TWI836980B - Asymmetric half-bridge flyback converter power supply and its control chip and control method - Google Patents
Asymmetric half-bridge flyback converter power supply and its control chip and control method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000005347 demagnetization Effects 0.000 claims abstract description 125
- 230000005284 excitation Effects 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 238000004804 winding Methods 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 claims description 75
- 230000001052 transient effect Effects 0.000 claims description 41
- 238000005070 sampling Methods 0.000 claims description 23
- 230000001939 inductive effect Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 24
- 230000007423 decrease Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 4
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 4
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 4
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/01—Resonant DC/DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33571—Half-bridge at primary side of an isolation transformer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Dc-Dc Converters (AREA)
Abstract
提供了一種非對稱半橋返馳式變換器電源及其控制晶片和控制方法。非對稱半橋返馳式變換器電源包括第一功率開關、第二功率開關、諧振電容、變壓器,該變壓器的一次側勵磁電感包括一次側電感和一次側漏感,該控制晶片被配置為:基於表徵非對稱半橋返馳式變換器電源的輸出電壓的輸出回饋信號和表徵流過一次側電感的電流的電流感測信號,生成用於控制第一功率開關的導通與關斷的上管控制信號;以及基於輸出回饋信號和表徵變壓器的輔助繞組上的電壓的電壓感測信號,生成用於控制第二功率開關的導通與關斷的下管控制信號,其中,控制晶片被配置為基於輸出回饋信號和電壓感測信號識別變壓器的一次側勵磁電感退磁結束的時刻,並且基於該時刻來生成下管控制信號。 An asymmetric half-bridge flyback converter power supply, a control chip and a control method thereof are provided. The asymmetric half-bridge flyback converter power supply includes a first power switch, a second power switch, a resonant capacitor, and a transformer. The primary side excitation inductance of the transformer includes a primary side inductance and a primary side leakage inductance. The control chip is configured as : Based on the output feedback signal characterizing the output voltage of the asymmetric half-bridge flyback converter power supply and the current sensing signal characterizing the current flowing through the primary side inductor, an upper signal for controlling the turn-on and turn-off of the first power switch is generated. tube control signal; and based on the output feedback signal and the voltage sensing signal representing the voltage on the auxiliary winding of the transformer, generate a lower tube control signal for controlling the turn-on and turn-off of the second power switch, wherein the control chip is configured as The moment when demagnetization of the primary side excitation inductor of the transformer ends is identified based on the output feedback signal and the voltage sensing signal, and a down-tube control signal is generated based on the moment.
Description
本發明涉及電路領域,更具體地涉及一種非對稱半橋返馳式變換器電源及其控制晶片和控制方法。 The present invention relates to the field of circuits, and more specifically to an asymmetric half-bridge flyback converter power supply and its control chip and control method.
開關電源又稱交換式電源、開關變換器,是電源供應器的一種。開關電源的功能是通過不同形式的架構(例如,返馳(fly-back)架構、降壓(BUCK)架構、或升壓(BOOST)架構等)將一個位準的電壓轉換為使用者端所需要的電壓或電流。 A switching power supply, also known as an alternating current power supply or a switching converter, is a type of power supply. The function of a switching power supply is to convert a voltage level into the voltage or current required by the user through different forms of architecture (for example, fly-back architecture, buck architecture, or boost architecture, etc.).
本發明的一方面提供了一種用於非對稱半橋返馳式變換器電源的控制晶片。非對稱半橋返馳式變換器電源包括第一功率開關、第二功率開關、諧振電容、變壓器,該變壓器的一次側勵磁電感包括一次側電感和一次側漏感。該控制晶片被配置為:基於表徵非對稱半橋返馳式變換器電源的輸出電壓的輸出回饋信號和表徵流過一次側電感的電流的電流感測信號,生成用於控制第一功率開關的導通與關斷的上管控制信號;以及基於輸出回饋信號和表徵變壓器的輔助繞組上的電壓的電壓感測信號,生成用於控制第二功率開關的導通與關斷的下管控制信號,其中,控制晶片被配置為基於輸出回饋信號和電壓感測信號識別變壓器的一次側勵磁電感退磁結束的時刻,並且基於該時刻來生成下管控制信號。 One aspect of the present invention provides a control chip for an asymmetric half-bridge flyback converter power supply. The asymmetric half-bridge flyback converter power supply includes a first power switch, a second power switch, a resonant capacitor, and a transformer, wherein the primary magnetizing inductor of the transformer includes a primary inductor and a primary leakage inductor. The control chip is configured to: generate an upper tube control signal for controlling the on and off of a first power switch based on an output feedback signal representing the output voltage of an asymmetric half-bridge flyback converter power supply and an inductive sensing signal representing the current flowing through a primary inductor; and generate a lower tube control signal for controlling the on and off of a second power switch based on the output feedback signal and a voltage sensing signal representing the voltage on an auxiliary winding of the transformer, wherein the control chip is configured to identify the moment when the demagnetization of the primary magnetizing inductor of the transformer is completed based on the output feedback signal and the voltage sensing signal, and generate the lower tube control signal based on the moment.
本發明的另一方面提供了一種用於非對稱半橋返馳式變換器電源的控制方法。非對稱半橋返馳式變換器電源包括第一功率開關、第二功率開關、諧振電容、變壓器,該變壓器的一次側勵磁電 感包括一次側電感和一次側漏感。該控制方法包括基於表徵非對稱半橋返馳式變換器電源的輸出電壓的輸出回饋信號和表徵流過一次側電感的電流的電流感測信號,生成用於控制第一功率開關的導通與關斷的上管控制信號;以及基於輸出回饋信號和表徵變壓器的輔助繞組上的電壓的電壓感測信號,生成用於控制第二功率開關的導通與關斷的下管控制信號,其中,控制晶片被配置為基於輸出回饋信號和電壓感測信號識別變壓器的一次側勵磁電感退磁結束的時刻,並且基於該時刻來生成下管控制信號。 Another aspect of the present invention provides a control method for an asymmetric half-bridge flyback converter power supply. The asymmetric half-bridge flyback converter power supply includes a first power switch, a second power switch, a resonant capacitor, and a transformer, wherein the primary magnetizing inductance of the transformer includes a primary inductance and a primary leakage inductance. The control method includes generating an upper tube control signal for controlling the on and off of a first power switch based on an output feedback signal representing an output voltage of an asymmetric half-bridge flyback converter power supply and an inductive sensing signal representing a current flowing through a primary inductor; and generating a lower tube control signal for controlling the on and off of a second power switch based on the output feedback signal and a voltage sensing signal representing a voltage on an auxiliary winding of the transformer, wherein the control chip is configured to identify the moment when the demagnetization of the primary magnetizing inductor of the transformer is completed based on the output feedback signal and the voltage sensing signal, and generate the lower tube control signal based on the moment.
本發明的再一方面提供了一種使用上述控制晶片或控制方法的非對稱半橋返馳式變換器電源。 Another aspect of the present invention provides an asymmetric half-bridge flyback converter power supply using the above-mentioned control chip or control method.
