JP2020181871A - Substrate holding apparatus, lithography apparatus, and manufacturing method of article - Google Patents

Substrate holding apparatus, lithography apparatus, and manufacturing method of article Download PDF

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JP2020181871A
JP2020181871A JP2019083213A JP2019083213A JP2020181871A JP 2020181871 A JP2020181871 A JP 2020181871A JP 2019083213 A JP2019083213 A JP 2019083213A JP 2019083213 A JP2019083213 A JP 2019083213A JP 2020181871 A JP2020181871 A JP 2020181871A
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substrate
support member
holding device
substrate holding
lap portion
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JP7348744B2 (en
JP2020181871A5 (en
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将俊 島崎
Masatoshi Shimazaki
将俊 島崎
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Canon Inc
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Canon Inc
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Priority to KR1020200044440A priority patent/KR20200124604A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Jigs For Machine Tools (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

To provide an advantageous technique for efficiently holding a warped substrate.SOLUTION: A substrate holding device for holding a substrate includes a base having an exhaust hole on a facing surface facing the held substrate and a support member, projecting from the base, for supporting the substrate. The support member has a continuous spiral shape that circulates at least three times around a central portion of the facing surface. In a direction from the center to the outside, an interval between the (n+1)-th round portion and the (n+2)-th round portion is configured to be narrower than an interval between the n-th round portion (n is a natural number) and the (n+1)-th round portion.SELECTED DRAWING: Figure 1

Description

本発明は、基板保持装置、リソグラフィ装置、および物品の製造方法に関する。 The present invention relates to a substrate holding device, a lithography device, and a method for manufacturing an article.

近年における半導体デバイスや液晶表示装置などの製造工程では、半導体ウェハやガラスプレートなどの基板上に複数の層を堆積させたり、基板に対してストレスの強い膜や比較的厚い膜を形成したりすることがある。このような場合、基板に凹状の反りが生じうるため、リソグラフィ装置で基板上にパターンを形成する工程等において、基板保持装置（基板ステージ）に基板を正常に保持させることが困難になりうる。特許文献１には、チャック表面にウェハ吸着用の吸気溝と空気排出用の排気溝とを一定間隔で平行する渦巻状に形成し、排気溝の外周端を本体外縁に開口させることで、ウェハの適正な吸着と平面精度を向上させるウェハチャックプレートが開示されている。 In recent years, in the manufacturing process of semiconductor devices and liquid crystal display devices, a plurality of layers are deposited on a substrate such as a semiconductor wafer or a glass plate, or a stressful film or a relatively thick film is formed on the substrate. Sometimes. In such a case, since the substrate may be warped in a concave shape, it may be difficult for the substrate holding device (board stage) to normally hold the board in a step of forming a pattern on the board by a lithography device. In Patent Document 1, an intake groove for adsorbing a wafer and an exhaust groove for discharging air are formed in a spiral shape parallel to each other at regular intervals on the surface of the chuck, and the outer peripheral end of the exhaust groove is opened to the outer edge of the main body to form a wafer. Wafer chuck plates are disclosed that improve proper adsorption and planar accuracy.

実開昭６０−１４２０３６号公報Jitsukaisho 60-14203 No.

例えば凹状の反りが生じた基板は、外周部に向かうほど矯正しにくくなる。そのため、当該基板を基板保持装置で効率的に保持するには、基板の外周部に向かうほど、基板を吸引する力（吸引力）を大きくすることが好ましい。 For example, a substrate having a concave warp becomes more difficult to correct toward the outer peripheral portion. Therefore, in order to efficiently hold the substrate by the substrate holding device, it is preferable that the force for attracting the substrate (suction force) increases toward the outer peripheral portion of the substrate.

そこで、本発明は、反りが生じた基板を効率的に保持するために有利な技術を提供することを目的とする。 Therefore, an object of the present invention is to provide an advantageous technique for efficiently holding a warped substrate.

上記目的を達成するために、本発明の一側面としての基板保持装置は、基板を保持する基板保持装置であって、保持された前記基板に対向する対向面に排気孔を有するベースと、前記ベースから突出して前記基板を支持する支持部材と、を含み、前記支持部材は、前記対向面の中心部の周りを少なくとも３周した一続きの渦巻形状を有し、前記中心部から外側に向かう方向において、ｎ周目部分（ｎは自然数）とｎ＋１周目部分との間隔より、前記ｎ＋１周目部分とｎ＋２周目部分との間隔の方が狭くなるように構成されている、ことを特徴とする。 In order to achieve the above object, the substrate holding device as one aspect of the present invention is a substrate holding device that holds the substrate, and has a base having an exhaust hole on the facing surface facing the substrate and the above. The support member includes a support member protruding from the base and supporting the substrate, and the support member has a continuous spiral shape that circulates at least three times around the center portion of the facing surface, and extends outward from the center portion. In the direction, the distance between the n + 1 lap portion and the n + 2 lap portion is narrower than the distance between the n lap portion (n is a natural number) and the n + 1 lap portion. And.

本発明の更なる目的又はその他の側面は、以下、添付図面を参照して説明される好ましい実施形態によって明らかにされるであろう。 Further objects or other aspects of the invention will be manifested in the preferred embodiments described below with reference to the accompanying drawings.

本発明によれば、例えば、反りが生じた基板を効率的に保持するために有利な技術を提供することができる。 According to the present invention, for example, it is possible to provide an advantageous technique for efficiently holding a warped substrate.

第１実施形態の基板保持装置の構成を示す概略図The schematic diagram which shows the structure of the substrate holding apparatus of 1st Embodiment 第１実施形態の基板保持装置の構成を示す断面図Sectional drawing which shows the structure of the substrate holding apparatus of 1st Embodiment 従来の基板保持装置における基板の保持過程を示す図The figure which shows the board holding process in the conventional board holding device 基板保持装置の構成例を説明するための図The figure for demonstrating the configuration example of the board holding apparatus 支持部材における渦巻形状の周回数を示す図The figure which shows the number of times of the spiral shape in the support member 支持部材における流路幅を示す図The figure which shows the flow path width in a support member 基板の反りを示す図The figure which shows the warp of a substrate 基板の吸引力を維持させるために必要な流路幅を示す図The figure which shows the flow path width required to maintain the suction force of a substrate. 第２実施形態の基板保持装置の構成を示す概略図The schematic diagram which shows the structure of the substrate holding apparatus of 2nd Embodiment 露光装置の構成を示す概略図Schematic diagram showing the configuration of the exposure apparatus

以下、添付図面を参照して実施形態を詳しく説明する。尚、以下の実施形態は特許請求の範囲に係る発明を限定するものではない。実施形態には複数の特徴が記載されているが、これらの複数の特徴の全てが発明に必須のものとは限らず、また、複数の特徴は任意に組み合わせられてもよい。さらに、添付図面においては、同一若しくは同様の構成に同一の参照番号を付し、重複した説明は省略する。 Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiment, not all of the plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the attached drawings, the same or similar configurations are designated by the same reference numbers, and duplicate description is omitted.

