意圖;本創作第三實施例與上述第二實施例大體皆為相同,而 主要不同處係在於,該硬化層40於對應該基材10另側之表面 鲁係再設有一緩衝層2 0。 請同時配合參閱第四圖所示,為本創作第四實施例之結構 示意圖;本創作第四實施例與上述第二實施例大體皆為相同, 而主要不同處係在於,該緩衝層20與該透明導電膜30間係再 設有一緩衝層20,且該緩衝層20係為二氧化鈦(Ti〇2)。 茲,再將本創作之特徵及其可達成之預期功效陳述如下: 本創作具緩衝層之透明導電膜基板構造係先將基材上鍍 有緩衝詹,並再沉積透明導電膜於緩衝層上,而使可藉由緩衝 φ層之特性而達到防阻水氣及減緩透明導電膜與基材間的應 .力,使透明導電膜不易破裂。 綜上所述,本創作在同類產品中實有其極佳之進步實用 性,同時遍查國内外關於此類結構之技術資料,文獻中亦未發 現有相同或近似的構造存在在先,是以,本創作實已具備新型 專利要件,爰依法提出申請。 惟,以上所述者,僅係本創作之較佳可行實施例而已,故 舉凡應用本創作說明書及申請專利範圍所為之等效結構變 化,理應包含在本創作之專利範圍内。 5 M384394 【圖式簡單說明】 第一圖係本創作第一實施例之結構示意圖。 第二圖係本創作第二實施例之結構示意圖。 第三圖係本創作第三實施例之結構示意圖。 第四圖係本創作第四實施例之結構示意圖。 【主要元件符號說明】 10 基材 20 緩衝層 30 透明導電膜 40 硬化層M384394 V. New description: [New technical field] This creation is related to a transparent conductive film, especially a transparent conductive film substrate structure with a buffer layer. [Prior Art] Since the transparent conductive film is a metal oxide having good optical transparency and conductivity, it is widely used as a transparent conductive electrode of a photovoltaic element, a flat panel display, a touch panel, and a solar cell. In the past, transparent conductive films were deposited on glass substrates, but the weight of the glass was large, the impact of the financial impact was poor and inflexible. In recent years, with the rapid development of portable consumer electronic products and the advancement of soft electronic products. As the demand for light weight, financial impact and flexibility of the product is increased, the application of depositing a transparent conductive film on a polymer substrate has become a trend. When the transparent conductive film grows on the polymer substrate, the substrate is bent due to poor heat resistance, and the difference in thermal expansion coefficient causes the film stress problem, and the problem that the polymer substrate easily absorbs moisture also affects the stoichiometry during the deposition process of the transparent conductive film. The ratio thus limits the growth and quality of the transparent conductive film. In addition, the polymer substrate on which the transparent conductive φ film is deposited also faces problems such as bending properties such as bending property and bending life, and it is necessary to improve the conventional technology and structure. [New content] This creation The main purpose of the invention is to provide a transparent conductive film substrate structure with a buffer layer, which can have the effect of preventing moisture and improving mechanical stress. The transparent conductive film substrate structure with a buffer layer comprises a substrate, at least one a buffer layer and a transparent conductive film, the substrate is substantially a plate body, and a buffer layer is disposed on the surface thereof, and the buffer layer is further provided with the transparent conductive film on the other side of the corresponding substrate. 3 M384394 In the present invention, a buffer layer is provided between the substrate and the transparent conductive film to prevent moisture and to relieve stress between the transparent conductive film and the substrate, and the transparent conductive film is not easily broken. [Embodiment] First, please refer to The first figure shows a schematic structural view of a first embodiment of the present invention, which comprises: a substrate 10, which is substantially a plate body, and is in the present embodiment. The substrate 10 is made of polyethylene terephthalate (PET) and can be elastically bent. At least one buffer layer 20 is disposed on the surface of the substrate 10, and in the first embodiment of the present creation A buffer layer 20 is disposed on the surface of the opposite side of the substrate 10, and the buffer layers 20 are made of cerium oxide (Si〇2). At the same time, the buffer layers 20 are dense and have gas barrier. And a water-blocking effect. A transparent conductive film 30 is disposed on a surface of one of the buffer layers 20 and correspondingly located on the other side of the substrate 10. In the present embodiment, the transparent conductive film 30 is indium oxide. Tin (Indium tin oxide, I TO) transparent conductive film. For further understanding of the characteristics of this creation, the use of technical means and the expected results, I will use this creative method to describe, I believe that this can be more In-depth and specific understanding, as follows: Still referring to the first figure, when the structure of the first embodiment is grown, the buffer layer 20 is sputtered on the substrate 10, and then The transparent conductive film 30 is sputtered on the buffer layer 20, and the present invention is completed. As the substrate structure of the first embodiment, in the present embodiment, the buffer layer 20 is resistant to moisture and significantly improves the mechanical properties of the transparent conductive film 30 on the substrate 10, mainly because of the buffer layer. 20, the stress between the transparent conductive film 30 and the substrate 10 can be slowed down, and the transparent conductive film 30 is not easily broken. Please refer to the second figure for the structure of the second embodiment of the present invention. The second embodiment is substantially the same as the first embodiment described above, and the main difference is that a buffer layer 20 and a hardened layer 40 are respectively disposed on the opposite sides of the substrate 10, and the buffer layer 20 is provided. The transparent conductive film 30 is further provided on the other side surface of the corresponding substrate 10, wherein the hardened layer 40 has an abrasion resistance effect. Please refer to the third figure for a schematic structural view of the third embodiment of the present invention; the third embodiment of the present invention is substantially the same as the second embodiment described above, and the main difference is that the hardened layer 40 is A buffer layer 20 is further provided on the surface of the other side of the substrate 10. Please refer to the fourth figure at the same time, which is a schematic structural view of the fourth embodiment of the present invention; the fourth embodiment of the present invention is substantially the same as the second embodiment described above, and the main difference is that the buffer layer 20 and A buffer layer 20 is further disposed between the transparent conductive films 30, and the buffer layer 20 is made of titanium dioxide (Ti〇2). Hereby, the characteristics of this creation and its expected efficacies are stated as follows: The transparent conductive film substrate structure with buffer layer is firstly coated with a buffer on the substrate, and a transparent conductive film is deposited on the buffer layer. Therefore, by blocking the characteristics of the φ layer, it is possible to prevent moisture and to reduce the stress between the transparent conductive film and the substrate, so that the transparent conductive film is not easily broken. In summary, this creation has its excellent progress and practicality in similar products. At the same time, it has checked the technical data of such structures at home and abroad. The same or similar structure exists in the literature. Therefore, this creation has already possessed new types of patent requirements, and applied for it according to law. However, the above descriptions are only preferred embodiments of the present invention, and the equivalent structural changes in the scope of the present application and the scope of the patent application are intended to be included in the scope of the present invention. 5 M384394 [Simple description of the drawings] The first figure is a schematic structural view of the first embodiment of the present creation. The second figure is a schematic structural view of the second embodiment of the present creation. The third figure is a schematic structural view of the third embodiment of the present creation. The fourth figure is a schematic structural view of the fourth embodiment of the present creation. [Main component symbol description] 10 Substrate 20 Buffer layer 30 Transparent conductive film 40 Hardened layer