0A,t0,t1,t2,t3,t4,t5,t6,t7:時刻 0A,t0,t1,t2,t3,t4,t5,t6,t7: time
100:非對稱半橋返馳式變換器電源 100: Asymmetric half-bridge flyback converter power supply
400:控制晶片 400: Control chip
401:比較器 401: Comparator
402:死區時間控制單元 402: Dead time control unit
403:第一邏輯控制單元(Logic1) 403: First logical control unit (Logic1)
404:頻率控制單元 404: Frequency control unit
405:退磁(Demagnetization,DEM)檢測單元 405: Demagnetization (DEM) detection unit
405-1,405-1’:採樣模組 405-1, 405-1’: Sampling module
405-2:壓控電流源 405-2: Voltage-controlled current source
405-2’:第一壓控電流源 405-2’: The first voltage-controlled current source
405-3:比較模組 405-3: Compare Modules
405-3’:第二壓控電流源 405-3’: Second voltage-controlled current source
405-4’:運算模組 405-4’: Computation module
405-5’:比較模組 405-5’: Compare modules
406:零電壓導通(Zero Voltage Switching,ZVS)控制單元 406: Zero Voltage Switching (ZVS) control unit
407:第二邏輯控制單元 407: Second logic control unit
ADJ:外部調整信號 ADJ: External adjustment signal
C1,C2,C3:電容器 C1,C2,C3:Capacitors
Cr:諧振電容 Cr: resonant capacitor
CV_off:上管關斷控制信號 CV_off: upper tube shutdown control signal
DCM_on:頻率控制信號 DCM_on: frequency control signal
DEM_off:退磁檢測信號 DEM_off: Demagnetization detection signal
down_on:下管導通控制信號 down_on: down tube conduction control signal
FB:輸出回饋信號 FB: Output feedback signal
Gate_down:下管控制信號 Gate_down: down tube control signal
Gate_up:上管控制信號 Gate_up: Upper tube control signal
HB:第一功率開關Q1和第二功率開關Q2之間的中間點 HB: the midpoint between the first power switch Q1 and the second power switch Q2
I1,I2,I3:電流 I1,I2,I3: current
IDo:二次側電流 I Do : Secondary current
ILm:一次側勵磁電流 I Lm : primary side excitation current
ILr:一次側諧振電流 I Lr : primary side resonant current
INV:電壓感測信號 INV: voltage sensing signal
Io:負載輸出電流 Io: load output current
Ip:峰值電流 IP: peak current
k1,k2,k3:係數 k1,k2,k3: coefficients
Lm:一次側勵磁電感 Lm: primary side magnetic inductance
Lp:一次側電感 Lp: primary side inductance
Lr:一次側漏感 Lr: primary side leakage sense
Ls:二次側電感 Ls: secondary side inductance
Naux,Np,Ns:線圈匝數 Naux, Np , Ns : Number of coil turns
NVo:退磁電壓 NVo: demagnetization voltage
Q1:第一功率開關 Q1: First power switch
Q2:第二功率開關 Q2: Second power switch
R1,R2:分壓電阻 R1, R2: voltage divider resistors
Rcs:電流感測電阻 Rcs: Inductive flow measurement resistance
S0,S1,S2,S3,S4,S5:開關 S0,S1,S2,S3,S4,S5: switch
T:變壓器 T: Transformer
Tdem,Ton,TZVS:時長 T dem ,T on ,T ZVS : duration
TL431:穩壓管 TL431: Voltage regulator
up_on:上管導通控制信號 up_on: upper tube conduction control signal
V1:採樣電壓 V1: sampling voltage
V2:第一採樣電壓 V2: first sampling voltage
V3:第二採樣電壓 V3: Second sampling voltage
Vaux:輔助繞組電壓 Vaux: auxiliary winding voltage
VC1,VC3:受控信號(電壓) VC1 , VC3 : controlled signal (voltage)
VC2,VFB_2:電壓 V C2 , V FB_2 : voltage
Vcs:電流感測信號 Vcs: current sensing signal
VHB:第一功率開關Q1和第二功率開關Q2之間的中間點HB處的電壓(HB電壓) V HB : The voltage at the midpoint HB between the first power switch Q1 and the second power switch Q2 (HB voltage)
Vin:非對稱半橋返馳式變換器電源100的輸入電壓(直流輸入電壓) Vin: Input voltage of asymmetric half-bridge flyback converter power supply 100 (DC input voltage)
Vo:非對稱半橋返馳式變換器電源100的輸出電壓
Vo: the output voltage of the asymmetric half-bridge flyback
ZVS_off:下管關斷控制信號 ZVS_off: Lower tube shutdown control signal
從下面結合圖式對本發明的具體實施方式的描述中可以更好地理解本發明。圖式不是按比例繪製的,其中可以省略公知的結構或部分。 The present invention can be better understood from the following description of specific embodiments of the invention in conjunction with the drawings. The drawings are not to scale and well-known structures or portions may be omitted.
圖1示出了根據本發明實施例的非對稱半橋返馳式變換器電源的拓撲結構示意圖。 Figure 1 shows a schematic diagram of the topology of an asymmetric half-bridge flyback converter power supply according to an embodiment of the present invention.
圖2示出了圖1所示的非對稱半橋返馳式變換器電源在臨界導通模式(Critical Current Mode,CRM)下的多個信號的工作波形圖。 FIG2 shows the operating waveforms of multiple signals of the asymmetric half-bridge flyback converter power supply shown in FIG1 in the critical current mode (CRM).
圖3示出了圖1所示的非對稱半橋返馳式變換器電源在非連續導通模式(Discontinuous Conduction Mode,DCM)下的多個信號的工作波形圖。 Figure 3 shows the operating waveform diagram of multiple signals of the asymmetric half-bridge flyback converter power supply shown in Figure 1 in discontinuous conduction mode (Discontinuous Conduction Mode, DCM).
圖4示出了根據本發明實施例的用於非對稱半橋返馳式變換器電源的控制晶片的電路原理圖。 FIG4 shows a circuit schematic diagram of a control chip for an asymmetric half-bridge flyback converter power supply according to an embodiment of the present invention.
圖5示出了採用圖4所示的控制晶片的非對稱半橋返馳式變換器電源在臨界導通模式下工作時的多個信號的工作波形圖。 FIG. 5 shows the operating waveform diagrams of multiple signals when the asymmetric half-bridge flyback converter power supply using the control chip shown in FIG. 4 operates in critical conduction mode.
圖6示出了採用圖4所示的控制晶片的非對稱半橋返馳式變換器電源在非連續導通模式下工作時的多個信號的工作波形圖。 FIG6 shows the operating waveforms of multiple signals when the asymmetric half-bridge flyback converter power supply using the control chip shown in FIG4 operates in a discontinuous conduction mode.
圖7示出了圖4所示的控制晶片中的退磁檢測單元的一種示例實現的電路原理圖。 FIG. 7 shows a circuit schematic diagram of an example implementation of the demagnetization detection unit in the control chip shown in FIG. 4 .
圖8示出了圖4所示的控制晶片中的退磁檢測單元的另一種示例實現的電路原理圖。 FIG. 8 shows a circuit schematic diagram of another example implementation of the demagnetization detection unit in the control chip shown in FIG. 4 .
下面將詳細描述本發明的各個方面的特徵和示例性實施例。在下面的詳細描述中,提出了許多具體細節,以便提供對本發明的透徹理解。但是,對於本領域技術人員來說很明顯的是,本發明可以在不需要這些具體細節中的一些細節的情況下實施。下面對實施例的描述僅僅是為了通過示出本發明的示例來提供對本發明的更好的理解。本發明決不限於下面所提出的任何具體配置和演算法,而是在不脫離本發明的精神的前提下覆蓋了元素、部件和演算法的任何修改、替換和改進。在圖式和下面的描述中,沒有示出公知的結構和技術,以便避免對本發明造成不必要的模糊。 Features and exemplary embodiments of various aspects of the invention are described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the invention by illustrating examples of the invention. The present invention is in no way limited to any specific configurations and algorithms set forth below, but covers any modifications, substitutions and improvements of elements, components and algorithms without departing from the spirit of the invention. In the drawings and the following description, well-known structures and techniques are not shown in order to avoid unnecessarily obscuring the present invention.
