TWI808283B - The processing method of the processed object - Google Patents
The processing method of the processed object Download PDFInfo
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- TWI808283B TWI808283B TW108144932A TW108144932A TWI808283B TW I808283 B TWI808283 B TW I808283B TW 108144932 A TW108144932 A TW 108144932A TW 108144932 A TW108144932 A TW 108144932A TW I808283 B TWI808283 B TW I808283B
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- 238000003672 processing method Methods 0.000 title claims description 8
- 239000012530 fluid Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005192 partition Methods 0.000 claims abstract description 13
- 238000003754 machining Methods 0.000 abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 12
- 239000004575 stone Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Threshing Machine Elements (AREA)
Abstract
[課題]提供一種被加工物的加工方法，能抑制加工屑附著在被加工物。[解決手段]一種被加工物的加工方法，藉由加工裝置加工被加工物，該加工裝置具有：加工單元，加工被加工物；及卡盤台，具備第一多孔部、第二多孔部、分隔部及框體，第一多孔部具備保持被加工物的保持面，第二多孔部具備保持被加工物的保持面且圍繞第一多孔部，分隔部分隔第一多孔部與第二多孔部，框體圍繞第二多孔部；被加工物的加工方法具備以下步驟：保持步驟，藉由使負壓作用在第一多孔部的保持面及第二多孔部的保持面，而藉由卡盤台吸引保持被加工物；加工步驟，藉由加工單元加工被加工物；以及卸除步驟，在使流體從第一多孔部噴出且不使流體從第二多孔部噴出的情況下，從卡盤台卸除被加工物。[Problem] To provide a method of machining a workpiece which can suppress adhesion of machining chips to the workpiece. [Solution] A method for processing a processed object. The processed object is processed by a processing device. The processing device has: a processing unit for processing the processed object; and a chuck table with a first porous part, a second porous part, a partition and a frame body. The holding surface of the porous part and the holding surface of the second porous part are used to suction and hold the workpiece by the chuck table; the processing step is to process the workpiece by the processing unit; and the unloading step is to remove the workpiece from the chuck table while the fluid is ejected from the first porous part and the fluid is not ejected from the second porous part.
Description
本發明係關於一種被加工物的加工方法，使用於藉由具有加工單元與卡盤台的加工裝置加工被加工物時。The invention relates to a processing method of a processed object, which is used when the processed object is processed by a processing device having a processing unit and a chuck table.
現今係藉由分割形成有IC（Integrated Circuit，積體電路）、LSI（Large Scale Integration，大型積體電路）等元件的半導體晶圓，而製造分別具備元件的多個元件晶片。又，藉由分割封裝基板而製造分別具備元件晶片的多個封裝元件，該封裝基板係以由樹脂而成的密封材（封膜樹脂）覆蓋多個安裝在基板上的元件晶片而得。此封裝元件係內建在以行動電話或個人電腦為代表的各式各樣電子設備。Currently, a plurality of element chips each having an element is manufactured by dividing a semiconductor wafer on which elements such as IC (Integrated Circuit) and LSI (Large Scale Integration) are formed. Also, a plurality of package elements each including an element chip is manufactured by dividing a package substrate obtained by covering a plurality of element chips mounted on the substrate with a sealing material (sealing resin) made of resin. This packaged component is built into various electronic devices represented by mobile phones or personal computers.
近年來，伴隨電子設備的小型化、薄型化，元件晶片與封裝元件亦被要求薄型化。於是，使用一種手法研削分割前的半導體晶圓與封裝基板而進行薄化。In recent years, along with miniaturization and thinning of electronic equipment, element wafers and packaged elements are also required to be thinner. Then, the semiconductor wafer and the package substrate before being divided are ground and thinned by one method.
在研削半導體晶圓或封裝基板等被加工物時，例如能使用一種研削裝置，其具備保持被加工物的卡盤台與研削被加工物的研削單元。在此研削單元中，裝設具備研削磨石的研削輪，該研削磨石係用於研削被加工物。在藉由卡盤台吸引保持被加工物的狀態，藉由一邊分別旋轉卡盤台與研削輪一邊使研削磨石接觸被加工物，而研削並薄化被加工物。When grinding a workpiece such as a semiconductor wafer or a package substrate, for example, a grinding device including a chuck table holding the workpiece and a grinding unit for grinding the workpiece can be used. In this grinding unit, a grinding wheel provided with a grinding stone for grinding a workpiece is installed. While the workpiece is sucked and held by the chuck table, the workpiece is ground and thinned by bringing the grinding stone into contact with the workpiece while rotating the chuck table and the grinding wheel.
若研削加工結束，則從卡盤台卸除被加工物。此時，若使預定的流體（例如水與空氣所混合的流體）從卡盤台噴出，則流體會作用在被加工物中面向卡盤台的面側，而變得易於從卡盤台卸除被加工物。When the grinding process is completed, the workpiece is removed from the chuck table. At this time, if a predetermined fluid (for example, a fluid mixed with water and air) is ejected from the chuck table, the fluid acts on the surface of the workpiece facing the chuck table, making it easier to remove the workpiece from the chuck table.
此外，若研削被加工物，則因研削加工而產生的碎屑（加工屑）會被卡盤台所吸引，並累積在卡盤台的內部。然後，研削加工結束後，若為了卸除被加工物而使流體從卡盤台噴出，則會有累積在卡盤台的內部的加工屑與流體一起被噴出而附著在被加工物的情況。In addition, when the workpiece is ground, chips (processing chips) generated by the grinding process are attracted by the chuck table and accumulated inside the chuck table. Then, after the grinding process is completed, if the fluid is ejected from the chuck table to remove the workpiece, machining chips accumulated inside the chuck table may be ejected together with the fluid and adhere to the workpiece.
