SG11202102625VA - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
SG11202102625VA
SG11202102625VA SG11202102625VA SG11202102625VA SG11202102625VA SG 11202102625V A SG11202102625V A SG 11202102625VA SG 11202102625V A SG11202102625V A SG 11202102625VA SG 11202102625V A SG11202102625V A SG 11202102625VA SG 11202102625V A SG11202102625V A SG 11202102625VA
Authority
SG
Singapore
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
SG11202102625VA
Inventor
Akio Sugahara
Akihiro Imamoto
Toshifumi Watanabe
Mami Kakoi
Kohei Masuda
Masahiro Yoshihara
Naofumi Abiko
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Publication of SG11202102625VA publication Critical patent/SG11202102625VA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it
SG11202102625VA 2018-11-06 2018-11-06 Semiconductor memory device SG11202102625VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/041195 WO2020095361A1 (en) 2018-11-06 2018-11-06 Semiconductor storage device

Publications (1)

Publication Number Publication Date
SG11202102625VA true SG11202102625VA (en) 2021-04-29

Family

ID=70611763

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102625VA SG11202102625VA (en) 2018-11-06 2018-11-06 Semiconductor memory device

Country Status (6)

Country Link
US (3) US11532363B2 (en)
JP (1) JP7105911B2 (en)
CN (1) CN112655044B (en)
SG (1) SG11202102625VA (en)
TW (3) TWI786714B (en)
WO (1) WO2020095361A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112655044B (en) * 2018-11-06 2023-12-19 铠侠股份有限公司 Semiconductor memory device with a memory cell having a memory cell with a memory cell having a memory cell
KR20210106119A (en) * 2020-02-20 2021-08-30 에스케이하이닉스 주식회사 Memory system
JP2022128812A (en) * 2021-02-24 2022-09-05 キオクシア株式会社 semiconductor storage device
JP2023141561A (en) * 2022-03-24 2023-10-05 キオクシア株式会社 semiconductor storage device

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CN112655044B (en) * 2018-11-06 2023-12-19 铠侠股份有限公司 Semiconductor memory device with a memory cell having a memory cell with a memory cell having a memory cell
JP7195913B2 (en) 2018-12-19 2022-12-26 キオクシア株式会社 semiconductor storage device
JP7159036B2 (en) 2018-12-25 2022-10-24 キオクシア株式会社 memory device
JP2021174565A (en) 2020-04-24 2021-11-01 キオクシア株式会社 Semiconductor storage device

Also Published As

Publication number Publication date
US20210202007A1 (en) 2021-07-01
US20230420054A1 (en) 2023-12-28
JP7105911B2 (en) 2022-07-25
US20230052383A1 (en) 2023-02-16
CN112655044B (en) 2023-12-19
WO2020095361A1 (en) 2020-05-14
TWI817826B (en) 2023-10-01
TW202018720A (en) 2020-05-16
TWI735848B (en) 2021-08-11
US11532363B2 (en) 2022-12-20
TWI786714B (en) 2022-12-11
JPWO2020095361A1 (en) 2021-09-02
TW202329130A (en) 2023-07-16
CN112655044A (en) 2021-04-13
US11783899B2 (en) 2023-10-10
TW202207235A (en) 2022-02-16

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