圖1示出了根據本發明實施例的非對稱半橋返馳式變換器電源100的拓撲結構示意圖。如圖1所示,在非對稱半橋返馳式變換器電源100中,第一功率開關Q1和第二功率開關Q2均為金屬氧化物半導體場效應電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET),通過諧振電容Cr和變壓器T的一次側電感Lp、一次側漏感Lr的諧振可以實現第一功率開關Q1和第二功率開關Q2的零電壓導通。本發明中將變壓器T的一次側電感Lp和一次側漏感Lr之和稱為變壓器T的一次側勵磁電感Lm,變壓器T的二次側電感用Ls表示。
FIG1 shows a schematic diagram of the topological structure of an asymmetric half-bridge flyback
圖2示出了圖1所示的非對稱半橋返馳式變換器電源100在臨界導通模式(CRM)下的多個信號的工作波形圖。在圖2中,Gate_up表示用於控制第一功率開關Q1的導通與關斷的上管控制信號,Gate_down表示用於控制第二功率開關Q2的導通與關斷的下管
控制信號,ILr表示變壓器T的一次側諧振電流(簡稱一次側諧振電流),ILm表示變壓器T的一次側勵磁電流(簡稱一次側勵磁電流),IDo表示流過變壓器T的二次側電感Ls的電流(簡稱二次側電流),VHB表示第一功率開關Q1和第二功率開關Q2之間的中間點HB處的電壓(簡稱HB電壓)。
FIG. 2 shows operating waveform diagrams of multiple signals of the asymmetric half-bridge flyback
結合圖1和圖2所示,在t0時刻,第一功率開關Q1從關斷狀態變為導通狀態,非對稱半橋返馳式變換器電源100的輸入電壓(即,直流輸入電壓)Vin通過諧振電容Cr給變壓器T的一次側勵磁電感Lm(包括一次側電感Lp和一次側漏感Lr)充電,一次側諧振電流ILr正向增大;在t1時刻,第一功率開關Q1從導通狀態變為關斷狀態,輸入電壓Vin給變壓器T的一次側勵磁電感Lm充電的回路斷開,由於電感中的電流無法突變,一次側諧振電流ILr給第二功率開關Q2的寄生電容放電、第一功率開關Q1的寄生電容充電,HB電壓下降;在t2時刻,HB電壓下降至0V,第二功率開關Q2的體二極體從關斷狀態變為導通狀態,第二功率開關Q2實現零電壓導通,之後諧振電容Cr和變壓器T的一次側漏感Lr諧振,變壓器一次側諧振電流ILr下降至0A後負向增大,同時變壓器T的二次側電感Ls退磁,一次側勵磁電流ILm線性減小;在t3時刻,一次側勵磁電流ILm減小到0A,一次側諧振電流ILr仍然為負電流,因此諧振繼續;在t4時刻,一次側諧振電流ILr諧振至和一次側勵磁電流ILm一樣大,變壓器二次側退磁結束,IDo回到0A,之後諧振電容Cr通過第二功率開關Q2對變壓器T的一次側勵磁電感Lm放電,一次側諧振電流ILr負向增大;在t5時刻,第二功率開關Q2從導通狀態變為關斷狀態,諧振電容Cr對變壓器T的一次側勵磁電感Lm放電的回路斷開,由於電感中的電流無法突變,變壓器一次側諧振電流ILr給第一功率開關Q1的寄生電容放電、第二功率開關Q2的寄生電容充電,HB電壓上升(若負向的一次側諧振電流ILr足夠大,HB電壓將上升直至輸入
電壓Vin);在t6時刻,HB電壓上升至輸入電壓Vin,第一功率開關Q1的體二極體從關斷狀態變為導通狀態,第一功率開關Q1實現零電壓導通。
As shown in FIG. 1 and FIG. 2 , at time t0, the first power switch Q1 changes from the off state to the on state, and the input voltage (i.e., the DC input voltage) Vin of the asymmetric half-bridge flyback
圖3示出了圖1所示的非對稱半橋返馳式變換器電源100在非連續導通模式(DCM)下的多個信號的工作波形圖。在圖3中,Gate_up表示用於控制第一功率開關Q1的導通與關斷的上管控制信號,Gate_down表示用於控制第二功率開關Q2的導通與關斷的下管控制信號,ILr表示變壓器T的一次側諧振電流(簡稱一次側諧振電流),ILm表示變壓器T的一次側勵磁電流(簡稱一次側勵磁電流),IDo表示流過變壓器T的二次側電感Ls的電流(簡稱二次側電流),VHB表示第一功率開關Q1和第二功率開關Q2之間的中間點HB處的電壓(簡稱HB電壓)。
FIG. 3 shows operating waveforms of multiple signals of the asymmetric half-bridge flyback
結合圖1和圖3所示,在t0時刻,第一功率開關Q1從關斷狀態變為導通狀態,非對稱半橋返馳式變換器電源100的輸入電壓(即,直流輸入電壓)Vin通過諧振電容Cr給變壓器T的一次側勵磁電感Lm(包括一次側電感Lp和一次側漏感Lr)充電,一次側諧振電流ILr正向增大;在t1時刻,第一功率開關Q1從導通狀態變為關斷狀態,輸入電壓Vin給變壓器T的一次側勵磁電感Lm充電的回路斷開,由於電感中的電流無法突變,正向的一次側諧振電流ILr給第二功率開關Q2的寄生電容放電、第一功率開關Q1的寄生電容充電,HB電壓下降;在t2時刻,HB電壓下降至0V,第二功率開關Q2的體二極體從關斷狀態變為導通狀態,第二功率開關Q2實現零電壓導通,之後諧振電容Cr和變壓器T的一次側漏感Lr諧振,一次側諧振電流ILr下降至0A後負向增大,同時變壓器T的二次側電感Ls退磁,一次側勵磁電流ILm線性減小;在t3時刻,一次側勵磁電流ILm減小到0A,一次側諧振電流ILr仍然為負電流,因此諧振繼續;在t4時刻,第二功率開關Q2從導通狀態變為關斷狀態,變壓器T的諧
振電容Cr和一次側漏感Lr的諧振回路斷開,但是一次側諧振電流ILr仍為負電流,所以第一功率開關Q1的體二極體將能量返回輸入電壓Vin,之後第一功率開關Q1和第二功率開關Q2的寄生電容和一次側勵磁電感Lm進行諧振;在t5時刻,第二功率開關Q2再次從關斷狀態變為導通狀態,諧振電容Cr通過第二功率開關Q2對變壓器T的一次側勵磁電感Lm放電,使得一次側諧振電流ILr負向增大;在t6時刻,第二功率開關Q2再次從導通狀態變為關斷狀態,諧振電容Cr對變壓器T的一次側勵磁電感Lm放電的回路斷開,變壓器T的一次側勵磁電感Lm和第一功率開關Q1和第二功率開關Q2的寄生電容諧振,由於一次側勵磁電感Lm中的電流無法突變,負向的一次側諧振電流ILr給第一功率開關Q1的寄生電容放電、第二功率開關Q2的寄生電容充電,HB電壓上升(若負向的一次側諧振電流ILr足夠大,HB電壓將上升直至輸入電壓Vin);在t7時刻,HB電壓上升至輸入電壓Vin,第一功率開關Q1的體二極體從關斷狀態變為導通狀態,第一功率開關Q1實現零電壓導通。
As shown in FIG. 1 and FIG. 3 , at time t0, the first power switch Q1 changes from the off state to the on state, and the input voltage (ie, DC input voltage) Vin of the asymmetric half-bridge flyback
在如圖2所示的臨界導通模式中,在第二功率開關Q2關斷後、第一功率開關Q1導通前,即t5時刻到t6時刻之間的時間段,負向的一次側諧振電流ILr的大小由第一功率開關Q1零電壓導通所需要的負向電流的大小決定,即由第一功率開關Q1和第二功率開關Q2的寄生電容的大小決定。在臨界導通模式中,負載輸出電流Io降低後,正向峰值電流Ip也會降低,第一功率開關Q1的導通時長隨之降低,非對稱半橋返馳式變換器電源100的工作頻率升高,而在輕載情況下,頻率升高會導致效率變差,所以需要進入圖3所示的非連續導通模式。在非連續導通模式中,第二功率開關Q2第二次關斷後、第一功率開關Q1導通前,即t6時刻到t7時刻之間的時間段,負向的一次側諧振電流ILr的大小由第一功率開關Q1零電壓導通所需要的負向電流的大小決定,即由第一功率開關Q1和第二功率開關Q2
的寄生電容的大小決定,這個負向電流通常較小;而第一功率開關Q1第一次關斷(即t1時刻)後的負向的一次側諧振電流ILr的幅值In大小由第二功率開關Q2的導通時間決定,第二功率開關Q2導通時間越長,第二功率開關Q2關斷時的負向的一次側諧振電流ILr的幅值In越大,輸出恆定所需的正向峰值電流Ip越大,非對稱半橋返馳式變換器電源100的工作頻率越高,所以非連續導通模式下的第二功率開關Q2的導通時間決定了非對稱半橋返馳式變換器電源100的降頻速度。而第二功率開關Q2的導通時間也不能太短,否則一次側勵磁電流ILm未到0A,即使第二功率開關Q2關斷後,正向的一次側勵磁電流ILm會通過第二功率開關Q2的體二極體繼續退磁,體二極體導通壓降較大,這樣也會大大影響效率。所以,針對非連續導通模式(見圖3),第二功率開關Q2在一次側勵磁電流ILm退磁到0A的時刻關斷,效率最優,而針對臨界導通模式(見圖2),需要從一次側勵磁電流ILm退磁到0A的時刻開始,對一次側諧振電流ILr負向增大到足以使第一功率開關Q1零電壓導通的時間進行計時。而第二功率開關Q2導通期間,非對稱半橋返馳式變換器電源100中的電流感測電阻Rcs(見圖1)檢測到的只是漏感中的一次側諧振電流ILr,而一次側勵磁電流ILm只有在第二功率開關Q2關斷後才能在電流感測電阻Rcs上檢測到,所以無法直接根據電流感測電阻Rcs上的一次側諧振電流ILr檢測一次側勵磁電感Lm退磁結束來決定第二功率開關Q2的關斷時刻。
