TWI801129B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI801129B
TWI801129B TW111104854A TW111104854A TWI801129B TW I801129 B TWI801129 B TW I801129B TW 111104854 A TW111104854 A TW 111104854A TW 111104854 A TW111104854 A TW 111104854A TW I801129 B TWI801129 B TW I801129B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW111104854A
Other languages
English (en)
Other versions
TW202249021A (zh
Inventor
櫻井克彰
小林修
黑沢智紀
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202249021A publication Critical patent/TW202249021A/zh
Application granted granted Critical
Publication of TWI801129B publication Critical patent/TWI801129B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Non-Volatile Memory (AREA)
TW111104854A 2021-06-02 2022-02-10 半導體記憶裝置 TWI801129B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021093006A JP2022185367A (ja) 2021-06-02 2021-06-02 半導体記憶装置
JP2021-093006 2021-06-02

Publications (2)

Publication Number Publication Date
TW202249021A TW202249021A (zh) 2022-12-16
TWI801129B true TWI801129B (zh) 2023-05-01

Family

ID=84241035

Family Applications (2)

Application Number Title Priority Date Filing Date
TW112113061A TW202329120A (zh) 2021-06-02 2022-02-10 半導體記憶裝置
TW111104854A TWI801129B (zh) 2021-06-02 2022-02-10 半導體記憶裝置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW112113061A TW202329120A (zh) 2021-06-02 2022-02-10 半導體記憶裝置

Country Status (4)

Country Link
US (1) US11869593B2 (zh)
JP (1) JP2022185367A (zh)
CN (1) CN115440272A (zh)
TW (2) TW202329120A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11887677B2 (en) * 2022-03-22 2024-01-30 Sandisk Technologies Llc Quick pass write programming techniques in a memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432732B2 (en) * 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
TW201530552A (zh) * 2014-01-29 2015-08-01 Macronix Int Co Ltd 漏電偵測方法及記憶體
TWI660363B (zh) * 2017-03-16 2019-05-21 東芝記憶體股份有限公司 Non-volatile semiconductor memory device
TWI722756B (zh) * 2019-08-20 2021-03-21 日商鎧俠股份有限公司 記憶裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167965A (ja) * 1995-12-15 1997-06-24 Kawasaki Steel Corp 基準電圧発生回路
DE69619972D1 (de) * 1996-06-18 2002-04-25 St Microelectronics Srl Nichtflüchtige Speicheranordnung mit niedriger Versorgungsspannung und Spannungserhöher
KR100587694B1 (ko) * 2005-02-16 2006-06-08 삼성전자주식회사 리키지 전류 보상 가능한 반도체 메모리 장치
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
JP2013201691A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 逐次比較型ａ／ｄ変換器
US9105357B2 (en) * 2013-09-09 2015-08-11 Kabushiki Kaisha Toshiba Semiconductor memory device and defective judging method thereof
US10008276B2 (en) 2016-04-27 2018-06-26 Sandisk Technologies Llc High accuracy leakage detection through low voltage biasing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432732B2 (en) * 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
TW201530552A (zh) * 2014-01-29 2015-08-01 Macronix Int Co Ltd 漏電偵測方法及記憶體
TWI660363B (zh) * 2017-03-16 2019-05-21 東芝記憶體股份有限公司 Non-volatile semiconductor memory device
TWI722756B (zh) * 2019-08-20 2021-03-21 日商鎧俠股份有限公司 記憶裝置

Also Published As

Publication number Publication date
TW202249021A (zh) 2022-12-16
US20220392531A1 (en) 2022-12-08
TW202329120A (zh) 2023-07-16
JP2022185367A (ja) 2022-12-14
CN115440272A (zh) 2022-12-06
US11869593B2 (en) 2024-01-09

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