TWM352764U - Constant temperature gas/liquid mixture generating system for using in wafer drying process - Google Patents

Constant temperature gas/liquid mixture generating system for using in wafer drying process Download PDF

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Publication number
TWM352764U
TWM352764U TW097210878U TW97210878U TWM352764U TW M352764 U TWM352764 U TW M352764U TW 097210878 U TW097210878 U TW 097210878U TW 97210878 U TW97210878 U TW 97210878U TW M352764 U TWM352764 U TW M352764U
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Taiwan
Prior art keywords
liquid
gas
wafer
wafer drying
liquid mixing
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TW097210878U
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Chinese (zh)
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Hung-Liang Hsieh
Pen-Hsieh Hsu
Ghuan-Chang Feng
Mao-Lin Liu
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Scientech Corp
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Priority to TW097210878U priority Critical patent/TWM352764U/en
Priority to SG200807198-7A priority patent/SG158000A1/en
Publication of TWM352764U publication Critical patent/TWM352764U/en
Priority to US12/483,024 priority patent/US20090315197A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A constant temperature gas/liquid mixture generating system for using in wafer drying process is disclosed, which includes: an inner tank; a first liquid supplying device, which is used to supply liquid IPA to said inner tank; a gas supplying device, which is used to supply N2 to said inner tank; a exhausting device, which is used to exhaust mixed gas of IPA and N2 from said constant temperature gas/liquid mixture generating system; a outer tank, having a distance from said inner tank; a second liquid supplying device, which is used to supply a second liquid to said outer tank; a temperature control device, which is used to control said second liquid to an appropriate temperature range; and a draining device, which is used to drain said second liquid out of said outer tank.

Description

* M352764 八、新型說明： 【新型所屬之技術領域】 本創作係關於一種晶圓乾燥用之系統，特別是一種可安全地加熱產生晶圓 乾燥用之氣體的氣液混合恆溫系統。 【先前技術】 在晶圓乾燥製程中的乾燥技術之一，係以惰性氣體如氮氣…幻，混合霧狀之 籲有機溶劑媒如異丙醇(Isopropyl Alcohol，IPA)，加熱該混合體至蒸發，當所產生 之蒸氣與晶圓接觸時，可取代晶圓清洗時所殘留的純水或水氣，再接著使用熱 氮氣蒸發IPA並且乾燥晶圓。 已被廣泛使用的金門機(Kimmon)即使用上述之原理，將有機溶劑異丙醇 (IPA)加熱/蒸發至超過200。^，以異丙醇蒸氣取代晶圓表面上之純水或水氣後， 再加熱氮氣(N2)’以熱氮氣蒸發液態異丙醇並乾燥晶圓。然而，由於正八為引火 性液體’此方法在使用±具有易發生火災的問題，形成安全上的疑慮。 由東京威力所申請的台灣發明專利公開號2〇〇714843，係提供一種蒸氣乾燥 鲁方献其裝置，該裝置係將液態異丙醇與氮氣在一混合室先混合，再送往一個 ^乳發生裝置加織產生晶圓乾制之蒸氣。該蒸氣發生裝置加熱源係使用光 -月匕源’結構主要包括容器本體、鹵素燈、隔熱材、以及構成職狀之螺旋管， 該裝置的結構相當複雜，雖然可利用光源溫和地加熱ιρΑ與N2混合體，但設備 的成本上也相對的提高。 為解決習知乾燥氣體生成設備上的安全問題，同時提供一種結構簡單、成 本較低的ex備，本案遂提出—種晶圓乾制之氣液混合丨m统，係針對上述 習知的技術結構進行改良，並解決安全上的問題。 5* M352764 VIII. New Description: [New Technology Area] This creation is about a system for wafer drying, especially a gas-liquid mixing constant temperature system that can safely heat the gas for wafer drying. [Prior Art] One of the drying techniques in the wafer drying process is to heat the mixture to an evaporation by an inert gas such as nitrogen, mixed with an organic solvent such as Isopropyl Alcohol (IPA). When the generated vapor contacts the wafer, it can replace the pure water or moisture remaining in the wafer cleaning, and then use the hot nitrogen to evaporate the IPA and dry the wafer. The Kimmon, which has been widely used, uses the above principle to heat/evaporate the organic solvent isopropyl alcohol (IPA) to over 200. ^, after replacing the pure water or moisture on the surface of the wafer with isopropanol vapor, heat the nitrogen (N2) to evaporate the liquid isopropanol with hot nitrogen and dry the wafer. However, since the positive eight is a igniting liquid, this method has a safety problem because it has a problem that is prone to fire. Taiwan Patent Publication No. 2,714,843, filed by the Japanese Patent Application No. 714 843, which is incorporated herein by reference to the utility of the utility of the utility of the utility of the utility of the utility of the utility of the utility of the utility model, the liquid isopropanol and nitrogen are mixed firstly in a mixing chamber and then sent to a milk The device is woven to produce a wafer-dried vapor. The steam generating device heating source uses a light-moon source structure mainly comprising a container body, a halogen lamp, a heat insulating material, and a spiral tube forming a job. The structure of the device is quite complicated, although the light source can be used to gently heat the light. Mixed with N2, but the cost of the equipment is also relatively increased. In order to solve the safety problem on the conventional dry gas generating equipment, and at the same time to provide a simple structure and low cost ex equipment, the present invention proposes a wafer-drying gas-liquid mixing system, which is directed to the above-mentioned conventional technology. The structure is improved and the security issues are solved. 5

