TW202208079A - Workpiece cleaning method having a removing step for removing the cleaning liquid attached on the lower surface side of the workpiece - Google Patents
Workpiece cleaning method having a removing step for removing the cleaning liquid attached on the lower surface side of the workpiece Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
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- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
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Abstract
Description
本發明係關於一種清洗經施行研削加工等加工之被加工物的被加工物之清洗方法。The present invention relates to a cleaning method for cleaning a workpiece which has been subjected to grinding processing or the like.
在元件晶片的製造步驟中,使用在藉由互相交叉的多條分割預定線(切割道)所劃分之多個區域分別形成有元件的晶圓。藉由沿著分割預定線分割此晶圓,而得到分別具備元件的多個元件晶片。元件晶片裝配於行動電話、個人電腦等各式各樣的電子設備。In the manufacturing step of the element wafer, a wafer in which elements are formed in each of a plurality of regions divided by a plurality of planned division lines (dicing lines) intersecting with each other is used. By dividing this wafer along the dividing line, a plurality of element wafers each including elements are obtained. Component chips are assembled in various electronic devices such as mobile phones and personal computers.
近幾年,隨著電子設備的小型化,而對元件晶片要求薄型化。於是,使用將分割前的晶圓進行研削而薄化的手法。在晶圓的研削中,使用研削裝置,所述研削裝置具備:保持被加工物之卡盤台與研削被加工物之研削單元。研削單元裝設具有多個研削磨石之研削輪。然後,藉由卡盤台保持晶圓,並一邊使卡盤台以及研削輪旋轉一邊使研削磨石與晶圓接觸,藉此研削晶圓。In recent years, with the miniaturization of electronic devices, thinning of element wafers has been demanded. Then, the method of grinding and thinning the wafer before division is used. In the grinding of wafers, a grinding apparatus including a chuck table for holding a workpiece and a grinding unit for grinding the workpiece are used. The grinding unit is equipped with a grinding wheel having a plurality of grinding stones. Then, the wafer is ground by holding the wafer by the chuck table, and by bringing the grinding stone into contact with the wafer while rotating the chuck table and the grinding wheel.
在以研削裝置研削晶圓時,首先,藉由保護膠膜等保護構件,覆蓋形成於晶圓的正面側之多個元件。然後,透過保護構件而以卡盤台的保持面保持晶圓的正面側,並藉由研削磨石研削晶圓的背面側。在研削加工中,藉由保護構件保護形成於晶圓之元件,而防止元件的損傷。When grinding a wafer with a grinding apparatus, first, a plurality of elements formed on the front side of the wafer are covered with a protective member such as a protective film. Then, the front side of the wafer is held by the holding surface of the chuck table through the protective member, and the back side of the wafer is ground with a grinding stone. In the grinding process, the element formed on the wafer is protected by the protective member, and the element is prevented from being damaged.
此外,若以研削磨石研削晶圓,則因研削而產生的碎屑(加工屑)會四散。然後,加工屑有時會進入固定於晶圓之保護構件與卡盤台的保持面之間,並附著於保護構件。此情形,若在研削加工後從卡盤台上搬送晶圓,則附著於保護構件之加工屑也會與晶圓一起被搬送。其結果,加工屑在研削裝置內擴散,有研削裝置的內部被加工屑污染之虞。In addition, when a wafer is ground with a grinding stone, chips (processing chips) generated by the grinding are scattered. Then, machining chips may enter between the protective member fixed to the wafer and the holding surface of the chuck table, and adhere to the protective member. In this case, when the wafer is transferred from the chuck table after the grinding process, the machining chips adhering to the protective member are also transferred together with the wafer. As a result, the machining chips spread in the grinding device, and the inside of the grinding device may be contaminated with the machining chips.
於是,在從卡盤台上搬送研削加工後的晶圓時,有時會進行固定於晶圓之保護構件的清洗。在專利文獻1中,揭示了一種研削裝置,其在與晶圓的搬送路徑重疊之位置設置有清洗機構,所述清洗機構清洗貼附於晶圓之保護膠膜。藉由在搬送晶圓時清洗保護膠膜,而可防止晶圓的搬送目的地被附著於保護膠膜之加工屑所污染。 [習知技術文獻] [專利文獻]Therefore, when the ground wafer is conveyed from the chuck table, cleaning of the protective member fixed to the wafer may be performed. Patent Document 1 discloses a grinding apparatus in which a cleaning mechanism is provided at a position overlapping a conveyance path of the wafer, and the cleaning mechanism cleans the protective film attached to the wafer. By cleaning the protective film when the wafer is transported, it is possible to prevent the transfer destination of the wafer from being contaminated by the processing chips adhering to the protective film. [Previously known technical literature] [Patent Literature]
[專利文獻1]日本特開2010-94785號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-94785
[發明所欲解決的課題] 如上述,在加工被加工物的加工裝置中,有時會裝配清洗機構,所述清洗機構在搬送加工物時清洗固定於被加工物之保護構件。例如,清洗機構係藉由一邊對保護構件供給清洗液一邊以海綿等清洗構件摩擦保護構件,而去除附著於保護構件之加工屑。[Problems to be solved by the invention] As described above, a processing apparatus for processing a workpiece may be equipped with a cleaning mechanism that cleans the protective member fixed to the workpiece when the workpiece is conveyed. For example, the cleaning mechanism removes machining chips adhering to the protective member by rubbing the protective member with the cleaning member such as a sponge while supplying the cleaning liquid to the protective member.
然而,若使用清洗液清洗保護構件,則清洗液會殘留於清洗後的保護構件。然後,若在清洗液附著於保護構件的狀態下搬送被加工物,則清洗液會混入被加工物的搬送目的地,而有清洗液附著於加工裝置內未預期的區域之情形。藉此,會產生構成加工裝置之構成要素的劣化、故障等各式各樣的不利狀況。However, when the protective member is cleaned with a cleaning liquid, the cleaning liquid will remain on the protective member after cleaning. Then, when the workpiece is conveyed with the cleaning liquid adhered to the protective member, the cleaning liquid may be mixed into the conveying destination of the workpiece, and the cleaning liquid may adhere to an unexpected area in the processing apparatus. As a result, various inconveniences such as deterioration and failure of the constituent elements constituting the processing apparatus occur.
