TWI392046B - Improved substrate drying system and improved method for drying substrate - Google Patents
Improved substrate drying system and improved method for drying substrate Download PDFInfo
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本發明係關於一種基板乾燥系統，尤指利用高頻振動裝置霧化異丙酮，並藉由氣體流量控制裝置與層流裝置之使用，以有效地提升乾燥基板表面之效果之一種改良之基板乾燥系統及乾燥基版之方法。The invention relates to a substrate drying system, in particular to an improved substrate drying method for atomizing isopropanone by a high frequency vibration device and using the gas flow control device and the laminar flow device to effectively enhance the effect of drying the surface of the substrate. System and method of drying the substrate.
在晶圓(wafer)乾燥製程當中，其最常使用之技術為Marangoni乾燥法。Marangoni乾燥法係以惰性氣體，例如：氮氣，混合霧狀之有機溶劑，例如：異丙酮(Isopropyl Alcohol，IPA)，當氮氣與異丙酮混合體與晶圓表面接觸之時，透過異丙酮與浸泡晶圓的去離子水(Deionization Water,DIW)之間表面張力的差異，使得殘留於晶圓表面之水分子脫離晶圓表面，而被拉入去離子水之內，以達到乾燥晶圓表面之效果。In the wafer drying process, the most commonly used technique is the Marangoni drying process. The Marangoni drying method uses an inert gas such as nitrogen to mix a misty organic solvent such as Isopropyl Alcohol (IPA). When the nitrogen and isopropanone mixture is in contact with the wafer surface, it is immersed in isopropanone and soaked. The difference in surface tension between the deionized water (DIW) of the wafer causes the water molecules remaining on the surface of the wafer to be separated from the surface of the wafer and pulled into the deionized water to dry the surface of the wafer. effect.
請參閱第一圖，係習知之晶圓乾燥系統，習知之晶圓乾燥系統3係運用Marangoni乾燥法所組裝而成，其主要包括：一乾燥槽31、一異丙醇儲存槽32、一去離子水注入裝置33、一排水裝置34、一氮氣輸入裝置35、一輸送管36、及一加熱裝置37。而使用習知之晶圓乾燥系統3進行一晶圓38之乾燥，其動作可歸納如下：首先，將該晶圓38置入該乾燥槽31內；接著，透過該去離子水注入裝置33注入去離子水於乾燥槽31內；然後，透過該氮氣輸入裝置35將氮氣輸入該異丙醇儲存槽32之內，以利用氮氣將異丙酮經由該輸送管36運送至該加熱裝置37；加熱裝置37會將氮氣與異丙酮之混合體加熱成為蒸氣狀態；接著，經由輸送管36繼續將蒸氣狀態之氮氣與異丙酮混合體送進乾燥槽31內，以使得乾燥槽31內佈滿蒸氣狀態之氮氣與異丙酮混合體；然後，將乾燥槽31內之晶圓38緩緩舉離去離子水之液面；當氮氣與異丙酮混合體與晶圓38表面接觸之時，此時，由於晶圓38表面之異丙酮濃度大於去離子水之異丙酮濃度，因此，利用異丙酮的表面張力小於浸泡晶圓38之去離子水表面張力之特性，使得殘留於晶圓38表面之水分子脫離晶圓38表面，而被吸進去離子水之內，達到了乾燥晶圓38表面之功效。Please refer to the first figure, which is a conventional wafer drying system. The conventional wafer drying system 3 is assembled by Marangoni drying method, which mainly comprises: a drying tank 31, an isopropyl alcohol storage tank 32, and a An ion water injection device 33, a drain device 34, a nitrogen gas input device 35, a delivery tube 36, and a heating device 37. The drying of a wafer 38 is performed by using the conventional wafer drying system 3. The operation can be summarized as follows: First, the wafer 38 is placed in the drying tank 31; then, it is injected through the deionized water injection device 33. The ionized water is in the drying tank 31; then, nitrogen gas is introduced into the isopropanol storage tank 32 through the nitrogen input device 35 to transport the isopropanone to the heating device 37 via the delivery pipe 36 by using nitrogen gas; the heating device 37 The mixture of nitrogen and iso-acetone is heated to a vapor state; then, the nitrogen gas and the iso-acetone mixture in a vapor state are continuously fed into the drying tank 31 via the transfer pipe 36, so that the drying tank 31 is filled with nitrogen in a vapor state. Mixing with iso-acetone; then, lifting the wafer 38 in the drying tank 31 slowly away from the liquid surface of the deionized water; when the nitrogen-iso-acetone mixture is in contact with the surface of the wafer 38, at this time, due to the wafer The concentration of iso-acetone on the surface of 38 is greater than the concentration of iso-acetone in deionized water. Therefore, the surface tension of the isopropanone is smaller than the surface tension of the deionized water of the immersion wafer 38, so that the water molecules remaining on the surface of the wafer 38 are off. Surface of the wafer 38, is sucked into the ion water, 38 to achieve the efficacy of the wafer surface and dried.
上述習知之晶圓乾燥系統為目前業界所常用之晶圓乾燥系統，雖然因其構造簡單且應用原理易懂，而被普遍地使用，然而，其仍具有許多缺點：The above-mentioned conventional wafer drying system is a wafer drying system commonly used in the industry. Although it is generally used because of its simple structure and easy to understand application principle, it still has many disadvantages:
1.使用加熱裝置加熱異丙酮與氮氣之混合體，使其成為蒸氣狀態，雖可氣化異丙酮而有效地提升乾燥晶圓之效果，然而，加熱裝置之設備成本過高。1. A heating device is used to heat a mixture of isopropanone and nitrogen to form a vapor state, which can vaporize isopropanone to effectively enhance the effect of drying the wafer. However, the equipment cost of the heating device is too high.
2.異丙酮具有引火特性，故，加熱異丙酮係有安全上之疑慮。2. Isoamyl alcohol has a igniting property, so heating isopropanone has safety concerns.
因此，本案之發明人有鑑於上述習知之晶圓乾燥系統仍具有諸多之缺點，故極力加以研究發明，終於研發完成本發明之一種改良之基板乾燥系統及其乾燥基板之方法。Therefore, the inventors of the present invention have invented the invention in view of the above-mentioned conventional wafer drying system, and finally developed an improved substrate drying system and a method for drying the same according to the present invention.
