TWI796188B - Light emitting diode component and light emitting diode circuit - Google Patents

Light emitting diode component and light emitting diode circuit Download PDF

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TWI796188B
TWI796188B TW111112306A TW111112306A TWI796188B TW I796188 B TWI796188 B TW I796188B TW 111112306 A TW111112306 A TW 111112306A TW 111112306 A TW111112306 A TW 111112306A TW I796188 B TWI796188 B TW I796188B
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diode
emitting diode
light
type doped
electrode pads
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TW111112306A
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TW202243283A (en
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李俊雨
吳仰恩
蘇松宇
王賢軍
王雅榕
謝嘉定
黃建富
林欣瑩
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友達光電股份有限公司
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Priority to CN202210392697.6A priority Critical patent/CN114937679A/en
Priority to JP2022067869A priority patent/JP7525538B2/en
Priority to KR1020220047517A priority patent/KR20220144772A/en
Priority to US17/723,856 priority patent/US20220336425A1/en
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Abstract

The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of P-type doping layers and a plurality of N-type doping layers. The P-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the N-type doping layer of a second P-N diode structure in the P-N diode structures.

Description

發光二極體元件以及發光二極體電路Light-emitting diode element and light-emitting diode circuit

本案是關於一種發光二極體元件以及發光二極體電路，特別是關於一種包含複數個P-N二極體結構的發光二極體元件以及發光二極體電路。This case relates to a light-emitting diode element and a light-emitting diode circuit, in particular to a light-emitting diode element and a light-emitting diode circuit including a plurality of P-N diode structures.

在市面上一般的主動矩陣式(active matrix)微發光二極體(micro light emitting diode，micro LED)顯示器中，通常以驅動電路或電晶體來驅動僅具有一個二極體結構的發光二極體元件，但如此驅動方式可能導致較高的功率消耗。此外，當發光二極體元件損壞而無法發光時，必須將整個元件替換，如此對顯示器設計者及消費者造成額外的成本。In general active matrix (active matrix) micro light emitting diode (micro LED) displays on the market, the light emitting diode with only one diode structure is usually driven by a driving circuit or a transistor. components, but such a driving method may result in higher power consumption. In addition, when the LED element is damaged and cannot emit light, the entire element must be replaced, which causes additional costs to display designers and consumers.

本案的一實施例提供一種發光二極體元件，包含基體以及複數個P-N二極體結構。P-N二極體結構彼此串聯耦接並橫向地相鄰配置而整合在基體上。P-N二極體結構包含複數個P型摻雜層以及複數個N型摻雜層。P型摻雜層在基體上相對於N型摻雜層配置。P-N二極體結構中第一P-N二極體結構的P型摻雜層電性耦接P-N二極體結構中相鄰第一P-N二極體結構之第二P-N二極體結構的N型摻雜層。An embodiment of the present application provides a light emitting diode element, which includes a base body and a plurality of P-N diode structures. The P-N diode structures are coupled in series with each other and arranged laterally adjacent to each other and integrated on the substrate. The P-N diode structure includes a plurality of P-type doped layers and a plurality of N-type doped layers. The P-type doped layer is disposed opposite to the N-type doped layer on the base. The P-type doped layer of the first P-N diode structure in the P-N diode structure is electrically coupled to the N-type doped layer of the second P-N diode structure adjacent to the first P-N diode structure in the P-N diode structure. Miscellaneous.

本案的另一實施例提供一種顯示裝置中之發光二極體電路，包含複數個電晶體以及發光二極體元件。電晶體的第一端彼此電性耦接且用以接收第一參考電壓。發光二極體元件電性耦接於電晶體與第二參考電壓之間，發光二極體元件包含複數個P-N二極體，P-N二極體彼此串聯耦接且整合於單一的晶片上。電晶體用以驅動發光二極體元件進行發光，電晶體中每一者的第二端電性耦接P-N二極體中對應一者的陽極。Another embodiment of the present application provides a light-emitting diode circuit in a display device, which includes a plurality of transistors and light-emitting diode elements. The first terminals of the transistors are electrically coupled to each other and used for receiving a first reference voltage. The light-emitting diode element is electrically coupled between the transistor and the second reference voltage. The light-emitting diode element includes a plurality of P-N diodes, and the P-N diodes are coupled in series and integrated on a single chip. The transistors are used to drive the light-emitting diode elements to emit light, and the second end of each of the transistors is electrically coupled to the anode of a corresponding one of the P-N diodes.

下列係舉實施例配合所附圖示做詳細說明，但所提供之實施例並非用以限制本揭露所涵蓋的範圍，而結構運作之描述非用以限制其執行順序，任何由元件重新組合之結構，所產生具有均等功效的裝置，皆為本揭露所涵蓋的範圍。另外，圖示僅以說明為目的，並未依照原尺寸作圖。為使便於理解，下述說明中相同元件或相似元件將以相同之符號標示來說明。The following is a detailed description of the embodiments in conjunction with the attached drawings, but the provided embodiments are not intended to limit the scope of this disclosure, and the description of the structure and operation is not intended to limit the execution sequence. Any recombination of components Structures and devices with equivalent functions are all within the scope of this disclosure. In addition, the illustrations are for illustration purposes only and are not drawn in original size. To facilitate understanding, the same elements or similar elements will be described with the same symbols in the following description.

於本文中，除非內文對於冠詞有特別限定，否則『一』與『該』可泛指單一個或多個。此外，本文使用之『包含』、『包括』、『具有』、以及相似詞彙，係用以指明所記載的特徵、區域、整數、步驟、操作、元件及/或組件。In this article, "a" and "the" can generally refer to one or more, unless the context specifically restricts the article. In addition, "comprising", "comprising", "having" and similar words used herein are used to designate the recited features, regions, integers, steps, operations, elements and/or components.

於本文中，當一元件被描述為係『連接』、『耦接』或『電性連接』至另一元件時，該元件可為直接連接、直接耦接或直接電性連接至該另一元件，亦可為該二元件之間有一額外元件存在，而該元件間接連接、間接耦接或間接電性連接至該另一元件。此外，雖然本文中使用『第一』、『第二』、…等用語描述不同元件，該用語僅是用以區別以相同技術用語描述的元件或操作。In this document, when an element is described as being "connected", "coupled" or "electrically connected" to another element, the element may be directly connected, directly coupled or directly electrically connected to the other element. An element may also be an additional element existing between the two elements, and the element is indirectly connected, indirectly coupled, or indirectly electrically connected to the other element. In addition, although terms such as "first", "second", ..., etc. are used herein to describe different elements, these terms are only used to distinguish elements or operations described with the same technical terms.