Claims (1)

97.97. M352764 '九、申請專利範園： 1. 一種晶圓乾燥用之氣液溫合恒·溫系統’主要包含: 一内槽； 一第一液體注入裝置，用以將一第一液體注入該内槽； 一進氣裝置，用以將一氣體注入該内槽，其中該氣體與該第一液體混合產生 一混合氣體； 一排氣裝置，用以將該混合氣體排出該晶圓乾燥用之氣液混合恆溫系統； 一外槽，與該内槽具有一間距； 一第二液體注入裝置，用以將一第二液體注入該外槽； 一溫度調節裝置，用以調整該第二液體至一適當溫度範圍；以及 一出水裝置，用以將該第二液體排出該外槽。 2.如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，其中該進氣裝置 進一步包含： 一進氣部；以及 一底部出氣裝置，與該進氣部相連，用以將該氣體自該内槽底部注入該 内槽内。 3.如申料利範圍第2項之晶圓乾_之氣祕合丨互溫系統，其巾該底部出氣 裝置設有至少一出氣孔。 4·如申請專利酬第2項之晶圓乾_之氣液混合丨m統，其中該底部出氣 裝置大致分布於該内槽整個底部。 5·如申凊專利範圍第1項之晶圓乾燥用之氣液混合恒溫系統，其中該進氣襄置 係供應氮氣。 〃 ^ 6. 圍第1項之晶圓乾_之氣液混合㈣統，其中該第一液體 係為液態、異丙醇。 7·如申4專她圍第丨項之晶圓乾燥狀氣液混合怪溫系統， 人 一液面偵測裝置設於該内槽中。 、 12 M352764M352764 'Nine, apply for a patent garden: 1. A gas-liquid temperature constant temperature system for wafer drying' mainly includes: an inner tank; a first liquid injection device for injecting a first liquid into the inner tank; An air intake device for injecting a gas into the inner tank, wherein the gas is mixed with the first liquid to generate a mixed gas; and an exhaust device for discharging the mixed gas to the gas-liquid mixture for drying the wafer a constant temperature system; an outer tank having a distance from the inner tank; a second liquid injection device for injecting a second liquid into the outer tank; and a temperature adjusting device for adjusting the second liquid to a suitable temperature a range; and a water outlet device for discharging the second liquid out of the outer tank. 2. The gas-liquid mixing thermostat system for wafer drying according to claim 1, wherein the air intake device further comprises: an air inlet portion; and a bottom air outlet device connected to the air inlet portion for The gas is injected into the inner tank from the bottom of the inner tank. 3. For example, in the wafer dry _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 4. If the application of the patent remuneration 2 of the wafer dry _ gas-liquid mixing system, wherein the bottom gas outlet device is distributed substantially at the entire bottom of the inner tank. 5. The gas-liquid mixing thermostat system for wafer drying according to item 1 of the patent application scope, wherein the intake port is supplied with nitrogen gas. 〃 ^ 6. The liquid-liquid mixture (four) of the wafer dryness of the first item, wherein the first liquid is liquid, isopropanol. 7. For example, Shen 4 specializes in the wafer dry-type gas-liquid mixing temperature system of the second item, and a liquid level detecting device is disposed in the inner tank. , 12 M352764 f. I VS:J:n猶)t| 8. 如申請專利範圍第7項之晶圓乾燥用之氣液混合恆溫系統，其中該液面偵測 裝置可為浮動式。 9. 如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，其中該外槽中之 第二液體具有高於室溫之溫度。 10. 如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，其中該溫度調節 裝置係調整該第二液體至該適當溫度範圍，該適當溫度範圍係為約 450〜800C。