Claims (1)

M384394 六、申請專利範圍: 1、 一種具緩衝層之透明導電膜基板構造,其主要係包含 有: 一基材,係大體為一板體; 至少一緩衝層,係設於該基材一側表面上;以及, 一透明導電膜,係設於該緩衝層之表面上,且對應位於該 基材的另側。 2、 依申請專利範圍第1項所述之具缓衝層之透明導電膜 ‘基板構造,其中,該基材係為聚對苯二曱酸乙二醇(PET)材質, 且可彈性彎折。 3、 依申請專利範圍第1項所述之具緩衝層之透明導電膜 基板構造,其中,該基材於對應該缓衝層另側之表面係設有另 一緩衝層。 4、 依申請專利範圍第1項所述之具緩衝層之透明導電膜 基板構造,其中,該基材於對應該緩衝層另側之表面係設有一 硬化層。 φ 5、依申請專利範圍第4項所述之具緩衝層之透明導電膜 . 基板構造,其中,該硬化層於對應該基材另側之表面係設有另 一缓衝層。 6、依申請專利範圍第4項所述之具緩衝層之透明導電膜 基板構造,其中,該緩衝層與該透明導電膜間係設有另一缓衝M384394 VI. Patent Application Range: 1. A transparent conductive film substrate structure with a buffer layer, which mainly comprises: a substrate which is substantially a plate body; at least one buffer layer is disposed on one side of the substrate And a transparent conductive film is disposed on the surface of the buffer layer and correspondingly located on the other side of the substrate. 2. The transparent conductive film 'substrate structure with a buffer layer according to claim 1 of the patent application scope, wherein the substrate is made of polyethylene terephthalate (PET) material and elastically bendable . 3. The transparent conductive film substrate structure having a buffer layer according to claim 1, wherein the substrate is provided with another buffer layer on a surface corresponding to the other side of the buffer layer. 4. The transparent conductive film substrate structure having a buffer layer according to claim 1, wherein the substrate is provided with a hardened layer on a surface corresponding to the other side of the buffer layer. Φ 5. A transparent conductive film having a buffer layer according to item 4 of the patent application scope. The substrate structure, wherein the hardened layer is provided with another buffer layer on a surface corresponding to the other side of the substrate. 6. A transparent conductive film substrate structure having a buffer layer according to claim 4, wherein another buffer is provided between the buffer layer and the transparent conductive film.
TW99202871U 2010-02-10 2010-02-10 Transparent conductive film substrate structure with a buffer layer TWM384394U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103814348A (en) * 2011-09-21 2014-05-21 日本写真印刷株式会社 Capacitance-type touch sensor and display device equipped therewith

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103814348A (en) * 2011-09-21 2014-05-21 日本写真印刷株式会社 Capacitance-type touch sensor and display device equipped therewith
CN103814348B (en) * 2011-09-21 2015-09-09 日本写真印刷株式会社 Electrostatic capacity type touch sensor and comprise the display device of this touch sensor

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