在市面上一般的主動矩陣式(active matrix)微發光二極體(micro light emitting diode，micro LED)顯示器中，通常以驅動電路或電晶體來驅動僅具有一個二極體結構的發光二極體元件，但如此驅動方式可能導致較高的功率消耗。本揭示的一實施例提出一種發光二極體元件整合多個P-N二極體結構。請參照第1圖。第1圖為根據本揭示一些實施例之顯示裝置中之發光二極體電路的示意圖。第1圖所示的發光二極體電路使用電晶體t1來驅動發光二極體元件120，電晶體t1接收參考電壓VDD且電性耦接發光二極體元件120，發光二極體元件120電性耦接參考電壓VSS。發光二極體元件120包含兩個P-N二極體結構d1、d2，兩個P-N二極體結構d1、d2彼此串聯耦接，且P-N二極體結構d1、d2整合為同一個發光二極體元件120。In general active matrix (active matrix) micro light emitting diode (micro LED) displays on the market, the light emitting diode with only one diode structure is usually driven by a driving circuit or a transistor. components, but such a driving method may result in higher power consumption. An embodiment of the present disclosure proposes a light emitting diode device integrating a plurality of P-N diode structures. Please refer to Figure 1. FIG. 1 is a schematic diagram of a light emitting diode circuit in a display device according to some embodiments of the present disclosure. The light-emitting diode circuit shown in FIG. 1 uses transistor t1 to drive the light-emitting diode element 120. The transistor t1 receives the reference voltage VDD and is electrically coupled to the light-emitting diode element 120. The light-emitting diode element 120 is electrically connected. Sexually coupled to the reference voltage VSS. The light emitting diode element 120 includes two P-N diode structures d1, d2, the two P-N diode structures d1, d2 are coupled in series with each other, and the P-N diode structures d1, d2 are integrated into the same light emitting diode Element 120.

在操作上，電晶體t1的第一端接收參考電壓VDD，而當電晶體t1的閘極端接收閘極驅動訊號而被導通時，電晶體t1傳送參考電壓VDD至發光二極體元件120。當發光二極體元件120兩端的電壓差大於P-N二極體結構d1、d2兩者所需的順向偏壓時，P-N二極體結構d1、d2被導通且電流i1流經P-N二極體結構d1、d2。In operation, the first terminal of the transistor t1 receives the reference voltage VDD, and when the gate terminal of the transistor t1 receives the gate driving signal and is turned on, the transistor t1 transmits the reference voltage VDD to the LED device 120 . When the voltage difference across the light-emitting diode element 120 is greater than the forward bias required by both the P-N diode structures d1, d2, the P-N diode structures d1, d2 are turned on and the current i1 flows through the P-N diodes Structure d1, d2.

在一些實施例中，P-N二極體結構d1、d2具有相同的結構、物理性質及/或順向偏壓。在其他實施例中，P-N二極體結構d1、d2具有不同的結構、物理性質及/或順向偏壓。In some embodiments, the P-N diode structures d1 and d2 have the same structure, physical properties and/or forward bias. In other embodiments, the P-N diode structures d1 and d2 have different structures, physical properties and/or forward bias voltages.

與先前所述使用電晶體來驅動僅具有一個二極體結構的發光二極體元件相比，由於第1圖實施例中的發光二極體元件120包含兩個P-N二極體結構d1、d2，第1圖的發光二極體電路可以使用較小的電流而仍能達到相同的亮度。由於電流i1較小，第1圖所示的發光二極體電路將具有較小的功率消耗。Compared with the previously described use of transistors to drive the light-emitting diode element with only one diode structure, since the light-emitting diode element 120 in the embodiment of FIG. 1 includes two P-N diode structures d1, d2 , the light-emitting diode circuit in Figure 1 can use a smaller current and still achieve the same brightness. Due to the small current i1, the LED circuit shown in Figure 1 will have a small power consumption.

請參照第2圖。第2圖為根據本揭示一些實施例之發光二極體元件220的結構示意圖。在一些實施例中，第1圖中的發光二極體元件120可具有與第2圖的發光二極體元件220類似的結構。發光二極體元件220中包含P-N二極體結構d1、d2，對應第1圖中的P-N二極體結構d1、d2。Please refer to Figure 2. FIG. 2 is a schematic structural diagram of a light emitting diode device 220 according to some embodiments of the present disclosure. In some embodiments, the LED element 120 in FIG. 1 may have a similar structure to the LED element 220 in FIG. 2 . The light emitting diode element 220 includes P-N diode structures d1, d2, corresponding to the P-N diode structures d1, d2 in FIG. 1 .

第2圖實施例中P-N二極體結構d1、d2的每一者為典型P-N二極體之結構，舉例來說，P-N二極體結構d1包含基體221、具有P型摻雜物的P型摻雜層222、具有多重量子井(multiple quantum well，MQW)結構的主動層、具有N型摻雜物的N型摻雜層223以及電極P；類似地，P-N二極體結構d2包含基體221、P型摻雜層224、主動層、N型摻雜層225以及電極N。P-N二極體結構d1、d2共同整合在基體221上。在一些實施例中，P-N二極體結構d1與P-N二極體結構d2之間透過具有導電性質的互連結構226電性耦接，例如如第2圖所示P-N二極體結構d1的N型摻雜層223透過互連結構226電性耦接至P-N二極體結構d2的P型摻雜層224，使得P-N二極體結構d1、d2串聯耦接，而可用於如第1圖所示的發光二極體電路中。Each of the P-N diode structures d1 and d2 in the embodiment of Fig. 2 is a typical P-N diode structure. A doped layer 222, an active layer having a multiple quantum well (multiple quantum well, MQW) structure, an N-type doped layer 223 having an N-type dopant, and an electrode P; similarly, the P-N diode structure d2 includes a substrate 221 , a P-type doped layer 224 , an active layer, an N-type doped layer 225 and an electrode N. The P-N diode structures d1 and d2 are jointly integrated on the base 221 . In some embodiments, the P-N diode structure d1 and the P-N diode structure d2 are electrically coupled through an interconnection structure 226 having a conductive property, for example, the N of the P-N diode structure d1 shown in FIG. The P-type doped layer 223 is electrically coupled to the P-type doped layer 224 of the P-N diode structure d2 through the interconnection structure 226, so that the P-N diode structures d1 and d2 are connected in series, and can be used as shown in FIG. 1 in the light emitting diode circuit shown.

在第1圖的發光二極體元件120及第2圖的發光二極體元件220中，僅有兩個P-N二極體結構d1、d2串聯耦接，本揭示的一實施例另提出一種包含更多個串聯耦接的P-N二極體結構之發光二極體元件。請參照第3A圖。第3A圖為根據本揭示一些實施例之發光二極體元件320的示意圖。發光二極體元件320包含P-N二極體結構D1~Dn，P-N二極體結構D1~Dn彼此串聯耦接並橫向地相鄰配置而整合為同一個結構。舉例來說，如第3A圖所示，P-N二極體結構D1~Dn中的每一者在水平方向（如：X方向）上延伸，P-N二極體結構D1~Dn在與水平方向相切的另一方向（如：Y方向）上橫向地依序配置。In the light-emitting diode element 120 in FIG. 1 and the light-emitting diode element 220 in FIG. 2, only two P-N diode structures d1 and d2 are coupled in series. An embodiment of the present disclosure proposes another method comprising More light-emitting diode elements of a P-N diode structure coupled in series. Please refer to Figure 3A. FIG. 3A is a schematic diagram of an LED device 320 according to some embodiments of the present disclosure. The light emitting diode element 320 includes P-N diode structures D1-Dn, and the P-N diode structures D1-Dn are coupled in series with each other and arranged laterally adjacent to be integrated into a same structure. For example, as shown in FIG. 3A, each of the P-N diode structures D1~Dn extends in the horizontal direction (such as: X direction), and the P-N diode structures D1~Dn are tangent to the horizontal direction. The other direction (such as: Y direction) is arranged laterally and sequentially.