＜第１実施形態＞
本発明に係る第１実施形態の基板保持装置１０ａの構成について説明する。基板保持装置１０ａは、半導体ウェハやガラスプレートなどの基板Ｗを保持するための装置であり、例えば、ベース１１と、隔壁部材１２と、支持部材１３とを含みうる。本実施形態では、半導体ウェハなどの円形の基板Ｗを保持する基板保持装置１０ａの構成例について説明する。図１は、本実施形態の基板保持装置１０ａを上方（＋Ｚ方向側）から見た図であり、図２は、図１に示す基板保持装置１０ａのＡ−Ａ断面図である。また、各図では、水平面において互いに直交する方向をＸ方向およびＹ方向とし、鉛直方向をＺ方向とする。 <First Embodiment>
The configuration of the substrate holding device 10a of the first embodiment according to the present invention will be described. The substrate holding device 10a is a device for holding a substrate W such as a semiconductor wafer or a glass plate, and may include, for example, a base 11, a partition wall member 12, and a support member 13. In this embodiment, a configuration example of a substrate holding device 10a for holding a circular substrate W such as a semiconductor wafer will be described. FIG. 1 is a view of the substrate holding device 10a of the present embodiment viewed from above (+ Z direction side), and FIG. 2 is a sectional view taken along the line AA of the substrate holding device 10a shown in FIG. Further, in each figure, the directions orthogonal to each other in the horizontal plane are the X direction and the Y direction, and the vertical direction is the Z direction.

ベース１１は、基板保持装置１０ａにより基板Ｗが正常に保持されたときに当該基板Ｗに対向する対向面（＋Ｚ方向側の面）を有し、当該対向面に排気孔１１ａを有する。排気孔１１ａは、図２に示すように、真空ポンプなどの排気装置３０と連通しており、排気装置３０を制御して排気孔１１ａから気体を排出することにより、ベース１１の上に配置された基板Ｗをチャック（吸引）することができる。本実施形態の場合、図１に示すように、ベース１１には、図１に示すように、基板Ｗの中心部が配置される位置に複数（３個）の排気孔１１ａが設けられている。なお、排気孔１１ａの数は３個に限られるものではなく、１〜２個または４個以上であってもよい。 The base 11 has a facing surface (a surface on the + Z direction side) facing the substrate W when the substrate W is normally held by the substrate holding device 10a, and has an exhaust hole 11a on the facing surface. As shown in FIG. 2, the exhaust hole 11a communicates with an exhaust device 30 such as a vacuum pump, and is arranged on the base 11 by controlling the exhaust device 30 and discharging gas from the exhaust hole 11a. The substrate W can be chucked (sucked). In the case of the present embodiment, as shown in FIG. 1, the base 11 is provided with a plurality (three) exhaust holes 11a at positions where the central portion of the substrate W is arranged, as shown in FIG. .. The number of exhaust holes 11a is not limited to three, and may be one, two, or four or more.

隔壁部材１２は、基板Ｗの外周部を支持するように、ベース１から＋Ｚ方向に突出した部材である。隔壁部材１２は、基板保持装置１０ａにより基板Ｗが正常に保持されたときに基板Ｗとベース１１との間に密閉空間が形成されるように、基板Ｗの外周部に沿った形状（本実施形態ではリング状）に構成されうる。 The partition wall member 12 is a member that projects in the + Z direction from the base 1 so as to support the outer peripheral portion of the substrate W. The partition wall member 12 has a shape along the outer peripheral portion of the substrate W so that a closed space is formed between the substrate W and the base 11 when the substrate W is normally held by the substrate holding device 10a (this embodiment). It can be configured in a ring shape).

支持部材１３は、隔壁部材１２の内側において基板Ｗを支持するように、ベース１１から＋Ｚ方向に突出した部材である。支持部材１３は、図１に示すように、ベース上において、ベース１１の対向面の中心部の周りを少なくとも３周した一続き（連続した）渦巻形状を有する。本実施形態の場合、排気孔１１ａを含む領域１１ｂ（以下では、「中央領域１１ｂ」と呼ぶことがある）を中心として少なくとも３周した一続きの渦巻形状を有する。そして、支持部材１３の一方の端部は複数の排気孔１１ａの間（具体的には、ベース１１の対向面の重心、隔壁部材１２の重心）に位置し、支持部材１３の他方の端部は隔壁部材１２に接続される。このように支持部材１３を渦巻形状に構成することで、排気孔１１ａから排出される気体の流路１５が渦巻形状に構成されるため、基板Ｗを、その中心部から外周部に向かって徐々に保持（吸引）することができる。 The support member 13 is a member that projects in the + Z direction from the base 11 so as to support the substrate W inside the partition wall member 12. As shown in FIG. 1, the support member 13 has a continuous (continuous) spiral shape on the base, which makes at least three rounds around the center of the facing surface of the base 11. In the case of the present embodiment, it has a continuous spiral shape that circulates at least three times around the region 11b including the exhaust hole 11a (hereinafter, may be referred to as "central region 11b"). Then, one end of the support member 13 is located between the plurality of exhaust holes 11a (specifically, the center of gravity of the facing surface of the base 11 and the center of gravity of the partition wall member 12), and the other end of the support member 13. Is connected to the partition member 12. By forming the support member 13 in a spiral shape in this way, the flow path 15 of the gas discharged from the exhaust hole 11a is formed in a spiral shape, so that the substrate W is gradually moved from the central portion to the outer peripheral portion. Can be held (sucked) in.

また、基板保持装置１０ａは、保持後の基板Ｗの撓みを低減するため、図１に示すように、隔壁部材１２の内側（例えば、支持部材１３の間）におけるベース１１上に、複数のピン形状や細長いリブ形状で構成された第２支持部材１４を有してもよい。図１に示す例では、図を分かり易くするため、複数のピン形状で構成された第２支持部材１４が、隔壁部材１２の内側の一部にだけ設けられているが、第２支持部材１４は隔壁部材１２の内側の全体に対して設けられうる。 Further, in order to reduce the deflection of the substrate W after holding, the substrate holding device 10a has a plurality of pins on the base 11 inside the partition wall member 12 (for example, between the support members 13) as shown in FIG. The second support member 14 having a shape or an elongated rib shape may be provided. In the example shown in FIG. 1, in order to make the figure easier to understand, the second support member 14 formed of a plurality of pin shapes is provided only on a part of the inside of the partition wall member 12, but the second support member 14 Can be provided for the entire inside of the partition member 12.

