TWI790353B - 元件的移設方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 239000002390 adhesive tape Substances 0.000 claims abstract description 87
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 148
- 235000012431 wafers Nutrition 0.000 description 59
- 239000004065 semiconductor Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
[課題]提供一種可以有效率地將元件自晶圓移設至安裝基板之元件的移設方法。
[解決手段]一種將複數個元件移設至具備複數個電極之安裝基板之元件的移設方法,包含:在隔著緩衝層形成於基板的正面側之複數個元件上,貼附具有擴張性的膠帶的步驟;自基板的背面側對緩衝層照射雷射光束以破壞緩衝層,雷射光束是對基板具有穿透性且對緩衝層具有吸收性之波長的雷射光束;使膠帶往離開基板的方向移動來將基板與複數個元件分離,藉此將形成於基板之複數個元件轉印於膠帶的步驟;擴張膠帶,以使貼附於膠帶之複數個元件之配置會與複數個電極之配置對應的步驟;及一次地將貼附於已擴張之膠帶之複數個元件接合於複數個電極的步驟。
Description
發明領域
本發明是有關於一種將複數個元件自晶圓移設至安裝基板之元件的移設方法。
發明背景
藉由沿著分割預定線(分割道)來分割形成有複數個元件的晶圓,便可獲得各自包含該元件的複數個元件晶片。該晶圓的分割是使用例如切割裝置或雷射加工裝置等來實施。
使用雷射加工裝置的手法中,是藉由沿著分割預定線來照射對晶圓具有吸收性之波長的雷射光束而使晶圓蒸發,以分割晶圓。專利文獻1中揭示有一種手法,是沿著分割預定線來照射脈衝振盪之雷射光束而於晶圓形成溝槽,並沿著該溝槽來分割晶圓。然後,藉由將透過晶圓之分割所獲得的元件晶片安裝於安裝基板,便可製作所欲之封裝基板。
作為形成於晶圓的元件之例子,可舉出LED(Light Emitting Diode)等的光元件。例如,可以藉由使構成pn接面(pn junction)之n型半導體層及p型半導體層在由藍寶石或SiC所構成之基板上進行磊晶成長來形成光元件。
又,為了將光元件自晶圓移設至安裝基板,已知有一種在不分割晶圓的情況下將光元件自晶圓分離的手法。專利文獻2中揭示有一種手法,是在晶圓之正面形成了構成光元件之半導體膜之後,自晶圓的背面側照射雷射光束而在晶圓與半導體膜的界面附近形成變質層,並以該變質層來將晶圓與半導體膜分離。
先前技術文獻
專利文獻
專利文獻1:日本專利特開平10-305420號公報
專利文獻2:日本專利特開2004-72052號公報
發明概要
發明欲解決之課題
如上述地,在將元件安裝於安裝基板時,必須將形成於晶圓的元件移設至安裝基板。該元件的移設是藉由重複例如以下作業來進行,即,自晶圓將元件逐個拾取並移設至安裝基板,然後將元件在安裝基板之預定位置上進行晶片接合(die bonding)的作業。該情況下,為了要將所有的元件安裝於安裝基板,會變得需要長時間的移設作業,導致生產性降低。
本發明是有鑑於如此之問題點而作成者,目的在於提供一種可以有效率地將元件自晶圓移設至安裝基板之元件的移設方法。
用以解決課題之手段