並且,為了去除附著於保護構件之清洗液,有時也會在與清洗後的被加工物的搬送路徑重疊之位置設置噴嘴(乾燥噴嘴),所述噴嘴係藉由噴射氣體而使保護構件乾燥並去除清洗液。然而,為了以乾燥噴嘴確實地去除清洗液,在固定有保護構件之被加工物通過乾燥噴嘴的上方時,需要使晶圓減速或停止,將氣體充分地吹附至保護構件。藉此,被加工物的搬送作業會延遲,加工裝置的運行效率會降低。In addition, in order to remove the cleaning liquid adhering to the protective member, a nozzle (drying nozzle) may be provided at a position overlapping the conveyance path of the workpiece after cleaning, and the nozzle dries the protective member by spraying gas. and remove the cleaning fluid. However, in order to reliably remove the cleaning liquid with the drying nozzle, when the workpiece to which the protective member is fixed passes over the drying nozzle, it is necessary to decelerate or stop the wafer to sufficiently blow gas onto the protective member. Thereby, the conveyance operation of the workpiece is delayed, and the operation efficiency of the processing apparatus is lowered.
另一方面,為了快速去除清洗液,也正探討提高從乾燥噴嘴所噴出之氣體的流量或流速之手法。然而,若將氣體強力地吹附至保護構件,則有附著於保護構件之清洗液會被猛然地吹走而飛散,清洗液會附著於加工裝置內部未預期的區域之虞。On the other hand, in order to quickly remove the cleaning liquid, a method of increasing the flow rate or flow velocity of the gas ejected from the drying nozzle is also being studied. However, if the gas is strongly blown to the protective member, the cleaning liquid adhering to the protective member is suddenly blown away and scattered, and the cleaning liquid may adhere to an unexpected area inside the processing apparatus.
本發明是有鑑於此問題而完成的發明,其目的在於提供一種能有效地去除附著於被加工物等之清洗液的被加工物之清洗方法。The present invention has been made in view of such a problem, and an object thereof is to provide a cleaning method of a workpiece which can effectively remove the cleaning liquid adhering to the workpiece or the like.
[解決課題的技術手段] 依據本發明的一個態樣,提供一種被加工物之清洗方法,其在加工裝置內清洗被加工物,該加工裝置具備:卡盤台,其保持該被加工物的下表面側;加工單元,其加工藉由該卡盤台所保持之該被加工物的上表面側;搬送機構,其包含具有吸引面的吸引墊,所述吸引面吸引保持藉由該卡盤台所保持且已藉由該加工單元所加工之該被加工物的上表面側;以及清洗機構,其設置於與該吸引墊的移動路徑重疊之位置,且包含清洗該被加工物的下表面側之清洗構件與噴射清洗液之噴射噴嘴,並且,所述被加工物之清洗方法具備:清洗步驟,其一邊從該噴射噴嘴對該被加工物的下表面側噴射該清洗液,一邊使該清洗構件與該被加工物的下表面側接觸並移動,藉此清洗該被加工物的下表面側;以及去除步驟,其在停止來自該噴射噴嘴之該清洗液的噴射之狀態下,使該清洗構件與該被加工物的下表面側接觸並移動,藉此去除附著於該被加工物的下表面側之該清洗液。[Technical means to solve the problem] According to one aspect of the present invention, there is provided a method for cleaning a workpiece, which cleans the workpiece in a processing apparatus, the processing apparatus including: a chuck table for holding the lower surface side of the workpiece; and a processing unit, The upper surface side of the workpiece held by the chuck table is processed; the conveying mechanism includes a suction pad having a suction surface that is held by the chuck table and has been processed by the processing The upper surface side of the workpiece processed by the unit; and a cleaning mechanism, which is arranged at a position overlapping with the moving path of the suction pad, and includes a cleaning member for cleaning the lower surface side of the workpiece and a spray cleaning liquid. A spray nozzle, and the method for cleaning a workpiece includes a cleaning step of spraying the cleaning liquid from the spray nozzle to the lower surface side of the workpiece while causing the cleaning member and the lower surface of the workpiece to be The surface side contacts and moves, thereby cleaning the lower surface side of the workpiece; and a removing step of causing the cleaning member to be in contact with the lower surface of the workpiece in a state where the ejection of the cleaning liquid from the ejection nozzle is stopped The surface side contacts and moves, thereby removing the cleaning liquid adhering to the lower surface side of the workpiece.
此外,較佳為,在該被加工物的下表面側固定有保護該被加工物之保護構件,在該清洗步驟中,清洗該保護構件,在該去除步驟中,去除附著於該保護構件之該清洗液。並且,較佳為,該被加工物之清洗方法進一步具備:乾燥步驟,其在實施該去除步驟後,對該被加工物的下表面側噴射氣體而使該被加工物乾燥。In addition, it is preferable that a protection member for protecting the workpiece is fixed to the lower surface side of the workpiece, in the cleaning step, the protection member is cleaned, and in the removal step, the protection member adhered to the protection member is removed. the cleaning solution. Furthermore, it is preferable that the cleaning method of the workpiece further includes a drying step of drying the workpiece by spraying gas on the lower surface side of the workpiece after the removal step is performed.
[發明功效] 在本發明之一態樣的被加工物之清洗方法中,在去除步驟去除於清洗步驟中附著於被加工物的下表面側之清洗液。藉此,清洗後的被加工物係在已去除清洗液的狀態下被搬送,而防止清洗液混入被加工物的搬送目的地。其結果,可避免清洗液附著於加工裝置內未預期的區域,而抑制產生起因於清洗液之不利狀況。並且,在上述的被加工物之清洗方法中,於清洗步驟結束後,只要停止來自噴射噴嘴之清洗液的噴射,便可立即轉移至去除步驟。因此,可大幅削減去除清洗液所需的時間,實現有效率地去除清洗液。[Inventive effect] In the cleaning method of the workpiece according to one aspect of the present invention, the cleaning liquid adhering to the lower surface side of the workpiece in the cleaning step is removed in the removing step. Thereby, the workpiece after cleaning is conveyed in a state in which the cleaning liquid has been removed, and the cleaning liquid is prevented from being mixed into the conveying destination of the workpiece. As a result, it is possible to prevent the cleaning liquid from adhering to an unexpected area in the processing apparatus, and to suppress the occurrence of an unfavorable situation caused by the cleaning liquid. In addition, in the above-mentioned cleaning method of the workpiece, after the cleaning step is completed, as long as the spraying of the cleaning liquid from the spray nozzle is stopped, the process can be immediately shifted to the removal step. Therefore, the time required to remove the cleaning liquid can be greatly reduced, and the cleaning liquid can be removed efficiently.
