TWI783325B - Direct type backlight device - Google Patents
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- TWI783325B TWI783325B TW109144519A TW109144519A TWI783325B TW I783325 B TWI783325 B TW I783325B TW 109144519 A TW109144519 A TW 109144519A TW 109144519 A TW109144519 A TW 109144519A TW I783325 B TWI783325 B TW I783325B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133608—Direct backlight including particular frames or supporting means
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133612—Electrical details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/119—Details of rigid insulating substrates therefor, e.g. three-dimensional details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10121—Optical component, e.g. opto-electronic component
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
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- Vessels And Coating Films For Discharge Lamps (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
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Abstract
Description
本發明是關於一種背光裝置,且特別是關於一種直下式背光裝置。The present invention relates to a backlight device, and in particular to a direct-lit backlight device.
直下式背光裝置直接設置在液晶顯示面板的後方,具有窄邊框的優勢,廣泛的應用於大尺寸液晶顯示裝置,然而,直下式背光裝置也會導致液晶顯示裝置的厚度增加。The direct type backlight device is arranged directly behind the liquid crystal display panel, which has the advantage of narrow frame, and is widely used in large-size liquid crystal display devices. However, the direct type backlight device also increases the thickness of the liquid crystal display device.
次毫米發光二極體(Mini LED)是一種尺寸大約在100微米(micrometer,µm)的小型發光二極體(LED),將次毫米發光二極體應用到直下式背光裝置中,則能夠在實現窄邊框的同時,也減少液晶顯示裝置的厚度增加。The sub-millimeter light-emitting diode (Mini LED) is a small light-emitting diode (LED) with a size of about 100 microns (micrometer, µm). Applying the sub-millimeter light-emitting diode to a direct-lit backlight device can be used in While realizing the narrow frame, the thickness increase of the liquid crystal display device is also reduced.
一般而言,直下式背光裝置為了增加反射光的效能,通常會貼附反射材料(光反射器/光反射片)來提高整體的亮度,並且,就光學特性而言,光反射器的厚度越厚,相對反射率越高。換言之,光反射器的厚度對於直下式背光裝置的發光效率有相當重要的影響。Generally speaking, in order to increase the performance of reflected light, direct-lit backlight devices usually attach reflective materials (light reflectors/light reflective sheets) to improve the overall brightness, and, in terms of optical characteristics, the thicker the light reflector The thicker, the higher the relative reflectivity. In other words, the thickness of the light reflector has a very important influence on the luminous efficiency of the direct type backlight device.
然而,經實驗發現,在習知的直下式背光裝置中,隨著光反射器的厚度超出次毫米發光二極體覆蓋越多,整體的發光效率就會越差,從而導致光反射器的厚度受到相當程度的限制。因此,實有必要針對上述問題提出一種解決方案。However, it has been found through experiments that in conventional direct-lit backlight devices, as the thickness of the light reflector exceeds sub-millimeters, the more the light-emitting diodes cover, the worse the overall luminous efficiency will be, resulting in the thickness of the light reflector are considerably restricted. Therefore, it is necessary to propose a solution to the above-mentioned problems.
因此,本發明之一目的就是在提供一種直下式背光裝置,其利用印刷電路板之多個凸塊結構來使次毫米發光二極體晶片的高度提升,從而可以解決光反射器的厚度受到限制的問題。Therefore, one object of the present invention is to provide a direct-lit backlight device, which utilizes the multiple bump structures of the printed circuit board to increase the height of the sub-millimeter light-emitting diode chip, thereby solving the problem that the thickness of the light reflector is limited. The problem.
根據本發明之上述目的,提出一種直下式背光裝置包括印刷電路板、光反射器以及多個次毫米發光二極體晶片。光反射器係設置於印刷電路板上。所述多個次毫米發光二極體晶片係設置於印刷電路板上。至少部分相鄰的所述多個次毫米發光二極體晶片之間設置有光反射器。每個次毫米發光二極體晶片包括非發光層與設置於非發光層上的發光層。每個次毫米發光二極體晶片的發光層的底面高於光反射器的頂面。According to the above objectives of the present invention, a direct-lit backlight device including a printed circuit board, a light reflector, and a plurality of submillimeter light-emitting diode chips is proposed. The light reflector is arranged on the printed circuit board. The plurality of submillimeter light-emitting diode chips are arranged on a printed circuit board. A light reflector is arranged between at least part of the plurality of adjacent submillimeter light emitting diode chips. Each submillimeter light-emitting diode chip includes a non-light-emitting layer and a light-emitting layer disposed on the non-light-emitting layer. The bottom surface of the light emitting layer of each submillimeter light emitting diode wafer is higher than the top surface of the light reflector.
根據本發明之一些實施例,上述光反射器具有厚度Tr。光反射器的厚度Tr具有一公差Ae。每個次毫米發光二極體晶片的發光層的底面至光反射器的頂面的距離為Hd,其中Hd≧(Tr*Ae)。According to some embodiments of the present invention, the above-mentioned light reflector has a thickness Tr. The thickness Tr of the light reflector has a tolerance Ae. The distance from the bottom surface of the light emitting layer of each submillimeter light emitting diode chip to the top surface of the light reflector is Hd, where Hd≧(Tr*Ae).