In the critical conduction mode shown in FIG2, after the second power switch Q2 is turned off and before the first power switch Q1 is turned on, that is, in the time period from t5 to t6, the magnitude of the negative primary resonant current I Lr is determined by the magnitude of the negative current required for the zero-voltage conduction of the first power switch Q1, that is, by the magnitude of the parasitic capacitance of the first power switch Q1 and the second power switch Q2. In the critical conduction mode, after the load output current Io decreases, the forward peak current Ip will also decrease, and the conduction time of the first power switch Q1 will decrease accordingly, and the operating frequency of the asymmetric half-bridge flyback
至少鑒於上述問題,提出了根據本發明實施例的用於非對稱半橋返馳式變換器電源100的控制晶片和控制方法,能夠在不同輸入電壓、不同輸出電壓或不同負載電流下計算第二功率開關Q2導通時期一次側勵磁電流退磁到0A的時刻,從而控制第二功率開關Q2的關斷時刻,使得使用非對稱半橋返馳式變換器電源100的電路系統進入輕載後可以順利降頻,進而優化輕載效率。
At least in view of the above problems, a control chip and a control method for an asymmetric half-bridge flyback
圖4示出了根據本發明實施例的用於非對稱半橋返馳式變換器電源的控制晶片400的電路原理圖。下面結合圖1和圖4,描述圖4所示的控制晶片400應用於圖1所示的非對稱半橋返馳式變換器電源100的情況。
FIG. 4 shows a circuit schematic diagram of a
如圖1和圖4所示,在一些實施例中,控制晶片400可以被配置為:基於表徵非對稱半橋返馳式變換器電源100的輸出電壓Vo的輸出回饋信號FB和表徵流過變壓器T的一次側電感Lp的電流的電流感測信號Vcs,生成用於控制第一功率開關Q1的導通與關斷的上管控制信號Gate_up;以及基於輸出回饋信號FB和表徵變壓器T的輔助繞組上的電壓的電壓感測信號INV,生成用於控制第二功率開關Q2的導通與關斷的下管控制信號Gate_down。具體地,例如,控制晶片400可以被配置為至少基於輸出回饋信號FB和電壓感測信號INV識別非對稱半橋返馳式變換器電源100的變壓器的一次側勵磁電感Lm退磁結束的時刻,也即一次側勵磁電流ILm減小到0A的時刻,並且基於該時刻來生成下管控制信號Gate_down。
As shown in FIG. 1 and FIG. 4 , in some embodiments, the
可選地,控制晶片400被配置為基於輸出回饋信號FB、電壓感測信號INV以及外部調整信號ADJ來識別非對稱半橋返馳式變換器電源100的變壓器的一次側勵磁電感Lm退磁結束的時刻。
Optionally, the
如圖1和圖4所示,在一些實施例中,輸出電壓Vo通過電阻分壓以及穩壓管TL431和光耦之後產生輸出回饋信號FB;輸出回饋信號FB經過二極體降壓和電阻分壓後產生的電壓VFB_2與電流感測信號Vcs一起被送入控制晶片400的比較器401。比較器401通過比較VFB_2和Vcs的大小生成決定第一功率開關Q1從導通狀態變為關斷狀態的關斷時刻的上管關斷控制信號CV_off。也就是說,控制晶片400被進一步配置為:基於輸出回饋信號FB和電流感測信號Vcs,生成用於控制第一功率開關Q1從導通狀態變為關斷狀態的上管關斷控制信號CV_off。
As shown in FIG. 1 and FIG. 4 , in some embodiments, the output voltage Vo generates an output feedback signal FB after passing through a resistor divider, a voltage regulator TL431, and an optocoupler; the output feedback signal FB generates a voltage V FB_2 after a diode step-down and a resistor divider, and is sent to the
如圖1和圖4所示,在一些實施例中,控制晶片400包括死區時間控制單元402,該死區時間控制單元402在第二功率開關Q2從導通狀態變為關斷狀態時開始對第二功率開關Q2處於關斷狀態的持續時間進行計時,並在第二功率開關Q2處於關斷狀態的持續時間達到預設死區時間時生成用於控制第一功率開關Q1從關斷狀態變為導通狀態的上管導通控制信號up_on。
As shown in FIG. 1 and FIG. 4 , in some embodiments, the
如圖1和圖4所示,在一些實施例中,控制晶片400包括第一邏輯控制單元(Logic1)403,該第一邏輯控制單元403基於上管關斷控制信號CV_off和上管導通控制信號up_on生成上管控制信號Gate_up。
As shown in FIG. 1 and FIG. 4 , in some embodiments, the
如圖1和圖4所示,在一些實施例中,控制晶片400包括頻率控制單元404、退磁(Demagnetization,DEM)檢測單元405、以及零電壓導通(Zero Voltage Switching,ZVS)控制單元406,其中,頻率控制單元404基於輸出回饋信號FB(如VFB_2),生成用於控制非對稱半橋返馳式變換器電源100的工作頻率的頻率控制信號DCM_on,例如,當負載較重時,非對稱半橋返馳式變換器電源100工作於臨界導通模式,而在負載降低時,頻率控制信號DCM_on可以使得非對稱半橋返馳式變換器電源100的工作頻率降低,以工作於非連續導通模式;退磁檢測單元405至少基於電壓感測信號INV和輸出回饋信號FB(如VFB_2),生成用於表徵變壓器T的一次側勵磁電感Lm的退磁情況的退磁檢測信號DEM_off;零電壓導通控制單元406基於頻率控制信號DCM_on、退磁檢測信號DEM_off、以及電壓感測信號INV,生成用於控制第二功率開關Q2從導通狀態變為關斷狀態的下管關斷控制信號ZVS_off。可選地,在另外一些實施例中,退磁檢測單元405可被配置為基於電壓感測信號INV、輸出回饋信號FB(如VFB_2)以及外部調整信號ADJ,生成退磁檢測信號DEM_off。
As shown in Figures 1 and 4, in some embodiments, the
在本發明的實施例中,控制晶片400能夠基於退磁檢
測信號DEM_off來識別非對稱半橋返馳式變換器電源100的變壓器的一次側勵磁電感Lm退磁結束的時刻。僅作為示例,下面將分別結合圖7和圖8來具體描述如何基於退磁檢測信號DEM_off識別非對稱半橋返馳式變換器電源100的變壓器的一次側勵磁電感Lm退磁結束的時刻。
In an embodiment of the present invention, the
如圖1和圖4所示,在一些實施例中,死區時間控制單元402還在第一功率開關Q1從導通狀態變為關斷狀態時開始對第一功率開關Q1處於關斷狀態的持續時間進行計時,並在第一功率開關Q1處於關斷狀態的持續時間達到預設死區時間時生成用於控制第二功率開關Q2從關斷狀態變為導通狀態的下管導通控制信號down_on。
As shown in FIG1 and FIG4, in some embodiments, the dead
如圖1和圖4所示,在一些實施例中,控制晶片400還包括第二邏輯控制單元407,該第二邏輯控制單元407基於下管關斷控制信號ZVS_off、退磁檢測信號DEM_off、頻率控制信號DCM_on、以及下管導通控制信號down_on,生成下管控制信號Gate_down。
As shown in FIG. 1 and FIG. 4 , in some embodiments, the
具體地,第二邏輯控制單元407可以基於頻率控制信號DCM_on來確定非對稱半橋返馳式變換器電源100的不同工作狀態。例如,當頻率控制信號DCM_on持續為高位準或者在退磁檢測信號DEM_off出現暫態脈衝前變為高位準時,非對稱半橋返馳式變換器電源100工作於臨界導通模式,當頻率控制信號DCM_on在退磁檢測信號DEM_off出現暫態脈衝時為低位準時,非對稱半橋返馳式變換器電源100工作於非連續導通模式。第二邏輯控制單元407可以基於下管關斷控制信號ZVS_off和退磁檢測信號DEM_off來確定使第二功率開關Q2從導通狀態變為關斷狀態的關斷時刻,並且結合由頻率控制信號DCM_on確定的非對稱半橋返馳式變換器電源100的工作模式,來生成下管控制信號Gate_down。
Specifically, the second
具體地,例如,第二邏輯控制單元407可以在頻率控
制信號DCM_on持續為高位準或者在退磁檢測信號DEM_off出現暫態脈衝前變為高位準時,確定非對稱半橋返馳式變換器電源100工作於臨界導通模式,並且在退磁檢測信號DEM_off出現暫態脈衝時,使下管關斷控制信號ZVS_off保持為低位準,直到流過變壓器T的一次側漏感Lr的反向的一次側諧振電流ILr足夠實現第一功率開關Q1的零電壓導通時,使下管關斷控制信號ZVS_off出現暫態脈衝以關斷第二功率開關Q2;以及在頻率控制信號DCM_on在退磁檢測信號DEM_off出現暫態脈衝時為低位準時,確定非對稱半橋返馳式變換器電源100工作於非連續導通模式並且使第二功率開關Q2由導通狀態變為關斷狀態,在頻率控制信號DCM_on出現暫態脈衝時,使第二功率開關Q2由關斷狀態變為導通狀態,並且在流過變壓器T的一次側漏感Lr的反向的一次側諧振電流ILr足夠實現第一功率開關Q1的零電壓導通時,使下管關斷控制信號ZVS_off出現暫態脈衝以關斷所述第二功率開關。
Specifically, for example, the second