在一些實施例中，P-N二極體結構D1~Dn各自電性耦接對應的電極墊。詳細來說，P-N二極體結構D1電性耦接電極墊P1、N1，電極墊N1配置於P-N二極體結構D1底部相對右側的位置，電極墊P1配置於P-N二極體結構D1底部相對左側的位置(為求圖式簡潔，電極墊P1未繪示於圖中)。類似地，P-N二極體結構D2~Dn電性耦接對應的電極墊P2~Pn以及電極墊N2~Nn。In some embodiments, each of the P-N diode structures D1˜Dn is electrically coupled to a corresponding electrode pad. In detail, the P-N diode structure D1 is electrically coupled to the electrode pads P1 and N1, the electrode pad N1 is disposed on the opposite right side of the bottom of the P-N diode structure D1, and the electrode pad P1 is disposed opposite to the bottom of the P-N diode structure D1. The position on the left side (for simplicity of the drawing, the electrode pad P1 is not shown in the figure). Similarly, the P-N diode structures D2-Dn are electrically coupled to the corresponding electrode pads P2-Pn and electrode pads N2-Nn.

在一些實施例中，電極墊P1~Pn是作為P-N二極體結構D1~Dn的陽極，電極墊N1~Nn是作為P-N二極體結構D1~Dn的陰極，陽極用以接收相對高的電壓，陰極用以接收相對低的電壓。In some embodiments, electrode pads P1~Pn are used as anodes of P-N diode structures D1~Dn, electrode pads N1~Nn are used as cathodes of P-N diode structures D1~Dn, and the anodes are used to receive relatively high voltages , the cathode is used to receive a relatively low voltage.

在一些實施例中，P-N二極體結構D1的電極墊N1透過互連結構電性耦接P-N二極體結構D2的電極墊P2(為求圖式簡潔而未繪示於圖中)，P-N二極體結構D2的電極墊N2透過互連結構電性耦接P-N二極體結構D3的電極墊P3(為求圖式簡潔而未繪示於圖中)，P-N二極體結構D3的電極墊N3透過互連結構電性耦接P-N二極體結構D4的電極墊P4(為求圖式簡潔而未繪示於圖中)，依此類推，直至P-N二極體結構D(n-1)的電極墊N(-1) 透過互連結構電性耦接P-N二極體結構Dn的電極墊Pn。基於以上連接關係，P-N二極體結構D1~Dn彼此串聯耦接，如此之串連耦接關係可參考第6圖及以下之相關說明。In some embodiments, the electrode pad N1 of the P-N diode structure D1 is electrically coupled to the electrode pad P2 of the P-N diode structure D2 through the interconnection structure (not shown in the figure for simplicity of the drawing), P-N The electrode pad N2 of the diode structure D2 is electrically coupled to the electrode pad P3 of the P-N diode structure D3 through the interconnection structure (not shown in the figure for simplicity of the drawing), and the electrode of the P-N diode structure D3 The pad N3 is electrically coupled to the electrode pad P4 of the P-N diode structure D4 through the interconnection structure (not shown in the figure for simplicity of the drawing), and so on until the P-N diode structure D(n-1 The electrode pad N(-1) of ) is electrically coupled to the electrode pad Pn of the P-N diode structure Dn through the interconnection structure. Based on the above connection relationship, the P-N diode structures D1˜Dn are coupled in series with each other. For such a series coupling relationship, please refer to FIG. 6 and related descriptions below.

在一些實施例中，電極墊之間的距離約為3~300微米。例如，在第3A圖中P-N二極體結構D(n-1)的電極墊N(n-1)與P-N二極體結構Dn的電極墊Nn之間的距離DIS約為3~300微米。In some embodiments, the distance between the electrode pads is about 3-300 microns. For example, in FIG. 3A, the distance DIS between the electrode pad N(n-1) of the P-N diode structure D(n-1) and the electrode pad Nn of the P-N diode structure Dn is about 3-300 micrometers.

在一些實施例中，P-N二極體結構D1~Dn是整合在同一個基體上。請參照第3B圖。第3B圖為根據本揭示一些實施例之第3A圖中發光二極體元件320的截面圖。如第3B圖所示，第3A圖中的P-N二極體結構D1~Dn包含P型摻雜層324、主動層326以及N型摻雜層328，此三者彼此相對配置而作為一個P-N二極體結構。換言之，P-N二極體結構D1~Dn中的每一者皆包含P型摻雜層324、主動層326以及N型摻雜層328，且P-N二極體結構D1~Dn的P型摻雜層324、主動層326以及N型摻雜層328共同整合在基體322上。In some embodiments, the P-N diode structures D1˜Dn are integrated on the same substrate. Please refer to Figure 3B. FIG. 3B is a cross-sectional view of the LED element 320 of FIG. 3A according to some embodiments of the present disclosure. As shown in FIG. 3B, the P-N diode structures D1~Dn in FIG. 3A include a P-type doped layer 324, an active layer 326, and an N-type doped layer 328, which are arranged opposite to each other as a P-N diode. Polar structure. In other words, each of the P-N diode structures D1˜Dn includes a P-type doped layer 324, an active layer 326, and an N-type doped layer 328, and the P-type doped layer of the P-N diode structures D1˜Dn 324 , the active layer 326 and the N-type doped layer 328 are integrated on the base body 322 .

在第3B圖的實施例中，P型摻雜層324配置於N型摻雜層328與基體322之間。在一些實施例中，P-N二極體結構D1~Dn中任兩相鄰P-N二極體結構之其中一者的P型摻雜層透過互連結構（如第6圖中的互連結構CON，將於以下段落中說明）電性耦接另一者的N型摻雜層。In the embodiment shown in FIG. 3B , the P-type doped layer 324 is disposed between the N-type doped layer 328 and the base 322 . In some embodiments, the P-type doped layer of any two adjacent P-N diode structures in the P-N diode structures D1~Dn passes through the interconnection structure (such as the interconnection structure CON in Figure 6, will be described in the following paragraphs) are electrically coupled to the other N-type doped layer.