根據本發明之一些實施例,上述印刷電路板具有多個凸塊結構。所述多個次毫米發光二極體晶片分別設置於所述多個凸塊結構上。According to some embodiments of the present invention, the above-mentioned printed circuit board has a plurality of bump structures. The plurality of submillimeter light-emitting diode chips are respectively disposed on the plurality of bump structures.
根據本發明之一些實施例,上述印刷電路板更具有多個接合墊設置於所述多個凸塊結構上。所述多個次毫米發光二極體晶片設置於所述多個接合墊上。According to some embodiments of the present invention, the above-mentioned printed circuit board further has a plurality of bonding pads disposed on the plurality of bump structures. The plurality of submillimeter LED chips are disposed on the plurality of bonding pads.
根據本發明之一些實施例,每個凸塊結構具有厚度Hb。每個接合墊具有厚度Cu。每個次毫米發光二極體晶片的非發光層具有厚度To,其中Hb=Tr-Cu-(To-Tr*Ae)。According to some embodiments of the present invention, each bump structure has a thickness Hb. Each bond pad has a thickness Cu. The non-emitting layer of each submillimeter LED wafer has a thickness To, where Hb=Tr-Cu-(To-Tr*Ae).
根據本發明之一些實施例,次毫米發光二極體晶片之其中一者的至少二接觸墊設置於次毫米發光二極體晶片之其中該者所對應的凸塊結構之其中一者的垂直投影範圍內。According to some embodiments of the present invention, at least two contact pads of one of the submillimeter LED chips are disposed on a vertical projection of one of the bump structures corresponding to one of the submillimeter LED chips within range.
根據本發明之一些實施例,上述印刷電路板更具有防焊漆層,共形地形成於印刷電路板的上表面上與每個凸塊結構的側表面上。According to some embodiments of the present invention, the above-mentioned printed circuit board further has a solder resist paint layer conformally formed on the upper surface of the printed circuit board and on the side surface of each bump structure.
根據本發明之一些實施例,上述光反射器設置於防焊漆層上,且防焊漆層部分地包覆光反射器。According to some embodiments of the present invention, the light reflector is disposed on the solder resist paint layer, and the solder resist paint layer partially covers the light reflector.
根據本發明之一些實施例,每個凸塊結構具有厚度Hb。每個接合墊具有厚度Cu。每個次毫米發光二極體晶片的非發光層具有厚度To。防焊漆層具有厚度T,其中Hb=Tr-Cu-(To-Tr*Ae)+T。According to some embodiments of the present invention, each bump structure has a thickness Hb. Each bond pad has a thickness Cu. The non-emitting layer of each sub-millimeter LED wafer has a thickness To. The solder mask layer has a thickness T, where Hb=Tr-Cu-(To-Tr*Ae)+T.
根據本發明之一些實施例,每個接合墊包括金屬層與設置於金屬層上的表面鍍層。According to some embodiments of the present invention, each bonding pad includes a metal layer and a surface plating layer disposed on the metal layer.
根據本發明之一些實施例,上述印刷電路板包括防焊印刷層、基板層與金屬層,基板層設置於防焊印刷層上,金屬層設置於基板層上。According to some embodiments of the present invention, the above-mentioned printed circuit board includes a solder resist printing layer, a substrate layer and a metal layer, the substrate layer is disposed on the solder resist printing layer, and the metal layer is disposed on the substrate layer.
根據本發明之一些實施例,每個次毫米發光二極體晶片具有兩個接觸墊,其中所述兩個接觸墊一對二地電性連接所述多個接合墊。According to some embodiments of the present invention, each submillimeter light-emitting diode chip has two contact pads, wherein the two contact pads are electrically connected to the plurality of bonding pads in a one-to-two manner.
根據本發明之一些實施例,每個次毫米發光二極體晶片具有四個接觸墊,其中所述四個接觸墊一對一地電性連接所述多個接合墊。According to some embodiments of the present invention, each submillimeter LED chip has four contact pads, wherein the four contact pads are electrically connected to the bonding pads one-to-one.
根據本發明之一些實施例,上述光反射器的厚度越厚,則直下式背光裝置的發光效率越高。According to some embodiments of the present invention, the thicker the light reflector is, the higher the luminous efficiency of the direct-lit backlight device is.
根據本發明之上述目的,另提出一種直下式背光裝置包括印刷電路板、光反射器及多個次毫米發光二極體晶片。所述印刷電路板具有多個凸塊結構。至少部分相鄰的所述多個凸塊結構之間設置有光反射器。所述多個次毫米發光二極體晶片分別設置於所述多個凸塊結構上。每個次毫米發光二極體晶片包括非發光層與設置於非發光層上的發光層。每個次毫米發光二極體晶片的發光層的底面高於光反射器的頂面。According to the above object of the present invention, another direct-lit backlight device is provided, which includes a printed circuit board, a light reflector, and a plurality of submillimeter light-emitting diode chips. The printed circuit board has a plurality of bump structures. A light reflector is arranged between at least part of the plurality of adjacent bump structures. The plurality of submillimeter light-emitting diode chips are respectively disposed on the plurality of bump structures. Each submillimeter light-emitting diode chip includes a non-light-emitting layer and a light-emitting layer disposed on the non-light-emitting layer. The bottom surface of the light emitting layer of each submillimeter light emitting diode wafer is higher than the top surface of the light reflector.
