TWI787852B - 接近式曝光用光掩模 - Google Patents
接近式曝光用光掩模 Download PDFInfo
- Publication number
- TWI787852B TWI787852B TW110119984A TW110119984A TWI787852B TW I787852 B TWI787852 B TW I787852B TW 110119984 A TW110119984 A TW 110119984A TW 110119984 A TW110119984 A TW 110119984A TW I787852 B TWI787852 B TW I787852B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- auxiliary pattern
- auxiliary
- exposure
- photomask
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-103242 | 2020-06-15 | ||
JP2020103242A JP7475209B2 (ja) | 2020-06-15 | 2020-06-15 | プロキシミティー露光用フォトマスク |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202201119A TW202201119A (zh) | 2022-01-01 |
TWI787852B true TWI787852B (zh) | 2022-12-21 |
Family
ID=78942434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110119984A TWI787852B (zh) | 2020-06-15 | 2021-06-02 | 接近式曝光用光掩模 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7475209B2 (ko) |
KR (1) | KR102618940B1 (ko) |
CN (1) | CN113805428B (ko) |
TW (1) | TWI787852B (ko) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1936702A (zh) * | 2005-09-23 | 2007-03-28 | 联华电子股份有限公司 | 光学邻近校正光掩模及彩色滤光片的制造方法 |
US7568179B1 (en) * | 2006-09-21 | 2009-07-28 | Armen Kroyan | Layout printability optimization method and system |
CN104281000A (zh) * | 2014-10-23 | 2015-01-14 | 京东方科技集团股份有限公司 | 一种掩膜板 |
TW201531794A (zh) * | 2014-06-17 | 2015-08-16 | Sk Electronics Co Ltd | 近接式曝光用光罩 |
TW201833659A (zh) * | 2016-11-07 | 2018-09-16 | 日商Hoya股份有限公司 | 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60128447A (ja) * | 1983-12-14 | 1985-07-09 | Fujitsu Ltd | フオトマスク |
JP2003233164A (ja) * | 2002-02-12 | 2003-08-22 | Fujitsu Ltd | フォトマスク及びその製造方法 |
JP2004085612A (ja) * | 2002-08-22 | 2004-03-18 | Matsushita Electric Ind Co Ltd | ハーフトーン位相シフトマスク、その製造方法およびそれを用いたパターン形成方法 |
KR20060077296A (ko) * | 2004-12-30 | 2006-07-05 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치의 돌기 형성 방법 및 이를 이용한 액정표시 장치의 제조 방법 |
JP4389222B2 (ja) | 2005-05-02 | 2009-12-24 | エルピーダメモリ株式会社 | マスクデータ作成方法 |
KR20070073244A (ko) * | 2006-01-04 | 2007-07-10 | 주식회사 에스앤에스텍 | 그레이톤 블랭크마스크 및 포토마스크 제조방법 |
JP4992363B2 (ja) | 2006-09-25 | 2012-08-08 | 凸版印刷株式会社 | 硬化パターンの製造方法 |
JP5160286B2 (ja) * | 2008-04-15 | 2013-03-13 | Hoya株式会社 | 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法 |
JP2010044149A (ja) * | 2008-08-11 | 2010-02-25 | Hoya Corp | 多階調フォトマスク、パターン転写方法及び多階調フォトマスクを用いた表示装置の製造方法 |
JP5381051B2 (ja) * | 2008-12-01 | 2014-01-08 | 大日本印刷株式会社 | マルチスペクトルマスクおよびカラーフィルタの製造方法 |
KR20100080151A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 마스크 설계 방법, 이를 이용한 마스크 패턴 및 그의 제조방법 |
KR101096249B1 (ko) * | 2009-05-29 | 2011-12-22 | 주식회사 하이닉스반도체 | 마스크 및 제조 방법 |
JP2011123111A (ja) * | 2009-12-08 | 2011-06-23 | Sharp Corp | カラーフィルター形成方法およびそれを用いた固体撮像装置の製造方法 |
CN102109714B (zh) * | 2009-12-25 | 2016-03-09 | 北京京东方光电科技有限公司 | 取向层及其制备方法、包括该取向层的液晶显示装置 |
WO2013094756A1 (ja) | 2011-12-21 | 2013-06-27 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
JP6081716B2 (ja) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法 |
JP6118996B2 (ja) | 2013-02-22 | 2017-04-26 | パナソニックIpマネジメント株式会社 | フォトマスク、並びにフォトマスクを用いたパターン形成方法及び加工方法 |
JP6522277B2 (ja) * | 2013-11-19 | 2019-05-29 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
CN105824189B (zh) * | 2016-06-08 | 2020-01-07 | 京东方科技集团股份有限公司 | 掩模板和基板间隔柱及其制备方法、显示面板 |
JP2017072842A (ja) * | 2016-11-09 | 2017-04-13 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
JP6463536B1 (ja) * | 2018-05-09 | 2019-02-06 | 株式会社エスケーエレクトロニクス | プロキシミティ露光用フォトマスクとその製造方法 |
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2020
- 2020-06-15 JP JP2020103242A patent/JP7475209B2/ja active Active
-
2021
- 2021-06-02 TW TW110119984A patent/TWI787852B/zh active
- 2021-06-03 CN CN202110618642.8A patent/CN113805428B/zh active Active
- 2021-06-08 KR KR1020210073849A patent/KR102618940B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1936702A (zh) * | 2005-09-23 | 2007-03-28 | 联华电子股份有限公司 | 光学邻近校正光掩模及彩色滤光片的制造方法 |
US7568179B1 (en) * | 2006-09-21 | 2009-07-28 | Armen Kroyan | Layout printability optimization method and system |
TW201531794A (zh) * | 2014-06-17 | 2015-08-16 | Sk Electronics Co Ltd | 近接式曝光用光罩 |
CN104281000A (zh) * | 2014-10-23 | 2015-01-14 | 京东方科技集团股份有限公司 | 一种掩膜板 |
TW201833659A (zh) * | 2016-11-07 | 2018-09-16 | 日商Hoya股份有限公司 | 光罩、近接曝光用光罩之製造方法及顯示裝置之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2021196515A (ja) | 2021-12-27 |
CN113805428A (zh) | 2021-12-17 |
JP7475209B2 (ja) | 2024-04-26 |
CN113805428B (zh) | 2024-07-02 |
KR102618940B1 (ko) | 2023-12-29 |
TW202201119A (zh) | 2022-01-01 |
KR20210155361A (ko) | 2021-12-22 |
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