本發明之主要目的，在於提供一種改良之基板乾燥系統，利用高頻振動裝置以霧化異丙酮，並藉由氣體流量控制裝置有效地控制霧化異丙酮進入基板容置槽之流量，且利用層流裝置可使得進入基板容置槽內之霧化異丙酮均勻分佈於基板表面，可有效地提升乾燥晶圓之效果，以達到同時降低設備成本與其運轉成本，並解決加熱異丙酮所需承擔安全上之問題。The main object of the present invention is to provide an improved substrate drying system, which utilizes a high frequency vibration device to atomize isopropanone, and effectively controls the flow rate of atomized isopropanone into the substrate receiving groove by the gas flow control device, and utilizes The laminar flow device can evenly distribute the atomized acetone in the substrate receiving groove to the surface of the substrate, thereby effectively improving the effect of drying the wafer, thereby reducing the equipment cost and the running cost, and solving the problem of heating the isopropanone. Security issues.
本發明之另一目的，在於提供一種改良之乾燥基板之方法，該方法可使用具有高頻振動裝置的改良基板乾燥系統，以有效地執行基板之乾燥流程。Another object of the present invention is to provide an improved method of drying a substrate which can use an improved substrate drying system having a high frequency vibration device to efficiently perform a drying process of the substrate.
本發明之再一目的，在於提供一種改良之乾燥基板之方法，該方法可使用具有高頻振動裝置的改良基板乾燥系統，並透過氣體流量控制裝置與層流裝置，以有效地執行基板之乾燥流程。Still another object of the present invention is to provide an improved method of drying a substrate which can use an improved substrate drying system having a high frequency vibration device and through a gas flow control device and a laminar flow device to efficiently perform drying of the substrate Process.
因此，為了達到上述主要目的之功效，本案發明人研發出一種改良之基板乾燥系統，其包括一基板容置槽；一第一液體容置槽；一高頻振動裝置；一第二液體注入裝置；一第一排放裝置；一第二排放裝置；一氣體輸入裝置；一氣體流量控制裝置；一層流裝置；及一有機氣體排放裝置。Therefore, in order to achieve the above-mentioned main purpose, the inventors of the present invention have developed an improved substrate drying system comprising a substrate receiving groove; a first liquid receiving groove; a high frequency vibration device; and a second liquid injection device a first discharge device; a second discharge device; a gas input device; a gas flow control device; a layer flow device; and an organic gas discharge device.
並且，為了達到上述另一目的所述之功效，本案發明人研發出一種改良之乾燥基板之方法，該方法包括：(1)將一基板置入一基板容置槽內；(2)將一第二液體注入該基板容置槽；(3)一高頻振動裝置產生高頻振動，以將一第一液體容置槽內之一第一液體，霧化成為一霧化第一液體；(4)將該霧化第一液體運送進入基板容置槽；(5)等待若干時間，使得霧化第一液體能夠均勻分佈於基板容置槽內；(6)利用一第一排放裝置與一第二排放裝置以排出第二液體；(7)利用一有機氣體排放裝置將基板容置槽內多餘之霧化第一液體排出；及(8)完成該基板之乾燥，將基板由基板容置槽內取出。Moreover, in order to achieve the above-mentioned other object, the inventors have developed an improved method for drying a substrate, the method comprising: (1) placing a substrate into a substrate receiving groove; (2) placing a a second liquid is injected into the substrate receiving groove; (3) a high frequency vibration device generates high frequency vibration to atomize a first liquid in the first liquid receiving groove into an atomized first liquid; 4) transporting the atomized first liquid into the substrate receiving groove; (5) waiting for a certain time, so that the atomized first liquid can be uniformly distributed in the substrate receiving groove; (6) using a first discharging device and a a second discharge device for discharging the second liquid; (7) discharging an excess atomized first liquid in the substrate receiving tank by using an organic gas discharge device; and (8) completing drying of the substrate to accommodate the substrate from the substrate Take out in the tank.
另外，為了達到上述再一目的所述之功效，本案發明人研發出一種改良之乾燥基板之方法，該方法包括：(10)將一基板置入一基板容置槽內；(20)將一第二液體注入該基板容置槽；(30)一高頻振動裝置產生高頻振動，以將一第一液體容置槽內之一第一液體，霧化成為一霧化第一液體；(40)將該霧化第一液體運送進入基板容置槽；(50)等待若干時間，使得霧化第一液體透過一層流裝置，而能夠均勻分佈於基板容置槽內；(60)利用一第一排放裝置與一第二排放裝置以排出第二液體；(70)利用一有機氣體排放裝置將基板容置槽內多餘之霧化第一液體排出；及(80)完成該基板之乾燥，將基板由基板容置槽內取出。In addition, in order to achieve the above-mentioned further object, the inventors have developed an improved method for drying a substrate, the method comprising: (10) placing a substrate into a substrate receiving groove; (20) a second liquid is injected into the substrate receiving groove; (30) a high frequency vibration device generates high frequency vibration to atomize a first liquid in the first liquid receiving groove into an atomized first liquid; 40) transporting the atomized first liquid into the substrate accommodating groove; (50) waiting for a plurality of times, so that the atomized first liquid passes through the layer flow device, and can be evenly distributed in the substrate accommodating groove; (60) utilizing one a first discharge device and a second discharge device for discharging the second liquid; (70) discharging an excess atomized first liquid in the substrate receiving tank by using an organic gas discharge device; and (80) completing drying of the substrate, The substrate is taken out from the substrate accommodating groove.
為了能夠更清楚地描述本發明之一種改良之基板乾燥系統及乾燥基板之方法，以下將配合圖示，詳盡說明之。In order to more clearly describe an improved substrate drying system and method of drying the substrate of the present invention, the following will be described in detail with reference to the drawings.