f. I VS: J: n eu) t| 8. The gas-liquid mixing thermostat system for wafer drying according to claim 7 of the patent application, wherein the liquid level detecting device can be floating. 9. The gas-liquid mixing thermostat system for wafer drying according to claim 1, wherein the second liquid in the outer tank has a temperature higher than room temperature. 10. The gas-liquid mixing thermostat system for wafer drying according to claim 1, wherein the temperature adjusting device adjusts the second liquid to the appropriate temperature range, which is about 450 to 800C. 11. 如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，其中該第二液體 可為經處理後之工業用水。 12. 如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，進一步包含一溫 度測量裝置，用以測量該第二液體之溫度。 13. 如申請專利範圍第1項之晶圓乾燥用之氣液混合恆溫系統，其中該外槽進一 步包括至少一隔板，用以界定該第二液體之流動路徑。 14. 一種晶圓乾燥用之氣液混合恆溫系統，主要包含： 一液體供給裝置，用以供應一第一液體； 一氣體供給裝置，用以供應一氣體；11. The gas-liquid mixing thermostat system for wafer drying according to claim 1, wherein the second liquid is treated industrial water. 12. The gas-liquid mixing thermostat system for wafer drying according to claim 1 further comprising a temperature measuring device for measuring the temperature of the second liquid. 13. The gas-liquid mixing thermostat system for wafer drying according to claim 1, wherein the outer tank further comprises at least one partition for defining a flow path of the second liquid. 14. A gas-liquid mixing thermostat system for wafer drying, comprising: a liquid supply device for supplying a first liquid; and a gas supply device for supplying a gas; 一氣液混合恆溫裝置，與該液體供給裝置以及該氣體供給裝置相連，以導入 該第一液體與該氣體並混合兩者，形成一混合氣體，主要包括： 一内槽； 一第一液體注入裝置，用以將該液體供給裝置所提供之第一液體注入該 内槽； 一進氣裝置，用以將該氣體供給裝置所提供之氣體注入該内槽，其中該 氣體與該第一液體混合產生一混合氣體； 一排氣裝置，用以將該混合氣體排出該氣液混合恆溫裝置； 一外槽，與該内槽具有一間距； 一第二液體注入裝置，用以將一第二液體注入該外槽； 13 M352764 97. 3 1 月曰 一溫度調節裝置，用以調整該第二液體至一適當溫度範圍； 一出水裝置，用以將該第二液體排出該外槽；以及 一晶圓乾燥裝置，與該氣液混合恆溫裝置相連，係導入該混合氣體以乾燥晶 圓。 15·如申請專利範圍第14項之晶圓乾燥用之氣液混合恆溫系統，其中該第一液體 係為液態異丙醇。 16. 如申請專利範圍第14項之晶圓乾燥用之氣液混合恆溫系統，其中該氣體供給 裝置所供給之氣體係為氮氣。a gas-liquid mixing thermostat device is connected to the liquid supply device and the gas supply device to introduce the first liquid and the gas and mix the two to form a mixed gas, which mainly comprises: an inner tank; a first liquid injection device The first liquid supplied from the liquid supply device is injected into the inner tank; an air inlet device is configured to inject the gas supplied from the gas supply device into the inner tank, wherein the gas is mixed with the first liquid to generate a mixed gas; an exhausting device for discharging the mixed gas to the gas-liquid mixing thermostat; an outer tank having a spacing from the inner tank; and a second liquid injecting device for injecting a second liquid The outer tank; 13 M352764 97. 