TWI785138B - 安裝結構體之製造方法及使用於其之片材 - Google Patents

安裝結構體之製造方法及使用於其之片材 Download PDF

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TWI785138B
TWI785138B TW107138585A TW107138585A TWI785138B TW I785138 B TWI785138 B TW I785138B TW 107138585 A TW107138585 A TW 107138585A TW 107138585 A TW107138585 A TW 107138585A TW I785138 B TWI785138 B TW I785138B
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circuit member
aforementioned
sheet
circuit
layer
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TW107138585A
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TW201923916A (zh
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橋本卓幸
石橋卓也
西村和樹
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日商長瀨化成股份有限公司
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Abstract

一種安裝結構體之製造方法，具備以下步驟：安裝構件準備步驟，係準備安裝構件，且前述安裝構件具備第1電路構件及透過凸塊搭載於前述第1電路構件的複數個第2電路構件，同時於前述第1電路構件與前述第2電路構件間形成有空間；片材準備步驟，係準備具備空間維持層的片材；配置步驟，係以前述空間維持層面對前述第2電路構件之方式，將前述片材配置於前述安裝構件；及密封步驟，係朝前述第1電路構件按壓前述片材並同時加熱前述片材，一邊維持前述空間一邊密封前述第2電路構件來使前述片材硬化；又，前述凸塊為焊料凸塊，硬化後的前述空間維持層之玻璃轉移溫度大於125℃，且於125℃以下之線膨脹係數為20ppm/K以下。

Description

安裝結構體之製造方法及使用於其之片材
發明領域 本發明是有關於一種於內部具備空間的安裝結構體之製造方法，詳而言之，關於一種使用片材來密封的安裝結構體之製造方法及使用於其之片材。
背景技術 搭載於電路基板的電子零件(電路構件)有時在與電路基板間必須具有空間(內部空間)。舉例言之，用以除去行動電話等之雜訊的SAW晶片是利用於壓電基板(壓電體)上傳播的表面波而過濾所期望之頻率，因此，於壓電體上的電極與搭載SAW晶片的電路基板間必須具有內部空間。內部空間例如藉由將SAW晶片等電路構件透過凸塊搭載於電路基板而形成，以容納電路構件之機能面。此種必須具有內部空間的電路構件之密封有時會使用樹脂片(例如專利文獻1)。
先前技術文獻 專利文獻 專利文獻1：日本特開2015-65368號公報
發明概要 發明欲解決之課題 在製造安裝結構體時，密封材(已硬化的樹脂片)可能因熱而膨脹。如此一來，密著於密封材的電路構件會朝密封材膨脹的方向拉伸。另一方面，若密封材冷卻，則電路構件會朝密封材收縮的方向拉伸。電路構件本身不易變形，因此，施加於電路構件的拉伸應力會作用在被配置於內部空間的凸塊，使凸塊欲自電路基板剝離。若凸塊是由焊料形成的情況下，藉由該應力，凸塊有時會自電路基板剝離。又，於實際使用安裝結構體時，隨著外部環境或自發熱等所致溫度變化，會有密封材反覆熱膨脹及收縮的情形。此時，焊料凸塊亦會朝密封材膨脹及/或收縮的方向反覆拉伸，因此容易損傷。