請參閱第二圖，係一種改良之基板乾燥系統之第一實施例架構圖，該改良之基板乾燥系統可應用於乾燥一基板2，其包括：一基板容置槽11，可將該基板2容置其中；一第一液體容置槽12，係裝設於該基板容置槽11之一第一側邊116，以容置一第一液體，該第一液體可為異丙醇(Isopropyl Alcohol，IPA)、甲醇、或乙醇，而於第一實施例中，係使用異丙醇以作為第一液體；一高頻振動裝置13，係設置於該第一液體容置槽12之內部，該高頻振動裝置13為一超音波產生器，故，高頻振動裝置13能夠以高頻振動之方式產生一高頻振波，利用該高頻振波可將該第一液體霧化成為一霧化第一液體，即成為霧化異丙酮，霧化異丙酮相較於蒸氣之異丙酮，係具有較大之異丙酮粒子，而能夠提高異丙酮與該基板2接觸之面積；一第二液體注入裝置14，係裝設於該基板容置槽11之一第二側邊117，透過該第二液體注入裝置14可輸入具有一適當溫度之一第二液體於基板容置槽11內，以浸泡該基板2，使得基板2保持中溫狀態；於該改良之基板乾燥系統1之第一實施例架中，該第二液體為去離子水(Deionization Water，DIW)，且其所具有之該適當溫度之範圍為25°～65℃；一第一排放裝置15，係裝設於該基板容置槽11之一第三側邊118，該第三側邊與基板容置槽11之該第一側邊116、及該第二側邊117為相鄰邊，該第一排放裝置15係用以緩慢地排放該第二液體；一第二排放裝置16，係裝設於該基板容置槽11之該第三側邊118，該第二排放裝置16係用以全速地排放該第二液體；一氣體輸入裝置17，係連接於該第一液體容置槽12，透過該氣體輸入裝置17可輸入一第一氣體於第一液體容置槽12，該第一氣體為一潔淨乾燥之氣體，於第一實施例之中，係選用氮氣作為第一氣體，利用氮氣可將該霧化第一液體運送入已注有該第二液體之該基板容置槽11內。由於該基板2係浸泡於具有該適當溫度之第二液體內，因此，保持中溫狀態之基板2，其與霧化第一液體間係具有一溫度差，該溫度差更增加了霧化第一液體與第二液體間表面張力值之差距，因此，當控制該第一排放裝置15與該第二排放裝置16之排放速率，而將第二液體從基板容置槽11內排放出去時，基板2表面之水分子受到霧化第一液體與第二液體之間的表面張力差之影響，而被拉入第二液體之內，達到了乾燥基板2表面之效果；及一有機氣體排放裝置18，係裝設於該基板容置槽11之該第二側邊117，該有機氣體排放裝置18可於該基板2乾燥完成之後，將該霧化第一液體以及該第一氣體排出基板容置槽11，以避免因為霧化第一液體與第一氣體於基板容置槽11內之濃度過高，而發生危險之情事。Please refer to the second figure, which is a structural diagram of a first embodiment of an improved substrate drying system, which can be applied to dry a substrate 2, which comprises: a substrate receiving groove 11 which can be used for the substrate 2 A first liquid accommodating groove 12 is disposed on a first side 116 of the substrate accommodating groove 11 to accommodate a first liquid, and the first liquid may be isopropyl alcohol (Isopropyl). Alcohol, IPA), methanol, or ethanol, and in the first embodiment, isopropyl alcohol is used as the first liquid; a high-frequency vibration device 13 is disposed inside the first liquid receiving tank 12, The high-frequency vibration device 13 is an ultrasonic generator, so that the high-frequency vibration device 13 can generate a high-frequency vibration wave by means of high-frequency vibration, and the first liquid can be atomized into an atomization first by using the high-frequency vibration wave. The liquid, that is, the atomized isopropanone, the atomized isopropanone has a larger acetone particle than the vapor, and can increase the area of the contact of the isopropanone with the substrate 2; a second liquid injection device 14 Mounted on the second side of one of the substrate receiving slots 11 The second liquid injecting device 14 can input a second liquid having a suitable temperature into the substrate receiving groove 11 to soak the substrate 2 so that the substrate 2 maintains a medium temperature state; the improved substrate is dried. In the first embodiment of the system 1, the second liquid is Deionization Water (DIW), and the appropriate temperature range is 25 ° to 65 ° C; a first discharge device 15 is The first side 116 of the substrate receiving groove 11 and the second side 117 are adjacent sides, and the third side is disposed on the third side 118 of the substrate receiving groove 11 A discharge device 15 is configured to slowly discharge the second liquid; a second discharge device 16 is mounted on the third side 118 of the substrate receiving groove 11, and the second discharge device 16 is used for full speed Discharge the second liquid; a gas input device 17 is connected to the first liquid receiving groove 12, and a first gas is input into the first liquid receiving groove 12 through the gas input device 17, the first gas For a clean and dry gas, in the first embodiment, nitrogen is selected as the first gas. The atomized first liquid can be carried into the substrate accommodating groove 11 into which the second liquid has been injected by using nitrogen gas. Since the substrate 2 is immersed in the second liquid having the appropriate temperature, the substrate 2 maintained in the intermediate temperature state has a temperature difference from the atomized first liquid, and the temperature difference further increases the atomization degree. a difference between the surface tension values of a liquid and the second liquid. Therefore, when the discharge rate of the first discharge device 15 and the second discharge device 16 is controlled to discharge the second liquid from the substrate receiving groove 11, The water molecules on the surface of the substrate 2 are affected by the difference in surface tension between the atomized first liquid and the second liquid, and are drawn into the second liquid to achieve the effect of drying the surface of the substrate 2; and an organic gas discharge device 18 is installed on the second side 117 of the substrate accommodating groove 11, and the organic gas discharge device 18 can discharge the atomized first liquid and the first gas out of the substrate after the substrate 2 is dried. The groove 11 is placed to avoid the danger that the concentration of the first liquid and the first gas in the substrate accommodating groove 11 is too high.
另外，該基板容置槽11更包括了：一第一偵測裝置113、一第二偵測裝置114、及一第三偵測裝置115。該第一偵測裝置113可為一氣體背壓式液位偵測器或者一光反射式液位偵測器，若第一偵測裝置113為該氣體背壓式液位偵測器，則裝設於該基板容置槽11之內部槽壁，若第一偵測裝置113為該氣體背壓式液位偵測器，則裝設於基板容置槽11之外部槽壁；而於本實施例之中，第一偵測裝置113為氣體背壓式液位偵測器，因此其被裝設於基板容置槽11之內部槽壁，當該第二液體被注入於基板容置槽11之時，透過第一偵測裝置113可偵測第二液體之一第一準位，以避免注入過多之第二液體。該第二偵測裝置114亦為氣體背壓式液位偵測器，因此，第二偵測裝置114係裝設於基板容置槽11之內部槽壁，且位於第一偵測裝置113之下方，當透過該第一排放裝置15緩慢地排放第二液體之時，第二偵測裝置114可偵測第二液體之一第二準位，而當第二液體於基板容置槽11內達到該第二準位之高度時，此時，即可停止運送該霧化第一液體進入基板容置槽11內。該第三偵測裝置115亦為氣體背壓式液位偵測器，因此，第三偵測裝置115係裝設於基板容置槽11之內部槽壁，且位於第二偵測裝置114之下方，當透過該第二排放裝置16高速地排放第二液體之時，第三偵測裝置115可偵測第二液體之一第三準位，而當第二液體於基板容置槽11內達到該第三準位之高度時，此時，即可關閉第一排放裝置15與該第二排放裝置16以停止排放第二液體。In addition, the substrate receiving slot 11 further includes: a first detecting device 113, a second detecting device 114, and a third detecting device 115. The first detecting device 113 can be a gas back pressure level detector or a light reflective liquid level detector. If the first detecting device 113 is the gas back pressure level detector, The first detection device 113 is the gas back pressure type liquid level detector, and is disposed on the outer groove wall of the substrate accommodating groove 11; In the embodiment, the first detecting device 113 is a gas back pressure type liquid level detector, so that it is installed in the inner groove wall of the substrate accommodating groove 11, and the second liquid is injected into the substrate accommodating groove. At 11 o'clock, the first detecting device 113 can detect the first level of the second liquid to avoid injecting too much second liquid. The second detecting device 114 is also a gas back pressure type liquid level detector. Therefore, the second detecting device 114 is mounted on the inner groove wall of the substrate receiving groove 11 and located at the first detecting device 113. In the following, when the second liquid is slowly discharged through the first discharge device 15, the second detecting device 114 can detect the second level of the second liquid, and when the second liquid is in the substrate receiving groove 11 When the height of the second level is reached, at this time, the transport of the atomized first liquid into the substrate receiving groove 11 can be stopped. The third detecting device 115 is also a gas back pressure type liquid level detector. Therefore, the third detecting device 115 is mounted on the inner groove wall of the substrate receiving groove 11 and located in the second detecting device 114. When the second liquid is discharged through the second discharge device 16 at a high speed, the third detecting device 115 can detect a third level of the second liquid, and when the second liquid is in the substrate receiving groove 11 When the height of the third level is reached, at this time, the first discharge device 15 and the second discharge device 16 can be closed to stop discharging the second liquid.