於是，在研削加工後，會進行以下作業：使用清洗裝置等清洗被加工物，從而沖洗附著在被加工物的加工屑。舉例而言，在專利文獻1中揭露一種清洗裝置，其一邊支撐被加工物（清洗對象物）的外周緣，一邊藉由清洗輥清洗被加工物的下表面側。 [習知技術文獻] [專利文獻]Then, after the grinding process, an operation of washing the workpiece with a cleaning device or the like to wash away the machining chips adhering to the workpiece is performed. For example, Patent Document 1 discloses a cleaning device that cleans the lower surface side of the workpiece with a cleaning roller while supporting the outer periphery of the workpiece (object to be cleaned). [Prior art literature] [Patent Document]
[專利文獻1]日本特開2013-239498號公報。[Patent Document 1] Japanese Unexamined Patent Publication No. 2013-239498.
[發明所欲解決的課題] 如上述，若在從研削裝置的卡盤台卸除被加工物時使流體從卡盤台噴出，則加工屑會附著在被加工物。因為此加工屑會頑強地固定於被加工物，所以即使對研削加工後的被加工物施以清洗處理，也經常無法完全去除附著在被加工物的加工屑。因此，在使流體從卡盤台噴出時，乃希冀極力抑制加工屑附著在被加工物。[Problems to be Solved by the Invention] As described above, when the workpiece is unloaded from the chuck table of the grinding device, when the fluid is ejected from the chuck table, machining chips adhere to the workpiece. Since the machining chips are tenaciously fixed to the workpiece, even if the grinding workpiece is cleaned, the machining debris adhering to the workpiece cannot always be completely removed. Therefore, when the fluid is ejected from the chuck table, it is desired to suppress the attachment of machining chips to the workpiece as much as possible.
本發明為有鑒於所述問題而完成者，目的在於提供一種被加工物的加工方法，能抑制加工屑附著在被加工物。The present invention was made in view of the above problems, and an object of the present invention is to provide a method of processing a workpiece that can suppress adhesion of machining chips to the workpiece.
[解決課題的技術手段] 若根據本發明一態樣，則提供一種被加工物的加工方法，藉由加工裝置加工該被加工物，該加工裝置具有：加工單元，加工被加工物；及卡盤台，具備第一多孔部、第二多孔部、分隔部及框體，該第一多孔部具備保持該被加工物的保持面，該第二多孔部具備保持該被加工物的保持面且圍繞該第一多孔部，該分隔部分隔該第一多孔部與該第二多孔部，該框體圍繞該第二多孔部；該被加工物的加工方法具備以下步驟：保持步驟，以覆蓋該第一多孔部的保持面整體的方式，將該被加工物配置在該卡盤台上，藉由使負壓作用在該第一多孔部的保持面及該第二多孔部的保持面，而藉由該卡盤台吸引保持該被加工物；加工步驟，藉由該加工單元加工被該卡盤台保持的該被加工物；以及卸除步驟，在使流體從該第一多孔部噴出且不使該流體從該第二多孔部噴出的情況下，從該卡盤台卸除該被加工物。[Technical means to solve the problem] According to an aspect of the present invention, a method for processing a workpiece is provided. The workpiece is processed by a processing device. The processing device has: a processing unit for processing the workpiece; The processing method of the present invention has the following steps: a holding step of arranging the workpiece on the chuck table so as to cover the entire holding surface of the first porous part, and applying negative pressure to the holding surface of the first porous part and a holding surface of the second porous part to attract and hold the workpiece by the chuck table; a processing step of processing the workpiece held by the chuck table with the processing unit; and a removing step of ejecting the fluid from the first porous part without ejecting the fluid from the second porous part , unloading the workpiece from the chuck table.
此外，較佳為，上述被加工物的加工方法在該卸除步驟後還具備噴出步驟，該噴出步驟係藉由使該流體從該第二多孔部噴出，而使該第二多孔部所吸引的加工屑從該第二多孔部噴出。In addition, it is preferable that the above-mentioned processing method of a workpiece further includes a discharge step after the removing step, and the discharge step is to discharge the processing chips attracted by the second porous part from the second porous part by causing the fluid to discharge from the second porous part.
[發明功效] 在本發明的一態樣之被加工物的加工方法中，在使負壓作用在第一多孔部的保持面及第二多孔部的保持面而吸引保持被加工物的狀態下，藉由加工單元加工被加工物。之後，在使流體從第一多孔部噴出且不使流體從第二多孔部噴出的情況下，從卡盤台卸除被加工物。[Efficacy of the invention] In the method of processing a workpiece according to one aspect of the present invention, the workpiece is processed by the processing unit in a state where negative pressure is applied to the holding surface of the first porous portion and the holding surface of the second porous portion to attract and hold the workpiece. Thereafter, the workpiece is removed from the chuck table while the fluid is ejected from the first porous portion and the fluid is not ejected from the second porous portion.
若使用上述被加工物的加工方法，則在從卡盤台上卸除被加工物時，第二多孔部所吸引的加工屑不會朝向被加工物噴出。藉此，抑制加工屑附著在被加工物。According to the method of processing a workpiece described above, when the workpiece is removed from the chuck table, the machining chips sucked by the second porous portion are not ejected toward the workpiece. This prevents machining chips from adhering to the workpiece.
以下，參照附圖並說明本發明的一態樣之實施方式。首先，針對能使用本實施方式之被加工物的加工方法進行加工的被加工物的構成例進行說明。圖1係表示被加工物11的立體圖。Hereinafter, an embodiment of one aspect of the present invention will be described with reference to the drawings. First, a configuration example of a workpiece that can be processed using the method of processing a workpiece according to this embodiment will be described. FIG. 1 is a perspective view showing a workpiece 11 .
被加工物11係使用例如矽等材料而形成為圓盤狀，且具備正面11a及背面11b。被加工物11是藉由以彼此交叉之方式排列成格子狀的多條分割預定線（切割道）13而劃分成多個區域，在此多個區域的正面11a側，分別形成有IC（Integrated Circuit，積體電路）、LSI（Large Scale Integration，大型積體電路）以及LED（Light Emitting Diode，發光二極體）等元件15。The workpiece 11 is formed in a disk shape using a material such as silicon, and has a front surface 11a and a rear surface 11b. The workpiece 11 is divided into a plurality of regions by a plurality of planned dividing lines (cutting lines) 13 arranged in a grid shape to intersect each other, and elements 15 such as IC (Integrated Circuit), LSI (Large Scale Integration, large scale integrated circuit), and LED (Light Emitting Diode, light emitting diode) are respectively formed on the front side 11 a side of the plurality of regions.
