TWI810443B - Substrate holding device, photolithography device and method of manufacturing article - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 203
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000206 photolithography Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 238000005192 partition Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 2
- 238000001459 lithography Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Condensed Matter Physics & Semiconductors (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
[課題]提供一種技術,在為了有效率地保持發生彎曲的基板方面有利。 [解決手段]一種基板保持裝置,其為將基板進行保持者,包含在與被保持的前述基板相向的相向面具有排氣孔的基底、和從前述基底突出而支撐前述基板的支撐構材,前述支撐構材被構成為,具有繞前述相向面之中心部至少3周的連貫的螺旋狀,在從前述中心部往外側的方向上,比起第n周部分(n為自然數)與第n+1周部分之間隔,前述第n+1周部分與第n+2周部分之間隔較窄。[Problem] It is advantageous to provide a technique for efficiently holding a bent substrate. [Solution] A substrate holding device for holding a substrate, comprising a base having exhaust holes on a surface facing the held substrate, and a support member protruding from the base to support the substrate, The above-mentioned supporting member is constituted to have a continuous helical shape around the central portion of the aforementioned facing surface at least 3 times, and in the direction from the central portion to the outside, the n-th round portion (n is a natural number) and the The interval between the n+1-th week part is relatively narrow.
Description
本發明涉及基板保持裝置、光刻裝置及物品之製造方法。 The invention relates to a substrate holding device, a photolithography device and a manufacturing method of an article.
在近年來的半導體裝置、液晶顯示裝置等的製程,有時在半導體晶圓、玻璃板等的基板上予以堆積複數個層,或形成相對於基板應力強的膜、相對厚的膜。如此的情況下,可能在基板形成凹狀的彎曲,可能難以在以光刻裝置在基板上形成圖案的程序等使基板保持裝置(基板載台)正常地保持基板。於專利文獻1,揭露一種晶圓夾盤,在夾具表面以固定間隔而平行的螺旋狀地形成晶圓吸附用的吸氣溝與空氣排出用的排氣溝,使排氣溝的外周端開口於主體外緣,從而使晶圓的恰當的吸附與平面精度提升。
In the manufacturing process of semiconductor devices and liquid crystal display devices in recent years, multiple layers may be deposited on substrates such as semiconductor wafers and glass plates, or films with strong stress relative to the substrates or relatively thick films may be formed. In such a case, concave curvature may be formed on the substrate, and it may be difficult for the substrate holding device (substrate stage) to properly hold the substrate in a process of forming a pattern on the substrate with a photolithography apparatus. In
[專利文獻1]日本實開昭60-142036號公報 [Patent Document 1] Japanese Publication No. 60-142036
例如發生凹狀的彎曲的基板越往外周部越難矯正。為此,要以基板保持裝置有效率地保持該基板,優選上越往基板的外周部,使將基板吸引之力(吸引力)越大。 For example, it is difficult to correct a concavely warped substrate as it moves toward the outer periphery. Therefore, in order to efficiently hold the substrate by the substrate holding device, it is preferable to increase the force (attraction force) for attracting the substrate toward the outer peripheral portion of the substrate.
所以,本發明目的在於提供一種技術,在為了有效率地保持發生彎曲的基板方面有利。 Therefore, an object of the present invention is to provide a technique that is advantageous in efficiently holding a bent substrate.
為了達成上述目的,作為本發明的一態樣的基板保持裝置為一種基板保持裝置,其為將基板進行保持者,包含在與被保持的前述基板相向的相向面具有排氣孔的基底、和從前述基底突出而支撐前述基板的支撐構材,前述支撐構材被構成為,具有繞前述相向面之中心部至少3周的連貫的螺旋狀,在從前述中心部往外側的方向上,比起第n周部分(n為自然數)與第n+1周部分之間隔,前述第n+1周部分與第n+2周部分之間隔較窄。 In order to achieve the above objects, a substrate holding device as an aspect of the present invention is a substrate holding device that holds a substrate and includes a base having an exhaust hole on a surface facing the held substrate, and A support member protruding from the base to support the substrate, the support member is configured to have a continuous spiral shape that goes around the center of the facing surface at least three times, and in the direction from the center to the outside, more than The interval between the nth week part (n is a natural number) and the n+1th week part is relatively narrow.