上述該改良之基板乾燥系統之第一實施例，係利用該超音波產生器以高頻振動之方式產生一高頻振波，利用該高頻振波將異丙酮(IPA)霧化，其取代了習知技術利用加熱異丙酮而使得異丙酮變成蒸氣之方法，因此，改良之基板乾燥系統不僅節省了加熱設備之成本其運轉成本(Running Cost)，亦同時解決了加熱異丙酮所需負擔之風險。並且，霧化異丙酮具有顆粒較大之霧狀粒子，因此加大了異丙酮與該基板2之接觸面積，再者，由於基板2被浸泡在具有該適當溫度(25℃～65℃)之去離子水之中，使得基板維持中溫狀態，因此，更拉大了霧化異丙酮與去離子水之間，表面張力之差距，而能夠有效地利用表面張力差以提升基板2之乾燥效果。In the first embodiment of the improved substrate drying system, the ultrasonic generator generates a high-frequency vibration wave by means of high-frequency vibration, and the high-frequency vibration wave is used to atomize the isopropanone (IPA), which replaces the conventional technology. The method of heating isopropanone to make isopropanone into a vapor is used. Therefore, the improved substrate drying system not only saves the cost of the heating equipment, but also the running cost, and at the same time solves the risk of the burden of heating the isopropanone. Further, the atomized isopropanone has atomized particles having a large particle size, so that the contact area of the isopropanone with the substrate 2 is increased, and further, since the substrate 2 is immersed at the appropriate temperature (25 ° C to 65 ° C) In the deionized water, the substrate is maintained at a medium temperature state, thereby widening the difference in surface tension between the atomized isopropanone and the deionized water, and the surface tension difference can be effectively utilized to enhance the drying effect of the substrate 2. .
另外，請參閱第三圖，係改良之基板乾燥系統之第二實施例之架構圖，該改良之基板乾燥系統1之第二實施例之大部分組成元件皆與第一實施例相同，然而，相較於第一實施例，於第二實施例之中，更包括：一氣體流量控制裝置112與一層流裝置111。該氣體流量控制裝置112係裝設於該基板容置槽11內部，且位於該第一液體容置槽12與基板容置槽11之連接處。氣體流量控制裝置112可為一單向流量控制閥或一操作流量控制閥，以控制該第一氣體所運送之該霧化第一液體進入基板容置槽11之流量，以避免瞬間注入過多的霧化第一液體，而導致基板容置槽11內之不安定狀態。該層流裝置111則裝設於基板容置槽11之內部，當該基板2被置入基板容置槽11之內時，該層流裝置111係位於基板2之上方。於第二實施例之中，層流裝置111為一具有複數個孔狀之板子，因此，當該第一氣體運送該霧化第一液體進入基板容置槽11內之後，霧化第一液體將透過層流裝置111，而能夠更加均勻地分佈於基板2之表面，而使得乾燥基板2之效果更加提升。且，除了具有複數個孔狀之板子的設計外，層流裝置111亦可被設計成為一個具有複數個噴嘴之裝置，其皆能夠使得霧化第一液體均勻地分佈於基板表面。In addition, referring to the third figure, which is a structural diagram of a second embodiment of the improved substrate drying system, most of the constituent elements of the second embodiment of the improved substrate drying system 1 are the same as the first embodiment, however, Compared with the first embodiment, in the second embodiment, a gas flow control device 112 and a layer flow device 111 are further included. The gas flow control device 112 is disposed inside the substrate accommodating groove 11 and located at a junction between the first liquid accommodating groove 12 and the substrate accommodating groove 11. The gas flow control device 112 can be a one-way flow control valve or an operation flow control valve to control the flow of the atomized first liquid carried by the first gas into the substrate accommodating groove 11 to avoid excessive injection. The first liquid is atomized, resulting in an unstable state in the substrate accommodating groove 11. The laminar flow device 111 is disposed inside the substrate accommodating groove 11. When the substrate 2 is placed in the substrate accommodating groove 11, the laminar flow device 111 is located above the substrate 2. In the second embodiment, the laminar flow device 111 is a plate having a plurality of holes. Therefore, after the first gas carries the atomized first liquid into the substrate receiving groove 11, the first liquid is atomized. The laminar flow device 111 can be more uniformly distributed on the surface of the substrate 2, so that the effect of drying the substrate 2 is further enhanced. Moreover, in addition to the design of a plurality of apertured plates, the laminar flow device 111 can also be designed as a device having a plurality of nozzles that are capable of uniformly distributing the atomized first liquid on the surface of the substrate.
因此，透過上述對於本發明之第一實施例與第二實施例之詳細說明，可以得知第二實施例對於基板2之乾燥效果係優於第一實施例，而這是因為第二實施例增加了氣體流量控制裝置112與層流裝置111之故，然而，於實施本發明之時，若實施人因為設備成本上之考量，而無法實施本發明之第二實施例之時，第一實施例仍為一個設備成本低廉，且具有良好乾燥效果之基板乾燥系統。Therefore, through the above detailed description of the first embodiment and the second embodiment of the present invention, it can be understood that the drying effect of the second embodiment for the substrate 2 is superior to that of the first embodiment, and this is because the second embodiment The gas flow control device 112 and the laminar flow device 111 are added. However, when implementing the present invention, if the implementer cannot implement the second embodiment of the present invention due to equipment cost considerations, the first implementation The example is still a substrate drying system which is inexpensive and has a good drying effect.