用以解決課題之手段 有鑑於上述，本發明之一態樣是有關於一種安裝結構體之製造方法，具備以下步驟：安裝構件準備步驟，係準備安裝構件，且前述安裝構件具備第1電路構件及透過凸塊搭載於前述第1電路構件的複數個第2電路構件，同時於前述第1電路構件與前述第2電路構件間形成有空間；片材準備步驟，係準備具備空間維持層的片材；配置步驟，係以前述空間維持層面對前述第2電路構件之方式，將前述片材配置於前述安裝構件；及密封步驟，係朝前述第1電路構件按壓前述片材並同時加熱前述片材，一邊維持前述空間一邊密封前述第2電路構件來使前述片材硬化；又，前述凸塊為焊料凸塊，硬化後的前述空間維持層之玻璃轉移溫度大於125℃，且於125℃以下之線膨脹係數為20ppm/K以下。
本發明之其他態樣是有關於一種片材，用以密封安裝構件，該安裝構件具備第1電路構件及透過焊料凸塊搭載於前述第1電路構件的複數個第2電路構件，同時於前述第1電路構件與前述第2電路構件間形成有空間，前述片材具備空間維持層，硬化後的前述空間維持層之玻璃轉移溫度大於125℃，且於125℃以下之線膨脹係數為20ppm/K以下。
發明效果 依據本發明，在具備第1電路構件及第2電路構件且於第1電路構件與第2電路構件間具有空間的安裝結構體中，可提升第1電路構件與搭載於其的第2電路構件之連接可靠性。
用以實施發明之形態 圖1中顯示藉由本實施形態之方法所製造安裝結構體之一例。圖1為示意顯示安裝結構體10之截面圖。 安裝結構體10具備：第1電路構件1；複數個第2電路構件2，其透過焊料凸塊3搭載於第1電路構件1；及密封材4，其用以密封第2電路構件2。於第1電路構件1與第2電路構件2間形成有空間(內部空間S)。密封材4為片材4P(參照圖2)之硬化物。本發明包含該片材4P。
[片材] 片材4P為一邊維持內部空間S一邊密封第2電路構件2的構件。如圖2所示，片材4P至少具備空間維持層41P。圖2為示意顯示片材4P之截面圖。
(空間維持層) 空間維持層41P為以下層體：於配置步驟中以面對第2電路構件2之方式配置，並密著於第2電路構件2，同時於密封步驟中維持內部空間S。
硬化後的空間維持層(以下，硬化空間維持層41)之玻璃轉移溫度大於125℃。再者，硬化空間維持層41於125℃以下之線膨脹係數為20ppm/K以下。
線膨脹係數可根據JIS K 7197，藉由熱機械分析裝置進行測定。線膨脹係數例如針對2mm×5mm×20mm之試驗片，使用熱機械分析裝置(例如日立先端科技(Hitachi High-Tech Science)股份有限公司製造，TMA7100)，於壓縮模式、升溫速度2.5℃/分、負載49mN之條件下進行測定。
安裝結構體10是假設實際使用情況，而於熱循環試驗中，有時會要求在-55℃~125℃等廣大溫度範圍內的耐久性。此時，亦藉由使硬化空間維持層41之玻璃轉移溫度及線膨脹係數滿足上述範圍，可抑制硬化空間維持層41之變形或膨脹。依此，藉由硬化空間維持層41，可抑制內部空間S之膨脹，並抑制焊料凸塊3隨著內部空間S之膨脹而自第1電路構件1剝離。
再者，硬化空間維持層41於125℃以下之線膨脹係數為20ppm/K以下，因此，於熱循環試驗中硬化空間維持層41之膨脹與焊料凸塊3之膨脹相同程度或是小於此。故，可抑制焊料凸塊3之變形，並抑制焊料凸塊3之損傷。特別是在-55℃~125℃中，硬化空間維持層41之線膨脹係數宜為20ppm/K以下。上述硬化空間維持層41之線膨脹係數為-55℃~125℃的平均線膨脹係數。
又，當內部空間存在有水分時，水會因熱而構成水蒸氣，且內部空間膨脹。若凸塊無法承受內部空間之膨脹，則凸塊會產生裂紋(所謂爆米花現象)。上述裂紋特別是在使用焊料凸塊時容易產生。然而，若藉由本實施形態，則可抑制內部空間S之膨脹，因此，亦可抑制焊料凸塊3的上述裂紋之產生。
於第2電路構件2被密封時的溫度t下之空間維持層41P之損耗正切tanδ1t 宜為1以下，較為理想的是0.9以下，特別理想的是0.7以下。損耗正切tanδ1t 之下限並無特殊限制，例如為0.1。具有此種損耗正切tanδ1t 的空間維持層41P可單獨一邊維持內部空間S，一邊密封第2電路構件2。依此，即使片材4P具備損耗正切tanδt 大(黏性高)的其他層體，亦可維持內部空間S。
第2電路構件2被密封時的溫度t是在維持內部空間S的狀態下藉由片材4P覆蓋第2電路構件2之表面時的片材4P之溫度。片材4P之溫度可替代成密封步驟中對片材4P的加熱機構之設定溫度。當片材4P之加熱機構為壓機時，加熱機構之溫度為壓機之設定溫度。當片材4P之加熱機構為加熱第1電路構件1的加熱機時，加熱機構之溫度為第1電路構件1的加熱機之設定溫度。溫度t可依照片材4P之材質等來變更，例如為室溫+15℃(40℃)至200℃之間。具體而言，溫度t例如為50~180℃。第2電路構件2密封時，片材4P可為未硬化狀態，亦可為半硬化狀態。
