1238551 九、發明說明 【發明所屬之技術領域】 本發明是有關於一種發光二極體晶片（LED Chip)，且特 別是有關於一種應用發光二極體晶片之背光模組 (Backlighting Module)及其製造方法。 【先前技術】 發光二極體元件係一種可將電能轉換成光能之微細固 態光源。雲於發光二極體元件不但體積小，更具有驅動電壓 低、反應速率快、耐震、壽命長等特性，且又可配合各式應 用設備輕、薄、短、小之需求，因此已成為曰常生活中相當 普及之電子產品。 在傳統發光二極體元件中，受到封裝結構的影響，大部 分之光輸出都集中在軸向光，因此導致與軸向大夾角之光輸 出強度相對於軸向光輸出差異過大。如此一來，使得發光二 極體兀件應用在背光模組時，需外加導光板以增加侧向發光 性質，因而增添設計與製作之困難度，也因此而導致背光模 組之厚度增加，進而產生照度不足之缺點。 舉例而言，請參照第1圖，第丨圖係繪示習知發光二極 體之封裝結構示意圖。發光二極體元件丨〇〇主要係由發光二 極體晶粒102以及封裝薄膜104包覆在發光二極體晶粒i 〇2 上。發光二極體晶粒102所發射之光線直接穿透封裝薄膜 1 04而射出發光二極體元件！ 〇〇。請參照第2圖，第2圖係 繪示第1圖之發光二極體元件的光輸出強度與角度的關係 1238551 圖，其中橫軸表示亮度， ^ 102 ^ ^ ^ v .孕由表不角度。由於發光二極體晶 粒102絶大部分之光輸 氺古洚i屏& 1果千在軸向先，於是軸向位置之1238551 IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a light emitting diode chip (LED Chip), and more particularly to a backlight module using the light emitting diode chip (Backlighting Module) and its Production method. [Prior art] A light emitting diode element is a fine solid state light source that can convert electrical energy into light energy. Yunyu light-emitting diode elements are not only small in size, but also have low driving voltage, fast response rate, shock resistance, long life and other characteristics, and can also meet the needs of various applications equipment light, thin, short, small, so it has become Electronic products that are quite popular in daily life. In the traditional light-emitting diode device, due to the influence of the package structure, most of the light output is concentrated in the axial light, so the light output intensity with a large angle with the axial direction has a large difference with respect to the axial light output. In this way, when the light-emitting diode element is applied to a backlight module, an additional light guide plate is required to increase the lateral light-emitting property, thereby increasing the difficulty of design and production, and therefore the thickness of the backlight module is increased. This has the disadvantage of insufficient illumination. For example, please refer to FIG. 1. FIG. 丨 is a schematic diagram showing the packaging structure of a conventional light emitting diode. The light emitting diode element 〇〇〇 is mainly covered by the light emitting diode die 102 and the packaging film 104 on the light emitting diode die 〇2. The light emitted by the light emitting diode chip 102 directly penetrates the packaging film 104 and emits the light emitting diode element! 〇〇. Please refer to Fig. 2. Fig. 2 is a graph showing the relationship between the light output intensity and the angle of the light-emitting diode element of Fig. 1235551. The horizontal axis represents the brightness, ^ 102 ^ ^ ^ v. . Since most of the light-emitting diode crystal 102 loses light, 屏 古 屏 iscreen & 1 is first in the axial direction, so the axial position
光冗度為最強。因此，甚I 要均勻光浐屮夕北 將毛先二極體元件100應用在需 要勺勾先輸出之为光模組時 丁时θ屋生配色不均勻的問題。 ，傳統個別封裝之紅、綠、 在背光模組時，不僅合佔用_ ㈣曰曰月應用 均勻的缺點。Η肖過大之體積，更會產生光輸出不 Μ止私上述又到傳統紅、綠、藍發光二極體晶片之封裝 的光輸出過度章中方击占A M Ρ # 一 車向的衫響，致使發光二極體晶片無法 有效地應用在背光模組上。而且，若加導光板以增加側向發 光f質又曰乓加月光模組之厚度，並產生照度不足之缺點。 【發明内容】 因此，本發明之目的就是在提供一種發光二極體背光模 、、且’、有複數個發光一極體晶片，且每一個I光二極體晶片 具有一色發光一極體晶粒。如此一來，可透過個別之電壓或 電流控制，使發光二極體背光模組呈現多彩與白光，更可調 整色溫。 本發明之另一目的是在提供一種發光二極體背光模 組至少包括多個發光二極體晶片，且每一個發光二極體晶 片上之發光二極體晶粒封裝在金屬板上。因此，可大幅提升 發光二極體晶片之散熱性與導電性。 本發明之又一目的是在提供一種發光二極體背光模組 之製造方法，係將多顆單一發光二極體晶片貼合到散熱度佳 1238551 之印刷電路板上，再透過串聯或並聯連接，可製作出具有大 面積面板之背光源模組。 /' · 本發明之再一目的就是在提供一種發光二極體背光模 組之製造方法’可在印刷電路板下面沈積或塗佈金屬板，以 提供背光模組之散熱’並可提高元件之操作電流。因此，可 增加亮度可調整的範圍。 