上述對於該改良之基板乾燥系統1的第一實施例與第二實施例，已作了相當完整之說明，然而，由於不同之基板乾燥系統會有不同的乾燥基本之方法，因此，第一實施例與第二實施例係分別有第一實施方法與第二實施方法，請參閱同時參閱第二圖與第四圖，其中，第四圖係一種改良之基板乾燥方法之第一實施方法流程圖，該改良之基板乾燥方法，係包括以下步驟：首先，執行步驟(401)，將一基板2置入一基板容置槽11內；接著，執行步驟(402)，將一第二液體注入該基板容置槽11；然後，執行步驟(403)，一高頻振動裝置13產生高頻振動，以將一第一液體容置槽12內之一第一液體，霧化成為一霧化第一液體；接著，執行步驟(404)，將該霧化第一液體運送進入基板容置槽11；然後，執行步驟(405)，等待若干時間，使得霧化第一液體能夠均勻分佈於基板容置槽11內；接著，執行步驟(406)，利用一第一排放裝置15與一第二排放裝置16以排出第二液體；完成步驟(406)之後，接著，執行步驟(407)，利用一有機氣體排放裝置18將基板容置槽11內多餘之霧化第一液體排出；以及，執行步驟(408)，完成該基板2之乾燥，將基板2由基板容置槽11內取出。於上述該改良之基板乾燥方法中，該第一液體為異丙醇，且，該第二液體為去離子水，而該高頻振動裝置13則為一超音波產生器，如此，藉由上述步驟(401)至步驟(408)，即可使用改良之基板乾燥系統1之第一實施例，以完成基板2之乾燥。The first embodiment and the second embodiment of the improved substrate drying system 1 have been described quite completely. However, since different substrate drying systems have different drying basic methods, the first implementation For example, the second embodiment and the second embodiment are respectively referred to, and the fourth figure is a flow chart of the first implementation method of the improved substrate drying method. The improved substrate drying method comprises the following steps: first, performing step (401), placing a substrate 2 into a substrate receiving groove 11; then, performing step (402), injecting a second liquid into the substrate The substrate accommodating groove 11; then, performing step (403), a high-frequency vibration device 13 generates high-frequency vibration to atomize a first liquid in a first liquid accommodating groove 12 into an atomization first Liquid; then, performing step (404), transporting the atomized first liquid into the substrate receiving groove 11; then, performing step (405), waiting for a number of times, so that the atomized first liquid can be uniformly distributed on the substrate Inside the slot 11; Step (406) is performed to utilize a first discharge device 15 and a second discharge device 16 to discharge the second liquid; after the step (406) is completed, then step (407) is performed to utilize an organic gas discharge device 18 The excess atomized first liquid in the substrate accommodating groove 11 is discharged; and the step (408) is performed to complete the drying of the substrate 2, and the substrate 2 is taken out from the substrate accommodating groove 11. In the above improved substrate drying method, the first liquid is isopropyl alcohol, and the second liquid is deionized water, and the high frequency vibration device 13 is an ultrasonic generator, and thus, by the above From step (401) to step (408), the first embodiment of the improved substrate drying system 1 can be used to complete the drying of the substrate 2.
然而，如上述該改良之基板乾燥方法，請再同時參閱第二圖與第五圖，其中，第五圖係步驟(402)之詳細步驟流程圖，步驟(402)更包括了以下詳細步驟：首先，執行步驟(4021)，一第二液體注入裝置14注入具有一適當溫度之該第二液體於該基板容置槽11內，其中，該適當溫度之範圍為25°～65℃；接著，執行步驟(4022)，一第一偵測裝置113判斷第二液體是否到達一第一準位，若是，則表示所注入之第二液體已經足夠，則執行步驟(4023)，該第二液體注入裝置停止第二液體之注入；若否，則重覆執行步驟(4021)，以持續注入第二液體，直到第二液體到達該第一準位為止。However, as described above, the improved substrate drying method, please refer to the second and fifth figures at the same time, wherein the fifth figure is a detailed step flow chart of the step (402), and the step (402) further comprises the following detailed steps: First, in step (4021), a second liquid injection device 14 injects the second liquid having a suitable temperature into the substrate receiving groove 11, wherein the appropriate temperature ranges from 25° to 65° C.; Step (4022), a first detecting device 113 determines whether the second liquid reaches a first level, and if so, indicating that the injected second liquid is sufficient, performing step (4023), the second liquid injection The device stops the injection of the second liquid; if not, repeats the step (4021) to continue injecting the second liquid until the second liquid reaches the first level.
另外，請參閱第二圖與第六圖，其中，第六圖係步驟(404)之詳細步驟流程圖，如上述該改良之基板乾燥方法，步驟(404)更包括了以下詳細步驟：首先，執行步驟(4041)，一氣體輸入裝置17輸入一第一氣體於該第一液體容置槽12內，其中，該第一氣體為潔淨乾燥之氮氣；以及，執行步驟(4042)，藉由第一氣體將該霧化第一液體運送進入該基板容置槽11內。In addition, please refer to the second and sixth figures, wherein the sixth figure is a detailed step flow chart of the step (404), as in the improved substrate drying method described above, the step (404) further comprises the following detailed steps: First, Step (4041), a gas input device 17 inputs a first gas into the first liquid receiving tank 12, wherein the first gas is clean and dry nitrogen; and, performing step (4042), by A gas transports the atomized first liquid into the substrate receiving groove 11.
請再同時參閱第二圖與第七圖，第七圖係步驟(406)之詳細步驟流程圖，其中，步驟(406)更包括了以下詳細步驟：首先，執行步驟(4061)，使用該第一排放裝置15緩慢地排放該第二液體；接著，執行步驟(4062)，一第二偵測裝置114判斷第二液體是否到達一第二準位，若是，則執行步驟(4063)，關閉該高頻振動裝置13與該氣體輸入裝置17，以停止運送該霧化後第一液體進入該基板容置槽11；若否，則重覆執行步驟(4061)，以繼續排放第二液體，直到第二液體達到該第二準位為止；步驟(4063)完成之後，接著，執行步驟(4064)，同時使用一第二排放裝置16以全速地排放第二液體；然後，執行步驟(4065)，一第三偵測裝置115判斷第二液體是否到達一第三準位，若是，則表示第二液體之排放量已達到方法預設之最低準位，因此可執行步驟(4066)，關閉該第一排放裝置15與該第二排放裝置16；於步驟(4065)中，若否，則重覆執行步驟(4064)，以繼續排放第二液體，直到第二液體達到方法預設之最低準位為止。Please refer to the second and seventh figures at the same time. The seventh figure is a detailed step flow chart of the step (406). The step (406) further includes the following detailed steps: First, the step (4061) is performed, and the first step is used. A discharge device 15 slowly discharges the second liquid; then, step (4062) is performed, a second detecting device 114 determines whether the second liquid reaches a second level, and if so, performs step (4063) to close the The high frequency vibrating device 13 and the gas input device 17 stop the transport of the atomized first liquid into the substrate receiving groove 11; if not, repeat the step (4061) to continue discharging the second liquid until the first After the second liquid reaches the second level; after the step (4063) is completed, then step (4064) is performed while using a second discharge device 16 to discharge the second liquid at full speed; then, performing step (4065), one The third detecting device 115 determines whether the second liquid reaches a third level. If yes, it indicates that the second liquid discharge amount has reached the minimum level preset by the method, so the step (4066) can be performed to close the first liquid. Discharge device 15 and the second discharge Apparatus 16; in step (4065), if no, repeating step (4064) to continue discharging the second liquid until the second liquid reaches a predetermined minimum level of the method.