此外，被加工物11的材質、形狀、結構、大小等並未有限制。舉例而言，被加工物11可為由矽以外的半導體（GaAs、InP、GaN、SiC等）、玻璃、陶瓷、樹脂、金屬等材料所形成的晶圓，亦可為CSP（Chip Size Package，晶片級封裝）、QFN（Quad Flat Non-leaded Package，四方平面無引腳封裝）等封裝基板。又，元件15的種類、數量、形狀、結構、大小、配置等亦未有限制。In addition, the material, shape, structure, size, etc. of the workpiece 11 are not limited. For example, the workpiece 11 can be a wafer formed of semiconductors other than silicon (GaAs, InP, GaN, SiC, etc.), glass, ceramics, resin, metal, etc., or it can be a package substrate such as CSP (Chip Size Package, chip-level package), QFN (Quad Flat Non-leaded Package, quad flat non-leaded package). Also, the type, number, shape, structure, size, arrangement, etc. of the elements 15 are not limited.
藉由沿著分割預定線13分割被加工物11，能得到分別具備元件15的多個元件晶片。在分割被加工物11時，舉例而言，能使用具備切割單元的加工裝置（切割裝置）或具備雷射照射單元的加工裝置（雷射加工裝置）等，其中，該切割單元裝設有圓環狀的切割刀片，該雷射照射單元係對被加工物11照射雷射光束。By dividing the workpiece 11 along the planned division lines 13 , a plurality of element wafers each including the elements 15 can be obtained. When dividing the workpiece 11, for example, a processing device (cutting device) provided with a cutting unit (cutting device) or a processing device (laser processing device) provided with a laser irradiation unit equipped with an annular cutting blade for irradiating the workpiece 11 with a laser beam can be used.
又，對於分割前的被加工物11，以將元件晶片的薄型化等作為目的而施以研削加工。在此研削加工中，能使用用於研削被加工物11的加工裝置（研削裝置）。在以下，針對藉由研削被加工物11的背面11b而薄化被加工物11的例子進行說明。In addition, the workpiece 11 before division is subjected to grinding for the purpose of reducing the thickness of the element wafer or the like. In this grinding process, a processing device (a grinding device) for grinding the workpiece 11 can be used. Hereinafter, an example in which the workpiece 11 is thinned by grinding the back surface 11 b of the workpiece 11 will be described.
在研削被加工物11的背面11b側時，首先，將圓形的保護構件（保護膠膜）17貼附在被加工物11的正面11a側。保護構件17係由樹脂等所形成，並形成為直徑大致與被加工物11相同。若保護構件17被貼附至被加工物11的正面11a側，則多個元件15會被保護構件17覆蓋而被保護。此外，在無須保護被加工物11的正面11a側的情況，可省略保護構件17的貼附。When grinding the back surface 11 b side of the workpiece 11 , first, a circular protective member (protective film) 17 is attached to the front surface 11 a side of the workpiece 11 . The protective member 17 is formed of resin or the like, and is formed to have substantially the same diameter as the workpiece 11 . When the protection member 17 is attached to the front surface 11 a side of the workpiece 11 , the plurality of elements 15 are covered and protected by the protection member 17 . In addition, when it is not necessary to protect the front surface 11a side of the workpiece 11, the attachment of the protection member 17 can be omitted.
接著，使用具備加工單元（研削單元）的加工裝置（研削裝置）加工被加工物11，其中，該加工單元係研削被加工物11。圖2（A）係表示加工裝置2的局部剖面前視圖，圖2（B）係表示卡盤台4的俯視圖。此外，在圖2（A）中，以方塊表示加工裝置2的構成要素的局部。Next, the workpiece 11 is processed using a processing device (grinding device) provided with a processing unit (grinding unit) that grinds the workpiece 11 . FIG. 2(A) is a partial sectional front view of the processing device 2 , and FIG. 2(B) is a top view of the chuck table 4 . In addition, in FIG. 2(A) , some components of the processing apparatus 2 are represented by blocks.
加工裝置2具備保持被加工物11的卡盤台4。卡盤台4係對應被加工物11的形狀而形成為俯視呈圓形。但是，卡盤台4的形狀會因應被加工物11的形狀等而適當變更。The processing device 2 includes a chuck table 4 holding a workpiece 11 . The chuck table 4 is formed in a circular shape in plan view corresponding to the shape of the workpiece 11 . However, the shape of the chuck table 4 is appropriately changed in accordance with the shape of the workpiece 11 and the like.
卡盤台4具備使用例如陶瓷或樹脂等而形成的框體（本體部）6。在框體6的上表面6a側形成有俯視呈圓形的凹部6b。在此凹部6b的內部設有：圓盤狀的第一多孔部8，其配置在卡盤台4的中央側；以及環狀的第二多孔部10，其配置在卡盤台4的外周側且圍繞第一多孔部8。亦即，框體6係圍繞第一多孔部8與第二多孔部10。 The chuck table 4 includes a frame (main body) 6 formed using, for example, ceramics or resin. On the upper surface 6a side of the frame body 6, a concave portion 6b that is circular in planar view is formed. Inside the concave portion 6 b are provided a disc-shaped first porous portion 8 disposed on the central side of the chuck table 4 , and an annular second porous portion 10 disposed on the outer peripheral side of the chuck table 4 and surrounding the first porous portion 8 . That is, the frame body 6 surrounds the first porous portion 8 and the second porous portion 10 .