根據本發明之一些實施例,上述光反射器具有厚度Tr。光反射器的厚度Tr具有一公差Ae。每個次毫米發光二極體晶片的發光層的底面至光反射器的頂面的距離為Hd,其中Hd≧(Tr*Ae)。According to some embodiments of the present invention, the above-mentioned light reflector has a thickness Tr. The thickness Tr of the light reflector has a tolerance Ae. The distance from the bottom surface of the light emitting layer of each submillimeter light emitting diode chip to the top surface of the light reflector is Hd, where Hd≧(Tr*Ae).
根據本發明之一些實施例,上述印刷電路板更具有多個接合墊設置於所述多個凸塊結構上。所述多個次毫米發光二極體晶片設置於所述多個接合墊上。According to some embodiments of the present invention, the above-mentioned printed circuit board further has a plurality of bonding pads disposed on the plurality of bump structures. The plurality of submillimeter LED chips are disposed on the plurality of bonding pads.
根據本發明之一些實施例,每個凸塊結構具有厚度Hb。每個接合墊具有厚度Cu。每個次毫米發光二極體晶片的非發光層具有厚度To,其中Hb=Tr-Cu-(To-Tr*Ae)。According to some embodiments of the present invention, each bump structure has a thickness Hb. Each bond pad has a thickness Cu. The non-emitting layer of each submillimeter LED wafer has a thickness To, where Hb=Tr-Cu-(To-Tr*Ae).
根據本發明之一些實施例,次毫米發光二極體晶片之其中一者的至少二接觸墊設置於次毫米發光二極體晶片之其中該者所對應的凸塊結構之其中一者的垂直投影範圍內。According to some embodiments of the present invention, at least two contact pads of one of the submillimeter LED chips are disposed on a vertical projection of one of the bump structures corresponding to one of the submillimeter LED chips within range.
根據本發明之一些實施例,上述印刷電路板更具有防焊漆層,共形地形成於印刷電路板的上表面上與每個凸塊結構的側表面上。上述光反射器設置於防焊漆層上,且防焊漆層部分地包覆光反射器。According to some embodiments of the present invention, the above-mentioned printed circuit board further has a solder resist paint layer conformally formed on the upper surface of the printed circuit board and on the side surface of each bump structure. The light reflector is disposed on the solder resist paint layer, and the solder resist paint layer partially covers the light reflector.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
以下仔細討論本發明的實施例。然而,可以理解的是,實施例提供許多可應用的概念,其可實施於各式各樣的特定內容中。所討論、揭示之實施例僅供說明,並非用以限定本發明之範圍。Embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The discussed and disclosed embodiments are for illustration only, and are not intended to limit the scope of the present invention.
另外,本發明所敘述之二元件之間的空間關係不僅適用於圖式所繪示之方位,亦適用於圖式所未呈現之方位,例如倒置之方位。此外,本發明所稱二個部件的「連接」、「電性連接」、或之類用語並非僅限制於此二者為直接的連接或電性連接,亦可視需求而包含間接的連接或電性連接。In addition, the spatial relationship between the two elements described in the present invention is not only applicable to the orientation shown in the drawing, but also applicable to the orientation not shown in the drawing, such as an inverted orientation. In addition, the term "connection", "electrical connection" or the like of two components in the present invention is not limited to the direct connection or electrical connection between the two parts, but may also include indirect connection or electrical connection as required. sexual connection.
圖1係根據本發明的第一實施例之直下式背光裝置100的俯視圖。圖2係根據本發明的第一實施例之沿著圖1之線A-A’之直下式背光裝置100的剖視圖。直下式背光裝置100包含印刷電路板(Printed Circuit Board,PCB)120、光反射器130與多個次毫米發光二極體晶片140。FIG. 1 is a top view of a direct-
在本發明的實施例中,印刷電路板120所使用的材料等級可例如為FR-4板(玻璃布基板,係由玻璃布(Woven glass)與環氧樹脂(Epoxy)所做出的複合材料)。在本發明的實施例中,光反射器130的組成材料可例如為二氧化鈦(Titanium dioxide,TiO
2)。
In the embodiment of the present invention, the grade of material used for the printed