圖1所示的非對稱半橋返馳式變換器電源100,在圖4所示的控制晶片400的控制下,當第一功率開關Q1從關斷狀態進入導通狀態後,輸入電壓(即,直流輸入電壓)Vin通過諧振電容Cr給變壓器T的一次側勵磁電感Lm(包括一次側電感Lp和一次側漏感Lr)充電,一次側諧振電流ILr正向增大,電流感測信號Vcs增大,當電流感測信號Vcs高於輸出回饋信號FB經過分壓後的電壓VFB_2時,比較器401生成上管關斷控制信號CV_off(例如,高位準),以指示第一功率開關Q1從導通狀態變為關斷狀態。第一功率開關Q1關斷後,由於電感中的電流無法突變,正向的一次側諧振電流ILr給第二功率開關Q2的寄生電容放電、第一功率開關Q1的寄生電容充電,使得HB電壓下降至0V,第二功率開關Q2的體二極體從關斷狀態變為導通狀態。此時,死區時間控制單元402從第一功率開關Q1從導通狀態變為關斷狀態時開始對第一功率開關Q1處於關斷狀態的
持續時間進行計時,並在第一功率開關Q1處於關斷狀態的持續時間達到預設死區時間時生成用於控制第二功率開關Q2從關斷狀態變為導通狀態的下管導通控制信號down_on,實現第二功率開關Q2的零電壓導通。
In the asymmetric half-bridge flyback
如上所述,頻率控制單元404基於輸出回饋信號FB經過分壓後的電壓VFB_2,生成頻率控制信號DCM_on;退磁檢測單元405基於電壓感測信號INV和輸出回饋信號FB經過分壓後的電壓VFB_2(可選地,還基於外部調整信號ADJ),生成退磁檢測信號DEM_off;零電壓導通控制單元406基於頻率控制信號DCM_on、退磁檢測信號DEM_off、以及電壓感測信號INV,生成用於控制第二功率開關Q2從導通狀態變為關斷狀態的下管關斷控制信號ZVS_off。第二功率開關Q2關斷後,由於電感中的電流無法突變,負向的一次側諧振電流ILr給第一功率開關Q1的寄生電容放電、第二功率開關Q2的寄生電容充電,使得HB電壓上升至Vin,第一功率開關Q1的體二極體從關斷狀態變為導通狀態。死區時間控制單元402在第二功率開關Q2從導通狀態變為關斷狀態時開始對第二功率開關Q2處於關斷狀態的持續時間進行計時,並在第二功率開關Q2處於關斷狀態的持續時間達到預設死區時間時生成用於控制第一功率開關Q1從關斷狀態變為導通狀態的上管導通控制信號up_on,實現第一功率開關Q1的零電壓導通。
As described above, the
圖5示出了採用圖4所示的控制晶片400的非對稱半橋返馳式變換器電源100在臨界導通模式下工作時的多個信號的工作波形圖。如圖5所示,在t0時刻,第一功率開關Q1從關斷狀態變為導通狀態,非對稱半橋返馳式變換器電源100的輸入電壓(即,直流輸入電壓)Vin通過諧振電容Cr給變壓器T的一次側勵磁電感Lm(包括一次側電感Lp和一次側漏感Lr)充電,一次側諧振電流ILr正向增大,電流感測信號Vcs增大;在t1時刻,電流感測信號Vcs高
於輸出回饋信號FB經過分壓後的電壓VFB_2,第一功率開關Q1從導通狀態變為關斷狀態,輸入電壓Vin給變壓器T的一次側勵磁電感Lm充電的回路斷開,由於電感中的電流無法突變,正向的一次側諧振電流ILr給第二功率開關Q2的寄生電容放電、第一功率開關Q1的寄生電容充電,第一功率開關Q1和第二功率開關Q2之間的中間點HB處的電壓(簡稱HB電壓)下降;在HB電壓下降至0V時,第二功率開關Q2的體二極體從關斷狀態變為導通狀態;死區時間控制單元402從t1時刻開始對第一功率開關Q1處於關斷狀態的持續時間進行計時,並在第一功率開關Q1處於關斷狀態的持續時間達到預設死區時間時,在t2時刻,生成下管導通控制信號down_on(例如,高位準)使第二功率開關Q2從關斷狀態變為導通狀態,實現第二功率開關Q2的零電壓導通;之後諧振電容Cr和變壓器T的一次側漏感Lr諧振,變壓器一次側諧振電流ILr下降至0A後負向增大,同時變壓器T的二次側電感Ls退磁,一次側勵磁電流ILm減小;在t3時刻,一次側勵磁電流ILm減小到0A,退磁檢測信號DEM_off出現暫態脈衝,若頻率控制信號DCM_on持續為高位準或者在退磁檢測信號DEM_off出現暫態脈衝前變為高位準(即,非對稱半橋返馳式變換器電源100工作於臨界導通模式),第二功率開關Q2繼續處於導通狀態,諧振電容Cr通過第二功率開關Q2對變壓器T的一次側勵磁電感Lm放電,一次側諧振電流ILr負向增大,直至一次側諧振電流ILr的負向幅值足夠實現第一功率開關Q1的零電壓導通;在t4時刻,下管關斷控制信號ZVS_off出現暫態脈衝,第二功率開關Q2從導通狀態變為關斷狀態,諧振電容Cr對變壓器T的一次側勵磁電感Lm放電的回路斷開,由於電感中的電流無法突變,負向的一次側諧振電流ILr給第一功率開關Q1的寄生電容放電、第二功率開關Q2的寄生電容充電,HB電壓上升(若負向的一次側諧振電流ILr足夠大,HB電壓將上升直至輸入電壓Vin);HB電壓上升至輸入電壓Vin後,第
一功率開關Q1的體二極體從關斷狀態變為導通狀態;死區時間控制單元402從t4時刻開始對第二功率開關Q2處於關斷狀態的持續時間進行計時,並在第二功率開關Q2處於關斷狀態的持續時間達到預設死區時間時,在t5時刻,生成上管導通控制信號up_on(例如,高位準)使第一功率開關Q1從關斷狀態變為導通狀態,實現第一功率開關Q1的零電壓導通。
FIG. 5 shows operating waveform diagrams of multiple signals when the asymmetric half-bridge flyback
在圖5中,第一功率開關Q1的導通時間(從t0時刻到t1時刻)的時長Ton由輸出回饋信號FB的大小決定;第二功率開關Q2變為導通狀態的t2時刻到一次側勵磁電流ILm從峰值電流Ip退磁至0A的t3時刻的時長Tdem由退磁檢測單元405計算的退磁時間控制;退磁檢測單元405判斷退磁結束的t3時刻到一次側諧振電流ILr負向增大到足以使第一功率開關Q1零電壓導通的t4時刻(此時使第二功率開關Q2由導通狀態變為關斷狀態)的時長TZVS由零電壓導通控制單元406根據電壓感測信號INV確定的第一功率開關Q1變為導通狀態時的HB電壓控制。
In Figure 5, the duration T on of the conduction time of the first power switch Q1 (from time t0 to time t1) is determined by the size of the output feedback signal FB; the second power switch Q2 becomes conductive from the time t2 to the primary side. The duration T dem of the excitation current I Lm from the peak current Ip to 0 A at the time t3 is controlled by the demagnetization time calculated by the
圖6示出了採用圖4所示的控制晶片400的非對稱半橋返馳式變換器電源100在非連續導通模式下工作時的多個信號的工作波形圖。如圖6所示,在t0時刻,第一功率開關Q1從關斷狀態變為導通狀態,非對稱半橋返馳式變換器電源100的輸入電壓(即,直流輸入電壓)Vin通過諧振電容Cr給變壓器T的一次側勵磁電感Lm(包括一次側電感Lp和一次側漏感Lr)充電,一次側諧振電流ILr正向增大,電流感測信號Vcs增大;在t1時刻,電流感測信號Vcs高於輸出回饋信號FB經過分壓後的電壓VFB_2,第一功率開關Q1從導通狀態變為關斷狀態,輸入電壓Vin給變壓器T的一次側勵磁電感Lm充電的回路斷開,由於電感中的電流無法突變,正向的一次側諧振電流ILr給第二功率開關Q2的寄生電容放電、第一功率開關Q1的寄生電容充電,HB電壓下降;在HB電壓下降至0V時,第二功率
開關Q2的體二極體從關斷狀態變為導通狀態;死區時間控制單元402從t1時刻開始對第一功率開關Q1處於關斷狀態的持續時間進行計時,並在第一功率開關Q1處於關斷狀態的持續時間達到預設死區時間時,在t2時刻,生成下管導通控制信號down_on(例如,高位準)使第二功率開關Q2從關斷狀態變為導通狀態,實現第二功率開關Q2的零電壓導通;之後諧振電容Cr和變壓器T的一次側漏感Lr諧振,變壓器一次側諧振電流ILr下降至0A後負向增大,同時變壓器T的二次側電感Ls退磁,一次側勵磁電流ILm減小;在t3時刻,一次側勵磁電流ILm減小到0A,退磁檢測信號DEM_off出現暫態脈衝,若頻率控制信號DCM_on此時為低位準(即,非對稱半橋返馳式變換器電源100工作於非連續導通模式),則直接使第二功率開關Q2變為關斷狀態;在t4時刻,頻率控制單元404基於輸出回饋信號FB使輸出的頻率控制信號DCM_on變為高位準,使第二功率開關Q2再次變為導通狀態,諧振電容Cr通過第二功率開關Q2對變壓器T的一次側勵磁電感Lm放電,一次側諧振電流ILr負向增大,直至一次側諧振電流ILr的負向幅值足夠實現第一功率開關Q1的零電壓導通;在t5時刻,下管關斷控制信號ZVS_off出現暫態脈衝,第二功率開關Q2再次從導通狀態變為關斷狀態,諧振電容Cr對變壓器T的一次側勵磁電感Lm放電的回路斷開,由於電感中的電流無法突變,負向的一次側諧振電流ILr給第一功率開關Q1的寄生電容放電、第二功率開關Q2的寄生電容充電,HB電壓上升(若負向的一次側諧振電流ILr足夠大,HB電壓將上升直至輸入電壓Vin);HB電壓上升至輸入電壓Vin後,第一功率開關Q1的體二極體從關斷狀態變為導通狀態;死區時間控制單元402從t5時刻開始對第二功率開關Q2處於關斷狀態的持續時間進行計時,並在第二功率開關Q2處於關斷狀態的持續時間達到預設死區時間時,在t6時刻,生成上管導通控制信號up_on(例如,高位準)使第一功率開關Q1從關斷狀態變為導通狀態,實
現第一功率開關Q1的零電壓導通。
FIG6 shows the operating waveforms of multiple signals when the asymmetric half-bridge flyback
在圖6中,第一功率開關Q1的導通時間(從t0時刻到t1時刻)的時長Ton由輸出回饋信號FB的大小決定;第二功率開關Q2變為導通狀態的t2時刻到一次側勵磁電流ILm從峰值電流Ip退磁至0A的t3時刻(此時使第二功率開關Q2由導通狀態變為關斷狀態)的時長Tdem由退磁檢測單元405計算的退磁時間控制;頻率控制信號DCM_on變為高位準使第二功率開關Q2再次變為導通狀態的t4時刻到一次側諧振電流ILr負向增大到足以使第一功率開關Q1零電壓導通的t5時刻(此時使第二功率開關Q2由導通狀態變為關斷狀態)之間的時長TZVS由零電壓導通控制單元406根據電壓感測信號INV確定的第一功率開關Q1變為導通狀態時的HB電壓控制。