以下,參照隨附圖式,說明本發明之一態樣的實施方式。首先,針對能用於本實施方式的被加工物之清洗方法的加工裝置的構成例進行說明。圖1為顯示研削被加工物之加工裝置(研削裝置)2的立體圖。此外,在圖1中,X軸方向(左右方向、第一水平方向)與Y軸方向(前後方向、第二水平方向)是互相垂直的方向。並且,Z軸方向(垂直方向、上下方向、高度方向)是與X軸方向及Y軸方向垂直的方向。Hereinafter, an embodiment of one aspect of the present invention will be described with reference to the accompanying drawings. First, the structural example of the processing apparatus which can be used for the to-be-processed object washing|cleaning method of this embodiment is demonstrated. FIG. 1 is a perspective view showing a processing apparatus (grinding apparatus) 2 for grinding a workpiece. In addition, in FIG. 1, the X-axis direction (left-right direction, 1st horizontal direction) and the Y-axis direction (front-back direction, 2nd horizontal direction) are mutually perpendicular|vertical directions. In addition, the Z-axis direction (vertical direction, vertical direction, height direction) is a direction perpendicular to the X-axis direction and the Y-axis direction.
加工裝置2具備:基台4,其支撐及容納構成加工裝置2之各構成要素。在基台4的前端部的上表面側設置有矩形狀的開口4a。在開口4a的內部設置有搬送機構(搬送單元)6,所述搬送機構(搬送單元)6係搬送藉由加工裝置2所加工之被加工物。The
在搬送機構6的兩側設置有卡匣配置區域8a、8b。在卡匣配置區域8a、8b上分別配置能容納多個被加工物之卡匣10a、10b。在卡匣10a中容納藉由加工裝置2所加工之預定的多個被加工物(未加工的被加工物)。另一方面,在卡匣10b中容納已藉由加工裝置2所加工之多個被加工物(加工完畢的被加工物)。On both sides of the
圖2為顯示被加工物11的立體圖。被加工物11例如是以矽等半導體材料而成之圓盤狀的晶圓,且具備互相大致平行的正面(第一面)11a及背面(第二面)11b。被加工物11藉由以互相交叉之方式排列成格子狀之多條分割預定線(切割道)13而被劃分成多個矩形狀的區域。並且,在藉由分割預定線13所劃分之多個區域的正面11a側分別形成有IC(Integrated Circuit,積體電路)、LSI(Large Scale Integration,大型積體電路)、LED(Light Emitting Diode,發光二極體)、MEMS(Micro Electro Mechanical Systems,微機電系統)等元件15。FIG. 2 is a perspective view showing the
此外,對被加工物11的材質、形狀、構造、大小等並無限制。例如,被加工物11也可為以矽以外的半導體(GaAs、InP、GaN、SiC等)、藍寶石、玻璃、陶瓷等而成之基板(晶圓)。並且,對元件15的種類、數量、形狀、構造、大小、配置等亦無限制,在被加工物11也可未形成有元件15。In addition, the material, shape, structure, size, etc. of the
若沿著分割預定線13分割被加工物11,則製造分別具備元件15之多個元件晶片。並且,在分割被加工物11前藉由加工裝置2(參照圖1)將被加工物11進行研削並薄化,藉此能得到經薄型化之元件晶片。例如,藉由加工裝置2而研削被加工物11的背面11b側。When the
在藉由加工裝置2而研削被加工物11時,在被加工物11的正面11a側固定保護構件17。作為保護構件17,能使用柔軟的薄膜狀的膠膜(保護膠膜)等。保護膠膜包含:被形成為與被加工物11大致相同直徑之圓形基材與設置於基材上之黏著層(糊層)。例如,基材係以聚烯烴、聚氯乙烯、聚對苯二甲酸乙二酯等樹脂而成,黏著層係以環氧系、丙烯酸系或橡膠系的接著劑等而成。並且,作為黏著層,也可使用藉由照射紫外線而硬化之紫外線硬化型的樹脂。When the
保護構件17係以覆蓋被加工物11的正面11a側整體之方式,被貼附、固定於被加工物11。藉此,藉由保護構件17而覆蓋並保護多個元件15。然後,被加工物11係在已固定保護構件17的狀態下,被容納於卡匣10a(參照圖1)。例如,被加工物11係以正面11a側(保護構件17側)朝向上方且背面11b側朝向下方之方式被配置於卡匣10a內。然後,已容納多個被加工物11之卡匣10a被配置於卡匣配置區域8a上。The
在開口4a的斜後方設置有對位機構(對準機構)12。容納於卡匣10a之被加工物11係藉由搬送機構6而被搬送至對位機構12。具體而言,首先,藉由搬送機構6的前端部(吸引墊)吸引容納於卡匣10a之加工物11的下表面側(背面11b側),並從卡匣10a抽出被加工物11。接著,搬送機構6的前端部旋轉,被加工物11的上下反轉。其後,搬送機構6將被加工物11以背面11b側露出於上方之方式配置於對位機構12上。然後,對位機構12將被加工物11對齊並配置於預定的位置。An alignment mechanism (alignment mechanism) 12 is provided obliquely rearward of the
在與對位機構12相鄰的位置設置有搬送被加工物11之搬送機構(搬送單元、裝載臂)14。搬送機構14係在保持已藉由對位機構12進行對位之被加工物11的上表面側(背面11b側)的狀態下進行回旋,並將被加工物11搬送至後方。A transport mechanism (transport unit, loading arm) 14 for transporting the
在基台4的上表面側中位於搬送機構14的後方之區域設置有矩形狀的開口4b。在開口4b的內部設置有圓盤狀的旋轉台16。馬達等旋轉驅動源(未圖示)連結於旋轉台16,旋轉驅動源使旋轉台16繞著與Z軸方向大致平行的旋轉軸進行旋轉。A
在旋轉台16上設置有保持被加工物11之多個卡盤台(保持台)18。在圖1中,顯示沿著旋轉台16的周方向而大致等間隔地配置有三個卡盤台18之例。然而,卡盤台18的數量及配置並無限制。The