損耗正切tanδ1t 為溫度t下之空間維持層41P之損耗剪切彈性模數(G1”)相對於儲存剪切彈性模數G1’的比：G1”/G1’。儲存剪切彈性模數G1’及損耗剪切彈性模數G1”例如儲存剪切彈性模數G1’及損耗剪切彈性模數G1”針對直徑8mm×1mm之試驗片，使用黏彈性測定裝置(例如TA儀器公司製造，ARES-LS2)，於頻率1Hz、升溫速度10℃/分之條件下測定。後述儲存剪切彈性模數G2’及損耗正切tanδ2亦同樣地來求取。黏彈性測定裝置可使用根據JIS K 7244的裝置。
於溫度t下之儲存剪切彈性模數G1’宜為1.0×107 Pa以下，較為理想的是1.0×106 Pa以下。儲存剪切彈性模數G1’之下限並無特殊限制，例如為1.0×104 Pa。若於溫度t下之儲存剪切彈性模數G1’為該範圍，則可抑制空間維持層41P於密封步驟中侵入內部空間S，同時可輕易地以可密著於第2電路構件2之表面及第2電路構件2彼此間的第1電路構件1之表面的程度來流動。
若由絕緣性之觀點來看，則空間維持層41P之體積電阻率宜為1×108 Ω．cm以上，較為理想的是1×1010 Ω．cm以上。
空間維持層41P之厚度T1並無特殊限制。厚度T1可為120μm以下，亦可為100μm以下，也可以是80μm以下。藉此，可構成矮版化。另一方面，若由容易抑制內部空間S之膨脹之觀點來看，則宜為1μm以上，較為理想的是10μm以上。空間維持層41P之厚度T1為空間維持層41P之主面間的距離。主面間的距離可平均任意10處的距離來求取。
空間維持層41P例如藉由含有熱硬化性樹脂及硬化劑的樹脂組成物(以下稱作第1樹脂組成物)構成。
熱硬化性樹脂並無特殊限制，可舉例如：環氧樹脂、(甲基)丙烯酸樹脂、酚樹脂、三聚氰胺樹脂、聚矽氧樹脂、脲樹脂、胺甲酸乙酯樹脂、乙烯酯樹脂、不飽和聚酯樹脂、二烯丙基酞酸酯樹脂、聚醯亞胺樹脂等。該等可單獨使用1種，亦可組合2種以上使用。其中，宜為環氧樹脂。
密封前的熱硬化性樹脂可為未硬化狀態，亦可為半硬化狀態。半硬化狀態意指熱硬化性樹脂含有單體及/或低聚物的狀態，且為熱硬化性樹脂之三維交聯結構之發展不足的狀態。半硬化狀態的熱硬化性樹脂含有於室溫(25℃)下不會溶解於溶劑中或是不會溶解的成分，硬化呈現不完全之狀態，所謂B階段。
環氧樹脂並無特殊限制，例如可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、加氫雙酚A型環氧樹脂、加氫雙酚F型環氧樹脂、苯酚酚醛型環氧樹脂、萘型環氧樹脂、脂環式脂肪族環氧樹脂、有機羧酸類之環氧丙基醚等。該等可單獨使用，亦可組合2種以上使用。環氧樹脂可為預聚合物，亦可為像是聚醚改質環氧樹脂、聚矽氧改質環氧樹脂般環氧樹脂與其他聚合物之共聚物。其中，宜為雙酚AD型環氧樹脂、萘型環氧樹脂、雙酚A型環氧樹脂及/或雙酚F型環氧樹脂。特別是若由耐熱性及耐水性優異且廉價之觀點來看，則宜為雙酚A型環氧樹脂、雙酚F型環氧樹脂。
為了樹脂組成物之黏度調節，環氧樹脂可相對於環氧樹脂全體，含有於分子中具有1個環氧基的單官能環氧樹脂0.1~30質量%左右。此種單官能環氧樹脂可使用苯基環氧丙基醚、2-乙基己基環氧丙基醚、乙基二乙二醇環氧丙基醚、二環戊二烯環氧丙基醚、2-羥乙基環氧丙基醚等。該等可單獨使用，亦可組合2種以上使用。
樹脂組成物含有熱硬化性樹脂之硬化劑。硬化劑並無特殊限制，例如可使用酚系硬化劑(酚樹脂等)、二氰二胺系硬化劑(二氰二胺等)、脲系硬化劑、有機酸醯肼系硬化劑、聚胺鹽系硬化劑、胺加成物系硬化劑、酸酐系硬化劑、咪唑系硬化劑等。該等可單獨使用1種，亦可組合2種以上使用。硬化劑之種類可依照熱硬化性樹脂適當地選擇。其中，若由硬化時的低排氣性、耐濕性、耐熱循環性等觀點來看，則宜使用酚系硬化劑。
硬化劑量依照硬化劑之種類而不同。當使用環氧樹脂時，舉例言之，宜使用構成下述量的硬化劑：環氧基每1當量，硬化劑的官能基當量數構成0.001~2當量，進而為0.005~1.5當量。