圖3係根據本發明的第一實施例之直下式背光裝置100的印刷電路板120的立體示意圖。請一併參照圖1、圖2與圖3,印刷電路板120具有多個凸塊結構122。光反射器130設置於印刷電路板120上但不設置於印刷電路板120的凸塊結構122上。次毫米發光二極體晶片140設置於印刷電路板120上且設置於印刷電路板120的凸塊結構122上。至少部分相鄰的次毫米發光二極體晶片140之間設置有光反射器130。至少部分相鄰的凸塊結構122之間設置有光反射器130。具體而言,光反射器130係環繞次毫米發光二極體晶片140。應注意的是,圖1、圖2與圖3所示之次毫米發光二極體晶片140、凸塊結構122的數量僅為例示並非用以限定本發明。FIG. 3 is a schematic perspective view of the printed
每個次毫米發光二極體晶片140包括非發光層142與設置於非發光層142上的發光層144。具體而言,次毫米發光二極體晶片140的非發光層142為次毫米發光二極體晶片140的基板,次毫米發光二極體晶片140的發光層144為次毫米發光二極體晶片140的磊晶層(Epitaxial layer)。Each submillimeter light-emitting
如圖2所示,在本發明的實施例中,次毫米發光二極體晶片140的發光層144的底面高於光反射器130的頂面。換言之,對本發明而言,光反射器130的厚度不會超出次毫米發光二極體晶片140的發光層144的覆蓋,因此,本發明可解決習知的直下式背光裝置所會遭遇之隨著光反射器的厚度超出次毫米發光二極體覆蓋越多,整體的發光效率就會越差的問題。具體而言,本發明的直下式背光裝置係設計印刷電路板的新結構,利用印刷電路板之多個凸塊結構來使次毫米發光二極體晶片的高度提升,從而可以解決習知的直下式背光裝置之光反射器的厚度受到限制的問題。As shown in FIG. 2 , in an embodiment of the present invention, the bottom surface of the
應注意的是,在本發明的實施例中,光反射器130的厚度越厚,相對反射率越高,而相對反射率越高則直下式背光裝置100的亮度越高且發光效率也越高,因此,對本發明而言,當次毫米發光二極體晶片140的發光層144的底面與光反射器130的頂面相互齊平,將可使得直下式背光裝置100的發光效率為最佳。換言之,本發明的較佳實施例為次毫米發光二極體晶片140的發光層144的底面與光反射器130的頂面相互齊平。It should be noted that, in the embodiment of the present invention, the thicker the
圖4係根據本發明的第一實施例之圖2的局部放大圖。光反射器130具有厚度Tr,其中光反射器130的厚度Tr具有公差Ae,在本發明的實施例中,光反射器130的厚度Tr的公差Ae可例如為10%,但本發明不限於此,具體而言,光反射器的厚度的公差將視各供應製造商的製程與管控能力而有所不同。次毫米發光二極體晶片140的發光層144的底面至光反射器130的頂面的距離為Hd。在本發明的實施例中,距離Hd≧(厚度Tr*公差Ae)。FIG. 4 is a partially enlarged view of FIG. 2 according to the first embodiment of the present invention. The
具體而言,由於本發明的設計要求為次毫米發光二極體晶片140的發光層144的底面高於光反射器130的頂面,因此,於理想情況下,本發明的設計要求為距離Hd≧0。然而,於實際工藝製作的過程中,光反射器130的厚度Tr將不可避免的會有製作上的公差,為了能夠保證達到本發明的設計要求(即:次毫米發光二極體晶片140的發光層144的底面高於光反射器130的頂面),因此,於實務上,將本發明的設計要求設定為距離Hd≧(厚度Tr*公差Ae),並且,本發明的較佳實施例為距離Hd=厚度Tr*公差Ae。Specifically, since the design requirement of the present invention is that the bottom surface of the light-emitting
請回到圖2,印刷電路板120更具有多個接合墊(Bonding pads)150設置於印刷電路板120的凸塊結構122上,並且,次毫米發光二極體晶片140設置於接合墊150上。在本發明的實施例中,接合墊150包含金屬層與設置於金屬層上的表面鍍層(圖未示出),金屬層可例如為銅(Cu)金屬層。表面鍍層用以避免銅金屬層被氧化的保護層。表面鍍層可例如為先鍍鎳(Ni)再鍍金(Au)的表面鍍層。Please return to FIG. 2 , the printed
請再次參照圖4,光反射器130具有厚度Tr,光反射器130的厚度Tr具有公差Ae,次毫米發光二極體晶片140的發光層144的底面至光反射器130的頂面的距離為Hd,凸塊結構122具有厚度Hb,接合墊150具有厚度Cu,次毫米發光二極體晶片140的非發光層142具有厚度To。在本發明的實施例中,如圖4所示,厚度Hb=距離Hd+厚度Tr-厚度Cu-厚度To。Please refer to FIG. 4 again, the
如上所述,本發明的設計要求設定為距離Hd≧(厚度Tr*公差Ae),因此,本發明的設計要求設定為厚度Hb≧(厚度Tr*公差Ae)+厚度Tr-厚度Cu-厚度To,換言之,本發明的設計要求設定為厚度Hb≧厚度Tr-厚度Cu-(厚度To-厚度Tr*公差Ae)。As mentioned above, the design requirement of the present invention is set as distance Hd≧(thickness Tr*tolerance Ae), therefore, the design requirement of the present invention is set as thickness Hb≧(thickness Tr*tolerance Ae)+thickness Tr-thickness Cu-thickness To In other words, the design requirement of the present invention is set as thickness Hb≧thickness Tr−thickness Cu−(thickness To−thickness Tr*tolerance Ae).
如上所述,本發明的較佳實施例為距離Hd=厚度Tr*公差Ae。因此,本發明的較佳實施例為厚度Hb=(厚度Tr*公差Ae)+厚度Tr-厚度Cu-厚度To,換言之,本發明的較佳實施例為厚度Hb=厚度Tr-厚度Cu-(厚度To-厚度Tr*公差Ae)。As mentioned above, a preferred embodiment of the present invention is distance Hd=thickness Tr*tolerance Ae. Therefore, the preferred embodiment of the present invention is thickness Hb=(thickness Tr*tolerance Ae)+thickness Tr-thickness Cu-thickness To, in other words, the preferred embodiment of the present invention is thickness Hb=thickness Tr-thickness Cu-( Thickness To - thickness Tr * tolerance Ae).