根據本發明,可以提供一種元件的移設方法,是將複數個元件移設至具備複數個電極之安裝基板之元件的移設方法,包含:膠帶貼附步驟,在隔著緩衝層形成於基板的正面側之複數個該元件上,貼附具有擴張性的膠帶;緩衝層破壞步驟,實施該膠帶貼附步驟後,自該基板的背面側對該緩衝層照射雷射光束以破壞該緩衝層,該雷射光束是對該基板具有穿透性且對該緩衝層具有吸收性之波長的雷射光束;轉印步驟,實施該緩衝層破壞步驟後,使該膠帶往離開該基板的方向移動來將該基板與複數個該元件分離,藉此將形成於該基板之複數個該元件轉印於該膠帶;膠帶擴張步驟,實施該轉印步驟後,擴張該膠帶,以使貼附於該膠帶之複數個該元件之配置會與複數個該電極之配置對應;及晶片接合步驟,實施該膠帶擴張步驟後,一次地將貼附於已擴張之該膠帶之複數個該元件接合於複數個該電極。
較佳的是,該元件為LED。並且,較佳的是,該元件的移設方法在實施該膠帶擴張步驟之前或之後,更包含使該元件之與該膠帶接觸的面露出的步驟。又,較佳的是,該膠帶包含由紫外線硬化型樹脂所構成之黏著劑,且,該元件的移設方法在實施該膠帶擴張步驟之後,更包含對該膠帶照射紫外線而使該黏著材硬化的步驟。
發明效果
本發明的一態樣之元件的移設方法中,首先,將形成於晶圓的複數個元件轉印於具有擴張性的膠帶。然後,藉由擴張具有擴張性的膠帶,使複數個元件之配置與安裝基板中之元件的安裝位置之配置對應後,一次地將複數個元件移設至安裝基板。藉此,將可以有效率地將元件自晶圓移設至安裝基板。
用以實施發明之形態
以下,參照附加圖式來說明本發明的一態樣的實施形態。圖1是顯示本實施形態之晶圓11的構成例的立體圖。
晶圓11具備圓盤狀的基板13,該基板13具有正面13a及背面13b。基板13是藉由排列為格子狀的複數條分割預定線(分割道)15而劃分成複數個區域,並在該複數個區域的正面13a側各自形成有以IC(Integrated Circuit)、LED等構成之元件17。
基板13的材質、形狀、構造、大小等並無限制。例如,作為基板13可以使用半導體基板(矽基板、SiC基板、GaAs基板、InP基板、GaN基板等)、藍寶石基板、陶瓷基板、樹脂基板、金屬基板等。又,元件17的種類、數量、形狀、構造、大小、配置等也無限制。
晶圓11的更具體的構成之一例顯示於圖2。圖2是顯示在基板21上隔著緩衝層23形成有光元件25之光元件晶圓19的構成例的截面圖。
在基板21上,隔著複數個緩衝層23形成有複數個光元件25。光元件25各自具備:p型半導體層27,以電洞成為多數載子的p型半導體所構成;及n型半導體層29,以電子成為多數載子的n型半導體所構成。藉由p型半導體層27及n型半導體層29構成pn接面,而可以獲得能夠藉由電洞及電子之再結合而發光的光元件25。
緩衝層23是藉由例如具有將起因於基板21與p型半導體層27間之晶格失配(lattice mismatch)的缺陷發生加以抑制之功能的層所構成,其材料可因應於基板21之晶格常數及p型半導體層27之晶格常數而適當選擇。又,緩衝層23是在後述之緩衝層破壞步驟受雷射光束照射而被破壞的層,也會作為用以將基板21與光元件25分離的分離層來發揮功能。
緩衝層23、p型半導體層27、n型半導體層29的材料並無限制,只要能夠於基板21上形成光元件25的話,就可以自由選擇。例如,作為基板21可以使用藍寶石基板、SiC基板等,並藉由磊晶成長而於基板21上依次形成由GaN所構成之緩衝層23、由p型GaN所構成之p型半導體層27、及由n型GaN所構成之n型半導體層29。各層之成膜可使用例如MOCVD(Metal Organic Chemical Vapor Deposition)法或MBE(Molecular Beam Epitaxy)法等。
另,圖2中雖顯示藉由p型半導體層27及n型半導體層29所構成之光元件25,但光元件25的構成並不限定於此。例如,亦可使用在p型半導體層27與n型半導體層29之間具備發光層,且自該發光層放出光的光元件25。