另外，該改良之基板乾燥方法更包括第二實施方法，第二實施方法係針對上述該改良之基板乾燥系統1之第二實施例所設計的一種改良之乾燥基板方法，請參閱第八圖，係該改良之乾燥基板方法之第二實施方法流程圖，並同時參閱第三圖，第二實施方法係包括以下步驟：首先，執行步驟(801)，將一基板2置入一基板容置槽11內；接著，執行步驟(802)，將一第二液體注入該基板容置槽11；然後，執行步驟(803)，一高頻振動裝置13產生高頻振動，以將一第一液體容置槽12內之一第一液體，霧化成為一霧化第一液體；接著，執行步驟(804)，將該霧化第一液體運送進入基板容置槽11；然後，執行步驟(805)，等待若干時間，使得霧化第一液體透過一層流裝置111，而能夠更加地均勻分佈於基板容置槽11內；接著，執行步驟(806)，利用一第一排放裝置15與一第二排放裝置16以排出第二液體，於第二液體被排出的過程裡，由於霧化第一液體與第二液體間具有表面張力差，因此，該基板2表面之水分子將被拉入第二液體內，而被排出於基板容置槽11之外；完成步驟(806)之後，接著，執行步驟(807)，利用一有機氣體排放裝置18將基板容置槽11內多餘之霧化第一液體排出；以及，執行步驟(808)，完成基板2之乾燥，將基板2由基板容置槽11內取出。如此，藉由上述步驟(801)至步驟(808)，即可使用上述該改良之基板乾燥系統1之第二實施例，以完成基板2之乾燥。In addition, the improved substrate drying method further includes a second embodiment, and the second embodiment is an improved dry substrate method designed for the second embodiment of the improved substrate drying system 1, please refer to the eighth figure. The flow chart of the second embodiment of the improved dry substrate method, and referring to the third figure at the same time, the second embodiment comprises the following steps: First, step (801) is performed to place a substrate 2 into a substrate receiving groove. 11; then, performing step (802), injecting a second liquid into the substrate receiving groove 11; then, performing step (803), a high frequency vibration device 13 generates high frequency vibration to apply a first liquid volume One of the first liquids in the tank 12 is atomized to form an atomized first liquid; then, step (804) is performed to transport the atomized first liquid into the substrate receiving groove 11; then, step (805) is performed. Waiting for a certain time, so that the atomized first liquid passes through the laminar flow device 111, and can be more evenly distributed in the substrate accommodating groove 11; then, step (806) is performed, using a first discharge device 15 and a second Discharge device 16 The second liquid is discharged, and in the process of discharging the second liquid, since the atomization first liquid and the second liquid have a surface tension difference, water molecules on the surface of the substrate 2 are drawn into the second liquid, and After being discharged from the substrate accommodating groove 11; after the step (806) is completed, then step (807) is performed to discharge the excess atomized first liquid in the substrate accommodating groove 11 by using an organic gas discharge device 18; Step (808) is performed to complete the drying of the substrate 2, and the substrate 2 is taken out from the substrate accommodating groove 11. Thus, by the above steps (801) to (808), the second embodiment of the improved substrate drying system 1 described above can be used to complete the drying of the substrate 2.
且，相同於第一實施方法，該第一液體為異丙醇，該第二液體則為去離子水，該第一氣體為潔淨乾燥之氮氣，而該高頻振動裝置13為一超音波產生器。然而，不同於第一實施方法，於第二實施方法中，必須使用到該層流裝置111，其為一具有複數個孔狀之板子，該霧化第一液體將透過層流裝置111，而能夠更加均勻地分佈於該基板2之表面，而使得基板2之乾燥效果提升。And, in the same manner as the first embodiment, the first liquid is isopropyl alcohol, the second liquid is deionized water, the first gas is clean dry nitrogen, and the high frequency vibration device 13 is generated by an ultrasonic wave. Device. However, unlike the first embodiment, in the second embodiment, the laminar flow device 111 must be used, which is a plate having a plurality of holes, and the atomized first liquid will pass through the laminar flow device 111. It can be more evenly distributed on the surface of the substrate 2, so that the drying effect of the substrate 2 is improved.
另外，於上述該改良之基板乾燥方法之第二實施方法中，請參閱第三圖與第九圖，第九圖係步驟(802)之詳細步驟流程圖，其中，步驟(802)更包括以下詳細步驟：首先，執行步驟(8021)，一第二液體注入裝置14注入具有一適當溫度之該第二液體於該基板容置槽11內，該適當溫度之範圍為25°～65℃；接著，執行步驟(8022)，一第一偵測裝置113判斷第二液體是否到達一第一準位，若是，則執行步驟(8023)，該第二液體注入裝置14停止第二液體之注入；若否，則重覆執行步驟(8021)，直到第二液體之準位高度達到該第一準位為止。In addition, in the second implementation method of the improved substrate drying method, please refer to the third and ninth diagrams, and the ninth diagram is a detailed step flow chart of the step (802), wherein the step (802) further includes the following steps. Detailed steps: First, in step (8021), a second liquid injection device 14 injects the second liquid having a suitable temperature into the substrate receiving groove 11 at a suitable temperature ranging from 25° to 65° C.; Step (8022), a first detecting means 113 determines whether the second liquid reaches a first level, and if so, performing step (8023), the second liquid injecting means 14 stops the injection of the second liquid; Otherwise, the step (8021) is repeated until the level of the second liquid reaches the first level.