このように渦巻形状に構成された支持部材１３を有する基板保持装置１０ａでは、複数の層が堆積されたり比較的厚い膜が形成されたりして凹状の反りが生じた基板Ｗを、当該反りを矯正しながら保持することができる。例えば、凹状の反りが生じた基板Ｗは、基板保持装置１０ａに搬送された直後では、基板Ｗの中心部は支持部材１３に接触しているが、基板Ｗの外周部は支持部材１３に対して浮いた（離間した）状態である。この状態で排気装置３０を制御し、排気孔１１ａにより基板Ｗとベース１１との間の排気を開始すると、まず基板Ｗの中心部が保持（吸引）され、それから、支持部材１３により渦巻形状に構成された流路１５に沿って基板Ｗが徐々に保持（吸引）されていく。このように、基板保持装置１０ａは、渦巻形状に構成された流路１５に沿って、基板Ｗの中心部から外周部に向かって徐々に吸引し、基板Ｗの反りを矯正しながら保持することができる。 In the substrate holding device 10a having the support member 13 formed in a spiral shape as described above, the substrate W in which a plurality of layers are deposited or a relatively thick film is formed to cause a concave warp is subjected to the warp. It can be held while being corrected. For example, immediately after the substrate W having a concave warp is conveyed to the substrate holding device 10a, the central portion of the substrate W is in contact with the support member 13, but the outer peripheral portion of the substrate W is relative to the support member 13. It is in a floating (separated) state. When the exhaust device 30 is controlled in this state and the exhaust between the substrate W and the base 11 is started by the exhaust hole 11a, the central portion of the substrate W is first held (sucked), and then the support member 13 forms a spiral shape. The substrate W is gradually held (sucked) along the configured flow path 15. In this way, the substrate holding device 10a gradually sucks from the central portion to the outer peripheral portion of the substrate W along the flow path 15 formed in a spiral shape, and holds the substrate W while correcting the warp. Can be done.

また、凹状の反りが生じている基板Ｗは、外周部に向かうほど矯正しにくくなる。そのため、基板保持装置１０ａにより基板Ｗの反りを矯正しながら基板Ｗを効率的に保持するためには、基板Ｗの外周部に向かうほど、基板Ｗを吸引する力（吸引力）を大きくすることが好ましい。吸引力を大きくする方法としては、例えば、排気装置３０を増設したり排気装置３０の排気量を増加させたりする方法が挙げられるが、これらの方法では装置が複雑化して大掛かりになりうる。 Further, the substrate W in which the concave warp is generated becomes more difficult to correct toward the outer peripheral portion. Therefore, in order to efficiently hold the substrate W while correcting the warp of the substrate W by the substrate holding device 10a, the force for sucking the substrate W (suction force) is increased toward the outer peripheral portion of the substrate W. Is preferable. Examples of the method of increasing the suction force include a method of adding an exhaust device 30 and an increase of the exhaust amount of the exhaust device 30, but these methods can complicate the device and become large-scale.

そこで、本実施形態の基板保持装置１０ａでは、支持部材１３は、図２に示すように、ｎ周目部分とｎ＋１周目部分との間隔（流路幅ｗｎ）より、ｎ＋１周目部分とｎ＋２周目部分との間隔（流路幅ｗｎ＋１）の方が狭くなるように構成されている。例えば、支持部材１３は、ｎ周目部分とｎ＋１周目部分との間隔が外側に向かうにつれて狭くなるように構成されている。なお、「ｎ」は、渦巻形状に構成された支持部材１３の周回数を示しており、１以上の自然数である。このように構成された基板保持装置１０ａでは、凹状の反りが生じた基板Ｗを保持する際に、基板Ｗの外周部に向かうほど基板Ｗの吸引力を大きくすることができるため、基板Ｗの反りを矯正しながら基板Ｗを効率的に保持することができる。 Therefore, the substrate holding apparatus 10a of the present embodiment, the support member 13, as shown in FIG. 2, from the distance between the n-th revolution part and (n + 1) -th revolution part (channel width w n), and n + 1 lap portion The distance (flow path width w n + 1 ) from the n + second lap portion is configured to be narrower. For example, the support member 13 is configured so that the distance between the nth peripheral portion and the n + 1th peripheral portion becomes narrower toward the outside. In addition, "n" indicates the number of times of rotation of the support member 13 formed in a spiral shape, and is a natural number of 1 or more. In the substrate holding device 10a configured in this way, when holding the substrate W in which the concave warp has occurred, the attractive force of the substrate W can be increased toward the outer peripheral portion of the substrate W, so that the substrate W can be attracted to the substrate W. The substrate W can be efficiently held while correcting the warp.

例えば、支持部材１３は、ｎ＋１周目部分とｎ＋２周目部分との間隔（流路幅ｗｎ＋１）が、ｎ周目部分とｎ＋１周目部分との間隔（流路幅ｗｎ）に対して６０〜９５％の範囲内になるように構成されるとよい。より好ましくは、支持部材１３は、ｎ＋１周目部分とｎ＋２周目部分との間隔（流路幅ｗｎ＋１）が、ｎ周目部分とｎ＋１周目部分との間隔（流路幅ｗｎ）に対して７５〜８５％の範囲内になる箇所を含むように構成されるとよい。 For example, in the support member 13, the distance between the n + 1th lap portion and the n + 2nd lap portion (flow path width w n + 1 ) is relative to the distance between the nth lap portion and the n + 1th lap portion (flow path width w n ). It should be configured to be in the range of 60 to 95%. More preferably, in the support member 13, the distance between the n + 1th lap portion and the n + 2nd lap portion (flow path width w n + 1 ) is set to the distance between the nth lap portion and the n + 1th lap portion (flow path width w n ). On the other hand, it may be configured to include a portion within the range of 75 to 85%.

［基板Ｗの平面矯正の原理］
本実施形態の基板保持装置１０ａが基板Ｗを矯正しながら効率的に保持することができる原理について、リング形状の支持部材を有する従来の基板保持装置５０と比較しながら説明する。 [Principle of plane correction of substrate W]
The principle that the substrate holding device 10a of the present embodiment can efficiently hold the substrate W while correcting it will be described in comparison with the conventional substrate holding device 50 having a ring-shaped support member.

図３は、従来の基板保持装置５０における基板Ｗの保持過程を示す図である。図３（ａ）は、従来の基板保持装置５０を上方（＋Ｚ方向）から見た図であり、図３（ｂ）〜（ｃ）は、図３（ａ）に示す従来の基板保持装置５０のＢ−Ｂ断面図である。従来の基板保持装置５０は、図３（ａ）に示すように、例えば、ベース５１と、基板Ｗの外周部を支持するリング状の隔壁部材５２と、隔壁部材５２の内側において基板Ｗを支持するリング状の複数の支持部材５３とを有する。ベース５１には、リング状の複数の支持部材５３の間に排気孔５１ａが設けられている。 FIG. 3 is a diagram showing a holding process of the substrate W in the conventional substrate holding device 50. FIG. 3A is a view of the conventional substrate holding device 50 viewed from above (+ Z direction), and FIGS. 3B to 3C are the conventional substrate holding device 50 shown in FIG. 3A. It is a BB cross-sectional view of. As shown in FIG. 3A, the conventional substrate holding device 50 supports, for example, the base 51, the ring-shaped partition wall member 52 that supports the outer peripheral portion of the substrate W, and the substrate W inside the partition wall member 52. It has a plurality of ring-shaped support members 53. The base 51 is provided with an exhaust hole 51a between a plurality of ring-shaped support members 53.