本發明的進一步之目的或其他態樣將透過在以下參照圖式進行說明之優選實施方式而加以明確化。 Further objects and other aspects of the present invention will be clarified through preferred embodiments described below with reference to the drawings.
依本發明時,例如可提供一種技術,在為了有效率地保持發生彎曲的基板方面有利。 According to the present invention, for example, it is possible to provide a technique which is advantageous in order to efficiently hold a bent substrate.
10a,10b:基板保持裝置 10a, 10b: substrate holding device
11:基底 11: Base
11a:排氣孔 11a: Vent
12:隔牆構材 12: Partition wall member
13:支撐構材 13: Supporting member
14:第2支撐構材 14: Second supporting member
15:流道 15: Runner
[圖1]就第1實施方式的基板保持裝置的構成進行繪示的示意圖。 [ Fig. 1] Fig. 1 is a schematic diagram illustrating the configuration of a substrate holding device according to a first embodiment.
[圖2]就第1實施方式的基板保持裝置的構成進行繪示的剖面圖。 [ Fig. 2] Fig. 2 is a cross-sectional view showing the structure of the substrate holding device according to the first embodiment.
[圖3]就在歷來的基板保持裝置方面的基板的保持過程進行繪示的圖。 [ Fig. 3 ] A diagram showing a substrate holding process in a conventional substrate holding device.
[圖4]為了說明基板保持裝置的構成例用的圖。 [ Fig. 4] Fig. 4 is a diagram for explaining a configuration example of a substrate holding device.
[圖5]就支撐構材之螺旋狀的周數進行繪示的圖。 [ Fig. 5 ] A diagram showing the number of turns of the helical shape of the supporting member.
[圖6]就支撐構材之流道寬進行繪示的圖。 [Fig. 6] A diagram showing the channel width of the supporting member.
[圖7]就基板的彎曲進行繪示的圖。 [ Fig. 7 ] A diagram showing warping of a substrate.
[圖8]就為了予以維持基板的吸引力所需的流道寬進行繪示的圖。 [ Fig. 8 ] A diagram showing the channel width required to maintain the attractive force of the substrate.
[圖9]就第2實施方式的基板保持裝置的構成進行繪示的示意圖。 [ Fig. 9] Fig. 9 is a schematic diagram illustrating the configuration of a substrate holding device according to a second embodiment.
[圖10]就曝光裝置的構成進行繪示的示意圖。 [ Fig. 10 ] A schematic diagram showing the configuration of an exposure apparatus.
以下,參照圖式詳細說明實施方式。另外,以下的實施方式非限定申請專利範圍的發明者。於實施方式雖記載複數個特徵,惟不限於此等複數個特徵的全部為發明必須者,此外複數個特徵亦可任意進行組合。再者, 圖式中,對相同或同樣的構成標注相同的參考符號,重複之說明省略。 Embodiments will be described in detail below with reference to the drawings. In addition, the following embodiments do not limit the inventors of the claims. Although plural features are described in the embodiments, all of these plural features are not limited to being essential to the invention, and plural features may be combined arbitrarily. Furthermore, In the drawings, the same reference symbols are assigned to the same or similar configurations, and overlapping explanations are omitted.