卡盤台18的上表面構成保持被加工物11之平坦的保持面18a。例如,保持面18a係與被加工物11的形狀對應而被形成為圓形。保持面18a係透過形成於卡盤台18的內部之流路(未圖示)、閥(未圖示)而連接於噴射器等吸引源。並且,卡盤台18分別連接馬達等旋轉驅動源(未圖示)。旋轉驅動源使卡盤台18繞著與Z軸方向大致平行的旋轉軸進行旋轉。The upper surface of the chuck table 18 constitutes a
旋轉台16係在俯視下呈逆時針方向旋轉。藉此,將各卡盤台18以搬送位置A、第一研削位置(粗研削位置)B、第二研削位置(精研削位置)C、搬送位置A的順序進行定位。The
在旋轉台16的後方配置有長方體狀的支撐構造20。在支撐構造20的前表面側固定有一對移動機構(移動單元)22a、22b。此外,移動機構22a被配置於卡盤台18的後方,所述卡盤台18被配置於第一研削位置B,而移動機構22b被配置於卡盤台18的後方,所述卡盤台18被配置於第二研削位置C。A rectangular parallelepiped-shaped
移動機構22a、22b分別具備與Z軸方向大致平行配置的一對導軌24。板狀的移動板26係以能沿著導軌24滑動的狀態被裝設於一對導軌24。在移動板26的後表面側(背面側)設置有螺帽部(未圖示),與導軌24大致平行配置之滾珠螺桿28螺合於此螺帽部。並且,脈衝馬達30連結於滾珠螺桿28的端部。若以脈衝馬達30使滾珠螺桿28旋轉,則移動板26沿著Z軸方向移動。The moving
在移動機構22a的移動板26的前表面側(正面側)固定有支撐器具32,所述支撐器具32支撐進行被加工物11的粗研削之加工單元(研削單元)34a。另一方面,在移動機構22b的移動板26的前表面側(正面側)固定有支撐器具32,所述支撐器具32支撐進行被加工物11的精研削之加工單元(研削單元)34b。若使移動機構22a的移動板26升降,則加工單元34a沿著Z軸方向移動。並且,若使移動機構22b的移動板26升降,則加工單元34b沿著Z軸方向移動。A
加工單元34a、34b分別具備藉由支撐器具32所支撐之圓柱狀的外殼36。在外殼36容納有沿著Z軸方向配置之圓柱狀的主軸38。主軸38的前端部(下端部)從外殼36露出,在主軸38的下端部固定有以金屬等而成之圓盤狀的安裝件40。並且,馬達等旋轉驅動源(未圖示)連結於主軸38的基端部(上端部),旋轉驅動源使主軸38繞著與Z軸方向大致平行的旋轉軸進行旋轉。The
在加工單元34a的安裝件40的下表面側裝設粗研削用的研削輪42a。並且,在加工單元34b的安裝件40的下表面側安裝精研削用的研削輪42b。研削輪42a、42b係藉由來自旋轉驅動源且透過主軸38及安裝件40所傳遞之動力,而繞著與Z軸方向大致平行的旋轉軸進行旋轉。A
研削輪42a具備以金屬等而成且被形成為與安裝件40大致相同直徑之環狀的基台。並且,在基台的下表面側固定有多個長方體狀的研削磨石。多個研削磨石係沿著基台的周方向而被排列成環狀。The grinding
例如,研削磨石係藉由將以金剛石、cBN(cubic Boron Nitride,立方氮化硼)等而成之磨粒以金屬結合劑、樹脂結合劑、陶瓷結合劑等結合劑固定而形成。然而,對研削磨石的材質、形狀、構造、大小等並無限制,研削磨石的個數也可任意地設定。For example, a grinding stone is formed by fixing abrasive grains made of diamond, cBN (cubic Boron Nitride, cubic boron nitride), or the like with a bonding agent such as a metal bond, a resin bond, or a ceramic bond. However, the material, shape, structure, size, etc. of the grinding stones are not limited, and the number of the grinding stones can be arbitrarily set.
研削輪42b也與研削輪42a同樣地構成。但是,研削輪42b的研削磨石所含之磨粒的平均粒徑小於研削輪42a的研削磨石所含之磨粒的平均粒徑。The grinding wheel 42b is also configured in the same manner as the
加工單元34a係以研削輪42a研削藉由被定位於第一研削位置B之卡盤台18所保持之被加工物11。藉此,對被加工物11施行粗研削。並且,加工單元34b係以研削輪42b研削藉由被定位於第二研削位置C之卡盤台18所保持之被加工物11。藉此,對被加工物11施行精研削。The
在加工單元34a、34b的內部或附近分別設置用於供給純水等液體(研削液)之研削液供給路徑(未圖示)。在對被加工物11施行研削加工時,研削液被供給至被加工物11及研削磨石。A grinding fluid supply path (not shown) for supplying a liquid (grinding fluid) such as pure water is provided in or near the
已藉由對位機構12進行對位之被加工物11(參照圖2)係藉由搬送機構14而被搬送至配置於搬送位置A之卡盤台18上。然後,若使吸引源的負壓作用於卡盤台18的保持面18a,則被加工物11的正面11a側會透過保護構件17而被卡盤台18吸引保持。The workpiece 11 (see FIG. 2 ) that has been aligned by the
接著,旋轉台16旋轉,將保持被加工物11之卡盤台18定位於第一研削位置B。然後,一邊使卡盤台18與研削輪42a分別旋轉,一邊使研削輪42a朝向卡盤台18側下降。若研削輪42a的研削磨石與被加工物11的上表面側(背面11b側)接觸,則會削去被加工物11的背面11b,對被加工物11施行粗研削。Next, the
接著,旋轉台16旋轉,將保持被加工物11之卡盤台18定位於第二研削位置C。然後,一邊使卡盤台18與研削輪42b分別旋轉,一邊使研削輪42b朝向卡盤台18側下降。若研削輪42b的研削磨石與被加工物11的上表面側(背面11b側)接觸,則會削去被加工物11的背面11b,對被加工物11施行精研削。Next, the
如上述,藉由加工單元34a、34b而加工被加工物11的上表面側,將被加工物11薄化至預定的厚度。此外,於研削加工中,因研削被加工物11而產生的碎屑(加工屑)會四散。然後,加工屑會有進入被固定於被加工物11之保護構件17(參照圖2)與卡盤台18的保持面18a之間,並附著於保護構件17之情形。其後,旋轉台16旋轉,將保持被加工物11之卡盤台18再次定位於搬送位置A。As described above, the upper surface side of the