3 January 1 temperature adjusting device for adjusting the second liquid to a suitable temperature range; a water discharging device for discharging the second liquid to the outer tank; and a wafer A drying device is connected to the gas-liquid mixing thermostat to introduce the mixed gas to dry the wafer. 15. A gas-liquid mixing thermostat system for wafer drying according to claim 14 wherein the first liquid is liquid isopropanol. 16. The gas-liquid mixing thermostat system for wafer drying according to claim 14 wherein the gas supply system supplies nitrogen gas. 17. 如申請專利範圍第14項之晶圓乾燥用之氣液混合恆溫系統，其中該晶圓乾燥 裝置進一步包含一晶圓乾燥室。 18. 如申請專利範圍第17項之晶圓乾燥用之氣液混合恆溫系統，進一步包含一氣 體輸送裝置，用以輸送該混合氣體自該氣液混合恆溫裝置至該晶圓乾燥室。 19. 如申請專利範圍第18項之晶圓乾燥用之氣液混合恆溫系統，其中該晶圓乾燥 室進一步包含至少一喷嘴埠，係與該氣體輸送裝置相連，用以供應該混合氣 體藉此乾燥晶圓。 20. 如申請專利範圍第14項之晶圓乾燥用之氣液混合恆溫系統，其中該氣液混合 恆溫裝置所提供之溫度係高於室溫。17. The gas-liquid mixing thermostat system for wafer drying according to claim 14 wherein the wafer drying apparatus further comprises a wafer drying chamber. 18. The gas-liquid mixing thermostat system for wafer drying according to claim 17 further comprising a gas delivery device for conveying the mixed gas from the gas-liquid mixing thermostat to the wafer drying chamber. 19. The gas-liquid mixing thermostat system for wafer drying according to claim 18, wherein the wafer drying chamber further comprises at least one nozzle port connected to the gas delivery device for supplying the mixed gas. Dry the wafer. 20. The gas-liquid mixing thermostat system for wafer drying according to claim 14 wherein the gas-liquid mixing thermostat provides a temperature higher than room temperature. 14 300M352764 97. 10 3 1； ； ..ι，.14 300M352764 97. 10 3 1; ; ..ι,. 第三圖 17Figure III
TW097210878U 2008-06-19 2008-06-19 Constant temperature gas/liquid mixture generating system for using in wafer drying process TWM352764U (en)

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Application Number Priority Date Filing Date Title
TW097210878U TWM352764U (en) 2008-06-19 2008-06-19 Constant temperature gas/liquid mixture generating system for using in wafer drying process
SG200807198-7A SG158000A1 (en) 2008-06-19 2008-09-26 Thermostatic gas/liquid mixture generating system for use in wafer drying process
US12/483,024 US20090315197A1 (en) 2008-06-19 2009-06-11 Constant temperature gas/liquid mixture generating system for use in wafer drying process

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Application Number Priority Date Filing Date Title
TW097210878U TWM352764U (en) 2008-06-19 2008-06-19 Constant temperature gas/liquid mixture generating system for using in wafer drying process

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CN218553709U (en) * 2022-09-08 2023-03-03 上海至纯洁净***科技股份有限公司 Be applied to isopropanol and nitrogen gas blending tank among wafer drying device

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