このように構成された従来の基板保持装置５０では、凹状の反りを有する基板Ｗを、その中心部から外周部に向かって徐々に保持していく過程において、基板Ｗと基板保持装置５０との隙間から気体が流入する。このような隙間の面積は、隙間の高さを「ｈ」で規定すると、図３（ｂ）に示すように半径ｒ１の位置で基板Ｗを保持する場合には２π×ｒ１×ｈとなる。また、図３（ｃ）に示すように、半径ｒ１より大きい半径ｒ２の位置で基板Ｗを保持する場合には２π×ｒ２×ｈとなる。この場合では、図３（ｂ）のときより基板Ｗの保持位置での円周が大きくなることで隙間の面積が増えるため、その分、気体の流速が低下し、それに伴い基板Ｗの吸引力も低下しうる。つまり、基板Ｗの保持位置が基板Ｗの外周部に向かうほど、基板Ｗを矯正して保持することが困難になりうる。 In the conventional substrate holding device 50 configured in this way, the substrate W and the substrate holding device 50 are in the process of gradually holding the substrate W having a concave warp from the central portion to the outer peripheral portion thereof. Gas flows in through the gap. When the height of the gap is defined by "h", the area of such a gap is 2π × r1 × h when the substrate W is held at the position of the radius r1 as shown in FIG. 3 (b). Further, as shown in FIG. 3C, when the substrate W is held at a position having a radius r2 larger than the radius r1, the value is 2π × r2 × h. In this case, since the circumference of the substrate W at the holding position becomes larger than that in FIG. 3B, the area of the gap increases, so that the flow velocity of the gas decreases by that amount, and the suction force of the substrate W also increases accordingly. Can decrease. That is, as the holding position of the substrate W approaches the outer peripheral portion of the substrate W, it may become difficult to correct and hold the substrate W.

一方、渦巻形状の支持部材１３を有する本実施形態の基板保持装置１０ａでは、凹状の反りを有する基板Ｗを、その中心部から外周部に向かって徐々に保持していく過程において、ベース１１と支持部材１３と基板Ｗとで規定される流路１５から気体が流入する。つまり、気体が流入する隙間の面積は、基板Ｗを保持する位置の半径に依存せずに、支持部材１３のｎ周目部分とｎ＋１周目部分との間隔（流路幅Ｗｎ）に依存することとなる。例えば、図４の一点鎖線で示す位置Ｐで基板Ｗの保持を行う場合、気体が流入する隙間の面積は（ｒｎ＋１−ｒｎ）×ｈとなる。「ｒｎ」はｎ周目部分の半径を示し、「ｒｎ＋１」はｎ＋１周目部分の半径を示している。 On the other hand, in the substrate holding device 10a of the present embodiment having the spiral-shaped support member 13, in the process of gradually holding the substrate W having a concave warp from the central portion to the outer peripheral portion, the substrate 11 and the base 11 are held. Gas flows in from the flow path 15 defined by the support member 13 and the substrate W. That is, the area of the gap through which the gas flows does not depend on the radius of the position where the substrate W is held, but depends on the distance (flow path width W n ) between the nth peripheral portion and the n + 1th peripheral portion of the support member 13. Will be done. For example, when the holding of the substrate W at the position P indicated by a chain line in FIG. 4, the area of the gap gas flows becomes (r n + 1 -r n) × h. “R n ” indicates the radius of the nth lap portion, and “rn + 1 ” indicates the radius of the n + 1th lap portion.

本実施形態の場合、支持部材１３におけるｎ周目部分とｎ＋１周目部分との間隔（流路幅Ｗｎ）は、外側に向かうにつれて狭くなっている。即ち、基板Ｗの保持位置が基板Ｗの外周部に向かうほど、ｎ周目部分とｎ＋１周目部分とで規定される流路１５の断面積が小さくなる。そのため、基板Ｗの保持位置が基板Ｗの外周部に向かうほど、気体の流速を増加させ、それに伴い基板Ｗの吸引力も増加させることができる。これにより、凹状の反りが著しく生じている基板Ｗであっても、基板Ｗを矯正しながら外周部まで効率的に且つ確実に保持することができる。 In the case of the present embodiment, the distance (flow path width W n ) between the nth peripheral portion and the n + 1th peripheral portion of the support member 13 becomes narrower toward the outside. That is, as the holding position of the substrate W approaches the outer peripheral portion of the substrate W, the cross-sectional area of the flow path 15 defined by the nth peripheral portion and the n + 1th peripheral portion becomes smaller. Therefore, as the holding position of the substrate W approaches the outer peripheral portion of the substrate W, the flow velocity of the gas can be increased, and the suction force of the substrate W can be increased accordingly. As a result, even the substrate W in which the concave warp is remarkably generated can be efficiently and surely held up to the outer peripheral portion while correcting the substrate W.

［支持部材の構成例］
次に、渦巻形状を有する支持部材１３の具体的な構成例について説明する。
支持部材１３の渦巻形状は、例えば渦巻曲線（螺旋曲線）によって表されうる。渦巻曲線は、図４に示すように、隔壁部材１２の重心を原点とした極座標系におけるｎ周目部分までのベクトル長（半径ベクトル長）をｒｎ、半径ベクトルの回転角をθとした場合、ｒｎ＝ａ×θｂの式で表される。この式において、定数ａは、支持部材１３の１周目部分の寸法（例えば、径の大きさ）を規定するための値である。また、定数ｂは、回転角θに対するｎ周目部分とｎ＋１周目部分との間隔（流路幅Ｗｎ）の減少率を規定するための定数である。定数ｂは、０より大きく１より小さい場合（０＜ｂ＜１）には、外側に向かうほど流路幅Ｗｎが狭まり、１に等しい場合（ｂ＝１）には、半径方向において一定の流路幅Ｗｎとなり、１より大きい場合（ｂ＞１）には、外側に向かうほど流路幅Ｗｎが広がる。本実施形態の支持部材１３は、外側に向かうにつれて流路幅Ｗｎが狭くなるように構成されるため、定数ｂは、０＜ｂ＜１を満たすように設定されうる。定数ａおよび定数ｂは、任意に設定可能であるが、保持対象となる基板Ｗの反りの形状、反りの量、基板Ｗの大きさ、排気孔１１ａからの排気量に応じて適宜設定されうる。 [Structure example of support member]
Next, a specific configuration example of the support member 13 having a spiral shape will be described.
The spiral shape of the support member 13 can be represented by, for example, a spiral curve (spiral curve). The spiral curve, as shown in FIG. 4, if the vector length of the center of gravity of the partition member 12 to the n peripheral portion in the polar coordinate system whose origin (the radius vector length) was r n, the rotation angle of the radius vector θ , R n = a × θ b . In this equation, the constant a is a value for defining the size (for example, the size of the diameter) of the first peripheral portion of the support member 13. Further, the constant b is a constant for defining the reduction rate of the interval (flow path width W n ) between the nth lap portion and the n + 1th lap portion with respect to the rotation angle θ. Constant b, if more than 0 less than 1 (0 <b <1), narrows the flow path width W n increases toward the outside, if equal to 1 (b = 1), the constant in the radial direction When the flow path width W n is greater than 1 (b> 1), the flow path width W n increases toward the outside. Support member 13 of the present embodiment, since it is configured to channel width W n is narrowed toward the outer side, the constant b may be set to satisfy 0 <b <1. The constant a and the constant b can be arbitrarily set, but can be appropriately set according to the shape of the warp of the substrate W to be held, the amount of warpage, the size of the substrate W, and the amount of exhaust gas from the exhaust hole 11a. ..