在與搬送機構14於X軸方向相鄰的位置設置有搬送被加工物11之搬送機構(搬送單元、卸載臂)44。搬送機構44在保持藉由配置於搬送位置A之卡盤台18所保持之被加工物11的上表面側(背面11b側)之狀態下回旋,並將被加工物11搬送至前方。A transport mechanism (transport unit, unloading arm) 44 for transporting the
在搬送機構44的前方側配置有清洗機構(清洗單元)46,所述清洗機構(清洗單元)46清洗藉由搬送機構44所搬送之被加工物11的上表面側。藉由搬送機構44所保持之被加工物11被搬送至清洗機構46並被清洗。然後,藉由清洗機構46所清洗之被加工物11被搬送機構6搬送,並被容納於卡匣10b內。A cleaning mechanism (cleaning unit) 46 for cleaning the upper surface side of the
並且,在開口4b的內部設置有清洗機構(清洗單元)48與乾燥噴嘴50,所述清洗機構(清洗單元)48清洗被加工物11的下表面側,所述乾燥噴嘴50噴射用於使被加工物11乾燥的氣體。清洗機構48及乾燥噴嘴50被配置於與藉由搬送機構44所搬送之被加工物11的移動路徑重疊之位置。此外,關於清洗機構48及乾燥噴嘴50的構造及功能的詳細內容,將於後述。In addition, a cleaning mechanism (cleaning unit) 48 for cleaning the lower surface side of the
在基台4的前端部的上表面側設置用於對加工裝置2輸入資訊的輸入單元(輸入部)52。例如,輸入單元52係藉由操作面板所構成,操作員可操作輸入單元52而對加工裝置2輸入加工條件等資訊。An input unit (input unit) 52 for inputting information to the
並且,加工裝置2具備控制單元(控制部)54,所述控制單元(控制部)54連接於構成加工裝置2之各構成要素(搬送機構6、對位機構12、搬送機構14、旋轉台16、卡盤台18、移動機構22a、22b、加工單元34a、34b、搬送機構44、清洗機構46、清洗機構48、乾燥噴嘴50、輸入單元52等)。藉由控制單元54,控制加工裝置2的構成要素的動作。Further, the
例如,控制單元54係藉由電腦所構成,包含運算部與記憶部,所述運算部進行加工裝置2的運行所需之運算,所述記憶部記憶能用於由運算部所進行之運算的各種資訊(資料、程式等)。運算部係包含CPU(Central Processing Unit,中央處理單元)等處理器而構成。並且,記憶部係包含發揮作為主記憶裝置、輔助記憶裝置等的功能的各種記憶體而構成。控制單元54藉由執行記憶部所記憶的程式,而生成用於控制加工裝置2的構成要素之控制訊號。For example, the
接著,針對裝配於加工裝置2之搬送機構44及清洗機構48的詳細內容進行說明。圖3為顯示搬送機構44的局部剖面側視圖。Next, the details of the
搬送機構44具備L字狀的臂60。臂60具備:圓柱狀的基部62,其沿著Z軸方向而配置;以及棒狀的支撐部64,其從基部62的上端側於水平方向突出。基部62的下端側連結於升降機構66,所述升降機構66使臂60沿著Z軸方向升降。例如,作為升降機構66,可使用氣缸等。並且,升降機構66的下端側連結有馬達等旋轉驅動源68,所述旋轉驅動源68係使臂60及升降機構66繞著與Z軸方向大致平行的旋轉軸雙向地旋轉。The
臂60的支撐部64在其內部具備沿著支撐部64的長度方向而設置之圓柱狀的開口部64a。並且,在支撐部64的前端部設置有將支撐部64上下貫通之圓柱狀的貫通孔64b,開口部64a的前端部連接於貫通孔64b。再者,在支撐部64的前端部的上端側形成有連接於貫通孔64b之圓柱狀的槽64c。槽64c係直徑大於貫通孔64b,且在支撐部64的上端開口。The
在支撐部64的前端部裝設有保持被加工物11之吸引墊70。若藉由旋轉驅動源68使臂60旋轉,則吸引墊70會在配置於搬送位置A之卡盤台18(參照圖1)與清洗機構46(參照圖1)之間沿著水平方向(XY平面方向)移動。此時,吸引墊70係以臂60的基部62作為旋轉軸,沿著圓弧狀的移動路徑移動。A
吸引墊70具備以金屬等而成之基台72。基台72具備:圓盤狀的本體部(框體)74;以及圓柱狀的支撐部(支撐軸)76,其從本體部74的中央部的上面側往上方突出。在本體部74的中央部的下表面側設置有圓柱狀的凹部74a。而且,在凹部74a嵌入以多孔陶瓷等多孔構件而成之圓盤狀的吸引構件78。吸引構件78的下表面構成吸引保持被加工物11的上表面側之吸引面78a。The
支撐部76的上端側***被設置於臂60的支撐部64之貫通孔64b。並且,在支撐部76的上端部設置有圓盤狀的突起部76a,所述圓盤狀的突起部76a係從支撐部76的外周面往支撐部76的半徑方向外側突出。藉由將突起部76a嵌入支撐部64的槽64c,而將吸引墊70裝設於臂60。The upper end side of the
若將吸引墊70裝設於臂60,則吸引構件78會透過形成於基台72的內部之流路72a而與設置於臂60的開口部64a之配管80連接。配管80例如是撓性管等具有可撓性的管,並透過閥(未圖示)而連接於噴射器等吸引源(未圖示)。When the
在臂60的支撐部64與基台72的本體部74之間設置有多個賦能構件82。作為賦能構件82,例如使用螺旋彈簧。賦能構件82的一端側固定於支撐部64的下端側,賦能構件82的另一端側固定於基台72的本體部74的上表面側。藉此,吸引墊70朝向下方並被賦予勢能。A plurality of energizing
在將吸引墊70定位在配置於搬送位置A之卡盤台18(參照圖1)的上方之狀態下,若藉由升降機構66使吸引墊70下降,則吸引墊70的吸引面78a與藉由卡盤台18所保持之被加工物11的上表面側(背面11b側)接觸。在此狀態下,若使連接於配管80之吸引源(未圖示)的負壓作用於吸引面78a,則被加工物11被吸引墊70吸引保持。然後,在以吸引墊70保持被加工物11的狀態下,若藉由旋轉驅動源68而使吸引墊70旋轉,則被加工物11被搬送至清洗機構46(參照圖1)。In a state where the
此外,如圖1所示,在搬送機構44的吸引墊70的移動路徑的下方設置有清洗機構48。然後,在藉由搬送機構44搬送被加工物11時,藉由清洗機構48清洗被加工物11的下表面側。Further, as shown in FIG. 1 , the
圖4為顯示清洗機構48的立體圖。清洗機構48具備:沿著Z軸方向配置之中空的圓柱狀的外殼100與***外殼100之圓柱狀的軸(旋轉軸)102。軸102藉由設置於外殼100的內部之軸承(未圖示),而在能旋轉的狀態下被支撐。並且,軸102的下端部從外殼100的下端往下方突出。FIG. 4 is a perspective view showing the