第一多孔部8與第二多孔部10係分別由例如多孔陶瓷等所形成，且形成為上下連通的多孔狀。第一多孔部8的上表面構成保持被加工物11之圓形的保持面8a，第二多孔部10的上表面構成圍繞保持面8a且保持被加工物11之環狀的保持面10a。框體6的上表面6a、第一多孔部8的保持面8a以及第二多孔部10的保持面10a係大致配置在相同平面上，且構成卡盤台4的上表面。 The first porous part 8 and the second porous part 10 are respectively formed of, for example, porous ceramics, and are formed in a porous shape communicating up and down. The upper surface of the first porous portion 8 constitutes a circular holding surface 8 a for holding the workpiece 11 , and the upper surface of the second porous portion 10 constitutes an annular holding surface 10 a surrounding the holding surface 8 a and holding the workpiece 11 . The upper surface 6 a of the frame body 6 , the holding surface 8 a of the first porous portion 8 , and the holding surface 10 a of the second porous portion 10 are arranged substantially on the same plane, and constitute the upper surface of the chuck table 4 .
此外，第一多孔部8與第二多孔部10的形狀會因應被加工物11的形狀等而適當變更。但是，第一多孔部8係形成為能藉由被加工物11覆蓋保持面8a整體的大小。舉例而言，第一多孔部8係以其直徑變得小於被加工物11的直徑之方式形成。 In addition, the shapes of the first porous portion 8 and the second porous portion 10 are appropriately changed according to the shape of the workpiece 11 and the like. However, the first porous portion 8 is formed in such a size that the entire holding surface 8 a can be covered by the workpiece 11 . For example, the first porous portion 8 is formed such that its diameter becomes smaller than that of the workpiece 11 .
又，在凹部6b的內部，形成有從凹部6b的底部往上方突出之環狀的分隔部12。分隔部12設在第一多孔部8與第二多孔部10之間，並分隔第一多孔部8與第二多孔部10。亦即，分隔部12係被配置成包圍第一多孔部8且被第二多孔部10包圍。此外，在圖2(A)中，分隔部12與框體6呈一體化，但分隔部12亦可在與框體6個別形成後，固定在凹部6b的內部。 Moreover, in the inside of the recessed part 6b, the ring-shaped partition part 12 which protrudes upward from the bottom part of the recessed part 6b is formed. The partition part 12 is provided between the first porous part 8 and the second porous part 10 to separate the first porous part 8 and the second porous part 10 . That is, the partition portion 12 is arranged to surround the first porous portion 8 and to be surrounded by the second porous portion 10 . In addition, in FIG. 2(A), the partition part 12 is integrated with the frame body 6, but the partition part 12 may be formed separately from the frame body 6 and fixed inside the recessed part 6b.
第一多孔部8的保持面8a係經由形成在框體6內部的吸引路徑(未圖示)而與閥件14連接。又，第二多孔部10的保持面10a係經由形成在框體6內部的吸引路徑(未圖示)而與閥件16連接。閥件14與閥件16係分別經由閥件18而與由噴射器等所形成的吸引源20連接，並分別經由閥件22a、22b而與供給流體的流體供給源24連接。 The holding surface 8 a of the first porous portion 8 is connected to the valve element 14 via a suction path (not shown) formed inside the frame body 6 . Moreover, the holding surface 10 a of the second porous portion 10 is connected to the valve element 16 via a suction path (not shown) formed inside the frame body 6 . The valve 14 and the valve 16 are respectively connected to a suction source 20 formed of an injector or the like via a valve 18, and are connected to a fluid supply source 24 for supplying fluid via valves 22a and 22b, respectively.
流體供給源24具備：水供給源24a，其與閥件22a連接並供給水；以及空氣供給源24b，其與閥件22b連接並供給空氣。若打開閥件22a、22b，則從水供給源24a所供給的水與從空氣供給源24b所供給的空氣會混合，而產生包含水與空氣的混合流體。 The fluid supply source 24 includes: a water supply source 24a connected to the valve body 22a to supply water; and an air supply source 24b connected to the valve body 22b to supply air. When the valves 22a and 22b are opened, the water supplied from the water supply source 24a and the air supplied from the air supply source 24b are mixed to generate a mixed fluid containing water and air.
又，卡盤台4係與馬達等旋轉驅動源(未圖示)連接，此旋轉驅動源係使卡盤台4繞大致平行於鉛直方向的旋轉軸進行旋轉。更進一步，在卡盤台4的下方設有移動機構(未圖示)，此移動機構係使卡盤台4在水平方向移動。Also, the chuck table 4 is connected to a rotational drive source (not shown) such as a motor, and this rotational drive source rotates the chuck table 4 around a rotational axis substantially parallel to the vertical direction. Furthermore, a moving mechanism (not shown) is provided below the chuck table 4, and this moving mechanism moves the chuck table 4 in the horizontal direction.
在卡盤台4的上方，配置有對被加工物11施以研削加工的加工單元（研削單元）30。加工單元30具備被升降機構（未圖示）支撐的主軸殼體（未圖示）。在主軸殼體中容納有主軸32，圓盤狀的安裝件34固定在從主軸殼體露出的主軸32的下端部。Above the chuck table 4 , a processing unit (grinding unit) 30 for performing grinding processing on the workpiece 11 is arranged. The machining unit 30 includes a spindle housing (not shown) supported by an elevating mechanism (not shown). A main shaft 32 is accommodated in the main shaft case, and a disc-shaped mounting member 34 is fixed to the lower end of the main shaft 32 exposed from the main shaft case.
在安裝件34的下表面側，裝設有直徑大致與安裝件34相同的研削輪36。研削輪36具備由不鏽鋼、鋁等金屬材料所形成之圓環狀的研削輪基台38。又，在研削輪基台38的下表面側，沿著研削輪基台38的外周排列有形成為長方體狀的多個研削磨石40。On the lower surface side of the attachment 34, a grinding wheel 36 having a diameter substantially the same as that of the attachment 34 is attached. The grinding wheel 36 includes an annular grinding wheel base 38 formed of a metal material such as stainless steel or aluminum. Further, on the lower surface side of the grinding wheel base 38 , a plurality of grinding stones 40 formed in a rectangular parallelepiped shape are arranged along the outer periphery of the grinding wheel base 38 .