另，二氰二胺系硬化劑、脲系硬化劑、有機酸醯肼系硬化劑、聚胺鹽系硬化劑、胺加成物系硬化劑為潛在性硬化劑。潛在性硬化劑之活性溫度宜為60℃以上，進而為80℃以上。又，活性溫度宜為250℃以下，進而為180℃以下。藉此，可製得於活性溫度以上迅速硬化的樹脂組成物。
樹脂組成物亦可含有上述以外的第三成分。第三成分可舉例如：熱塑性樹脂、無機填充劑、硬化促進劑、聚合引發劑、離子捕集劑、阻燃劑、顏料、矽烷耦合劑、觸變性賦予劑等。
熱塑性樹脂可摻合作為片材化劑。藉由使樹脂組成物片材化，可提升密封步驟中的處理性，同時抑制樹脂組成物之下垂等而輕易地維持內部空間S。
熱塑性樹脂之種類例如可列舉：丙烯酸樹脂、苯氧樹脂、聚烯烴、聚胺甲酸乙酯、封閉異氰酸酯、聚醚、聚酯、聚醯亞胺、聚乙烯醇、丁醛樹脂、聚醯胺、氯乙烯、纖維素、熱塑性環氧樹脂、熱塑性酚樹脂等。其中，若由作為片材化劑之機能優異之觀點來看，則宜為丙烯酸樹脂。熱塑性樹脂量宜為熱硬化性樹脂每100質量份而為5~200質量份，特別理想的是10~100質量份。
添加於樹脂組成物時的熱塑性樹脂之形態並無特殊限制。熱塑性樹脂例如可為重量平均粒徑0.01~200μm，理想的是0.01~100μm之粒子。上述粒子亦可具有核殼結構。此時，核例如可為含有來自選自於由正-、異-及三級-丁基(甲基)丙烯酸酯所構成群組中之至少一種單體之單元的聚合物，亦可為含有來自其他(甲基)丙烯酸酯之單元的聚合物。殼層例如可為甲基(甲基)丙烯酸酯、正-、異-或三級-丁基(甲基)丙烯酸酯、(甲基)丙烯酸等單官能單體與1,6-己二醇二丙烯酸酯等多官能單體的共聚物。又，亦可於樹脂組成物中添加已分散或溶解於溶劑中的高純度熱塑性樹脂。
可包含於樹脂組成物中的無機填充劑例如可列舉：熔融二氧化矽等二氧化矽、滑石、碳酸鈣、鈦白、鐵紅、碳化矽、氮化硼(BN)等。其中，若由廉價之觀點來看，則宜為熔融二氧化矽。無機填充劑之平均粒徑例如為0.01~100μm。無機填充劑量宜為熱硬化性樹脂每100質量份而為1~5000質量份，較為理想的是10~3000質量份。平均粒徑為體積粒度分布的累積體積50%之粒徑(D50，以下相同)。
硬化促進劑並無特殊限制，可舉例如：改質咪唑系硬化促進劑、改質脂肪族聚胺系促進劑、改質聚胺系促進劑等。硬化促進劑宜使用作為與環氧樹脂等樹脂之反應生成物(加成物)。該等可單獨使用，亦可組合2種以上使用。若由保存安定性之觀點來看，則硬化促進劑之活性溫度宜為60℃以上，進而為80℃以上。又，活性溫度宜為250℃以下，進而為180℃以下。在此，活性溫度為可藉由潛在性硬化劑及/或硬化促進劑之作用使熱硬化性樹脂之硬化急速加快的溫度。
硬化促進劑量依照硬化促進劑之種類而不同。通常環氧樹脂每100質量份，宜為0.1~20質量份，較為理想的是1~10質量份。另，當使用硬化促進劑作為加成物時，硬化促進劑量意味著硬化促進劑以外的成分(環氧樹脂等)除外的硬化促進劑之實際量。
聚合引發劑是藉由光照射及/或加熱而顯現硬化性。聚合引發劑可使用自由基產生劑、酸產生劑、鹼產生劑等。具體而言，可使用二苯基酮系化合物、羥基酮系化合物、偶氮化合物、有機過氧化物、芳香族鋶鹽、脂肪族鋶鹽等鋶鹽等。聚合引發劑量宜為環氧樹脂每100質量份而為0.1~20質量份，較為理想的是1~10質量份。
(應力緩和層) 片材4P更宜具備應力緩和層42P。藉由已硬化的應力緩和層(以下稱作硬化應力緩和層42)，可緩和於製造步驟等中施加於安裝結構體10的應力(內部應力)，並抑制安裝結構體10之翹曲等。特別是安裝結構體10藉由具備硬化空間維持層41的密封材4來密封，因此容易產生翹曲。又，當第1電路構件1含有陶瓷基板時，欲矯正翹曲是困難的。依此，宜設置硬化應力緩和層42，緩和硬化空間維持層41或陶瓷基板之內部應力。
硬化應力緩和層42之損耗正切tanδ2於玻璃轉移溫度以下的溫度範圍中，在40℃以上宜為0.02以上，在35℃以上亦宜為0.02以上，且在25℃以上亦宜為0.02以上。藉此，於製造後安裝結構體冷卻至常溫(20~30℃)時，可緩和上述應力而容易消除翹曲。硬化應力緩和層42之損耗正切tanδ2於玻璃轉移溫度以下的溫度範圍中，在40℃以上亦可為0.05以上，在35℃以上亦可為0.05以上，在25℃以上亦可為0.05以上。
硬化應力緩和層42於40℃以上且玻璃轉移溫度以下的溫度範圍中之損耗正切tanδ2例如為3以下，且為1.5以下，並為0.5以下。