In Figure 6, the duration T on of the conduction time of the first power switch Q1 (from time t0 to time t1) is determined by the size of the output feedback signal FB; the second power switch Q2 becomes conductive from the time t2 to the primary side. The duration T dem when the excitation current I Lm demagnetizes from the peak current Ip to 0A at time t3 (at which time the second power switch Q2 changes from the on state to the off state) is controlled by the demagnetization time calculated by the
結合圖1、圖4-圖6可以得出,由於第二功率開關Q2導通期間,通過電流感測電阻Rcs檢測到的只是一次側漏感Lr中的一次側諧振電流ILr,而無法直接檢測一次側勵磁電流ILm,所以無法直接根據電流感測信號Vcs檢測勵磁電流變為0A來確定t3時刻。第一功率開關Q1變為關斷狀態時刻的峰值電流Ip由輸出回饋信號FB經過分壓後的電壓VFB_2決定:Ip=VFB_2/Rcs,基於電壓感測信號INV可以確定退磁電壓,從而可以通過計算來得出退磁時間。 Combining Figure 1, Figure 4-Figure 6, it can be concluded that, during the conduction period of the second power switch Q2, only the primary side resonant current I Lr in the primary side leakage inductance Lr is detected by the inductive sensing resistor Rcs, and the primary side magnetizing current I Lm cannot be directly detected. Therefore, the moment t3 cannot be determined directly based on the inductive sensing signal Vcs to detect that the magnetizing current becomes 0A. The peak current Ip when the first power switch Q1 becomes off is determined by the voltage V FB_2 of the output feedback signal FB after voltage division: Ip=V FB_2 /Rcs. The demagnetization voltage can be determined based on the voltage sensing signal INV, and the demagnetization time can be calculated.
無論非對稱半橋返馳式變換器電源100工作於臨界導通模式還是非連續導通模式,第二功率開關Q2導通時的退磁期間一次側勵磁電感Lm的退磁電壓都是N‧Vo,其中N=NP:Ns,NP表示變壓器T的一次繞組的線圈匝數,Ns表示變壓器T的二次繞組的線圈匝數,Vo表示非對稱半橋返馳式變換器電源100的輸出電壓。因此,一次側勵磁電流ILm從峰值電流Ip退磁到0A所需的時長Tdem大小為:
Regardless of whether the asymmetric half-bridge flyback
Tdem=Lp×Ip/(N‧Vo)=Lp×VFB_2/(Rcs×N‧Vo) (1)。 Tdem =Lp×Ip/(N‧Vo)=Lp× VFB_2 /(Rcs×N‧Vo) (1).
圖7示出了圖4所示的控制晶片400中的退磁檢測單
元405的一種示例實現的電路原理圖。在該示例實現中,退磁檢測單元405基於電壓感測信號INV、輸出回饋信號FB經過分壓後的電壓VFB_2以及外部調整信號ADJ,生成用於表徵變壓器T的一次側勵磁電感Lm的退磁情況的退磁檢測信號DEM_off。
Fig. 7 shows a circuit schematic diagram of an exemplary implementation of the
具體地,退磁檢測單元405可以被配置為在一次側勵磁電感Lm的退磁期間,對電壓感測信號進行採樣得到與退磁電壓N.Vo成比例的採樣電壓V1,基於該採樣電壓V1和外部調整信號ADJ生成受控信號VC1,通過比較受控信號VC1和輸出回饋信號FB經過分壓後的電壓VFB_2的大小來確定是否使退磁檢測信號DEM_off出現暫態脈衝,以及通過設置外部調整信號ADJ來使得退磁檢測信號DEM_off恰在變壓器T的一次側勵磁電感Lm退磁結束的時刻出現暫態脈衝,從而能夠通過退磁檢測信號DEM_off識別變壓器T的一次側勵磁電感Lm退磁結束的時刻,即圖5或圖6中所示的t3時刻。
Specifically, the
圖7中示出了退磁檢測單元405在上述配置下的一種具體實現方式。如圖7所示,退磁檢測單元405可以包括採樣模組405-1、壓控電流源405-2、比較模組405-3、以及開關S0/S1和電容器C2,它們如圖中所示地連接。
FIG7 shows a specific implementation of the
採樣模組405-1在第二功率開關Q2導通後的退磁時段Tdem內對電壓感測信號INV進行採樣得到電壓V1: The sampling module 405-1 samples the voltage sensing signal INV in the demagnetization period Tdem after the second power switch Q2 is turned on to obtain the voltage V1:
其中,NP表示變壓器T的一次繞組的線圈匝數,Ns表示變壓器T的二次繞組的線圈匝數,N=NP:Ns表示變壓器T的一次繞組的線圈匝數與二次繞組的線圈匝數之比,Naux表示非對稱半橋返馳式變換器電源100的變壓器T的輔助繞組的線圈匝數,R1、R2分別為非對稱半橋返馳式變換器電源100的變壓器T的輔助繞組分壓結構中的分壓電阻的阻值,Vo表示非對稱半橋返馳式變換器電源
100的輸出電壓,NVo表示第二功率開關Q2導通時的退磁期間一次側勵磁電感Lm的退磁電壓。
Where, NP represents the number of turns of the primary winding of transformer T, Ns represents the number of turns of the secondary winding of transformer T, N= NP :N s represents the ratio of the number of turns of the primary winding of the transformer T to the number of turns of the secondary winding, Naux represents the number of turns of the auxiliary winding of the transformer T of the asymmetric half-bridge flyback
V1電壓和外部調整信號ADJ被送入壓控電流源405-2,生成電流I1,I1=k1‧V1,其中係數k1受外部調整信號ADJ控制。第二功率開關Q2導通時的退磁期間(即Tdem)內,開關S0導通,電流I1對電容器C1充電得到電壓VC1(即,受控信號VC1)。電壓VC1和輸出回饋信號FB經過分壓後的電壓VFB_2被送入比較模組405-3進行比較。當電壓VC1高於電壓VFB_2時,DEM_off信號由低位準變為高位準。 The voltage V1 and the external adjustment signal ADJ are sent to the voltage-controlled current source 405-2 to generate a current I1, I1=k1‧V1, where the coefficient k1 is controlled by the external adjustment signal ADJ. During the demagnetization period (i.e., T dem ) when the second power switch Q2 is turned on, the switch S0 is turned on, and the current I1 charges the capacitor C1 to obtain the voltage V C1 (i.e., the controlled signal V C1 ). The voltage V C1 and the output feedback signal FB are divided into a voltage V FB_2 and sent to the comparison module 405-3 for comparison. When the voltage V C1 is higher than the voltage V FB_2 , the DEM_off signal changes from a low level to a high level.