請回到圖2,印刷電路板120包含防焊印刷層124、基板層126與金屬層128,基板層126設置於防焊印刷層124上,金屬層128設置於基板層126上。在本發明的實施例中,防焊印刷層124的功用為防潮、防焊、絕緣等,防焊印刷層124可為有機可焊性保護層(Organic Solderability Preservative,OSP),防焊印刷層124的組成材料可例如為酚醛環氧壓克力樹脂、酚醛環氧丙烯酸酯樹脂。Please return to FIG. 2 , the printed
圖5係根據本發明的第二實施例之直下式背光裝置200的剖視圖。圖6係根據本發明的第二實施例之直下式背光裝置200的印刷電路板120的立體示意圖。直下式背光裝置200與直下式背光裝置100類似,差別在於,直下式背光裝置200更具有防焊漆層170,防焊漆層170共形地形成於印刷電路板120的上表面上與凸塊結構122的側表面上。在本發明的第二實施例中,光反射器130設置於防焊漆層170上,且防焊漆層170部分地包覆光反射器130。在本發明的第二實施例中,防焊漆層170的功用為防潮、防焊、絕緣等,防焊漆層170可為有機可焊性保護層(OSP),防焊漆層170的組成材料可例如為酚醛環氧壓克力樹脂、酚醛環氧丙烯酸酯樹脂。FIG. 5 is a cross-sectional view of a direct-
圖7係根據本發明的第二實施例之圖5的局部放大圖。光反射器130具有厚度Tr,光反射器130的厚度Tr具有公差Ae,次毫米發光二極體晶片140的發光層144的底面至光反射器130的頂面的距離為Hd,凸塊結構122具有厚度Hb,接合墊150具有厚度Cu,防焊漆層170具有厚度T,次毫米發光二極體晶片140的非發光層142具有厚度To。在本發明的第二實施例中,直下式背光裝置200包含有防焊漆層170,則如圖7所示,厚度Hb=距離Hd+厚度Tr-厚度Cu-厚度To+厚度T。FIG. 7 is a partially enlarged view of FIG. 5 according to a second embodiment of the present invention. The
如上所述,本發明的設計要求設定為距離Hd≧(厚度Tr*公差Ae),因此,包含有防焊漆層170的直下式背光裝置200的設計要求設定為厚度Hb≧(厚度Tr*公差Ae)+厚度Tr-厚度Cu-厚度To+厚度T,換言之,包含有防焊漆層170的直下式背光裝置200的設計要求設定為厚度Hb≧厚度Tr-厚度Cu-(厚度To-厚度Tr*公差Ae)+厚度T。As mentioned above, the design requirement of the present invention is set as distance Hd≧(thickness Tr*tolerance Ae), therefore, the design requirement of the direct
如上所述,本發明的較佳實施例為距離Hd=厚度Tr*公差Ae。因此,包含有防焊漆層170的直下式背光裝置200的較佳實施例為厚度Hb=(厚度Tr*公差Ae)+厚度Tr-厚度Cu-厚度To+厚度T,換言之,包含有防焊漆層170的直下式背光裝置200的較佳實施例為厚度Hb=厚度Tr-厚度Cu-(厚度To-厚度Tr*公差Ae)+厚度T。As mentioned above, a preferred embodiment of the present invention is distance Hd=thickness Tr*tolerance Ae. Therefore, a preferred embodiment of the direct
應注意的是,在本發明的上述實施方式中皆是以次毫米發光二極體晶片來做說明,但實際上本發明不限於此,本發明的直下式背光裝置亦可選用發光二極體(LED)晶片或微發光二極體(Micro LED)晶片來做為發光源。It should be noted that in the above-mentioned embodiments of the present invention, sub-millimeter light-emitting diode chips are used for illustration, but in fact the present invention is not limited thereto, and the direct-lit backlight device of the present invention can also use light-emitting diodes (LED) chip or micro light emitting diode (Micro LED) chip as the light source.