例えば、ａ＝２５、ｂ＝０．５とした場合、支持部材１３における渦巻形状の周回数は、図５に示すように５周となり、支持部材１３におけるｎ周目部分とｎ＋１周目部分と間隔（流路幅Ｗｎ）は、図６に示すように、外側に向かうほど減少する。ここで、図６に示す例では、半径ベクトル長ｒｎが６２．９［ｍｍ］以下となる範囲では流路幅Ｗｎが単調増加しているが、これは、６２．９［ｍｍ］までは１周目部分であり、その値から２周目部分が開始することを示している。本実施形態の支持部材１３は、ｎ周目部分とｎ＋１周目部分との間隔（流路幅Ｗｎ）が外側に向かうにつれて狭くなる構成であり、「ｎ」は１以上の自然数である。つまり、本実施形態の支持部材１３では、２周目部分が開始して、１周目部分と２周目部分との間に流路１５が形成される回転角θから、即ち、半径ベクトル長ｒｎ＝６２．９［ｍｍ］以降において流路幅Ｗｎが徐々に減少するように構成される。 For example, when a = 25 and b = 0.5, the number of laps of the spiral shape in the support member 13 is 5 as shown in FIG. 5, and the nth lap portion and the n + 1 lap portion of the support member 13 As shown in FIG. 6, the interval (flow path width W n ) decreases toward the outside. In the example shown in FIG. 6, but the channel width W n in the range of the radius vector length r n is 62.9 [mm] or less is increasing monotonically, this is up to 62.9 [mm] Is the first lap portion, and indicates that the second lap portion starts from that value. The support member 13 of the present embodiment has a configuration in which the distance (flow path width W n ) between the nth peripheral portion and the n + 1th peripheral portion becomes narrower toward the outside, and “n” is a natural number of 1 or more. That is, in the support member 13 of the present embodiment, the radius vector length is from the rotation angle θ where the second lap portion starts and the flow path 15 is formed between the first lap portion and the second lap portion. r n = 62.9 [mm] configured channel width W n is gradually decreased in the following.

一方、基板Ｗの反りの形状は、半導体製造工程で成膜・熱処理を行う過程において、一般的に放物面形状となる。放物面形状は、中心を通る平面状のある一軸で断面を切った場合に、高さｚ、半径ｒ、反り形状の曲率をｃとした場合、ｚ＝ｃ×ｒ２の式で表される。この場合、このような反り形状を有する基板Ｗは、基板保持装置１０ａ（支持部材１３）の上に配置しただけの状態では、図７に示すように、基板Ｗの外周部に向かうほど基板保持装置１０ａと基板Ｗとの隙間が大きくなる。つまり、基板Ｗを矯正することができる負圧を当該隙間に形成することが基板Ｗの外周部に向かうほど困難になり、基板Ｗの矯正を行いにくくなる。 On the other hand, the warped shape of the substrate W is generally a parabolic shape in the process of film formation and heat treatment in the semiconductor manufacturing process. The paraboloidal shape is expressed by the equation z = c × r 2 when the cross section is cut along a flat axis passing through the center and the height z, radius r, and curvature of the warped shape are c. To. In this case, when the substrate W having such a warped shape is simply arranged on the substrate holding device 10a (support member 13), as shown in FIG. 7, the substrate W is held toward the outer peripheral portion of the substrate W. The gap between the device 10a and the substrate W becomes large. That is, it becomes more difficult to form a negative pressure in the gap that can correct the substrate W toward the outer peripheral portion of the substrate W, and it becomes difficult to correct the substrate W.

このような反り形状を有する基板Ｗを矯正しながら保持する場合、基板Ｗの外周部に向かうほど、基板Ｗの吸引力を大きくすることが好ましい。しかしながら、排気装置３０の排気量に制限があり、排気装置３０を増設することは装置の複雑化や装置コストの増加を招いてしまう。そのため、本実施形態の基板保持装置１０ａでは、排気装置３０の排気量に制限がある中で吸引力を増加させるため、基板Ｗの外周部に向かうにつれて流路幅Ｗｎを狭めていくことにより、基板Ｗと基板保持装置１０との間における気体の流速を増加させている。 When the substrate W having such a warped shape is held while being corrected, it is preferable that the suction force of the substrate W is increased toward the outer peripheral portion of the substrate W. However, the exhaust amount of the exhaust device 30 is limited, and adding the exhaust device 30 causes the device to become complicated and the device cost to increase. Therefore, the substrate holding apparatus 10a of the present embodiment, in order to increase the suction force in with limited exhaust amount of the exhaust device 30, by narrowing down the flow path width W n toward the outer peripheral portion of the substrate W , The flow velocity of the gas between the substrate W and the substrate holding device 10 is increased.