當使用由上述之光元件25所代表之元件17(參照圖1)來製作封裝基板時,必須將元件17自晶圓11移設至安裝基板。該移設雖然可以藉由例如將形成於基板13之元件17逐個拾取,然後在安裝基板之預定位置上進行晶片接合來實施,但該手法會在元件17的移設上花費龐大的作業時間。
本實施形態之元件的移設方法中,首先,將形成於基板13的複數個元件17轉印於可用外力來擴張其形狀的膠帶(具有擴張性的膠帶)。然後,藉由擴張具有擴張性的膠帶,使複數個元件17之配置與安裝基板中之元件的安裝位置之配置對應後,一次地將複數個元件17移設至安裝基板。藉此,將可以有效率地將元件17自晶圓11移設至安裝基板。
圖3是顯示本實施形態之元件的移設方法之例子的流程圖。以下,參照圖3來說明本實施形態之元件的移設方法。又,以下作為一例,特別是針對將光元件25自光元件晶圓19(參照圖2)分離並移設至安裝基板的情況來說明。
首先,實施膠帶貼附步驟S1,在形成於基板21之複數個光元件25上,貼附具有擴張性的膠帶。圖4是顯示光元件晶圓19貼附於膠帶31之樣態的立體圖。圓盤狀之基板21的正面21a側形成有複數個光元件25(參照圖2)。並且,膠帶31是可藉由外力來擴張(伸展)的膠帶(具有擴張性的膠帶)。
在膠帶31的外周部貼附環狀的框架33,並且將形成於基板21之正面21a側的複數個光元件25貼附於膠帶31。藉此,光元件晶圓19會在基板21之背面21b側露出於上方的狀態下被支撐於框架33。
膠帶31的材料只要具有擴張性,且可以接著於複數個光元件25的話,就沒有限制。不過,為了要能夠在後續的工序中將複數個光元件25輕易地自膠帶31分離,因此膠帶31的黏著劑由具有黏著力會因為光或熱等的外來刺激而降低之性質的材料所構成是較為理想的。例如,作為膠帶31的黏著劑可以使用紫外線硬化型樹脂。
接著,實施緩衝層破壞步驟S2,自基板21的背面21b側對緩衝層23照射雷射光束以破壞緩衝層23。緩衝層破壞步驟S2中,首先,以雷射加工裝置支撐光元件晶圓19。
圖5是示意地顯示光元件晶圓19受雷射加工裝置2支撐之狀態的立體圖。雷射加工裝置2具備:工作夾台4,保持光元件晶圓19;及雷射加工單元6,可照射對光元件晶圓19之基板21具有穿透性且對緩衝層23具有吸收性之波長的雷射光束。
工作夾台4是隔著膠帶31而吸引保持光元件晶圓19。具體而言,工作夾台4的上表面成為保持光元件晶圓19的保持面,且該保持面是透過形成於工作夾台4之內部的吸引路(不圖示)來與吸引源(不圖示)連接。
在以雷射加工裝置2所配備之夾具14(參照圖6)固定框架33,並以工作夾台4的保持面支撐光元件晶圓19的狀態下,使吸引源的負壓作用於保持面,光元件晶圓19便會受工作夾台4吸引保持。又,工作夾台4是藉由移動機構(不圖示)而往加工進給方向(X軸方向)及分度進給方向(Y軸方向)移動。
光元件晶圓19是以基板21之背面21b會露出於上方的方式被工作夾台4吸引保持。在該狀態下,由雷射加工單元6朝向光元件晶圓19照射雷射光束。
雷射加工單元6具有圓筒狀的套管8。套管8的前端部裝設有用以將脈衝雷射光束進行聚光的聚光器10,該脈衝雷射光束是由雷射加工裝置2所配備之YAG雷射振盪器或YVO4
雷射振盪器等的脈衝雷射光束振盪器(不圖示)進行了振盪之脈衝雷射光束。
更進一步地,在套管8裝設有拍攝雷射光束之照射區域的攝像組件12。藉由攝像組件12所取得之圖像會被使用在用以進行聚光器10與光元件晶圓19之對位的型樣匹配等的圖像處理。藉此,可以調整雷射光束的照射位置。
在對形成於基板21之正面21a側的緩衝層23(參照圖2)照射雷射光束時,會使工作夾台4移動至聚光器10之下方,並藉由聚光器10將對基板21具有穿透性且對緩衝層23具有吸收性之波長的雷射光束進行聚光後照射於緩衝層23。又,雷射光束的強度是設定成將可以破壞緩衝層23。