根據本發明之上述目的，提出一種發光二極體背光模 組，至；包括·一印刷電路板，其中印刷電路板之一表面上 包括複數個導線，且印刷電路板至少包括複數個凹槽；複數 個發光二極體晶片分別位於上述凹槽中，其中每一個發光二 極體曰曰片至 >'包括· 一金屬基板；一紅色發光二極體晶粒、 一綠色發光二極體晶粒、以及一藍色發光二極體晶粒分別位 於金屬基板之表面上；至少一絕緣層位於金屬基板之外緣 上；複數個電極分別位於前述絕緣層之外緣上，其中紅色發 光二極體晶粒、綠色發光二極體晶粒以及藍色發光二極體晶 粒之一極分別與前述電極電性連接；以及一透明封裝薄膜位 於金屬基板之表面，並覆蓋紅色發光二極體晶粒、綠色發光 一極體晶粒以及藍色發光二極體晶粒；以及複數個銲接薄膜 電性接合印刷電路板之導線與每一個發光二極體晶片之電 極0 依照本發明一較佳實施例，可在印刷電路板下表面形成 金屬板，而透過大面積之金屬板提供散熱功能。 根據本發明之目的，另外更提出一種發光二極體背光模 組之製造方法，至少包括··提供一印刷電路板，其中此印刷 1238551 電路板之一表面上包括複數個導線，且印刷電路板中形成有 複數個凹槽；提供複數個發光二極體晶片並置入上述凹槽 中’其中每一個發光二極體晶片至少包括：一基板；三個發 光二極體晶粒位於基板之-表面上；以及複數個電極分㈣ 於基板之外緣上’其中發光二極體晶粒之二極分別與上述之 電極電性連接；以及提供複數個銲接薄膜，以電性接合印刷 電路板之導線與每一個發光二極體晶片之電極。 依照本發明一較佳實施例，每一個導線具有突出部分別 延伸於每一個凹槽之外緣上，因此當具有紅、綠、藍三色之 單一發光二極體晶片嵌到凹槽時，僅要稍微局部加熱，即可 成功貼合在印刷電路板上。故，可降低對準所產生的不良率。 藉由將三色發光二極體晶粒封裝在散熱良好之金屬基 板上，再透過銲料黏貼到印刷電路板上，可有效提升發光二 極體背光模組之散熱效能。將多顆單一發光二極體晶片，透 過貼合到散熱度佳之印刷電路板，更透過串連或並聯連接， 可製作出提供大面積面板之背光源模組。 【實施方式】 本發明揭露一種發光二極體背光模組及其製造方法，係 將三色晶粒封裝在單一金屬板上，再透過銲料黏貼到印刷電 路板上。利用印刷電路板上面之導線提供發光二極體晶片之 間的串聯/並聯，而形成具有電源接連之獨立背光模組。為 了使本發日月之敘述更加詳盡與完備，可參照τ列描述並配合 第3圖至第10圖之圖示。 1238551 ^請同時參照第3圖與第4圖，其中第3圖係繪示依照本 1明較佳實施例的一種發光二極體晶片之上視圖，而第* 圖則係繪示依照本發明一較佳實施例的一種發光二極體晶 片之側視圖。製作發光二極體晶片200時，先提供基板2〇2, 再形成至少一個絕緣層204位於基板202之外緣上，且較佳 於絕緣層204之外緣上分別形成電極212、電極214、電極 216、電極218、電極220、以及電極222，並在未受到絕緣 層204覆蓋之基板202的中央區域上分別黏附紅色發光二極 體晶粒206、藍色發光二極體晶粒2〇8以及綠色發光二極體 晶粒210。基板202具有導熱與導電性，且基板2〇2之材質 較佳為金屬，例如鋁、銅或上述材料之合金。絕緣層2〇4 可為一連續結構，亦可為多個不連續結構。絕緣層2〇4位於 基板202與各個電極之間，以絕緣電極與基板2〇2之間的導 電路徑。而，電極212、電極214、電極216、電極218、電 極220、以及電極222較佳是位於基板2〇2邊緣上，且電極 212、電極214、電極216、電極218、電極220、以及電極 222之材質可例如為銅。其中，利用例如導線銲接 Bonding)技術，分別以連接線224來電性連接電極212及電 極214與紅色發光二極體晶粒206之正極及負極、電極216 及電極218與藍色發光二極體晶粒208之正極及負極、以及 電極220及電極222與綠色發光二極體晶粒21〇之正極及負 極，如第1圖所示。連接線224之材質較佳為金或鋁。待完 成連接線224之製作後’利用透明之封裝薄膜覆蓋在基 板202上之紅色發光二極體晶粒206、藍色發光二極體晶粒 1238551 208以及綠色發光二極體晶粒21〇上，而完成發光二極體晶 片200之封裝，如第4圖所示。封裝薄膜226之材質可例如 為樹脂。 在本發明中，可藉由透明封裝材料介質與曲面之最佳化 - 設計，使發光二極體晶片200具有大角度之光輸出特性。在 ' -較佳實施例中’發光二極體晶片200之光輸出相對強度與 角度關係經量測後，結果如第5圖所示。由第5圖可明顯看 出發光二極體晶片2GG在其張角範圍内具有均句之光輸出。 本發明之一特徵為將三色發光二極體晶粒設置在同一鲁 導熱與導電性佳之基板上，而可提供發光：極體晶粒良好之 散熱性與導電性。且’可透過個別之電壓或電流控制，可使 發光二極體晶片呈現多彩與白光，更可有效調整色溫。如 此：可改善傳統個別封裝之紅、綠、藍發光二極體晶片應用 在背光模組時，所造成之佔用過大的體積、以及光輸出較不 均勻等缺點。 接下來，提供印刷電路板302,此印刷電路板3〇2上設 2多個凹槽3〇4,其中這些凹槽遍之尺寸較佳是約等於 極體晶# 200之尺寸’如第6圖所示。印刷電路板 正搞Ζ端更可分別設置數個R、G、B發光二極體晶粒之 ^負極接觸墊。印刷電路板3G2上之—表面上更設置有 ^導線_3〇6’且這些導線遍延伸至凹槽3〇4之週邊，如 圖所不。導線鳩之材質較佳可例如為銅。其中，第7 得之：：::刷電路板3〇2係沿著第6圖之A-A，剖面線所獲 侍之剖面結構。 又 10 1238551 製作發光二極體被光模組時，係將多個發光二極體晶片 200分別嵌入印刷電路板302之凹槽304中，如第7圖所示。 當發光二極體晶片200置於印刷電路板3〇2之凹槽3〇4中 時’發光二極體晶片200之電極212、電極214、電極216、 電極218、電極220、以及電極222較佳係鄰近導線3〇6， 且更佳是與導線306實質位於同一平面，如第8圖所示。待 發光二極體晶片200欲入凹槽304後，將銲接薄膜228設置 在發光二極體晶片200之電極212、電極214、電極216、 電極218、電極220、以及電極222與印刷電路板3〇2上之 導線306上，以將發光二極體晶片2〇〇銲接在印刷電路板 302中，並使發光二極體晶片2〇〇之電極212、電極214、 電極216、電極218、電極220、以及電極222與導線3〇6 電性連接。銲接薄膜228之材質較佳可為銅锡合金（SnCu)。 本發明之另一特徵就是可利用印刷電路板上之導線來 提供發光二極體晶片之間的串聯/並聯，而形成具有電源接 連之獨立背光模組。 睛參照第9圖，第9圖係繪示依照本發明另一較佳實施 例的一種發光二極體背光模組之組裝剖面圖。在此較佳實施 例中，印刷電路板302上之每一條導線3〇6更具有突出部 308,這些突出部308延伸於凹槽3〇4之外緣上。將發光二 極體晶片200置入印刷電路板3〇2之凹槽3〇4時，可先在發 光一極體晶片200之電極212、電極214、電極216、電極 218、電極220、以及電極222上分別設置銲接薄膜228。接 著，將發光二極體晶片200嵌入凹槽3〇4,並使銲接薄膜228 1238551 位於導線306之突出部308與發光二極體晶片2〇〇之各個電 極之間。經局部加熱後，銲接薄膜228可將發光二極體晶片 200上之各電極與印刷電路板3〇2之導線3〇6予以電性接 合，而使發光二極體晶片200順利地貼合在印刷電路板3〇2 上。其中，印刷電路板302之導線306與發光二極體晶片 · 200之各電極呈堆疊接合。 由於印刷電路板302上之導線306具有相對應之突出部 308，因此當具有紅、綠、藍三色之單一發光二極體晶片2〇〇 嵌到凹槽304時，可輕易使發光二極體晶片2〇〇之各電極與籲 印刷電路板302有效貼合。故，可降低發光二極體晶片2〇〇 置入凹槽304時因對準所產生之不良率。 凊參照第10圖，第1 〇圖係繪示依照本發明又一較佳實 施例的一種發光二極體背光模組之組裝剖面圖。在此實施例 中更可先在相對於導線306所在之表面的印刷電路板3〇2 之责面上形成散熱板3 1 〇，其中散熱板3丨〇延伸於印刷電路 板302之凹槽304上，且散熱板31〇較佳是遮蓋在印刷電路 板302之整個为面上。散熱板3〖〇之材質較佳為金屬，例如參 銅、鋁、金、錫等金屬或上述金屬之合金。然後，將發光二 極體晶片200置入凹槽3〇4中之散熱板31〇上，其中發光二 極體晶片200之基板202貼合在散熱板31〇上，且發光二極 〜 體晶片200上之各電極較佳是與印刷電路板3〇2上之導線 · 306貫質上共平面。