又，舉例言之，於25℃以上且玻璃轉移溫度以下的溫度範圍中，硬化應力緩和層42之損耗正切tanδ2亦可大於硬化空間維持層41之損耗正切tanδ1。
另一方面，硬化應力緩和層42之玻璃轉移溫度並無特殊限制。其中，硬化應力緩和層42之玻璃轉移溫度宜為125℃以下。此時，於125℃以下的溫度下之損耗正切tanδ2容易變大。
應力緩和層42P於溫度t下之損耗正切tanδ2t 宜大於0.3，且宜大於0.4。損耗正切tanδ2t 之上限並無特殊限制，例如為8。又，應力緩和層42P之損耗正切tanδ2t 亦可大於空間維持層41P之損耗正切tanδ1t 。
於溫度t下之應力緩和層42P之儲存剪切彈性模數G2’宜為1×103 Pa以上，較為理想的是1×104 Pa以上。藉此，於第2電路構件2密封後，容易緩和第1電路構件1或第2電路構件2以及硬化空間維持層41內在的應力(內部應力)。儲存剪切彈性模數G2’之上限並無特殊限制，例如為1×107 Pa，較為理想的是1×106 Pa。
應力緩和層42P藉由含有熱硬化性樹脂及硬化劑的樹脂組成物(以下稱作第2樹脂組成物)構成。第2樹脂組成物之構造並無特殊限制，可為與第1樹脂組成物相同的構造。其中，若由蠕動變形變大之觀點來看，則宜含有含橡膠成分等的環氧樹脂(例如橡膠改質環氧樹脂)等。
黏彈性(亦即損耗正切tanδ)例如可藉由空間維持層41P及/或應力緩和層42P之原料來調整。舉例言之，藉由變更屬於片材化劑的熱塑性樹脂量或種類，可改變損耗正切tanδ。其中，若使用苯氧樹脂，則可輕易地減小儲存剪切彈性模數G2’而加大tanδ2。包含於第2樹脂組成物的熱塑性樹脂量宜為熱硬化性樹脂每100質量份而為5~200質量份，較為理想的是10~100質量份。
若由應力緩和之觀點來看，則應力緩和層42P之厚度T2宜為10μm以上，較為理想的是50μm以上。此時，容易使安裝結構體10之密封面平坦化，且容易將安裝結構體10進行切割。另一方面，若由矮版化之觀點來看，則應力緩和層42P之厚度T2宜為1400μm以下，較為理想的是420μm以下。應力緩和層42P之體積電阻率並無特殊限制，例如可與空間維持層41P相同程度，亦可小於空間維持層41P。
片材4P全體之厚度T並無特殊限制，若由容易密著於第2電路構件2之表面之觀點來看，則宜為11~1500μm，較為理想的是20~1000μm，特別理想的是20~500μm。
片材4P亦可進一步地具備其他第3層。不過，將空間維持層41P配置於一側之最外側。應力緩和層42P之配置並無特殊限制，宜與空間維持層41P鄰接而配置。即，當具備第3層時，應力緩和層42P宜配置於內部。第3層可為單層，亦可為複數層的積層體。
[安裝結構體之製造方法] 參照圖3，說明本實施形態之製造方法。圖3為藉由安裝構件或安裝結構體10之截面示意顯示本實施形態之製造方法的說明圖。
安裝結構體10可藉由具備以下步驟的方法來製造：第1準備步驟，其準備安裝構件，且前述安裝構件具備第1電路構件1及透過焊料凸塊3搭載於第1電路構件1的複數個第2電路構件2，同時於第1電路構件1與第2電路構件2間形成有內部空間S；第2準備步驟，其準備片材4P；配置步驟，其以片材4P之空間維持層41P面對第2電路構件2之方式，將片材4P配置於安裝構件；及密封步驟，其朝第1電路構件1按壓片材4P，同時加熱片材4P而一邊維持內部空間S，一邊密封第2電路構件2，且使片材4P硬化。再者，亦可進行將所製得安裝結構體10按每個第2電路構件2進行切割的單片化步驟。
(第1準備步驟) 準備安裝構件，該安裝構件具備第1電路構件1及透過焊料凸塊3搭載於第1電路構件1的複數個第2電路構件2，同時於第1電路構件1與第2電路構件2間形成有內部空間S(圖3(a))。
第1電路構件1例如為選自於由半導體元件、半導體封裝體、玻璃基板、樹脂基板、陶瓷基板及矽基板所構成群組之至少1種。該等第1電路構件亦可於其表面形成有像是ACF(各向異性導電膜)或ACP(各向異性導電糊劑)的導電材料層。樹脂基板可為剛性樹脂基板，亦可為撓性樹脂基板，例如可列舉：環氧樹脂基板(例如玻璃環氧基板)、雙馬來醯亞胺三
Figure 107138585-A0304-12-0020-4
基板、聚醯亞胺樹脂基板、氟樹脂基板等。第1電路構件1亦可為於內部具備半導體晶片等的零件內建基板。
