TWI787852B - 接近式曝光用光掩模 - Google Patents

接近式曝光用光掩模 Download PDF

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Publication number
TWI787852B
TWI787852B TW110119984A TW110119984A TWI787852B TW I787852 B TWI787852 B TW I787852B TW 110119984 A TW110119984 A TW 110119984A TW 110119984 A TW110119984 A TW 110119984A TW I787852 B TWI787852 B TW I787852B
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TW
Taiwan
Prior art keywords
pattern
auxiliary pattern
auxiliary
exposure
photomask
Prior art date
Application number
TW110119984A
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English (en)
Chinese (zh)
Other versions
TW202201119A (zh
Inventor
齊藤隆史
Original Assignee
日商Ｓｋ電子股份有限公司
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Application filed by 日商Ｓｋ電子股份有限公司 filed Critical 日商Ｓｋ電子股份有限公司
Publication of TW202201119A publication Critical patent/TW202201119A/zh
Application granted granted Critical
Publication of TWI787852B publication Critical patent/TWI787852B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110119984A 2020-06-15 2021-06-02 接近式曝光用光掩模 TWI787852B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-103242 2020-06-15
JP2020103242A JP7475209B2 (ja) 2020-06-15 2020-06-15 プロキシミティー露光用フォトマスク

Publications (2)

Publication Number Publication Date
TW202201119A TW202201119A (zh) 2022-01-01
TWI787852B true TWI787852B (zh) 2022-12-21

Family

ID=78942434

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110119984A TWI787852B (zh) 2020-06-15 2021-06-02 接近式曝光用光掩模

Country Status (4)

Country Link
JP (1) JP7475209B2 (ko)
KR (1) KR102618940B1 (ko)
CN (1) CN113805428B (ko)
TW (1) TWI787852B (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1936702A (zh) * 2005-09-23 2007-03-28 联华电子股份有限公司 光学邻近校正光掩模及彩色滤光片的制造方法
US7568179B1 (en) * 2006-09-21 2009-07-28 Armen Kroyan Layout printability optimization method and system
CN104281000A (zh) * 2014-10-23 2015-01-14 京东方科技集团股份有限公司 一种掩膜板
TW201531794A (zh) * 2014-06-17 2015-08-16 Sk Electronics Co Ltd 近接式曝光用光罩
TW201833659A (zh) * 2016-11-07 2018-09-16 日商Ｈｏｙａ股份有限公司 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法

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JPS60128447A (ja) * 1983-12-14 1985-07-09 Fujitsu Ltd フオトマスク
JP2003233164A (ja) * 2002-02-12 2003-08-22 Fujitsu Ltd フォトマスク及びその製造方法
JP2004085612A (ja) * 2002-08-22 2004-03-18 Matsushita Electric Ind Co Ltd ハーフトーン位相シフトマスク、その製造方法およびそれを用いたパターン形成方法
KR20060077296A (ko) * 2004-12-30 2006-07-05 엘지.필립스 엘시디 주식회사 액정 표시 장치의 돌기 형성 방법 및 이를 이용한 액정표시 장치의 제조 방법
JP4389222B2 (ja) 2005-05-02 2009-12-24 エルピーダメモリ株式会社 マスクデータ作成方法
KR20070073244A (ko) * 2006-01-04 2007-07-10 주식회사 에스앤에스텍 그레이톤 블랭크마스크 및 포토마스크 제조방법
JP4992363B2 (ja) 2006-09-25 2012-08-08 凸版印刷株式会社 硬化パターンの製造方法
JP5160286B2 (ja) * 2008-04-15 2013-03-13 Ｈｏｙａ株式会社 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法
JP2010044149A (ja) * 2008-08-11 2010-02-25 Hoya Corp 多階調フォトマスク、パターン転写方法及び多階調フォトマスクを用いた表示装置の製造方法
JP5381051B2 (ja) * 2008-12-01 2014-01-08 大日本印刷株式会社 マルチスペクトルマスクおよびカラーフィルタの製造方法
KR20100080151A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 마스크 설계 방법, 이를 이용한 마스크 패턴 및 그의 제조방법
KR101096249B1 (ko) * 2009-05-29 2011-12-22 주식회사 하이닉스반도체 마스크 및 제조 방법
JP2011123111A (ja) * 2009-12-08 2011-06-23 Sharp Corp カラーフィルター形成方法およびそれを用いた固体撮像装置の製造方法
CN102109714B (zh) * 2009-12-25 2016-03-09 北京京东方光电科技有限公司 取向层及其制备方法、包括该取向层的液晶显示装置
WO2013094756A1 (ja) 2011-12-21 2013-06-27 大日本印刷株式会社 大型位相シフトマスクおよび大型位相シフトマスクの製造方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6118996B2 (ja) 2013-02-22 2017-04-26 パナソニックＩｐマネジメント株式会社 フォトマスク、並びにフォトマスクを用いたパターン形成方法及び加工方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
CN105824189B (zh) * 2016-06-08 2020-01-07 京东方科技集团股份有限公司 掩模板和基板间隔柱及其制备方法、显示面板
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6463536B1 (ja) * 2018-05-09 2019-02-06 株式会社エスケーエレクトロニクス プロキシミティ露光用フォトマスクとその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1936702A (zh) * 2005-09-23 2007-03-28 联华电子股份有限公司 光学邻近校正光掩模及彩色滤光片的制造方法
US7568179B1 (en) * 2006-09-21 2009-07-28 Armen Kroyan Layout printability optimization method and system
TW201531794A (zh) * 2014-06-17 2015-08-16 Sk Electronics Co Ltd 近接式曝光用光罩
CN104281000A (zh) * 2014-10-23 2015-01-14 京东方科技集团股份有限公司 一种掩膜板
TW201833659A (zh) * 2016-11-07 2018-09-16 日商Ｈｏｙａ股份有限公司 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法

Also Published As

Publication number Publication date
JP2021196515A (ja) 2021-12-27
CN113805428A (zh) 2021-12-17
JP7475209B2 (ja) 2024-04-26
CN113805428B (zh) 2024-07-02
KR102618940B1 (ko) 2023-12-29
TW202201119A (zh) 2022-01-01
KR20210155361A (ko) 2021-12-22

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