就涉及本發明的第1實施方式的基板保持裝置10a的構成進行說明。基板保持裝置10a是為了保持半導體晶圓、玻璃板等的基板W用的裝置,例如可包含基底11、隔牆構材12、和支撐構材13。在本實施方式,就保持半導體晶圓等的圓形的基板W的基板保持裝置10a的構成例進行說明。圖1為從上方(+Z方向側)視看本實施方式的基板保持裝置10a時的圖,圖2為示於圖1的基板保持裝置10a的A-A剖面圖。此外,在各圖,使水平面上彼此正交的方向為X方向及Y方向,使鉛直方向為Z方向。
The configuration of the
基底11具有在由基板保持裝置10a正常地保持基板W時與該基板W相向的相向面(+Z方向側的面),在該相向面具有排氣孔11a。排氣孔11a如示於圖2般與真空泵浦等的排氣裝置30連通,控制排氣裝置30而從排氣孔11a排出氣體,使得可夾持(吸引)配置於基底11之上的基板W。本實施方式的情況下,如示於圖1,於基底11,如示於圖1,在配置基板W之中心部的位置設置複數個(3個)排氣孔11a。另外,排氣孔11a的個數不限於3個,亦可為1~2個或4個以上。
The
隔牆構材12為以支撐基板W的外周部的方式從基底1朝+Z方向突出的構材。隔牆構材12可被構成為以
在由基板保持裝置10a正常地保持基板W時在基板W與基底11之間形成密閉空間的方式沿著基板W的外周部的情況下的形狀(本實施方式下為環狀)。
The
支撐構材13為以在隔牆構材12的內側支撐基板W的方式從基底11朝+Z方向突出的構材。支撐構材13如示於圖1般為在基底上繞基底11的相向面之中心部至少3周的連貫(連續)的螺旋狀。本實施方式的情況下,具有以包含排氣孔11a的區域11b(以下有時稱為「中央區域11b」)為中心而至少3周的連貫的螺旋狀。並且,支撐構材13的其中一個端部位於複數個排氣孔11a之間(具體而言,基底11的相向面的重心、隔牆構材12的重心),支撐構材13的另一個端部連接於隔牆構材12。如此般螺旋狀地構成支撐構材13,使得從排氣孔11a排出的氣體的流道15被構成為螺旋狀,故可將基板W從其中心部朝外周部逐漸進行保持(吸引)。
The
此外,基板保持裝置10a是為了減低保持後的基板W的撓曲,亦可如示於圖1,在隔牆構材12的內側(例如,支撐構材13之間)的基底11上具有以複數個針形、細長的肋狀而構成的第2支撐構材14。在示於圖1之例,為了使圖容易理解,雖以複數個針形而構成的第2支撐構材14僅設於隔牆構材12的內側的一部分,惟第2支撐構材14可相對於隔牆構材12的內側的整體進行設置。
In addition, the
在如此般具有被構成為螺旋狀的支撐構材13的基板保持裝置10a,就堆積複數個層或形成相對厚的膜
因而發生凹狀的彎曲的基板W,可一面矯正該彎曲一面進行保持。例如,發生凹狀的彎曲的基板W在緊接著搬送至基板保持裝置10a之後,基板W之中心部雖接觸於支撐構材13,惟基板W的外周部呈相對於支撐構材13浮起(分離)的狀態。在此狀態下控制排氣裝置30,透過排氣孔11a開始基板W與基底11之間的排氣時,首先基板W之中心部被保持(吸引),之後基板W沿著由於支撐構材13而被構成為螺旋狀的流道15而逐漸被保持(吸引)下去。如此,基板保持裝置10a沿著被構成為螺旋狀的流道15,從基板W之中心部朝外周部逐漸進行吸引,可一面矯正基板W的彎曲一面進行保持。
In such a
此外,發生凹狀的彎曲的基板W是越往外周部越難矯正。為此,要透過基板保持裝置10a一面矯正基板W的彎曲一面有效率地保持基板W,優選上越往基板W的外周部,使將基板W吸引之力(吸引力)越大。增加吸引力的方法方面,雖舉例如增設排氣裝置30或增加排氣裝置30的排氣量的方法,惟此等方法可能導致裝置複雜化而大規模化。
In addition, the board|substrate W which bends concavely becomes difficult to correct as it goes to the outer peripheral part. Therefore, in order to efficiently hold the substrate W while correcting the curvature of the substrate W by the