藉由印刷電路板3〇2背面上之散熱板 31〇,可提供發光二極體晶片2〇〇背部散熱，以及發光二極 體與印刷電路板302之銲接。 12 1238551 人本t月之另一特徵就是將多顆單一發光二極體晶片貼 合至散熱度佳之印刷電路板，透過串連或並聯連接，可以製 作提供大面積面板之背光源模組。 ^上述本發明較佳實施例可知，本發明之一優點就是因 · 為I光“極、體月光模組之每一個發光二極體晶片同時具有 一色發光一極體晶粒。因此，可透過個別之電壓或電流控 制使發光一極體背光模組呈現多彩與白光，更可藉此調整 色溫。 由上述本發明較佳實施例可知，本發明之另一優點就是 _ 因為發光一極體为光模組之每一個發光二極體晶片上之發 光二極體晶粒係封裝在金屬板上。因此，可達到大幅提升發 光二極體晶片之散熱性與導電性的目的。 由上述本發明較佳實施例可知，本發明之又一優點就是 因為製作發光二極體背光模組時，係將多顆單—發光二極體 晶片貼合到散熱度佳之印刷電路板上。因此，可利用串聯或 並聯連接，而製作出具有大面積面板之背光源模組。 由上述本發明較佳實施例可知，本發明之再一優點就是春 因為製作發光二極體背光模㈣，可在印刷電路板背面沈積 或塗佈散熱板。因此，可提供背光模組之散熱，而可提高元 件之插作電流’進而達到增加亮度可調整之範圍的目的。 雖然本發明已以一較佳實施例揭露如上，然其並非用以 · 限定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與潤飾，因此本發明之保護範圍口 當視後附之申請專利範圍所界定者為準。 13 1238551 【圖式簡單說明】 第i圖係繪示習知發光二極體之料結構示意圖。 第2圖係繪示第1圖之發光二極體元件的光輸出強度與 角度的關係圖。 第3圖係繪示依照本發明一較佳實施例的一種發光二 極體晶片之上視圖。 第4圖係繪示依照本發明一較佳實施例的一種發光二 極體晶片之側視圖。 第5圖係繪示依照本發明一較佳實施例的一種發光二 極體晶粒的光輸出強度與角度的關係圖。 第6圖係繪示依照本發明一較佳實施例的一種印刷電 路板之上視圖。 第7圖至第8圖係繪示依照本發明一較佳實施例的一種 發光二極體背光模組之製程剖面圖。 第9圖係繪示依照本發明另一較佳實施例的一種發光 二極體背光模組之組裝剖面圖。 籲 第1〇圖係繪示依照本發明又—較佳實施例的-種發光 一極體背光模組之組裝剖面圖。 主要元件符號說明】 100 :發光二極體元件 104:封裝薄膜 202 :基板 102 :發光二極體晶粒 200 :發光二極體晶片 204 :絕緣層 14 1238551 206 ： 紅色發光二極體晶粒 208 ： 藍色發光二極體晶粒 210 ： 綠色發光二極體晶粒 212 ： 電極 214 ： 電極 216 ： 電極 218 ·· 電極 220 ： 電極 222 ： 電極 224 ： 連接線 226 ： 封裝薄膜 228 ： 銲接薄膜 302 ： 印刷電路板 304 ： 凹槽 306 ： 導線 308 ： 突出部 310 ： 散熱板 15Light redundancy is the strongest. Therefore, it is necessary to uniformly illuminate the north. The application of the Mao Xiandiode element 100 to the light module that needs to be output first is the problem of uneven color matching. The traditional individual package of red and green, in the backlight module, not only combined occupation _ ㈣ 曰 应用 month and month application uniform shortcomings. If the volume is too large, the light output will not be generated. The light output to the package of the traditional red, green, and blue light-emitting diode chips will be excessive. The Chinese side will hit AM Ρ # the direction of the car, causing The light-emitting diode chip cannot be effectively applied to the backlight module. Moreover, if a light guide plate is added to increase the lateral light quality, the thickness of the pong plus moonlight module is also caused, and the disadvantage of insufficient illumination is caused. [Summary of the Invention] Therefore, the object of the present invention is to provide a light-emitting diode backlight mode, and there are a plurality of light-emitting diode wafers, and each I-light diode wafer has a color light-emitting diode chip. . In this way, the LED backlight module can be displayed with colorful and white light through individual voltage or current control, and the color temperature can be adjusted. Another object of the present invention is to provide a light-emitting diode backlight module including at least a plurality of light-emitting diode wafers, and the light-emitting diode dies on each light-emitting diode wafer are packaged on a metal plate. Therefore, the heat dissipation and conductivity of the light emitting diode chip can be greatly improved. Yet another object of the present invention is to provide a method for manufacturing a light-emitting diode backlight module, which comprises bonding a plurality of single light-emitting diode chips to a printed circuit board with high heat dissipation of 1238551, and then connecting them in series or in parallel. , Can produce a backlight module with a large area panel. / 'Another object of the present invention is to provide a method for manufacturing a light-emitting diode backlight module, which