軸102連結於使軸102繞著與Z軸方向大致平行的旋轉軸進行旋轉之馬達等旋轉驅動源104。具體而言,在軸102的下端部固定有從動滑輪106,在旋轉驅動源104的輸出軸(旋轉軸)固定有驅動滑輪108。並且,在從動滑輪106與驅動滑輪108架設有環狀的皮帶110。皮帶110例如是環狀的齒形皮帶,且連結從動滑輪106與驅動滑輪108。The
若旋轉驅動源104的輸出軸旋轉,則將輸出軸的轉矩透過驅動滑輪108、皮帶110、從動滑輪106而傳遞至軸102。如此一來,將旋轉驅動源104的動力傳遞至軸102,軸102旋轉。When the output shaft of the
在軸102的中央部設置有從軸102的上端到達下端之圓柱狀的貫通孔。而且,在軸102的貫通孔中***清洗單元112,所述清洗單元112清洗藉由搬送機構44的吸引墊70(參照圖3)所保持之被加工物11。具體而言,清洗單元112具備圓柱狀的支撐桿114,支撐桿114被***軸102的貫通孔。而且,支撐桿114的下端部從軸102的下端往下方突出。A cylindrical through hole extending from the upper end to the lower end of the
並且,清洗單元112具備設置於支撐桿114的上端側之保持構件116。例如,保持構件116係以金屬、樹脂等而成,且被形成為在俯視下呈十字型。而且,保持構件116的中央部的下表面側固定於支撐桿114的上端部。Further, the
在保持構件116上設置有清洗構件118,所述清洗構件118清洗藉由吸引墊70所保持之被加工物11(參照圖3)的下表面側。清洗構件118係沿著保持構件116的上表面被形成為在俯視下呈十字型,且從保持構件116的中央部朝向前端部配置成放射狀。The holding
例如,清洗構件118是以海綿、不織布等而成之柔軟構件。清洗構件118係與固定於被加工物11的下表面之保護構件17(參照圖3)接觸,並清洗保護構件17。此外,在被加工物11未固定有保護構件17之情形中,清洗構件118係與被加工物11的下表面(正面11a)接觸,並清洗被加工物11的下表面。For example, the cleaning
在保持構件116固定有從保持構件116的下表面往下方突出之多個驅動銷(未圖示)。並且,在軸102的上端側設置有在軸102的上端開口之多個***孔(未圖示)。若將支撐桿114***軸102的貫通孔,則多個驅動銷會分別***並嵌入軸102的***孔。藉此,軸102與清洗單元112一體化。然後,若藉由旋轉驅動源104而使軸102旋轉,則保持構件116及清洗構件118會與軸102連動並繞著與Z軸方向大致平行的旋轉軸進行旋轉。A plurality of drive pins (not shown) protruding downward from the lower surface of the holding
支撐桿114的下端側連結於使支撐桿114升降之升降機構120。具體而言,升降機構120具備藉由升降機構120的動力而升降之升降部122,升降部122固定於支撐桿114的下端部。例如,使用氣缸作為升降機構120,氣缸的活塞桿發揮作為升降部122的功能。若使升降機構120驅動,則清洗單元112的清洗構件118會與升降部122的升降連動而升降。The lower end side of the
並且,在軸102的上端部設置有噴射清洗液之一對噴射噴嘴124。例如,噴射噴嘴124係以一端側連接於軸102且另一端側配置於軸102的半徑方向外側之方式,沿著保持構件116配置。並且,噴射噴嘴124具備用於噴射清洗液之多個噴射口124a。In addition, a pair of jetting
噴射噴嘴124透過設置於軸102的內部之流路(未圖示)而連接於設置在外殼100之清洗液供給路徑100a。然後,若從清洗液供給源(未圖示)將純水等清洗液供給至清洗液供給路徑100a,則清洗液會流入噴射噴嘴124,並從噴射噴嘴124的噴射口124a朝向上方噴射。The
接著,針對使用清洗機構48清洗被加工物11的下表面側之方法的具體例進行說明。圖5為顯示清洗藉由吸引墊70所保持之被加工物11的下表面側之清洗機構48的局部剖面前視圖。Next, a specific example of a method of cleaning the lower surface side of the
藉由搬送機構44,從配置於搬送位置A之卡盤台18(參照圖1)上搬送已藉由加工單元34a、34b(參照圖1)所研削之被加工物11。具體而言,搬送機構44係在將吸引墊70定位於被加工物11的正上方之狀態下,使吸引墊70下降,並使吸引面78a與被加工物11的上表面側(背面11b側)接觸。若在此狀態下使吸引力(負壓)作用於吸引面78a,則藉由吸引墊70吸引保持被加工物11。然後,在解除由卡盤台18所進行之被加工物11的吸引後,搬送機構44藉由升降機構66及旋轉驅動源68(參照圖3)而使吸引墊70移動,並搬送被加工物11。The
在與藉由吸引墊70而將被加工物11從卡盤台18搬送往清洗機構46(參照圖1)時之吸引墊70的移動路徑重疊之位置設置有清洗機構48。然後,藉由清洗機構48清洗藉由吸引墊70所保持之被加工物11的下表面側(清洗步驟)。The
具體而言,搬送機構44係使保持被加工物11之吸引墊70在清洗機構48的清洗單元112的正上方停止。接著,藉由旋轉驅動源104(參照圖4)使軸102及清洗單元112旋轉,並藉由升降機構120(參照圖4)使清洗單元112上升。藉此,清洗構件118在與被加工物11的下表面側(正面11a側)接觸的狀態下移動(旋轉)。Specifically, the conveying
此外,在本實施方式中,因在被加工物11的下表面固定有保護構件17,故清洗構件118會與保護構件17接觸。但是,在被加工物11未固定有保護構件17之情形中,清洗構件118會與被加工物11的下表面(正面11a)接觸。In addition, in the present embodiment, since the
並且,在清洗構件118與被加工物11的下表面側接觸時,純水等清洗液會從噴射噴嘴124朝向被加工物11的下表面側噴射。因此,被加工物11的下表面側(保護構件17)會在附著有清洗液的狀態下被清洗構件118摩擦。其結果,附著於被加工物11的下表面側(保護構件17)之加工屑會被洗去。Then, when the cleaning
接著,去除附著於被加工物11的下表面側之清洗液(去除步驟)。具體而言,在維持清洗構件118的移動(旋轉)之狀態下,停止來自噴射噴嘴124之清洗液的噴射。藉此,在不將清洗液供給至被加工物11的下表面側(保護構件17)之狀態下,清洗構件118與被加工物11的下表面側接觸並移動。其結果,附著於被加工物11的下表面側之清洗液會被清洗構件118擦拭並去除。Next, the cleaning liquid adhering to the lower surface side of the