圖6是顯示對緩衝層23照射雷射光束之樣態的截面圖。形成於基板21之正面21a側的複數個光元件25被貼附於膠帶31。並且,框架33被夾具14固定,且光元件晶圓19是以基板21之背面21b側會露出於上方的方式被工作夾台4吸引保持。
一旦對光元件晶圓19照射雷射光束,雷射光束便會穿透基板21而被緩衝層23吸收,從而破壞緩衝層23。又,不需要藉由雷射光束的照射來將基板21與緩衝層23完全分離,緩衝層23只要被破壞到如下程度即可,即,在後續的工序中將膠帶31自光元件晶圓19剝離時,能夠將基板21與緩衝層23分離的程度。
接著,實施轉印步驟S3,將基板21與光元件25分離,並將形成於基板21之正面21a側的複數個光元件25轉印於膠帶31。
轉印步驟S3中,會將貼附於光元件晶圓19的膠帶31剝離。具體而言,是使膠帶31往離開基板21的方向移動。此時,設置於基板21與光元件25之間的緩衝層23已在緩衝層破壞步驟S2被破壞,而減弱了基板21與光元件25的結合。因此,一旦使膠帶31移動,光元件25便會追隨膠帶31而與基板21分離。
又,在將膠帶31自光元件晶圓19剝離時,亦可於基板21與光元件25之間***刀具等的剝離構件,來幫助基板21與光元件25的分離。藉此,即便緩衝層破壞步驟S2中之緩衝層23的破壞不充分,仍可將光元件25自基板21分離。
接著,實施膠帶擴張步驟S4,將轉印有複數個光元件25之膠帶31擴張而變更光元件25之間隔。圖7(A)是顯示貼附有複數個光元件25之膠帶31被擴張之樣態的平面圖。
由於膠帶31具有擴張性,因此可藉由施加外力而擴張。而且,一旦擴張膠帶31,鄰接之光元件25間的距離便會擴大,而變更複數個光元件25的配置。圖7(B)是顯示擴張後之膠帶31的平面圖。如圖7(B)所示地,一旦擴張膠帶31,光元件25的間隔便會因應於膠帶31的擴張量而擴大。
貼附於膠帶31之複數個光元件25會在後續的工序中以預定的配置來安裝於安裝基板。因此,膠帶擴張步驟S4中,會擴張膠帶31,以使貼附於膠帶31之光元件25之配置會與安裝基板上的光元件25之配置對應。例如,在將貼附於膠帶31之複數個光元件25與以預定的配置設置於安裝基板之複數個電極連接時,會擴張膠帶31,以使貼附於膠帶31之光元件25之配置會與該複數個電極之配置對應。
又,所謂複數個光元件25之配置與複數個電極之配置對應,是指複數個光元件25是以可各自連接所欲之電極的間隔來配置的狀態。例如,只要擴張膠帶31,以使貼附於膠帶31之複數個光元件25的間隔會與形成於安裝基板之複數個電極的間隔成為大致相同即可。
擴張膠帶31的方法並無限制,可使用專用之擴張裝置等來進行。例如,可以使用具備支撐單元與抵接部的擴張裝置,該支撐單元支撐膠帶31之外周部,該抵接部抵接於膠帶31之背面(沒有形成光元件25的面)側。該情況下,可以在以支撐單元支撐膠帶31之外周部的狀態下,使膠帶31的背面側中央部抵接於抵接部,並使抵接部自膠帶31的背面側朝向正面側相對移動,藉此來擴張膠帶31。
又,圖7(A)及圖7(B)中雖然顯示了在框架33(參照圖4等)已自膠帶31移除的狀態下擴張膠帶31的樣態,但膠帶31的擴張亦可在貼附有框架33的狀態下進行。例如,可以在以上述之擴張裝置的支撐單元支撐住貼附於膠帶31之框架33的狀態下實施膠帶31的擴張。
在膠帶擴張步驟S4之後,進行使膠帶31之黏著力降低的處理,以在後續的工序中容易將光元件25自膠帶31剝離是較為理想的。例如,當膠帶31的黏著劑為紫外線硬化型樹脂時,可實施對膠帶31照射紫外線的步驟,藉此來使膠帶31硬化,以使膠帶31的黏著力降低。
接著,實施晶片接合步驟S5,一次地將貼附於已擴張之膠帶31之複數個光元件25移設至安裝基板來進行接合。晶片接合步驟S5中,是維持貼附於膠帶31之複數個光元件25的配置而移送至安裝基板來進行安裝。因此,不需要對每個光元件25進行複數個光元件25與安裝基板的對位,將可以有效率地將元件自膠帶31移設至安裝基板。