第2電路構件2透過焊料凸塊3搭載於第1電路構件1。藉此，於第1電路構件1與第2電路構件2間可形成內部空間S。第2電路構件2為必須在維持該內部空間S的狀態下密封(中空密封)的電子零件。第2電路構件2例如可列舉：RFIC、SAW、感測器晶片(加速度感測器等)、壓電振動子晶片、水晶振動子晶片、MEMS元件等。
即，安裝構件可具有各種第1電路構件1上搭載有第2電路構件2的晶片接合基板(Chip on Board，CoB)結構(包含晶片接合晶圓(Chip on Wafer，CoW)、晶片接合軟膜(Chip on Film，CoF)、晶片接合玻璃(Chip on Glass，CoG))、晶片接合晶片(Chip on Chip，CoC)結構、晶片接合封裝體(Chip on Package，CoP)結構及封裝體接合封裝體(Package on Package，PoP)結構。安裝構件亦可為像是在搭載有第2電路構件2的第1電路構件1上更積層第1電路構件1及/或第2電路構件2的多層安裝構件。
焊料凸塊3具有導電性，第1電路構件1與第2電路構件2透過焊料凸塊3電連接。焊料凸塊3之高度並無特殊限制，例如可為10~150μm，亦可為40~70μm。焊料凸塊3之組成亦無特殊限制。舉例言之，可為含有鉛作為主成分的焊料，亦可為含有錫作為主成分的無鉛焊料。焊料凸塊3除了鉛、錫以外，例如可含有鋅、銻、銦、銀、鉍、銅、鋁等。焊料凸塊3之材料具體可舉例如：鉛-錫、錫-銀-銅、錫-鋅-鋁、錫-鉍-銀等合金。
(第2準備步驟) 準備片材4P，其具備空間維持層41P及視需要之應力緩和層42P(圖3(a))。 當片材4P具備複數層時，其製造方法並無特殊限制。片材4P可於另外作成各層後藉由積層(層壓法)來形成，亦可藉由依序塗佈各層之材料(塗佈法)來形成。
於層壓法中，各層例如可藉由包含以下步驟的方法來形成：分別調製含有上述樹脂組成物的溶劑糊劑或無溶劑糊劑(以下僅統稱為糊劑)的步驟；及由上述糊劑形成各層的步驟(形成步驟)。藉由該方法分別形成空間維持層41P及應力緩和層42P後，依序進行積層。當糊劑含有預凝膠化劑時，於形成步驟時進行凝膠化。凝膠化是依下述來進行：在將糊劑薄膜化後，將薄膜以小於熱硬化性樹脂之硬化溫度(例如70~150℃)加熱1~10分鐘。
另一方面，於塗佈法中，在藉由上述方法形成例如空間維持層41P後，於該空間維持層41P之表面塗佈含有第2樹脂組成物的糊劑而形成應力緩和層42P。此時，亦可於形成步驟時進行凝膠化。凝膠化可於由各糊劑形成各個薄膜後逐次實施，亦可於形成薄膜之積層體後實施。
各層(薄膜)例如藉由模具、輥塗機、刮刀片等來形成。此時，宜將糊劑之黏度調整為10~10000mPa．s。當使用溶劑糊劑時，後續可進行70~150℃、1~10分鐘乾燥而除去溶劑。上述凝膠化與溶劑之除去可同時實施。
(配置步驟) 以空間維持層41P面對第2電路構件2之方式，將片材4P配置於安裝構件(圖3(a))。 此時，可藉由一片片材4P覆蓋複數個第2電路構件2。藉此，可將片材4P整體配置成面對複數個第2電路構件2之表面及第2電路構件2彼此間的第1電路構件1之表面。
(密封步驟) 朝第1電路構件1按壓片材4P(圖3(b))，同時加熱片材4P而使其硬化(圖3(c))。藉此，可一邊維持內部空間S，一邊密封第2電路構件2。
片材4P朝第1電路構件1的按壓例如可將片材4P以小於包含於片材4P的熱硬化性樹脂之硬化溫度一邊加熱一邊進行(熱壓)。藉此，片材4P可輕易地密著於第2電路構件2之表面，同時伸展至到達第2電路構件2彼此間的第1電路構件1之表面，並提高第2電路構件2之密封可靠性。熱壓可於大氣壓下進行，亦可於減壓環境氣體(例如50Pa以上、50,000Pa以下，理想的是50Pa以上、3,000Pa以下)下進行。按壓時的加熱條件並無特殊限制，可依照按壓方法或熱硬化性樹脂之種類適當地設定。上述加熱例如以40~200℃(理想的是50~180℃)進行1秒~300分鐘(理想的是3秒~300分鐘)。
若以上述硬化溫度加熱片材4P而使熱硬化性樹脂硬化，則可形成密封材4。藉此，可密封第2電路構件2。片材4P之加熱(熱硬化性樹脂之硬化)條件可依照熱硬化性樹脂之種類適當地設定。熱硬化性樹脂之硬化例如以50~200℃(理想的是120~180℃)進行1秒~300分鐘(理想的是60分~300分鐘)。