請繼續參閱第三圖與第十圖，第十圖係步驟(804)之詳細步驟流程圖，其中，步驟(804)更包括以下詳細步驟：首先，執行步驟(8041)，一氣體輸入裝置17輸入一第一氣體於該第一液體容置槽12內，該第一氣體為氮氣；接著，執行步驟(8042)，藉由該第一氣體將該霧化第一液體運送進入該基板容置槽11內；以及，執行步驟(8043)，啟動一氣體流量控制裝置112，以控制霧化第一液體進入基板容置槽11之流量。其中，該氣體流量控制裝置112可為一單向流量控制閥或一操作流量控制閥，然而，於第二實施方法中，氣體流量控制裝置112之功用係在於控制霧化第一液體進入基板容置槽11之流量，使其更有利於上述步驟(805)之執行。Please refer to the third and tenth figures. The tenth figure is a detailed step flow chart of the step (804). The step (804) further includes the following detailed steps: First, the step (8041) is performed, a gas input device 17 Inputting a first gas into the first liquid accommodating groove 12, the first gas is nitrogen; then, performing step (8042), the first gas is transported into the substrate by the first gas In the tank 11; and, in step (8043), a gas flow control device 112 is activated to control the flow rate of the atomized first liquid into the substrate receiving groove 11. The gas flow control device 112 can be a one-way flow control valve or an operation flow control valve. However, in the second embodiment, the function of the gas flow control device 112 is to control the atomization of the first liquid into the substrate. The flow rate of the slot 11 is made more advantageous for the execution of the above step (805).
請再參閱第十一圖，係步驟(806)之詳細步驟流程圖，於第二實施方法之中，步驟(806)更包括了以下之詳細步驟：首先，執行步驟(8061)，使用該第一排放裝置15緩慢地排放該第二液體；接著，執行步驟(8062)，一第二偵測裝置114判斷第二液體是否到達一第二準位，若是，則執行步驟(8063)，關閉該高頻振動裝置13、該氣體流量控制裝置112、與該氣體輸入裝置17，以停止運送該霧化後第一液體進入該基板容置槽11；若否，則重覆執行步驟(8061)，以持續排出第二液體，直到其準位到達該第二準位為止；接著，執行步驟(8064)，同時使用一第二排放裝置16以全速地排放第二液體；然後，執行步驟(8065)，一第三偵測裝置115判斷第二液體是否到達一第三準位，若是，則表示第二液體之準位已經到達該第三準位，即本方法所設計第二液體之最低準位，則可則執行步驟(8066)，關閉該第一排放裝置15與該第二排放裝置16；若否，則重覆執行步驟(8064)，以持續排出第二液體，直到其準位到達第三準位為止。Referring to FIG. 11 again, it is a detailed step flow chart of step (806). In the second implementation method, step (806) further includes the following detailed steps: First, step (8061) is performed, and the first step is performed. A discharge device 15 slowly discharges the second liquid; then, performing step (8062), a second detecting device 114 determines whether the second liquid reaches a second level, and if so, performs step (8063) to close the The high frequency vibration device 13, the gas flow control device 112, and the gas input device 17 stop the transport of the atomized first liquid into the substrate receiving groove 11; if not, repeat the step (8061) to Continuously discharging the second liquid until its level reaches the second level; then, performing step (8064) while using a second discharge device 16 to discharge the second liquid at full speed; then, performing step (8065), A third detecting device 115 determines whether the second liquid reaches a third level, and if so, it indicates that the level of the second liquid has reached the third level, that is, the lowest level of the second liquid designed by the method. Then, step (8066) can be performed, And closing the first discharge device 15 and the second discharge means 16; if not, then repeat step (8064) to continuously discharge the second liquid, until it reaches the level of the third level.
上述已經詳細且完整地揭露該改良之基板乾燥系統及其乾燥基板之方法，其中包括了第一實施例、第二實施例、第一實施方法、及第二實施方法，因此，綜合上述，本發明係具有下列之優點：The improved substrate drying system and method for drying the same have been disclosed in detail above, including the first embodiment, the second embodiment, the first embodiment method, and the second embodiment method. The invention has the following advantages:
1.本發明係利用高頻振動裝置產生高頻振動以霧化異丙酮，霧化異丙酮具有較大之霧狀粒子，可增加異丙酮與基板之接觸面積，而可提升乾燥基板表面之效果。1. The invention utilizes a high-frequency vibration device to generate high-frequency vibration to atomize the isopropanone, and the atomized iso-acetone has large mist-like particles, which can increase the contact area between the iso-acetone and the substrate, and can improve the effect of drying the surface of the substrate. .
2.相較於習知的晶圓乾燥系統，本發明使用高頻振動裝置替代加熱裝置，係降低加熱設備之成本與其運轉成本，亦同時解決了加熱異丙酮所需負擔之安全上之風險。2. Compared with the conventional wafer drying system, the present invention uses a high frequency vibration device instead of the heating device, which reduces the cost of the heating device and its running cost, and at the same time solves the safety risk of the burden of heating the isopropanone.
3.本發明使用氣體流量控制裝置，其可控制霧化第一液體其進入基板容置槽內之流量，以避免基板容置槽內之霧化第一液體濃度過高，而使得基板容置槽內產生不安定之狀態，另外，透過層流裝置可使得霧化第一液體均勻地分佈於基板之表面，更加地提升基板乾燥之效果。3. The present invention uses a gas flow control device that controls the flow rate of the atomized first liquid into the substrate receiving groove to prevent the atomized first liquid concentration in the substrate receiving groove from being too high, so that the substrate is accommodated. The unstable state is generated in the tank. In addition, the laminar flow device can uniformly distribute the atomized first liquid on the surface of the substrate, thereby further improving the drying effect of the substrate.
上述之詳細說明係針對本發明可行實施例之具體說明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離本發明技藝精神所為之等效實施或變更，均應包含於本案之專利範圍中。The detailed description of the present invention is intended to be illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention. In the scope of patents.