基板Ｗと基板保持装置１０ａとの隙間は、図７に示すように、基板Ｗの外周部に向かうほど半径ベクトル長ｒｎの二乗（ｒ２）で広くなるため、当該隙間における気体の流速が１／ｒ２に低下し、吸引力が１／ｒ４に低下する。したがって、基板Ｗの外周部に向かっても吸引力を維持させるためには、流路幅を１／ｒ２以上の比率で減少させることが好ましい。これにより、外周部に向かうほど低下する基板Ｗの吸引力を補償し（即ち、吸引力を維持させ）、基板Ｗを矯正しながら効率よく保持することができる。具体的には、流路幅Ｗｎを、Ｗｎ＝（ｒｎ＋１−ｒｎ）と規定した場合、基板Ｗの吸引力を維持させるためには、Ｗｎ／（ｒｎ／ｋ）２≦（ａ×（θ＋２π）ｂ−ａ×θｂ）の条件を満たす必要がある。上記の式において、「ｒｎ」は、ｎ周目部分の半径ベクトル長を示し、「ｒｎ＋１」は、ｎ＋１周目部分の半径ベクトル長を示している。また、「ｋ」は、支持部材１３の１周目部分の寸法（例えば半径ベクトル長）を示している。例えば、ａ＝２５、ｂ＝０．５とした場合、基板Ｗの吸引力を維持させるために必要な流路幅Ｗｎは、図８に示すようになる。 The gap between the substrate W and the substrate holding apparatus 10a, as shown in FIG. 7, to become wider with the square of the radius vector length r n increases toward the outer periphery of the substrate W (r 2), the flow velocity of the gas in the gap It decreases to 1 / r 2 and the suction force decreases to 1 / r 4 . Therefore, in order to maintain the suction force toward the outer peripheral portion of the substrate W, it is preferable to reduce the flow path width at a ratio of 1 / r 2 or more. As a result, the suction force of the substrate W, which decreases toward the outer peripheral portion, can be compensated (that is, the suction force is maintained), and the substrate W can be efficiently held while being corrected. Specifically, the channel width W n, W n = if defined (r n + 1 -r n) and, in order to maintain the suction force of the substrate W, W n / (r n / k) 2 ≦ It is necessary to satisfy the condition of (a × (θ + 2π) b −a × θ b ). In the above formula, "r n" represents a radius vector length of the n-th revolution portion, "r n + 1" represents a radius vector length of n + 1 lap portion. Further, "k" indicates the dimension (for example, radius vector length) of the first peripheral portion of the support member 13. For example, when a = 25 and b = 0.5, the flow path width W n required to maintain the suction force of the substrate W is as shown in FIG.

上述したように、本実施形態の基板保持装置１０ａは、渦巻形状を有する支持部材１３を有しており、支持部材１３におけるｎ周目部分とｎ＋１周目部分との間隔（流路幅Ｗｎ）が外側に向かうにつれて狭くなるように構成されている。これにより、凹状の反りが生じている基板Ｗであっても、基板Ｗの外周部に向かうにつれて吸引力を増加させ、当該基板Ｗを矯正しながら効率的に保持することができる。 As described above, the substrate holding device 10a of the present embodiment has the support member 13 having a spiral shape, and the distance between the nth peripheral portion and the n + 1th peripheral portion of the support member 13 (flow path width Wn ). ) Is configured to become narrower toward the outside. As a result, even if the substrate W has a concave warp, the suction force can be increased toward the outer peripheral portion of the substrate W, and the substrate W can be efficiently held while being corrected.

＜第２実施形態＞
本発明に係る第２実施形態の基板保持装置１０ｂについて説明する。本実施形態の基板保持装置１０ｂは、第１実施形態の基板保持装置１０ａの構成を基本的に引き継ぐものであるが、隔壁部材１２および支持部材１３の形状が異なる。具体的には、第１実施形態の基板保持装置１０ａは、例えば半導体ウェハなどの円形の基板Ｗを保持するために円形状に構成されているが、本実施形態の基板保持装置１０ｂは、例えばガラスプレートなどの矩形の基板Ｗを保持するために矩形状に構成されている。 <Second Embodiment>
The substrate holding device 10b of the second embodiment according to the present invention will be described. The substrate holding device 10b of the present embodiment basically inherits the configuration of the substrate holding device 10a of the first embodiment, but the shapes of the partition wall member 12 and the support member 13 are different. Specifically, the substrate holding device 10a of the first embodiment is configured in a circular shape for holding a circular substrate W such as a semiconductor wafer, but the substrate holding device 10b of the present embodiment is, for example, It is formed in a rectangular shape to hold a rectangular substrate W such as a glass plate.

図９は、本実施形態の基板保持装置１０ｂを上方（＋Ｚ方向）から見た図である。図９に示すように、本実施形態の基板保持装置１０ｂでは、隔壁部材１２および支持部材１３が矩形状に構成されている。この場合においても、第１実施形態と同様に、凹状の反りが生じている基板Ｗであっても、基板Ｗの外周部に向かうにつれて吸引力を増加させ、当該基板Ｗを矯正しながら効率的に保持することができる。 FIG. 9 is a view of the substrate holding device 10b of the present embodiment as viewed from above (+ Z direction). As shown in FIG. 9, in the substrate holding device 10b of the present embodiment, the partition wall member 12 and the support member 13 are formed in a rectangular shape. In this case as well, as in the first embodiment, even if the substrate W has a concave warp, the suction force is increased toward the outer peripheral portion of the substrate W, and the substrate W is corrected efficiently. Can be held in.

＜第３実施形態＞
本発明に係る第３実施形態について説明する。本実施形態では、上記の基板保持装置をリソグラフィ装置に適用した例について説明する。リソグラフィ装置としては、例えば、基板を露光する露光装置、型を用いて基板上の組成物を成形する成形装置（インプリント装置、平坦化装置）、荷電粒子線を用いて基板上にパターンを形成する描画装置などが挙げられる。以下では、上記の基板保持装置を露光装置に適用する例について説明する。 <Third Embodiment>
A third embodiment according to the present invention will be described. In this embodiment, an example in which the above-mentioned substrate holding device is applied to a lithography device will be described. Examples of the lithography apparatus include an exposure apparatus that exposes a substrate, a molding apparatus (imprinting apparatus, flattening apparatus) that forms a composition on a substrate using a mold, and a pattern formed on a substrate using a charged particle beam. For example, a drawing device for drawing. An example of applying the above-mentioned substrate holding device to an exposure device will be described below.

図１０は、露光装置１００の構成を示す概略図である。露光装置１００は、例えば、照明光学系１０１と、マスクステージ１０２と、投影光学系１０３と、基板ステージ１０４と、制御部１０５とを含みうる。制御部１０５は、例えばＣＰＵやメモリ等を有するコンピュータによって構成され、露光装置１００の各部を制御する（基板Ｗの露光処理を制御する）。また、制御部１０５は、上述した排気装置３０を制御するように構成されうる。 FIG. 10 is a schematic view showing the configuration of the exposure apparatus 100. The exposure apparatus 100 may include, for example, an illumination optical system 101, a mask stage 102, a projection optical system 103, a substrate stage 104, and a control unit 105. The control unit 105 is composed of, for example, a computer having a CPU, a memory, or the like, and controls each unit of the exposure apparatus 100 (controls the exposure process of the substrate W). Further, the control unit 105 may be configured to control the exhaust device 30 described above.