熱壓與熱硬化性樹脂之硬化可分別實施，亦可同時實施。舉例言之，可於減壓環境氣體下，以小於包含於片材4P的熱硬化性樹脂之硬化溫度進行熱壓後，解除減壓，並於大氣壓下再以高溫加熱而使熱硬化性樹脂硬化。或者可於大氣壓下，以小於包含於片材4P的熱硬化性樹脂之硬化溫度進行熱壓後，再以高溫加熱而使熱硬化性樹脂硬化。又，亦可於減壓環境氣體下，以硬化溫度進行熱壓，藉此，於減壓中使熱硬化性樹脂硬化。
(單片化步驟) 亦可進行將所製得安裝結構體10按每個第2電路構件2進行切割的單片化步驟(圖3(d))。藉此，可製得晶片層級的安裝結構體(安裝晶片20)。
[實施例] 其次，根據實施例，更具體地說明本發明。不過，以下實施例並非限制本發明。
[實施例1] (1)樹脂組成物之調製 使用下述材料，調製具有表1所記載組成的樹脂組成物A~H。表中顯示組成的數值為質量份。
＜熱硬化性樹脂＞ Ep：環氧樹脂(環氧當量183g/eq)
＜硬化劑＞ Hd-A：苯酚酚醛樹脂A(羥基當量173g/eq) Hd-B：苯酚酚醛樹脂B(環氧當量105g/eq) Hd-C：苯酚酚醛樹脂C(環氧當量143g/eq)
＜熱塑性樹脂＞ AcR：丙烯酸樹脂 PhR：苯氧樹脂
＜硬化促進劑＞ IMZ：咪唑
＜無機填充劑＞ s-SiL：熔融球狀二氧化矽
[表1]
Figure 107138585-A0304-0001
[評價1] ＜儲存剪切彈性模數與tanδt ＞ 將樹脂組成物A~H分別塗覆於PET膜，並以100℃加熱5分鐘，製作出厚度1mm的未硬化片。自所製得未硬化片作成直徑8mm×1mm之試驗片，並根據JIS K 7244，求取於第2電路構件2密封時的溫度t(80℃或100℃)下之儲存剪切彈性模數G’及損耗剪切彈性模數G”，並求取於溫度t下之損耗正切tanδt (G”/G’)。另，黏彈性測定裝置使用ARES-LS2(TA儀器公司製造)，並於頻率1Hz、升溫速度10℃/分之條件下測定。表2中顯示結果。
＜玻璃轉移溫度(Tg)＞ 將樹脂組成物A~H分別塗覆於PET膜，並以150℃加熱180分鐘而使熱硬化性樹脂硬化，製得厚度1mm的硬化片。自所製得硬化片作成直徑8mm×1mm之試驗片，並藉由與上述評價1相同的條件，求取於-55℃至125℃中儲存剪切彈性模數G’及損耗剪切彈性模數G”，並求取損耗正切tanδ(G”/G’)顯示最大值的溫度作為玻璃轉移溫度。表2中顯示結果。
＜tanδ2＞ 針對使用作為應力緩和層的樹脂組成物之硬化片，求取於40℃以上且Tg以下的溫度範圍中之損耗正切tanδ2之最小值。表2中顯示結果。
＜線膨脹係數＞ 將樹脂組成物A~H以150℃加熱180分鐘，製得塊狀之熱硬化性樹脂硬化物。自塊狀硬化物作成2mm×5mm×20mm之試驗片，並根據JIS K 7197，求取於-55℃至125℃中之線膨脹係數之平均值。熱機械分析裝置使用TMA7100(日立先端科技(Hitachi High-Tech Science)股份有限公司製造)，並於壓縮模式、升溫速度2.5℃/分、負載49mN之條件下測定。表2中顯示結果。
(2)片材4P之製作 使用樹脂組成物A~H，並以表2中記載的空間維持層(41P)與應力緩和層(42P)之組合，分別藉由塗佈法形成實施例之片材4P-X1、4P-X2、4P-X3及4P-X4與比較例之4P-R1及4P-R2。空間維持層(41P)之厚度設為100μm，應力緩和層(42P)之厚度則設為200μm。
[表2]
Figure 107138585-A0304-0002
(3)安裝結構體之製作 透過金凸塊(直徑100μm、高度20μm)，於玻璃基板(第1電路構件1、50mm見方、厚度0.2mm)上排列、搭載3個同型的SAW晶片(第2電路構件2、1.1mm×1.1mm、高度0.2mm)，藉此製得安裝構件。SAW晶片間之間隔距離設為0.4mm。
藉由片材4P密封所製得安裝構件而製得安裝結構體。具體而言，以空間維持層41P面對SAW晶片之方式將片材4P配置於安裝構件後，於減壓環境氣體下(400Pa)朝玻璃基板按壓片材4P，同時將片材4P以預定密封溫度(t)加熱1分鐘，然後，於150℃、約10,000Pa(1atm)下加熱180分鐘。表2中顯示密封溫度。