1．．．改良之基板乾燥系統1. . . Improved substrate drying system
11．．．基板容置槽11. . . Substrate receiving slot
111．．．層流裝置111. . . Laminar flow device
112．．．氣體流量控制裝置112. . . Gas flow control device
113．．．第一偵測裝置113. . . First detecting device
114．．．第二偵測裝置114. . . Second detecting device
115．．．第三偵測裝置115. . . Third detecting device
116．．．第一側邊116. . . First side
117．．．第二側邊117. . . Second side
118．．．第三側邊118. . . Third side
12．．．第一液體容置槽12. . . First liquid receiving groove
13．．．高頻振動裝置13. . . High frequency vibration device
14．．．第二液體注入裝置14. . . Second liquid injection device
15．．．第一排放裝置15. . . First discharge device
16．．．第二排放裝置16. . . Second discharge device
17．．．氣體輸入裝置17. . . Gas input device
18．．．有機氣體排放裝置18. . . Organic gas discharge device
2．．．基板2. . . Substrate
3．．．習知之晶圓乾燥系統3. . . Conventional wafer drying system
31．．．乾燥槽31. . . Drying tank
32．．．異丙醇儲存槽32. . . Isopropyl alcohol storage tank
33．．．去離子水注入裝置33. . . Deionized water injection device
34．．．排水裝置34. . . Drainage device
35．．．氮氣輸入裝置35. . . Nitrogen input device
36．．．輸送管36. . . Duct
37．．．加熱裝置37. . . heating equipment
38．．．晶圓38. . . Wafer
401～408．．．方法步驟401~408. . . Method step
4021～4023．．．方法步驟4021～4023. . . Method step
4041～4042．．．方法步驟4041～4042. . . Method step
4061～4066．．．方法步驟4061～4066. . . Method step
801～808．．．方法步驟801～808. . . Method step
8021～8023．．．方法步驟8021～8023. . . Method step
8041～8043．．．方法步驟8041～8043. . . Method step
8061～8066．．．方法步驟8061～8066. . . Method step
第一圖 係習知之晶圓乾燥系統；The first picture is a conventional wafer drying system;
第二圖 係一種改良之基板乾燥系統之第一實施例架構圖；The second figure is an architectural diagram of a first embodiment of an improved substrate drying system;
第三圖 係改良之基板乾燥系統之第二實施例之架構圖；The third diagram is an architectural diagram of a second embodiment of the improved substrate drying system;
第四圖 係一種改良之乾燥基板方法之第一實施方法流程圖；Figure 4 is a flow chart showing a first embodiment of an improved dry substrate method;
第五圖 係步驟(402)之詳細步驟流程圖；The fifth figure is a detailed step flow chart of step (402);
第六圖 係步驟(404)之詳細步驟流程圖Figure 6 is a detailed step flow chart of step (404)
第七圖 係步驟(406)之詳細步驟流程圖；The seventh figure is a detailed step flow chart of step (406);
第八圖 係改良之乾燥基板方法之第二實施方法流程圖；Figure 8 is a flow chart showing a second embodiment of the improved dry substrate method;
第九圖 係步驟(802)之詳細步驟流程圖；The ninth diagram is a detailed step flow chart of the step (802);
第十圖 係步驟(804)之詳細步驟流程圖；及The tenth figure is a detailed step flow chart of step (804); and
第十一圖 係步驟(806)之詳細步驟流程圖。The eleventh figure is a detailed step flow chart of step (806).
1．．．改良之基板乾燥系統1. . . Improved substrate drying system
11．．．基板容置槽11. . . Substrate receiving slot
111．．．層流裝置111. . . Laminar flow device
112．．．氣體流量控制裝置112. . . Gas flow control device
113．．．第一偵測裝置113. . . First detecting device
114．．．第二偵測裝置114. . . Second detecting device
115．．．第三偵測裝置115. . . Third detecting device
116．．．第一側邊116. . . First side
117．．．第二側邊117. . . Second side
118．．．第三側邊118. . . Third side
12．．．第一液體容置槽12. . . First liquid receiving tank
13．．．高頻振動裝置13. . . High frequency vibration device
14．．．第二液體注入裝置14. . . Second liquid injection device
15．．．第一排放裝置15. . . First discharge device
16．．．第二排放裝置16. . . Second discharge device
17．．．氣體輸入裝置17. . . Gas input device
18．．．有機氣體排放裝置18. . . Organic gas discharge device
2．．．基板2. . . Substrate
Claims (48)
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| Application Number | Priority Date | Filing Date | Title |
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| TW98135554A TWI392046B (en) | 2009-10-21 | 2009-10-21 | Improved substrate drying system and improved method for drying substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| TW98135554A TWI392046B (en) | 2009-10-21 | 2009-10-21 | Improved substrate drying system and improved method for drying substrate |
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| TW201115670A TW201115670A (en) | 2011-05-01 |
| TWI392046B true TWI392046B (en) | 2013-04-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI616970B (en) * | 2015-06-18 | 2018-03-01 | 思可林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
| TWI666698B (en) * | 2016-09-26 | 2019-07-21 | 日商斯庫林集團股份有限公司 | Substrate treating method and substrate treating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11508588B2 (en) * | 2017-05-24 | 2022-11-22 | Tokyo Electron Limited | Substrate treatment device and substrate treatment method |
| CN111312581B (en) * | 2020-02-27 | 2022-07-15 | 至微半导体(上海)有限公司 | Exhaust method capable of improving wafer drying efficiency |
| CN111312580B (en) * | 2020-02-27 | 2022-07-15 | 至微半导体(上海)有限公司 | Micro-amplitude vibration method for high aspect ratio graphic wafer |
| CN111211043B (en) * | 2020-02-27 | 2022-10-18 | 至微半导体(上海)有限公司 | Drying method for improving wafer drying efficiency |
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| US6158596A (en) * | 1998-02-24 | 2000-12-12 | Tokyo Electron Limited | Substrate holder, and system and method for cleaning and drying same |
| US6655042B2 (en) * | 2001-12-11 | 2003-12-02 | Samsung Electronics Co., Ltd. | System and method for drying semiconductor substrate |
| JP2005142558A (en) * | 2003-10-28 | 2005-06-02 | Samsung Electronics Co Ltd | System of cleaning and drying semiconductor substrate, and method of cleaning and drying utilizing it |
| JP2006204997A (en) * | 2005-01-26 | 2006-08-10 | Seiko Epson Corp | Substrate drying device, substrate processing system equipped with it, and manufacturing method of electro-optical apparatus, electro-optical apparatus and electronic component |
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| US6158596A (en) * | 1998-02-24 | 2000-12-12 | Tokyo Electron Limited | Substrate holder, and system and method for cleaning and drying same |
| US6655042B2 (en) * | 2001-12-11 | 2003-12-02 | Samsung Electronics Co., Ltd. | System and method for drying semiconductor substrate |
| JP2005142558A (en) * | 2003-10-28 | 2005-06-02 | Samsung Electronics Co Ltd | System of cleaning and drying semiconductor substrate, and method of cleaning and drying utilizing it |
| US7383601B2 (en) * | 2004-03-31 | 2008-06-10 | Lam Research Corporation | Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same |
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| TWI616970B (en) * | 2015-06-18 | 2018-03-01 | 思可林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
| TWI666698B (en) * | 2016-09-26 | 2019-07-21 | 日商斯庫林集團股份有限公司 | Substrate treating method and substrate treating device |
| US10651060B2 (en) | 2016-09-26 | 2020-05-12 | SCREEN Holdings Co., Ltd. | Substrate treating method and substrate treating device |
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| TW201115670A (en) | 2011-05-01 |
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