在一些實施例中，第3A圖中的電極墊P1~Pn以及電極墊N1~Nn是以第3B圖中的結構電性耦接P-N二極體結構D1~Dn。詳細來說，如第3B圖所示，電極墊Pn電性耦接P-N二極體結構Dn的P型摻雜層324，電極墊Nn電性耦接P-N二極體結構Dn的N型摻雜層328。在一些實施例中，電極墊P1~P(n-1)以類似的方式電性耦接至對應的P-N二極體結構D1~D(N-1)的P型摻雜層324，電極墊N1~N(n-1)以類似的方式電性耦接至對應的P-N二極體結構D1~D(N-1)的N型摻雜層328。In some embodiments, the electrode pads P1 ˜ Pn and the electrode pads N1 ˜ Nn in FIG. 3A are electrically coupled to the P-N diode structures D1 ˜ Dn in the structure shown in FIG. 3B . In detail, as shown in FIG. 3B, the electrode pad Pn is electrically coupled to the P-type doped layer 324 of the P-N diode structure Dn, and the electrode pad Nn is electrically coupled to the N-type doped layer of the P-N diode structure Dn. Layer 328. In some embodiments, the electrode pads P1~P(n-1) are electrically coupled to the P-type doped layer 324 of the corresponding P-N diode structure D1~D(N-1) in a similar manner, and the electrode pads N1˜N(n−1) are electrically coupled to the N-type doped layer 328 of the corresponding P-N diode structure D1˜D(N−1) in a similar manner.

在一些實施例中，在操作上，當電極墊Pn接收相對高的電壓而電極墊Nn接收相對低的電壓時，將形成電流從電極墊Pn傳送至P型摻雜層324，再從P型摻雜層324流經主動層326再流向N型摻雜層328，最後傳送至電極墊Nn。當電流流經主動層326時，P-N二極體結構Dn即會發光。In some embodiments, in operation, when the electrode pad Pn receives a relatively high voltage and the electrode pad Nn receives a relatively low voltage, the forming current is transmitted from the electrode pad Pn to the P-type doped layer 324, and then from the P-type doped layer 324. The doped layer 324 flows through the active layer 326 and then flows to the N-type doped layer 328 , and finally transmits to the electrode pad Nn. When the current flows through the active layer 326, the P-N diode structure Dn will emit light.

在一些實施例中，電極墊P1~Pn以及電極墊N1~Nn皆外露而作為獨立的電極。因此，當發光二極體元件320使用於一電路中時，電極墊P1~Pn以及電極墊N1~Nn可以作為獨立的電極而用以電性耦接至不同的引腳或電路或電子元件，或用以接收不同的訊號。In some embodiments, the electrode pads P1 -Pn and the electrode pads N1 -Nn are exposed as independent electrodes. Therefore, when the light emitting diode element 320 is used in a circuit, the electrode pads P1-Pn and the electrode pads N1-Nn can be used as independent electrodes for electrically coupling to different pins or circuits or electronic components, Or to receive different signals.

應注意的是，第3A圖及第3B圖所提出之實施例僅為例示性質，在一些實施例中，包含複數個串聯耦接P-N二極體結構的發光二極體元件可以具有如第4A圖及第4B圖所示的結構。請參照第4A圖及第4B圖。第4A圖為根據本揭示一些實施例之發光二極體元件420的示意圖。第4B圖為根據本揭示一些實施例之第4A圖中發光二極體元件420的截面圖。在第4A圖中，發光二極體元件420同樣包含串聯耦接的P-N二極體結構D1~Dn，但與第3A圖實施例不同的是，電極墊N1~Nn配置於P-N二極體結構D1~Dn底部的相對左側，電極墊P1~Pn配置於P-N二極體結構D1~Dn底部的相對右側。It should be noted that the embodiments shown in FIG. 3A and FIG. 3B are only illustrative. In some embodiments, the light emitting diode device comprising a plurality of series-coupled P-N diode structures may have the structure shown in FIG. 4A Figure and the structure shown in Figure 4B. Please refer to Figure 4A and Figure 4B. FIG. 4A is a schematic diagram of an LED device 420 according to some embodiments of the present disclosure. FIG. 4B is a cross-sectional view of the LED element 420 of FIG. 4A according to some embodiments of the present disclosure. In FIG. 4A, the light-emitting diode element 420 also includes P-N diode structures D1~Dn coupled in series, but different from the embodiment in FIG. 3A, the electrode pads N1~Nn are arranged in the P-N diode structure On the relative left side of the bottom of D1-Dn, the electrode pads P1-Pn are arranged on the relative right side of the bottom of the P-N diode structure D1-Dn.

在第4A圖的實施例中，P-N二極體結構D1的電極墊N1(為求圖式簡潔而未繪示於圖中)透過互連結構電性耦接P-N二極體結構D2的電極墊P2，P-N二極體結構D2的電極墊N2(為求圖式簡潔而未繪示於圖中)透過互連結構電性耦接P-N二極體結構D3的電極墊P3，P-N二極體結構D3的電極墊N3(為求圖式簡潔而未繪示於圖中)透過互連結構電性耦接P-N二極體結構D4的電極墊P4，依此類推，直至P-N二極體結構D(n-1)的電極墊N(-1) (為求圖式簡潔而未繪示於圖中)透過互連結構電性耦接P-N二極體結構Dn的電極墊Pn。基於以上連接關係，P-N二極體結構D1~Dn彼此串聯耦接。In the embodiment shown in FIG. 4A, the electrode pad N1 of the P-N diode structure D1 (not shown in the figure for simplicity of the drawing) is electrically coupled to the electrode pad of the P-N diode structure D2 through the interconnection structure. P2, the electrode pad N2 of the P-N diode structure D2 (not shown in the figure for the sake of simplicity) is electrically coupled to the electrode pad P3 of the P-N diode structure D3 through the interconnection structure, the P-N diode structure The electrode pad N3 of D3 (not shown in the figure for simplicity) is electrically coupled to the electrode pad P4 of the P-N diode structure D4 through the interconnection structure, and so on until the P-N diode structure D ( The electrode pad N(-1) of n-1) (not shown in the figure for simplicity) is electrically coupled to the electrode pad Pn of the P-N diode structure Dn through the interconnection structure. Based on the above connection relationship, the P-N diode structures D1˜Dn are coupled in series with each other.