此外,在去除步驟中,只要殘留於被加工物11的下表面側之清洗液被清洗構件118擦拭即足夠,清洗構件118的旋轉數較少即可。例如,清洗構件118的旋轉數可設定為5以下,較佳為3以下。In addition, in the removing step, it is sufficient that the cleaning liquid remaining on the lower surface side of the
如同上述,在本實施方式的被加工物之清洗方法中,以去除步驟去除在清洗步驟中附著於被加工物11的下表面側之清洗液。藉此,清洗後的被加工物11在已去除清洗液的狀態下被搬送,而防止清洗液混入被加工物11的搬送目的地。其結果,可避免清洗液附著於加工裝置2內的未預期區域,而抑制產生起因於清洗液之不利狀況(加工裝置2的構成要素的劣化、故障等)。As described above, in the cleaning method of the workpiece of the present embodiment, the cleaning liquid adhering to the lower surface side of the
並且,在上述的被加工物之清洗方法中,於清洗步驟結束後,僅停止來自噴射噴嘴124之清洗液的噴射,便可立即轉移至去除步驟。因此,相較於在與清洗被加工物11不同的地方使用不同的設備實施清洗液的去除之情形,可大幅削減去除清洗液所需的時間,並實現有效率地去除清洗液。In addition, in the above-mentioned cleaning method of the workpiece, after the cleaning step is completed, only by stopping the spraying of the cleaning liquid from the
此外,依據附著於被加工物11的下表面側之清洗液的量、成分、清洗構件118的材質等,有難以藉由實施去除步驟而從被加工物11的下表面側完全去除清洗液之情形。在此情形中,於實施去除步驟後,也可對被加工物11的下表面側噴射氣體而使被加工物11乾燥(乾燥步驟)。In addition, depending on the amount and composition of the cleaning liquid adhering to the lower surface side of the
如圖1所示,在與吸引墊70的移動路徑重疊之位置設置有乾燥噴嘴50。例如,乾燥噴嘴50被形成為中空的圓柱狀,並沿著X軸方向配置於開口4b的前端部。乾燥噴嘴50連接於供給空氣等氣體之氣體供給源(未圖示),並從氣體供給源以預定的壓力將氣體供給至乾燥噴嘴50的內部。As shown in FIG. 1 , the drying
如圖3所示,乾燥噴嘴50具有連接乾燥噴嘴50的內部與外部之多個噴射口50a。例如,多個噴射口50a沿著乾燥噴嘴50的長度方向大致等間隔地排列。若將氣體供給至乾燥噴嘴50的內部,則會從多個噴射口50a噴射氣體。As shown in FIG. 3 , the drying
在保持有被加工物11之吸引墊70通過乾燥噴嘴50的上方時,會從乾燥噴嘴50往被加工物11的下表面側(保護構件)吹附氣體。藉此,進行被加工物11的乾燥,去除附著於被加工物11的下表面側(保護構件17)之清洗液。When the
此外,如圖3所示,噴射口50a較佳為被形成在比乾燥噴嘴50的上端更後方側(清洗機構48側)。此情形,氣體從乾燥噴嘴50朝向後方側噴射。藉此,附著於被加工物11的下表面側之清洗液變得難以飛散至加工裝置2的前方側,而防止清洗液混入加工裝置2的前方側。Moreover, as shown in FIG. 3, it is preferable that the
並且,上述的乾燥步驟係在藉由實施去除步驟而從被加工物11的下表面側去除大部分的清洗液後實施。因此,容易藉由從乾燥噴嘴50所噴射之氣體而去除殘留的清洗液。因而,在被加工物11通過乾燥噴嘴50的上方時,不需要使吸引墊70大幅減速或停止而使對被加工物11噴射氣體的時間增加之類的運行,而抑制被加工物11的搬送效率的降低。In addition, the above-mentioned drying step is performed after removing most of the cleaning liquid from the lower surface side of the
並且,在本實施方式中,雖針對在加工裝置(研削裝置)2內藉由清洗機構48清洗被加工物11的下表面側之例進行說明,但裝配清洗機構48之加工裝置並不限於研削裝置。例如,清洗機構48也可裝配於切割裝置、研磨裝置、雷射加工裝置等加工裝置。In addition, in the present embodiment, an example in which the lower surface side of the
切割裝置具備切割被加工物11之切割單元。切割單元具備主軸,並在主軸的前端部裝設用於切割被加工物11之環狀的切割刀片。藉由一邊使切割刀片旋轉一邊使其切入被加工物11,而切割被加工物11。The cutting device includes a cutting unit that cuts the
研磨裝置具備研磨被加工物11之研磨單元。研磨單元具備主軸,並在主軸的前端部裝設圓盤狀的研磨墊。藉由一邊使研磨墊旋轉一邊使其與被加工物11接觸,而研磨被加工物11。The polishing apparatus includes a polishing unit for polishing the
雷射加工裝置具備:雷射照射單元,其照射用於加工被加工物11的雷射光束。例如,雷射照射單元具備:雷射振盪器,其將預定波長的雷射脈衝振盪;及聚光器,其使由雷射振盪器所振盪之雷射聚光。藉由從雷射照射單元對晶圓照射雷射光束,而對被加工物11施行雷射加工。The laser processing apparatus includes a laser irradiation unit that irradiates a laser beam for processing the
在如上述般的各種加工裝置裝配保持加工後的被加工物11的上表面側之搬送機構(參照圖1的搬送機構44)與清洗機構48。然後,在藉由搬送機構搬送被加工物11時,藉由清洗機構48實施被加工物11的下表面側的清洗(清洗步驟)與清洗液的去除(去除步驟)。The conveyance mechanism (refer to the
另外,關於上述實施方式的構造、方法等,只要在不脫離本發明目的之範圍內,便可以適當變更而實施。In addition, about the structure, method, etc. of the above-mentioned embodiment, it can change suitably in the range which does not deviate from the objective of this invention, and can implement.