將複數個光元件25移設至安裝基板的方法並無特別限定。例如,可以使用一次地自膠帶31拾取複數個光元件25並移設至安裝基板的移設單元,亦可藉由將膠帶31直接貼附於安裝基板來將複數個光元件25轉印於安裝基板。
參照圖8、圖9來說明藉由移設單元將複數個光元件25移設至安裝基板的方法。圖8是顯示複數個光元件25受移設單元20保持之樣態的立體圖。移設單元20具備:板狀的基台22;及複數個吸附盤24,設置於基台22之下表面側,會吸引保持光元件25。
首先,將膠帶31保持為水平,以使複數個光元件25露出於上側,並於膠帶31的上方配置移設單元20。然後,使移設單元20往鉛直方向下方移動,而使複數個吸附盤24各自與光元件25接觸。在此狀態下,藉由以複數個吸附盤24吸引複數個光元件25,複數個光元件25便會保持於移設單元20。之後,在將膠帶31保持於該處的狀態下,使移設單元20往鉛直方向上側移動,藉此自膠帶31剝離複數個光元件25,並以移設單元20來拾取。藉此,光元件25之與膠帶31接觸的面會露出。
複數個吸附盤24是配置成會與貼附於膠帶31之複數個光元件25之配置對應。具體而言,複數個吸附盤24的間隔與貼附於膠帶31之複數個光元件25的間隔大致一致。因此,將可以藉由使用移設單元20而一次地拾取複數個光元件25。
然後,使移設單元20移動至複數個光元件25的移設目的地即安裝基板上。圖9是顯示藉由移設單元20在安裝基板35上配置複數個光元件25之樣態的立體圖。於安裝基板35形成有各自會與光元件25連接的複數個電極。此處作為一例,顯示光元件25為紅色LED,且於安裝基板35形成有複數個電極37R、複數個電極37G、及複數個電極37B之例子,電極37R會與紅色LED連接,電極37G會與綠色LED連接,電極37B會與藍色LED連接。
首先,將安裝基板35配置於預定的位置,並於複數個電極37R上塗佈銀膠等的接著劑。接著,將移設單元20定位,以使各個吸附盤24會配置於複數個電極37R的上方。然後,使移設單元20往鉛直方向下方移動,而使複數個光元件25之與膠帶31接觸的面各自隔著接著劑來與電極37R連接。如此地進行,複數個光元件25便會接合於安裝基板35。
又,複數個吸附盤24是設置成其配置會與複數個電極37R之配置對應。因此,可以藉由使用移設單元20,來一次地將複數個光元件25接合於安裝基板35。
圖10是顯示接合有複數個光元件25之安裝基板35的立體圖。在設置於安裝基板35之複數個電極37R(參照圖9)上,各自接合有以紅色LED構成之光元件25。並且,藉由以同樣的方法實施一次地在複數個電極37G上各自接合綠色LED的步驟、及一次地在複數個電極37B上各自接合藍色LED的步驟,便可以製作安裝有3色之LED的LED封裝。
此外,當使用移設單元20移設光元件25時,光元件25之與膠帶31接觸的面側(背面側)會與形成於安裝基板之電極連接,但亦可將光元件25之不與膠帶31接觸的面側(正面側)與電極連接。將光元件25之正面側與形成於安裝基板35之電極連接的方法之例子顯示於圖11。
圖11是顯示使用輥件26將複數個光元件25安裝於安裝基板35之樣態的立體圖。使用輥件26將複數個光元件25安裝於安裝基板35時,首先,將安裝基板35配置於預定的位置,並在形成於安裝基板35之電極上塗佈銀膠等的接著劑,然後使已擴張之膠帶31的正面31a(形成有複數個光元件25的面)與安裝基板35之形成有電極的面相對向。此時,將膠帶31及安裝基板35定位,以使複數個光元件25會各自配置於複數個電極(圖11中為電極37R)上。