can' deposit or coat a metal plate under a printed circuit board to provide heat dissipation of the backlight module 'and improve the components. Operating current. Therefore, the range in which the brightness can be adjusted can be increased. According to the above object of the present invention, a light-emitting diode backlight module is provided, including: a printed circuit board, wherein one surface of the printed circuit board includes a plurality of wires, and the printed circuit board includes at least a plurality of grooves; A plurality of light-emitting diode wafers are respectively located in the above-mentioned grooves, and each of them includes a metal substrate; a red light-emitting diode crystal grain, and a green light-emitting diode crystal. Grains and a blue light emitting diode grain are respectively located on the surface of the metal substrate; at least one insulating layer is located on the outer edge of the metal substrate; a plurality of electrodes are respectively located on the outer edge of the foregoing insulating layer, wherein the red light emitting diode is One of the body crystal, the green light-emitting diode crystal, and the blue light-emitting diode crystal is electrically connected to the electrode; and a transparent packaging film is located on the surface of the metal substrate and covers the red light-emitting diode crystal. Grains, green light-emitting diode grains and blue light-emitting diode grains; and a plurality of solder films are electrically connected to the wires of the printed circuit board and each light-emitting diode. Wafer pole electrode according to the present invention, a preferred 0 embodiment, the metal plate may be formed at the surface of the printed circuit board, heat dissipation function is provided via a large area of the metal plate. According to the purpose of the present invention, a method for manufacturing a light-emitting diode backlight module is further provided, which at least includes providing a printed circuit board, wherein one surface of the printed 1238551 circuit board includes a plurality of wires, and the printed circuit board A plurality of grooves are formed in the groove; a plurality of light-emitting diode wafers are provided and placed in the grooves above. Each of the light-emitting diode wafers includes at least: a substrate; three light-emitting diode crystals are located on the substrate- On the surface; and a plurality of electrodes are divided on the outer edge of the substrate, wherein the two poles of the light-emitting diode grains are electrically connected to the above electrodes, respectively; and a plurality of solder films are provided to electrically bond the printed circuit board. Leads and electrodes of each light emitting diode wafer. According to a preferred embodiment of the present invention, each wire has a protruding portion extending on the outer edge of each groove, so when a single light-emitting diode chip having three colors of red, green, and blue is embedded in the groove, Only a little local heating is required to successfully attach to a printed circuit board. Therefore, the defective rate caused by the alignment can be reduced. By encapsulating the three-color light-emitting diode die on a metal substrate with good heat dissipation, and then sticking it to the printed circuit board through solder, the heat dissipation performance of the light-emitting diode backlight module can be effectively improved. A plurality of single light-emitting diode chips