由此計算得出第二功率開關Q2導通時的退磁時段Tdem為: From this calculation, the demagnetization period T dem when the second power switch Q2 is turned on is:
其中,C1表示電容器C1的電容值。 Where C1 represents the capacitance value of capacitor C1.
DEM_off信號變為高位準後,立即使開關S0關斷、S1導通,將電壓VC1放電至0V,為下一次退磁充電做準備,之後使開關S1關斷。從而,DEM_off信號呈現為暫態脈衝狀。 When the DEM_off signal becomes high, the switch S0 is immediately turned off and S1 is turned on, discharging the voltage VC1 to 0V to prepare for the next demagnetization charge, and then the switch S1 is turned off. Therefore, the DEM_off signal appears as a transient pulse.
一次側勵磁電流ILm從峰值電流Ip退磁至0A所需的Tdem時長為: The time T dem required for the primary side excitation current I Lm to demagnetize from the peak current Ip to 0A is:
Tdem=Lp×VFB_2/(Rcs×NVo) (4)。 T dem =Lp×V FB_2 /(Rcs×NVo) (4).
因此,使等式(3)和等式(4)相等,只需保證 ,即就可以滿足DEM_off 信號出現暫態脈衝時恰好一次側勵磁電流ILm退磁到0A。 Therefore, to make equation (3) and equation (4) equal, we only need to ensure that ,Right now It can be satisfied that the primary side excitation current I Lm demagnetizes to 0A when a transient pulse occurs in the DEM_off signal.
電容器C1的電容值是預先設置的固定參數,一次側電感Lp、一次繞組的線圈匝數Np、輔助繞組的線圈匝數Naux、輔助繞組分壓電阻R1和R2及電流感測電阻Rcs都由系統參數決定,所以只需要設置外部調整信號ADJ讓等式滿足即可。可替代地,在一些 實施例中,可以通過第一功率開關Q1導通期間內部計算電感充電斜率來確定k1的大小。因此,可以通過設置外部調整信號ADJ來使得退磁檢測信號恰在變壓器的一次側勵磁電感退磁結束的時刻出現暫態脈衝。 The capacitance value of capacitor C1 is a preset fixed parameter, and the primary inductor Lp, the number of turns of the primary winding Np , the number of turns of the auxiliary winding Naux, the auxiliary winding voltage divider resistors R1 and R2, and the current flow sensing resistor Rcs are all determined by system parameters, so it is only necessary to set the external adjustment signal ADJ to satisfy the equation. Alternatively, in some embodiments, the size of k1 can be determined by internally calculating the inductor charging slope during the conduction period of the first power switch Q1. Therefore, the demagnetization detection signal can be set by setting the external adjustment signal ADJ to have a transient pulse at the moment when the demagnetization of the primary magnetizing inductor of the transformer is completed.
圖8示出了圖4所示的控制晶片400中的退磁檢測單元405的另一種示例實現的電路原理圖。在該示例實現中,退磁檢測單元405僅基於電壓感測信號INV和輸出回饋信號FB經過分壓後的電壓VFB_2就能夠生成用於表徵變壓器T的一次側勵磁電感Lm的退磁情況的退磁檢測信號DEM_off。
FIG. 8 shows a circuit schematic diagram of another example implementation of the
具體地,退磁檢測單元405可以被配置為在第一功率開關Q1導通期間,對電壓感測信號INV進行採樣得到與(Vin-N‧Vo)成比例的第一採樣電壓V2,在第一功率開關Q1由導通狀態變為關斷狀態時,基於第一採樣電壓V2和輸出回饋信號FB經過分壓後的電壓VFB_2,運算得出比例控制信號,在一次側勵磁電感Lm的退磁期間,對電壓感測信號INV進行採樣得到與退磁電壓N‧Vo成比例的第二採樣電壓V3,基於比例控制信號和第二採樣電壓V3得到受控信號VC3,通過比較受控信號VC3和輸出回饋信號FB經過分壓後的電壓VFB_2的大小來確定是否使退磁檢測信號DEM_off出現暫態脈衝,以及通過設置比例控制信號來使得退磁檢測信號DEM_off恰在變壓器T的一次側勵磁電感Lm退磁結束的時刻出現暫態脈衝,從而能夠通過退磁檢測信號DEM_off識別變壓器T的一次側勵磁電感Lm退磁結束的時刻,即圖5或圖6中所示的t3時刻。
Specifically, the
圖8中示出了退磁檢測單元405在上述配置下的一種具體實現方式。如圖8所示,退磁檢測單元405可以包括採樣模組405-1’、第一壓控電流源405-2’、第二壓控電流源405-3’、運算模組405-4’、比較模組405-5’、以及開關S2/S3/S4/S5和電容器C2/C3,它們如圖中所示地連接。
Figure 8 shows a specific implementation of the
採樣模組405-1’對電壓感測信號INV進行採樣分別得到電壓V2和V3,其中電壓V2為在第一功率開關Q1導通期間採樣的與充磁電壓(Vin-N‧Vo)成比例的電壓: The sampling module 405-1' samples the voltage sensing signal INV to obtain voltages V2 and V3 respectively, wherein the voltage V2 is a voltage proportional to the magnetizing voltage (Vin-N‧Vo) sampled during the conduction period of the first power switch Q1:
V3為在第二功率開關Q2導通後的退磁時段內採樣的與退磁電壓N‧Vo成比例的電壓: V3 is the voltage proportional to the demagnetization voltage N‧Vo sampled during the demagnetization period after the second power switch Q2 is turned on:
其中,Np表示非對稱半橋返馳式變換器電源100的變壓器T的一次繞組的線圈匝數,Naux表示非對稱半橋返馳式變換器電源100的變壓器T的輔助繞組的線圈匝數,R1、R2分別為非對稱半橋返馳式變換器電源100的變壓器T的輔助繞組分壓結構中的分壓電阻的阻值,(Vin-N‧Vo)表示第一功率開關Q1導通期間的充磁電壓,Vin表示非對稱半橋返馳式變換器電源100的輸入電壓,Vo表示非對稱半橋返馳式變換器電源100的輸出電壓,N=NP:Ns,NP表示變壓器T的一次繞組的線圈匝數,Ns表示變壓器T的二次繞組的線圈匝數。
Among them, N p represents the number of coil turns of the primary winding of the transformer T of the asymmetric half-bridge flyback
第一壓控電流源405-2’基於電壓V2生成電流I2:I2=k2‧V2,係數k2為預設的固定值。在第一功率開關Q1的導通時段Ton內,使開關S2導通,電流I2對電容器C2充電得到電壓VC2,在第一功率開關Q1變為關斷狀態的同時使開關S2關斷,對電容器C2的充電結束。在電容器C2的充電結束時,VC2=k2.(V in -N.Vo).