然後,使輥件26往箭頭A所示的方向旋轉,並以輥件26將膠帶31的背面31b(沒有形成光元件25的面)按壓於安裝基板35側。藉此,複數個光元件25會各自隔著接著劑來與電極37R連接,而接合於安裝基板。
另,將電極37R與光元件25接著的接著材是使用其接著力較膠帶31的接著力更高者。藉由進行前述之使膠帶31的接著力降低的處理(紫外線的照射等),對塗佈於電極37R之接著劑所要求的接著力便會變低,而可以提升接著劑之材料選擇的自由度。
之後,藉由將膠帶31自安裝基板35剝離,複數個光元件25與膠帶31便會分離,而可以獲得接合有複數個光元件25的安裝基板35(參照圖10)。
如上述地,本實施形態之元件的移設方法中,在將複數個光元件25貼附於具有擴張性的膠帶31之後,藉由擴張膠帶31來調節複數個光元件25的配置,就能夠使貼附於膠帶31之複數個光元件25的配置與安裝基板35中之光元件25的安裝位置的配置對應。藉此,能夠一次地將複數個光元件25移設至移設基板,將可以有效率地進行元件的移設。
尤其是,在製作以預定的週期於安裝基板上配置多數個LED的LED封裝等時,只要可以一次地將形成於同一個晶圓的複數個元件以預定的間隔配置於安裝基板的話,元件的移設作業的效率便會大幅提升。因此,本實施形態之元件的移設方法特別有益於將複數個LED移設至移設基板來製作LED封裝的情況等。
又,本實施形態之元件的移設方法中,是擴張具有擴張性的膠帶31,來擴大複數個光元件25的間隔之後再拾取元件。因此,可以防止在拾取時,因光元件25彼此接觸所造成之光元件25的破損,而可以謀求成品率的提升。
並且,上述之實施形態中顯示了一次地將貼附於膠帶31之所有的光元件25移設至安裝基板35之例子,但亦可藉由實施複數次的晶片接合步驟S5來移設所有的光元件25。亦即,亦可藉由重複複數次將貼附於膠帶31之複數個光元件25的一部分移設至安裝基板35的作業,來移設所有的光元件25。
又,當實施複數次晶片接合步驟S5時,亦可於晶片接合步驟S5的實施後,再度實施膠帶擴張步驟S4。亦即,亦可在一次地將貼附於膠帶31之複數個光元件25的一部分移設至安裝基板35後,擴張膠帶31以再次調整剩餘之光元件25的配置,之後再進行後續的移設作業。
尤其是,當因膠帶31的擴張量不均等的影響,而難以透過1次的膠帶31擴張來將所有的光元件25配置於所欲之位置時,如上述地將光元件25的移設分為複數次進行,並逐次實施膠帶擴張步驟S4來調整光元件25的配置是較為理想的。藉此,可以精度良好地控制光元件25的間隔,而變得容易將光元件25配置於安裝基板35的所欲之位置。
又,將光元件25接著於安裝基板35時,光元件25的接著面可適當變更。具體而言,不論將圖7(B)所示的光元件25之與膠帶31接觸的面側(背面側)及不與膠帶31接觸的面側(正面側)之何者接著於安裝基板35皆可。當變更光元件25的接著面時,會於晶片接合步驟S5之前實施更換光元件25之露出面的步驟。
例如,可在膠帶擴張步驟S4之後,使用圖8、圖9所示的方法,藉此來使光元件25的背面側露出,而將光元件25的背面側接著於安裝基板。圖9中,光元件25之正面側會被吸附於吸附盤24,而成為背面側露出的狀態。
又,亦可在膠帶擴張步驟S4之前進行膠帶的重新黏貼,藉此來使光元件25的背面側露出。具體而言,在貼附有複數個光元件25的膠帶31被擴張前(參照圖7(A)),在複數個光元件25的正面側貼附更換黏貼用的膠帶。然後,剝離膠帶31將複數個光元件25與膠帶31分離,藉此複數個光元件25便會以其背面側露出的狀態轉印至更換黏貼用膠帶。
該情況下,由於在後續的膠帶擴張步驟S4會擴張更換黏貼用來變更光元件25的配置,因此更換黏貼用膠帶是使用具有擴張性的膠帶。並且,當使用更換黏貼用膠帶時,膠帶31不一定需要具有擴張性亦可。