在一實施例中，第4A圖的發光二極體元件420具有如第4B圖所示的結構。P-N二極體結構D1~Dn皆具有N型摻雜層424、主動層426以及P型摻雜層428，且P-N二極體結構D1~Dn共同整合於同一基體422上。如第4B圖所示，P-N二極體結構Dn的電極墊Pn電性耦接P型摻雜層428，P-N二極體結構Dn的電極墊Nn電性耦接N型摻雜層424，其他P-N二極體結構D1~D(n-1)的電極墊P1~P(n-1)以及電極墊N1~N(n-1)亦以類似的連接關係電性耦接至P型摻雜層428及N型摻雜層424。在操作上，當電極墊P1~Pn接收相對高的電壓而電極墊N1~Nn接收相對低的電壓時，電流將自電極墊P1~Pn依序流經P型摻雜層428、主動層426以及N型摻雜層424，最後傳送至電極墊N1~Nn。In one embodiment, the LED device 420 in FIG. 4A has the structure shown in FIG. 4B. The P-N diode structures D1-Dn all have an N-type doped layer 424 , an active layer 426 and a P-type doped layer 428 , and the P-N diode structures D1-Dn are integrated on the same substrate 422 . As shown in FIG. 4B, the electrode pad Pn of the P-N diode structure Dn is electrically coupled to the P-type doped layer 428, the electrode pad Nn of the P-N diode structure Dn is electrically coupled to the N-type doped layer 424, and others The electrode pads P1~P(n-1) and the electrode pads N1~N(n-1) of the P-N diode structure D1~D(n-1) are also electrically coupled to the P-type doped layer 428 and N-type doped layer 424 . In operation, when the electrode pads P1~Pn receive a relatively high voltage and the electrode pads N1~Nn receive a relatively low voltage, the current will flow from the electrode pads P1~Pn through the P-type doped layer 428 and the active layer 426 in sequence. And the N-type doped layer 424 is finally sent to the electrode pads N1˜Nn.

如前所述，第3A圖至第4B圖實施例的發光二極體元件皆包含彼此串聯耦接的複數個P-N二極體結構。本案另揭示一種顯示裝置中的發光二極體電路包含如此之發光二極體元件。請參照第5圖。第5圖為根據本揭示一些實施例之顯示裝置中之發光二極體電路500的示意圖。發光二極體電路500包含電晶體T1~Tn以及發光二極體元件520。電晶體T1~Tn的第一端彼此電性耦接且用以接收參考電壓VDD，電晶體T1~Tn的第二端用以驅動發光二極體元件520以進行發光。發光二極體元件520電性耦接於電晶體T1~Tn與參考電壓VSS之間。As mentioned above, the light-emitting diode elements in the embodiments shown in FIGS. 3A to 4B all include a plurality of P-N diode structures coupled in series. This case also discloses a light-emitting diode circuit in a display device including such a light-emitting diode element. Please refer to Figure 5. FIG. 5 is a schematic diagram of a light emitting diode circuit 500 in a display device according to some embodiments of the present disclosure. The light emitting diode circuit 500 includes transistors T1 ˜Tn and a light emitting diode element 520 . The first ends of the transistors T1 ˜ Tn are electrically coupled to each other and used to receive the reference voltage VDD, and the second ends of the transistors T1 ˜ Tn are used to drive the light emitting diode element 520 to emit light. The light emitting diode element 520 is electrically coupled between the transistors T1 ˜Tn and the reference voltage VSS.

發光二極體元件520包含複數個P-N二極體D1~Dn， P-N二極體D1~Dn彼此串聯耦接且整合於單一的晶片上。換言之，在發光二極體電路500中，發光二極體元件520是單一個晶片，且發光二極體電路500透過電晶體T1~Tn來驅動此晶片進行發光。The light emitting diode element 520 includes a plurality of P-N diodes D1-Dn, and the P-N diodes D1-Dn are coupled in series and integrated on a single chip. In other words, in the light emitting diode circuit 500 , the light emitting diode element 520 is a single chip, and the light emitting diode circuit 500 drives the chip to emit light through the transistors T1 -Tn.

在一些實施例中，如第5圖所示，發光二極體元件520包含電極墊P1~Pn以及電極墊N1~Nn，電極墊P1~Pn以及電極墊N1~Nn中的每一者電性耦接於對應的P-N二極體D1~Dn與電晶體T1~Tn之間。詳細來說，電極墊P1電性耦接於P-N二極體D1的陽極與電晶體T1之間，電極墊N1電性耦接於P-N二極體D1的陰極與電晶體T2之間，電極墊P2電性耦接於P-N二極體D2的陽極與電晶體T2之間，電極墊N2電性耦接於P-N二極體D2的陰極與電晶體T3之間，依此類推，最後電極墊Pn電性耦接於P-N二極體Dn的陽極與電晶體Tn之間，電極墊Nn電性耦接於P-N二極體Dn的陰極與參考電壓VSS之間。In some embodiments, as shown in FIG. 5, the light emitting diode element 520 includes electrode pads P1~Pn and electrode pads N1~Nn, each of the electrode pads P1~Pn and electrode pads N1~Nn is electrically It is coupled between the corresponding P-N diodes D1~Dn and transistors T1~Tn. In detail, the electrode pad P1 is electrically coupled between the anode of the P-N diode D1 and the transistor T1, the electrode pad N1 is electrically coupled between the cathode of the P-N diode D1 and the transistor T2, and the electrode pad P2 is electrically coupled between the anode of P-N diode D2 and transistor T2, electrode pad N2 is electrically coupled between the cathode of P-N diode D2 and transistor T3, and so on, and finally electrode pad Pn The electrode pad Nn is electrically coupled between the anode of the P-N diode Dn and the transistor Tn, and the electrode pad Nn is electrically coupled between the cathode of the P-N diode Dn and the reference voltage VSS.

在一些實施例中，發光二極體元件520的電極墊P1~Pn以及電極墊N1~Nn外露而作為獨立的電極，因此電晶體T1~Tn可透過走線電性耦接至電極墊P1~Pn以及電極墊N1~Nn。In some embodiments, the electrode pads P1-Pn and the electrode pads N1-Nn of the light-emitting diode device 520 are exposed as independent electrodes, so the transistors T1-Tn can be electrically coupled to the electrode pads P1-N through wires. Pn and electrode pads N1~Nn.

在一些實施例中，發光二極體元件520具有如第3A圖實施例的結構，發光二極體電路500可使用電晶體T1~Tn來驅動如第3A圖所示的發光二極體元件320。請參照第6圖。第6圖為根據本揭示一些實施例之第5圖中發光二極體電路500的局部示意圖。第6圖的發光二極體元件620對應第5圖的發光二極體元件520，且其具有與第3A圖發光二極體元件320相似的結構。在第6圖中，P-N二極體結構D1~Dn整合為發光二極體元件620，且P-N二極體結構D1~Dn中的每一者電性耦接對應的電極墊，例如P-N二極體結構D1電性耦接電極墊P1及N1。In some embodiments, the light-emitting diode element 520 has a structure as in the embodiment of FIG. 3A, and the light-emitting diode circuit 500 can use transistors T1~Tn to drive the light-emitting diode element 320 as shown in FIG. 3A. . Please refer to Figure 6. FIG. 6 is a partial schematic diagram of the LED circuit 500 in FIG. 5 according to some embodiments of the present disclosure. The LED device 620 in FIG. 6 corresponds to the LED device 520 in FIG. 5 and has a structure similar to that of the LED device 320 in FIG. 3A. In FIG. 6, the P-N diode structures D1~Dn are integrated into a light-emitting diode element 620, and each of the P-N diode structures D1~Dn is electrically coupled to a corresponding electrode pad, such as a P-N diode The body structure D1 is electrically coupled to the electrode pads P1 and N1.