are bonded to a printed circuit board with good heat dissipation, and connected in series or in parallel to produce a backlight module that provides a large-area panel. [Embodiment] The present invention discloses a light-emitting diode backlight module and a manufacturing method thereof. The three-color die is packaged on a single metal plate, and then pasted to a printed circuit board by solder. The wires on the printed circuit board are used to provide series / parallel connection between the light-emitting diode wafers to form an independent backlight module with a power supply connection. In order to make the description of the sun and the moon more detailed and complete, you can refer to the τ column and cooperate with the diagrams in Figures 3 to 10. 1238551 ^ Please refer to FIG. 3 and FIG. 4 at the same time, wherein FIG. 3 is a top view of a light emitting diode wafer according to the preferred embodiment of the present invention, and FIG. * Is a view according to the present invention A side view of a light emitting diode wafer in a preferred embodiment. When manufacturing the light-emitting diode wafer 200, a substrate 202 is provided first, and then at least one insulating layer 204 is formed on the outer edge of the substrate 202, and it is preferable to form electrodes 212, 214, and 212 on the outer edges of the insulating layer 204, respectively. The electrode 216, the electrode 218, the electrode 220, and the electrode 222, and the red light-emitting diode grains 206 and the blue light-emitting diode grains 208 are adhered to the central region of the substrate 202 not covered by the insulating layer 204, respectively. And green light emitting diode grain 210. The substrate 202 has thermal and electrical conductivity, and the material of the substrate 202 is preferably a metal, such as aluminum, copper, or an alloy of the foregoing materials. The insulating layer 204 may be a continuous structure or a plurality of discontinuous structures. The insulating layer 204 is located between the substrate 202 and each electrode, so as to insulate a conductive path between the electrode and the substrate 202. The electrodes 212, 214, 216, 218, 220, and 222 are preferably located on the edge of the substrate 202, and the electrodes 212, 214, 216, 218, 220, and 222 The material may be, for example, copper. Among them, using, for example, wire bonding technology, the electrodes 212 and 214 are electrically connected to the positive and negative electrodes of the red light-emitting diode crystal grains 206, the electrodes 216 and 218, and the blue light-emitting diode crystals by connection wires 224, respectively. The positive and negative electrodes of the grains 208 and the positive and negative electrodes of the electrodes 220 and 222 and the green light-emitting diode grains 21 are shown in FIG. 1. The material of the connecting wire 224 is preferably gold or aluminum. After the production of the connection line 224 is completed, the red light-emitting diode die 206, the blue light-emitting diode die 1238551 208, and the green light-emitting diode die 21 on the substrate 202 are covered with a transparent packaging film. The package of the light-emitting diode chip 200 is completed, as shown in FIG. 4. The material of the packaging film 226 may be, for example, a resin. In the present invention, the light-emitting diode chip 200 can have a large-angle light output characteristic by optimizing and designing the transparent packaging material medium and the curved