又,上述中主要是針對將隔著緩衝層23形成於基板21上之光元件25移設的情況來說明,但利用本實施形態之元件的移設方法移設之元件的種類並無限制。並且,緩衝層23的材料也是只要可以在緩衝層破壞步驟S2中藉由雷射光束的照射而破壞的話,就可以適當選擇。
另外,上述實施形態之構造、方法等,只要在不脫離本發明的目的之範圍內,均可適當變更而實施。
2‧‧‧雷射加工裝置
4‧‧‧工作夾台
6‧‧‧雷射加工單元
8‧‧‧套管
10‧‧‧聚光器
11‧‧‧晶圓
12‧‧‧攝像組件
13、21‧‧‧基板
13a、21a、31a‧‧‧正面
13b、21b、31b‧‧‧背面
14‧‧‧夾具
15‧‧‧分割預定線
17‧‧‧元件
19‧‧‧光元件晶圓
20‧‧‧移設單元
22‧‧‧基台
23‧‧‧緩衝層
24‧‧‧吸附盤
25‧‧‧光元件
26‧‧‧輥件
27‧‧‧p型半導體層
29‧‧‧n型半導體層
31‧‧‧膠帶
33‧‧‧框架
35‧‧‧安裝基板
37B、37G、37R‧‧‧電極
S1‧‧‧膠帶貼附步驟
S2‧‧‧緩衝層破壞步驟
S3‧‧‧轉印步驟
S4‧‧‧膠帶擴張步驟
S5‧‧‧晶片接合步驟
X、Y‧‧‧方向
圖1是顯示晶圓的構成例的立體圖。
圖2是顯示光元件晶圓的構成例的截面圖。
圖3是顯示元件的移設方法之例子的流程圖。
圖4是顯示光元件晶圓貼附於膠帶之樣態的立體圖。
圖5是示意地顯示光元件晶圓受雷射加工裝置支撐之狀態的立體圖。
圖6是顯示對緩衝層照射雷射光束之樣態的截面圖。
圖7(A)是顯示膠帶被擴張之樣態的平面圖,圖7(B)是顯示擴張後之膠帶的平面圖。
圖8是顯示複數個光元件受移設單元保持之樣態的立體圖。
圖9是顯示藉由移設單元在安裝基板上配置複數個光元件之樣態的立體圖。
圖10是顯示接合有複數個光元件之安裝基板的立體圖。
圖11是顯示使用輥件將複數個光元件安裝於安裝基板之樣態的立體圖。
11‧‧‧晶圓
13‧‧‧基板
13a‧‧‧正面
13b‧‧‧背面
15‧‧‧分割預定線
17‧‧‧元件
Claims (6)
- 一種元件的移設方法,是將複數個元件移設至具備複數個電極之安裝基板之元件的移設方法,包含:膠帶貼附步驟,在隔著緩衝層形成於基板的正面側之複數個該元件上,貼附具有擴張性的膠帶;緩衝層破壞步驟,實施該膠帶貼附步驟後,自該基板的背面側對該緩衝層照射雷射光束以破壞該緩衝層,該雷射光束是對該基板具有穿透性且對該緩衝層具有吸收性之波長的雷射光束;轉印步驟,實施該緩衝層破壞步驟後,使該膠帶往離開該基板的方向移動來將該基板與複數個該元件分離,藉此將形成於該基板之複數個該元件轉印於該膠帶;膠帶擴張步驟,實施該轉印步驟後,擴張該膠帶,以使貼附於該膠帶之複數個該元件之配置會與複數個該電極之配置對應;及晶片接合(die bonding)步驟,實施該膠帶擴張步驟後,一次地將貼附於已擴張之該膠帶之複數個該元件接合於複數個該電極。
- 如請求項1之元件的移設方法,其中該元件為LED。
- 如請求項1之元件的移設方法,其在實施該膠帶擴張步驟之前或之後,更包含使該元件之與該膠帶接觸的面露出的步驟。
- 如請求項1之元件的移設方法,其中該膠 帶包含由紫外線硬化型樹脂所構成之黏著劑,且,實施該膠帶擴張步驟後,更包含對該膠帶照射紫外線而使該黏著劑硬化的步驟。
- 如請求項1之元件的移設方法,其在該晶片接合步驟中,使用移設單元來將複數個該元件從該膠帶剝離並連接於複數個該電極,且該移設單元具備已配置成與貼附於該膠帶的複數個該元件的配置對應之複數個吸附盤。
- 如請求項1之元件的移設方法,其在該晶片接合步驟中,使該膠帶之設置有該元件的面與該安裝基板之設置有該電極的面相對向,並以輥件將該膠帶按壓於該安裝基板側,藉此將複數個該元件連接於複數個該電極。
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