在一些實施例中，P-N二極體結構D1的電極墊N1透過互連結構CON電性耦接P-N二極體結構D2的電極墊P2，使得P-N二極體結構D1、D2串連耦接。類似地，P-N二極體結構D2~Dn的電極墊透過互連結構CON電性耦接，使得P-N二極體結構D2~Dn亦串連耦接。In some embodiments, the electrode pad N1 of the P-N diode structure D1 is electrically coupled to the electrode pad P2 of the P-N diode structure D2 through the interconnection structure CON, so that the P-N diode structures D1 and D2 are coupled in series. Similarly, the electrode pads of the P-N diode structures D2-Dn are electrically coupled through the interconnection structure CON, so that the P-N diode structures D2-Dn are also coupled in series.

在一些實施例中，P-N二極體結構D1~Dn中任兩相鄰P-N二極體結構之其中一者的N型摻雜層透過互連結構CON電性耦接另一者的P型摻雜層。舉例來說，P-N二極體結構D1的N型摻雜層透過互連結構CON電性耦接P-N二極體結構D2的P型摻雜層。In some embodiments, the N-type doped layer of any two adjacent P-N diode structures D1~Dn is electrically coupled to the P-type doped layer of the other through the interconnection structure CON. Miscellaneous. For example, the N-type doped layer of the P-N diode structure D1 is electrically coupled to the P-type doped layer of the P-N diode structure D2 through the interconnection structure CON.

請參照第7A圖。第7A圖為根據本揭示一些實施例之第5圖發光二極體電路500操作於發光期間的示意圖。在第7A圖的實施例中，電晶體T1的閘極端接收一閘極驅動訊號，電晶體T1因而導通，電晶體T1將參考電壓VDD傳送至P-N二極體結構D1。由於P-N二極體結構D1~Dn彼此串連耦接，電流I1將依序流經電晶體T1、P-N二極體結構D1、P-N二極體結構D2…最後流經P-N二極體結構Dn，所有的P-N二極體結構D1~Dn因此將發光。換言之，在第7A圖的實施例中，僅需導通電晶體T1，即可讓發光二極體元件520中的所有P-N二極體結構D1~Dn進行發光。Please refer to Figure 7A. FIG. 7A is a schematic diagram of the light emitting diode circuit 500 of FIG. 5 operating during a light emitting period according to some embodiments of the present disclosure. In the embodiment shown in FIG. 7A, the gate terminal of the transistor T1 receives a gate driving signal, the transistor T1 is turned on, and the transistor T1 transmits the reference voltage VDD to the P-N diode structure D1. Since the P-N diode structures D1~Dn are coupled in series with each other, the current I1 will flow through the transistor T1, the P-N diode structure D1, the P-N diode structure D2... and finally flow through the P-N diode structure Dn, All P-N diode structures D1~Dn will thus emit light. In other words, in the embodiment shown in FIG. 7A, all the P-N diode structures D1˜Dn in the light emitting diode element 520 can emit light only by turning on the transistor T1.

在一些實施例中，電晶體T1閘極端接收的閘極驅動訊號係由一閘極驅動電路所提供。在一些實施例中，發光二極體電路500進一步包含一閘極驅動電路電性耦接電晶體T1~Tn的閘極端，且閘極驅動電路用以對電晶體T1~Tn的閘極端提供閘極驅動訊號，以開啟電晶體T1~Tn中的一或多者。In some embodiments, the gate driving signal received by the gate terminal of the transistor T1 is provided by a gate driving circuit. In some embodiments, the LED circuit 500 further includes a gate driving circuit electrically coupled to the gate terminals of the transistors T1-Tn, and the gate driving circuit is used to provide gates for the gate terminals of the transistors T1-Tn. Pole driving signals to turn on one or more of the transistors T1˜Tn.

另一方面，假如第5圖實施例中發光二極體元件520中的P-N二極體結構D1~Dn其中一者損壞時，發光二極體電路500可以選擇開啟特定的電晶體來導通未損壞的P-N二極體結構，如此一來即不須替換整個發光二極體元件520。請參照第7B圖。第7B圖為根據本揭示一些實施例之第5圖發光二極體電路500操作於發光期間的示意圖。假設在第7B圖的實施例中P-N二極體結構D1損壞，則改為對電晶體T2的閘極端提供閘極驅動訊號，此時電晶體T2將參考電壓VDD傳送至P-N二極體結構D2，且基於P-N二極體結構D2至P-N二極體結構Dn間的串連耦接，P-N二極體結構D2~Dn將發光。換言之，當P-N二極體中的P-N二極體結構Dm(即第m個P-N二極體結構，m為大於等於1的整數)損壞時，對電晶體T(m+1)的閘極端提供閘極驅動訊號，電晶體T(m+1)傳送參考電壓VDD至P-N二極體結構D(m+1)，即可使P-N二極體結構D(m+1)至P-N二極體結構Dn發光。再換言之，發光二極體電路500可以避開損壞的P-N二極體結構，而驅動未損壞的P-N二極體結構進行發光。On the other hand, if one of the P-N diode structures D1~Dn in the light emitting diode element 520 in the embodiment of FIG. P-N diode structure, so that the entire light emitting diode element 520 does not need to be replaced. Please refer to Figure 7B. FIG. 7B is a schematic diagram of the light-emitting diode circuit 500 of FIG. 5 operating during a light-emitting period according to some embodiments of the present disclosure. Assuming that the P-N diode structure D1 is damaged in the embodiment shown in Figure 7B, the gate drive signal is provided to the gate terminal of the transistor T2 instead, and the transistor T2 transmits the reference voltage VDD to the P-N diode structure D2 at this time. , and based on the series coupling between the P-N diode structure D2 to the P-N diode structure Dn, the P-N diode structures D2˜Dn will emit light. In other words, when the P-N diode structure Dm in the P-N diode (that is, the mth P-N diode structure, m is an integer greater than or equal to 1) is damaged, the gate terminal of the transistor T(m+1) is provided Gate drive signal, the transistor T(m+1) transmits the reference voltage VDD to the P-N diode structure D(m+1), which can make the P-N diode structure D(m+1) to the P-N diode structure Dn shines. In other words, the light emitting diode circuit 500 can avoid the damaged P-N diode structure, and drive the undamaged P-N diode structure to emit light.

在一些實施例中，發光二極體電路500進一步包含一偵測電路，用以偵測是否有電流流經發光二極體元件520而使發光二極體元件520發光。透過如此之偵測電路將可確認發光二極體元件520中特定的P-N二極體結構是否有損壞。舉例來說，當電晶體T1的閘極端接收閘極驅動訊號，但偵測電路未偵測到有電路流經發光二極體元件520時，代表電晶體T1所電性耦接的P-N二極體結構D1有損壞。In some embodiments, the LED circuit 500 further includes a detection circuit for detecting whether a current flows through the LED device 520 to make the LED device 520 emit light. Through such a detection circuit, it can be confirmed whether the specific P-N diode structure in the LED element 520 is damaged. For example, when the gate terminal of the transistor T1 receives the gate driving signal, but the detection circuit does not detect that there is a circuit flowing through the light-emitting diode element 520, it means that the P-N diode electrically coupled to the transistor T1 Body structure D1 is damaged.