所以,在本實施方式的基板保持裝置10a,支撐構材13如示於圖2般被構成為,比起第n周部分與第n+1周部分之間隔(流道寬Wn),第n+1周部分與第n+2周部分之間隔(流道寬Wn+1)較窄。例如,支撐構材13被構成為,第n周部分與第n+1周部分之間隔隨著往外側而變窄。另外,「n」表示被構成為螺旋狀的支撐構材13的周數,
為1以上的自然數。在如此般構成的基板保持裝置10a,在保持發生凹狀的彎曲的基板W之際,可越往基板W的外周部越增加基板W的吸引力,故可一面矯正基板W的彎曲一面有效率地保持基板W。
Therefore, in the
例如,支撐構材13可被構成為,第n+1周部分與第n+2周部分之間隔(流道寬Wn+1)相對於第n周部分與第n+1周部分之間隔(流道寬Wn)為60~95%的範圍內。較優選上,支撐構材13可被構成為,包含一部分,該部分為第n+1周部分與第n+2周部分之間隔(流道寬Wn+1)相對於第n周部分與第n+1周部分之間隔(流道寬Wn)為75~85%的範圍內的部分。
For example, the
就本實施方式的基板保持裝置10a可將基板W一面矯正一面有效率地保持的原理,一面與具有環狀的支撐構材的歷來的基板保持裝置50比較一面進行說明。
The principle that the
圖3為就在歷來的基板保持裝置50之基板W的保持過程進行繪示的圖。圖3(a)為從上方(+Z方向)視看歷來的基板保持裝置50時的圖,圖3(b)~(c)為示於圖3(a)的歷來的基板保持裝置50的B-B剖面圖。歷來的基板保持裝置50如示於圖3(a),例如具有基底51、支撐基板W的外周部的環狀的隔牆構材52、和在隔牆構材52的內側支撐基板W的環狀的複數個支撐構材53。於基底51,在環狀的複數個支撐構材53之間設置排氣孔51a。
FIG. 3 is a diagram illustrating a holding process of a substrate W in a conventional
在如此般構成的歷來的基板保持裝置50,將具有凹狀的彎曲的基板W從其中心部往外周部逐漸保持下去的過程中,氣體從基板W與基板保持裝置50的間隙流入。如此的間隙的面積在將間隙的高度以「h」界定時,如示於圖3(b)般在半徑r1的位置保持基板W的情況下為2π×r1×h。此外,如示於圖3(c),在比半徑r1大的半徑r2的位置保持基板W的情況下為2π×r2×h。此情況下,在基板W的保持位置的圓周比在圖3(b)時變大使得間隙的面積增加,故該增加的程度氣體的流速降低,隨此基板W的吸引力亦會降低。亦即,基板W的保持位置越往基板W的外周部,越可能難以將基板W矯正而保持。
In the
另一方面,在具有螺旋狀的支撐構材13的本實施方式的基板保持裝置10a,將具有凹狀的彎曲的基板W從其中心部往外周部逐漸保持下去的過程中,氣體從以基底11、支撐構材13、和基板W界定的流道15流入。亦即,氣體流入的間隙的面積不依存於保持基板W的位置的半徑,變成依存於支撐構材13的第n周部分與第n+1周部分之間隔(流道寬Wn)。例如,在圖4的以點劃線表示的位置P進行基板W的保持的情況下,氣體流入的間隙的面積為(rn+1-rn)×h。「rn」表示第n周部分的半徑,「rn+1」表示第n+1周部分的半徑。
On the other hand, when the
本實施方式的情況下,在支撐構材13之第n周部分與第n+1周部分之間隔(流道寬Wn)隨著往外側而變窄。亦即,基板W的保持位置越往基板W的外周部,以第n
周部分與第n+1周部分界定的流道15的截面積變越小。為此,基板W的保持位置越往基板W的外周部,越使氣體的流速增加,隨此亦可使基板W的吸引力增加。藉此,即使為明顯發生凹狀的彎曲的基板W,仍可將基板W一面矯正一面有效率且確實地保持直到外周部。
In the case of the present embodiment, the interval (flow path width W n ) between the nth peripheral part and the n+1th peripheral part of the
接著,就具有螺旋狀的支撐構材13的具體的構成例進行說明。
Next, a specific configuration example of the