在主軸32的上端側（基端側），連接有馬達等旋轉驅動源（未圖示），研削輪36係藉由此旋轉驅動源所產生的力而繞大致平行於鉛直方向的旋轉軸進行旋轉。又，在加工單元30的內部或附近，設有用於對藉由卡盤台4所保持的被加工物11及研削磨石40供給純水等加工液（研削液）的噴嘴（未圖示）。A rotational drive source (not shown) such as a motor is connected to the upper end side (base end side) of the main shaft 32 , and the grinding wheel 36 is rotated around a rotational axis substantially parallel to the vertical direction by the force generated by the rotational drive source. In addition, a nozzle (not shown) for supplying a machining fluid (grinding fluid) such as pure water to the workpiece 11 held by the chuck table 4 and the grinding stone 40 is provided inside or near the machining unit 30 .
研削被加工物11時，首先，藉由卡盤台4吸引保持被加工物11（保持步驟）。在保持步驟中，以被加工物11的正面11a側（保護構件17）面向卡盤台4的上表面的方式，將被加工物11配置在卡盤台4上。When grinding the workpiece 11, first, the workpiece 11 is sucked and held by the chuck table 4 (holding step). In the holding step, the workpiece 11 is arranged on the chuck table 4 such that the front surface 11 a side (protective member 17 ) of the workpiece 11 faces the upper surface of the chuck table 4 .
此外，被加工物11係以藉由被加工物11的正面11a側覆蓋第一多孔部8的保持面8a的整體之方式配置。具體而言，形成在被加工物11的正面11a側的保護構件17係與第一多孔部8的保持面8a的整體接觸。In addition, the workpiece 11 is disposed so that the entire holding surface 8 a of the first porous portion 8 is covered by the front surface 11 a side of the workpiece 11 . Specifically, the protective member 17 formed on the front surface 11 a side of the workpiece 11 is in contact with the entire holding surface 8 a of the first porous portion 8 .
又，也藉由被加工物11的正面11a側覆蓋第二多孔部10的保持面10a。但是，根據被加工物11的大小或形狀等，會有第二多孔部10的保持面10a的局部不接觸保護構件17的情況。Also, the holding surface 10 a of the second porous portion 10 is covered by the front surface 11 a side of the workpiece 11 . However, depending on the size and shape of the workpiece 11 , a part of the holding surface 10 a of the second porous portion 10 may not contact the protection member 17 in some cases.
例如，如圖2（A）所示，在被加工物11的直徑比第二多孔部10的直徑稍小一些的情況，第二多孔部10的保持面10a的局部會呈露出的狀態。又，即使被加工物11的直徑是第二多孔部10的直徑以上，例如由於被加工物11的側面形成為曲面狀，也會有在被加工物11與第二多孔部10之間產生縫隙的情況。For example, as shown in FIG. 2(A) , when the diameter of the workpiece 11 is slightly smaller than the diameter of the second porous portion 10 , a part of the holding surface 10 a of the second porous portion 10 is exposed. Also, even if the diameter of the workpiece 11 is larger than the diameter of the second porous portion 10 , for example, a gap may be generated between the workpiece 11 and the second porous portion 10 because the side surface of the workpiece 11 is curved.
在將被加工物11配置在卡盤台4上的狀態，打開閥件14、閥件16以及閥件18，並關閉閥件22a、22b。藉此，吸引源20的負壓會作用在第一多孔部8的保持面8a與第二多孔部10的保持面10a，被加工物11被卡盤台4吸引保持。In a state where the workpiece 11 is placed on the chuck table 4, the valve 14, the valve 16, and the valve 18 are opened, and the valves 22a, 22b are closed. Thereby, the negative pressure of the suction source 20 acts on the holding surface 8 a of the first porous portion 8 and the holding surface 10 a of the second porous portion 10 , and the workpiece 11 is sucked and held by the chuck table 4 .
此外，在第一多孔部8與第二多孔部10之間設有分隔部12，在第一多孔部8與第二多孔部10之間的流體的流動是藉由分隔部12而被阻斷。因此，由第一多孔部8對被加工物11的吸引與由第二多孔部10對被加工物11的吸引是可分別獨立地控制。In addition, a partition 12 is provided between the first porous part 8 and the second porous part 10 , and the fluid flow between the first porous part 8 and the second porous part 10 is blocked by the partition 12 . Therefore, the suction of the workpiece 11 by the first porous portion 8 and the suction of the workpiece 11 by the second porous portion 10 are independently controllable.
如圖2（A）所示，在第二多孔部10的保持面10a的局部露出的情況，有吸引源20的負壓從此露出的區域洩漏的情況。但是，若露出的區域只有些微，則洩漏也少，對於由第二多孔部10實行之被加工物11的保持不會產生影響。As shown in FIG. 2(A) , when a part of the holding surface 10 a of the second porous portion 10 is exposed, the negative pressure of the suction source 20 may leak from the exposed area. However, if the exposed area is only slightly, there will be little leakage, and it will not affect the holding of the workpiece 11 by the second porous portion 10 .
接著，藉由加工單元30加工由卡盤台4保持的被加工物11（加工步驟）。在本實施方式中，係藉由加工單元30對被加工物11的背面11b側施以研削加工。圖3（A）係表示在加工步驟中的加工裝置2之局部剖面前視圖，圖3（B）係放大表示在加工步驟中的被加工物11及卡盤台4之剖面圖。Next, the workpiece 11 held by the chuck table 4 is processed by the processing unit 30 (processing step). In the present embodiment, the grinding process is performed on the back surface 11 b side of the workpiece 11 by the machining unit 30 . 3(A) is a partial sectional front view of the processing device 2 in the processing step, and FIG. 3(B) is an enlarged cross-sectional view showing the workpiece 11 and the chuck table 4 in the processing step.