在一些實施例中，依序導通發光二極體電路500中的電晶體T1~T，直到的P-N二極體結構D1~Dn中的至少一者發光。在此實施例中，電晶體T1~Tn的閘極端依序接收閘極驅動訊號，電晶體T1~Tn依序導通，以驅動發光二極體元件520進行發光。In some embodiments, the transistors T1 ˜T in the light emitting diode circuit 500 are sequentially turned on until at least one of the P-N diode structures D1 ˜Dn emits light. In this embodiment, the gate terminals of the transistors T1-Tn receive gate driving signals sequentially, and the transistors T1-Tn are sequentially turned on to drive the light-emitting diode device 520 to emit light.

在一些實施例中，發光二極體電路500可以根據參考電壓VDD的大小或發光二極體電路500的設計規格或功耗需求，來決定導通電晶體T1~Tn中的哪一者。舉例來說，若發光二極體電路500的設計者希望可以盡可能減少功率消耗而達到高亮度，可對電晶體T1的閘極端提供閘極驅動訊號，此時可透過較小的電流來使n個P-N二極體結構D1~Dn發光，有助於降低發光二極體電路500的功率消耗。In some embodiments, the light emitting diode circuit 500 may determine which of the transistors T1 -Tn is turned on according to the magnitude of the reference voltage VDD or the design specifications or power consumption requirements of the light emitting diode circuit 500 . For example, if the designer of the light-emitting diode circuit 500 wishes to reduce power consumption as much as possible to achieve high brightness, a gate driving signal can be provided to the gate terminal of the transistor T1, and at this time, a smaller current can be used to enable The n P-N diode structures D1 to Dn emit light, which helps to reduce the power consumption of the light emitting diode circuit 500 .

綜上所述，本揭示的各實施例將串連耦接的複數個P-N二極體結構整合為單一發光二極體元件，而可用於發光二極體電路中進行發光並節省功率消耗。此外，若將複數個電晶體電性耦接至如此發光二極體元件的每個P-N二極體結構的電極，即可選擇欲導通的一或多個P-N二極體結構，因此若有一個P-N二極體結構損壞時，僅需選擇導通未損壞的P-N二極體結構，便不須將整個發光二極體元件替換，而仍夠進行發光。To sum up, various embodiments of the present disclosure integrate a plurality of P-N diode structures coupled in series into a single LED element, which can be used in an LED circuit to emit light and save power consumption. In addition, if a plurality of transistors are electrically coupled to the electrodes of each P-N diode structure of such a light-emitting diode element, one or more P-N diode structures to be turned on can be selected, so if there is one When the P-N diode structure is damaged, it is only necessary to select a P-N diode structure that is not damaged, so that the entire light-emitting diode element does not need to be replaced, and it is still sufficient to emit light.

雖然本揭示內容已以實施方式揭露如上，然其並非用以限定本發明。任何熟習此技藝之人，在不脫離本揭示內容之精神及範圍內，當可作各種更動及潤飾。本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed above in terms of implementation, it is not intended to limit the present invention. Any person skilled in the art should be able to make various changes and modifications without departing from the spirit and scope of this disclosure. The scope of protection of the content of this disclosure should be defined by the scope of the appended patent application.

VDD:參考電壓 t1:電晶體 120:發光二極體元件 i1:電流 d1:P-N二極體結構 d2:P-N二極體結構 VSS:參考電壓 220:發光二極體元件 320:發光二極體元件 D1~Dn:P-N二極體結構 P1~Pn:電極墊 N1~Nn:電極墊 DIS:距離 322:基體 324:P型摻雜層 326:主動層 328:N型摻雜層 420:發光二極體元件 422:基體 424:N型摻雜層 426:主動層 428:P型摻雜層 500:發光二極體電路 520:發光二極體元件 T1~Tn:電晶體 620:發光二極體元件 CON:互連結構 I1:電流 I2:電流 VDD: reference voltage t1: Transistor 120: light emitting diode element i1: current d1: P-N diode structure d2: P-N diode structure VSS: reference voltage 220: light emitting diode element 320: light-emitting diode components D1~Dn: P-N diode structure P1~Pn: electrode pad N1~Nn: electrode pads DIS: distance 322: matrix 324: P-type doped layer 326: active layer 328: N-type doped layer 420: light emitting diode components 422: Matrix 424: N-type doped layer 426: active layer 428: P-type doped layer 500: light emitting diode circuit 520: light-emitting diode components T1~Tn: Transistor 620: light-emitting diode components CON: interconnect structure I1: current I2: current

第1圖為根據本揭示一些實施例之顯示裝置中之發光二極體電路的示意圖。 第2圖為根據本揭示一些實施例之發光二極體元件的結構示意圖。 第3A圖為根據本揭示一些實施例之發光二極體元件的示意圖。 第3B圖為根據本揭示一些實施例之第3A圖中發光二極體元件的截面圖。 第4A圖為根據本揭示一些實施例之發光二極體元件的示意圖。 第4B圖為根據本揭示一些實施例之第4A圖中發光二極體元件的截面圖。 第5圖為根據本揭示一些實施例之顯示裝置中之發光二極體電路的示意圖。 第6圖為根據本揭示一些實施例之第5圖中發光二極體電路的局部示意圖。 第7A圖為根據本揭示一些實施例之第5圖發光二極體電路操作於發光期間的示意圖。 第7B圖為根據本揭示一些實施例之第5圖發光二極體電路操作於發光期間的示意圖。 FIG. 1 is a schematic diagram of a light emitting diode circuit in a display device according to some embodiments of the present disclosure. FIG. 2 is a schematic structural view of a light emitting diode device according to some embodiments of the present disclosure. FIG. 3A is a schematic diagram of a light emitting diode device according to some embodiments of the present disclosure. Figure 3B is a cross-sectional view of the light emitting diode element of Figure 3A according to some embodiments of the present disclosure. FIG. 4A is a schematic diagram of a light emitting diode device according to some embodiments of the present disclosure. Figure 4B is a cross-sectional view of the light emitting diode element of Figure 4A according to some embodiments of the present disclosure. FIG. 5 is a schematic diagram of a light emitting diode circuit in a display device according to some embodiments of the present disclosure. FIG. 6 is a partial schematic diagram of the LED circuit in FIG. 5 according to some embodiments of the present disclosure. FIG. 7A is a schematic diagram of the light-emitting diode circuit of FIG. 5 operating during a light-emitting period according to some embodiments of the present disclosure. FIG. 7B is a schematic diagram of the light-emitting diode circuit of FIG. 5 operating during a light-emitting period according to some embodiments of the present disclosure.