surface. In the '-preferred embodiment', the relationship between the relative intensity of light output and the angle of the light-emitting diode wafer 200 is measured, and the result is shown in FIG. 5. It can be clearly seen from Fig. 5 that the light-emitting diode wafer 2GG has a uniform light output in the range of its opening angle. One feature of the present invention is that the three-color light-emitting diode crystal grains are arranged on the same substrate with good thermal conductivity and electrical conductivity, and can provide light emission: the good heat dissipation and electrical conductivity of the crystal grains of the polar crystal. And it can be controlled by individual voltage or current, which can make the light-emitting diode chip show colorful and white light, and it can adjust the color temperature more effectively. This way: it can improve the traditional individual package of red, green, and blue light-emitting diode chips used in backlight modules, resulting in excessive occupation of the volume, and the uneven light output and other shortcomings. Next, a printed circuit board 302 is provided. The printed circuit board 30 is provided with a plurality of grooves 304. The size of these grooves is preferably approximately equal to the size of the polar body crystal # 200. As shown. The printed circuit board can be provided with a plurality of R, G, and B light-emitting diode grains respectively at the Z end. On the surface of the printed circuit board 3G2, ^ conducting wires_3〇6 ′ are further provided on the surface, and these wires extend to the periphery of the groove 304, as shown in the figure. The material of the lead dove is preferably copper, for example. Among them, the seventh obtained: ::: the brush circuit board 30 is a cross-sectional structure obtained along the A-A, cross-section line of FIG. 6. 10 1238551 When manufacturing a light-emitting diode envelope module, a plurality of light-emitting diode wafers 200 are respectively embedded in the grooves 304 of the printed circuit board 302, as shown in FIG. 7. When the light-emitting diode wafer 200 is placed in the groove 300 of the printed circuit board 300, the electrode 212, the electrode 214, the electrode 216, the electrode 218, the electrode 220, and the electrode 222 of the light-emitting diode wafer 200 are compared with each other. Jia is adjacent to the conductive wire 306, and more preferably is located substantially on the same plane as the conductive wire 306, as shown in FIG. After the light-emitting diode wafer 200 wants to enter the groove 304, the solder film 228 is disposed on the electrode 212, the electrode 214, the electrode 216, the electrode 218, the electrode 220, and the electrode 222 of the light-emitting diode wafer 200 and the printed circuit board 3. The light emitting diode wafer 2000 is soldered to the printed circuit board 302 on the lead 306 on the 002, and the electrode 212, the electrode 214, the electrode 216, the electrode 218, and the electrode of the light emitting diode wafer 2000 are soldered. 