11:被加工物 11a:正面(第一面) 11b:背面(第二面) 13:分割預定線(切割道) 15:元件 17:保護構件 2:加工裝置(研削裝置) 4:基台 4a,4b:開口 6:搬送機構(搬送單元) 8a,8b:卡匣配置區域 10a,10b:卡匣 12:對位機構(對準機構) 14:搬送機構(搬送單元、裝載臂) 16:旋轉台 18:卡盤台(保持台) 18a:保持面 20:支撐構造 22a,22b:移動機構(移動單元) 24:導軌 26:移動板 28:滾珠螺桿 30:脈衝馬達 32:支撐器具 34a,34b:加工單元(研削單元) 36:外殼 38:主軸 40:安裝件 42a,42b:研削輪 44:搬送機構(搬送單元、卸載臂) 46:清洗機構(清洗單元) 48:清洗機構(清洗單元) 50:乾燥噴嘴 50a:噴射口 52:輸入單元(輸入部) 54:控制單元(控制部) 60:臂 62:基部 64:支撐部 64a:開口部 64b:貫通孔 64c:槽 66:升降機構 68:旋轉驅動源 70:吸引墊 72:基台 72a:流路 74:本體部(框體) 74a:凹部 76:支撐部(支撐軸) 76a:突起部 78:吸引構件 78a:吸引面 80:配管 82:賦能構件 100:外殼 100a:清洗液供給路徑 102:軸 104:旋轉驅動源 106:從動滑輪 108:驅動滑輪 110:皮帶 112:清洗單元 114:支撐桿 116:保持構件 118:清洗構件 120:升降機構 122:升降部 124:噴射噴嘴 124a:噴射口11: Processed objects 11a: Front (first side) 11b: Back (Second Side) 13: Divide the predetermined line (cutting road) 15: Components 17: Protective components 2: Processing device (grinding device) 4: Abutment 4a, 4b: Opening 6: Conveying mechanism (conveying unit) 8a, 8b: Cassette configuration area 10a, 10b: Cassette 12: Alignment mechanism (alignment mechanism) 14: Conveying mechanism (conveying unit, loading arm) 16: Rotary table 18: Chuck table (holding table) 18a: Keep Faces 20: Support structure 22a, 22b: Moving mechanism (moving unit) 24: Rails 26: Mobile board 28: Ball screw 30: Pulse motor 32: Support equipment 34a, 34b: Machining unit (grinding unit) 36: Shell 38: Spindle 40: Mounting pieces 42a, 42b: Grinding wheels 44: Conveying mechanism (conveying unit, unloading arm) 46: Cleaning mechanism (cleaning unit) 48: Cleaning mechanism (cleaning unit) 50: Drying Nozzle 50a: injection port 52: Input unit (input part) 54: Control unit (control section) 60: Arm 62: Base 64: Support Department 64a: Opening 64b: Through hole 64c: Slot 66: Lifting mechanism 68: Rotary drive source 70: Attraction Pad 72: Abutment 72a: flow path 74: Main body (frame) 74a: Recess 76: Support part (support shaft) 76a: Protrusions 78: Attract components 78a: Attracting surface 80: Piping 82: Enabling Components 100: Shell 100a: cleaning fluid supply path 102: Shaft 104: Rotary drive source 106: driven pulley 108: Drive pulley 110: Belt 112: Cleaning unit 114: Support rod 116: Keeping Components 118: Cleaning components 120: Lifting mechanism 122: Lifting department 124: jet nozzle 124a: jet port
圖1為顯示加工裝置的立體圖。 圖2為顯示被加工物的立體圖。 圖3為顯示搬送機構的局部剖面側視圖。 圖4為顯示清洗機構的立體圖。 圖5為顯示清洗被加工物的下表面側之清洗機構的局部剖面前視圖。FIG. 1 is a perspective view showing a processing apparatus. FIG. 2 is a perspective view showing a workpiece. FIG. 3 is a partial cross-sectional side view showing the conveying mechanism. FIG. 4 is a perspective view showing a cleaning mechanism. Fig. 5 is a partial cross-sectional front view showing a cleaning mechanism for cleaning the lower surface side of a workpiece.
2:加工裝置(研削裝置)2: Processing device (grinding device)
4:基台4: Abutment
4a,4b:開口4a, 4b: Opening
6:搬送機構(搬送單元)6: Conveying mechanism (conveying unit)
8a,8b:卡匣配置區域8a, 8b: Cassette configuration area
10a,10b:卡匣10a, 10b: Cassette
12:對位機構(對準機構)12: Alignment mechanism (alignment mechanism)
14:搬送機構(搬送單元、裝載臂)14: Conveying mechanism (conveying unit, loading arm)
16:旋轉台16: Rotary table
18:卡盤台(保持台)18: Chuck table (holding table)
18a:保持面18a: Keep Faces
20:支撐構造20: Support structure
22a,22b:移動機構(移動單元)22a, 22b: Moving mechanism (moving unit)
24:導軌24: Rails
26:移動板26: Mobile board
28:滾珠螺桿28: Ball screw
30:脈衝馬達30: Pulse motor
32:支撐器具32: Support equipment
34a,34b:加工單元(研削單元)34a, 34b: Machining unit (grinding unit)
36:外殼36: Shell
38:主軸38: Spindle
40:安裝件40: Mounting pieces
42a,42b:研削輪42a, 42b: Grinding wheels
44:搬送機構(搬送單元、卸載臂)44: Conveying mechanism (conveying unit, unloading arm)
46:清洗機構(清洗單元)46: Cleaning mechanism (cleaning unit)
48:清洗機構(清洗單元)48: Cleaning mechanism (cleaning unit)
50:乾燥噴嘴50: Drying Nozzle
52:輸入單元(輸入部)52: Input unit (input part)
54:控制單元(控制部)54: Control unit (control unit)
70:吸引墊70: Attraction Pad
A:搬送位置A: Delivery location
B:第一研削位置(粗研削位置)B: The first grinding position (rough grinding position)
C:第二研削位置(精研削位置)C: Second grinding position (finishing grinding position)
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2020141489A JP2022037381A (en) | 2020-08-25 | 2020-08-25 | Cleaning method of workpiece |
JP2020-141489 | 2020-08-25 |
Publications (1)
Publication Number | Publication Date |
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TW202208079A true TW202208079A (en) | 2022-03-01 |
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Application Number | Title | Priority Date | Filing Date |
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TW110130779A TW202208079A (en) | 2020-08-25 | 2021-08-20 | Workpiece cleaning method having a removing step for removing the cleaning liquid attached on the lower surface side of the workpiece |
Country Status (4)
Country | Link |
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JP (1) | JP2022037381A (en) |
KR (1) | KR20220026483A (en) |
CN (1) | CN114121600A (en) |
TW (1) | TW202208079A (en) |
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CN115302246A (en) * | 2022-09-06 | 2022-11-08 | 无锡市锡山区半导体先进制造创新中心 | Combined machining tool |
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JP5320014B2 (en) | 2008-10-17 | 2013-10-23 | 株式会社ディスコ | Grinding equipment |
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2021
- 2021-07-20 KR KR1020210094556A patent/KR20220026483A/en active Search and Examination
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JP2022037381A (en) | 2022-03-09 |
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