VDD:參考電壓 VDD: reference voltage

t1:電晶體 t1: Transistor

120:發光二極體元件 120: light emitting diode element

i1:電流 i1: current

d1:P-N二極體結構 d1: P-N diode structure

d2:P-N二極體結構 d2: P-N diode structure

VSS:參考電壓 VSS: reference voltage

Claims (9)

一種發光二極體元件，包含：一基體；以及複數個P-N二極體結構，彼此串聯耦接並橫向地相鄰配置而整合在該基體上；其中該些P-N二極體結構包含複數個P型摻雜層以及複數個N型摻雜層，該些P型摻雜層在該基體上相對於該些N型摻雜層配置；其中該些P-N二極體結構中一第一P-N二極體結構的該P型摻雜層電性耦接該些P-N二極體結構中相鄰該第一P-N二極體結構之一第二P-N二極體結構的該N型摻雜層；其中該些第一電極墊中的相鄰二者彼此間隔約3~300微米，該些第二電極墊中的相鄰二者彼此間隔約3~300微米。 A light-emitting diode element, comprising: a base body; and a plurality of P-N diode structures, coupled in series with each other and arranged laterally adjacent to and integrated on the base body; wherein the P-N diode structures include a plurality of P Type doped layer and a plurality of N-type doped layers, these P-type doped layers are arranged on the substrate relative to these N-type doped layers; wherein in the P-N diode structure, a first P-N diode The P-type doped layer of the bulk structure is electrically coupled to the N-type doped layer of a second P-N diode structure adjacent to the first P-N diode structure among the P-N diode structures; wherein the The distance between adjacent two of the first electrode pads is approximately 3-300 microns, and the distance between adjacent two of the second electrode pads is approximately 3-300 microns. 如請求項1所述之發光二極體元件，進一步包含：複數個第一電極墊，電性耦接該些P-N二極體結構中對應的該些P型摻雜層；以及複數個第二電極墊，電性耦接該些P-N二極體結構中對應的該些N型摻雜層；其中該些第二電極墊中的一第m個第二電極墊電性耦接該些第一電極墊中的一第(m+1)個第一電極墊，m為大於 1的正整數。 The light emitting diode element as claimed in claim 1, further comprising: a plurality of first electrode pads electrically coupled to the corresponding P-type doped layers in the P-N diode structures; and a plurality of second electrode pads The electrode pads are electrically coupled to the corresponding N-type doped layers in the P-N diode structures; wherein an m-th second electrode pad among the second electrode pads is electrically coupled to the first One (m+1)th first electrode pad among the electrode pads, m is greater than A positive integer of 1. 如請求項2所述之發光二極體元件，其中該些第一電極墊及該些第二電極墊皆外露而作為獨立的電極。 The light emitting diode device as claimed in claim 2, wherein the first electrode pads and the second electrode pads are exposed as independent electrodes. 如請求項2所述之發光二極體元件，其中該些P型摻雜層配置於該些N型摻雜層與該基體之間，且該些P-N二極體結構中任兩相鄰P-N二極體結構之其中一者的該P型摻雜層透過一互連結構電性耦接另一者的該N型摻雜層。 The light-emitting diode element as claimed in item 2, wherein the P-type doped layers are arranged between the N-type doped layers and the substrate, and any two adjacent P-N diode structures in the P-N diode structures The P-type doped layer of one of the diode structures is electrically coupled to the N-type doped layer of the other through an interconnection structure. 一種顯示裝置中之發光二極體電路，包含：複數個電晶體，該些電晶體的多個第一端彼此電性耦接且用以接收一第一參考電壓；以及一發光二極體元件，該發光二極體元件電性耦接於該些電晶體與一第二參考電壓之間，該發光二極體元件包含複數個P-N二極體，該些P-N二極體彼此串聯耦接且整合於單一的一晶片上；其中，該些電晶體用以驅動該發光二極體元件進行發光，該些電晶體的多個第二端分別電性耦接該些P-N二極體的多個陽極。 A light-emitting diode circuit in a display device, comprising: a plurality of transistors, a plurality of first ends of the transistors are electrically coupled to each other and used to receive a first reference voltage; and a light-emitting diode element The light-emitting diode element is electrically coupled between the transistors and a second reference voltage, the light-emitting diode element includes a plurality of P-N diodes, and the P-N diodes are connected in series and Integrated on a single chip; wherein, the transistors are used to drive the light-emitting diode element to emit light, and the plurality of second ends of the transistors are respectively electrically coupled to a plurality of the P-N diodes. anode. 如請求項5所述之發光二極體電路，其中： 當該些電晶體中一第m個電晶體的閘極端接收一閘極驅動訊號時，該第m個電晶體用以傳送該第一參考電壓至該些P-N二極體中的一第m個P-N二極體，以使該第m個P-N二極體至一第n個P-N二極體發光，m及n皆為大於1的正整數，m小於或等於n。 The light emitting diode circuit as claimed in item 5, wherein: When the gate terminal of an mth transistor among the transistors receives a gate drive signal, the mth transistor is used to transmit the first reference voltage to an mth of the P-N diodes P-N diodes, so that the m-th P-N diodes to one n-th P-N diodes emit light, m and n are both positive integers greater than 1, and m is less than or equal to n. 如請求項5所述之發光二極體電路，其中：當該些P-N二極體中的一第m個P-N二極體損壞時，該些電晶體中一第(m+1)個電晶體的閘極端用以接收一閘極驅動訊號，該第(m+1)個電晶體用以傳送該第一參考電壓至該些P-N二極體中的一第(m+1)個P-N二極體。 The light-emitting diode circuit as described in Claim 5, wherein: when an m-th P-N diode among the P-N diodes is damaged, a (m+1)th transistor among the transistors The gate terminal is used to receive a gate drive signal, and the (m+1)th transistor is used to transmit the first reference voltage to a (m+1)th P-N diode among the P-N diodes body. 如請求項5所述之發光二極體電路，其中該些電晶體用以響應於複數不同的閘極驅動訊號依序導通，以驅動該些P-N二極體中的至少一者發光。 The light-emitting diode circuit as described in Claim 5, wherein the transistors are used for sequentially conducting in response to a plurality of different gate driving signals, so as to drive at least one of the P-N diodes to emit light. 如請求項5所述之發光二極體電路，其中該發光二極體元件包含複數個電極墊，該些電極墊中的每一者電性耦接於該些P-N二極體中對應一者的陰極或陽極與該些電晶體中對應一者之間，該些電極墊外露而作為獨立的電極。 The light-emitting diode circuit as described in claim 5, wherein the light-emitting diode element includes a plurality of electrode pads, and each of the electrode pads is electrically coupled to a corresponding one of the P-N diodes Between the cathode or anode of the transistor and the corresponding one of the transistors, the electrode pads are exposed as independent electrodes.
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