照明光学系１０１は、光源（不図示）から射出された照明光でマスクＭ（原版）の一部を照明する。照明光としては、例えば、ｉ線（波長３６５ｎｍ）やｇ線（波長４３６ｎｍ）、ＫｒＦ光（波長２４８ｎｍ）、ＡｒＦ光（波長１９３ｎｍ）などが用いられうる。マスクステージ１０２は、マスクＭを保持してＸＹ方向に移動可能に構成される。投影光学系１０３は、マスクＭに形成されたパターンのうち、照明光学系１０１によって照明された一部の像を基板Ｗに投影する。基板ステージ１０４は、基板Ｗを保持してＸＹ方向に移動可能に構成される。基板ステージ１０４は、例えば、基板を保持する基板チャック１０４ａと、基板チャック１０４ａ（基板Ｗ）をＸＹ方向に駆動する基板駆動部１０４ｂとを含む。上述した第１実施形態の基板保持装置１０ａまたは第２実施形態の基板保持装置１０ｂは、基板チャック１０４ａとして適用されうる。 The illumination optical system 101 illuminates a part of the mask M (original plate) with the illumination light emitted from the light source (not shown). As the illumination light, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), KrF light (wavelength 248 nm), ArF light (wavelength 193 nm) and the like can be used. The mask stage 102 holds the mask M and is configured to be movable in the XY directions. The projection optical system 103 projects a part of the pattern formed on the mask M, which is illuminated by the illumination optical system 101, onto the substrate W. The substrate stage 104 is configured to hold the substrate W and be movable in the XY directions. The board stage 104 includes, for example, a board chuck 104a for holding the board and a board driving unit 104b for driving the board chuck 104a (board W) in the XY directions. The substrate holding device 10a of the first embodiment or the substrate holding device 10b of the second embodiment described above can be applied as the substrate chuck 104a.

マスクステージ１０２の位置は、第１計測部１０６によって計測される。第１計測部１０６は、例えばレーザ干渉計を含み、マスクステージ１０２に設けられたミラー１０７に光（レーザ光）を照射し、ミラー１０７からの反射光によってマスクステージ１０２の位置を計測する。また、基板ステージ１０４の位置は、第２計測部１０８によって計測される。第２計測部１０８は、例えばレーザ干渉計を含み、基板ステージ１０４に設けられたミラー１０９に光（レーザ光）を照射し、ミラー１０９からの反射光によって基板ステージ１０４の位置を計測する。 The position of the mask stage 102 is measured by the first measuring unit 106. The first measurement unit 106 includes, for example, a laser interferometer, irradiates a mirror 107 provided on the mask stage 102 with light (laser light), and measures the position of the mask stage 102 by the reflected light from the mirror 107. Further, the position of the substrate stage 104 is measured by the second measuring unit 108. The second measuring unit 108 includes, for example, a laser interferometer, irradiates the mirror 109 provided on the substrate stage 104 with light (laser light), and measures the position of the substrate stage 104 by the reflected light from the mirror 109.

マスクステージ１０２により保持されたマスクＭと基板ステージにより保持された基板Ｗとは、投影光学系１０３を介して光学的に共役な位置（投影光学系１０３の物体面および像面）にそれぞれ配置される。制御部１０５は、第１計測部１０６および第２計測部１０８の計測結果に基づいて、マスクステージ１０２と基板ステージ１０４とを投影光学系１０３の投影倍率に応じた速度比で相対的に同期走査する。これにより、マスクＭのパターンを基板上に転写することができる。 The mask M held by the mask stage 102 and the substrate W held by the substrate stage are respectively arranged at positions (object plane and image plane of the projection optical system 103) optically conjugate via the projection optical system 103. Ru. Based on the measurement results of the first measurement unit 106 and the second measurement unit 108, the control unit 105 relatively synchronously scans the mask stage 102 and the substrate stage 104 at a speed ratio according to the projection magnification of the projection optical system 103. To do. As a result, the pattern of the mask M can be transferred onto the substrate.

＜物品の製造方法の実施形態＞
本発明の実施形態にかかる物品の製造方法は、例えば、半導体デバイス等のマイクロデバイスや微細構造を有する素子等の物品を製造するのに好適である。本実施形態の物品の製造方法は、基板に塗布された感光剤に上記のリソグラフィ装置（露光装置）を用いて基板上にパターンを形成する形成工程と、形成工程でパターンが形成された基板を加工する加工工程とを含む。更に、かかる製造方法は、他の周知の工程（酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージング等）を含む。本実施形態の物品の製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも１つにおいて有利である。 <Embodiment of manufacturing method of article>
The method for manufacturing an article according to the embodiment of the present invention is suitable for producing an article such as a microdevice such as a semiconductor device or an element having a fine structure. The method for manufacturing an article of the present embodiment includes a forming step of forming a pattern on a substrate using the above-mentioned lithography apparatus (exposure apparatus) on a photosensitive agent applied to the substrate, and a substrate on which the pattern is formed in the forming step. Includes processing steps to be processed. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, flattening, etching, resist peeling, dicing, bonding, packaging, etc.). The method for producing an article of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

発明は上記実施形態に制限されるものではなく、発明の精神及び範囲から離脱することなく、様々な変更及び変形が可能である。従って、発明の範囲を公にするために請求項を添付する。 The invention is not limited to the above embodiments, and various modifications and modifications can be made without departing from the spirit and scope of the invention. Therefore, a claim is attached to make the scope of the invention public.

１０ａ、１０ｂ：基板保持装置、１１：ベース、１１ａ：排気孔、１２：隔壁部材、１３：支持部材、１４：第２支持部材、１５：流路 10a, 10b: Substrate holding device, 11: Base, 11a: Exhaust hole, 12: Partition member, 13: Support member, 14: Second support member, 15: Flow path

Claims (12)