在本發明的實施例中,印刷電路板120實際上是利用例如光罩蝕刻製程從而能夠對應地在多個接合墊150的垂直投影區域相應地形成多個凸塊結構122,並接著在每個凸塊結構122上設置接合墊150。此外,在本發明的其他實施例中,也可在凸塊結構122上形成子凸塊,並接著在子凸塊上設置接合墊150。In the embodiment of the present invention, the printed
在本發明的實施例中,次毫米發光二極體晶片140實際上是透過覆晶封裝技術(Flip chip)來與印刷電路板120電性連接,意即,在次毫米發光二極體晶片140的晶粒(Die)之接觸墊(Contact pad)上生成錫鉛凸塊(solder bump),並將次毫米發光二極體晶片140翻轉後經由迴焊(reflow)製程將錫鉛凸塊熔融,待錫鉛凸塊冷卻凝固之後,即可使得次毫米發光二極體晶片140的錫鉛凸塊與接合墊150電性連接,從而實現次毫米發光二極體晶片140的接觸墊與印刷電路板120的接合墊150之電性互連。In the embodiment of the present invention, the sub-millimeter light-emitting
圖8係根據本發明的實施例之凸塊結構122上的接合墊150與次毫米發光二極體晶片140的接觸墊146於垂直方向上的相對位置之示意圖。一般而言,印刷電路板120的每個凸塊結構122上會設置有兩個極性相反的接合墊140來分別電性連接每個次毫米發光二極體晶片140的兩個接觸墊146(正極接觸墊與負極接觸墊)。此外,本發明也可適用於垂直式LED的次毫米發光二極體晶片,則印刷電路板的每個凸塊結構上只會設置一個接合墊。FIG. 8 is a schematic view showing the relative positions of the
在本發明的實施例中,為了確保次毫米發光二極體晶片140的正極接觸墊與負極接觸墊能夠較佳地對位至其下方之凸塊結構122上的兩個極性相反的接合墊,如圖8所示,本發明的設計要求設定為次毫米發光二極體晶片140的接觸墊146的設置範圍需位於凸塊結構122之朝向上方的垂直投影範圍P內,換言之,次毫米發光二極體晶片140的接觸墊146設置於凸塊結構122的垂直投影範圍P內。In an embodiment of the present invention, in order to ensure that the anode contact pad and the anode contact pad of the submillimeter light-emitting
如上所述,本發明是透過覆晶封裝技術並經由迴焊製程以使得次毫米發光二極體晶片140的接觸墊146與印刷電路板120的凸塊結構122上的接合墊150電性連接。其中,在迴焊的過程中之熔融的錫鉛凸塊會由於表面張力效應,使得錫鉛凸塊會自動接合於印刷電路板120上的接合墊150,這種自我對位(self-alignment)能力可以使得因為打件歪斜所造成的錯位被改善。換言之,迴焊製程可藉由表面張力效應來使得兩個對接點(即接觸墊與接合墊)在迴焊過程中逐漸導正而實現自動對位。As mentioned above, the present invention makes the
一般而言,每個次毫米發光二極體晶片會有兩個接觸墊(正極接觸墊與負極接觸墊)來對應地分別電性連接印刷電路板上的兩個接合墊。然而,此種連接方式在打件歪斜的情況下,可能仍會有無法完全導正的問題產生。圖9係用以說明上述之無法完全導正的問題之示意圖。圖9的左上圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的上視圖,可理解的是,在打件歪斜的情況下,次毫米發光二極體晶片140的兩個接觸墊146與印刷電路板120的凸塊結構122上的兩個接合墊150之間存在一些錯位偏移。Generally, each submillimeter LED chip has two contact pads (a positive contact pad and a negative contact pad) to electrically connect to two bonding pads on the printed circuit board respectively. However, this connection method may still have the problem that it cannot be completely aligned when the parts are skewed. Fig. 9 is a schematic diagram for illustrating the above-mentioned problems that cannot be completely corrected. The upper left figure of FIG. 9 is a top view of the sub-millimeter light-emitting
圖9的右上圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的右側視圖,換言之,圖9的右上圖表示的是圖9的左上圖在垂直方向之對接點的電性連接示意。其中,圖9的右上圖的黑色粗線箭頭代表的是表面張力的牽引方向。由圖9的右上圖可知,由於每一組接觸墊146與接合墊150之間皆存在有兩個方向的表面張力的互相牽引,所以圖9的左上圖在垂直方向之對接點之電性連接可在迴焊過程中逐漸導正而實現自動對位。The upper right figure of FIG. 9 is a right side view of the submillimeter light-emitting
圖9的左下圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的前側視圖,換言之,圖9的左下圖表示的是圖9的左上圖在水平方向之對接點的電性連接示意。由圖9的左下圖可知,由於接觸墊146與接合墊150之間僅存在單一方向的表面張力的牽引,所以圖9的左下圖在水平方向之對接點之電性連接已無法在迴焊過程中完全導正,如圖9的左下圖所示,接觸墊146相較於接合墊150的左側間隙小於右側間隙。The lower left figure of FIG. 9 is a front side view of the submillimeter light-emitting
圖10係根據本發明的第三實施例之接合墊150的設計改變的示意圖。圖10係用以增加接觸墊146與接合墊150在迴焊過程中的自我對位能力,以解決上述之在打件歪斜的情況下無法完全導正的問題。如圖10所示,每個次毫米發光二極體晶片140會有兩個接觸墊146,且次毫米發光二極體晶片146的每個接觸墊146會電性連接印刷電路板上的兩個接合墊150。換言之,次毫米發光二極體晶片146的每個接觸墊146一對二地電性連接兩個接合墊150。FIG. 10 is a schematic diagram of a design change of the
圖10的左上圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的上視圖,圖10的右上圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的右側視圖,換言之,圖10的右上圖表示的是圖10的左上圖在垂直方向之對接點的電性連接示意。由圖10的右上圖可知,由於每一組接觸墊146與接合墊150之間皆存在有兩個方向的表面張力的互相牽引,所以圖10的左上圖在垂直方向之對接點之電性連接可在迴焊過程中逐漸導正而實現自動對位。The upper left figure of FIG. 10 is a top view of the
圖10的左下圖為次毫米發光二極體晶片140與印刷電路板120的凸塊結構122的前側視圖,換言之,圖10的左下圖表示的是圖10的左上圖在水平方向之對接點的電性連接示意。由圖10的左下圖可知,由於接觸墊146與其相應的兩個接合墊150之每一者之間皆存在有兩個方向的表面張力的互相牽引,所以圖10的左上圖在水平方向之對接點之電性連接亦可在迴焊過程中逐漸導正而實現自動對位。The lower left figure of FIG. 10 is a front side view of the submillimeter light-emitting
圖11係根據本發明的第四實施例之接合墊150與接觸墊146的設計改變的示意圖。圖11係用以增加接觸墊146與接合墊150在迴焊過程中的自我對位能力,以解決上述之在打件歪斜的情況下無法完全導正的問題。如圖11的左上圖所示,每個次毫米發光二極體晶片140會有四個接觸墊146(兩個正極接觸墊與兩個負極接觸墊)。如圖11的左下圖所示,每個次毫米發光二極體晶片140所對應的印刷電路板120的凸塊結構122上會有四個接合墊150。在本發明的其他實施例中,也可在上述之四個接合墊的垂直投影區域相應地形成四個子凸塊結構在印刷電路板上。FIG. 11 is a schematic diagram of a design change of the