220 and the electrode 222 are electrically connected to the lead 306. The material of the solder film 228 may be copper-tin alloy (SnCu). Another feature of the present invention is that the wires on the printed circuit board can be used to provide series / parallel connection between the light-emitting diode wafers to form an independent backlight module with a power supply connection. Referring to FIG. 9, FIG. 9 is a cross-sectional view of an assembled light-emitting diode backlight module according to another preferred embodiment of the present invention. In this preferred embodiment, each of the conductive wires 306 on the printed circuit board 302 further has protrusions 308 that extend beyond the outer edges of the grooves 304. When the light-emitting diode wafer 200 is placed in the groove 304 of the printed circuit board 300, the electrode 212, the electrode 214, the electrode 216, the electrode 218, the electrode 220, and the electrode of the light-emitting diode wafer 200 may be first A solder film 228 is provided on each of 222. Next, the light-emitting diode wafer 200 is inserted into the groove 304, and the solder film 228 1238551 is positioned between the protruding portion 308 of the lead 306 and each electrode of the light-emitting diode wafer 2000. After the local heating, the solder film 228 can electrically bond the electrodes on the light-emitting diode wafer 200 and the wires 30 of the printed circuit board 300 to the light-emitting diode wafer 200 smoothly. Printed circuit board 302. Among them, the lead 306 of the printed circuit board 302 and the electrodes of the light-emitting diode wafer 200 are stacked and joined. Since the conductive wires 306 on the printed circuit board 302 have corresponding protrusions 308, when a single light emitting diode wafer 200 having three colors of red, green, and blue is embedded in the groove 304, the light emitting diode can be easily made. Each electrode of the body wafer 2000 is effectively attached to the printed circuit board 302. Therefore, the defective rate caused by the alignment when the light-emitting diode wafer 2000 is placed in the groove 304 can be reduced. (10) Referring to FIG. 10, FIG. 10 is a cross-sectional view illustrating an assembly of a light-emitting diode backlight module according to another preferred embodiment of the present invention. In this embodiment, a heat dissipation plate 3 1 0 may be formed on the surface of the printed circuit board 30 2 opposite to the surface where the wire 306 is located, wherein the heat dissipation plate 3 extends from the groove 304 of the printed circuit board 302. The heat dissipation plate 31 is preferably covered on the entire surface of the printed circuit board 302. The material of the heat dissipation plate 3 is preferably a metal, such as a metal such as copper, aluminum, gold, tin, or an alloy of the above metals. Then, the light-emitting diode wafer 200 is placed on the heat-dissipating plate 31o in the groove 304, wherein the substrate 202 of the light-emitting diode-wafer 200 is attached to the heat-dissipating plate 31o, and the light-emitting diode ~ body wafer The electrodes on 200 are preferably coplanar with the wires on the printed circuit board 302 and 306 through. The heat dissipation plate 31 on the back of the printed circuit board 302 can provide heat dissipation on the back of the light emitting diode wafer 200 and soldering of the light emitting diode to the printed circuit board 302. 