支撐構材13的螺旋狀可透過例如螺旋曲線(spiral curve)表現。螺旋曲線在如示於圖4般使在以隔牆構材12的重心為原點的極座標系中的至第n周部分為止的向量長(半徑向量長)為rn、使半徑向量的旋轉角為θ的情況下,以rn=a×θb的式表示。此式中,常數a是為了界定支撐構材13的第1周部分的尺寸(例如,徑長的大小)用的值。此外,常數b是了界定相對於旋轉角θ之第n周部分與第n+1周部分之間隔(流道寬Wn)的減少率用的常數。常數b在比0大且比1小的情況(0<b<1)下,越往外側,流道寬Wn變越窄,等於1的情況(b=1)下,在半徑方向上成為一定的流道寬Wn,比1大的情況(b>1)下,越往外側,流道寬Wn越寬。本實施方式的支撐構材13被構成為流道寬Wn隨著往外側而變窄,故常數b可設定為符合0<b<1。常數a及常數b可任意地設定,可依作為保持對象之基板W的彎曲的形狀、彎曲的量、基板W的大小、來自排氣孔11a的排氣量而酌情設
定。
The helical shape of the
例如,a=25、b=0.5的情況下,在支撐構材13之螺旋狀的周數如示於圖5般為5周,在支撐構材13之第n周部分與第n+1周部分之間隔(流道寬Wn)如示於圖6,越往外側越減少。於此,在示於圖6之例,在半徑向量長rn為62.9[mm]以下的範圍內流道寬Wn單調地增加,而此表示至62.9[mm]為止為第1周部分,該值後第2周部分開始。本實施方式的支撐構材13為第n周部分與第n+1周部分之間隔(流道寬Wn)隨著往外側而變窄的構成,「n」為1以上的自然數。亦即,在本實施方式的支撐構材13被構成為,從第2周部分開始而在第1周部分與第2周部分之間形成流道15的旋轉角θ,亦即在半徑向量長rn=62.9[mm]之後流道寬Wn逐漸減少。
For example, in the case of a=25 and b=0.5, the number of helical turns of the supporting
另一方面,基板W的彎曲的形狀在半導體製程進行成膜兼熱處理的過程中,一般而言為拋物面形。拋物面形在以在通過中心的平面狀的一軸切開剖面的情況下,使高度z、半徑r、彎曲形狀的曲率為c的情況下,以z=c×r2的式表示。此情況下,具有如此的彎曲形狀的基板W在僅配置於基板保持裝置10a(支撐構材13)之上的狀態下,如示於圖7,越往基板W的外周部,基板保持裝置10a與基板W的間隙越大。亦即,越往基板W的外周部越難將可矯正基板W的負壓形成於該間隙,難以進行基板W的矯正。
On the other hand, the curved shape of the substrate W is generally a parabolic shape during film formation and heat treatment in the semiconductor manufacturing process. The paraboloid is expressed by the formula z=c× r2 when the height z, the radius r, and the curvature of the curved shape are c in the case of a plane uniaxial cross-section passing through the center. In this case, when the substrate W having such a curved shape is placed only on the
將具有如此的彎曲形狀的基板W一面矯正一
面保持的情況下,優選上越往基板W的外周部,越增加基板W的吸引力。然而,排氣裝置30的排氣量方面存在限制,增設排氣裝置30恐招致裝置的複雜化、裝置成本的增加。為此,在本實施方式的基板保持裝置10a,為了在排氣裝置30的排氣量方面存在限制同時使吸引力增加,隨著往基板W的外周部而使流道寬Wn變窄,從而使在基板W與基板保持裝置10之間的氣體的流速增加。
When holding the substrate W having such a curved shape while being corrected, it is preferable to increase the suction force of the substrate W toward the outer peripheral portion of the substrate W. However, there is a limitation on the exhaust volume of the