在加工步驟中，首先，使保持被加工物11的卡盤台4移動至加工單元30的下方。然後，使卡盤台4與研削輪36分別旋轉，並一邊朝向被加工物11的背面11b側供給加工液一邊使主軸32下降。此時主軸32的下降速度是以研削磨石40用適當的力按壓被加工物11的背面11b側之方式進行調整。In the processing step, first, the chuck table 4 holding the workpiece 11 is moved below the processing unit 30 . Then, the chuck table 4 and the grinding wheel 36 are respectively rotated, and the main shaft 32 is lowered while supplying the machining fluid toward the rear surface 11 b side of the workpiece 11 . At this time, the descending speed of the main shaft 32 is adjusted so that the grinding stone 40 presses the back surface 11b side of the workpiece 11 with an appropriate force.
若研削磨石40接觸被加工物11的背面11b側，則被加工物11會被研削而薄化。然後，若被加工物11成為所期望的厚度，則結束被加工物11的研削加工。When the grinding stone 40 contacts the back surface 11 b side of the workpiece 11 , the workpiece 11 is ground and thinned. Then, when the workpiece 11 has a desired thickness, the grinding process of the workpiece 11 is terminated.
此外，若藉由加工單元30加工被加工物11，則在卡盤台4上會產生加工屑。此加工屑雖會藉由加工液沖刷掉，但會有一部分被位在卡盤台4外周側的第二多孔部10吸引的情況。舉例而言，若如圖3（B）所示般第二多孔部10的保持面10a的局部露出，則加工屑50會被吸引在此露出的區域，且加工屑50會累積在第二多孔部10的內部。In addition, when the workpiece 11 is processed by the processing unit 30 , processing chips are generated on the chuck table 4 . Although the machining chips are washed away by the machining fluid, some of them are attracted by the second porous portion 10 located on the outer peripheral side of the chuck table 4 . For example, if a part of the holding surface 10a of the second porous portion 10 is exposed as shown in FIG.
接著，從卡盤台4卸除被加工物11（卸除步驟）。圖4（A）係表示在卸除步驟中的加工裝置2之剖面圖，圖4（B）係放大表示在卸除步驟中的被加工物11及卡盤台4之剖面圖。Next, the workpiece 11 is removed from the chuck table 4 (removal step). FIG. 4(A) is a cross-sectional view of the processing device 2 in the unloading step, and FIG. 4(B) is an enlarged cross-sectional view of the workpiece 11 and the chuck table 4 in the unloading step.
在從卡盤台4卸除被加工物11時，打開閥件14與閥件22a、22b，並關閉閥件16及閥件18。藉此，作用在保持面8a及保持面10a的負壓會被解除，從而由卡盤台4實行之被加工物11的吸引會被解除。又，從水供給源24a所供給的水與從空氣供給源24b所供給的空氣會混合而產生流體52並供給至第一多孔部8。然後，流體52會從第一多孔部8的保持面8a朝向上方噴出。 When unloading the workpiece 11 from the chuck table 4, the valve 14 and the valves 22a and 22b are opened, and the valve 16 and the valve 18 are closed. Thereby, the negative pressure acting on the holding surface 8a and the holding surface 10a is released, and the suction of the workpiece 11 by the chuck table 4 is released. Moreover, the water supplied from the water supply source 24 a and the air supplied from the air supply source 24 b are mixed to generate a fluid 52 and supplied to the first porous portion 8 . Then, the fluid 52 is ejected upward from the holding surface 8 a of the first porous portion 8 .
此外，在第一多孔部8與第二多孔部10之間的流體52的流動是藉由分隔部12而被阻斷。因此，往第一多孔部8的流體52的供給與往第二多孔部10的流體52的供給是可分別獨立地控制。 In addition, the flow of the fluid 52 between the first porous part 8 and the second porous part 10 is blocked by the partition part 12 . Therefore, the supply of the fluid 52 to the first porous portion 8 and the supply of the fluid 52 to the second porous portion 10 can be independently controlled.
若在卸除被加工物11時將流體52供給至第一多孔部8，則第一多孔部8內部的真空狀態會被解除，且同時從保持面8a噴出的流體52會被吹附至被加工物11的正面11a側(保護構件17)。藉此，能輔助被加工物11的卸除，並輕易地從卡盤台4上卸除被加工物11。 If the fluid 52 is supplied to the first porous portion 8 when the workpiece 11 is removed, the vacuum state inside the first porous portion 8 will be released, and at the same time, the fluid 52 ejected from the holding surface 8a will be blown onto the front surface 11a side of the workpiece 11 (protective member 17). Thereby, removal of the workpiece 11 can be assisted, and the workpiece 11 can be easily removed from the chuck table 4 .
此外，在流體52包含水的情況，從流體供給源24所供給的流體52在第一多孔部8的內部容易在水平方向擴散，流體52變得容易從保持面8a的整面噴出。藉此，流體52會作用在遍及被加工物11的正面11a側的廣大範圍，從而被加工物11變得容易卸除。又，在流體52除了水還包含空氣的情況，進入第一多孔部8的保持面8a與保護構件17之間的水的表面張力會被空氣緩和。藉此，被加工物11的卸除會變得更容易。 In addition, when the fluid 52 contains water, the fluid 52 supplied from the fluid supply source 24 tends to spread in the horizontal direction inside the first porous portion 8, and the fluid 52 becomes easy to eject from the entire surface of the holding surface 8a. Thereby, the fluid 52 acts on a wide range over the front surface 11a side of the workpiece 11, and the workpiece 11 can be easily removed. Also, when the fluid 52 contains air in addition to water, the surface tension of the water entering between the holding surface 8a of the first porous portion 8 and the protective member 17 is relaxed by the air. Thereby, removal of the workpiece 11 becomes easier.
因此，作為流體52，較佳為使用包含水與空氣的流體。但是，只要能輔助被加工物11的卸除，則對流體52的成分不會有限制。又，流體供給源24的構成係因應流體52的成分而適當變更。 Therefore, it is preferable to use a fluid containing water and air as the fluid 52 . However, there is no limitation on the composition of the fluid 52 as long as it can assist the removal of the workpiece 11 . In addition, the configuration of the fluid supply source 24 is appropriately changed according to the composition of the fluid 52 .