12 1238551 Another feature of this month is that multiple single light-emitting diode chips are bonded to a printed circuit board with good heat dissipation. Through serial or parallel connection, a backlight module that provides a large area panel can be manufactured. ^ As can be seen from the above-mentioned preferred embodiments of the present invention, one advantage of the present invention is that each light-emitting diode wafer that is an I-light "pole and body moonlight module has a single-color light-emitting polar crystal grain at the same time. Therefore, it is transparent Individual voltage or current control makes the light-emitting diode backlight module display colorful and white light, and the color temperature can be adjusted by this. According to the above-mentioned preferred embodiments of the present invention, another advantage of the present invention is that because the light-emitting diode is The light-emitting diode chips on each light-emitting diode chip of the light module are packaged on a metal plate. Therefore, the purpose of greatly improving the heat dissipation and electrical conductivity of the light-emitting diode chip can be achieved. It can be seen from the preferred embodiments that another advantage of the present invention is that when manufacturing a light-emitting diode backlight module, a plurality of single-light-emitting diode chips are bonded to a printed circuit board with good heat dissipation. Therefore, it can be used. It can be connected in series or in parallel to produce a backlight module with a large area panel. As can be seen from the above-mentioned preferred embodiments of the present invention, another advantage of the present invention is that the light emitting diodes are fabricated The backlight module can be used to deposit or coat a heat sink on the back of the printed circuit board. Therefore, the backlight module can be provided with heat dissipation, and the insertion current of the components can be increased, thereby increasing the range of adjustable brightness. Although the present invention It has been disclosed above with a preferred embodiment, but it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application. 13 1238551 [Simplified illustration of the figure] Figure i is a schematic diagram showing the structure of a conventional light emitting diode. Figure 2 is the first Fig. 3 is a diagram showing the relationship between the light output intensity and the angle of a light emitting diode element. Fig. 3 is a top view of a light emitting diode wafer according to a preferred embodiment of the present invention. A side view of a light-emitting diode wafer according to a preferred embodiment of the present invention. FIG. 5 is a diagram showing the relationship between the light output intensity and the angle of a light-emitting diode crystal according to a preferred embodiment of the present invention. FIG. 6 is a top view of a printed circuit board according to a preferred embodiment of the present invention. FIGS. 7 to 8 are a light-emitting diode backlight module according to a preferred embodiment of the present invention. Sectional view of the manufacturing process. FIG. 9 is a sectional view showing the assembly of a light-emitting diode backlight module according to another preferred embodiment of the present invention. FIG. Example: Assembly cross-section view of a kind of light-emitting monolithic backlight module. Explanation of main component symbols] 100: light-emitting diode element 104: packaging film 202: substrate 102: light-emitting diode die 200: light-emitting diode wafer 204: Insulating layer 14 1238551 206: Red light-emitting diode crystal grains 208: Blue light-emitting diode crystal grains 210: Green light-emitting diode crystal grains 212: Electrode 214: Electrode 216: Electrode 218 ·· Electrode 220: Electrode 222: electrode 224: connection line 226: packaging film 228: solder film 302: printed circuit board 304: recess 306: lead 308: protrusion 310: heat sink 15