基板W與基板保持裝置10a的間隙如示於圖7,越往基板W的外周部以半徑向量長rn的平方(r2)變越廣,故在該間隙的氣體的流速降低為1/r2,吸引力降低為1/r4。因此,要往基板W的外周部仍使吸引力維持,優選上使流道寬以1/r2以上的比率而減少。藉此,補償越往外周部越降低的基板W的吸引力(亦即,予以維持吸引力),可將基板W一面矯正一面效率佳地保持。具體而言,將流道寬Wn界定為Wn=(rn+1-rn)的情況下,要予以維持基板W的吸引力,需要符合Wn/(rn/k)2≦(a×(θ+2π)b-a×θb)的條件。在上述的式中,「rn」表示第n周部分的半徑向量長,「rn+1」表示第n+1周部分的半徑向量長。此外,「k」表示支撐構材13的第1周部分的尺寸(例如半徑向量長)。例如,a=25、b=0.5的情況下,為了予以維持基板W的吸引力所需的流道寬Wn如示於圖8,
As shown in FIG. 7, the gap between the substrate W and the
如上述,本實施方式的基板保持裝置10a被構成為,具有為螺旋狀的支撐構材13,支撐構材13的第n周部分與第n+1周部分之間隔(流道寬Wn)隨著往外側而變
窄。藉此,即使為發生凹狀的彎曲的基板W,仍可隨著往基板W的外周部而使吸引力增加,將該基板W一面矯正一面有效率地保持。
As described above, the
就涉及本發明的第2實施方式的基板保持裝置10b進行說明。本實施方式的基板保持裝置10b為基本上承接第1實施方式的基板保持裝置10a的構成者,惟隔牆構材12及支撐構材13的形狀不同。具體而言,第1實施方式的基板保持裝置10a為了保持例如半導體晶圓等的圓形的基板W而被構成為圓形,而本實施方式的基板保持裝置10b為了保持例如玻璃板等的矩形的基板W而被構成為矩形。
The
圖9為從上方(+Z方向)視看本實施方式的基板保持裝置10b時的圖。如示於圖9,在本實施方式的基板保持裝置10b,隔牆構材12及支撐構材13被構成為矩形狀。此情況下,亦如同第1實施方式,即使為發生凹狀的彎曲的基板W,仍可隨著往基板W的外周部而使吸引力增加,將該基板W一面矯正一面有效率地保持。
Fig. 9 is a diagram of the
就涉及本發明的第3實施方式進行說明。在本實施方式,就將上述的基板保持裝置應用於光刻裝置之例進行說明。光刻裝置方面,舉例如就基板進行曝光的曝光裝置、使用模具而使基板上的組成物成型的成型裝置(壓印裝 置、平坦化裝置)、使用帶電粒子束在基板上形成圖案的描繪裝置等。在以下,就將上述的基板保持裝置應用於曝光裝置之例進行說明。 A third embodiment of the present invention will be described. In this embodiment, an example in which the above-mentioned substrate holding device is applied to a photolithography apparatus will be described. In terms of photolithography equipment, there are, for example, exposure equipment for exposing a substrate, and molding equipment (imprint equipment) for molding a composition on a substrate using a mold. devices, planarization devices), drawing devices that use charged particle beams to form patterns on substrates, etc. Hereinafter, an example in which the above-mentioned substrate holding device is applied to an exposure device will be described.