如圖11的右圖所示,每個次毫米發光二極體晶片146的四個接觸墊146會分別電性連接印刷電路板上的四個接合墊150。換言之,次毫米發光二極體晶片146的接觸墊146一對一地電性連接接合墊150。As shown in the right diagram of FIG. 11 , the four
由於每個接觸墊146皆會對應地電性連接一個接合墊150,因此每個接觸墊146與其所對應電性連接的一個接合墊150之間皆存在有兩個方向的表面張力的互相牽引,所以圖11之對接點之電性連接可在迴焊過程中逐漸導正而實現自動對位。Since each
綜合上述,本發明提出一種直下式背光裝置,其設計印刷電路板之新結構,利用印刷電路板之多個凸塊結構來使次毫米發光二極體晶片的高度提升,可以解決習知的直下式背光裝置之光反射器的厚度受到限制的問題,並有效地提高直下式背光裝置的發光效率。To sum up the above, the present invention proposes a direct-lit backlight device, which designs a new structure of the printed circuit board, uses the multiple bump structures of the printed circuit board to increase the height of the sub-millimeter light-emitting diode chip, and can solve the conventional direct-lit backlight. The thickness of the light reflector of the direct-lit backlight device is limited, and the luminous efficiency of the direct-lit backlight device is effectively improved.
以上概述了數個實施例的特徵,因此熟習此技藝者可以更了解本發明的態樣。熟習此技藝者應了解到,其可輕易地把本發明當作基礎來設計或修改其他的製程與結構,藉此實現和在此所介紹的這些實施例相同的目標及/或達到相同的優點。熟習此技藝者也應可明白,這些等效的建構並未脫離本發明的精神與範圍,並且他們可以在不脫離本發明精神與範圍的前提下做各種的改變、替換與變動。The features of several embodiments are outlined above, so those skilled in the art can better understand aspects of the present invention. Those skilled in the art should appreciate that they can easily use the present invention as a basis to design or modify other processes and structures, thereby achieving the same goals and/or achieving the same advantages as the embodiments described herein . Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions and alterations without departing from the spirit and scope of the present invention.
100,200:直下式背光裝置 120:印刷電路板 122:凸塊結構 124:防焊印刷層 126:基板層 128:金屬層 130:光反射器 140:次毫米發光二極體晶片 142:非發光層 144:發光層 146:接觸墊 150:接合墊 170:防焊漆層 A-A’:線 Cu,Hb,T,To,Tr:厚度 Hd:距離 P:垂直投影範圍 100,200: direct type backlight device 120: Printed circuit board 122: Bump structure 124: Solder resist printing layer 126: substrate layer 128: metal layer 130: light reflector 140: Submillimeter light-emitting diode chip 142: non-luminous layer 144: luminous layer 146: contact pad 150: joint pad 170: Solder resist paint layer A-A': line Cu, Hb, T, To, Tr: Thickness Hd: distance P: vertical projection range
從以下結合所附圖式所做的詳細描述,可對本發明之態樣有更佳的了解。需注意的是,根據業界的標準實務,各特徵並未依比例繪示。事實上,為了使討論更為清楚,各特徵的尺寸都可任意地增加或減少。 [圖1]係根據本發明的第一實施例之直下式背光裝置的俯視圖。 [圖2]係根據本發明的第一實施例之沿著圖1之線之直下式背光裝置的剖視圖。 [圖3]係根據本發明的第一實施例之直下式背光裝置的印刷電路板的立體示意圖。 [圖4]係根據本發明的第一實施例之圖2的局部放大圖。 [圖5]係根據本發明的第二實施例之直下式背光裝置的剖視圖。 [圖6]係根據本發明的第二實施例之直下式背光裝置的印刷電路板的立體示意圖。 [圖7]係根據本發明的第二實施例之圖5的局部放大圖。 [圖8]係根據本發明的實施例之凸塊結構上的接合墊與次毫米發光二極體晶片的接觸墊於垂直方向上的相對位置之示意圖。 [圖9]係用以說明無法完全導正的問題之示意圖。 [圖10]係根據本發明的第三實施例之接合墊的設計改變的示意圖。 [圖11]係根據本發明的第四實施例之接合墊與接觸墊的設計改變的示意圖。 A better understanding of aspects of the present invention can be obtained from the following detailed description in conjunction with the accompanying drawings. It is to be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. [ Fig. 1 ] is a plan view of a direct type backlight device according to a first embodiment of the present invention. [ FIG. 2 ] is a sectional view of the direct type backlight device along the line of FIG. 1 according to the first embodiment of the present invention. [ FIG. 3 ] is a three-dimensional schematic diagram of a printed circuit board of a direct-type backlight device according to a first embodiment of the present invention. [ Fig. 4 ] is a partially enlarged view of Fig. 2 according to the first embodiment of the present invention. [ Fig. 5 ] is a sectional view of a direct type backlight device according to a second embodiment of the present invention. [ FIG. 6 ] is a three-dimensional schematic diagram of a printed circuit board of a direct-type backlight device according to a second embodiment of the present invention. [ Fig. 7 ] is a partially enlarged view of Fig. 5 according to a second embodiment of the present invention. [ FIG. 8 ] is a schematic view showing the relative positions of the bonding pads on the bump structure and the contact pads of the submillimeter LED chip in the vertical direction according to an embodiment of the present invention. [Fig. 9] is a schematic diagram used to illustrate the problem that cannot be completely corrected. [ Fig. 10 ] is a schematic diagram of a design change of a bonding pad according to a third embodiment of the present invention. [ FIG. 11 ] is a schematic view showing changes in the design of bonding pads and contact pads according to a fourth embodiment of the present invention.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none