[評價2] ＜密封性＞ 藉由雷射顯微鏡，自玻璃基板側觀察所製得安裝結構體，並依據以下評價法進行評價。表2中顯示以下表示。 於全體SAW晶片與玻璃基板間形成充分之內部空間，且密封材無間隙地填充於SAW晶片間：最佳 於全體SAW晶片與玻璃基板間形成充分之內部空間，且密封材無間隙地填充於SAW晶片間，然而，可確認較大的樹脂侵入局部之內部空間：佳 於全體SAW晶片與玻璃基板間形成充分之內部空間，且密封材無間隙地填充於SAW晶片間，然而，有異常大的樹脂侵入等，各內部空間之大小(於中空部之樹脂侵入量)有誤差：可
＜熱循環試驗＞ 將安裝結構體於-55℃與+125℃之環境下交互放置各15分鐘的循環每次反覆250次，並藉由光學顯微鏡及SAT(超音波影像裝置)，自玻璃基板側觀察有無不佳(裂紋及剝離)，求取直到產生不佳為止的循環數。表2中顯示以下表示。
直到800循環為止無法確認不佳：最佳 在小於800循環~500循環以上會產生不佳：佳 在小於500循環會產生不佳：不佳
產業上之可利用性 本發明之安裝結構體之製造方法使用能維持第1電路構件與第2電路構件間之空間且抑制內部空間之膨脹的片材，因此，作為使用焊料凸塊的安裝結構體之製造方法是有用的。又，使用於該方法的本發明之片材亦適合於製造各種使用焊料凸塊的安裝結構體。
1‧‧‧第1電路構件 2‧‧‧第2電路構件 3‧‧‧焊料凸塊 4‧‧‧密封材(片材之硬化物) 4P‧‧‧片材 10‧‧‧安裝結構體 20‧‧‧安裝晶片 41‧‧‧硬化空間維持層 41P‧‧‧空間維持層 42‧‧‧硬化應力緩和層 42P‧‧‧應力緩和層 S‧‧‧內部空間
圖1為示意顯示本發明一實施形態之安裝結構體之截面圖。 圖2為示意顯示本發明一實施形態之片材之截面圖。 圖3為藉由安裝構件或安裝結構體之截面示意顯示本發明一實施形態之製造方法的說明圖。
1‧‧‧第1電路構件
2‧‧‧第2電路構件
3‧‧‧焊料凸塊
4‧‧‧密封材(片材之硬化物)
10‧‧‧安裝結構體
41‧‧‧硬化空間維持層
42‧‧‧硬化應力緩和層
S‧‧‧內部空間

Claims (6)

  1. 一種安裝結構體之製造方法，具備以下步驟：安裝構件準備步驟，係準備安裝構件，且前述安裝構件具備第1電路構件及透過凸塊搭載於前述第1電路構件的複數個第2電路構件，同時於前述第1電路構件與前述第2電路構件間形成有空間；片材準備步驟，係準備具備空間維持層及應力緩和層的片材；配置步驟，係以前述空間維持層面對前述第2電路構件之方式，將前述片材配置於前述安裝構件；及密封步驟，係朝前述第1電路構件按壓前述片材並同時加熱前述片材，一邊維持前述空間一邊密封前述第2電路構件來使前述片材硬化；又，前述凸塊為焊料凸塊，前述第2電路構件被密封時的溫度t下，前述空間維持層之損耗正切tanδ1t為1以下，硬化後的前述空間維持層之玻璃轉移溫度大於125℃，且於125℃以下之線膨脹係數為20ppm/K以下，且於前述第2電路構件被密封時的溫度t下，前述應力緩和層之損耗正切tanδ2t大於0.3，且儲存剪切彈性模數為1×103Pa以上。
  2. 如請求項1之安裝結構體之製造方法，其中，硬化後的前述應力緩和層於40℃以上且玻璃轉移溫 度以下的溫度範圍中之損耗正切tanδ2為0.02以上。
  3. 如請求項1或2之安裝結構體之製造方法，其中前述第1電路構件為陶瓷基板。
  4. 一種單片化安裝結構體之製造方法，具備以下步驟：將藉由如請求項1之製造方法製得的安裝結構體，按每個前述第2電路構件進行切割而單片化。
  5. 一種片材，用以密封安裝構件，該安裝構件具備第1電路構件及透過焊料凸塊搭載於前述第1電路構件的複數個第2電路構件，同時於前述第1電路構件與前述第2電路構件間形成有空間，前述片材具備空間維持層及應力緩和層，前述第2電路構件被密封時的溫度t下，前述空間維持層之損耗正切tanδ1t為1以下，硬化後的前述空間維持層之玻璃轉移溫度大於125℃，且於125℃以下之線膨脹係數為20ppm/K以下，且於前述第2電路構件被密封時的溫度t下，前述應力緩和層之損耗正切tanδ2t大於0.3，且儲存剪切彈性模數為1×103Pa以上。
  6. 如請求項5之片材，其中，前述空間維持層配置於至少一側之最外側，硬化後的前述應力緩和層於40℃以上且玻璃轉移溫度以下的溫度範圍中之損耗正切tanδ2為0.02以上。
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