TWI799905B - 半導體元件和半導體元件的製造方法 - Google Patents

半導體元件和半導體元件的製造方法 Download PDF

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Publication number
TWI799905B
TWI799905B TW110123655A TW110123655A TWI799905B TW I799905 B TWI799905 B TW I799905B TW 110123655 A TW110123655 A TW 110123655A TW 110123655 A TW110123655 A TW 110123655A TW I799905 B TWI799905 B TW I799905B
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Taiwan
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semiconductor element
manufacturing
manufacturing semiconductor
semiconductor
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TW110123655A
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TW202220244A (zh
Inventor
邱泰瑋
沈鼎瀛
錢鶴
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大陸商廈門半導體工業技術研發有限公司
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Publication of TW202220244A publication Critical patent/TW202220244A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW110123655A 2020-07-20 2021-06-28 半導體元件和半導體元件的製造方法 TWI799905B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010697207.4A CN112002801B (zh) 2020-07-20 2020-07-20 半导体器件和半导体器件的制造方法
CN202010697207.4 2020-07-20

Publications (2)

Publication Number Publication Date
TW202220244A TW202220244A (zh) 2022-05-16
TWI799905B true TWI799905B (zh) 2023-04-21

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TW110123655A TWI799905B (zh) 2020-07-20 2021-06-28 半導體元件和半導體元件的製造方法

Country Status (5)

Country Link
US (1) US20230225229A1 (zh)
KR (1) KR20230040949A (zh)
CN (1) CN112002801B (zh)
TW (1) TWI799905B (zh)
WO (1) WO2022017137A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112002801B (zh) * 2020-07-20 2021-09-07 厦门半导体工业技术研发有限公司 半导体器件和半导体器件的制造方法
CN112687793A (zh) * 2020-12-25 2021-04-20 厦门半导体工业技术研发有限公司 一种半导体器件及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610746A (zh) * 2011-01-20 2012-07-25 中国科学院微电子研究所 非挥发性电阻转变存储器
US20190123264A1 (en) * 2016-09-30 2019-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device

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US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
JP5227544B2 (ja) * 2007-07-12 2013-07-03 株式会社日立製作所 半導体装置
JP2009246085A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体装置およびその製造方法
CN102301425B (zh) * 2010-02-02 2013-10-30 松下电器产业株式会社 电阻变化元件的驱动方法、初始处理方法、以及非易失性存储装置
JP5648406B2 (ja) * 2010-10-13 2015-01-07 ソニー株式会社 不揮発性メモリ素子及び不揮発性メモリ素子群、並びに、これらの製造方法
US9680094B2 (en) * 2012-08-30 2017-06-13 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
US9431603B1 (en) * 2015-05-15 2016-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device
CN106299107A (zh) * 2015-05-25 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 低形成电压的阻变存储器及其制备方法
CN106374040B (zh) * 2016-08-26 2019-06-21 电子科技大学 一种多层阻变存储器单元及其制备方法
CN111029363B (zh) * 2019-12-24 2021-05-11 厦门半导体工业技术研发有限公司 一种电阻式存储器及其制备方法
CN111312895A (zh) * 2020-02-21 2020-06-19 上海华力微电子有限公司 阻变存储器及阻变存储器的制造方法
CN111403599B (zh) * 2020-02-26 2022-11-04 杭州未名信科科技有限公司 一种半导体结构及其制备方法
CN112002801B (zh) * 2020-07-20 2021-09-07 厦门半导体工业技术研发有限公司 半导体器件和半导体器件的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610746A (zh) * 2011-01-20 2012-07-25 中国科学院微电子研究所 非挥发性电阻转变存储器
US20190123264A1 (en) * 2016-09-30 2019-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device

Also Published As

Publication number Publication date
TW202220244A (zh) 2022-05-16
KR20230040949A (ko) 2023-03-23
US20230225229A1 (en) 2023-07-13
CN112002801B (zh) 2021-09-07
CN112002801A (zh) 2020-11-27
WO2022017137A1 (zh) 2022-01-27

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