於此，若假設在卸除被加工物11時使流體52也從第二多孔部10噴出，則在加工步驟中第二多孔部10所吸引的加工屑50(參照圖4(B))會與流體52一起朝向被加工物11噴出。然後，加工屑50會附著在被加工物11的正面11a側(保護構件17)，且同時沿著被加工物11的側面而亦附著在背面11b側。因為此加工屑50會頑強地固定於被加工物11，所以即使之後對被加工物11施以清洗處理，也經常無法完全去除。 Here, assuming that the fluid 52 is also ejected from the second porous portion 10 when the workpiece 11 is removed, the machining chips 50 (see FIG. Then, the machining chips 50 adhere to the front surface 11 a side (protective member 17 ) of the workpiece 11 and also adhere to the rear surface 11 b side along the side surface of the workpiece 11 . Since the machining chips 50 are tenaciously fixed to the workpiece 11, even if the workpiece 11 is cleaned afterward, they cannot always be completely removed.
另一方面，在本實施方式之加工方法中，在實施卸除步驟時關閉閥件16，流體52不會從第二多孔部10噴出。因此，累積在第二多孔部10內部的加工屑50不會朝向被加工物11噴出，從而抑制加工屑50對被加工物11的附著。On the other hand, in the processing method of the present embodiment, the valve member 16 is closed during the removal step, so that the fluid 52 is not ejected from the second porous portion 10 . Therefore, the machining chips 50 accumulated inside the second porous portion 10 are not ejected toward the workpiece 11 , and adhesion of the machining chips 50 to the workpiece 11 is suppressed.
但是，若大量的加工屑50累積在第二多孔部10的內部，則在藉由卡盤台4保持被加工物11時，會有由第二多孔部10實行之被加工物11的吸引減弱之虞。因此，在實施卸除步驟後，較佳為使第二多孔部10所吸引的加工屑50噴出（噴出步驟）。However, if a large amount of machining chips 50 accumulates inside the second porous portion 10 , the suction of the workpiece 11 by the second porous portion 10 may be weakened when the workpiece 11 is held by the chuck table 4 . Therefore, it is preferable to eject the machining chips 50 sucked by the second porous portion 10 after the removal step is performed (the ejection step).
具體而言，從卡盤台4上卸除被加工物11後，打開閥件16，對第二多孔部10供給流體52。藉此，第二多孔部10所吸引的加工屑50會與流體52一起從第二多孔部10的保持面10a噴出，從而加工屑50會從第二多孔部10的內部排出。如此，藉由實施噴出步驟，可防止加工屑50累積在第二多孔部10的內部而妨礙被加工物11的吸引的情況。Specifically, after the workpiece 11 is removed from the chuck table 4 , the valve 16 is opened to supply the fluid 52 to the second porous portion 10 . Thereby, the machining chips 50 attracted by the second porous portion 10 are ejected together with the fluid 52 from the holding surface 10 a of the second porous portion 10 , and the machining chips 50 are discharged from the inside of the second porous portion 10 . In this way, by performing the ejection step, it is possible to prevent the processing chips 50 from accumulating inside the second porous portion 10 and hindering the suction of the workpiece 11 .
如以上所述，在本實施方式之被加工物的加工方法中，在使負壓作用在第一多孔部8的保持面8a及第二多孔部10的保持面10a而吸引保持被加工物11的狀態下，藉由加工單元30加工被加工物11。之後，在使流體52從第一多孔部8噴出且不使流體52從第二多孔部10噴出的情況下，從卡盤台4卸除被加工物11。As described above, in the method of processing a workpiece according to this embodiment, the workpiece 11 is processed by the processing unit 30 in a state where the workpiece 11 is sucked and held by applying negative pressure to the holding surface 8 a of the first porous portion 8 and the holding surface 10 a of the second porous portion 10 . Thereafter, the workpiece 11 is removed from the chuck table 4 while the fluid 52 is ejected from the first porous portion 8 and the fluid 52 is not ejected from the second porous portion 10 .
若使用上述被加工物的加工方法，則在從卡盤台4上卸除被加工物11時，第二多孔部10所吸引的加工屑50不會朝向被加工物11噴出。藉此，抑制加工屑50附著在被加工物11。According to the method for processing a workpiece described above, when the workpiece 11 is removed from the chuck table 4 , the machining chips 50 sucked by the second porous portion 10 are not ejected toward the workpiece 11 . This prevents the machining chips 50 from adhering to the workpiece 11 .
此外，在上述中針對加工裝置2係藉由加工單元30研削被加工物11的研削裝置的情況進行說明，但加工裝置2並不受限於研削裝置。亦即，本實施方式之被加工物的加工方法亦可適用在會產生加工屑的其他各式各樣的加工。In addition, in the above description, the processing device 2 is a grinding device for grinding the workpiece 11 by the processing unit 30, but the processing device 2 is not limited to the grinding device. That is, the processing method of the workpiece according to this embodiment can also be applied to various other processing in which processing chips are generated.
舉例而言，加工裝置2亦可具備以下者以取代加工單元30：加工單元（切割單元），其裝設有用於切割被加工物11的切割刀片；加工單元（研磨單元），其裝設有用於研磨被加工物11的研磨墊；或者加工單元（雷射照射單元），其藉由雷射光束的照射而加工被加工物11。在此情況，加工裝置2係分別發揮作為切割裝置、研磨裝置、雷射加工裝置的功能。For example, the processing device 2 may also have the following instead of the processing unit 30: a processing unit (cutting unit), which is equipped with a cutting blade for cutting the workpiece 11; a processing unit (grinding unit), which is equipped with a polishing pad for grinding the workpiece 11; or a processing unit (laser irradiation unit), which processes the workpiece 11 by irradiation of a laser beam. In this case, the processing device 2 functions as a cutting device, a polishing device, and a laser processing device, respectively.