圖10為就曝光裝置100的構成進行繪示的示意圖。曝光裝置100例如可包含照明光學系統101、遮罩台102、投影光學系統103、基板載台104、和控制部105。控制部105例如由具有CPU、記憶體等的電腦構成,控制曝光裝置100的各部分(控制基板W的曝光處理)。此外,控制部105可被構成為控制上述的排氣裝置30。
FIG. 10 is a schematic diagram illustrating the structure of the
照明光學系統101以從光源(未圖示)射出的照明光將遮罩M(原版)的一部分進行照明。照明光方面,例如可使用i射線(波長365nm)、g射線(波長436nm)、KrF光(波長248nm)、ArF光(波長193nm)等。遮罩台102被構成為可將遮罩M保持而移動於XY方向。投影光學系統103將形成於遮罩M的圖案之中,透過照明光學系統101而照明的一部分的像投影於基板W。基板載台104被構成為可將基板W保持而移動於XY方向。基板載台104例如包含保持基板的基板夾具104a、和將基板夾具104a(基板W)驅動於XY方向的基板驅動部104b。上述的第1實施方式的基板保持裝置10a或第2實施方式的基板保持裝置10b可用作為基板夾具104a。
The illumination
遮罩台102的位置是透過第1計測部106進行計測。第1計測部106包含例如雷射干涉計,對設於遮罩台102的反射鏡107照射光(雷射光),透過來自反射鏡107的
反射光而計測遮罩台102的位置。此外,基板載台104的位置是透過第2計測部108進行計測。第2計測部108包含例如雷射干涉計,對設於基板載台104的反射鏡109照射光(雷射光),透過來自反射鏡109的反射光而計測基板載台104的位置。
The position of the
透過遮罩台102保持的遮罩M與透過基板載台保持的基板W經由投影光學系統103而分別配置於光學共軛的位置(投影光學系統103的物面及像面)。控制部105根據第1計測部106及第2計測部108的計測結果,就遮罩台102與基板載台104以對應於投影光學系統103的投影倍率的速度比而相對地進行同步掃描。藉此,可將遮罩M的圖案轉印於基板上。
The mask M held through the
本發明之實施方式相關的物品之製造方法適於製造例如半導體裝置等之微型裝置、具有微細構造的元件等之物品。本實施方式的物品之製造方法包含對塗佈於基板的感光劑使用上述的光刻裝置(曝光裝置)在基板上形成圖案的形成程序、和將以形成程序形成圖案的基板進行加工的加工程序。再者,如此之製造方法包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式的物品之製造方法比起歷來的方法,在物品的性能、品質、生產性、生產成本中的至少一者方面有利。 The method of manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The manufacturing method of the article of this embodiment includes a forming process of forming a pattern on the substrate using the above-mentioned photolithography apparatus (exposure apparatus) on the photosensitive agent applied to the substrate, and a processing process of processing the substrate patterned by the forming process. . Furthermore, such manufacturing methods include other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method of manufacturing an article according to this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost compared to conventional methods.
發明不限於上述實施方式,在不從發明的精神及範圍脫離之下,可進行各種的變更及變形。因此,撰寫申請專利範圍以公開發明的範圍。 The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the patent application is drafted to disclose the scope of the invention.
10a:基板保持裝置 10a: Substrate holding device
11:基底 11: Base
11a:排氣孔 11a: Vent
11b:區域 11b: Area
12:隔牆構材 12: Partition wall member
13:支撐構材 13: Supporting member
14:第2支撐構材 14: Second supporting member
15:流道 15: Runner
Claims (12)
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JPS58191643U (en) * | 1982-06-15 | 1983-12-20 | 株式会社ニコン | sample stand |
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JPS60142036U (en) * | 1984-02-29 | 1985-09-20 | オムロン株式会社 | wafer jacket plate |
JP2800188B2 (en) * | 1988-07-20 | 1998-09-21 | 株式会社ニコン | Substrate suction device |
JP3106499B2 (en) * | 1990-11-30 | 2000-11-06 | 株式会社ニコン | Exposure equipment |
JPH05253853A (en) * | 1992-03-10 | 1993-10-05 | Sony Corp | Flake absorber and washing method for flake absorber |
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US5324012A (en) * | 1991-07-16 | 1994-06-28 | Nikon Corporation | Holding apparatus for holding an article such as a semiconductor wafer |
US20060209490A1 (en) * | 2005-02-24 | 2006-09-21 | Kyocera Corporation | Electrostatic chuck and wafer holding member and wafer treatment method |
TW200721366A (en) * | 2005-07-07 | 2007-06-01 | Sumitomo Electric Industries | Body for keeping a wafer, method of manufacturing the same and device using the same |
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US20160240414A1 (en) * | 2013-09-26 | 2016-08-18 | Suss Microtec Lithography Gmbh | Chuck for Suction and Holding a Wafer |
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