200:直下式背光裝置 200: direct type backlight device
120:印刷電路板 120: Printed circuit board
122:凸塊結構 122: Bump structure
124:防焊印刷層 124: Solder resist printing layer
126:基板層 126: substrate layer
128:金屬層 128: metal layer
130:光反射器 130: light reflector
140:次毫米發光二極體晶片 140: Submillimeter light-emitting diode chip
142:非發光層 142: non-luminous layer
144:發光層 144: luminous layer
150:接合墊 150: joint pad
170:防焊漆層 170: Solder resist paint layer
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI230425B (en) * | 2004-02-06 | 2005-04-01 | South Epitaxy Corp | Bumping process for light emitting diode |
TWI238551B (en) * | 2004-10-12 | 2005-08-21 | Epitech Corp Ltd | Light-emitting diode backlighting module and method for manufacturing the same |
TWM273734U (en) * | 2005-03-22 | 2005-08-21 | J S Technology Co Ltd | LED backlight module of direct thin type |
TWI356486B (en) * | 2007-09-07 | 2012-01-11 | Young Lighting Technology | Led light source module and manufacturing method t |
JP4959506B2 (en) * | 2007-10-31 | 2012-06-27 | 株式会社ジャパンディスプレイイースト | Liquid crystal display |
TWI370882B (en) * | 2009-06-03 | 2012-08-21 | Delta Electronics Inc | Lamp and its illumminating device |
KR20130057833A (en) * | 2011-11-24 | 2013-06-03 | (주)더리즈 | Led backlight unit bar |
CN103439833A (en) * | 2013-08-21 | 2013-12-11 | 深圳Tcl新技术有限公司 | Backlight module and display device comprising same |
JP2015072794A (en) * | 2013-10-03 | 2015-04-16 | 株式会社ジャパンディスプレイ | Liquid crystal display device |
KR20170001436A (en) * | 2015-06-26 | 2017-01-04 | 서울반도체 주식회사 | Back light unit having light emitting diode |
CN207123684U (en) * | 2016-09-30 | 2018-03-20 | 深圳市玲涛光电科技有限公司 | Flexible surface light source and its electronic equipment |
US10514574B2 (en) * | 2017-07-24 | 2019-12-24 | Wuhan China Star Optoelectronics Technology Co., Ltd | Direct type backlight module and liquid crystal display |
US11054696B2 (en) * | 2017-09-26 | 2021-07-06 | Apple Inc. | Electronic devices having displays with direct-lit backlight units |
US10948163B2 (en) * | 2017-12-08 | 2021-03-16 | Seoul Semiconductor Co., Ltd. | Backlight unit |
JP6952203B2 (en) * | 2018-03-13 | 2021-10-20 | アップル インコーポレイテッドApple Inc. | Display with direct backlight unit |
CN108427519A (en) * | 2018-04-02 | 2018-08-21 | 业成科技(成都)有限公司 | Panel module and forming method thereof |
JP2019185921A (en) * | 2018-04-04 | 2019-10-24 | シャープ株式会社 | Illuminating device and display device comprising the same |
CN108828841B (en) * | 2018-07-26 | 2021-01-15 | 武汉华星光电技术有限公司 | LED backlight device and LED display device |
US10852583B2 (en) * | 2018-09-17 | 2020-12-01 | Sharp Kabushiki Kaisha | Lighting device, display device, and method of producing lighting device |
US10705382B2 (en) * | 2018-11-19 | 2020-07-07 | Sharp Kabushiki Kaisha | Lighting device and display device |
CN109669297A (en) * | 2018-12-07 | 2019-04-23 | 业成科技(成都)有限公司 | Display device and its manufacturing method |
CN109668062A (en) * | 2018-12-11 | 2019-04-23 | 业成科技(成都)有限公司 | Light-emitting diode area source structure |
CN111025757B (en) * | 2019-12-25 | 2022-06-21 | 业成科技(成都)有限公司 | Electronic device and method for manufacturing the same |
TWM595765U (en) * | 2020-01-20 | 2020-05-21 | 云光科技股份有限公司 | Direct type backlight device |
-
2020
- 2020-12-14 CN CN202011465708.6A patent/CN112578598B/en active Active
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202017204A (en) * | 2018-10-17 | 2020-05-01 | 云光科技股份有限公司 | Direct-type light guide structure enabling rays emitted by the light guide plate to be more uniform |
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