即使在使用切割裝置、研磨裝置或雷射加工裝置加工被加工物11的情況，也會產生加工屑。然而，藉由適用本實施方式之被加工物的加工方法，可抑制加工屑附著在被加工物11。Even when the workpiece 11 is processed using a cutting device, a grinding device, or a laser processing device, processing chips are generated. However, by applying the processing method of the workpiece 11 according to the present embodiment, it is possible to suppress adhesion of machining chips to the workpiece 11 .
除此之外，上述實施方式之結構、方法等只要在不脫離本發明目的之範圍內可適當變更並實施。In addition, the structure, method, etc. of the said embodiment can be changed suitably and implemented in the range which does not deviate from the object of this invention.
11:被加工物11a:正面 11b:背面13:分割預定線（切割道） 15:元件17:保護構件（保護膠膜） 2:加工裝置4:卡盤台 6:框體（本體部）6a:上表面 6b:凹部8:第一多孔部 8a:保持面10:第二多孔部 10a:保持面12:分隔部 14:閥件16:閥件 18:閥件20:吸引源 22a、22b:閥件24:流體供給源 24a:水供給源24b:空氣供給源 30:加工單元（研削單元）32:主軸 34:安裝件36:研削輪 38:研削輪基台40:研削磨石 50:加工屑52:流體11: Workpiece 11a: Front 11b: Back side 13: Separation schedule line (cutting line) 15: Element 17: Protective member (protective film) 2: Processing device 4: Chuck table 6: Frame body (body part) 6a: Upper surface 6b: concave part 8: first porous part 8a: holding surface 10: second porous part 10a: holding surface 12: partition 14: Valve 16: Valve 18: Valve 20: Attraction source 22a, 22b: Valve 24: Fluid supply source 24a: water supply source 24b: air supply source 30: Processing unit (grinding unit) 32: Spindle 34: Mounting piece 36: Grinding wheel 38: grinding wheel abutment 40: grinding stone 50: Processing chips 52: Fluid
圖1係表示被加工物之立體圖。 圖2（A）係表示加工裝置之局部剖面前視圖，圖2（B）係表示卡盤台之俯視圖。 圖3（A）係表示在加工步驟中的加工裝置之局部剖面前視圖，圖3（B）係放大表示在加工步驟中的被加工物及卡盤台之剖面圖。 圖4（A）係表示在卸除步驟中的加工裝置之剖面圖，圖4（B）係放大表示在卸除步驟中的被加工物及卡盤台之剖面圖。Fig. 1 is a perspective view showing a workpiece. Fig. 2(A) is a partial sectional front view of the processing device, and Fig. 2(B) is a top view of the chuck table. Fig. 3(A) is a partial sectional front view showing a processing device in a processing step, and Fig. 3(B) is an enlarged sectional view showing a workpiece and a chuck table in a processing step. Fig. 4(A) is a sectional view showing the machining device in the unloading step, and Fig. 4(B) is an enlarged sectional view showing the workpiece and the chuck table in the unloading step.
2:加工裝置 2: Processing device
4:卡盤台 4: Chuck table
6:框體(本體部) 6: Frame (body part)
6a:上表面 6a: Upper surface
6b:凹部 6b: Concave
8:第一多孔部 8: The first porous part
8a:保持面 8a: Keep the surface
10:第二多孔部 10: The second porous part
10a:保持面 10a: Keep the surface
11:被加工物 11: Processed object
11a:正面 11a: front
11b:背面 11b: back
12:分隔部 12: Partition
14:閥件 14: valve parts
16:閥件 16: valve parts
17:保護構件(保護膠膜) 17: Protective components (protective film)
18:閥件 18: Valve
20:吸引源 20: Source of Attraction
22a:閥件 22a: Valve
22b:閥件 22b: Valve
24:流體供給源 24: Fluid supply source
24a:水供給源 24a: Water supply source
24b:空氣供給源 24b: Air supply source
30:加工單元(研削單元) 30: Processing unit (grinding unit)
32:主軸 32:Spindle
34:安裝件 34: Mounting parts
36:研削輪 36: Grinding wheel
38:研削輪基台 38: Grinding Wheel Abutment
40:研削磨石 40: Grinding Whetstone
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018231760A JP7251899B2 (en) | 2018-12-11 | 2018-12-11 | Workpiece processing method |
| JP2018-231760 | 2018-12-11 |
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| TW202022941A TW202022941A (en) | 2020-06-16 |
| TWI808283B true TWI808283B (en) | 2023-07-11 |
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| TW108144932A TWI808283B (en) | 2018-12-11 | 2019-12-09 | The processing method of the processed object |
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| JP (1) | JP7251899B2 (en) |
| KR (1) | KR20200071660A (en) |
| CN (1) | CN111312615B (en) |
| TW (1) | TWI808283B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332410A (en) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | Vacuum sucking apparatus |
| JP2012020374A (en) * | 2010-07-15 | 2012-02-02 | Disco Corp | Grinding device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009056518A (en) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | Suction device, machining system having the same, and machining method |
| JP5183169B2 (en) * | 2007-11-28 | 2013-04-17 | 株式会社東京精密 | Wafer processing equipment |
| JP5955635B2 (en) | 2012-05-11 | 2016-07-20 | 株式会社ディスコ | Cleaning device |
| US10199244B2 (en) * | 2015-08-11 | 2019-02-05 | Canon Kabushiki Kaisha | Imprint apparatus, and method of manufacturing article |
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- 2019-11-22 KR KR1020190151131A patent/KR20200071660A/en not_active Application Discontinuation
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332410A (en) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | Vacuum sucking apparatus |
| JP2012020374A (en) * | 2010-07-15 | 2012-02-02 | Disco Corp | Grinding device |
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| JP2020093330A (en) | 2020-06-18 |
| CN111312615A (en) | 2020-06-19 |
| CN111312615B (en) | 2024-04-12 |
| TW202022941A (en) | 2020-06-16 |
| JP7251899B2 (en) | 2023-04-04 |
| KR20200071660A (en) | 2020-06-19 |
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