。在第二功率開關Q2導通後的退磁時段內,
電壓VC2維持不變。根據變壓器的一次側電感充電伏秒公式計算得到第一功率開關Q1的導通時段。將等式(8)
代入等式(7)可以得出。
The first voltage-controlled current source 405-2' generates current I2 based on voltage V2: I2=k2‧V2, and coefficient k2 is a preset fixed value. During the conduction period Ton of the first power switch Q1, the switch S2 is turned on, and the current I2 charges the capacitor C2 to obtain the voltage V C2 . When the first power switch Q1 becomes the off state, the switch S2 is turned off, and the capacitor C2 is charged. The charging is completed. At the end of charging of capacitor C2, V C2 =
運算模組405-4’基於電壓VC2和輸出回饋信號FB經過分壓後的電壓VFB_2,得到比例控制信號k3×(VFB_2/VC2)。 The computing module 405-4' obtains the proportional control signal k3×(V FB_2 /V C2 ) based on the voltage V C2 and the divided voltage V FB_2 of the output feedback signal FB.
第二壓控電流源405-3’基於電壓V3和比例控制信號k3×(VFB_2/VC2)生成電流I3:I3=k3×(VFB_2/VC2)×V3。在第二功率開關Q2導通後的退磁時段Tdem內,使開關S4導通,電流I3對電容器C3充電得到電壓VC3(即,受控信號VC3)。電壓VC3和輸出回饋信號FB經過分壓後的電壓VFB_2被送入比較模組405-5’進行比較。當電壓VC3高於電壓VFB_2時,DEM_off信號由低位準變為高位準。由此計算得出第二功率開關Q2導通時的退磁時段Tdem為: The second voltage-controlled current source 405-3' generates a current I3 based on the voltage V3 and the proportional control signal k3×(V FB_2 /V C2 ): I3=k3×(V FB_2 /V C2 )×V3. In the demagnetization period T dem after the second power switch Q2 is turned on, the switch S4 is turned on, and the current I3 charges the capacitor C3 to obtain the voltage V C3 (i.e., the controlled signal V C3 ). The voltage V C3 and the output feedback signal FB are sent to the comparison module 405-5' for comparison after the voltage V FB_2 is divided. When the voltage V C3 is higher than the voltage V FB_2 , the DEM_off signal changes from a low level to a high level. The demagnetization period T dem when the second power switch Q2 is turned on is calculated as:
一次側勵磁電流ILm從峰值電流Ip退磁至0A所需的Tdem時長為: The time Tdem required for the primary magnetizing current I Lm to demagnetize from the peak current Ip to 0A is:
因此,使等式(10)和等式(11)相等,只需保證內部 參數,即可保證一次側勵磁電流ILm退磁到0A時DEM_off信號由低位準變為高位準。在DEM_off信號變為高位準後,立即使開關S3和S5導通,將電壓VC2和電壓VC3放電至0V,為下一次退磁計算的充電做準備,之後使開關S3和S5關斷。從而,DEM_off信號呈現為暫態脈衝狀。 Therefore, to make Equation (10) and Equation (11) equal, we only need to ensure that the internal parameters , which can ensure that the DEM_off signal changes from low level to high level when the primary side excitation current I Lm demagnetizes to 0A. After the DEM_off signal becomes high, the switches S3 and S5 are turned on immediately, and the voltage V C2 and the voltage V C3 are discharged to 0V to prepare for charging for the next demagnetization calculation, and then the switches S3 and S5 are turned off. Therefore, the DEM_off signal appears as a transient pulse.
本發明可以以其他的具體形式實現,而不脫離其精神和本質特徵。例如,特定實施例中所描述的演算法可以被修改,而系統體系結構並不脫離本發明的基本精神。因此,當前的實施例在所有 方面都被看作是示例性的而非限定性的,本發明的範圍由所附請求項而非上述描述定義,並且,落入請求項的含義和等同物的範圍內的全部改變從而都被包括在本發明的範圍之中。 The present invention may be implemented in other specific forms without departing from its spirit and essential features. For example, the algorithm described in a specific embodiment may be modified, and the system architecture does not depart from the basic spirit of the present invention. Therefore, the present embodiments are considered in all respects to be illustrative rather than restrictive, the scope of the present invention is defined by the attached claims rather than the above description, and all changes that fall within the meaning and scope of equivalents of the claims are thereby included in the scope of the present invention.
400:控制晶片 400: Control chip
401:比較器 401: Comparator
402:死區時間控制單元 402: Dead time control unit
403:第一邏輯控制單元(Logic1) 403: First logic control unit (Logic1)
404:頻率控制單元 404: Frequency control unit
405:退磁(Demagnetization,DEM)檢測單元 405: Demagnetization (DEM) detection unit
406:零電壓導通(Zero Voltage Switching,ZVS)控制單元 406: Zero Voltage Switching (ZVS) control unit
407:第二邏輯控制單元 407: Second logic control unit
AC:交流電 AC: alternating current
ADJ:外部調整信號 ADJ: external adjustment signal
Cr:諧振電容 Cr: resonant capacitor
CV_off:上管關斷控制信號 CV_off: Upper tube turn-off control signal
DCM_on:頻率控制信號 DCM_on: frequency control signal
DEM_off:退磁檢測信號 DEM_off: demagnetization detection signal
down_on:下管導通控制信號 down_on: Down tube conduction control signal
FB:輸出回饋信號 FB: Output feedback signal
Gate_down:下管控制信號 Gate_down: Down tube control signal
Gate_up:上管控制信號 Gate_up: Upper tube control signal
HB:第一功率開關Q1和第二功率開關Q2之間的中間點 HB: The midpoint between the first power switch Q1 and the second power switch Q2
IDo:二次側電流 I Do : secondary side current
ILr:一次側諧振電流 I Lr : primary side resonance current
INV:電壓感測信號 INV: voltage sensing signal
Lm:一次側勵磁電感 Lm: primary side magnetic inductance
Lp:一次側電感 Lp: primary side inductance
Lr:一次側漏感 Lr: primary side leakage inductance
Ls:二次側電感 Ls: Secondary inductance
Naux,Np,Ns:線圈匝數 Naux, Np , Ns : Number of coil turns
Q1:第一功率開關 Q1: The first power switch
Q2:第二功率開關 Q2: Second power switch
R1,R2:分壓電阻 R1, R2: voltage dividing resistor
Rcs:電流感測電阻 Rcs: Inductive flow measurement resistance
TL431:穩壓管 TL431: voltage regulator tube
up_on:上管導通控制信號 up_on: upper tube conduction control signal
Vaux:輔助繞組電壓 Vaux: auxiliary winding voltage
Vcs:電流感測信號 Vcs: current sensing signal
VFB_2:電壓 V FB_2 : Voltage
Vin:非對稱半橋返馳式變換器電源100的輸入電壓(直流輸入電壓)
Vin: input voltage (DC input voltage) of the asymmetric half-bridge flyback
Vo:非對稱半橋返馳式變換器電源100的輸出電壓
Vo: the output voltage of the asymmetric half-bridge flyback
ZVS_off:下管關斷控制信號 ZVS_off: Lower tube shutdown control signal
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US20140140109A1 (en) * | 2012-11-20 | 2014-05-22 | Texas Instruments Incorporated | Flyback power supply regulation apparatus and methods |
TW201603444A (en) * | 2014-07-09 | 2016-01-16 | On Bright Electronics Shanghai | Charge control circuit, flyback type power source transformation system and charge control method |
JP2016042765A (en) * | 2014-08-18 | 2016-03-31 | 富士電機株式会社 | Switching power supply apparatus |
TW202008703A (en) * | 2018-07-27 | 2020-02-16 | 立錡科技股份有限公司 | ZVS control circuit for use in a flyback power converter |
TW202201891A (en) * | 2020-06-29 | 2022-01-01 | 立錡科技股份有限公司 | Resonant half-bridge flyback power converter and primary controller circuit and control method thereof |
TW202230940A (en) * | 2021-01-18 | 2022-08-01 | 大陸商昂寶電子(上海)有限公司 | Flyback switching power supply and control method thereof |
CN115224951A (en) * | 2022-08-23 | 2022-10-21 | 无锡市德科立光电子技术股份有限公司 | Constant-voltage control system of primary-side feedback flyback converter |
CN115360918A (en) * | 2022-08-24 | 2022-11-18 | 南京理工大学 | Primary side sampling resistor-based constant current control system, method and medium of primary side feedback flyback converter |
CN115694145A (en) * | 2022-11-01 | 2023-02-03 | 昂宝电子(上海)有限公司 | Circuit for asymmetric half-bridge flyback power supply |
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