基板を保持する基板保持装置であって、
保持された前記基板に対向する対向面に排気孔を有するベースと、
前記ベースから突出して前記基板を支持する支持部材と、
を含み、
前記支持部材は、前記対向面の中心部の周りを少なくとも３周した一続きの渦巻形状を有し、前記中心部から外側に向かう方向において、ｎ周目部分（ｎは自然数）とｎ＋１周目部分との間隔より、前記ｎ＋１周目部分とｎ＋２周目部分との間隔の方が狭くなるように構成されている、ことを特徴とする基板保持装置。 A board holding device that holds a board
A base having an exhaust hole on the holding surface facing the substrate,
A support member that protrudes from the base and supports the substrate,
Including
The support member has a continuous spiral shape that circulates at least three times around the central portion of the facing surface, and in the direction from the central portion to the outside, the nth lap portion (n is a natural number) and the n + 1th lap. A substrate holding device characterized in that the distance between the n + 1th lap portion and the n + 2nd lap portion is narrower than the distance between the portions. 前記支持部材は、前記ｎ周目部分と前記ｎ＋１周目部分との間隔が外側に向かうにつれて狭くなるように構成されている、ことを特徴とする請求項１に記載の基板保持装置。 The substrate holding device according to claim 1, wherein the support member is configured such that the distance between the nth peripheral portion and the n + 1th peripheral portion becomes narrower toward the outside. 前記支持部材は、前記方向において、前記ｎ＋１周目部分と前記ｎ＋２周目部分との間隔が、前記ｎ周目部分と前記ｎ＋１周目部分との間隔に対して７５〜８５％の範囲内になる箇所を含む、ことを特徴とする請求項１又は２に記載の基板保持装置。 In the support member, the distance between the n + 1 lap portion and the n + 2 lap portion is within the range of 75 to 85% with respect to the distance between the n lap portion and the n + 1 lap portion in the direction. The substrate holding device according to claim 1 or 2, wherein the substrate holding device includes a portion thereof. 前記ベースは、複数の前記排気孔を有し、
前記支持部材の一方の端部は、複数の前記排気孔の間に位置している、ことを特徴とする請求項１乃至３のいずれか１項に記載の基板保持装置。 The base has a plurality of the exhaust holes.
The substrate holding device according to any one of claims 1 to 3, wherein one end of the support member is located between the plurality of exhaust holes. 前記支持部材の外側に配置され、前記ベースから突出して前記基板の外周部を支持する隔壁部材を有し、
前記支持部材の他方の端部は、前記隔壁部材に接続されている、ことを特徴とする請求項４に記載の基板保持装置。 It has a partition wall member that is arranged outside the support member and projects from the base to support the outer peripheral portion of the substrate.
The substrate holding device according to claim 4, wherein the other end of the support member is connected to the partition wall member. 前記ベースから突出して前記基板を支持するピン形状の第２支持部材を更に含む、ことを特徴とする請求項１乃至５のいずれか１項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 5, further comprising a pin-shaped second supporting member that projects from the base and supports the substrate. 前記支持部材は、円形の渦巻形状を有する、ことを特徴とする請求項１乃至６のいずれか１項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 6, wherein the support member has a circular spiral shape. 前記支持部材は、矩形の渦巻形状を有する、ことを特徴とする請求項１乃至６のいずれか１項に記載の基板保持装置。 The substrate holding device according to any one of claims 1 to 6, wherein the support member has a rectangular spiral shape. 前記対向面の重心を原点とした極座標系における前記ｎ周目部分までのベクトルをｒｎ、当該ベクトルの回転角をθとしたとき、前記支持部材の渦巻形状は、ｒｎ＝ａ×θｂを満たすように構成され、
定数ａは、前記支持部材の１周目部分の寸法を規定するための値であり、
定数ｂは、回転角θに対する前記ｎ周目部分と前記ｎ＋１周目部分との間隔の減少率を規定するための値であり、０より大きく１より小さい値に設定される、ことを特徴とする請求項１乃至７のいずれか１項に記載の基板保持装置。 When the vector to the n peripheral portion in the polar coordinate system whose origin is a center of gravity of the opposing surfaces and r n, the rotation angle of the vector theta, spiral shape of the support member, r n = a × θ b Configured to meet
The constant a is a value for defining the size of the first peripheral portion of the support member.
The constant b is a value for defining the reduction rate of the interval between the nth lap portion and the n + 1th lap portion with respect to the rotation angle θ, and is set to a value larger than 0 and smaller than 1. The substrate holding device according to any one of claims 1 to 7. 前記ｎ周目部分と前記ｎ＋１周目部分との間隔をｗｎ、前記支持部材の１周目部分の寸法をｋとしたとき、前記支持部材は、
ｗｎ／（ｒｎ／ｋ）２≦（ａ×（θ＋２π）ｂ−ａ×θｂ）／（ａ×θｂ／ｋ）２
を満たすように構成されている、ことを特徴とする請求項９に記載の基板保持装置。 When the distance between the nth lap portion and the n + 1th lap portion is w n and the dimension of the first lap portion of the support member is k, the support member is
w n / (r n / k ) 2 ≦ (a × (θ + 2π) b -a × θ b) / (a × θ b / k) 2
The substrate holding device according to claim 9, wherein the substrate holding device is configured to satisfy the above conditions. 基板上にパターンを形成するリソグラフィ装置であって、
前記基板を保持する請求項１乃至１０のいずれか１項に記載の基板保持装置を含む、ことを特徴とするリソグラフィ装置。 A lithography system that forms a pattern on a substrate.
A lithography apparatus comprising the substrate holding apparatus according to any one of claims 1 to 10, wherein the substrate is held. 請求項１１に記載のリソグラフィ装置を用いて基板上にパターンを形成する形成工程と、
前記形成工程でパターンが形成された前記基板を加工する加工工程と、を含み、
前記加工工程で加工された前記基板から物品を製造することを特徴とする物品の製造方法。 A forming step of forming a pattern on a substrate by using the lithography apparatus according to claim 11.
Including a processing step of processing the substrate on which a pattern is formed in the forming step.
A method for producing an article, which comprises producing an article from the substrate processed in the processing step.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191643U (en) * 1982-06-15 1983-12-20 株式会社ニコン sample stand
JPS60142036U (en) * 1984-02-29 1985-09-20 オムロン株式会社 wafer jacket plate
JPH0230159A (en) * 1988-07-20 1990-01-31 Nikon Corp Substrate sucking device
JPH04208551A (en) * 1990-11-30 1992-07-30 Nikon Corp Substrate suction device
JPH0521584A (en) * 1991-07-16 1993-01-29 Nikon Corp Retaining equipment
JPH05253853A (en) * 1992-03-10 1993-10-05 Sony Corp Flake absorber and washing method for flake absorber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142036A (en) 1983-12-29 1985-07-27 Kogata Gas Reibou Gijutsu Kenkyu Kumiai Cylinder head for four-cycle engine
US7646580B2 (en) * 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP2007043042A (en) * 2005-07-07 2007-02-15 Sumitomo Electric Ind Ltd Wafer holder and manufacturing method thereof, wafer prober mounting same, and semiconductor heating device
KR101821636B1 (en) * 2013-08-28 2018-03-08 에이피시스템 주식회사 apparatus for holding substrate
CN105765708B (en) * 2013-09-26 2018-08-31 苏斯微技术光刻有限公司 Chuck for drawing and keeping chip

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191643U (en) * 1982-06-15 1983-12-20 株式会社ニコン sample stand
JPS60142036U (en) * 1984-02-29 1985-09-20 オムロン株式会社 wafer jacket plate
JPH0230159A (en) * 1988-07-20 1990-01-31 Nikon Corp Substrate sucking device
JPH04208551A (en) * 1990-11-30 1992-07-30 Nikon Corp Substrate suction device
JPH0521584A (en) * 1991-07-16 1993-01-29 Nikon Corp Retaining equipment
JPH05253853A (en) * 1992-03-10 1993-10-05 Sony Corp Flake absorber and washing method for flake absorber

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